CN103222039A - 半导体元件、半导体装置以及半导体元件的制造方法 - Google Patents

半导体元件、半导体装置以及半导体元件的制造方法 Download PDF

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CN103222039A
CN103222039A CN2011800548330A CN201180054833A CN103222039A CN 103222039 A CN103222039 A CN 103222039A CN 2011800548330 A CN2011800548330 A CN 2011800548330A CN 201180054833 A CN201180054833 A CN 201180054833A CN 103222039 A CN103222039 A CN 103222039A
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semiconductor element
metal
layer
metal level
structure portion
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大津健嗣
楠卓
山田朗
黑岩丈晴
多留谷政良
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Abstract

本发明的目的在于得到一种半导体元件，具有电极，该电极即使半导体元件在高温下、特别是175℃以上动作的情况下，半导体元件和金属纳米粒子烧结层也能够稳定地密接充分长时间。具有电极，该电极具备：含Ni金属层（4），形成于半导体元件构造部的至少一个面侧且包含Ni；Ni阻挡金属层（5），在含Ni金属层（4）的与半导体元件构造部相反的一侧的外侧形成；以及表面金属层（6），在Ni阻挡金属层（5）的与半导体元件构造部相反的一侧的外侧形成，且将与金属纳米粒子烧结层（9）连接，Ni阻挡金属层（5）含有降低Ni向表面金属层（6）的扩散的金属。

Description

半导体元件、半导体装置以及半导体元件的制造方法
技术领域
本发明涉及在高温下动作的半导体元件的电极构造。
背景技术
关于在高温下动作的半导体元件（应对高温动作的半导体元件），除了以元件单体被封装的情况以外，还有时安装于安装基板而动作。为了使该在高温下动作的半导体元件和安装基板能够稳定地长时间接合，提出了多个用于对在高温下动作的半导体元件和安装基板进行接合的半导体元件背面的电极构造。另外，在通常范围的温度下动作的半导体元件和安装基板的接合中，为了焊料中的无Pb（铅）化、低温接合化，有时还通过Sn（锡）基焊料、金属纳米粒子膏等来进行接合。在高温下动作的半导体元件中，也提出了很多用于使用Sn基焊料、金属纳米粒子膏等来接合该半导体元件和安装基板的半导体元件背面的电极构造。
Sn基焊料主要用于半导体元件的低温接合，被期待为无Pb焊料。金属纳米粒子膏是以金属纳米粒子为主要成分、熔点或者烧结温度能够低温化为几百℃以下的膏。
在专利文献1中，记载了在以Si（硅）为主体的半导体基板中，依次层叠了Ni（镍）硅化物层、Ti（钛）层（第1金属层）、Ni层（第2金属层）、Au（金）层（第3金属层）的半导体元件的背面电极构造。专利文献1是与用于抑制半导体元件背面的Ni硅化物层（欧姆电极）剥离的半导体基板以及制造方法相关的文献。专利文献1的背面电极构造的特征在于，在以Si为主体的半导体基板中依次层叠了第1Ni层、Ti层、第2Ni层、Au层之后，通过将Ni硅化物层的形成温度降低为100～300℃，在Ni硅化物层的与基板相反的一侧残留Ni层，并且降低对在该残留的Ni层上层叠的金属层施加的应力，而提高与基板的密接性。
专利文献1：日本特开2009－49144号公报（图4）
发明内容
但是，在通过金属纳米粒子膏将具有上述电极构造的半导体元件与安装基板接合了的情况下，在上述电极构造中，由于在安装基板上安装之后的高温动作，Ni层（第2金属层）的Ni和Au层（第3金属层）的Au相互扩散，与金属纳米粒子烧结层没有密接性的Ni层在电极的表面层的Au层的最表面露出，所以半导体元件的电极和金属纳米粒子烧结层难以得到再现性良好并且充分的接合强度。本发明是为了解决上述那样的课题而完成的，其目的在于得到一种半导体元件，该半导体元件具有电极，该电极使得即使半导体元件在高温下特别是175℃以上的温度下动作的情况下，半导体元件和金属纳米粒子烧结层也能够稳定地密接充分长时间。
本发明提供的半导体元件具有电极，该电极具备：含Ni金属层，在半导体元件构造部的至少一个面侧形成且包含Ni；Ni阻挡金属层，在含Ni金属层的与半导体元件构造部相反的一侧的外侧形成；以及表面金属层，在Ni阻挡金属层的与半导体元件构造部相反的一侧的外侧形成，且将与金属纳米粒子烧结层连接，Ni阻挡金属层包含降低Ni向表面金属层的扩散的金属。
根据本发明，在半导体元件的电极内插入了包含使Ni的扩散降低的金属的Ni阻挡金属层，所以能够在将半导体元件安装到安装基板之后的高温动作时，在半导体元件与金属纳米粒子烧结层之间，实现长时间稳定的密接强度。
附图说明
图1是本发明的实施方式1的半导体元件的电极的剖面示意图。
图2是说明本发明的实施方式1的半导体装置的制造方法的图。
图3是示出Ni的扩散系数的阿列纽斯（Arrhenius）图的图。
图4是将本发明的实施例以及比较例中的结果一览示出的图。
图5是说明本发明的实施方式1的半导体装置的250℃保持后的电极构造的图。
图6是说明比较例中的半导体装置的250℃保持后的电极构造的图。
（符号说明）
1：半导体元件；2：金属硅化物层；3：第1金属层（密接金属层）；4：第2金属层（含Ni金属层）；5：第3金属层（Ni阻挡金属层）；6：第4金属层（表面金属层）；9：金属纳米粒子烧结层；15：安装基板；20：半导体装置。
具体实施方式
实施方式1.
图1是本发明的实施方式1的半导体元件的电极的剖面示意图。图2是说明本发明的实施方式1的半导体装置的制造方法的图。半导体元件1是肖特基二极管、MOS（Metal Oxide Semiconductor，金属氧化物半导体）晶体管、双极性晶体管等功率半导体元件等。本发明能够应用于在半导体元件的电极形成部中形成包含金属硅化物的多层构造的电极的半导体元件。半导体元件1在半导体基板11的一个表面，依次形成了金属硅化物层2、第1金属层3、第2金属层4、第3金属层5、第4金属层6。另外，在形成电极之前，在半导体基板11中，形成了半导体元件1的半导体元件构造部、即肖特基二极管、MOS晶体管、双极性晶体管等的除了电极的构造。在图中，省略了半导体元件1的半导体元件构造部。
在本实施方式1中，作为半导体基板11使用了碳化硅基板。作为该碳化硅基板，无需特别限定，能够使用公知的碳化硅基板。能够在该碳化硅基板的至少一个表面、即具有电极形成部的一个表面，通过溅射法等公知的方法，作为第1金属层3、第2金属层4、第3金属层5、第4金属层6，分别形成Ti层、Ni层、Cu层、Au层等金属层。所形成的金属层的各自的厚度没有特别限定，结合所制造的半导体元件1的大小适宜调整即可，但一般是10nm至2000nm以下。
在调查、研究半导体元件的电极构造的特性而开发半导体元件的电极构造时，能够使用在未形成可动作的半导体元件的半导体基板上依次形成了金属硅化物层2、第1金属层3、第2金属层4、第3金属层5、第4金属层6的结构。以后，关于半导体元件1，以使用在未形成可动作的半导体元件的半导体基板11上设置了电极构造的结构的情况进行说明。
说明半导体元件1的电极制造方法。在碳化硅基板11的一个表面，以规定的厚度、例如厚度50nm形成用于形成金属硅化物层2的金属层，之后在真空气氛下在与该金属硅化物层对应的条件下进行热处理，从而形成所述规定的厚度程度（例如50nm程度）的金属硅化物层2（金属硅化物层形成工序）。
使用溅射法等，在金属硅化物层2的表面，形成成为与金属硅化物层2密接的密接层的第1金属层（密接金属层）3（第1金属层形成工序、密接金属层形成工序）。在第1金属层3的与基板面侧相反的面侧，使用溅射法等，形成包含Ni的第2金属层（含Ni金属层）4（第2金属层形成工序、含Ni金属层形成工序）。在第2金属层4的与基板面侧相反的面侧，使用溅射法等，形成包含Cu的第3金属层（Ni阻挡金属层）5（第3金属层形成工序、Ni阻挡金属层形成工序）。在第3金属层5的与基板面侧相反的面侧，使用溅射法等，形成作为表面金属层的包含贵金属的第4金属层6（第4金属层形成工序、表面金属层形成工序）。
关于形成第1金属层3的金属，能够使用Ti、Cr（铬）、Ta（钽）、Nb（铌）、Mo（钼）、Zr（锆）中的某一个单金属、或者含有Ti、Cr、Ta、Nb、Mo、Zr中的至少1种的合金。关于第2金属层4，能够使用Ni金属、或者含有Ni的合金。关于第3金属层5，能够使用Cu金属、或者含有Cu的合金。关于第4金属层6，能够使用Au、Pt（铂）、Ag、Ir（铱）、Cu中的某一个单金属、或者含有Au、Pt、Ag、Ir、Cu中的至少1种的合金。
使用图2，说明本发明的实施方式1的半导体装置的制造方法。图2（a）是示出接合前的半导体元件以及安装基板的图，图2（b）是示出接合后的半导体装置的图。安装半导体元件1的安装基板15如以下那样制造。在基体板8的表面，使用具有规定的开口径的不锈钢掩模，通过印刷等形成金属纳米粒子膏层7，得到安装基板15（15a）。在金属纳米粒子膏层7的表面，搭载半导体元件1，得到接合前的半导体装置。针对上述得到的接合前的半导体装置，使用接合装置，在规定的压力下加压的同时，在规定的温度下保持规定的时间，从而金属纳米粒子膏层7中含有的金属纳米粒子彼此烧结，金属纳米粒子膏层7变化为金属纳米粒子烧结层9。之后，使其空冷，从而得到对具有金属纳米粒子烧结层9的安装基板15（15b）接合半导体元件1并密接了的半导体装置20。
关于形成金属纳米粒子膏层7的金属纳米粒子膏，能够使用Ag纳米粒子膏、Cu纳米粒子膏。
关于第3金属层5，能够使第2金属层4的Ni向第4金属层6的扩散降低，而成为Ni阻挡金属层。此处，说明第3金属层5的Cu作为Ni阻挡金属起作用的情况。图3是示出Ni的扩散系数的阿列纽斯图的图。纵轴是扩散系数D（cm2/s），横轴是绝对温度T的倒数、1000/T（K－1）。特性线31表示Ni与Au的相互扩散中的扩散系数的特性，特性线32表示Ni向Cu金属的扩散中的扩散系数的特性。特性线31的数据基于由P.W.Lees等著作的“INTERDIFFUSIONBETWEEN CONNECTOR CONTACT MATERIALS AND NICKELDIFFUSION BARRIERS DURING PRECIPITATION HARDENINGOF HIGH PERFORMANCE SPRING MATERIALS”、Proceedings ofthe Fortieth IEEE Holm Conference on Electrical Contacts（1994）189（文献1）中记载的图3（以后，示为图A）。特性线32的数据基于由A.M.Abdul－Lettif著作的“Investigation of interdiffusion incopper-nickel bilayer thin films”，Sience Direct Physica B388（2007）107（文献2）中记载的图3（以后，示为图B）。图3的白圆所示的数据是文献1的图A中的黑三角（Lees－Grain Boundary（晶界）（Plated（被电镀）））所示的数据，图3的黑圈所示的数据是文献1的图A中的×标志所示的数据。图3的白四角形所示的数据是文献2的图B中的黑菱形所示的数据。比较线33是使特性线31在纵轴方向上移动1/100而得到的。
表示在大致300℃（573K）下在上述文献1以及2中示出的扩散系数D。在文献1中，示出了315℃（588K）下的Ni与Au的相互扩散中的扩散系数是约1×10－13。相对于此，在文献2中，示出了300℃（573K）下的Ni向Cu金属的扩散中的扩散系数是4.3×10－16。在大致300℃（573K）下，Ni向Cu金属的扩散中的扩散系数相比于Ni与Au的相互扩散中的扩散系数成为约1/100倍。即，Ni向Cu的扩散相比于Ni向Au的扩散慢到约1/100倍。因此，通过在高温下动作的半导体元件的电极构造中插入Cu层，Cu层阻碍Ni向Cu层外侧（半导体元件的表面侧）的Au层（第4金属层6的1种）的扩散，而在实用的累积动作时间中在Au层与Ni层之间几乎不产生相互扩散。关于Cu层插入于Au层与Ni层之间的半导体元件的电极构造，由于能够使与金属纳米粒子烧结层9没有密接性的Ni层未形成于Au层的最表面，所以能够在Au层与金属纳米粒子烧结层9之间，维持长时间稳定的密接强度。
关于接触金属纳米粒子膏层7而构成在电极的最表面形成的第4金属层6的元素，除了Au以外，还能够使用Pt、Ag、Ir、Cu。即使构成第4金属层6的元素是Pt、Ag、Ir、Cu，通过在半导体元件的电极构造中插入Cu层，Cu层能够阻碍Ni向Cu层外侧的第4金属层6的扩散。因此，通过在半导体元件的电极构造中的第4金属层6与Ni层4之间插入Cu层6，能够使与金属纳米粒子烧结层9没有密接性的Ni层未形成于第4金属层6的最表面，所以能够在第4金属层6与金属纳米粒子烧结层9之间，维持长时间稳定的密接强度。
在图3中，在画出特性线31的全部温度范围内，特性线32的扩散系数D与比较线33大致相同或者成为其以下。因此，在画出特性线31的全部温度范围内，Ni向Cu的扩散比Ni向Au的扩散慢到约1/100倍。碳化硅基板中形成的半导体元件可在175℃（448K）以上的温度下动作，所以通过在碳化硅基板中形成的半导体元件可动作的范围内，在电极构造中的Au层与Ni层之间插入Cu层，能够在Au层与金属纳米粒子烧结层9之间，维持长时间稳定的密接强度。同样地，即使是包含Pt、Ag、Ir、Cu的第4金属层6，也能够在第4金属层6与金属纳米粒子烧结层9之间，维持长时间稳定的密接强度。
此前，以第2金属层（含Ni金属层）4形成于第1金属层（密接金属层）3的面，依次形成第3金属层（Ni阻挡金属层）5、第4金属层（表面金属层）6的情况进行了说明，但只要第3金属层（Ni阻挡金属层）5相比于第2金属层（含Ni金属层）4在与导体元件构造部相反的一侧形成于外侧即可。另外，第4金属层（表面金属层）6相比于第3金属层（Ni阻挡金属层）5在与导体元件构造部相反的一侧形成于外侧即可。即使是这样的电极构造，通过在半导体元件1的电极内具有包含使Ni的扩散降低的金属的Ni阻挡金属层5，能够使与金属纳米粒子烧结层9没有密接性的Ni层不会形成于第4金属层6的最表面，所以能够在将半导体元件1安装到安装基板15之后的高温动作时，在半导体元件1与金属纳米粒子烧结层9之间，实现长时间稳定的密接强度。
根据实施方式1的半导体元件，具有电极，该电极具备：含Ni金属层4，形成于半导体元件构造部的至少一个面侧且包含Ni；Ni阻挡金属层5，在含Ni金属层4的与半导体元件构造部相反的一侧的外侧形成；以及表面金属层6，在Ni阻挡金属层5的与半导体元件构造部相反的一侧的外侧形成且与金属纳米粒子烧结层9连接，Ni阻挡金属层5包含降低Ni向表面金属层6的扩散的金属，所以通过在半导体元件1的电极内具有包含使Ni的扩散降低的金属的Ni阻挡金属层，能够在将半导体元件1安装到安装基板15之后的高温动作时，在半导体元件1与金属纳米粒子烧结层9之间，实现长时间稳定的密接强度。
根据实施方式1的半导体装置，具备安装基板15、和隔着金属纳米粒子烧结层9而安装到安装基板15的半导体元件1，半导体元件1具有电极，该电极具备：含Ni金属层4，形成于半导体元件1中的半导体元件构造部的至少一个面侧且包含Ni；Ni阻挡金属层5，在含Ni金属层4的与半导体元件构造部相反的一侧的外侧形成；以及表面金属层6，在Ni阻挡金属层5的与半导体元件构造部相反的一侧的外侧形成且与金属纳米粒子烧结层9连接，Ni阻挡金属层5包含降低Ni向表面金属层6的扩散的金属，所以通过在半导体元件的电极内具有包含使Ni的扩散降低的金属的Ni阻挡金属层，将该半导体元件安装到安装基板的半导体装置能够在半导体元件与金属纳米粒子烧结层之间，实现长时间稳定的密接强度。
根据实施方式1的半导体元件的制造方法，包括：含Ni金属层形成工序，在半导体元件1中的半导体元件构造部的至少一个面侧，形成包含Ni的含Ni金属层4；Ni阻挡金属层形成工序，在含Ni金属层4的与半导体元件构造部相反的一侧的外侧形成Ni阻挡金属层5；以及表面金属层形成工序，在Ni阻挡金属层5中的与半导体元件构造部相反的一侧的外侧，形成与金属纳米粒子烧结层9连接的表面金属层6，Ni阻挡金属层5包含降低Ni向表面金属层6的扩散的金属，所以通过在半导体元件1的电极内具有包含使Ni的扩散降低的金属的Ni阻挡金属层，能够在将半导体元件1安装到安装基板15之后的高温动作时，在半导体元件1与金属纳米粒子烧结层9之间，实现长时间稳定的密接强度。
另外，关于应对高温动作的半导体元件，除了碳化硅（SiC）以外，还能够使用氮化镓系材料或者金刚石。例如，在作为开关元件、整流元件发挥功能的半导体元件1中，使用了碳化硅（SiC）、氮化镓系材料或者金刚石的情况下，相比于以往使用的由硅（Si）形成的元件，电力损失更低，所以能够实现电力用半导体装置等应对高温动作的半导体装置的高效化。另外，耐电压性高、且容许电流密度也高，所以能够使半导体装置小型化。进而，关于宽带隙半导体元件，耐热性高，所以能够实现高温动作，还能够实现散热器的散热片的小型化、水冷部的空冷化，所以能够使半导体装置进一步小型化。
实施例
以下，通过实施例详细说明本发明，但本发明不限于此。
[实施例1]
作为对半导体元件1进行模拟的例子，准备了厚度500μm的碳化硅基板。另外，也可以使用形成了规定的电路图案的碳化硅基板。作为用于形成金属硅化物层2的金属层，使用溅射法以厚度50nm形成镍层，之后在真空气氛下在800℃下进行1小时的热处理，从而能够形成厚度50nm程度的镍硅化物层。使用溅射法，依次如下进行：在金属硅化物层2的表面，作为第1金属层3，形成厚度200nm的Ti层，在Ti层表面，作为第2金属层4，形成厚度200nm的Ni层，在Ni层表面，作为第3金属层5，形成厚度200nm的Cu层，作为第4金属层6，在Cu层表面，形成厚度200nm的Au层。之后，通过切割工序，切断为5.0mm□（5.0mm平方、□意味着平方）尺寸并洗净，将所得到的部件用作半导体元件1。
接下来，准备安装半导体元件1的安装基板15。首先，关于基体板8，在面积10mm□、厚度1.0mm的Cu板表面实施了厚度5μm的Ag镀敷。在该基体板8的表面，使用开口径是6mm□、且厚度0.2mm的不锈钢掩模，作为金属纳米粒子膏层7，印刷Ag纳米粒子膏，在上述Ag纳米粒子膏层7的表面，搭载半导体元件1，而得到了接合前的半导体装置。作为Ag纳米粒子膏，能够使用例如DOWA公司制造T2W－A2。接合装置使用了Athlete（日文：アスリート）FA公司制造的加热压接设备（AP－100M）。针对上述得到的接合前的半导体装置，在100℃下进行了10min（分钟）期间的预热处理之后，进行5MPa的加压的同时使其升温至350℃，并在达到350℃之后保持5分钟，从而Ag纳米粒子膏中含有的Ag纳米粒子彼此烧结，形成金属纳米粒子烧结层9。之后，使其空冷，从而得到半导体装置20。制作了3个半导体装置20。
针对这样构成的半导体装置20，在250℃下高温保持1000h（小时），针对每200h，通过Dage公司制造的die-shear tester（日文：ダイシェアテスター）（模具剪切测试机）（HS4000）的剪切测定器进行了密接强度测定。关于密接强度判定，将30kgf/片以上视为无密接性异常，在小于30kgf/片时视为有强度降低。图4示出了测定结果。图4是将本发明的实施例以及比较例中的结果一览示出的图。另外，将后述比较例。如从图4可知，本实施例的插入了Cu层的样品（样品2－1、2－2、2－3）即使在经过1000h之后，仍未发现密接强度降低。
针对经过1000h之后的样品（样品2－1、2－2、2－3），使用波长分散型X射线分析进行了半导体元件电极的元素分析。Ni层4的Ni向Au层6侧的扩散通过Cu层5的插入而被阻碍。因此，关于实施例1的半导体装置20，在250℃下保持了1000h之后，如图5所示，仍未发现电极构造的变化。图5是说明本发明的实施方式1的半导体装置的250℃保持后的电极构造的图。图5（a）示出高温保持前的半导体装置20，图5（b）示出高温保持后的半导体装置20。
[比较例1]
通过以下的方法制作了与实施例1的样品进行比较的比较样品。在厚度500μm的碳化硅基板11的一个表面，通过与实施例1相同的方法，形成了厚度50nm程度的镍硅化物层（金属硅化物层2）。使用溅射法，依次如下进行：在金属硅化物层2的表面，作为第1金属层3，形成厚度200nm的Ti层，作为第2金属层4，在Ti层表面，形成厚度200nm的Ni层，作为第3金属层6，在Ni层表面，形成厚度200nm的Au层。之后，通过切割工序切断为5.0mm□尺寸并洗净，将所得到的部件用作半导体元件35（35a、参照图6）。半导体装置的制造方法与实施例1相同。制作了3个将半导体元件35安装到安装基板15（15b）的半导体装置40（40a、参照图6）。
针对这样构成的半导体装置40（40a），与实施例1同样地，在250℃下高温保持1000h，针对每200h，通过Dage公司制造的模具剪切测试机（HS4000）的剪切测定器，进行了密接强度测定。如图4所示，与实施例1不同，未插入Cu层6的比较例的样品在200h出现密接强度降低（样品1－1、1－3）。图6是说明比较例1的半导体装置的250℃保持后的电极构造的图。图6（a）示出高温保持前的半导体装置40（40a），图6（b）示出高温保持后的半导体装置40（40b）。
针对经过200h之后的样品（样品1－1、1－3），使用波长分散型X射线分析，进行了半导体元件电极的元素分析。在经过了200h之后密接强度降低了的元件电极的元素分析中，与实施例1不同，Ni层4的Ni和Au层6的Au相互扩散，在Au最表面检测到Ni元素。因此，关于比较例1的半导体装置40b，在250℃下保持了200h之后，如图6所示，发现电极构造的变化。即，高温保持前的半导体装置40a中的Ni层（第2金属层）4的Ni和Au层（第4金属层）6的Au相互扩散，形成了第2金属层的金属（Ni）和第3金属层的金属（Au）的扩散层（相互扩散层）10。高温保持后的半导体装置40b成为其电极构造具有金属硅化物层2、第1金属层3、相互扩散层10的多层构造。

Claims (11)

1.一种将隔着金属纳米粒子烧结层而安装到安装基板的半导体元件，其特征在于，具有电极，该电极具备：
含Ni金属层，在该半导体元件中的半导体元件构造部的至少一个面侧形成且包含Ni；
Ni阻挡金属层，在所述含Ni金属层的与所述半导体元件构造部相反的一侧的外侧形成；以及
表面金属层，在所述Ni阻挡金属层的与所述半导体元件构造部相反的一侧的外侧形成，且将与所述金属纳米粒子烧结层连接，
所述Ni阻挡金属层包含降低所述Ni向所述表面金属层的扩散的金属。
2.根据权利要求1所述的半导体元件，其特征在于，具备：
金属硅化物层，形成于所述半导体元件构造部的至少一个表面；以及
密接金属层，形成于所述金属硅化物层的与所述半导体元件构造部相反的一侧的表面，
所述含Ni金属层形成于所述密接金属层的与所述半导体元件构造部相反的一侧的表面。
3.根据权利要求1或者2所述的半导体元件，其特征在于，
所述Ni阻挡金属层包含Cu。
4.根据权利要求3所述的半导体元件，其特征在于，
所述Ni阻挡金属层由Cu金属、或者含有Cu的合金构成。
5.根据权利要求1至4中的任意一项所述的半导体元件，其特征在于，
所述表面金属层包含贵金属。
6.根据权利要求5所述的半导体元件，其特征在于，
所述表面金属层含有Au、Pt、Ag、Ir、Cu的单金属或者1种以上。
7.根据权利要求2至6中的任意一项所述的半导体元件，其特征在于，
所述密接金属层含有Ti、Cr、Ta、Nb、Mo、Zr中的至少1种。
8.根据权利要求1至7中的任意一项所述的半导体元件，其特征在于，
所述半导体元件构造部由宽带隙半导体材料形成。
9.根据权利要求8所述的半导体元件，其特征在于，
所述宽带隙半导体材料是碳化硅、氮化镓系材料、或者金刚石中的任一个。
10.一种半导体装置，其特征在于，
具备安装基板、和隔着金属纳米粒子烧结层而安装到所述安装基板的半导体元件，
所述半导体元件是权利要求1至9中的任意一项所述的半导体元件。
11.一种半导体元件的制造方法，是将隔着金属纳米粒子烧结层而安装到安装基板的半导体元件的制造方法，其特征在于，包括：
含Ni金属层形成工序，在所述半导体元件中的半导体元件构造部的至少一个面侧，形成包含Ni的含Ni金属层；
Ni阻挡金属层形成工序，在所述含Ni金属层的与所述半导体元件构造部相反的一侧的外侧形成Ni阻挡金属层；以及
表面金属层形成工序，在所述Ni阻挡金属层的与所述半导体元件构造部相反的一侧的外侧，形成将与所述金属纳米粒子烧结层连接的表面金属层，
所述Ni阻挡金属层包含降低所述Ni向所述表面金属层的扩散的金属。
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