CN103502318A - 无机聚硅氮烷、含有它的二氧化硅膜形成用涂布液以及二氧化硅膜的形成方法 - Google Patents

无机聚硅氮烷、含有它的二氧化硅膜形成用涂布液以及二氧化硅膜的形成方法 Download PDF

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Publication number
CN103502318A
CN103502318A CN201280020940.6A CN201280020940A CN103502318A CN 103502318 A CN103502318 A CN 103502318A CN 201280020940 A CN201280020940 A CN 201280020940A CN 103502318 A CN103502318 A CN 103502318A
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Prior art keywords
inorganic polysilazane
silicon dioxide
polysilazane
ppm
dioxide film
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Pending
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CN201280020940.6A
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Chinese (zh)
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森田博
小林纯
横田洋大
降幡泰久
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Adeka Corp
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Asahi Denka Kogyo KK
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/082—Compounds containing nitrogen and non-metals and optionally metals
    • C01B21/087—Compounds containing nitrogen and non-metals and optionally metals containing one or more hydrogen atoms
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/126—Preparation of silica of undetermined type
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/60—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which all the silicon atoms are connected by linkages other than oxygen atoms
    • C08G77/62—Nitrogen atoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/16—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D1/00—Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/16—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Paints Or Removers (AREA)
  • Silicon Polymers (AREA)
  • Formation Of Insulating Films (AREA)
  • Silicon Compounds (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
CN201280020940.6A 2011-06-13 2012-04-09 无机聚硅氮烷、含有它的二氧化硅膜形成用涂布液以及二氧化硅膜的形成方法 Pending CN103502318A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011-131146 2011-06-13
JP2011131146A JP2013001721A (ja) 2011-06-13 2011-06-13 無機ポリシラザン、これを含有してなるシリカ膜形成用塗布液及びシリカ膜の形成方法
PCT/JP2012/059655 WO2012172860A1 (ja) 2011-06-13 2012-04-09 無機ポリシラザン、これを含有してなるシリカ膜形成用塗布液及びシリカ膜の形成方法

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CN103502318A true CN103502318A (zh) 2014-01-08

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CN201280020940.6A Pending CN103502318A (zh) 2011-06-13 2012-04-09 无机聚硅氮烷、含有它的二氧化硅膜形成用涂布液以及二氧化硅膜的形成方法

Country Status (6)

Country Link
US (1) US20140106576A1 (https=)
JP (1) JP2013001721A (https=)
KR (1) KR20140024342A (https=)
CN (1) CN103502318A (https=)
TW (1) TW201249740A (https=)
WO (1) WO2012172860A1 (https=)

Cited By (3)

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CN107129757A (zh) * 2016-02-26 2017-09-05 三星Sdi株式会社 用于形成二氧化硅层的组成物、二氧化硅层及其制造方法以及包含二氧化硅层的电子装置
CN109957261A (zh) * 2017-12-14 2019-07-02 三星Sdi株式会社 用于形成二氧化硅层的组合物、二氧化硅层以及电子装置
CN111944320A (zh) * 2019-05-17 2020-11-17 三星Sdi株式会社 用于形成二氧化硅层的组成物、二氧化硅层及电子装置

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JP5692736B2 (ja) * 2009-10-05 2015-04-01 株式会社Adeka 絶縁膜形成用塗布液、それを用いた絶縁膜
CN103910885A (zh) * 2012-12-31 2014-07-09 第一毛织株式会社 制备间隙填充剂的方法、用其制备的间隙填充剂和使用间隙填充剂制造半导体电容器的方法
JP6134576B2 (ja) * 2013-04-30 2017-05-24 サムスン エスディアイ カンパニー，リミテッドＳａｍｓｕｎｇ Ｓｄｉ Ｃｏ．，Ｌｔｄ． 改質シリカ膜の製造方法、塗工液、及び改質シリカ膜
JP6104785B2 (ja) * 2013-12-09 2017-03-29 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ ペルヒドロポリシラザン、およびそれを含む組成物、ならびにそれを用いたシリカ質膜の形成方法
CN105939959A (zh) * 2014-02-07 2016-09-14 柯尼卡美能达株式会社 改性聚硅氮烷、含有该改性聚硅氮烷的涂布液及使用该涂布液而制造的气体阻隔性膜
KR101497500B1 (ko) * 2014-06-16 2015-03-03 한국과학기술연구원 파장변환층을 구비하는 태양전지 및 그의 제조 방법
US10020185B2 (en) 2014-10-07 2018-07-10 Samsung Sdi Co., Ltd. Composition for forming silica layer, silica layer, and electronic device
KR101837971B1 (ko) 2014-12-19 2018-03-13 삼성에스디아이 주식회사 실리카계 막 형성용　조성물, 실리카계 막, 및 전자 디바이스
KR101833800B1 (ko) 2014-12-19 2018-03-02 삼성에스디아이 주식회사 실리카계 막 형성용 조성물, 실리카계 막의 제조방법 및 상기 실리카계 막을 포함하는 전자 소자
KR20160134290A (ko) 2015-05-15 2016-11-23 삼성에스디아이 주식회사 실리카 막 형성용 조성물, 실리카 막의 제조방법 및 실리카 막
KR20170014946A (ko) * 2015-07-31 2017-02-08 삼성에스디아이 주식회사 실리카 막 형성용 조성물, 실리카 막의 제조방법 및 실리카 막
US10316216B2 (en) 2016-08-31 2019-06-11 Samsung Sdi Co., Ltd. Composition for forming silica layer, and silica layer
JP2018083736A (ja) * 2016-11-24 2018-05-31 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ シロキサザン化合物、およびそれを含む組成物、ならびにそれを用いたシリカ質膜の形成方法
KR102015404B1 (ko) 2016-12-08 2019-08-28 삼성에스디아이 주식회사 실리카 막 형성용 조성물, 실리카 막의 제조방법 및 실리카 막을 포함하는 전자소자
JP7033667B2 (ja) * 2018-02-21 2022-03-10 レール・リキード－ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード ペルヒドロポリシラザン組成物及びそれを使用する酸化物膜の形成方法
TWI793262B (zh) * 2018-02-21 2023-02-21 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 全氫聚矽氮烷組成物和用於使用其形成氮化物膜之方法
KR102446983B1 (ko) * 2018-04-27 2022-09-22 삼성에스디아이 주식회사 실리카 막 형성용 조성물 및 실리카 막
KR102395487B1 (ko) * 2019-08-21 2022-05-06 삼성에스디아이 주식회사 실리카 막 형성용 조성물 및 실리카 막
JP2022036556A (ja) * 2020-08-24 2022-03-08 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング ポリシラザン、およびそれを含むシリカ質膜形成組成物、ならびにそれを用いたシリカ質膜の製造方法
KR102822386B1 (ko) * 2022-07-05 2025-06-17 삼성에스디아이 주식회사 실리카 막 형성용 조성물, 그로부터 형성된 실리카 막, 및 상기 실리카 막을 포함하는 전자 소자
KR102930141B1 (ko) 2023-04-24 2026-02-25 한국광기술원 내전압성이 개선된 절연막 조성물 및 그를 이용한 절연금속기판의 제조 방법

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107129757A (zh) * 2016-02-26 2017-09-05 三星Sdi株式会社 用于形成二氧化硅层的组成物、二氧化硅层及其制造方法以及包含二氧化硅层的电子装置
CN107129757B (zh) * 2016-02-26 2020-02-07 三星Sdi株式会社 用于形成二氧化硅层的组成物、二氧化硅层及其制造方法以及包含二氧化硅层的电子装置
CN109957261A (zh) * 2017-12-14 2019-07-02 三星Sdi株式会社 用于形成二氧化硅层的组合物、二氧化硅层以及电子装置
US10804095B2 (en) 2017-12-14 2020-10-13 Samsung Sdi Co., Ltd. Composition for forming silica layer, silica layer, and electronic device
TWI713925B (zh) * 2017-12-14 2020-12-21 南韓商三星Ｓｄｉ股份有限公司 用於形成二氧化矽層的組合物、二氧化矽層以及電子裝置
CN109957261B (zh) * 2017-12-14 2021-07-09 三星Sdi株式会社 用于形成二氧化硅层的组合物、二氧化硅层以及电子装置
CN111944320A (zh) * 2019-05-17 2020-11-17 三星Sdi株式会社 用于形成二氧化硅层的组成物、二氧化硅层及电子装置
US11201052B2 (en) 2019-05-17 2021-12-14 Samsung Sdi Co., Ltd. Composition for forming silica layer, silica layer and electronic device incorporating silica layer

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WO2012172860A1 (ja) 2012-12-20
JP2013001721A (ja) 2013-01-07
KR20140024342A (ko) 2014-02-28
TW201249740A (en) 2012-12-16
US20140106576A1 (en) 2014-04-17

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Application publication date: 20140108