JP2006332440A - Cis系薄膜太陽電池の高抵抗バッファ層・窓層(透明導電膜)連続製膜方法及び製膜装置 - Google Patents
Cis系薄膜太陽電池の高抵抗バッファ層・窓層(透明導電膜)連続製膜方法及び製膜装置 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 96
- 239000010408 film Substances 0.000 title claims description 182
- 239000010409 thin film Substances 0.000 title claims description 76
- 239000000758 substrate Substances 0.000 claims abstract description 82
- 239000002994 raw material Substances 0.000 claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 21
- 239000011521 glass Substances 0.000 claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 claims abstract description 16
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 36
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 claims description 33
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 30
- 230000031700 light absorption Effects 0.000 claims description 29
- 239000011261 inert gas Substances 0.000 claims description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 18
- 239000011701 zinc Substances 0.000 claims description 16
- 239000011787 zinc oxide Substances 0.000 claims description 16
- 229910052786 argon Inorganic materials 0.000 claims description 15
- 239000001307 helium Substances 0.000 claims description 15
- 229910052734 helium Inorganic materials 0.000 claims description 15
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 15
- 229910052725 zinc Inorganic materials 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- 239000011265 semifinished product Substances 0.000 claims description 12
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 11
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 10
- 229910052796 boron Inorganic materials 0.000 claims description 10
- 239000012159 carrier gas Substances 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 10
- 239000002019 doping agent Substances 0.000 claims description 9
- 150000002902 organometallic compounds Chemical class 0.000 claims description 9
- 238000009751 slip forming Methods 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 7
- UGZADUVQMDAIAO-UHFFFAOYSA-L zinc hydroxide Chemical compound [OH-].[OH-].[Zn+2] UGZADUVQMDAIAO-UHFFFAOYSA-L 0.000 claims description 6
- 229940007718 zinc hydroxide Drugs 0.000 claims description 6
- 229910021511 zinc hydroxide Inorganic materials 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052951 chalcopyrite Inorganic materials 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 230000000737 periodic effect Effects 0.000 claims description 5
- -1 zinc organometallic compound Chemical class 0.000 claims description 5
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 claims description 4
- 238000002834 transmittance Methods 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 239000000047 product Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 239000002699 waste material Substances 0.000 abstract description 10
- 238000010521 absorption reaction Methods 0.000 abstract description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 abstract 2
- 230000003287 optical effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 228
- 240000002329 Inga feuillei Species 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 9
- 239000002344 surface layer Substances 0.000 description 9
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 8
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 8
- 238000001291 vacuum drying Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 150000003346 selenoethers Chemical class 0.000 description 4
- 229910052717 sulfur Inorganic materials 0.000 description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/305—Sulfides, selenides, or tellurides
- C23C16/306—AII BVI compounds, where A is Zn, Cd or Hg and B is S, Se or Te
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
【解決手段】 ガラス基板1A上に金属裏面電極層1B、光吸収層1Cの順に製膜した太陽電池半製品基板の光吸収層1C上に、高抵抗バッファ層1D、窓層1Eの順序でMOCVD法により連続的に積層構造で製膜するので、製膜方法及び装置が簡素化され、原材料費及び廃棄物処理費を削減することができる。
【選択図】 図1
Description
本発明は、CIS系薄膜太陽電池の高抵抗バッファ層・窓層(透明導電膜)連続製膜方法及び連続製膜装置に関する。
前記CIS系薄膜太陽電池は、CIS系薄膜太陽電池は、図7に示すように、ガラス基板1A(厚さ1〜3mm)、金属裏面電極層1B(厚さ1〜2μmのモリブデン、チタン等の金属)、p形CIS系光吸収層1C、高抵抗バッファ層1D、n形窓層(透明導電膜)1Eの順に積層されたサブストレート構造のpnヘテロ接合デバイスである。前記光吸収層は、p形の導電性を有するCu−III −VI2 族カルコパイライト構造の厚さ1〜3μmの薄膜であり、例えば、CuInSe2 、Cu(InGa)Se2 、Cu(InGa)(SSe)2 等の多元化合物半導体薄膜である。
前記高抵抗バッファ層・窓層(透明導電膜)連続製膜方法は、ガラス基板1A上に金属裏面電極層1B、光吸収層1Cの順に製膜された太陽電池半製品付加基板A(以下、基板という。)上にMOCVD法により高抵抗バッファ層1D及び窓層(透明導電膜)1Eを連続して製膜する方法である。高抵抗バッファ層1Dは透明且つ高抵抗(104 Ω・cm以上)で真性の酸化亜鉛薄膜であり、窓層(透明導電膜)1Eはn形の導電性を有する禁制帯幅が広く、透明且つ低抵抗で厚さ0.5〜2.5μmの酸化亜鉛からなる半導体薄膜である。
図1(a)に示すように、前記ガラス基板1A上に金属裏面電極層1B、光吸収層1Cの順に製膜した太陽電池半製品基板Aの光吸収層1C上に、前記バッファ層1D、前記窓層1Eの順序で連続的に積層構造で製膜する連続製膜方法である。
前記連続製膜方法は、前記バッファ層1D及び前記窓層1Eを有機金属化学的気相成長(MOCVD)法により、複数の予備加熱工程と製膜工程がインライン式に接続した製造方法(構造のMOCVD製膜装置内)で連続的に製膜する。
前記高抵抗バッファ層・窓層(透明導電膜)連続製膜装置2は、ガラス基板1A上に金属裏面電極層1B、光吸収層1Cの順に製膜された太陽電池半製品基板(以下、基板という。)上にMOCVD法により高抵抗バッファ層及び窓層(透明導電膜)を連続して製膜する装置であり、図2に示すように、太陽電池半製品基板を導入する基板導入部3、前記太陽電池半製品基板を予備加熱する予備加熱室4、前記予備加熱された太陽電池半製品基板上に高抵抗バッファ層を製膜する高抵抗バッファ層製膜室5、前記高抵抗バッファ層が製膜された太陽電池半製品基板を乾燥且つ予備加熱する真空乾燥室兼予備加熱室6、前記乾燥且つ予備加熱された太陽電池半製品基板上に窓層を製膜する窓層製膜室7、前記バッファ層及び窓層が製膜された太陽電池半製品基板を冷却する冷却室8及び前記バッファ層及び窓層が製膜された太陽電池半製品を取り出す基板取り出し部9からなる。
前記高抵抗バッファ層1Dの製膜は、バッファ層製膜室5の前室の予備加熱室4で、メカニカルブースター付真空ポンプPにより、10-3Torrまでの真空中で、100〜200℃の温度範囲、望ましくは、120〜160℃に加熱し、その温度に到達後直ちに、120〜160℃の温度範囲に保持されたバッファ層製膜室5に搬送し、ここで、ジエチル亜鉛と純水を製膜原料として、DEZ/H2 Oモル比0.5〜0.9の微量な水酸化亜鉛を含んだ膜厚2〜50nmの範囲のZnO薄膜を製膜する。
1A ガラス基板
1B 金属裏面電極層
1C 光吸収層
1D 高抵抗バッファ層
1E 窓層(透明導電膜)
A 太陽電池半製品(複層付加基板)
2 高抵抗バッファ層・窓層(透明導電膜)連続製膜装置
3 基板導入部
4 予備加熱室
5 高抵抗バッファ層製膜室
6 真空乾燥室兼予備加熱室
7 窓層製膜室
8 冷却室
9 基板取り出し部
H ヒーター
HP ホットプレート
P 真空ポンプ
V バルブ
Claims (12)
- ガラス基板、金属裏面電極層、p形の導電性を有しCIS系(CuInSe2 系)カルコパイライト多元化合物半導体薄膜からなる光吸収層、透明で高抵抗の亜鉛混晶化合物半導体薄膜からなるバッファ層、n形の導電性を有し透明で低抵抗の酸化亜鉛(ZnO)系透明導電膜からなる窓層の順に積層されたサブストレート構造のpnヘテロ接合デバイスであるCIS系薄膜太陽電池の製造方法において、前記ガラス基板上に金属裏面電極層、光吸収層の順に製膜した太陽電池半製品基板の光吸収層上に、前記バッファ層、前記窓層の順序で連続的に積層構造で製膜することを特徴とするCIS系薄膜太陽電池の高抵抗バッファ層・窓層(透明導電膜)連続製膜方法。
- 前記バッファ層及び前記窓層を、有機金属化学的気相成長(MOCVD)法により、複数の予備加熱工程と製膜工程がインライン式に接続した構造のMOCVD製膜装置内で連続的に製膜することを特徴とする前記請求項1に記載のCIS系薄膜太陽電池の高抵抗バッファ層・窓層(透明導電膜)連続製膜方法。
- 前記バッファ層及び前記窓層を夫々、同一のMOCVD製膜装置内で隣接、且つ独立したバッファ層製膜工程と窓層製膜工程で連続的に製膜することを特徴とする前記請求項1に記載のCIS系薄膜太陽電池の高抵抗バッファ層・窓層(透明導電膜)連続製膜方法。
- 前記バッファ層及び前記窓層の製膜工程は、亜鉛の有機金属化合物と純水を製膜原料とし、これらをバブラー等に充填し、ヘリウム、アルゴン等の不活性ガスをバブラー内に通すキャリアガスとして使用し、MOCVD法により製膜することを特徴とする前記請求項2又は3に記載のCIS系薄膜太陽電池の高抵抗バッファ層・窓層(透明導電膜)連続製膜方法。
- 前記窓層の製膜工程は、亜鉛の有機金属化合物と純水(H2 O)を製膜原料とし、これらをバブラー等に充填し、ヘリウム、アルゴン等の不活性ガスをバブラー内に通すキャリアガスとして使用し、抵抗率を調整するために、周期律表のIII 族元素、例えば、ボロン、アルミニウム、インジウム、ガリウムの何れか1つ又はこれらの組合せ、をドーパントとして使用するMOCVD法により製膜することを特徴とする前記請求項2又は3に記載のCIS系薄膜太陽電池の高抵抗バッファ層・窓層(透明導電膜)連続製膜方法。
- 前記亜鉛の有機金属化合物は、ジメチル亜鉛、ジエチル亜鉛であり、望ましくは、ジエチル亜鉛(DEZ)であり、これをバブラー内に充填し、ヘリウム、アルゴン等の不活性ガスをそこで泡立てて、同伴させて、前記窓層の製膜工程におけるMOCVD製膜装置内へ供給することを特徴とする前記請求項4又は5に記載のCIS系薄膜太陽電池の高抵抗バッファ層・窓層(透明導電膜)連続製膜方法。
- 前記抵抗率を調整するために使用する前記請求項5に記載のドーパントは、水素化又は有機金属化合物として製造された気体又は揮発性(又は蒸気圧の高い)液体であり、その各々をヘリウム、アルゴン等の不活性ガスで希釈し、製造原料を同伴するキャリアガスと混合させて、前記窓層の製膜工程におけるMOCVD製膜装置内へ供給することを特徴とするCIS系薄膜太陽電池の高抵抗バッファ層・窓層(透明導電膜)連続製膜方法。
- 前記バッファ層は、バッファ層製膜工程の前工程の予備加熱工程で、10-3Torrまでの真空中で、100〜200℃の温度範囲、望ましくは、120〜160℃に加熱し、その温度に到達後直ちに、120〜160℃の温度範囲に保持されたバッファ層製膜工程に搬送し、バッファ層製膜工程で、ジエチル亜鉛と純水を製膜原料として、0.5〜0.7DEZ/H2 Oモル比の微量な水酸化亜鉛を含んだ膜厚2〜50nmの範囲のZnO薄膜を製膜することを特徴とする前記請求項1乃至4の何れか1つに記載のCIS系薄膜太陽電池の高抵抗バッファ層・窓層(透明導電膜)連続製膜方法。
- 前記窓層は、窓層製膜工程の前工程の予備加熱工程で、10-3Torrまでの真空中で、基板を140〜250℃の温度範囲、望ましくは、160〜190℃に加熱し、その温度に到達後直ちに、160〜190℃の温度範囲に保持された窓層製膜工程に搬送し、窓層製膜工程で、ジエチル亜鉛と純水を製膜原料として、不活性ガスで1〜5Vol%の濃度に希釈されたジボランガスを原料配管内に供給し、ジボランからのボロンをドーピングすることにより、シート抵抗が10Ω/以下、透過率が85%以上、膜厚が0.5〜2.5μmの範囲の、望ましくは、1〜1.5μmの範囲の低抵抗のZnO系透明導電膜を製膜することを特徴とする前記請求項1乃至5の何れか1つに記載のCIS系薄膜太陽電池の高抵抗バッファ層・窓層(透明導電膜)連続製膜方法。
- ガラス基板、金属裏面電極層、p形の導電性を有しCIS系(CuInSe2 系)カルコパイライト多元化合物半導体薄膜からなる光吸収層、透明で高抵抗の亜鉛混晶化合物半導体薄膜からなるバッファ層、n形の導電性を有し透明で低抵抗の酸化亜鉛(ZnO)系透明導電膜からなる窓層の順に積層されたサブストレート構造のpnヘテロ接合デバイスであるCIS系薄膜太陽電池の高抵抗バッファ層・窓層(透明導電膜)連続製膜装置であって、前記ガラス基板上に金属裏面電極層、光吸収層の順に製膜した太陽電池半製品基板の光吸収層上に、前記バッファ層、前記窓層の順序でMOCVD法により連続的に積層構造で製膜するもので、太陽電池半製品基板を導入する基板導入部、前記太陽電池半製品基板を予備加熱する予備加熱室、前記予備加熱された太陽電池半製品基板上に高抵抗バッファ層を製膜する高抵抗バッファ層製膜室、前記高抵抗バッファ層が製膜された太陽電池半製品基板を乾燥且つ予備加熱する真空乾燥室兼予備加熱室、前記乾燥且つ予備加熱された太陽電池半製品基板上に窓層を製膜する窓層製膜室、前記バッファ層及び窓層が製膜された太陽電池半製品基板を冷却する冷却室及び前記バッファ層及び窓層が製膜された太陽電池半製品を取り出す基板取り出し部からなることを特徴とするCIS系薄膜太陽電池の高抵抗バッファ層・窓層(透明導電膜)連続製膜装置)。
- 前記高抵抗バッファ層製膜室は、ジエチル亜鉛と純水を製膜原料として、これらをバブラー等に充填し、ヘリウム、アルゴン等の不活性ガスをバブラー内に通すキャリアガスとして使用し、加熱した太陽電池半製品基板上に供給することで0.5〜0.7DEZ/H2 Oモル比の微量な水酸化亜鉛を含んだ膜厚2〜50nmの範囲のZnO薄膜を、MOCVD法により製膜することを特徴とする請求項10に記載のCIS系薄膜太陽電池の高抵抗バッファ層・窓層(透明導電膜)連続製膜装置。
- 前記窓層製膜室は、亜鉛の有機金属化合物と純水を製膜原料とし、これらをバブラー等に充填し、ヘリウム、アルゴン等の不活性ガスをバブラー内に通すキャリアガスとして使用し、抵抗率を調整するために、周期律表のIII 族元素、例えば、ボロン、アルミニウム、インジウム、ガリウムの何れか1つ又はこれらの組合せ、を前記請求項7記載の方法でドーパントとして使用し、MOCVD法によりZnO系透明導電膜を製膜することを特徴とする請求項10に記載のCIS系薄膜太陽電池の高抵抗バッファ層・窓層(透明導電膜)連続製膜装置。
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Also Published As
Publication number | Publication date |
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CN101213674A (zh) | 2008-07-02 |
WO2006126598A1 (ja) | 2006-11-30 |
US8093096B2 (en) | 2012-01-10 |
KR20080033157A (ko) | 2008-04-16 |
CN100546051C (zh) | 2009-09-30 |
JP4841173B2 (ja) | 2011-12-21 |
EP1898469A4 (en) | 2016-12-28 |
KR101274660B1 (ko) | 2013-06-14 |
EP1898469A1 (en) | 2008-03-12 |
US20090087940A1 (en) | 2009-04-02 |
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