CN103222068B - 太阳能电池及其制造方法 - Google Patents

太阳能电池及其制造方法 Download PDF

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Publication number
CN103222068B
CN103222068B CN201180056408.5A CN201180056408A CN103222068B CN 103222068 B CN103222068 B CN 103222068B CN 201180056408 A CN201180056408 A CN 201180056408A CN 103222068 B CN103222068 B CN 103222068B
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CN
China
Prior art keywords
layer
buffer layer
solar cell
light absorbing
back electrode
Prior art date
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Expired - Fee Related
Application number
CN201180056408.5A
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English (en)
Chinese (zh)
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CN103222068A (zh
Inventor
林真宇
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LG Innotek Co Ltd
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LG Innotek Co Ltd
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Publication of CN103222068A publication Critical patent/CN103222068A/zh
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Publication of CN103222068B publication Critical patent/CN103222068B/zh
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/161—Photovoltaic cells having only PN heterojunction potential barriers comprising multiple PN heterojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1694—Thin semiconductor films on metallic or insulating substrates the films including Group I-III-VI materials, e.g. CIS or CIGS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
CN201180056408.5A 2011-01-25 2011-10-06 太阳能电池及其制造方法 Expired - Fee Related CN103222068B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2011-0007516 2011-01-25
KR1020110007516A KR101219835B1 (ko) 2011-01-25 2011-01-25 태양전지 및 이의 제조방법
PCT/KR2011/007394 WO2012102449A1 (en) 2011-01-25 2011-10-06 Solar cell and method for manufacturing the same

Publications (2)

Publication Number Publication Date
CN103222068A CN103222068A (zh) 2013-07-24
CN103222068B true CN103222068B (zh) 2016-08-17

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180056408.5A Expired - Fee Related CN103222068B (zh) 2011-01-25 2011-10-06 太阳能电池及其制造方法

Country Status (6)

Country Link
US (1) US9818902B2 (enExample)
EP (1) EP2619800B1 (enExample)
JP (1) JP2014503125A (enExample)
KR (1) KR101219835B1 (enExample)
CN (1) CN103222068B (enExample)
WO (1) WO2012102449A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106531827A (zh) * 2015-09-15 2017-03-22 株式会社东芝 光电转换元件、太阳能电池、太阳能电池模块及太阳光发电系统
CN105514198B (zh) * 2015-12-29 2017-03-08 中国科学院深圳先进技术研究院 薄膜太阳能电池及其缓冲层的制备方法
KR20170097440A (ko) * 2016-02-18 2017-08-28 전영권 태양전지 및 그 제조방법
CN106449875A (zh) * 2016-10-10 2017-02-22 北京四方创能光电科技有限公司 一种利用MgZnO薄膜制作CIGS薄膜太阳能电池的方法
CN108321216A (zh) * 2018-01-30 2018-07-24 北京铂阳顶荣光伏科技有限公司 一种可调光学带隙的氧锌镁材料、制备方法及太阳能电池

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010058640A1 (ja) * 2008-11-19 2010-05-27 三菱重工業株式会社 光電変換装置
CN101840942A (zh) * 2010-05-19 2010-09-22 深圳丹邦投资集团有限公司 一种薄膜太阳电池及其制造方法

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US5720827A (en) * 1996-07-19 1998-02-24 University Of Florida Design for the fabrication of high efficiency solar cells
JP2000332273A (ja) * 1999-05-25 2000-11-30 Matsushita Electric Ind Co Ltd 太陽電池およびその製造方法
JP2003264306A (ja) * 2002-03-07 2003-09-19 Matsushita Electric Ind Co Ltd 太陽電池の製造方法
JP2004158619A (ja) * 2002-11-06 2004-06-03 Matsushita Electric Ind Co Ltd 電子デバイスおよびその製造方法
US7038250B2 (en) 2003-05-28 2006-05-02 Kabushiki Kaisha Toshiba Semiconductor device suited for a high frequency amplifier
JP4841173B2 (ja) 2005-05-27 2011-12-21 昭和シェル石油株式会社 Ｃｉｓ系薄膜太陽電池の高抵抗バッファ層・窓層連続製膜方法及び製膜装置
KR20080009346A (ko) * 2006-07-24 2008-01-29 주식회사 엘지화학 태양전지 버퍼층의 제조방법
US20100252110A1 (en) 2007-09-28 2010-10-07 Fujifilm Corporation Solar cell
JP5007907B2 (ja) * 2008-05-09 2012-08-22 株式会社豊田中央研究所 エッチング液及び半導体素子の製造方法
JP2010074069A (ja) * 2008-09-22 2010-04-02 Rohm Co Ltd 半導体発光素子
KR20100066975A (ko) * 2008-12-10 2010-06-18 엘지이노텍 주식회사 태양전지 및 이의 제조방법
CN101814537B (zh) 2009-02-19 2012-03-28 中国科学院半导体研究所 氮化镓基雪崩型探测器及其制作方法
JP4997611B2 (ja) 2009-04-02 2012-08-08 独立行政法人国立高等専門学校機構 薄膜太陽電池の製造方法
DE102009050987B3 (de) * 2009-05-12 2010-10-07 Schott Ag Dünnschichtsolarzelle und Verfahren zur Herstellung einer Dünnschichtsolarzelle
JP2010272613A (ja) 2009-05-20 2010-12-02 Fujifilm Corp 光電変換素子用基板とその製造方法、光電変換素子、及び太陽電池
JP2011009287A (ja) 2009-06-23 2011-01-13 Showa Shell Sekiyu Kk Ｃｉｓ系薄膜太陽電池

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010058640A1 (ja) * 2008-11-19 2010-05-27 三菱重工業株式会社 光電変換装置
CN101840942A (zh) * 2010-05-19 2010-09-22 深圳丹邦投资集团有限公司 一种薄膜太阳电池及其制造方法

Also Published As

Publication number Publication date
US9818902B2 (en) 2017-11-14
CN103222068A (zh) 2013-07-24
KR20120086205A (ko) 2012-08-02
WO2012102449A1 (en) 2012-08-02
KR101219835B1 (ko) 2013-01-21
EP2619800A4 (en) 2018-01-17
JP2014503125A (ja) 2014-02-06
EP2619800A1 (en) 2013-07-31
EP2619800B1 (en) 2019-12-04
US20130327383A1 (en) 2013-12-12

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Granted publication date: 20160817

Termination date: 20181006