TWI611591B - 形成緩衝層之方法 - Google Patents

形成緩衝層之方法 Download PDF

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TWI611591B
TWI611591B TW104126805A TW104126805A TWI611591B TW I611591 B TWI611591 B TW I611591B TW 104126805 A TW104126805 A TW 104126805A TW 104126805 A TW104126805 A TW 104126805A TW I611591 B TWI611591 B TW I611591B
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吳志力
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台灣積體電路製造股份有限公司
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Abstract

一種形成緩衝層之方法，包括：形成緩衝層於光伏裝置的吸收層之上；以及在上述形成步驟後，外部地摻雜緩衝層。

Description

形成緩衝層之方法
本揭露係關於薄膜光伏電池的製造。
太陽能電池是一種藉由光伏效應(photovoltaic effect)從太陽光產生電流的電子裝置，薄膜太陽能電池具有一或多層光伏材料之薄膜沉積於基底上，光伏材料薄膜的厚度可為奈米或微米尺寸。
吸收層吸收太陽光並將其轉換成電流，例如：作為太陽能電池的吸收層之薄膜光伏材料包括硒化銅銦鎵(CIGS)及碲化鎘(CdS)。太陽能電池也包括前接觸層及背接觸層以協助捕捉太陽光、提取光電流(photo-current)及提供太陽能電池的電性接觸。前接觸層通常包括透明導電氧化(transparent conductive oxide,TCO)層，透明導電氧化層傳送太陽光至吸收層並傳導透明導電層平面之電流。有一些太陽能電池包括介於吸收層及透明導電氧化層之間的緩衝層，而相較於沒有緩衝層的太陽能電池，具有緩衝層的相似太陽能電池可增加電池效率及增加開路電壓(open circuit voltage,Voc)、短路電流(short circuit current,Jsc)及填充因子(fill factor,FF)。
合適的緩衝層(例如：硫化鎘(CdS)及硫化鋅(ZnS)) 已被使用於高效率的硒化銅銦鎵太陽能電池，緩衝層作為n型材料，以與p型之硒化銅銦鎵或硫化鎘形成p-n接合，通常以硫化鎘及硫化鋅為基底之緩衝層是利用化學浴沉積(chemical bath deposition,CBD)製備，由於其成本低、製程簡單以及具有可擴充性(scalability)。
在一些實施例中，一種形成緩衝層之方法，包括：形成緩衝層於光伏裝置的吸收層之上；以及在上述形成步驟後，外部地(extrinsically)摻雜緩衝層。
在一些實施例中，一種形成緩衝層之方法包括：藉由一製程以形成緩衝層於光伏裝置的吸收層上，上述製程擇自由原子層沉積、電沉積、濺鍍沉積、蒸鍍及化學氣相沉積所組成之群組；以及外部地摻雜緩衝層。
在一些實施例中，一種形成緩衝層之方法包括：形成緩衝層於光伏裝置的吸收層之上；在上述形成步驟後，在含有摻質之氣氛下，對緩衝層實行退火製程；以及在與實行退火製程相同之腔室中，形成前接觸層於緩衝層上。
10~18‧‧‧製造太陽能電池的步驟
24~28‧‧‧製造太陽能電池的步驟
100‧‧‧太陽能電池板
110‧‧‧太陽能電池基底
120‧‧‧背接觸層
130‧‧‧吸收層
140‧‧‧緩衝層
150‧‧‧前接觸層
170‧‧‧集合區
172‧‧‧內連線結構
402‧‧‧Tauc plot圖中圓圈
403‧‧‧Tauc plot圖中延伸線
404‧‧‧Tauc plot圖中三角形
405‧‧‧Tauc plot圖中延伸線
500‧‧‧金屬有機化學氣相沉積腔室
504‧‧‧傳送裝置
506‧‧‧第一噴嘴
508‧‧‧第二噴嘴
P1~P3‧‧‧切割線
以下將配合所附圖式詳述本發明之實施例，應注意的是，依照工業上的標準實施，以下圖示並未按照比例繪製，事實上，可能任意的放大或縮小元件的尺寸以便清楚表現出本發明的特徵。而在說明書及圖式中，除了特別說明外，同樣或類似的元件將以類似的符號表示。
第1圖係本揭露一些實施例中，太陽能電池的剖面圖； 第2圖係本揭露一些實施例中，製造如第1圖所示之太陽能電池的方法流程圖；第3圖係本揭露一些實施例中，例如第2圖所示方法之流程圖；第4圖係本揭露描述之未經摻雜的緩衝層以及經摻雜的緩衝層之Tauc plot圖，其表示未經摻雜的緩衝層以及經摻雜的緩衝層的光學特性；第5圖係金屬有機化學氣相沉積(MOCVD)腔室之示意圖，其用以摻雜如第1圖所示之緩衝層；第6圖係本揭露一些實施例中，經修飾的緩衝層之摻雜濃度曲線圖。
以下公開許多不同的實施方法或是例子來實行本發明之不同特徵，以下描述具體的元件及其排列的例子以闡述本發明。當然這些僅是例子且不該以此限定本發明的範圍。例如，在描述中提及第一個元件形成一第二個元件上時，其可以包括第一個元件與第二個元件直接接觸的實施例，也可以包括有其他元件形成於第一個與第二個元件之間的實施例，其中第一個元件與第二個元件並未直接接觸。此外，在不同實施例中可能使用重複的標號或標示，這些重複僅為了簡單清楚地敘述本揭露，不代表所討論的不同實施例及/或結構之間有特定的關係。
此外，其中可能用到與空間相關的用詞，像是“在...下方”、“下方”、“較低的”、“上方”、“較高的” 及類似的用詞，這些關係詞係為了便於描述圖示中一個(些)元件或特徵與另一個(些)元件或特徵之間的關係，這些空間關係詞包括使用中或操作中的裝置之不同方位，以及圖示中所描述的方位。裝置可能被轉向不同方位(旋轉90度或其他方位)，則其中使用的空間相關形容詞也可相同地照著解釋。
在光伏電池中，光生電子洞對(photo-generated electron-hole pair)在空乏區(depletion region)內分離，空乏區內有p-n接合所形成之內建(built-in)電位。為了擴大空乏區以增進接合的品質，增加緩衝層之載子濃度是需要的，可藉由外部摻雜(extrinsic doping)(例如：以硼摻雜)修飾緩衝層以達到此目的，經修飾之緩衝層可提供較佳之基底表面讓透明導電氧化物形成，因而加強了緩衝層及透明導電氧化層之間的附著性。
若緩衝層是藉由化學浴沉積形成，則緩衝層的載子濃度可藉由改變化學浴沉積的製程條件(例如：水浴溫度及離子比例)加以調整，摻雜摻質(dopant)至溶液中可增加緩衝層的載子濃度。在此描述的其它實施例中，緩衝層的外部摻雜可延伸至非經化學浴沉積處理之緩衝層，例如，以下描述之方法可用於外部地摻雜藉由，例如：原子層沉積(atomic layer deposition,ALD)、濺鍍沉積(sputtering)、電沉積(electro-deposition)、蒸鍍(evaporation)及化學氣相沉積(chemical vapor deposition,CVD)，所形成之緩衝層。
此揭露係描述太陽能電池及其形成方法，其中該太陽能電池之緩衝層首先係藉由任一合適的方法形成，接著外 部地摻雜該緩衝層。在一些實施例中，外部摻雜係由在一選定之氣氛(atmosphere)下將緩衝層退火(anneal)而實行，且上述步驟在與沉積前接觸透明導電氧化(TCO)材料之相同的有機金屬化學氣相沉積(metal organic chemical vapor deposition,MOCVD)儀器中實行。因此，緩衝層可被外部地摻雜無論緩衝層是藉由化學氣相沉積、原子層沉積、濺鍍沉積、電沉積、蒸鍍或化學氣相沉積所形成。
第1圖顯示一些實施例中，太陽能電池板100在前接觸形成後的配置。第1圖所示之太陽能電池板的部分包括內連線結構172，其提供鄰近的兩個太陽能電池的電池板100之間的串聯。在第1圖中，為求清楚，內連線結構172的寬度相對於集合區(collection region)170之寬度被刻意放大，然而集合區170實際上比內連線結構172寬許多。
太陽能電池100包括太陽能電池基底110、背接觸層120、吸收層130、緩衝層140及前接觸層150。
基底110可包括任何適合之材料，例如：玻璃。在一些實施例中，基底110包括玻璃基底，例如：鈉鈣玻璃(soda lime glass)、或具有彈性的金屬箔或是高分子(例如：聚亞醯胺(polyimide)、聚對苯二甲酸乙二酯(PET)、聚萘二甲酸乙二醇酯(PEN))。在其它實施例中尚包括其它基底材料。
背接觸層120包括任何合適的背接觸材料，例如：金屬。在一些實施例中，背接觸層120可包括鉬(Mo)、鉑(Pt)、金(Au)、銀(Ag)、鎳(Ni)或銅(Cu)。在其它實施例中尚包括其它背接觸材料。在一些實施例中，背接觸層120的厚度大約為 50nm至2μm。
在一些實施例中，吸收層130包括任何合適的吸收材料，例如：p型半導體。在一些實施例中，吸收層130可包括黃銅礦基(chalcopyrite-based)材料，例如包括：Cu(In,Ga)Se2(CIGS)、CdTe、CuInSe2(CIS)、CuGaSe2(CGS)、Cu(In,Ga)(Se,S)2(CIGSS)、或是非晶矽。在其它實施例中尚包括其它吸收層材料。在一些實施例中，吸收層130的厚度大約為0.3μm至8μm。
緩衝層140沉積於吸收層130上以形成p-n接觸。緩衝層140可包括任何合適的緩衝材料，例如n型半導體。在一些實施例中，緩衝層140可包括：CdS、ZnS、ZnSe、In2S3、In2Se3、或Zn1-xMgxO(例如：ZnO)或上述之組合。在其它實施例中尚包括其它緩衝材料。在一些實施例中，緩衝層140的厚度大約為1nm至500nm。
在一些實施例中，緩衝層140是由下述之步驟進行外部地摻雜。在一些實施例中，摻質為硼。在一些實施例中，摻質在緩衝層之中的分布被控制為位置相關的(position dependent)，例如，緩衝層的頂表面(透明導電氧化層及緩衝層之間的介面)及底表面(緩衝層及吸收層之間的介面)間的摻質濃度可以是不同的。第6圖為此述例子，經修飾之緩衝層140的摻雜濃度曲線之示意圖，在緩衝層140及前接觸層150間的介面之摻質濃度最高，在靠近緩衝層140及前接觸層150間的介面之摻質濃度下降地最快，而越遠離緩衝層140及前接觸層150間的介面，摻質濃度改變的速率較小。
在一些實施例中，前接觸層150包括經退火之透明 導電氧化(TCO)層，其具有約100nm或更大之固定的厚度。“前接觸”及“透明導電氧化層”在此可替換地使用；前者是關於層150之功能，而後者是關於其組成。在一些實施例中，導電氧化層150的電荷載子密度可約為1x1017cm-3至1x1021cm-3。作為退火透明導電氧化層的透明導電氧化材料可包括合適的前接觸材料，例如，金屬氧化物及金屬氧化物的前驅物。在一些實施例中，透明導電氧化物材料可包括：AZO、GZO、AGZO、BZO等，(AZO：鋁摻雜氧化鋅(alumina doped ZnO)、GZO：鎵摻雜氧化鋅(gallium doped ZnO)、AGZO：鋁鎵摻雜氧化鋅(alumina and gallium doped ZnO)、BZO：硼摻雜氧化鋅(boron doped ZnO))。在另一些實施例中，透明導電氧化材料可以是氧化鎘(CdO)、氧化銦(In2O3)、二氧化錫(SnO2)、氧化鉭(Ta2O5)、鎵銦氧化物(GaInO3)、(CdSb2O3)或氧化銦錫(ITO)。透明導電氧化材料也可用合適的摻質進行摻雜。
在一些實施例中，在摻雜的透明導電氧化層150中，二氧化錫可用Sb、F、As、Nb或Ta進行摻雜。在一些實施例中，氧化鋅可用Al、Ga、B、In、Y、Sc、F、V、Si、Ge、Ti、zr、Hf、Mg、As或H任一種進行摻雜。在另一些實施例中，氧化銦(In2O3)可用Sn、Mo、Ta、W、Zr、F、Ge、Nb、Hf或Mg進行摻雜。在另一些實施例中，氧化鎘可由銦或錫進行摻雜。在另一些實施例中，GaInO3可由錫或鍺進行摻雜。在另一些實施例中，CdSb2O3可由釔進行摻雜。在另一些實施例中，ITO可由錫做摻雜。其他實施例更包括其他透明導電氧化物及對應的摻質。
在一些實施例中，複數個太陽能電池100被排列為彼此鄰近，使每個太陽能電池的前接觸150傳導電流至鄰近的太陽能電池。每個太陽能電池100包括內連線結構172用以傳遞電荷載子由一太陽能電池的前接觸150至相同面板上鄰近的下一個太陽能電池的背接觸120。集合區170中提供層120、130、140及150，內連線結構172也包括三線，稱作P1、P2及P3，P1切割線延伸通過背接觸層140且被填入吸收材料130；P2切割線延伸通過緩衝層140及吸收層130，且與鄰近的下一個太陽能電池之背接觸120接觸，因而形成相鄰電池間的串聯；P3切割線延伸通過前接觸層150、緩衝層140及吸收層130，鄰近太陽能電池的P3切割線緊接著為太陽能電池100的集合區170的左側。
切割線P3分隔鄰近太陽能電池的前接觸層150、緩衝層140及吸收層130，使得每一個前接觸能夠藉由P2切割線，傳導電流至鄰近的下一個太陽能電池之背接觸，且不會造成鄰近的前接觸之間短路。
第2圖為一些實施例中製造太陽能電池的方法之流程圖。
於步驟10，背接觸120形成於太陽能電池基底110之上。背接觸層可藉由物理氣相沉積，例如：濺鍍沉積金屬，像是鉬、銅或鎳於基底之上，或藉由化學氣相沉積或原子層沉積或其他合適的方法進行。接著P1切割線通過背接觸層120形成，例如：切割線可藉由機械性切割形成，或藉由雷射或其它合適的切割製程形成。面板100中的每一個太陽能電池分別具有P1切割線。
於步驟12，吸收層130形成於背接觸層120之上，吸收層130可藉由物理氣相沉積(例如：濺鍍沉積)、化學氣相沉積、原子層沉積、電化學沉積或其他合適的方法進行。例如，硒化銅銦鎵吸收層可藉濺鍍沉積包括：銅、銦及鎵的金屬膜，接著對金屬膜實行硒化步驟而形成。
於步驟14，緩衝層140藉由任意適合的方法形成於吸收層130之上。例如，緩衝層140可藉由化學沉積(例如：化學浴沉積或化學水浴沉積)、物理氣相沉積、原子層沉積、濺鍍沉積、蒸氣化學氣相沉積(evaporation CVD)或其它合適的方法進行。在形成緩衝層以後，形成P2切割線，其完全地延伸通過緩衝層140及吸收層130。
於步驟16，在形成緩衝層步驟14之後，外部地(extrinsically)摻雜緩衝層140。在一些實施例中，外部地摻雜緩衝層140的步驟16包含：在包括摻質的氣氛下，對緩衝層實行退火製程。在一些實施例中，上述氣氛包括至少一擇自由以下所組成之群組：硼(B)、鋁(Al)、鎵(Ga)、銦(In)及其組合。在一些實施例中，上述氣氛包括B2H6。
在一些實施例中，退火製程在約70℃至400℃之溫度範圍實行，例如在一些實施例中，退火溫度可為68℃、72℃、395℃或405℃。在一些實施例中，退火溫度可約為170℃，例如：溫度可為167℃或173℃。
在一些實施例中，緩衝層是由硫化鎘(或硫化鋅)所形成，氣氛包括B2H6，且選擇退火溫度及時間以達到摻質/鎘(或摻質/鋅)的摻質濃度比例是在10-3至9x10-1的範圍中。未 經摻雜的硫化鎘之電荷載子濃度約為1016/cc，經摻雜的硫化鎘之電荷載子濃度可約在範圍1017/cc至1018/cc。在一些實施例中，在溫度約為170℃時，約10分鐘內可達到目標摻雜濃度。例如在一些實施例中，退火時間為9分鐘或11分鐘。在一些實施例中，此摻雜濃度可提供光學能帶間隙(optical bandgap)的能量增加0.05eV。在另一些實施例中，使用較低的退火溫度加上較長的退火時間。
在一些實施例中，步驟16是在適合進行金屬有機化學氣相沉積(MOCVD)之腔室中實行。
於步驟18，前接觸層150形成於緩衝層140之上，上述緩衝層在吸收層130之上。此步驟包括：沉積前接觸材料(透明導電氧化物)於緩衝層140之上。在一些實施例中，外部地摻雜緩衝層140的步驟16及形成前接觸層150的步驟18皆在同一儀器中實行。在一些實施例中，沉積前接觸材料的步驟18包括：化學氣相沉積(例如：金屬有機化學氣相沉積)。在另一些實施例中，前接觸材料的沉積是藉由低壓化學氣相沉積(LPCVD)或電漿化學氣相沉積(PECVD)實行。
在一些實施例中，步驟16及18皆在單一個製程儀器的相同腔室中實行。在另一些實施例中，步驟16及步驟18在相同儀器中的兩個不同腔室中實行，而自動化裝置(robotic device)在第一腔室(實行退火的地方)及第二腔室(沉積透明導電氧化材料的地方)之間移動基底110，且不會在步驟16及18之間破壞儀器中的真空。
在一些實施例中，前接觸150容許至少50%的入射 光子(incident photon)穿透前接觸150。
第3圖為在一些實施例中，第2圖所示方法之例子的流程圖。
第3圖的步驟10及12可與第2圖的步驟10及12相同，為了使描述簡潔，便不再重複描述。
於步驟24，在一些實施例中，緩衝層140是由非化學水浴沉積(non-CBD)方法形成，例如：原子層沉積、濺鍍沉積、電化學沉積、蒸鍍或化學氣相沉積。由於此述之方法包括分開的、非化學水浴沉積步驟的摻雜，此述之方法可以，但非一定要，包括藉由化學水浴沉積形成緩衝層。
於步驟26，藉由退火製程外部地摻雜緩衝層140，上述退火製程在金屬有機化學氣相沉積(MOCVD)腔室中B2H6的氣氛下進行。在一些實施例中，退火製程在約170℃之溫度下實行約10分鐘。
於步驟28，前接觸150藉由金屬有機化學氣相沉積形成於外部摻雜的緩衝層上，而前接觸150的形成與退火製程在同一腔室中實行。
第4圖為硫化鎘膜在未經由第3圖所示之方法進行外部摻雜，以及經由第3圖所示之方法進行外部摻雜之Tauc plot圖。準備好的硫化鎘膜形成於裸玻璃(bare glass)上，且首先被移至金屬有機化學氣相沉積(MOCVD)腔室中，接著硫化鎘膜在170℃及B2H6的氣氛下實行退火10分鐘。
第4圖之Tauc plot可用以判斷薄膜材料(例如：硫化鎘)或其它緩衝層材料之光學能帶間隙(optical bandgap)。圓圈 402對應於未經摻雜的硫化鎘膜之數據，而三角形404對應於經外部摻雜的硫化鎘膜之數據。圖中之橫坐標顯示hν(光的光學能)的值，(αhν)2(光學密度)的值則標示於縱坐標，其中α為材料的吸收係數。
第4圖的Tauc plot皆有具有線性區域，其代表吸收的開始，延伸此線性區域至橫軸標代表材料的光學能帶間隙，圖中分別顯示未經摻雜的膜及經外部摻雜的膜404之延伸線403及405。因此，第4圖所標示的數據中，未經摻雜的硫化鎘的光學能帶間隙約為2.33eV，而經外部摻雜的硫化鎘約為2.38eV。由(αhν)2與hν的圖可知，能帶間隙往高能量的移動表示摻雜作用以及意味著硼結合至如404三角形所示之硫化鎘膜。即，摻雜步驟可藉由在包含想要的摻質之氣氛中實行退火製程，用以調整緩衝層的載子濃度及光學能帶間隙，而能帶間隙增加的量可藉由調控摻雜程度加以控制。
第5圖為用以外部地摻雜如第1圖所示的緩衝層之金屬有機化學氣相沉積腔室500之示意圖。提供太陽能電池基底於工作台表面(例如：平台或傳送裝置504)上。在一些實施例中，腔室500具有複數個噴嘴(nozzle)，用以分別地施放材料於腔室之中。例如，第5圖所示的第一噴嘴506用以施放摻雜材料(例如：B2H6)至金屬有機化學氣相沉積腔室500之中，以及第二噴嘴508用以施放透明導電氧化材料(例如：氧化銦錫(ITO))至金屬有機化學氣相沉積腔室500之中以形成前接觸層150，在摻雜以及形成前接觸的步驟之間並不需要破壞真空。在另一實施例中(圖未示)，傳送裝置504(或自動化裝置)在相同儀器中的不 同工作台之間移動太陽能電池100，用以分別地摻雜及施用透明導電氧化材料。
藉由增加緩衝層的光學能帶間隙，可進而增加太陽能陣列(用以吸收入射光)之效率，短路電流Jsc可相應地增加。載子濃度的增加亦可提升緩衝層140的導電度，因此，可降低太陽能電池的整體串聯電阻。另一方面，透過本發明，緩衝層與前接觸的介面可以獲得改善，進而增加此介面的附著力。
在此描述之方法，在沉積緩衝層之後，實行額外的外部摻雜步驟於太陽能電池的緩衝層上。在一些實施例中，外部摻雜步驟是在包含想要之摻質的氣氛下，對緩衝層實行退火步驟。在一些實施例中，退火製程在用以實行接續的透明導電氧化材料沉積之相同的有機金屬化學氣相沉積腔室中實行，上述透明導電氧化材料的沉積是用以形成太陽能電池的前接觸。
藉由外部摻雜增加緩衝層140之載子濃度具有許多利於改善太陽能電池的效能之理由，例如，由於經摻雜的緩衝層的導電度提升，裝置的電阻可因而降低。再者，經摻雜的緩衝層140增加之載子濃度有助於改善開路電壓(open-circuit voltage)Voc。此外，可藉由緩衝層140增加的載子濃度減少位於硫化鎘/硒化銅銦鎵介面(緩衝層/吸收層)之介面復合(interface recombination)，進而改善接合品質，同時，硫化鎘膜增加的光學能帶間隙可提高光電流。外部摻雜步驟可在與用以準備透明導電氧化物相同之金屬有機化學氣相沉積儀器中 實行，因此不需耗費額外的裝置或設備成本。由於摻雜緩衝層及沉積前接觸透明導電氧化材料使用單一儀器，打破真空或移動基底於用以摻雜的儀器以及沉積透明導電氧化物的儀器之間並不會產生延遲。
前述內文概述了許多實施例的特徵，使本技術領域中具有通常知識者可以更佳的了解本發明的各個方面。本技術領域中具有通常知識者應該可理解，他們可以很容易的以本發明為基礎來設計或修飾其它製程及結構，並以此達到相同的目的及/或達到與本發明介紹的實施例相同的優點。本技術領域中具有通常知識者也應該了解這些相等的結構並不會背離本發明的發明精神與範圍。本發明可以作各種改變、置換、修改而不會背離本發明的發明精神與範圍。
雖然本發明已以數個較佳實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作任意之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
10~18‧‧‧製造太陽能電池的步驟

Claims (7)

  1. 一種形成緩衝層的方法，包括：形成一緩衝層於一光伏裝置之吸收層之上；以及在上述形成步驟後，外部地(extrinsically)摻雜該緩衝層，其中外部地摻雜該緩衝層之步驟包括：在一包括摻質之氣氛(atmosphere)下，對該緩衝層實行一退火製程，其中該氣氛包括至少一擇自由下列所組成之群組：硼(B)、鋁(Al)、鎵(Ga)、銦(In)及其組合。
  2. 如申請專利範圍第1項所述之形成緩衝層的方法，其中該氣氛包括B2H6。
  3. 如申請專利範圍第1項所述之形成緩衝層的方法，其中該退火製程在約70℃至400℃之溫度範圍實行。
  4. 如申請專利範圍第3項所述之形成緩衝層的方法，其中該退火製程在約170℃之溫度下實行約10分鐘。
  5. 如申請專利範圍第1項所述之形成緩衝層的方法，更包括：形成一前接觸層於該緩衝層上，其中外部地摻雜該緩衝層之步驟及形成該前接觸層之步驟係在同一腔室中實行。
  6. 如申請專利範圍第5項所述之形成緩衝層的方法，其中形成該前接觸層之步驟包括：金屬有機化學氣相沉積(MOCVD)。
  7. 如申請專利範圍第1項所述之形成緩衝層的方法，更包括形成一前接觸層於該緩衝層上，其中：外部地摻雜該緩衝層之步驟及形成該前接觸層之步驟係在同一腔室中實行；外部地摻雜該緩衝層之步驟包括：在一包含B2H6之氣氛 下，對該緩衝層實行該退火製程，其中該退火製程在溫度約170℃下實行約10分鐘；形成該前接觸層之步驟包括金屬有機化學氣相沉積；形成一由鉬所組成之背接觸層在一基底上，該基底包括玻璃、塑膠或金屬箔；以及形成該吸收層於該背接觸層上，該吸收層包括至少一種擇自由下列所組成之群組：銅(Cu)、鎵(Ga)、銦(In)、鋁(Al)、硒(Se)、硫(S)及其組合，其中該緩衝層包括至少一種擇自由下列所組成之群組：CdS、ZnS、ZnO、ZnSe及其組合。
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