CN103262223A - 集成电路的氢钝化 - Google Patents

集成电路的氢钝化 Download PDF

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Publication number
CN103262223A
CN103262223A CN2010800706081A CN201080070608A CN103262223A CN 103262223 A CN103262223 A CN 103262223A CN 2010800706081 A CN2010800706081 A CN 2010800706081A CN 201080070608 A CN201080070608 A CN 201080070608A CN 103262223 A CN103262223 A CN 103262223A
Authority
CN
China
Prior art keywords
passivation
layer
integrated circuit
hydrogen
deuterium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2010800706081A
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English (en)
Chinese (zh)
Inventor
G·B·巴瑟姆
S·R·萨默菲尔特
T·S·莫伊兹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of CN103262223A publication Critical patent/CN103262223A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/075—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers of multilayered thin functional dielectric layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01338—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid with a treatment, e.g. annealing, after the formation of the conductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
CN2010800706081A 2010-12-09 2010-12-09 集成电路的氢钝化 Pending CN103262223A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2010/059722 WO2012078163A1 (en) 2010-12-09 2010-12-09 Hydrogen passivation of integrated circuits

Publications (1)

Publication Number Publication Date
CN103262223A true CN103262223A (zh) 2013-08-21

Family

ID=46207422

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010800706081A Pending CN103262223A (zh) 2010-12-09 2010-12-09 集成电路的氢钝化

Country Status (3)

Country Link
JP (1) JP2014501045A (https=)
CN (1) CN103262223A (https=)
WO (1) WO2012078163A1 (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104465537A (zh) * 2013-09-16 2015-03-25 英飞凌科技股份有限公司 具有钝化层的半导体元件以及制造方法
CN105826267A (zh) * 2014-12-22 2016-08-03 力晶科技股份有限公司 半导体元件及其制作方法
CN105938799A (zh) * 2015-03-02 2016-09-14 瑞萨电子株式会社 半导体器件的制造方法和半导体器件
CN108389789A (zh) * 2017-02-03 2018-08-10 株式会社Hpsp 半导体热处理方法
CN114040992A (zh) * 2019-06-17 2022-02-11 应用材料公司 含重氢的膜

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002016249A (ja) * 2000-06-30 2002-01-18 Toshiba Corp 半導体装置及びその製造方法
JP2003224206A (ja) * 2002-01-29 2003-08-08 Fujitsu Ltd 半導体装置及びその製造方法
JP2008210869A (ja) * 2007-02-23 2008-09-11 Canon Inc 光電変換装置の製造方法
JP2009289919A (ja) * 2008-05-28 2009-12-10 Fujitsu Microelectronics Ltd 半導体装置とその製造方法
JP2010093064A (ja) * 2008-10-08 2010-04-22 Panasonic Corp 半導体装置及びその製造方法
US20100224961A1 (en) * 2009-03-06 2010-09-09 Texas Instruments Incorporated Passivation of integrated circuits containing ferroelectric capacitors and hydrogen barriers

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0845926A (ja) * 1994-07-26 1996-02-16 Sony Corp 半導体装置およびその製造方法
US6781184B2 (en) * 2001-11-29 2004-08-24 Symetrix Corporation Barrier layers for protecting metal oxides from hydrogen degradation
JP2007150025A (ja) * 2005-11-29 2007-06-14 Seiko Epson Corp 強誘電体メモリの製造方法
EP2032105A2 (en) * 2006-06-23 2009-03-11 Jentec Inc. Superthin wound dressing having folded release sheet
US7985603B2 (en) * 2008-02-04 2011-07-26 Texas Instruments Incorporated Ferroelectric capacitor manufacturing process

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002016249A (ja) * 2000-06-30 2002-01-18 Toshiba Corp 半導体装置及びその製造方法
JP2003224206A (ja) * 2002-01-29 2003-08-08 Fujitsu Ltd 半導体装置及びその製造方法
JP2008210869A (ja) * 2007-02-23 2008-09-11 Canon Inc 光電変換装置の製造方法
JP2009289919A (ja) * 2008-05-28 2009-12-10 Fujitsu Microelectronics Ltd 半導体装置とその製造方法
JP2010093064A (ja) * 2008-10-08 2010-04-22 Panasonic Corp 半導体装置及びその製造方法
US20100224961A1 (en) * 2009-03-06 2010-09-09 Texas Instruments Incorporated Passivation of integrated circuits containing ferroelectric capacitors and hydrogen barriers

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104465537A (zh) * 2013-09-16 2015-03-25 英飞凌科技股份有限公司 具有钝化层的半导体元件以及制造方法
CN104465537B (zh) * 2013-09-16 2017-11-24 英飞凌科技股份有限公司 具有钝化层的半导体元件以及制造方法
CN105826267A (zh) * 2014-12-22 2016-08-03 力晶科技股份有限公司 半导体元件及其制作方法
CN105826267B (zh) * 2014-12-22 2018-09-21 力晶科技股份有限公司 半导体元件及其制作方法
CN105938799A (zh) * 2015-03-02 2016-09-14 瑞萨电子株式会社 半导体器件的制造方法和半导体器件
CN105938799B (zh) * 2015-03-02 2021-04-06 瑞萨电子株式会社 半导体器件的制造方法和半导体器件
CN108389789A (zh) * 2017-02-03 2018-08-10 株式会社Hpsp 半导体热处理方法
CN108389789B (zh) * 2017-02-03 2022-08-12 株式会社Hpsp 半导体热处理方法
CN114040992A (zh) * 2019-06-17 2022-02-11 应用材料公司 含重氢的膜

Also Published As

Publication number Publication date
WO2012078163A1 (en) 2012-06-14
JP2014501045A (ja) 2014-01-16

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