CN105789353B - 具有掺杂缓冲层的太阳能电池和制造太阳能电池的方法 - Google Patents
具有掺杂缓冲层的太阳能电池和制造太阳能电池的方法 Download PDFInfo
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- CN105789353B CN105789353B CN201410825949.5A CN201410825949A CN105789353B CN 105789353 B CN105789353 B CN 105789353B CN 201410825949 A CN201410825949 A CN 201410825949A CN 105789353 B CN105789353 B CN 105789353B
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
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- H01L31/02—Details
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- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
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- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
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- H01L31/0324—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIVBVI or AIIBIVCVI chalcogenide compounds, e.g. Pb Sn Te
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- H01L31/03365—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table comprising only Cu2X / CdX heterojunctions, X being an element of Group VI of the Periodic Table
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
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Abstract
一种方法包括:在光伏器件的吸收层上方形成缓冲层;以及在形成缓冲层的步骤之后非本征地掺杂缓冲层。本发明涉及具有掺杂缓冲层的太阳能电池和制造太阳能电池的方法。
Description
技术领域
本发明涉及具有掺杂缓冲层的太阳能电池和制造太阳能电池的方法。
背景技术
本发明涉及薄膜光伏电池的制造。太阳能电池是通过光伏(PV)效应由太阳光产生电流的电子器件。薄膜太阳能电池具有沉积在衬底上的一层或多层PV材料薄膜。PV材料的膜厚度可以是纳米级或微米级。
吸收层吸收光以转化为电流。用作太阳能电池中的吸收层的薄膜PV材料的实例包括铜铟镓硒化物(CIGS)和碲化镉。太阳能电池也包括正面接触层和背面接触层以辅助光捕捉和光电流提取并且为太阳能电池提供电接触。正面接触层通常包括透明导电氧化物(TCO)层。TCO层将光传输至吸收层并且在TCO层的平面内传导电流。一些太阳能电池包括位于吸收层和TCO层之间的缓冲层。与不具有缓冲层的类似太阳能电池相比,缓冲层可以提高电池效率,增加开路电压(Voc)、短路电流(Jsc)和填充因子(FF)。
诸如CdS和ZnS的合适的缓冲层已被用于高效率CIGS太阳能电池中。缓冲层作为n型材料以与p型CIGS或CdTe形成p/n结。通常地,由于其成本低、工艺简单和可扩展性,使用化学浴沉积(CBD)制备CdS和ZnS基缓冲层。
发明内容
为了解决现有技术中存在的问题,根据本发明的一个方面,提供了一种方法,包括:在光伏器件的吸收层上方形成缓冲层;以及在所述形成缓冲层的步骤之后,非本征地掺杂所述缓冲层。
在上述方法中,所述非本征地掺杂所述缓冲层的步骤包括对所述缓冲层进行退火。
在上述方法中,所述非本征地掺杂所述缓冲层的步骤包括在包括掺杂剂的大气环境中对所述缓冲层进行退火。
在上述方法中,所述大气环境包括由硼(B)、铝(Al)、镓(Ga)、铟(In)或它们的组合组成的组中的至少一种。
在上述方法中,所述大气环境包括B2H6。
在上述方法中,在介于约70℃至约400℃的温度范围内实施所述退火。
在上述方法中,在约170℃的温度下实施所述退火约10分钟。
在上述方法中,还包括在所述缓冲层上方形成正面接触层,其中,所述非本征地掺杂所述缓冲层和形成所述正面接触层的步骤均在同一腔室中实施。
在上述方法中,所述形成所述正面接触层的步骤包括金属有机化学汽相沉积。
根据本发明的另一方面,还提供了一种方法,包括:通过选自由原子层沉积、溅射、电沉积、蒸发或化学汽相沉积组成的组中的工艺在光伏器件的吸收层上方形成缓冲层;以及非本征地掺杂所述缓冲层。
在上述方法中,所述非本征地掺杂所述缓冲层的步骤包括对所述缓冲层进行退火。
在上述方法中,所述非本征地掺杂所述缓冲层的步骤包括在包括掺杂剂的大气环境中对所述缓冲层进行退火。
在上述方法中,所述大气环境包括B2H6。
在上述方法中,在约170℃的温度下实施所述退火约10分钟。
在上述方法中,还包括在所述缓冲层上方形成正面接触层,其中,所述非本征地掺杂所述缓冲层和形成所述正面接触层的步骤均在同一腔室中实施。
在上述方法中,所述形成所述正面接触层的步骤包括金属有机化学汽相沉积。
在上述方法中,还包括在所述缓冲层上方形成正面接触层,其中:所述非本征地掺杂所述缓冲层和形成所述正面接触层的步骤均在同一腔室中实施;所述非本征地掺杂所述缓冲层的步骤包括在约170℃的温度下在包括B2H6的大气环境中退火所述缓冲层约10分钟;以及所述形成所述正面接触层的步骤包括金属有机化学汽相沉积。
在上述方法中,还包括:在包括玻璃、塑料或金属箔的衬底上方形成钼的背面接触层;在所述背面接触层上方形成所述吸收层,其中,所述吸收层包括由铜(Cu)、镓(Ga)、铟(In)、铝(Al)、硒(Se)、硫(S)或它们的组合组成的组中的至少一种,其中,所述缓冲层包括由CdS、ZnS、ZnO、ZnSe或它们的组合组成的组中的至少一种。
根据本发明的又一方面,还提供了一种方法,包括:在光伏器件的吸收层上方形成缓冲层;在形成所述缓冲层的步骤之后,在具有含有掺杂剂的大气环境的腔室中对所述缓冲层进行退火;以及在实施所述退火的同一腔室中在所述缓冲层上形成正面接触层。
在上述方法中,在约170℃的温度下在包括B2H6的大气环境中退火所述缓冲层约10分钟,以及所述形成所述正面接触层的步骤包括金属有机化学汽相沉积。
附图说明
当结合附图进行阅读时,从以下详细描述可以更好地理解本发明的方面。应该注意,根据工业中的标准实践,各个部件未按比例绘制。实际上,为了清楚的论述,各个部件的尺寸可以任意地增大或缩小。除非另有指示,否则两个或多个附图中,相同的参考标号用于代表相同的部件。
图1是根据一些实施例的太阳能电池的截面图。
图2是根据一些实施例的制造图1中所示的太阳能电池的方法的流程图。
图3是根据一些实施例的图2的方法的实例的流程图。
图4是表征未掺杂缓冲层和如本文中描述的掺杂缓冲层的最佳性能的数据的吸收(Tauc)图。
图5是用于掺杂如图1所示的缓冲层的MOCVD腔室的示意图。
图6是用于改进的缓冲层的掺杂浓度分布的实例的示意图。
具体实施方式
以下公开提供了许多用于所提供主题的不同特征的许多不同实施例或实例。下面描述了部件和布置的具体实例以简化本发明。当然,这些仅仅是实例,而不旨在限制本发明。例如,在以下描述中,在第二部件上方或者之上形成第一部件可以包括第一部件和第二部件以直接接触的方式形成的实施例,并且也可以包括在第一部件和第二部件之间可以形成额外的部件,从而使得第一部件和第二部件可以不直接接触的实施例。此外,本发明可在各个实例中重复参考标号和/或字符。这种重复是为了简单和清楚的目的,并且其本身不指示所论述的各个实施例和/或结构之间的关系。
另外,为便于描述,在本文中可以使用诸如“在…之下”、“在…下方”、“下”、“在…之上”、“上”等的空间相对位置术语,以描述如图中所示的一个元件或部件与另一个(或另一些)元件或部件的关系。除了图中所示的方位外,空间相对术语旨在包括器件在使用或操作中的不同方位。装置可以以其他方式定向(旋转90度或在其他方位上),并且可以对本文中使用的空间相对位置描述符作相应的解释。
在光伏电池中,光生电子空穴对在耗尽区内分裂,其中,通过p/n结形成内建电势。为了扩宽耗尽区并且因此改进结质量,期望缓冲层的增大的载流子浓度。为了实现这一目标,可以通过非本征掺杂(例如,掺杂硼)来改进缓冲层。改进的缓冲层可以提供用于TCO形成的更有利的衬底表面,从而提高缓冲层和TCO层之间的粘附。
如果通过CBD沉积缓冲层,则通过改变CBD的加工条件(诸如浴温度,或离子比率)可以改变缓冲层的载流子浓度。将一定剂量的掺杂剂源注入到溶液内可以增大缓冲层的载流子浓度。在本文描述的其他实施例中,可以将缓冲层的非本征掺杂扩展至非CBD处理的缓冲层。例如,下文描述的方法可以用于非本征地掺杂缓冲层,其中缓冲层通过诸如原子层沉积(ALD)、溅射、电沉积、蒸发和化学汽相沉积(CVD)的工艺沉积。
本发明描述了太阳能电池和制造太阳能电池的方法,其中,首先由任何合适的方法形成缓冲层,和然后非本征地掺杂缓冲层。在一些实施例中,通过在与其中沉积正面接触透明导电氧化物(TCO)材料相同的金属有机化学汽相沉积(MOCVD)工具中,在选择的大气环境下通过对缓冲层进行退火来实施非本征掺杂。因此,可以非本征地掺杂缓冲层而不管缓冲层是否是通过CBD、ALD、溅射、电沉积、蒸发或CVD形成的。
图1根据一些实施例示出了在形成正面接触层之后配置的太阳能电池板100。图1所示的太阳能电池板100的部分包括互连结构172,它提供面板100的两个相邻的太阳能电池之间的串联连接。在图1中,为了清楚,互连结构172的宽度相对于收集区170的宽度被放大,但是收集区170事实上比互连结构172宽得多。
太阳能电池100包括太阳能电池衬底110、背面接触层120、吸收层130、缓冲层140和正面接触层150。
衬底110可以包括任何合适的衬底材料,诸如玻璃。在一些实施例中,衬底110包括诸如钠钙玻璃的玻璃衬底、或柔性金属箔、或聚合物(例如,聚酰亚胺、聚对苯二甲酸乙二醇酯(PET)、聚萘二甲酸乙二醇酯(PEN)。其他实施例包括另外的其他衬底材料。
背面接触层120包括任何合适的背面接触材料,诸如金属。在一些实施例中,背面接触层120可以包括钼(Mo)、铂(Pt)、金(Au)、银(Ag)、镍(Ni)或铜(Cu)。其他实施例包括另外的其他背面接触材料。在一些实施例中,背面接触层120的厚度介于约50nm至约2μm之间。
在一些实施例中,吸收层130包括任何合适的吸收材料,诸如p型半导体。在一些实施例中,该吸收层130可以包括黄铜矿基材料,例如,包括Cu(In,Ga)Se2(CIGS)、碲化镉(CdTe)、CulnSe2(CIS)、CuGaSe2(CGS)、Cu(In,Ga)Se2(CIGS)、Cu(In,Ga)(Se,S)2(CIGSS)、CdTe或非晶硅。其他实施例包括另外的其他吸收材料。在一些实施例中,该吸收层130的厚度介于约0.3μm至约8μm之间。
在吸收层130上沉积缓冲层140以形成p/n结。缓冲层140可以包括任何合适的缓冲材料,诸如n型半导体。在一些实施例中,缓冲层140可以包括硫化镉(CdS)、硫化锌(ZnS)、硒化锌(ZnSe)、硫化铟(In2S3)、硒化铟(In2Se3)、Zn1-xMgxO(例如,ZnO)或其组合。其他实施例包括另外的其他缓冲材料。在一些实施例中,该缓冲层140的厚度介于约1nm至约500nm之间。
在一些实施例中,该缓冲层140在以下描述的工艺中非本征掺杂。在一些实施例中,掺杂剂为硼。在一些实施例中,依赖位置来控制缓冲层内的掺杂剂分布。例如,可以在缓冲层的顶面(TCO和缓冲层之间的界面)和底面(缓冲层和吸收层之间的界面)之间改变掺杂剂浓度。图6是如本文描述的用于改进的缓冲层140的掺杂浓度分布的实例的示意图。在缓冲层140和正面接触层150之间的界面处的掺杂剂浓度最高。在靠近缓冲层140和正面接触层150之间的界面处浓度下降最快。在远离缓冲层140和正面接触层150之间的界面处的掺杂剂浓度的变化速率较小。
在一些实施例中,正面接触层150包括退火的透明导电氧化物(TCO)层,该透明导电氧化物(TCO)层具有约100nm以上的恒定的厚度。在本文中可交换地使用术语“正面接触”和“TCO层”;前一个术语指的是层150的功能,后一个术语指的是它的组成。在一些实施例中,TCO层150的电荷载流子密度可以为从约1×1017cm-3至约1×1021cm-3。用于退火的TCO层的TCO材料可以包括合适的正面接触材料,诸如金属氧化物和金属氧化物前体。在一些实施例中,TCO材料可以包括AZO、GZO、AGZO、BZO等;AZO:氧化铝掺杂的ZnO;GZO:镓掺杂的ZnO;AGZO:氧化铝和镓共掺杂的ZnO;BZO硼掺杂的ZnO。在其他实施例中,TCO材料可以是氧化镉(CdO)、氧化铟(In2O3)、二氧化锡(SnO2)、五氧化二钽(Ta2O5)、氧化镓铟(GaInO3)、(CdSb2O3)或氧化铟(ITO)。TCO材料也可以掺杂有合适的掺杂剂。
在一些实施例中,在掺杂的TCO层150中,SnO2可以掺杂锑(Sb)、氟(F)、砷(As)、铌(Nb)或钽(Ta)。在一些实施例中,ZnO可以掺杂任意的铝(Al)、镓(Ga)、硼(B)、铟(In)、钇(Y)、钪(Sc)、氟(F)、钒(V)、硅(Si)、锗(Ge)、钛(Ti)、锆(Zr)、铪(Hf)、镁(Mg)、砷(As)、或氢(H)。在其他实施例中,SnO2可以掺杂锑(Sb)、F、As、铌(Nb)、或钽(Ta)。在其他实施例中,In2O3可以掺杂锡(Sn)、Mo、Ta、钨(W)、Zr、F、Ge、Nb、Hf或Mg。在其他实施例中,CdO可以掺杂In或Sn。在其他实施例中,GaInO3可以掺杂Sn或Ge。在其他实施例中,CdSb2O3可以掺杂Y。在其他实施例中,ITO可以掺杂Sn。其他实施例包括另外的其他TCO材料和相应的掺杂剂。
在一些实施例中,多个太阳能电池100彼此邻近布置,其中,每个太阳能电池的正面接触层150将电流传导至下一个邻近的太阳能电池。每个太阳能电池100包括用于将电荷载流子从太阳能电池的正面接触层150传送至位于同一面板上的下一个邻近的太阳能电池的背面接触层120的互连结构172。在收集区170中提供层120、130、140和150。互连结构172还包括三条线,被称为P1、P2、和P3。P1划线延伸穿过背面接触层120并且填充有吸收层材料。P2划线延伸穿过缓冲层140和吸收层130,并且与下一个邻近的太阳能电池的背面接触层120接触,从而串联连接邻近的太阳能电池。P3线延伸穿过正面接触层150、缓冲层140和吸收层130。邻近的太阳能电池的P3线直接位于太阳能电池100的收集区170的左侧。
P3线将邻近的太阳能电池的正面接触层150、缓冲层140和吸收层130分隔开,所以每个正面接触层可以穿过P2划线将电流传输至下一个邻近的太阳能电池的背面接触层而不会造成邻近的正面接触层之间的短路。
图2是根据一些实施例的制作太阳能电池的方法的流程图。
在步骤10中,在太阳能电池衬底110上方形成背面接触层120。可以通过PVD来沉积背面接触层,例如,在衬底上方溅射诸如Mo、Cu或Ni的金属,或通过CVD或ALD或其他合适的技术来沉积背面接触层。然后形成穿过背面接触层120的P1划线。例如,可以通过机械划切或通过激光或其他合适的划切工艺来形成划线。面板100中的每个太阳能电池具有相应的P1划线。
在步骤12中,在背面接触层120上方形成吸收层130。可以通过PVD(例如,溅射)、CVD、ALD、电沉积或其他适合的技术来沉积吸收层130。例如,可以通过溅射包括铜、铟和镓的金属膜,然后对金属膜施加硒化工艺来形成CIGS吸收层。
在步骤14中,通过任何合适的方法在吸收层130上方形成该缓冲层140。例如,缓冲层140可以通过化学沉积(例如,化学浴沉积,或CBD)、PVD、ALD、溅射、蒸发、CVD或其他适合的技术沉积。在形成缓冲层后,形成完全延伸穿过缓冲层140和吸收层130的P2划线。
在步骤16中,在形成缓冲层的步骤14之后,非本征地掺杂缓冲层140。在一些实施例中,非本征地掺杂缓冲层140的步骤16包括在包括掺杂剂的大气环境中对缓冲层进行退火。在一些实施例中,大气环境包括由硼(B)、铝(Al)、镓(Ga)、铟(In)或它们的组合组成的组中的至少一种。在一些实施例中,大气环境包括B2H6。
在一些实施例中,在从约70℃至约400℃的温度范围内实施退火。例如,在一些实施例中,退火温度可以为是68℃或72℃,或395℃或405℃。在一些实施例中,退火温度可以为约170℃。例如,温度可以为167℃或173℃。
在一些实施例中,由CdS(或ZnS)形成缓冲层,大气环境包括B2H6,以及退火温度和时间选择为实现掺杂剂/Cd(或掺杂剂/Zn)的掺杂剂浓度比率在10-3至9×10-1的范围内。未掺杂的CdS的电荷载流子浓度为约1016/cc。掺杂的CdS的浓度可以介于约1017/cc至1018/cc的范围内。在一些实施例中,在约170℃的温度下,在约10分钟内达到目标掺杂浓度。例如,在一些实施例中,退火时间为9分钟或11分钟。在一些实施例中,该掺杂剂浓度可以提供0.05eV的光学带隙的能量的增加。在其他实施例中,较低的退火温度使用较长的退火时间。
在一些实施例中,在适合用于MOCVD工艺的腔室中实施步骤16。
在步骤18中,在缓冲层140上方形成正面接触层150,缓冲层140位于吸收层130上方。这一步骤包括在缓冲层140上方沉积正面接触材料(TCO)。在一些实施例中,在同一工具中实施非本征地掺杂缓冲层140的步骤16和形成正面接触层150的步骤18。在一些实施例中,沉积正面接触材料的步骤18包括化学汽相沉积(CVD),诸如金属有机化学汽相沉积(MOCVD)。在其他实施例中,通过低压化学汽相淀积(LPCVD)或通过等离子体增强化学汽相沉积(PECVD)来沉积正面接触材料。
在一些实施例中,在单个加工工具的同一腔室中实施步骤16和18。在其他实施例中,在同一工具内的不同腔室中实施步骤16和18,并且机器人器件在第一腔室(其中,实施退火)和第二腔室(其中,沉积TCO材料)之间移动衬底110,而不会在步骤16和18之间破坏工具中的真空。
在一些实施例中,正面接触层150允许至少50%的入射光子传输穿过正面接触层150。
图3是根据一些实施例的图2的方法的实例的流程图。
图3的步骤10和12可以与图2的步骤10和12相同,并且为了简洁,关于图3的步骤10和12不再重复。
在步骤24中,根据一些实施例,通过诸如ALD、溅射、电沉积、蒸发或CVD的非CBD方法形成缓冲层140。由于本文所述的方法包括用于掺杂的单独的、非CBD步骤,因此本文描述的方法可以,但不要求,包括通过CBD形成缓冲层。
在步骤26中,在B2H6的大气环境中在MOCVD腔室内通过退火来非本征地掺杂缓冲层140。在一些实施例中,在约170℃的温度下实施约10分钟的退火。
在步骤28中,在与实施退火的相同的腔室中通过MOCVD在非本征地掺杂的缓冲层上形成正面接触层150。
图4是未通过图3中示出的方法非本征掺杂的CdS膜和通过图3中示出的方法非本征掺杂的CdS膜的吸收(Tauc)图。在原始玻璃上形成准备的CdS膜并且首先转移到MOCVD腔室中。然后,在B2H6的大气环境中在170℃的温度下对CdS膜退火10分钟。
图4的吸收(Tauc)图可以用于确定诸如CdS膜或其他缓冲层材料的非晶薄膜材料的光学带隙。通过圆402表示对应于未掺杂的CdS膜的数据,并且通过三角形404表示对应于非本征地掺杂的CdS膜的数据。该图在横坐标上示出了量hν(光的光能)。在纵坐标上绘制了量(αhν)2(光密度),其中,α是材料的吸收系数。
图4中的每个吸收(Tauc)图具有线性区,该线性区代表吸收的开始(onset)。外推该线性区至横坐标以表示材料的光学带隙的能量。该图分别示出了用于未掺杂的膜和用于非本征地掺杂的膜404的外推线403和405。从而,在图4中绘制的数据中,未掺杂的CdS的光学带隙能量为约2.33eV而非本征地掺杂的CdS的光学带隙能量为约2.38eV。从(αhν)2相对于(hν)的图,带隙向着更高能量偏移指示掺杂并且表明通过三角形404示出的将硼引入CdS膜内。也就是说,可以在含有期望的掺杂剂的大气环境中通过退火来实施掺杂工艺以改进缓冲层的载流子浓度和光学带隙。可以通过控制掺杂水平来控制带隙增加的量。
图5是用于非本征地掺杂图1中所示的缓冲层140的MOCVD腔室500的示意图。在工作台表面(诸如压板或输送器504)上提供太阳能电池衬底。在一些实施例中,腔室500具有用于将相应的材料分配至腔室内的多个喷嘴。例如,图5示出了用于将掺杂材料(例如,B2H6)分配至MOCVD腔室500的第一喷嘴506和用于将TCO材料(例如,ITO)分配至相同的MOCVD腔室500以形成正面接触层150的第二喷嘴508。无需在掺杂和正面接触层形成步骤之间破坏真空。在其他实施例(未示出)中,输送器504(或机器人器件)在分别用于掺杂和施加TCO材料的同一工具的不同工作台之间传输太阳能电池100。
通过增大缓冲层的光学带隙,太阳能阵列(用于吸收入射光)的效率可以提高。短路电流Jsc可以相应地增加。载流子浓度的增加还增加了缓冲层140的导电性。从而,可以减小太阳能电池的整体串联电阻。
本文所述的方法在沉积缓冲层后对太阳能电池的缓冲层实施不同的非本征掺杂步骤。在一些实施例中,非本征掺杂步骤在包含期望的掺杂剂的大气环境中对缓冲层进行退火。在一些实施例中,在用于实施随后的TCO材料沉积以形成太阳能电池的正面接触层的同一MOCVD腔室中实施退火。
通过非本征掺杂来增加缓冲层140的载流子浓度有利于提高太阳能电池的器件性能存在许多原因。例如,通过增强掺杂的缓冲层的导电性可以降低器件电阻。同样,掺杂的缓冲层140的增加的载流子浓度有助于提高开路电压Voc。另外,通过增加缓冲层140的载流子浓度可以减小CdS/CIGS(缓冲层/吸收层)界面处的复合界面,从而改进结质量。同时,CdS膜的增大的光学带隙可以提高光电流。非本征掺杂工艺可以在用于TCO制备的同一MOCVD工具内实施,所以没有额外的设备或设施的成本。因为单个工具用于掺杂缓冲层和沉积正面接触TCO材料,所以不存在由破坏真空或在用于掺杂的工具和用于TCO沉积的工具之间转移衬底导致的延迟。
在一些实施例中,一种方法包括:在光伏器件的吸收层上方形成缓冲层;以及在形成缓冲层的步骤之后非本征地掺杂缓冲层。
在一些实施例中,一种方法包括:通过选自由原子层沉积、溅射、蒸发或化学汽相沉积组成的组中的工艺在光伏器件的吸收层上方形成缓冲层;以及非本征地掺杂缓冲层。
在一些实施例中,一种方法包括:在光伏器件的吸收层上方形成缓冲层;在形成缓冲层的步骤之后,在具有含有掺杂剂的大气环境的腔室中对缓冲层进行退火;以及在实施退火的同一腔室中在缓冲层上形成正面接触层。
上面概述了若干实施例的特征,使得本领域技术人员可以更好地理解本发明的各个方面。本领域技术人员应该理解,他们可以容易地使用本发明作为基础来设计或修改用于与本文中所介绍的实施例实施相同的目的和/或实现相同优势的其他工艺和结构。本领域技术人员也应该意识到,这种等同构造并不背离本发明的精神和范围,并且在不背离本发明的精神和范围的情况下,他们可以对本发明做出多种变化、替换以及改变。
Claims (20)
1.一种制造太阳能电池的方法,包括:
通过单个非化学浴沉积方法在光伏器件的吸收层上方形成与所述吸收层直接接触的单个缓冲层;以及
在所述形成单个缓冲层的步骤之后,非本征地掺杂所述单个缓冲层;
在所述单个缓冲层上方形成与所述单个缓冲层直接接触的正面接触层。
2.根据权利要求1所述的方法,其中,所述非本征地掺杂所述单个缓冲层的步骤包括对所述单个缓冲层进行退火。
3.根据权利要求1所述的方法,其中,所述非本征地掺杂所述单个缓冲层的步骤包括在包括掺杂剂的大气环境中对所述单个缓冲层进行退火。
4.根据权利要求3所述的方法,其中,所述大气环境包括由硼(B)、铝(Al)、镓(Ga)、铟(In)或它们的组合组成的组中的至少一种。
5.根据权利要求3所述的方法,其中,所述大气环境包括B2H6。
6.根据权利要求3所述的方法,其中,在介于70℃至400℃的温度范围内实施所述退火。
7.根据权利要求6所述的方法,其中,在170℃的温度下实施所述退火10分钟。
8.根据权利要求3所述的方法,还包括在所述单个缓冲层上方形成正面接触层,其中,所述非本征地掺杂所述单个缓冲层和形成所述正面接触层的步骤均在同一腔室中实施。
9.根据权利要求8所述的方法,其中,所述形成所述正面接触层的步骤包括金属有机化学汽相沉积。
10.一种制造太阳能电池的方法,包括:
通过选自由原子层沉积、溅射、电沉积、蒸发或化学汽相沉积组成的组中的单个非化学浴沉积工艺在光伏器件的吸收层上方形成与所述吸收层直接接触的单个缓冲层;以及
非本征地掺杂所述单个缓冲层;
在所述单个缓冲层上方形成与所述单个缓冲层直接接触的正面接触层。
11.根据权利要求10所述的方法,其中,所述非本征地掺杂所述单个缓冲层的步骤包括对所述单个缓冲层进行退火。
12.根据权利要求10所述的方法,其中,所述非本征地掺杂所述单个缓冲层的步骤包括在包括掺杂剂的大气环境中对所述单个缓冲层进行退火。
13.根据权利要求12所述的方法,其中,所述大气环境包括B2H6。
14.根据权利要求13所述的方法,其中,在170℃的温度下实施所述退火10分钟。
15.根据权利要求12所述的方法,还包括在所述单个缓冲层上方形成正面接触层,其中,所述非本征地掺杂所述单个缓冲层和形成所述正面接触层的步骤均在同一腔室中实施。
16.根据权利要求15所述的方法,其中,所述形成所述正面接触层的步骤包括金属有机化学汽相沉积。
17.根据权利要求10所述的方法,还包括在所述单个缓冲层上方形成正面接触层,其中:
所述非本征地掺杂所述单个缓冲层和形成所述正面接触层的步骤均在同一腔室中实施;
所述非本征地掺杂所述单个缓冲层的步骤包括在170℃的温度下在包括B2H6的大气环境中退火所述单个缓冲层10分钟;以及
所述形成所述正面接触层的步骤包括金属有机化学汽相沉积。
18.根据权利要求17所述的方法,还包括:
在包括玻璃、塑料或金属箔的衬底上方形成钼的背面接触层;
在所述背面接触层上方形成所述吸收层,其中,所述吸收层包括由铜(Cu)、镓(Ga)、铟(In)、铝(Al)、硒(Se)、硫(S)或它们的组合组成的组中的至少一种,其中,
所述单个缓冲层包括由CdS、ZnS、ZnO、ZnSe或它们的组合组成的组中的至少一种。
19.一种制造太阳能电池的方法,包括:
通过单个非化学浴沉积方法在光伏器件的吸收层上方形成与所述吸收层直接接触的单个缓冲层;
在形成所述单个缓冲层的步骤之后,在具有含有掺杂剂的大气环境的腔室中对所述单个缓冲层进行退火;以及
在实施所述退火的同一腔室中在所述单个缓冲层上形成与所述单个缓冲层直接接触的正面接触层。
20.根据权利要求19所述的方法,其中:
在170℃的温度下在包括B2H6的大气环境中退火所述单个缓冲层10分钟,以及
所述形成所述正面接触层的步骤包括金属有机化学汽相沉积。
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