CN103620794B - 太阳能电池及其制造方法 - Google Patents

太阳能电池及其制造方法 Download PDF

Info

Publication number
CN103620794B
CN103620794B CN201280028352.7A CN201280028352A CN103620794B CN 103620794 B CN103620794 B CN 103620794B CN 201280028352 A CN201280028352 A CN 201280028352A CN 103620794 B CN103620794 B CN 103620794B
Authority
CN
China
Prior art keywords
layer
substrate
solaode
barrier layer
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201280028352.7A
Other languages
English (en)
Other versions
CN103620794A (zh
Inventor
崔撤焕
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of CN103620794A publication Critical patent/CN103620794A/zh
Application granted granted Critical
Publication of CN103620794B publication Critical patent/CN103620794B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
    • H01L31/03928—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate including AIBIIICVI compound, e.g. CIS, CIGS deposited on metal or polymer foils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
  • Photovoltaic Devices (AREA)

Abstract

根据实施例的一种太阳能电池，包括：基板；在所述基板上的具有纳米棒结构的阻挡层；布置在所述阻挡层上的背电极层；布置在所述背电极层上的吸光层；布置在所述吸光层上的缓冲层；以及布置在所述缓冲层上的窗口层。

Description

太阳能电池及其制造方法
技术领域
本发明涉及一种太阳能电池以及其制作方法。
背景技术
由于近来能源需求量增加，将太阳能转换成电能的太阳能电池技术的研发一直在进行。
尤其是，一种铜铟镓硒（CIGS）基太阳能电池如今正在广泛使用，即，一种pn异质结器件，其具有包括玻璃基板的基板结构、金属背电极层、p型CIGS基吸光层、高电阻缓冲层和n型窗口层。
对于能够防止杂质在太阳能电池衬底中扩散的阻挡层，各种研究仍在进行。
发明内容
技术问题
本发明提供了一种可以提高可靠性和生产率的太阳能电池及其制造方法。
解决方法
根据实施例的太阳能电池，包括：基板；在所述基板上的纳米棒结构阻挡层；布置在所述阻挡层上的背电极层；布置在所述背电极层上的吸光层；布置在所述吸光层上的缓冲层；以及布置在所述缓冲层上的窗口层。
有益效果
根据实施例，纳米棒结构阻挡层可以有效防止杂质扩散到所述吸光层。此外，所述阻挡层比现存阻挡层厚度要小，因此可以使得太阳能电池生产率增长。
附图说明
图1为图示根据实施例的太阳能电池的截面图；
图2为典型阻挡层的剖面图；
图3至图6为图示根据实施例的太阳能电池制造方法的视图；
图7为图示根据本发明的关于纳米棒和纳米线生长的反应器结构的剖面图。
具体实施方式
在实施例的描述中，当基板、层、膜或电极被称作在另一个基板、层、膜或电极的上或下时，可以理解成直接位于另一层或基板的上或下，或者其中也有可能存在介入层。进一步，关于各个组成层的上下关系将参照附图来给出。此外，为了进一步理解本发明，元件的尺寸和元件间的尺寸可能会被放大。
图1为图示根据实施例的太阳能电池的截面图。参看图1，太阳能电池板包括：基板100、阻挡层200、背电极层300、吸光层400、缓冲层500、高电阻缓冲层600以及窗口层700。
基板100为板状并且支撑着阻挡层200、背电极层300、吸光层400、缓冲层500、高电阻缓冲层600以及窗口层700。
基板100可以是电绝缘体。它可以由玻璃、塑料或金属制成。或者，基板100可以由陶瓷，金属（例如，铜）箔、SUS不锈钢和有弹性的聚合物制成。基板100可以是透明的，刚性的或柔性的。
阻挡层200形成在基板100上。阻挡层200能够防止基板100上的杂质向上扩散。
图2是典型阻挡层200的剖面图。为了有效地防止基板100上的杂质向上扩散，诸如氧化物（例如，Al2O3、SiO2）或者金属（例如，Cr、Ti）的材料被沉积为2μm或以上的厚度以形成典型阻挡层200。这样看来，生产成本和生产时间具有改善的潜力。
而且，典型阻挡层200在朝着C轴，即垂直生长方向生长，呈柱状，这样一来，杂质可能会通过形成为柱状的阻挡层内的界面220向上扩散。因此，在阻挡层的效率上具有改善的潜力。
为了解决这些问题，本发明提供了一种纳米棒结构阻挡层。该纳米棒结构阻挡层200可以包含氧化锌（ZnO）。该纳米棒是在水平方向生长的。
阻挡层200的厚度在约0.5μm到约1μm之间。
氧化锌是一种二元氧化物半导体，为六方晶系纤维锌矿晶体结构，是直接跃迁的III-V族化合物半导体材料，具有3.37eV的宽能带隙，在室温下具有很大的激子结合能。
通过使用在太阳能电池的基板上水平方向形成的纳米棒结构阻挡层，能够有效地防止基板上的杂质向上扩散，因此提高器件的可靠性。
此外，如上所述，阻挡层200提高了效率，减小了厚度，从而提高了生产率。
氧化锌（ZnO）纳米棒可以通过多种方法制造，例如使用阳极氧化铝模板的方法、固液气（Vapor Liquid Solid）方法、固液气生长方法、MOVPE生长方法、CVD，以及使用对金属化的锌进行蒸发所生成的蒸气或对氧化锌还原所生成的锌蒸气的生长方法。
背电极层300布置在阻挡层200上。背电极层300是导电层。背电极层300可以使由太阳能电池的吸光层400生成的电荷移到太阳能电池外。也就是说，电流是通过背电极层300流出太阳能电池的。为了实现此功能，背电极层300必须具有高电导率，即低电阻率。
同时，在伴随有CIGS化合物形成的在硫（S）或硒（Se）氛围中的热处理过程中，背电极层300应当具有高温稳定性。此外，背电极层300具有与基板100的很好的结合力，因此可以避免出现背电极层300与基板100因热膨胀系数不同而发生脱层。
背电极层300可以由钼（Mo）、金（Au）、铝（Al）、铬（Cr）、钨（W）和铜（Cu）中任意一种元素形成。具体来说，钼（Mo）与基板100之间的热膨胀系数差小于其他化学元素与基板100的热膨胀系数差，因此元素钼（Mo）有更好的结合力，进而防止了脱层并很好地满足了背电极层300所需的性能。
背电极层300可能包括两层或两层以上。在此情况下，这些层可以分别由同一种金属或不同的金属构成。
吸光层400形成在背电极层300上。该吸光层400包含p型半导体化合物。更具体地，吸光层400包含Ⅰ-Ⅲ-Ⅳ族化合物。例如，吸光层400可能具有铜铟镓硒基（Cu(In,Ga)Se2；CIGS基）晶体结构，铜铟硒基晶体结构，或是铜镓硒基晶体结构。吸光层400可以具有从约1.1eV到约1.2eV之间的能带隙。
缓冲层500布置在吸光层400上。具有CIGS化合物吸光层400的太阳能电池具有在CIGS化合物薄膜p型半导体与透明电极层薄膜n型半导体之间的pn结。但是，由于这两种材料有着非常不同的晶格常数和能带隙，在这两种材料之间需要缓冲层来实现良好的结。
缓冲层500是由CdS和ZnS形成的，并且对于太阳能电池来说，CdS在电力转换效率上效果更佳。缓冲层500的能带隙在约2.2eV到约2.5eV之间。
高电阻缓冲层600布置在缓冲层500上。高电阻缓冲层600包含不掺杂质的氧化锌（i-ZnO）。高电阻缓冲层600的能带隙在约3.1eV到约3.3eV之间。
窗口层700布置在高电阻缓冲层600上。窗口层700是透明的导电层。窗口层700的电阻高于背电极层300的电阻。
窗口层700包含氧化物。例如，该窗口层700可以包含氧化锌，铟锡氧化物（ITO），或是铟锌氧化物（IZO）。
另外，窗口层700可以包含掺有铝的氧化锌（AZO），或是掺有镓的氧化锌（GZO）。
根据本发明的实施例，纳米棒结构的阻挡层200能防止杂质从基板100扩散到吸光层400，并且该阻挡层相对较薄，因此可以提高太阳能电池的生产率。
图3至图6为示出根据实施例的太阳能电池的制造方法的剖面图。该方法的描述涉及到之前对该太阳能电池的描述。制造方法的说明可以结合之前对太阳能电池的说明来理解。
参看图3，阻挡层200可以在基板100上形成。基板100可以是柔性的。
阻挡层200可以具有纳米棒结构，且其厚度可以为约0.5μm到约1μm。每根纳米棒的宽度（a）与长度（b）之比可以为10≤a/b≤1000，长度（b）的范围为约10nm到约100nm。
图7为示出根据本发明的关于纳米棒和纳米线生长的反应器结构的剖面图。
使具有氧化锌纳米棒和纳米线结构的阻挡层200生长，方法为：把锌原料①和基板③间隔开，置于支撑盘②上；以约300℃至约600℃的温度加热反应器⑤内部以使锌原料①挥发成气态；使含有杂质的反应气体在水平方向④流入反应器中以将一些锌气体转化成氧化锌气体，以及将锌气体或氧化锌气体吸收到基板③上以进行扩散和沉积。
加热温度是控制锌挥发的重要因素。高温加热可以使锌更好地挥发并增加气态锌的动能，进而增加它的移动速度和移动距离。因此，当加热温度增高时，各个纳米棒的宽度（a）和长度（b）之比会增加。
参看图4，阻挡层200可以形成在背电极层300上。背电极层300可以使用钼来沉积。背电极层300可以通过物理气相沉积（PVD）或电镀的方法来形成。
此外，扩散阻挡膜可以布置在基板100与背电极层300之间。
然后，可以在背电极层300上形成吸光层400。同时或分别地蒸发铜、铟、镓和硒的方法以及先形成金属前体膜然后再使用硒化工艺的方法被广泛用于形成铜铟镓硒基（Cu(In,Ga)Se2；CIGS基）半导体的吸光层400。
更详言之，在使用铜靶，铟靶和镓靶的溅镀工艺中将金属前体膜形成在背电极层200上。
然后，对该金属前体膜执行硒化工艺以形成铜铟镓硒基（Cu(In,Ga)Se2；CIGS基）半导体化合物的吸光层400。
或者，使用铜靶，铟靶和镓靶的溅镀工艺与硒化工艺可以同时进行。
或者，可以执行使用铜靶和铟靶的溅镀工艺或使用铜靶和镓靶的溅镀工艺连同硒化工艺一起，来形成CIS或CIG基半导体化合物的吸光层400。
参看图5，通过溅镀工艺或化学浴沉积（CBD）方法将硫化镉沉积在吸光层400上以形成缓冲层400。
然后，通过溅镀工艺将氧化锌沉积在缓冲层400上以形成高电阻缓冲层600。
缓冲层400和高电阻缓冲层600的厚度较小。例如，缓冲层400和高电阻缓冲层600可以具有约1nm到约80nm的厚度。
参看图6，窗口层700形成在高电阻缓冲层600上。透明导电材料沉积在高电阻缓冲层600上以形成窗口层700。
上述实施例中的特征、结构和效应并入到本发明的至少一个实施例中，而并非仅限于一个实施例。另外，本领域的技术人员可以容易地将在一个实施例中例示的特征、结构和效应在另一个实施例中进行组合和修改。因此，这些组合和修改应被理解为落入本发明的范围内。
尽管已经参考了本发明的数个实施例描述了本发明，但是应理解，本领域的技术人员能够构思出落入本发明原理的精神和范围内的众多其他修改和实施例。更具体地，在本说明书、附图和所附权利要求书范围内的主题组合布置的组成部分和/或布置中各种变化和修改是可能的。除了在组成部分和/或布置中的变化和修改之外，替代使用对于本领域的技术人员也是显然的。

Claims (7)

1.一种太阳能电池，包括：
基板；
所述基板上的阻挡层，所述阻挡层具有在所述基板上水平地形成的纳米棒结构；
布置在所述阻挡层上的背电极层；
布置在所述背电极层上的吸光层；
布置在所述吸光层上的缓冲层；以及
布置在所述缓冲层上的窗口层。
2.根据权利要求1所述的太阳能电池，其中所述阻挡层的厚度形成为0.5μm至1μm。
3.根据权利要求1所述的太阳能电池，其中所述纳米棒中的每一个具有10≤a/b≤1000的宽度a与长度b之比。
4.根据权利要求3所述的太阳能电池，其中所述纳米棒中的每一个具有从10nm到100nm的所述长度b。
5.根据权利要求1所述的太阳能电池，其中所述阻挡层包含氧化锌。
6.根据权利要求1所述的太阳能电池，其中所述基板是金属薄膜基板。
7.根据权利要求6所述的太阳能电池，其中所述基板是不锈钢。
CN201280028352.7A 2011-04-08 2012-04-06 太阳能电池及其制造方法 Expired - Fee Related CN103620794B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020110032960A KR101154774B1 (ko) 2011-04-08 2011-04-08 태양전지 및 이의 제조방법
KR10-2011-0032960 2011-04-08
PCT/KR2012/002658 WO2012138194A2 (en) 2011-04-08 2012-04-06 Solar cell and manufacturing method thereof

Publications (2)

Publication Number Publication Date
CN103620794A CN103620794A (zh) 2014-03-05
CN103620794B true CN103620794B (zh) 2016-10-12

Family

ID=46688846

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280028352.7A Expired - Fee Related CN103620794B (zh) 2011-04-08 2012-04-06 太阳能电池及其制造方法

Country Status (5)

Country Link
US (1) US9735294B2 (zh)
EP (1) EP2695200B1 (zh)
KR (1) KR101154774B1 (zh)
CN (1) CN103620794B (zh)
WO (1) WO2012138194A2 (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI436490B (zh) * 2010-09-03 2014-05-01 Univ Tatung 光伏電池結構
KR101189340B1 (ko) 2011-10-13 2012-10-09 엘지이노텍 주식회사 태양전지 및 이의 제조방법
KR101327105B1 (ko) 2011-12-09 2013-11-07 엘지이노텍 주식회사 태양전지 및 이의 제조방법
CN105449010B (zh) * 2015-11-18 2018-07-31 北京四方创能光电科技有限公司 不锈钢衬底柔性铜铟镓硒薄膜太阳电池阻挡层制备方法
CN105762232A (zh) * 2016-04-13 2016-07-13 黄广明 一种柔性cigs薄膜太阳电池的制备方法
US10141469B1 (en) * 2016-10-17 2018-11-27 Stc.Unm Radially stacked solar cells based on 2D atomic crystals and methods for their production
CN107994079A (zh) * 2017-08-11 2018-05-04 北京汉能光伏投资有限公司 柔性薄膜电池及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101093863A (zh) * 2007-06-12 2007-12-26 南开大学 ZnO为电绝缘与杂质阻挡层的薄膜太阳电池及其制备方法
CN101908565A (zh) * 2009-06-02 2010-12-08 精工爱普生株式会社 太阳电池及其制造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004079301A (ja) * 2002-08-14 2004-03-11 Fuji Photo Film Co Ltd 発光素子およびその製造方法
KR100561702B1 (ko) * 2004-01-30 2006-03-17 한국과학기술연구원 기상증착법을 이용한 산화아연 나노로드 및 나노와이어의제조방법
EP1749309A2 (en) 2004-03-15 2007-02-07 Bulent M. Basol Technique and apparatus for depositing thin layers of semiconductors for solar cell fabricaton
US7732229B2 (en) 2004-09-18 2010-06-08 Nanosolar, Inc. Formation of solar cells with conductive barrier layers and foil substrates
JP2010507909A (ja) * 2006-10-19 2010-03-11 ソロパワー、インコーポレイテッド 光起電性フィルムの製造のためのロールツーロール電気めっき
US20080302413A1 (en) * 2007-03-30 2008-12-11 Craig Leidholm Formation of photovoltaic absorber layers on foil substrates
DE102007050288A1 (de) 2007-10-18 2009-04-23 Otto Hauser Halbleiterbauteil
FR2922886B1 (fr) 2007-10-25 2010-10-29 Saint Gobain Substrat verrier revetu de couches a resistivite amelioree.
US20090133751A1 (en) 2007-11-28 2009-05-28 Molecular Imprints, Inc. Nanostructured Organic Solar Cells
EP2546887A1 (en) * 2010-03-12 2013-01-16 Sharp Kabushiki Kaisha Optical power generation element and multi-junction thin film solar cell
KR101325646B1 (ko) * 2010-09-16 2013-11-20 한국전자통신연구원 태양전지 및 그 형성방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101093863A (zh) * 2007-06-12 2007-12-26 南开大学 ZnO为电绝缘与杂质阻挡层的薄膜太阳电池及其制备方法
CN101908565A (zh) * 2009-06-02 2010-12-08 精工爱普生株式会社 太阳电池及其制造方法

Also Published As

Publication number Publication date
WO2012138194A3 (en) 2013-01-10
EP2695200A2 (en) 2014-02-12
WO2012138194A2 (en) 2012-10-11
KR101154774B1 (ko) 2012-06-18
CN103620794A (zh) 2014-03-05
EP2695200A4 (en) 2014-12-17
US20140026958A1 (en) 2014-01-30
EP2695200B1 (en) 2019-02-27
US9735294B2 (en) 2017-08-15

Similar Documents

Publication Publication Date Title
CN103620794B (zh) 太阳能电池及其制造方法
Saji et al. CIGS thin film solar cells by electrodeposition
US7854963B2 (en) Method and apparatus for controlling composition profile of copper indium gallium chalcogenide layers
CN104011875B (zh) 太阳能电池及其制造方法
CN103718308A (zh) 太阳能电池设备及其制造方法
CN104272469B (zh) 太阳能电池装置及其制造方法
KR20100109315A (ko) 태양전지 및 이의 제조방법
KR101283183B1 (ko) 태양전지 및 이의 제조방법
US20140291147A1 (en) Target materials for fabricating solar cells
CN103222068A (zh) 太阳能电池及其制造方法
CN103339741B (zh) 太阳能电池设备及其制造方法
JP5421752B2 (ja) 化合物半導体太陽電池
JP2014503128A (ja) 太陽電池及びその製造方法
CN105789353B (zh) 具有掺杂缓冲层的太阳能电池和制造太阳能电池的方法
CN103477443B (zh) 太阳能电池及其制造方法
KR101349505B1 (ko) 태양전지 및 이의 제조방법
US20200343393A1 (en) Alkali metal-incorporated chalcopyrite compound-based thin film and method of fabricating the same
KR20190010483A (ko) Cigs 박막 태양전지의 제조방법 및 이의 방법으로 제조된 cigs 박막 태양전지
CN103597613A (zh) 太阳能电池及其制造方法
KR101160487B1 (ko) 후막형 ｃｉｇｓ 태양전지 및 그 제조방법
CN104285303B (zh) 太阳能电池及其制造方法
KR101428147B1 (ko) 태양광 발전장치 및 이의 제조방법
KR101273093B1 (ko) 태양전지 및 이의 제조방법
JP2015164164A (ja) 光電変換素子および太陽電池
KR101273174B1 (ko) 태양전지 및 이의 제조방법

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20161012

Termination date: 20180406

CF01 Termination of patent right due to non-payment of annual fee