CN103477443B - 太阳能电池及其制造方法 - Google Patents
太阳能电池及其制造方法 Download PDFInfo
- Publication number
- CN103477443B CN103477443B CN201280015572.6A CN201280015572A CN103477443B CN 103477443 B CN103477443 B CN 103477443B CN 201280015572 A CN201280015572 A CN 201280015572A CN 103477443 B CN103477443 B CN 103477443B
- Authority
- CN
- China
- Prior art keywords
- plane
- electrode layer
- transparent electrode
- solaode
- light absorbing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 230000031700 light absorption Effects 0.000 abstract 2
- 238000000034 method Methods 0.000 description 25
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- 239000011669 selenium Substances 0.000 description 8
- 239000010949 copper Substances 0.000 description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 6
- 230000009466 transformation Effects 0.000 description 6
- 150000001875 compounds Chemical group 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000011787 zinc oxide Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 239000005361 soda-lime glass Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000224 chemical solution deposition Methods 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000000994 depressogenic effect Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 235000011149 sulphuric acid Nutrition 0.000 description 2
- 239000001117 sulphuric acid Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- -1 Aluminum tin-oxide Chemical compound 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910017612 Cu(In,Ga)Se2 Inorganic materials 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- NPNMHHNXCILFEF-UHFFFAOYSA-N [F].[Sn]=O Chemical compound [F].[Sn]=O NPNMHHNXCILFEF-UHFFFAOYSA-N 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920005570 flexible polymer Polymers 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- UDKYUQZDRMRDOR-UHFFFAOYSA-N tungsten Chemical compound [W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W] UDKYUQZDRMRDOR-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 235000012773 waffles Nutrition 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- A—HUMAN NECESSITIES
- A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
- A01G—HORTICULTURE; CULTIVATION OF VEGETABLES, FLOWERS, RICE, FRUIT, VINES, HOPS OR SEAWEED; FORESTRY; WATERING
- A01G9/00—Cultivation in receptacles, forcing-frames or greenhouses; Edging for beds, lawn or the like
- A01G9/02—Receptacles, e.g. flower-pots or boxes; Glasses for cultivating flowers
-
- A—HUMAN NECESSITIES
- A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
- A01G—HORTICULTURE; CULTIVATION OF VEGETABLES, FLOWERS, RICE, FRUIT, VINES, HOPS OR SEAWEED; FORESTRY; WATERING
- A01G27/00—Self-acting watering devices, e.g. for flower-pots
- A01G27/04—Self-acting watering devices, e.g. for flower-pots using wicks or the like
- A01G27/06—Self-acting watering devices, e.g. for flower-pots using wicks or the like having a water reservoir, the main part thereof being located wholly around or directly beside the growth substrate
-
- A—HUMAN NECESSITIES
- A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
- A01G—HORTICULTURE; CULTIVATION OF VEGETABLES, FLOWERS, RICE, FRUIT, VINES, HOPS OR SEAWEED; FORESTRY; WATERING
- A01G29/00—Root feeders; Injecting fertilisers into the roots
-
- A—HUMAN NECESSITIES
- A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
- A01G—HORTICULTURE; CULTIVATION OF VEGETABLES, FLOWERS, RICE, FRUIT, VINES, HOPS OR SEAWEED; FORESTRY; WATERING
- A01G9/00—Cultivation in receptacles, forcing-frames or greenhouses; Edging for beds, lawn or the like
- A01G9/04—Flower-pot saucers
- A01G9/047—Channels or gutters, e.g. for hydroponics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
- H01L31/1888—Manufacture of transparent electrodes, e.g. TCO, ITO methods for etching transparent electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Environmental Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Water Supply & Treatment (AREA)
- Photovoltaic Devices (AREA)
Abstract
提供了一种太阳能电池及其制造方法。根据实施例的太阳能电池包括：衬底；在所述衬底上的透明电极层；在所述透明电极层上的缓冲层；在所述缓冲层上的光吸收层；在所述光吸收层上的背侧电极层；以及在所述透明电极层的顶表面上形成的并且具有第一斜面和第二斜面的多个凹陷部分。
Description
技术领域
本发明涉及一种太阳能电池及其制造方法。
背景技术
近来，随着能量的需求增大，对于将太阳能转换为电能的太阳能电池的开发正在进行。
特别地，广泛使用了CIGS基太阳能电池，也就是说，具有衬底结构的p-n异质结装置，该衬底结构包括玻璃衬底、金属背侧电极层、p型CIGS基光吸收层、高电阻缓冲层和n型透明电极层等。
另外，为了提高太阳能电池的效率，各种研究正在进行。
发明内容
技术问题
本发明的一些方面的优点是本发明提供了一种太阳能电池设备和制造具有改善的光电转换效率的太阳能电池的方法。
技术方案
根据本发明的一个方面，提供了一种太阳能电池，包括：衬底；在所述衬底上的透明电极层；在所述透明电极层上的缓冲层；在所述缓冲层上的光吸收层；在所述光吸收层上的背侧电极层；以及在所述透明电极层的顶表面上形成的并且具有第一斜面和第二斜面的多个凹陷部分。
根据本发明的另一个方面，提供了一种制造太阳能电池的方法，包括：在衬底上形成透明电极层；在所述透明电极层的顶表面上形成包括第一斜面和第二斜面的多个凹陷部分；在所述透明电极层上形成缓冲层；在所述缓冲层上形成光吸收层；并且在所述光吸收层上形成背侧电极层。
有益效果
在所述实施例中，提供了一种太阳能电池，由于对衬底进行刻蚀，所以增大了所述太阳能电池的光吸收层的表面积。因此，太阳能电池高效地吸收外部的太阳光，并且具有改善的光电转换效率。
附图说明
图1是示出了根据本发明的实施例的太阳能电池的剖视图。
图2是图1的A部分的放大视图。
图3至6示出太阳能电池的制造方法。
具体实施方式
在实施例的描述中，在各个衬底、层、膜或电极等被描述为形成在其“上”或“下”的情况中，“上”或“下”也表示相对于部件“直接地”或“间接地（通过其他部件）”形成的部件。另外，将基于附图来描述关于各个部件的“上”或“下”的标准。在附图中，各个部件的大小可以被夸大来描述，并且不表示实际上应用的大小。
图1是示出了根据本发明的实施例的太阳能电池的剖视图，并且图2是图1中A部分的放大视图。
在图1和2中，根据实施例的太阳能电池包括支撑衬底100、透明电极层200、缓冲层300、光吸收层400和背侧电极层500。
支撑衬底100具有板形状，并且支撑透明电极层200、缓冲层300、光吸收层400和背侧电极层500。
支撑衬底100可以是绝缘体，支撑衬底100可以是玻璃衬底、塑料衬底或金属衬底。更具体地讲，支撑衬底100可以是钠钙玻璃衬底。
当支撑衬底100使用钠钙玻璃时，在太阳能电池的制造过程中，钠钙玻璃中包含的Na会扩散到由CIGS形成的光吸收层400中，这允许光吸收层400的电荷浓度增大。这也是可以增大太阳能电池的光电转换效率的因素。
另外，诸如矾土的陶瓷、不锈钢和柔性聚合物等衬底被用作支撑衬底100的材料。支撑衬底100可以是透明的且刚性或柔性的。
可以在支撑衬底100上形成透明电极层200。作为导电层的透明电极层 200是透明的，并且可以作为窗口层。透明电极层200包括氧化物。例如，透明电极层200可以包括In2O3、ITO（铟锡氧化物）、IGZO（铟镓锌氧化物）、氧化锌、AZO（铝锌氧化物、ZnO:Al）、SnO2、FTO（掺氟氧化锡；SnO2:F）和ATO（铝锡氧化物；SnO2:Al）等。
另外，该氧化物可以包括导电杂质，诸如铝（Al）、氧化铝（Al2O3）、镁（Mg）或镓（Ga）。更详细地，透明电极层200可以包括掺铝氧化锌；AZO或掺镓氧化锌；GZO等。
在透明电极层200的顶表面上形成多个凹陷部分250。可以通过蚀刻透明电极层200的一部分来形成多个凹陷部分250。
当通过多个凹陷部分250增大透明电极层200和光吸收层400的区域并且因此太阳光的入射角随着时间而改变时，增大了可以根据太阳光的入射角而吸收光的有效区域，由此增大发电产生时间。
优选的是，将多个凹陷部分250之间的间隔d形成为在1微米至2微米的范围内。
如果透明电极层200的厚度h太厚，就会降低太阳能电池的透射率，所以优选的是，将透明电极层200的厚度h形成为在0.5至1微米的范围内。
多个凹陷部分250可以具有在上面的范围内的互不相同的形成长度。多个凹陷部分250的厚度可以在透明电极层200的厚度的10%至70%的范围内变化。
通过多个凹陷部分250来凸出透明电极层200，并且在透明电极层200上层压的缓冲层300、光吸收层400和背侧电极层500与多个凹陷部分250形成的位置对应地顺序凸出，以形成井式梁结构（waffle structure）。在这种情况下，其截面可以形成为四边形，但是不限于此。
透明电极层200具有允许通过多个凹馅部分250使宽度比顶部窄的凸出结构。另外，相反，能够将透明电极层200形成为允许宽度比顶部宽的形状。
结果，增大了通过多个凹陷部分250来吸收光的光吸收层400的面积，由此高效地吸收外部的太阳光，并且提高光电转换效率。
在透明电极层200上布置缓冲层300。与本发明相同，具有作为光吸收层400的CIGS化合物的太阳能电池在p型半导体和n型半导体之间形成p-n节，该p型半导体即CIGS化合物薄膜，该n型半导体即透明电极层200薄膜。 然而，因为两种材料在晶格常数和带隙能量上有大的差别，所以为了形成良好的结，因为带隙的差别而需要要位于这两种材料的中间的缓冲层。
硫化镉（CdS）可以被用作用于缓冲层300的材料，但是可以使用不含重金属Cd的ZnS、MnS、Zn(O,S)、ZnSe、(Zn,In)Se、In(OH,S)和In2S2等。为了形成缓冲层300，使用化学浴沉积方法或ILGAR（离子层气相反应）方法或真空沉积方法。缓冲层300可以具有10～500nm的厚度。缓冲层300有助于提高效率，但是当操作太阳能电池时不是必要的。
可以在缓冲层300上形成光吸收层400。光吸收层400包括p型半导体化合物。更具体地讲，光吸收层400包括Ⅰ-Ⅲ-Ⅵ族基化合物。例如，光吸收层400可以具有Cu-In-Ga-Se基(Cu(In,Ga)Se2；CIGS基)、Cu-In-Se基或Cu-Ga-Se基晶体结构。光吸收层400的能量带隙可以是约1eV至1.8eV。
可以在光吸收层400上形成背侧电极层500。背侧电极层500变为导电层。背侧电极层500允许从太阳能电池的光吸收层400产生的电荷移动，使得电流可以流动到太阳能电池外部。背侧电极层500应当具有高导电率和小比电阻以实现上述的功能。
另外，背侧电极层500应当被保持为当在形成CIGS化合物中伴有的硫（S）或硒（Se）的气氛中进行热处理时具有高温稳定性。
可以通过钼（Mo）、金（Au）、铝（Al）、铬（Cr）、钨（W）和铜（Cu）的任何一种来形成这样的背侧电极层500。其中，具体地说，钼（Mo）可以允许一般满足背侧电极层500所需的特性。
背侧电极层500可以包括至少两层。在这种情况下，可以通过相同的金属或互不相同的金属来形成每一层。
本发明的实施例的太阳能电池包括具有曲面的光吸收层，由此高效地吸收入射到太阳能电池的光量，并且因此提高光电转换效率。
另外，与现有的薄膜太阳能电池结构相反，因为窗口层接触透明衬底，所以缓和地形成在空气/玻璃/透明电极层的折射率上的差别，并且因此，入射到太阳能电池的光的反射损失小，由此提高光电转换效率。该窗口层被水（H2O）或氧气（O2）等氧化，由此防止电气性能恶化，并且因此提供具有改善的可靠性的太阳能电池。
图3至6是示出了根据本发明的实施例的太阳能电池的制造方法的剖视图。关于本制造方法的说明指的是关于前述的太阳能电池的说明。关于前述的太阳能电池的说明可以必要地结合到关于本发明的制造方法的说明中。
如图3中所示，可以在支撑衬底100上形成窗口层200。通过CVD方法或溅镀方法来沉积窗口层200。
在图2和4中，可以通过蚀刻窗口200的一部分来形成多个凹陷部分250。
例如，在窗口层200上形成掩模图案。可以通过光刻方法来形成掩模图案。例如，在窗口200上涂敷光敏树脂，以形成光致抗蚀剂膜。光致抗蚀剂膜的一部分被暴露且蚀刻以形成掩模图案。
掩模图案具有岛形状。也就是说，掩模图案包括具有岛形状的多个掩模。在这种情况下，掩模彼此分开。另外，掩模可以布置成矩阵类型。
例如，可以通过蚀刻方法来形成多个凹陷部分250。通过混和氟化物、硫酸和硝酸来制备蚀刻溶液。也就是说，氟化物的浓度被设置为10至25重量百分比，并且，制造出加入了诸如15重量百分比的硫酸和15重量百分比的硝酸等的混合酸溶液。可以使用上述制造的蚀刻溶液在室温下蚀刻10分钟来形成多个凹陷部分250。
优选的是，多个凹陷部分250的深度h’形成为小于窗口层200的厚度的一半，但是不限于此。
多个凹陷部分250可以包括第一斜面210和第二斜面220。可在1<θ<45°的范围中形成由支撑衬底100的法线与第一斜面210形成的角度（θ）。
另外，当考虑与多个凹陷部分250相关的、由支撑衬底100的法线和第一斜面210形成角度（θ）时，如果（θ）值大于所需的角度，这就限制有效面积的增大，由此优选地将该角度（θ）形成为在1<θ<tan-1(d/h)的范围内。
可以通过凹陷部分250的形成过程来形成与第一斜面210和第二斜面220形成斜面的弯曲表面I。随着（θ）值增大，弯曲表面I的宽度会减小，弯曲表面I不形成在第一斜面210与第二斜面220接触的临界角。该弯曲表面可以与支撑衬底100平行。
从正面观察第一斜面210和第二斜面220的截面是斜面，并且第三斜面和第四斜面（未示出）可以形成为与第一斜面210和第二斜面220相邻。
也就是说，第一斜面210和第二斜面220面对彼此，并且第三斜面和第四斜面可以形成得面对彼此。第三斜面和第四斜面形成的角度可以形成为与第一斜面210和第二斜面220形成的角度相同。
可以通过第一、第二、第三和第四斜面来形成凹陷部分，并且，由它们形成的多个凸出部分可以具有棱锥形。更具体地讲，多个凸出部分可以具有多角锥形状。更具体地讲，该多个凸出部分可以具有多角锥形状。另外，由第一、第二、第三和第四斜面形成的凸出部分的顶表面可以具有四边形形状。
在图5中，可以在窗口层200上形成缓冲层300。可以通过经由溅镀方法或化学浴沉积（CBD）方法沉积硫化镉来形成缓冲层300。
在图6中，在缓冲层300上形成光吸收层400和背侧电极层500。
可以通过形成下述方法来广泛地制造光吸收层400：在同时或分别蒸发例如Cu、In、Ga和Se的同时形成Cu-In-Ga-Se基(Cu(In,Ga)Se2；CIGS基)的光吸收层400的方法；以及在形成金属前体膜之后使用硒化工艺的方法。
相反，可以通过仅使用Cu靶和In靶或Cu靶和Ga靶的溅镀方法和硒化工艺来形成CIS基或CIG基光吸收层400。
接下来，可以在光吸收层400上形成背侧电极层500。可以通过使用钼进行PVD（物理气相沉积）或电镀来形成背侧电极层500。
根据本发明的实施例可以提供具有提高的光吸收率的太阳能电池。
可以明白的是，本发明所属领域的普通技术人员可以在不改变技术思想或必要特征的情况下，可以以其他具体形式来执行本发明。因此，如上所述的实施例在各个方面都是用于说明目的，但是不限于它们。本发明的范围由以下权利要求书来表示，而非具体说明来表示，权利要求书的等同体的范围和概念应当被理解为包括在本发明的范围内。
另外，虽然以上图示并描述了本发明的优选实施例，但是本发明不限于上述特定实施例，并且本领域的技术人员在由权利要求书所限定的本发明的要旨的范围内可以进行多种修改，使得修改的实施例不会被理解成脱离本发明的技术思想和观点。
工业适用性
本发明涉及一种太阳能电池及其制造方法。
Claims (7)
1.一种太阳能电池，包括：
衬底；
在所述衬底上的透明电极层；
在所述透明电极层上的缓冲层；
在所述缓冲层上的光吸收层；
在所述光吸收层上的背侧电极层；
在所述透明电极层的顶表面上形成的并且具有第一斜面、第二斜面、第三斜面和第四斜面的多个凹陷部分，
在所述多个凹陷部分的底表面中形成的并且与所述第一斜面和所述第二斜面接触的弯曲表面，其中，所述透明电极层的厚度h形成为在0.5微米至1微米的范围内，
其中，所述多个凹陷部分的厚度在所述透明电极层的厚度的10％至70％的范围内，
其中，所述透明电极层、所述缓冲层、所述光吸收层和所述背侧电极层具有与所述多个凹陷部分相对应的凸出部分。
2.根据权利要求1所述的太阳能电池，其中，由支撑衬底的法线和所述第一斜面形成的第一角度(θ)形成为在1<θ<45°的范围内。
3.根据权利要求1所述的太阳能电池，其中，当在所述多个凹陷部分的中心之间的间隔是d，并且所述透明电极层的厚度是h时，第一角度(θ)形成为在1<θ<tan-1(d/h)的范围内。
4.根据权利要求1所述的太阳能电池，其中，所述多个凹陷部分的宽度越接近顶部越宽。
5.根据权利要求1所述的太阳能电池，其中，所述第一斜面和所述第二斜面面对彼此，所述第一斜面和所述第二斜面分别与第三斜面和第四斜面相邻，并且所述第三斜面与所述第四斜面相邻。
6.根据权利要求5所述的太阳能电池，其中，由所述第一、第二、第三和第四斜面形成的凸出部分的顶表面具有四边形形状。
7.根据权利要求6所述的太阳能电池，其中，所述凸出部分具有四角锥形状。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020110007676A KR101283140B1 (ko) | 2011-01-26 | 2011-01-26 | 태양전지 및 이의 제조방법 |
| KR10-2011-0007676 | 2011-01-26 | ||
| PCT/KR2012/000001 WO2012102492A2 (en) | 2011-01-26 | 2012-01-02 | Solar cell and method of fabricating the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103477443A CN103477443A (zh) | 2013-12-25 |
| CN103477443B true CN103477443B (zh) | 2017-02-15 |
Family
ID=46581241
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201280015572.6A Expired - Fee Related CN103477443B (zh) | 2011-01-26 | 2012-01-02 | 太阳能电池及其制造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9941427B2 (zh) |
| EP (1) | EP2668670A4 (zh) |
| JP (1) | JP5902199B2 (zh) |
| KR (1) | KR101283140B1 (zh) |
| CN (1) | CN103477443B (zh) |
| WO (1) | WO2012102492A2 (zh) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107768143A (zh) * | 2017-09-16 | 2018-03-06 | 景德镇陶瓷大学 | 一种量子点敏化太阳能电池的钝化层及其制备方法和应用 |
| CN108649080A (zh) * | 2018-07-19 | 2018-10-12 | 北京铂阳顶荣光伏科技有限公司 | 一种太阳能电池及其制备方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5370747A (en) * | 1991-11-25 | 1994-12-06 | Sanyo Electric Co., Ltd. | Photovoltaic device |
| CN101743641A (zh) * | 2007-07-13 | 2010-06-16 | 欧姆龙株式会社 | Cis系太阳能电池及其制造方法 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4599482A (en) * | 1983-03-07 | 1986-07-08 | Semiconductor Energy Lab. Co., Ltd. | Semiconductor photoelectric conversion device and method of making the same |
| JPH04133360A (ja) | 1990-09-25 | 1992-05-07 | Sanyo Electric Co Ltd | 光起電力装置 |
| JPH0951109A (ja) | 1995-08-08 | 1997-02-18 | Katsuaki Sato | カルコパイライト型化合物の薄膜の作製方法及びその薄膜を有した太陽電池 |
| US6222117B1 (en) * | 1998-01-05 | 2001-04-24 | Canon Kabushiki Kaisha | Photovoltaic device, manufacturing method of photovoltaic device, photovoltaic device integrated with building material and power-generating apparatus |
| CN1287690A (zh) * | 1998-01-22 | 2001-03-14 | 时至准钟表股份有限公司 | 太阳能电池装置及其制造方法 |
| JP3434259B2 (ja) * | 1999-03-05 | 2003-08-04 | 松下電器産業株式会社 | 太陽電池 |
| US6259016B1 (en) | 1999-03-05 | 2001-07-10 | Matsushita Electric Industrial Co., Ltd. | Solar cell |
| WO2003036657A1 (fr) * | 2001-10-19 | 2003-05-01 | Asahi Glass Company, Limited | Substrat a couche d'oxyde conductrice transparente, son procede de production et element de conversion photoelectrique |
| US20080105293A1 (en) * | 2006-11-02 | 2008-05-08 | Guardian Industries Corp. | Front electrode for use in photovoltaic device and method of making same |
| US7982127B2 (en) | 2006-12-29 | 2011-07-19 | Industrial Technology Research Institute | Thin film solar cell module of see-through type |
| US20080223430A1 (en) * | 2007-03-14 | 2008-09-18 | Guardian Industries Corp. | Buffer layer for front electrode structure in photovoltaic device or the like |
| US20080308145A1 (en) * | 2007-06-12 | 2008-12-18 | Guardian Industries Corp | Front electrode including transparent conductive coating on etched glass substrate for use in photovoltaic device and method of making same |
| KR101363327B1 (ko) * | 2007-08-16 | 2014-02-14 | 주성엔지니어링(주) | 박막형 태양전지 및 그 제조방법 |
| EP2339645A4 (en) | 2008-10-03 | 2014-03-26 | Toppan Printing Co Ltd | SOLAR BATTERY MODULE |
| US8022291B2 (en) * | 2008-10-15 | 2011-09-20 | Guardian Industries Corp. | Method of making front electrode of photovoltaic device having etched surface and corresponding photovoltaic device |
| US20100186816A1 (en) * | 2009-01-23 | 2010-07-29 | Samsung Electronics Co., Ltd. | Solar cell |
| JP2010205804A (ja) * | 2009-02-27 | 2010-09-16 | Mitsubishi Heavy Ind Ltd | 光電変換装置 |
| KR20100115193A (ko) * | 2009-04-17 | 2010-10-27 | 엘지디스플레이 주식회사 | 태양전지의 제조방법 |
| JP2010272466A (ja) * | 2009-05-25 | 2010-12-02 | Fujifilm Corp | 透明導電体及びその製造方法 |
| US20120097239A1 (en) * | 2009-07-14 | 2012-04-26 | Mitsubishi Electric Corporation | Method for roughening substrate surface, method for manufacturing photovoltaic device, and photovoltaic device |
| KR100989615B1 (ko) | 2009-09-02 | 2010-10-26 | 엘지전자 주식회사 | 태양전지 |
| DE102009040621A1 (de) | 2009-09-08 | 2011-03-24 | Schott Solar Ag | Dünnschichtsolarmodul und Verfahren zu dessen Herstellung |
| KR20120055132A (ko) * | 2010-11-23 | 2012-05-31 | 엘지전자 주식회사 | 박막 태양 전지 |
-
2011
- 2011-01-26 KR KR1020110007676A patent/KR101283140B1/ko not_active IP Right Cessation
-
2012
- 2012-01-02 JP JP2013551889A patent/JP5902199B2/ja not_active Expired - Fee Related
- 2012-01-02 US US13/982,195 patent/US9941427B2/en not_active Expired - Fee Related
- 2012-01-02 EP EP12739578.8A patent/EP2668670A4/en not_active Withdrawn
- 2012-01-02 WO PCT/KR2012/000001 patent/WO2012102492A2/en active Application Filing
- 2012-01-02 CN CN201280015572.6A patent/CN103477443B/zh not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5370747A (en) * | 1991-11-25 | 1994-12-06 | Sanyo Electric Co., Ltd. | Photovoltaic device |
| CN101743641A (zh) * | 2007-07-13 | 2010-06-16 | 欧姆龙株式会社 | Cis系太阳能电池及其制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US9941427B2 (en) | 2018-04-10 |
| JP5902199B2 (ja) | 2016-04-13 |
| KR101283140B1 (ko) | 2013-07-05 |
| WO2012102492A3 (en) | 2012-11-29 |
| JP2014504036A (ja) | 2014-02-13 |
| KR20120086445A (ko) | 2012-08-03 |
| WO2012102492A2 (en) | 2012-08-02 |
| CN103477443A (zh) | 2013-12-25 |
| EP2668670A2 (en) | 2013-12-04 |
| US20140034124A1 (en) | 2014-02-06 |
| EP2668670A4 (en) | 2014-07-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9812593B2 (en) | Solar cell and preparing method of the same | |
| US9941424B2 (en) | Solar cell | |
| EP2485272A2 (en) | Solar power generation apparatus and manufacturing method thereof | |
| EP2695200B1 (en) | Solar cell | |
| CN104025310A (zh) | 太阳能电池及其制造方法 | |
| CN104272469A (zh) | 太阳能电池装置及其制造方法 | |
| JP2014503125A (ja) | 太陽電池及びその製造方法 | |
| CN103477443B (zh) | 太阳能电池及其制造方法 | |
| CN103339741B (zh) | 太阳能电池设备及其制造方法 | |
| KR101189415B1 (ko) | 태양전지 및 이의 제조방법 | |
| JP2014504033A (ja) | 太陽電池及びその製造方法 | |
| CN103098233A (zh) | 太阳能电池及其制造方法 | |
| KR101897073B1 (ko) | 태양전지 및 이의 제조 방법 | |
| CN102959735B (zh) | 太阳能电池及其制造方法 | |
| KR101765924B1 (ko) | 태양전지 및 이의 제조방법 | |
| US20130025676A1 (en) | Solar cell and manufacturing method of the same | |
| CN103597613A (zh) | 太阳能电池及其制造方法 | |
| CN104054182B (zh) | 太阳能电池设备及其制造方法 | |
| KR101273175B1 (ko) | 태양전지 및 이의 제조방법 | |
| KR101273123B1 (ko) | 태양전지 및 이의 제조방법 | |
| KR101231398B1 (ko) | 태양전지 및 이의 제조방법 | |
| KR20120090394A (ko) | 태양전지 및 이의 제조방법 | |
| KR20120087043A (ko) | 태양전지 및 이의 제조방법 | |
| KR20120085104A (ko) | 태양전지 및 이의 제조방법 | |
| CN104067396A (zh) | 太阳能电池装置及其制造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170215 Termination date: 20180102 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |