JP2014503125A - 太陽電池及びその製造方法 - Google Patents
太陽電池及びその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 230000031700 light absorption Effects 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 25
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 14
- 239000000126 substance Substances 0.000 claims abstract description 6
- 239000011701 zinc Substances 0.000 claims description 25
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 19
- 229910052725 zinc Inorganic materials 0.000 claims description 19
- 238000009792 diffusion process Methods 0.000 claims description 13
- 239000011521 glass Substances 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 12
- 239000010949 copper Substances 0.000 description 10
- 229910052733 gallium Inorganic materials 0.000 description 10
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 7
- 239000010408 film Substances 0.000 description 7
- 229910052738 indium Inorganic materials 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 238000005240 physical vapour deposition Methods 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 6
- 239000011777 magnesium Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 4
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 4
- 229910052793 cadmium Inorganic materials 0.000 description 4
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 4
- 238000003912 environmental pollution Methods 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- 239000011669 selenium Substances 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 239000005361 soda-lime glass Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- YNLHHZNOLUDEKQ-UHFFFAOYSA-N copper;selanylidenegallium Chemical compound [Cu].[Se]=[Ga] YNLHHZNOLUDEKQ-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229920005570 flexible polymer Polymers 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0725—Multiple junction or tandem solar cells
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
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Abstract
【選択図】図1
Description
Claims (14)
- 基板と、
前記基板の上に配置される裏面電極層と、
前記裏面電極層の上に配置される光吸収層と、
前記光吸収層の上に配置されるバッファ層と、
前記バッファ層の上に配置されるウィンドウ層と、を含み、
前記バッファ層は(AxZn1−x)0(0≦x≦1)の化学式で形成され、前記Aは金属元素を含むことを特徴とする、太陽電池。 - 前記バッファ層のAは2族元素を含むことを特徴とする、請求項1に記載の太陽電池。
- 前記バッファ層のAはMgであることを特徴とする、請求項1に記載の太陽電池。
- 前記xは約0.1乃至約0.5の値を有することを特徴とする、請求項1に記載の太陽電池。
- 前記バッファ層のバンドギャップは約3.3eV乃至約3.6eVの値を有することを特徴とする、請求項1に記載の太陽電池。
- 前記バッファ層は約10nm乃至約100nmの厚さで形成されることを特徴とする、請求項1に記載の太陽電池。
- 前記バッファ層と接する光吸収層領域に形成された亜鉛拡散層を含むことを特徴とする、請求項1に記載の太陽電池。
- 前記亜鉛拡散層は約2.2eV乃至約2.8eVのバンドギャップを有することを特徴とする、請求項7に記載の太陽電池。
- 前記亜鉛拡散層は約10乃至約100nmの厚さで形成されることを特徴とする、請求項7に記載の太陽電池。
- 前記基板は、ガラス、ポリマー金属のうちの少なくとも1つを含むことを特徴とする、請求項1に記載の太陽電池。
- 前記基板の上に裏面電極層を形成するステップと、
前記裏面電極層の上に光吸収層を形成するステップと、
前記光吸収層の上に(AxZn1−x)0(0≦x≦1)の化学式(Aは金属元素)を有するバッファ層を形成するステップと、
前記バッファ層の上にウィンドウ層を形成するステップと、
を含むことを特徴とする、太陽電池製造方法。 - 前記バッファ層はPVDにより形成されることを特徴とする、請求項11に記載の太陽電池製造方法。
- 前記xは約0.1乃至約0.5の値を有することを特徴とする、請求項11に記載の太陽電池製造方法。
- 前記ウィンドウ層はPVD工程で形成されることを特徴とする、請求項11に記載の太陽電池製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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KR1020110007516A KR101219835B1 (ko) | 2011-01-25 | 2011-01-25 | 태양전지 및 이의 제조방법 |
KR10-2011-0007516 | 2011-01-25 | ||
PCT/KR2011/007394 WO2012102449A1 (en) | 2011-01-25 | 2011-10-06 | Solar cell and method for manufacturing the same |
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JP2014503125A true JP2014503125A (ja) | 2014-02-06 |
JP2014503125A5 JP2014503125A5 (ja) | 2014-11-13 |
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JP2013550370A Pending JP2014503125A (ja) | 2011-01-25 | 2011-10-06 | 太陽電池及びその製造方法 |
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US (1) | US9818902B2 (ja) |
EP (1) | EP2619800B1 (ja) |
JP (1) | JP2014503125A (ja) |
KR (1) | KR101219835B1 (ja) |
CN (1) | CN103222068B (ja) |
WO (1) | WO2012102449A1 (ja) |
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CN106531827A (zh) * | 2015-09-15 | 2017-03-22 | 株式会社东芝 | 光电转换元件、太阳能电池、太阳能电池模块及太阳光发电系统 |
CN105514198B (zh) * | 2015-12-29 | 2017-03-08 | 中国科学院深圳先进技术研究院 | 薄膜太阳能电池及其缓冲层的制备方法 |
KR20170097440A (ko) * | 2016-02-18 | 2017-08-28 | 전영권 | 태양전지 및 그 제조방법 |
CN106449875A (zh) * | 2016-10-10 | 2017-02-22 | 北京四方创能光电科技有限公司 | 一种利用MgZnO薄膜制作CIGS薄膜太阳能电池的方法 |
CN108321216A (zh) * | 2018-01-30 | 2018-07-24 | 北京铂阳顶荣光伏科技有限公司 | 一种可调光学带隙的氧锌镁材料、制备方法及太阳能电池 |
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US5720827A (en) * | 1996-07-19 | 1998-02-24 | University Of Florida | Design for the fabrication of high efficiency solar cells |
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KR20080009346A (ko) * | 2006-07-24 | 2008-01-29 | 주식회사 엘지화학 | 태양전지 버퍼층의 제조방법 |
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- 2011-01-25 KR KR1020110007516A patent/KR101219835B1/ko not_active IP Right Cessation
- 2011-10-06 EP EP11856640.5A patent/EP2619800B1/en active Active
- 2011-10-06 US US13/981,781 patent/US9818902B2/en active Active
- 2011-10-06 WO PCT/KR2011/007394 patent/WO2012102449A1/en active Application Filing
- 2011-10-06 CN CN201180056408.5A patent/CN103222068B/zh not_active Expired - Fee Related
- 2011-10-06 JP JP2013550370A patent/JP2014503125A/ja active Pending
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Also Published As
Publication number | Publication date |
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CN103222068B (zh) | 2016-08-17 |
EP2619800A1 (en) | 2013-07-31 |
US20130327383A1 (en) | 2013-12-12 |
WO2012102449A1 (en) | 2012-08-02 |
US9818902B2 (en) | 2017-11-14 |
KR101219835B1 (ko) | 2013-01-21 |
KR20120086205A (ko) | 2012-08-02 |
CN103222068A (zh) | 2013-07-24 |
EP2619800B1 (en) | 2019-12-04 |
EP2619800A4 (en) | 2018-01-17 |
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