CN104115278B - 太阳能电池及其制造方法 - Google Patents

太阳能电池及其制造方法 Download PDF

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CN104115278B
CN104115278B CN201280070022.4A CN201280070022A CN104115278B CN 104115278 B CN104115278 B CN 104115278B CN 201280070022 A CN201280070022 A CN 201280070022A CN 104115278 B CN104115278 B CN 104115278B
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李真宇
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Abstract

本发明公开了一种太阳能电池及其制造方法。所述太阳能电池包括在支撑基板上的钼层、在钼层上的欧姆层、在欧姆层上的光吸收层、以及在光吸收层上的前电极层，其中，欧姆层包含具有互不相同的晶体结构的第一欧姆层和第二欧姆层。

Description

太阳能电池及其制造方法
技术领域
本发明涉及一种太阳能电池及其制造方法。
背景技术
太阳能电池可以定义为利用光入射到P-N结二极管上时产生电子的光伏效应将光能转换为电能的装置。根据构成结型二极管的材料，太阳能电池可以分类为硅太阳能电池、主要包含I-III-VI族化合物或者III-V族化合物的化合物半导体太阳能电池、染料敏化太阳能电池以及有机太阳能电池。
由CIGS(CuInGaSe)(CIGS是I-III-VI族基于黄铜矿的化合物半导体之一)制成的太阳能电池，呈现出优异的光吸收性、较高的光电转换效率并且厚度薄、以及优异的光电稳定性，因此CIGS太阳能电池作为传统硅太阳能电池的替代品而引起关注。
一般来说，CIGS薄膜太阳能电池通过依次形成包含钠(Na)的基板、背电极层、光吸收层、缓冲层以及前电极层来制造。一般来说，背电极层由钼(Mo)制成，并且在硒(Se)环境下以及450℃或以上的温度下进行热处理，从而形成MoSe2层。MoSe2层用作电极，并且在图案化过程中减小施加到钼电极的损坏。
发明内容
技术问题
实施例提供一种包括具有低电阻和优异机械强度的欧姆层的太阳能电池及其制造方法。
技术方案
根据实施例，提供一种太阳能电池，其包括：在支撑基板上的钼层、在钼层上的欧姆层、在欧姆层上的光吸收层、以及在光吸收层上的前电极层，其中，欧姆层包括具有互不相同的晶体结构的第一欧姆层和第二欧姆层。
根据实施例，提供一种太阳能电池的制造方法，其包括：在支撑基板上形成钼层；在钼层上形成欧姆层，所述欧姆层包括具有互不相同的晶体结构的多个层、；在欧姆层上形成光吸收层；以及在光吸收层上形成前电极层。
有益效果
根据实施例所述的太阳能电池，利用MoSe2制备的欧姆层设置在背电极层上。欧姆层可以包括与c轴水平并具有较低接触电阻的晶体表面，也包括与c轴垂直并具有优异机械强度的晶体表面。因此，根据实施例所述的太阳能电池，电阻Rs减小并且填充因子增大，从而可以提高光电转换效率和机械强度。
附图说明
图1到图5是剖视图，示出了实施例所述的太阳能电池的制造方法。
具体实施方式
在实施例的描述中，应该明白，当某一基板、层、膜、或者电极被称作是在另一基板、另一层、另一膜或者另一电极“之上”或者“之下”时，它可以是“直接”或“间接”地在该另一基板、层、膜或电极之上或之下，或者也可以存在一个或更多的中间层。层的这种位置已经参照附图进行了描述。为了说明的目的，附图所示元件的尺寸可以夸大，并且可以不完全反映实际的尺寸。
图1到图5是剖视图，示出了实施例所述的太阳能电池的制造方法。在下文中，第一实施例所述的太阳能电池及其制造方法将参照图1到图5进行描述。
参照图1，背电极层200在基板100上形成。支撑基板100具有平板形状并且支撑背电极层200、光吸收层400、缓冲层500、高阻层600以及前电极层700。
支撑基板100可以包括绝缘体。支撑基板100可以包括玻璃基板、塑料基板或者金属基板。更详细地讲，支撑基板100可以包括钠钙玻璃基板。支撑基板100可以是透明的。支撑基板100可以是刚性的或柔性的。
背电极层200可以通过物理气相沉积(PVD)方法或者电镀方法在支撑基板100上形成。
背电极层200是导电层。背电极层200可以包括钼(Mo)、金(Au)、铝(Al)、铬(Cr)、钨(W)、以及铜(Cu)中的至少一种。背电极层200可以包括Mo。Mo具有与支撑基板100相似的热膨胀系数，因此Mo可以提高粘合性并且防止背电极层200与支撑基板100层离，以及完全满足背电极层200要求的特性。就是说，优选地，背电极层200为Mo层。
参照图2，欧姆层300在Mo层200上形成。欧姆层300可以包括MoSe2。欧姆层300可以制备为包括具有互不相同的晶体结构的多层的复合层。
更详细地讲，欧姆层300可以包括布置在支撑基板100上的第一欧姆层310以及布置在第一欧姆层310上的第二欧姆层320。例如，第一欧姆层310可以包括与MoSe2晶体的c轴水平的晶体表面，而第二欧姆层320可以包括与MoSe2晶体的c轴垂直的晶体表面。
第一欧姆层310作为与Mo层200直接接触的区域，并且根据能量势垒的接触电阻比机械强度更重要。相应地，实施例所述的第一欧姆层310上形成有晶体表面与c轴水平并电阻优异的MoSe2，并且MoSe2与Mo层200相邻。
因此，根据实施例所述的太阳能电池，电阻Rs减小并且填充因子增大，从而可以提高光电转换效率和机械强度。
此外，第二欧姆层320为光吸收层400直接在其上面形成的区域，并且重要的是第二欧姆层320吸收在包括光吸收层400的多个层沉积和图案化过程中发生的损害。如此，实施例所述的第二欧姆层320包括晶体表面垂直于c轴并且机械强度优异的MoSe2。相应地，在实施例所述的太阳能电池中，机械强度可以得到提高。
欧姆层300可以通过硒化Mo层200来形成。更详细地讲，欧姆层300可以通过制备光吸收层400的硒化过程来形成。在实施例所述的太阳能电池的制造方法中，如上述描述，具有互不相同的晶体表面的多个欧姆层310和320通过改变硒化过程的条件来制备。这将在下面连同光吸收层400的制备方法进行详细地描述。
参照图3，光吸收层400布置在欧姆层300上。
光吸收层400包括I-III-VI族化合物。例如，光吸收层400可以具有CIGSS(Cu(In,Ga)(Se,S)2)晶体结构、CISS(Cu(In)(Se,S)2)晶体结构或者CGSS(Cu(Ga)(Se,S)2)晶体结构。光吸收层400的能带隙可以在约1.0eV到约1.8eV范围内。
例如，光吸收层400可以通过各种方法来形成，例如通过同时或分别蒸发Cu、In、Ga和Se形成基于Cu(In,Ga)Se2(CIGS)的光吸收层400的方法，以及在形成了金属前体层之后进行硒化过程的方法。
如上述描述，实施例所述的欧姆层300可以通过硒化过程来形成。光吸收层400可以通过溅射方法或者蒸发方法来形成。至于在形成金属前体层之后的硒化过程的细节，采用Cu靶、In靶、或Ga靶通过溅射过程在背电极层200上形成金属前体层。然后，金属前体层经历硒化过程，从而形成基于Cu(In,Ga)Se2(CIGS)的光吸收层400。
同时，欧姆层300可以形成在背电极层200的一部分上。更详细地讲，第一欧姆层310和第二欧姆层320可以通过改变温度条件而具有互不相同的晶体结构。例如，第一欧姆层310可以通过在约400℃到约500℃范围内的温度下硒化Mo层200来形成，而第二欧姆层320可以通过在约500℃到约600℃范围内的温度下硒化Mo层200来形成，但本实施例不限于此。
例如，第一欧姆层310可以通过在约400℃到约500℃范围内的温度下硒化Mo层200来形成，而第二欧姆层320可以通过在约500℃到约600℃范围内的温度下硒化Mo层200来形成，但本实施例不限于此。
参照图4，缓冲层500设置在光吸收层400上。根据太阳能电池、CIGS化合物，P-N结在作为P型半导体的CIGS或者CIGSS化合物薄膜的光吸收层400和作为N型半导体的前电极层700之间形成。然而，由于两种材料之间在晶格常数和能带隙上呈现出很大差异，具有在两种材料的带隙之间的中间带隙的缓冲层对在这两种材料之间形成理想的结是必需的。缓冲层500可以具有约10nm到约30nm范围内的厚度，但本实施例不限于此。
缓冲层500可以包括硫化镉(CdS)、硫化锌(ZnS)、InXSY、以及InXSeYZn(O,OH)。优选地，缓冲层500可以为硫化锌(ZnS)。
高阻缓冲层600布置在缓冲层500上。高阻缓冲层600可以包括iZnO，iZnO是不掺杂杂质的氧化锌。高阻缓冲层600可以通过溅射过程在缓冲层500上沉积氧化锌来形成。
参照图5，前电极层700在高阻缓冲层600上形成。前电极层700为透明的导电层。例如，前电极层700可以包括掺B氧化锌(ZnO：B，BZO)、掺Al氧化锌(AZO)，或者掺Ga氧化锌(GZO)。更详细地讲，通过考虑带隙和与缓冲层500的接触，前电极层700可以使用掺Al氧化锌(AZO)或者掺B氧化锌(ZnO：B，BZO)，但本实施例不限于此。
前电极层700可以通过在高阻缓冲层500上沉积透明导电材料来形成。更详细地讲，前电极层700可以通过溅射方法或者金属有机化学气相沉积(MOCVD)方法来沉积。例如，前电极层700可以通过溅射过程来沉积。
在本说明书中每提及“一个实施例”，“某个实施例”，“示例性实施例”等时意味着，结合该实施例描述的具体特征、结构、或特性包含在本发明的至少一个实施例中。在本说明书中不同地方出现的此类短语不一定都是指同一实施例。另外，当结合某一实施例描述具体的特征、结构、或特性时，应当认为，结合其它实施例实现该特征、结构或特性落入本领域技术人员的能力范围内。
虽然参照本发明的若干说明性实施例描述了实施例，但应该知道，本领域技术人员可以构思出很多其它的变型和实施例，这些变型和实施例落入本发明原理的精神和范围内。更具体地讲，在本发明公开、附图和所附权利要求书的范围内，可以对主题组合结构的组成部分和/或排列作出各种改变和变型。除了所述组成部分和/或排列的改变和变型之外，替代用途对于本领域技术人员而言也是显然的。

Claims (6)

1.一种太阳能电池，包括：
在支撑基板上的钼层；
在所述钼层上的欧姆层；
在所述欧姆层上的光吸收层；以及
在所述光吸收层上的前电极层，
其中，所述欧姆层包括具有互不相同的晶体结构的第一欧姆层和第二欧姆层，
其中，所述第一欧姆层和所述第二欧姆层包括MoSe2，
其中，所述第一欧姆层包括与MoSe2晶体的c轴水平的晶体表面，
其中，所述第一欧姆层与所述钼层直接接触，
其中，所述第二欧姆层包括与所述MoSe2晶体的c轴垂直的晶体表面。
2.如权利要求1所述的太阳能电池，其中，所述第二欧姆层与所述光吸收层直接接触。
3.一种太阳能电池的制造方法，该方法包括：
在支撑基板上形成钼层；
在所述钼层上形成欧姆层，所述欧姆层包括具有互不相同的晶体结构的多个层；
在所述欧姆层上形成光吸收层；以及
在所述光吸收层上形成前电极层，
其中，所述欧姆层包括MoSe2，
其中，形成所述欧姆层包括：
在所述钼层上形成第一欧姆层；以及
在所述第一欧姆层上形成第二欧姆层，
其中，所述第一欧姆层包括与MoSe2晶体的c轴水平的晶体表面，
其中，所述第二欧姆层包括与所述MoSe2晶体的c轴垂直的晶体表面。
4.如权利要求3所述的方法，其中，所述第一欧姆层通过在400℃到500℃范围内的温度下硒化所述钼层来形成。
5.如权利要求3所述的方法，其中，所述第二欧姆层通过在500℃到600℃范围内的温度下硒化所述钼层来形成。
6.如权利要求3所述的方法，其中，所述欧姆层的形成和所述光吸收层的形成是同时进行的。
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