JPS6436762A - Manufacture of transparent conductive film - Google Patents

Manufacture of transparent conductive film

Info

Publication number
JPS6436762A
JPS6436762A JP19212187A JP19212187A JPS6436762A JP S6436762 A JPS6436762 A JP S6436762A JP 19212187 A JP19212187 A JP 19212187A JP 19212187 A JP19212187 A JP 19212187A JP S6436762 A JPS6436762 A JP S6436762A
Authority
JP
Japan
Prior art keywords
transparent conductive
film
conductive film
gas
above substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19212187A
Other languages
Japanese (ja)
Inventor
Soichi Matsuzaki
Hiroshi Yamaguchi
Takayuki Yamanaka
Minoru Osada
Masateru Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lincstech Circuit Co Ltd
Original Assignee
Hitachi Condenser Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Condenser Co Ltd filed Critical Hitachi Condenser Co Ltd
Priority to JP19212187A priority Critical patent/JPS6436762A/en
Publication of JPS6436762A publication Critical patent/JPS6436762A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To stabilize a film without deteriorating electric conductivity, by forming a transparent conductive film and then exposing the film to an oxygen or steam atmosphere. CONSTITUTION:An insulating substrate 1, such as high polymer film, is allowed to travel on the peripheral surface of a can 4, and, right under the can 4, a transparent conductive film of indium oxide, etc., is vapor-deposited on the above substrate 1 by means of sputtering. Subsequently, at the time of passing the above substrate 1 on a heating roller 5 prior to winding or at the time of winding, an oxygen gas or a steam gas is blown through a gas-introducing pipe 6 against the above substrate 1. By this method, the rate of change in film resistance can be reduced and the general-purpose transparent conductive film can be obtained.
JP19212187A 1987-07-31 1987-07-31 Manufacture of transparent conductive film Pending JPS6436762A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19212187A JPS6436762A (en) 1987-07-31 1987-07-31 Manufacture of transparent conductive film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19212187A JPS6436762A (en) 1987-07-31 1987-07-31 Manufacture of transparent conductive film

Publications (1)

Publication Number Publication Date
JPS6436762A true JPS6436762A (en) 1989-02-07

Family

ID=16286022

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19212187A Pending JPS6436762A (en) 1987-07-31 1987-07-31 Manufacture of transparent conductive film

Country Status (1)

Country Link
JP (1) JPS6436762A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130292244A1 (en) * 2012-05-04 2013-11-07 Georg J. Ockenfuss Reactive sputter deposition of dielectric films

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130292244A1 (en) * 2012-05-04 2013-11-07 Georg J. Ockenfuss Reactive sputter deposition of dielectric films
US9988705B2 (en) * 2012-05-04 2018-06-05 Viavi Solutions Inc. Reactive sputter deposition of silicon films
US10920310B2 (en) 2012-05-04 2021-02-16 Viavi Solutions Inc. Reactive sputter deposition of dielectric films
US11584982B2 (en) 2012-05-04 2023-02-21 Viavi Solutions Inc. Reactive sputter deposition of dielectric films

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