CN103382547B - 电介质薄膜的反应溅射沉积 - Google Patents
电介质薄膜的反应溅射沉积 Download PDFInfo
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- CN103382547B CN103382547B CN201310169432.0A CN201310169432A CN103382547B CN 103382547 B CN103382547 B CN 103382547B CN 201310169432 A CN201310169432 A CN 201310169432A CN 103382547 B CN103382547 B CN 103382547B
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- reacting gas
- sputter
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0063—Reactive sputtering characterised by means for introducing or removing gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3417—Arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3464—Operating strategies
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Plasma Technology (AREA)
Abstract
Description
Claims (17)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810259657.8A CN108359945A (zh) | 2012-05-04 | 2013-05-06 | 电介质薄膜的反应溅射沉积 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261642752P | 2012-05-04 | 2012-05-04 | |
US61/642,752 | 2012-05-04 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810259657.8A Division CN108359945A (zh) | 2012-05-04 | 2013-05-06 | 电介质薄膜的反应溅射沉积 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103382547A CN103382547A (zh) | 2013-11-06 |
CN103382547B true CN103382547B (zh) | 2018-04-27 |
Family
ID=48190414
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810259657.8A Pending CN108359945A (zh) | 2012-05-04 | 2013-05-06 | 电介质薄膜的反应溅射沉积 |
CN201310169432.0A Active CN103382547B (zh) | 2012-05-04 | 2013-05-06 | 电介质薄膜的反应溅射沉积 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810259657.8A Pending CN108359945A (zh) | 2012-05-04 | 2013-05-06 | 电介质薄膜的反应溅射沉积 |
Country Status (4)
Country | Link |
---|---|
US (4) | US9988705B2 (zh) |
EP (1) | EP2660350B1 (zh) |
JP (2) | JP6244103B2 (zh) |
CN (2) | CN108359945A (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6244103B2 (ja) | 2012-05-04 | 2017-12-06 | ヴァイアヴィ・ソリューションズ・インコーポレイテッドViavi Solutions Inc. | 反応性スパッタ堆積のための方法および反応性スパッタ堆積システム |
KR101947861B1 (ko) * | 2012-12-18 | 2019-02-13 | 가부시키가이샤 알박 | 성막 방법 및 성막 장치 |
GB201319654D0 (en) * | 2013-11-07 | 2013-12-25 | Spts Technologies Ltd | Deposition of silicon dioxide |
DE102014103744A1 (de) * | 2014-01-09 | 2015-02-26 | Von Ardenne Gmbh | Verfahren zum reaktiven Sputtern |
CN107532290B (zh) * | 2015-03-31 | 2022-04-01 | 布勒阿尔策瑙股份有限公司 | 用于生产涂覆的基板的方法 |
US10168459B2 (en) * | 2016-11-30 | 2019-01-01 | Viavi Solutions Inc. | Silicon-germanium based optical filter |
CN107841712B (zh) * | 2017-11-01 | 2018-10-30 | 浙江水晶光电科技股份有限公司 | 高折射率氢化硅薄膜的制备方法、高折射率氢化硅薄膜、滤光叠层和滤光片 |
US11038153B2 (en) * | 2019-01-15 | 2021-06-15 | Applied Materials, Inc. | Methods for HMDSO thermal stability |
US11505866B2 (en) * | 2019-04-25 | 2022-11-22 | Shibaura Mechatronics Corporation | Film formation apparatus and film formation method |
CN110578127B (zh) * | 2019-10-31 | 2024-05-24 | 浙江工业大学 | 一种提升磁控溅射镀膜沉积速率装置 |
KR102385038B1 (ko) * | 2020-03-16 | 2022-04-12 | 티오에스주식회사 | 단결정 금속산화물 반도체 에피 성장 장치 |
CN114229968B (zh) * | 2021-11-22 | 2023-03-14 | 清华大学 | 电芬顿装置和处理污染物的方法 |
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-
2013
- 2013-05-02 JP JP2013096735A patent/JP6244103B2/ja active Active
- 2013-05-03 US US13/887,013 patent/US9988705B2/en active Active
- 2013-05-03 EP EP13166446.8A patent/EP2660350B1/en active Active
- 2013-05-06 CN CN201810259657.8A patent/CN108359945A/zh active Pending
- 2013-05-06 CN CN201310169432.0A patent/CN103382547B/zh active Active
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2017
- 2017-11-13 JP JP2017218652A patent/JP6458118B2/ja active Active
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2018
- 2018-06-04 US US15/997,079 patent/US10920310B2/en active Active
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2021
- 2021-02-05 US US17/248,738 patent/US11584982B2/en active Active
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2023
- 2023-02-17 US US18/171,058 patent/US20230203636A1/en active Pending
Patent Citations (4)
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US5122251A (en) * | 1989-06-13 | 1992-06-16 | Plasma & Materials Technologies, Inc. | High density plasma deposition and etching apparatus |
US5989654A (en) * | 1996-07-08 | 1999-11-23 | Matsushita Electric Industrial Co., Ltd. | Method for manufacturing an optical information recording medium |
US5855745A (en) * | 1997-04-23 | 1999-01-05 | Sierra Applied Sciences, Inc. | Plasma processing system utilizing combined anode/ ion source |
CN101356297A (zh) * | 2006-01-25 | 2009-01-28 | 株式会社爱发科 | 溅镀装置及成膜方法 |
Also Published As
Publication number | Publication date |
---|---|
US20230203636A1 (en) | 2023-06-29 |
EP2660350B1 (en) | 2015-07-15 |
JP6458118B2 (ja) | 2019-01-23 |
US9988705B2 (en) | 2018-06-05 |
CN108359945A (zh) | 2018-08-03 |
US20180282855A1 (en) | 2018-10-04 |
JP2013241677A (ja) | 2013-12-05 |
JP6244103B2 (ja) | 2017-12-06 |
US10920310B2 (en) | 2021-02-16 |
US11584982B2 (en) | 2023-02-21 |
JP2018048408A (ja) | 2018-03-29 |
US20210156019A1 (en) | 2021-05-27 |
CN103382547A (zh) | 2013-11-06 |
US20130292244A1 (en) | 2013-11-07 |
EP2660350A1 (en) | 2013-11-06 |
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Address after: No. 430 Mccarthy Boulevard in California, Milpitas, America Applicant after: VIAVI Technology Co., Ltd. Address before: The United States of California, Milpitas Applicant before: Flex Products Inc. A. JDS Unipha |
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