CN103262238A - 电路装置 - Google Patents

电路装置 Download PDF

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Publication number
CN103262238A
CN103262238A CN2011800563699A CN201180056369A CN103262238A CN 103262238 A CN103262238 A CN 103262238A CN 2011800563699 A CN2011800563699 A CN 2011800563699A CN 201180056369 A CN201180056369 A CN 201180056369A CN 103262238 A CN103262238 A CN 103262238A
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Prior art keywords
lead
wire
circuit
substrate
circuit substrate
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CN2011800563699A
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CN103262238B (zh
Inventor
柴崎孝
西塔秀史
牧野高久
清水胜德
佐佐木大辅
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Semiconductor Components Industries LLC
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Semiconductor Components Industries LLC
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Abstract

提供一种内置有对大电流进行开关的半导体元件的小型电路装置。在本发明中，将导通大电流的引线28和引线30重叠配置在电路基板12的上面。另外，在电路基板12上固定安装有多个陶瓷基板22A—22F，在这些陶瓷基板的上面安装有晶体管、二极管或电阻。并且，晶体管、二极管等电路元件经由金属细线与引线28或引线30连接。

Description

电路装置
技术领域
本发明涉及一种电路装置，特别是涉及在电路基板的上面安装有对大电流进行开关的功率类半导体元件的电路装置。
背景技术
参照图9说明现有类型的混合集成电路装置100的结构。首先，在矩形基板101的表面经由厚度200μm左右的绝缘层102形成有导电图案103，在该导电图案103的所希望的部位上连接电路元件而形成规定电路。在此，固定安装有半导体元件105A和片状元件105B作为电路元件。并且，形成于半导体元件105A上表面的电极经由金属细线114与所希望的导电图案103连接，设置于片状元件105B两端的电极经由焊料固定安装于导电图案。另外，引线104与由形成于基板101周边部的导电图案109构成的焊盘连接，作为外部端子发挥作用。密封部件108具有密封形成于基板101表面的电路的功能。
壳体部件111具有近似画框形状，与基板101的侧面抵接，由此，在基板101的上面形成用于填充密封树脂108的空间。
具有上述结构的混合集成电路装置100的制造方法如下：首先，在上表面被由树脂构成的绝缘层102覆盖的基板101的上面形成具有规定形状的导电图案103。接着，在基板101的上面载置半导体元件105A等电路元件，并电连接规定的导电图案103与半导体元件105A。并且，在形成为焊盘状的导电图案103上固定安装引线104。接着，安装壳体部件111，在由壳体部件111围成的空间内注入液体状或者半固体状的密封树脂108之后进行加热固化，从而树脂密封半导体元件105A和金属细线114。
现有技术文献
专利文献
专利文献1：（日本）特开2007-036014号公报
发明内容
发明要解决的技术课题
然而，在具有上述结构的混合集成电路装置100中，经由形成于基板101上面的厚度100μm左右的导电图案103，连接引线104与半导体元件105A。因此，在利用半导体元件105A对数十安培左右的大电流进行开关时，为了确保较大的电流容量，需要增大导电图案103的宽度，这阻碍了混合集成电路装置100的小型化。
本发明鉴于上述问题而提出，本发明的主要目的在于提供一种内置有对大电流进行开关的半导体元件的小型电路装置。
用于解决技术课题的技术方案
本发明的电路装置的特征在于，包括电路基板、在所述电路基板的上面配置的半导体元件、在所述电路基板的上面与所述半导体元件电连接的第一引线以及与所述半导体元件电连接并且至少一部分与所述第一引线重叠配置的第二引线。
发明效果
利用本发明，以与电路基板绝缘的状态将与内置的半导体元件连接的第一引线和第二引线重叠配置。由此，在电路基板的上面，第一引线和第二引线的占有面积变小，从而有助于装置整体的小型化。
并且，安装于电路基板的上面的半导体元件不是与电路基板上的导电图案连接，而是与配置在电路基板的上面的引线直接连接。因此，因为无需在电路基板的上面形成导电图案，所以排除了电路基板与导电图案短路的问题。
附图说明
图1是表示本发明电路装置的视图，（A）是俯视图，（B）是剖面图。
图2是放大表示本发明电路装置中安装有陶瓷基板的部位的剖面图。
图3是放大表示本发明电路装置中安装有构成变换电路的电路元件的部位的俯视图。
图4是放大表示本发明电路装置中安装有构成逆变电路的电路元件的部位的俯视图。
图5（A）表示安装有本发明电路装置的太阳能发电系统的电路图，（B）是其一部分的放大电路图。
图6是表示本发明电路装置制造方法的视图，（A）是俯视图，（B）是剖面图，（C）是放大剖面图。
图7是表示本发明电路装置制造方法的视图，（A）是俯视图，（B）是剖面图，（C）是放大剖面图。
图8是表示本发明电路装置制造方法的视图，（A）—（C）是剖面图。
图9是表示背景技术的电路装置的剖面图。
具体实施方式
参照图1至图4说明作为电路装置一例的混合集成电路装置10的构成。
参照图1，混合集成电路装置10主要包括电路基板12、在电路基板12的上面重叠的两条引线28,30、在电路基板12的上面接近引线28,30配置的晶体管34等电路元件、固定安装于电路基板12的上表面的画框状的壳体部件14及填充于壳体部件14所围成的区域的密封树脂16。
电路基板12是以铝（Al）或铜（Cu）等为主材料的电路基板。在采用由铝构成的基板作为电路基板12时，电路基板12的两个主面被阳极氧化膜覆盖。为了提高散热性，电路基板12的厚度例如在0.5mm以上2.0mm以下左右。需要说明的是，作为电路基板12的材料，也可以采用除金属以外的材料，例如可以采用玻璃环氧基板等树脂材料或者陶瓷等。在此，如图2所示，由金属构成的电路基板12的上表面被由树脂材料构成的厚度60μm左右的绝缘层50覆盖，在该绝缘层50的上表面形成有岛部18。
引线28安装于壳体部件14，其一端在纸面上的左侧导出到外部，并且以横穿电路基板12的中央部的方式配置在电路基板12的上面。该引线28连接于直流电源的正极侧，经逆变电路转换之前的直流电力通过该引线28。另外，引线28的宽度为例如7mm左右，形成为宽度比重叠配置于引线28上方的引线30的宽度（5mm）宽。由此，使配置于下方的输出引线28的上表面的一部分露出，从而能够在该露出的上表面部分连接金属细线。
引线30以重叠于引线28上方的方式安装于壳体部件14。在此，引线30不在外部露出，经由形成于陶瓷基板22D上表面的导电图案与导出到外部的引线29连接。引线30经由在外部露出的引线29与直流电源的负极侧连接，具有在装置内部导通（引き回す）直流电力的功能。在此，引线28,30的厚度例如在1mm以上。
另外，参照图1（B），引线28和引线30通过使壳体部件14的绝缘材料设于二者之间而被绝缘。具体地说，引线28与引线30在厚度方向上分开的距离例如在1mm以上。并且，引线28的下表面与基板12的上表面利用壳体部件14的绝缘材料绝缘，该绝缘材料的厚度例如在1mm以上。
另一方面，如图1（A）所示，设置于壳体部件14的纸面上的下方侧边的引线31,32,33是将经内置的逆变电路转换的交流电力输出的引线。这些引线在内部露出的部分经由金属细线与半导体元件连接。在此，在各引线的在外部露出的部分，设置有用于螺纹止动的通孔或者与设置侧PCB焊料连接的单板（オンボード）。
壳体部件14是通过将环氧树脂等树脂材料注塑成形为画框形状的材料，安装有上述各引线。另外，通过壳体部件14固定安装在电路基板12的周边部的上表面，在电路基板12的上面设置有树脂密封晶体管34等电路元件的空间。并且，在壳体部件14的纸面上的上下侧边配置有与内置的半导体元件的控制电极连接的配线引线40。
陶瓷基板22A—22G由Al2O3（氧化铝）或AlN（氮化铝）等无机固体材料形成，厚度例如在0.25mm以上1.0mm以下。陶瓷基板22具有使安装于其上面的晶体管34与电路基板12绝缘的作用。陶瓷基板22固定安装于电路基板12的结构将于后文参照图2叙述。另外，晶体管34和二极管36在工作时所产生的热量经由陶瓷基板22和电路基板12向外部散放。
参照图1（B），配线引线40的上端部附近插入基板42的通孔而被固定。即，配置于电路基板12的上面的晶体管34等电路元件经由配线引线40与基板42电连接。在基板42上配置有多个信号引线44，该信号引线44作为外部连接端子发挥作用。基板42是在例如厚度为1mm左右的玻璃环氧基板的主面形成有导电图案的基板。基板42也可以是陶瓷基板或者金属基板。
密封树脂16由填充有氧化铝等填料的环氧等树脂材料构成，填充于壳体部件14所围成的电路基板12的上面的空间。并且，密封树脂16树脂密封陶瓷基板22A等、晶体管34、二极管36、金属细线26、基板42等。
参照图1（A），在电路基板12的上面配置有多个陶瓷基板。具体地说，在电路基板12的上面固定安装有七个陶瓷基板22A—22G，并且在各陶瓷基板22A—22G的上面安装有规定的电路元件。
在陶瓷基板22A,22B,22E,22F的上面安装有IGBT、MOSFET等晶体管和二极管，并由这些元件构成逆变电路。在陶瓷基板22C上安装有二极管，在陶瓷基板22G上安装有IGBT、MOSFET等晶体管，并且由这些元件构成变换电路。另外，在陶瓷基板22D的上面配置有用于检测电流值的电阻。
在本方式中，将导通例如七十安培左右直流电流的引线28和引线30重叠配置在电路基板12的上面。由此，与将两条引线配置在同一平面的情况相比，引线28,30占有的面积变小，因此使得装置整体实现小型化。
另外，在本方式中，在将电路基板12的中央部附近等分的区域重叠配置引线28,30。在这些引线重叠配置的区域附近配置晶体管等电路元件并经由金属细线与引线28,30连接。由此，晶体管等电路元件接近引线28,30配置，使得连接二者的金属细线的线长变短，从而能够使连接机构的电阻变小。
另外，在本方式中，将与直流电源的正极侧连接的引线28和与直流电源的负极侧连接的引线30重叠而得到双配线效果（ペア配線の効果）。具体地说，通过使电流导通引线30时所产生的磁场与电流导通引线28时所产生的磁场相互抵消，使产生的噪声变小。
另外，在本方式中，包含于逆变电路的串联连接的两个晶体管隔着引线28,30配置。
另外，在本方式中，经由横截面积大的引线28,30,31A—31C，在电路基板12的上面将晶体管等电路装置元件彼此连接，从而提高电特性。具体地说，配线电感被降低，L负载下开关工作时所产生的开关电压振动及噪声的产生量被抑制。
参照图2说明将陶瓷基板22固定安装于电路基板12的结构。首先，在电路基板12为由铝构成的电路基板时，电路基板12的上表面和下表面被由通过阳极氧化而形成的氧化铝膜构成的氧化膜46,48覆盖。并且，形成有氧化膜46的电路基板12的上表面被绝缘层50覆盖，其中绝缘层50由大量填充有填料的树脂材料构成。
在电路基板12的上面形成有岛部18，该岛部18是厚度为50μm左右的铜等金属膜被蚀刻为规定形状而形成的。该岛部18不作为使电信号通过的配线使用。在本方式中，岛部18用来提高固定安装陶瓷基板22时的固定安装材料38的浸润性。
在陶瓷基板22的下表面覆盖有厚度为250μm左右的金属膜20。在此，金属膜20在陶瓷基板22的整个下表面以紧贴（ベタ）的状态形成。由此，在使用焊料作为固定安装材料38时，焊料良好地熔敷于陶瓷基板22的整个下表面。另外，在设置于电路基板12上面的岛部18上也良好地熔敷焊料。因此，经由固定安装材料38将陶瓷基板22牢固地固定安装于电路基板12。并且，通过使用热传导性良好的金属焊料作为固定安装材料38，在晶体管34工作时所产生的热量有效地传导至电路基板12。
在陶瓷基板22的上表面形成有导电图案24，该导电图案24是厚度为250μm左右的金属膜被蚀刻为规定形状而形成的。并且，在该导电图案24上经由焊料等导电性固定安装材料安装有晶体管34和二极管36。导电图案24构成供晶体管34等电路元件安装的岛部、用于使各元件彼此连接的配线部以及用于接合金属细线的焊盘等。
作为晶体管34采用MOSFET、IGBT、双极晶体管。在本方式中，晶体管34对例如电流值在一安培以上的大电流进行开关。设置于晶体管34下表面的电极经由焊料等导电性固定安装材料与导电图案24连接。在以下说明采用IGBT作为晶体管的情况。
二极管36使设置于上表面的电极经由金属细线26与晶体管34连接，下表面的电极经由焊料等导电性固定安装剂与导电图案24连接。
作为具体的例子，在晶体管34为IGBT时，设置于晶体管34上表面的发射极经由金属细线26与设置于二极管上表面的阳极连接。设置于晶体管34下表面的集电极经由导电图案24与设置于二极管下表面的阴极连接。该连接结构的详细情况将于后文参照图3和图4叙述。
在此，上述的在晶体管等的电连接中使用的金属细线26例如是由直径为150μm～500μm左右的铝构成的金属线。另外，也可以采用将铝等金属箔形成为带状的带式接合来代替金属细线26。
在本方式中，与背景技术同样地在电路基板12的上表面设置有由树脂构成的绝缘层50。绝缘层50的厚度例如为60μm（50μm以上70μm以下）。绝缘层50的材料与背景技术相同，可以是大量填充有氧化铝等填料的环氧树脂等树脂材料。
用绝缘层50覆盖电路基板12上表面的目的在于使岛部18容易地形成。即，虽然可以在覆盖电路基板12上表面的氧化膜46的上表面直接形成由铜构成的岛部18，但是这样会使电路基板12与岛部18的紧贴强度降低。因此，在本方式中，通过在电路基板12与岛部18之间设置由有机材料构成的绝缘层50，提高岛部18与电路基板12的紧贴强度。
形成得较薄的绝缘层50的耐压与背景技术中的耐压相比较低，但是因为形成于绝缘层50上表面的岛部18并没有与晶体管34连接，所以在本方式中绝缘层50不需要高耐压。
并且，本方式的较薄的绝缘层50的热导率在4W/mK以上，与背景技术中的200μm左右较厚的绝缘层102的热导率相比，在四倍以上。因此，晶体管34产生的热量能够经由绝缘层50有效地散放至外部。
在此，在上述说明中，晶体管34和二极管36固定安装在绝缘性的陶瓷基板22的上面，但是也可以在形成于电路基板12上表面的导电图案上直接固定安装晶体管34等。
图3说明在混合集成电路装置的内部连接构成逆变电路的1GBT（Q1）和二极管D1的结构。在此，在陶瓷基板22G的上面安装有两个IGBT（Q1）。在陶瓷基板22C的上面安装有五个二极管。在此，IGBT（Q1）和二极管D1隔着引线28、引线30相对配置。
在IGBT（Q1）的背面设置的集电极经由焊料等导电性固定安装材料与陶瓷基板22G的导电图案连接，其上表面的发射极经由金属细线26与引线30连接，其上表面的栅极经由金属细线26与配线引线40连接。由此，IGBT（Q1）的表面发射极经由引线30与直流电源的负极侧连接。在此，两个IGBT（Q1）的各电极并联连接，由此确保较大的电流容量。
在陶瓷基板22C的上面经由焊料连接有五个二极管D1的阴极。在二极管D1上表面的阳极经由金属细线26与陶瓷基板22G的导电图案（即，设置于IGBT（Q1）背面的集电极）和引线33连接。并且，陶瓷基板22C的导电图案经由金属细线26与引线28连接。由此，二极管D1的阴极与直流电源的正极侧连接。在此，包含有IGBT（Q1）等的变换电路的构成等将于后文参照图5（A）说明。
参照图4说明连接构成逆变电路的各元件的结构。在此，在电路基板12的中央部附近，在纸面上的横向上重叠配置有引线28与引线30。在引线28上施加有经变换电路升压的直流电压。在此，IGBT（Q3）与IGBT（Q2）在直流电源之间串联连接并互补地进行开关，从而生成具有规定频率的交流电力，对此之后将参照电路图进行说明。
在引线28,30的纸面的上侧，在陶瓷基板22F上连接有IGBT（Q3）和二极管D3。IGBT（Q3）和二极管D3的背面电极经由焊料固定安装于在陶瓷基板22F的上表面设置的同一导电图案。因此，设置于IGBT（Q3）背面的集电极与设置于二极管D3背面的阴极经由陶瓷基板22F的导电图案被连接。另外，设置于IGBT（Q3）上表面的栅极经由金属细线26与壳体部件14侧壁所具有的配线引线40连接。并且，IGBT（Q3）的发射极和二极管D3的阳极经由多个金属细线26与引线30连接。
需要说明的是，在陶瓷基板22F的上面安装有两个IGBT（Q3）并且两个元件的各电极公共地连接。即，两个IGBT（Q3）并联连接以确保更多的电流容量。关于这一点，其他陶瓷基板也相同。
另外，陶瓷基板22F的导电图案经由金属细线26与安装于陶瓷基板22B的二极管D2的阳极和IGBT（Q2）的发射极连接，并且与引线32连接。连接这些元件的金属细线26越过引线28,30的上方而形成。
在设置于陶瓷基板22B上表面的导电图案上，经由焊料等导电性固定安装材料安装有设置于IGBT（Q2）背面的集电极和安装于二极管D2背面的阴极。另外，安装有这些元件的导电图案经由金属细线26与引线28连接。并且，IGBT（Q2）的栅极经由金属细线26分别与配线引线40连接。
利用如上述那样连接的IGBT（Q2）和IGBT（Q3）将直流电力转换成交流电力。具体地说，引线28和引线30所供给的直流电力供给到IGBT（Q2）和IGBT（Q3）。并且，这些IGBT基于控制信号互补地进行开关而生成交流电力，这些交流电力经由引线33输出至外部。
在此，参照图1（A），安装于陶瓷基板22F,22B的上面的电路元件及其连接结构也与上述情况相同。即，在陶瓷基板22F,22B的上面安装有二极管和晶体管。并且，安装于陶瓷基板22F的晶体管与安装于陶瓷基板22B的晶体管经由金属细线26串联连接。其结果，从引线30、引线28供给的直流电力经安装于陶瓷基板22F、22B的晶体管被转换成交流电力，该交流电力经由引线32向外部输出。
参照图5，接着说明安装有上述混合集成电路装置10的太阳能电池发电系统的电路结构。图5（A）是整体表示太阳能电池发电系统的电路图。图5（B）是详细表示该系统所包括的IGBT（Q3）的电路图。
该图所示的发电系统包括太阳能电池70、太阳能电池开闭部72、升压斩波器74、逆变器76及继电器78,80。利用这样构成的发电装置所产生的电力供给至电力系统82或自运行用负载84。另外，在本方式的混合集成电路装置10中安装有升压斩波器74一部分即变换器86和逆变器76。
太阳能电池70是将被照射的光转换成电力并输出的转换器，输出直流电力。在此，只图示了一个太阳能电池70，但是也可以以串联连接或者并联连接的方式采用多个太阳能电池70。
太阳能电池开闭部72具有收集太阳能电池70所产生的电并防止逆流的同时将直流电流供给至升压斩波器74的功能。
升压斩波器74具有将太阳能电池70所供给的直流电力的电压升压的功能。在升压斩波器74中，IGBT（Q1）周期性地重复进行导通动作和关断动作，将太阳能电池70发电产生的250V左右电压的直流电力升压至300V左右的直流电力。具体地说，升压斩波器74包括与太阳能电池的输出端子串联连接的线圈L1和在线圈L1与接地端子之间连接的IGBT(Q1)。并且，经线圈L1升压的直流电力经由用来作为逆流元件的二极管D1和用于平滑的电容器C1供给至下一段的逆变器76。
在本方式中，包括在升压斩波器74中的IGBT（Q1）和二极管D1配置在如图1（A）所示的陶瓷基板22G,22C的上面。另外，IGBT（Q1）的开关动作基于经由如图1（B）所示信号引线44和配线引线40从外部被供给的控制信号进行。
经升压斩波器74升压的直流电力被逆变器76转换成具有规定频率的交流电力。逆变器76包括在升压斩波器74的输出端子之间串联连接的两个IGBT（Q2）和Q3以及同样串联连接的两个IGBT（Q4）和Q5。另外，这些晶体管的开关动作被从外部所供给的控制信号控制，从而Q2和Q3及Q4和Q5互补地进行开关动作。并且，通过这些开关动作而具有规定频率的交流电力从Q2与Q3的连接点和Q4与Q5的连接点向外部输出。在此，构成了由四个晶体管构成的两相逆变电路。需要说明的是，参照图1（A），Q2,Q3,Q4及Q5分别安装于陶瓷基板22B,22F,22A及22E。
经逆变器76转换的交流电力供给至商用电力系统82或者自运行用负载84。在电力系统82与逆变器76之间安装有继电器78。正常情况下，继电器78处于导通状态，检测到其中一方的异常时继电器78变为断开状态。另外，在逆变器76与自运行用负载之间也安装有继电器80，在异常状况时利用继电器80断开电力供给。
另外，在本实施方式中，将包含于升压斩波器74和逆变器76的元件固定安装于如图2所示的陶瓷基板22的上面。因此，即使逆变电路工作，在电路基板12上面形成的岛部18的上表面也不会施加有电压，因此在电路基板12与岛部18之间不会发生短路。
参照图5（B），包含于上述逆变器76的晶体管中的一个即IGBT（Q3）由两个IGBT（Q31）、（Q32）以及与这些晶体管的主电极反向连接的四个二极管D31,D32,D33,D34构成。
IGBT（Q31）与IGBT（Q32）并联连接。具体地说，IGBT（Q31）与IGBT（Q32）的栅极、发射极及集电极公共地连接。由此，与一个晶体管的情况相比，能够得到较大的电流容量。
另外，二极管D31,D32,D33,D34的阳极与IGBT（Q31）和IGBT（Q31）的发射极连接。并且，这些二极管的阴极与IGBT（Q31）和IGBT（Q32）的集电极连接。
参照图6至图8，接着说明上述混合集成电路装置10的制造方法。
参照图6，首先准备电路基板12。图6（A）是表示本工序的俯视图，图6（B）和图6（C）是表示本工序的剖面图。
参照图6（A）和图6（B），所准备的电路基板12是由厚度为1mm～3mm左右较厚的铝或铜等金属构成的电路基板。在采用铝作为电路基板12的材料时，电路基板12的上表面和下表面被阳极氧化膜覆盖。需要说明的是，电路基板12是通过对大型电路基板进行冲压加工或者磨削加工而成形为规定形状的基板。
通过使贴合在电路基板12上表面的铜箔蚀刻成规定形状而形成岛部18A—18G。该岛部18A—18G不仅供晶体管等电路元件安装，也用来提高后述的安装陶瓷基板时所使用的焊料的浸润性。
参照图6（C），在采用铝作为电路基板12的材料时，电路基板12的上表面和下表面被由通过阳极氧化而生成的氧化铝膜构成的氧化膜46,48覆盖。并且，形成有氧化膜46的氧化膜46的上表面被绝缘层50覆盖。绝缘层50的组成和厚度如上文所述。通过设置绝缘层50，使包含作为有机材料的树脂的绝缘层50与岛部18之间的紧贴性良好，因此能够使岛部18牢固地紧贴于电路基板12。
参照图7，接着在电路基板12的规定部位配置陶瓷基板。图7（A）是表示本工序的俯视图，图7（B）和图7（C）是剖面图。
参照图7（A），将安装有晶体管、二极管等规定电路元件的陶瓷基板22A—22G固定安装在电路基板12的上面。在此，将各陶瓷基板22A—22G固定安装于在前工序中形成于电路基板12上面的岛部18A—18G的上表面。
参照图7（C），在陶瓷基板22的上表面和下表面上形成有导电图案24和金属膜20。并且，覆盖陶瓷基板22下表面的金属膜20经由焊料等固定安装材料38固定安装于设置在电路基板12上面的岛部18。陶瓷基板22下表面的整个面上设置紧贴的金属膜20，由此使固定安装材料38紧贴于陶瓷基板22的整个下表面。因此，陶瓷基板22牢固地与电路基板12接合。在此，可以在陶瓷基板22的上面预先固定安装晶体管34和二极管36，也可以将陶瓷基板22固定安装于电路基板12之后安装这些元件。
在本工序中，实施在岛部18的上表面涂布焊膏并在该焊膏的上表面载置陶瓷基板22之后进行加热固化的回流工序，从而面安装陶瓷基板22。在此，形成于陶瓷基板22下表面的金属膜20与形成于电路基板12上表面的岛部18二者均由金属构成，从而焊料的浸润性良好。因此，由熔融的焊料形成的固定安装材料38与二者的整个面接触而得到良好的接合。
参照图8（A），接着在电路基板12的上表面的周边部接合壳体部件14。如上所述，在壳体部件14上预先安装输出引线28,30和配线引线40。壳体部件14经由环氧树脂等接合材料接合在电路基板12的上表面。
参照图8（B），接着用金属细线26将电路元件与各引线电连接。具体地说，将固定安装于陶瓷基板22B上面的晶体管34的栅极经由金属细线26与配线引线40连接。另外，将配置于晶体管34上表面的发射极与设置于二极管36上表面的阳极一同和输出引线30连接。另外，安装于陶瓷基板22F上面的晶体管34经由金属细线26与输出引线28连接。
在本工序中，在电路元件的连接上使用由直径为150μm～500μm左右的铝构成的金属细线。另外，可以采用使用带状铝箔的带式接合来代替使用金属细线的引线接合。
参照图8（C），接着将配线引线40的上端部插入基板42的孔部。由此，各配线引线40经由形成于基板42表面的导电图案与基板42所具有的信号引线44连接。
接着，在壳体部件14所围成的空间内填充密封树脂16。作为密封树脂16，采用硅树脂或环氧树脂。另外，也可以采用填充有氧化铝等填料的树脂材料作为密封树脂16。利用密封树脂16树脂密封晶体管34、二极管36、金属细线26、配线引线40、基板42等。
经过上述工序制造出如图1所示的混合集成电路装置10。
符号说明
10  混合集成电路装置
12  电路基板
14  壳体部件
16  密封树脂
18,18A,18B,18C,18D,18E,18F,18G  岛部
20  金属膜
22,22A,22B,22C,22D,22E,22F,22G  陶瓷基板
24  导电图案
26  金属细线
28  引线
29  引线
30  引线
31  引线
32  引线
33  引线
34  晶体管
36  二极管
38  固定安装材料
40  配线引线
42  基板
44  信号引线
46  氧化膜
48  氧化膜
70  太阳能电池
72  太阳能电池开闭部
74  升压斩波器
76  逆变器
78  继电器
80  继电器
82  电力系统
84  自运行用负载
86  变换器
Q1,Q2,Q3,Q4,Q5,Q31,Q32  IGBT
D1,D2,D3,D31,D32,D32,D34  二极管

Claims (9)

1.一种电路装置，其特征在于，包括：
电路基板；
半导体元件，配置在所述电路基板的上面；
第一引线，在所述电路基板的上面与所述半导体元件电连接；
第二引线，与所述半导体元件电连接，并且至少一部分与所述第一引线重叠配置。
2.如权利要求1所述的电路装置，其特征在于，所述半导体元件包括彼此连接的第一晶体管和第二晶体管，
所述第一晶体管和所述第二晶体管隔着所述第一引线和所述第二引线配置在相对位置上。
3.如权利要求1或2所述的电路装置，其特征在于，所述第一晶体管和所述第二晶体管经由在所述第一引线和所述第二引线的上方形成的金属细线而连接。
4.如权利要求1至3中任一项所述的电路装置，其特征在于，还包括安装于所述电路基板的上面的画框形状的壳体部件，
所述第一引线和所述第二引线以安装于所述壳体部件的状态配置在所述电路基板的上面。
5.如权利要求4所述的电路装置，其特征在于，所述第一引线和所述第二引线通过构成所述壳体部件的树脂材料与所述电路基板绝缘。
6.如权利要求1至4中任一项所述的电路装置，其特征在于，所述电路基板是由金属构成的基板，
所述半导体元件安装在固定安装于所述电路基板的上面的陶瓷基板的上面。
7.如权利要求6所述的电路装置，其特征在于，所述陶瓷基板经由焊料固定安装于形成在所述电路基板的上面的岛部。
8.如权利要求1至7中任一项所述的电路装置，其特征在于，所述半导体元件构成逆变电路，
经由所述第一引线和所述第二引线被供给经所述逆变电路转换成交流电力之前的直流电力。
9.如权利要求1至8中任一项所述的电路装置，其特征在于，所述半导体元件包括使从外部输入的直流电力升压的变换电路和将升压的所述直流电力转换成交流电力的逆变电路；
在所述壳体部件上安装有使所述直流电力输入至内部的引线和使所述交流电力输出至外部的引线。
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