CN110431657A - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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Publication number
CN110431657A
CN110431657A CN201880018674.0A CN201880018674A CN110431657A CN 110431657 A CN110431657 A CN 110431657A CN 201880018674 A CN201880018674 A CN 201880018674A CN 110431657 A CN110431657 A CN 110431657A
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China
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metal
layer
thickness
semiconductor device
nanoparticle
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CN201880018674.0A
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谷垣刚司
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Mitsubishi Corp
Mitsubishi Electric Corp
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Mitsubishi Corp
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Publication of CN110431657A publication Critical patent/CN110431657A/zh
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Abstract

在将电子部件之间经由金属纳米粒子烧结层而电接合的半导体装置中，构成在所述电子部件的表面所设置的敷金属层的金属进行扩散而在所述金属纳米粒子烧结层的内部形成在TEM‑EDS分析中所述金属存在10质量％以上且不到100质量％的金属扩散区域，使所述金属扩散区域的厚度比所述敷金属层的厚度小。

Description

半导体装置及其制造方法
技术领域
本发明涉及半导体装置及其制造方法。
背景技术
近年来，进行有使用氮化硅(SiC)、氮化镓(GaN)等可高温工作的半导体元件的半导体装置的开发。在这样的半导体装置中，将电子部件之间、例如半导体元件与电路基板用高接合强度接合变得必要。作为形成接合强度优异的接合部的技术，已知使用金属纳米粒子接合材料通过加热加压来将电子部件之间接合的方法。
例如，在专利文献1中，公开有半导体模块的制造方法，其包含：在基材的表面具有导体层的配线基板的该导体层表面涂布包含粒度分布中具有2个峰的银系金属粉和溶剂的糊剂而形成糊剂层的工序；使该糊剂层的溶剂干燥、在配线基板形成银系金属粉的保持层的工序；将具有该保持层的配线基板加热、使构成保持层的银系金属粉之间接合、形成连续气泡分散的银多孔体层的工序；使有机银络合物溶液浸渍于该银多孔体层、形成银多孔体的有机银络合物浸渍层的工序；将半导体元件载置于该银多孔体的有机银络合物浸渍层后、将具有该银多孔体的有机银络合物浸渍层的配线基板加热、将该有机银络合物溶液还原、形成接合层的工序。
在专利文献2中，公开有具有将2个电极间电连接的接合层的电子部件的制造方法，其包含如下工序：在用纯金或金合金所形成的电极的表面，将包含氧化铜、铜盐的水合物和溶剂的接合材料涂布于进行接合的部位、通过进行加热而使该铜盐的水合物热分解、将该氧化铜还原。
在专利文献3中，公开有半导体装置的制造方法，其包含：将包含各个粒子表面被有机物被覆的Ag纳米粒子和各个粒子表面被有机物被覆且硬度比Ag高的金属X纳米粒子的接合材料配置于进行接合的电子部件间、进行加热处理，由此使Ag纳米粒子和金属X纳米粒子烧结、形成金属X分散于Ag基体中的接合层。
进而，如专利文献2及3中所记载，认为：在该技术领域中，为了以更高的接合强度来将电子部件之间接合，优选在接合界面附近积极地形成金属扩散区域。
现有技术文献
专利文献
专利文献1：国际公开第2014/002949号
专利文献2：日本特开2016-32051号公报
专利文献3：日本特开2012-124497号公报
发明内容
发明要解决的课题
但是，就使金属纳米粒子烧结而成的接合层而言，由于比纯金属脆，因此不耐受反复的冷热冲击，在垂直方向上产生裂纹以致将电子部件间连接。得知：就垂直方向的裂纹而言，虽然不会对半导体装置的通电性及散热性产生大的影响，但如果对接合界面进一步施加冷热冲击，则在接合界面附近的金属扩散区域中引起向水平方向(平面方向)的裂纹发展。该水平方向的裂纹使电子部件间断裂，因此存在着招致半导体装置的通电性及散热性恶化的课题。
因此，本发明为了解决上述课题而完成，目的在于：提供即使施加反复的冷热冲击也能够抑制水平方向的裂纹发展的具有高接合可靠性的半导体装置。
进而，本发明的目的还在于提供具有高接合可靠性的半导体装置的制造方法。
用于解决课题的手段
本发明人为了解决上述课题而深入研究，结果发现：使构成在电子部件的表面所设置的敷金属层(メタライズ層)的金属扩散至金属纳米粒子烧结层的内部而形成的金属扩散区域的厚度比敷金属层的厚度小，由此能够抑制水平方向的裂纹发展，完成本发明。
即，本发明为半导体装置，是将电子部件之间经由金属纳米粒子烧结层而电接合的半导体装置，其特征在于，在上述金属纳米粒子烧结层的内部，构成在上述电子部件的表面所设置的敷金属层的金属进行扩散而形成在TEM-EDS分析中上述金属存在10质量％以上且不到100质量％的金属扩散区域，上述金属扩散区域的厚度比上述敷金属层的厚度小。予以说明，本说明书中，所谓电子部件，是指构成半导体装置的半导体元件、电路基板、引线框、散热构件等。
另外，本发明为半导体装置的制造方法，是将电子部件之间经由金属纳米粒子烧结层而电接合的半导体装置的制造方法，其特征在于，具备如下工序：对在上述电子部件的表面所设置的敷金属层实施氧等离子体处理或氮等离子体处理后，通过利用加热加压的上述接合，使构成上述敷金属层的金属向上述金属纳米粒子烧结层的内部扩散而形成具有比上述敷金属层的厚度小的厚度的金属扩散区域。
发明的效果
根据本发明，能够提供：即使施加反复的冷热冲击也能够抑制水平方向的裂纹发展的具有高接合可靠性的半导体装置。另外，根据本发明，能够提供具有高接合可靠性的半导体装置的制造方法。
附图说明
图1为根据实施方式1的半导体装置的示意截面图。
图2为根据实施方式1的半导体装置中的金属纳米粒子烧结层附近的部分放大截面图。
图3为根据实施方式1的半导体装置中的金属纳米粒子烧结层的TEM-EDS分析结果。
图4为根据实施方式2的具备等离子体处理后的敷金属层的半导体元件的示意截面图。
图5为根据实施方式4的半导体装置中的金属纳米粒子烧结层的TEM-EDS分析结果。
图6为冷热冲击试验后的实施例1的半导体装置中的敷金属层与Ag纳米粒子烧结层的界面的超声波探伤图像。
图7为示意地表示冷热冲击试验后的金属纳米粒子烧结层内的裂纹的产生状况的图。
图8为表示实施例及比较例中制作的半导体装置(敷金属层的厚度：100nm)的金属扩散区域的厚度与裂纹面积率的关系的坐标图。
图9为表示实施例及比较例中制作的半导体装置(敷金属层的厚度：50nm)的金属扩散区域的厚度与裂纹面积率的关系的坐标图。
具体实施方式
实施方式1.
图1为根据实施方式1的半导体装置的示意截面图。如图1中所示，在根据实施方式1的半导体装置中，将在电路基板1的表面所设置的金属电极2与在半导体元件3的表面所设置的敷金属层4经由金属纳米粒子烧结层5而电接合。
作为电路基板1的材质，只要是在半导体装置中作为电路基板而一般使用的材质，则并无特别限定，例如可列举出氮化硅(Si3N4)、氮化铝(AlN)、铜钼合金等。
就金属电极2而言，只要是在半导体装置中作为电极而一般使用的金属电极，则并无特别限定，例如能够用Cu、Ni或以这些金属作为主体的合金来形成。另外，就金属电极2而言，也可以是在Cu及Ni以外的金属表面使用镀敷、溅射等手法形成有Cu膜或Ni膜的电极。就金属电极2而言，与金属纳米粒子烧结层5的厚度相比，需要具有足够厚的厚度(具体地，金属纳米粒子烧结层5的厚度的5倍以上的厚度)，优选具有0.3mm以上的厚度。金属电极2的厚度通常为1mm以下。
作为半导体元件3，可列举出二极管、MOSFET(金属氧化物半导体场效应晶体管，Metal Oxide Semiconductor Field-Effect-Transistor)、IGBT(绝缘栅双极晶体管，Insulated Gate Bipolar Transistor)、硅可控整流器等。就根据实施方式1的半导体装置而言，由于在高温工作环境下发挥其性能，因此适合使用带隙比硅(Si)宽的材料例如碳化硅(SiC)、氮化镓(GaN)系材料和金刚石的宽带隙半导体材料的半导体元件。
就敷金属层4而言，能够用Au、Ag、Cu、Ni、Ti、Co、Pd、Pt或以这些金属作为主体的合金来形成。敷金属层4的厚度通常为1nm以上且500nm以下。
就金属纳米粒子烧结层5而言，通过将糊剂在金属电极2或敷金属层4上涂布而形成金属纳米粒子层后将其烧结而形成，所述糊剂含有用烃系、胺系、醇系等有机保护材料将Au、Ag、Cu、Ni或以这些金属作为主体的合金的纳米粒子的表面被覆而成的有机被覆金属纳米粒子和溶剂。具体地，就金属纳米粒子烧结层5而言，能够通过一边对上述金属纳米粒子层施加0.1MPa以上且50MPa以下的压力一边在200℃以上且350℃以下的温度下加热30秒以上且30分钟以下来使其烧结。如果考虑实际的大量生产，加热时间优选设为10分钟以下。金属纳米粒子烧结层5的厚度通常为0.01mm以上且0.2mm以下。作为金属纳米粒子，从化学上稳定且容易处理的方面考虑，优选Ag纳米粒子及Ag合金纳米粒子。作为用于进行糊化的溶剂，可列举出如丙醇的醇、苯、丙酮、甲苯、二甲苯、醚、石油醚等。对涂布上述糊剂的方法并无特别限定，可列举出丝网印刷、分配器涂布等。
图2为根据实施方式1的半导体装置中的金属纳米粒子烧结层5附近的部分放大截面图。如图2中所示，在金属纳米粒子烧结层5内的与敷金属层4相接的侧，以规定的厚度形成:构成敷金属层4的金属通过烧结时的加热而扩散的金属扩散区域11。另外，在金属纳米粒子烧结层5内的与金属电极2相接的侧，形成：构成金属电极2的金属通过烧结时的加热而扩散的金属扩散区域11’。在将该金属扩散区域11定义为在TEM-EDS分析中构成敷金属层4的金属存在10质量％以上且不到100质量％的区域时，根据实施方式1的半导体装置中，将金属扩散区域11的厚度设定得比敷金属层4的厚度小。通过这样使金属扩散区域11的厚度比敷金属层4的厚度小，即使施加反复的冷热冲击，也能够抑制水平方向的裂纹发展，能够制成具有高接合可靠性的半导体装置。另外，金属扩散区域11’的厚度为1nm以上且不到100nm。就金属扩散区域11及金属扩散区域11’的厚度而言，能够通过改变使金属纳米粒子层烧结时的压力、加热温度及加热时间(接合时间)而控制。图3为用TEM-EDS来分析使敷金属层4为厚度200nm的Au、使金属纳米粒子层烧结时的压力为5MPa、使加热温度为300℃、使加热时间为5分钟、使用Ag纳米粒子以厚度0.05mm形成金属纳米粒子烧结层5时的金属纳米粒子烧结层5内部的Au的扩散状态的结果。其中的金属扩散区域11的厚度由TEM-EDS分析结果能够求出为110nm。从进一步抑制水平方向的裂纹发展的方面考虑，金属扩散区域11的厚度优选为1nm以上且不到100nm。
另外，在半导体元件3的表面所设置的敷金属层4的厚度小的情况下，具体地，为不到100nm的情况下，优选不仅改变使金属纳米粒子层烧结时的压力、加热温度及加热时间(接合时间)、而且采用后述的实施方式2～4的构成，由此控制金属扩散区域11的厚度。
予以说明，在实施方式1中，以将在电路基板1的表面所设置的金属电极2与在半导体元件3的表面所设置的敷金属层4经由金属纳米粒子烧结层5而电接合的半导体装置为例来进行说明，只要是将电子部件之间经由金属纳米粒子烧结层5而电接合的半导体装置，则并不限定于此。
实施方式2.
就根据实施方式2的半导体装置而言，控制金属扩散区域11的厚度的方法与实施方式1不同。即，在实施方式2中，将实施方式1中所说明的糊剂涂布于敷金属层4上之前，对敷金属层4预先实施氧等离子体处理或氮等离子体处理，由此控制金属扩散区域11的厚度。
就氧等离子体处理或氮等离子体处理而言，能够通过在O2等离子体气氛、N2等离子体气氛或它们的混合气体的等离子体气氛下将敷金属层4暴露其中而实施。N2等离子体将最外表面蚀刻而使活性的面露出、在大气中的室温环境下形成薄的金属氧化膜。另外，O2等离子体将最外表面蚀刻而使活性的面露出、同时在最外表面形成薄金属氧化膜。就N2与O2的混合气体的等离子体而言，使两者的性能显现。此时的等离子体发生装置的频率只要为100kHz以上且2.45GHz以下即可，但为了抑制对半导体元件3的损伤，优选用13.56MHz以上的高频带来进行等离子体处理。在最外表面所形成的薄金属氧化膜具有1nm～100nm左右的厚度。图4为具备等离子体处理后的敷金属层4的半导体元件3的示意截面图。如果通过等离子体处理来形成薄的金属氧化膜12，则在使金属纳米粒子层烧结时，由于形成薄的金属氧化膜12被除去后来进行接合的工艺，因此需要直至形成金属扩散区域11(直至构成敷金属层4的金属扩散到金属纳米粒子烧结层5内部)的长的加热时间(烧结时间)。因此，金属扩散区域11的生长(金属扩散区域11的厚度的增大)受到抑制。进而，在等离子体处理后的敷金属层4的表面，形成1μm以下的微细的凹凸。就该微细的凹凸而言，由于在与半导体元件3的界面处成为水平方向的裂纹发展的障碍，因此与没有实施等离子体处理的平坦的敷金属层4的情况相比，水平方向的裂纹发展受到抑制。
其他构成由于与实施方式1相同，因此省略说明。
实施方式3.
就根据实施方式3的半导体装置而言，控制金属扩散区域11的厚度的方法与实施方式1不同。即，在实施方式3中，在实施方式1中所说明的烧结前的金属纳米粒子层涂布具有100℃以上且350以下的沸点的烃系溶剂或醇系溶剂，由此控制金属扩散区域11的厚度。
如实施方式1中所说明，将形成金属纳米粒子层时所使用的金属纳米粒子的表面用有机保护材料被覆。该有机被覆通常以在100℃以上的温度下燃烧的方式设计，与有机被覆的燃烧同时地，开始金属纳米粒子的烧结反应。因此，预先将具有与有机被覆的燃烧开始的温度相同或者其以上的沸点的有机溶剂涂布(滴入)到烧结前的金属纳米粒子层，由此在开始金属纳米粒子的烧结的同时或者稍晚地，有机溶剂气化，随着该气化，在与金属纳米粒子烧结层5的界面提供敷金属层4及金属电极2的活性的面。就该有机溶剂而言，由于在达到沸点之前抑制金属扩散区域11的生长(金属扩散区域11的厚度的增大)，因此金属扩散区域11的厚度受到控制。
作为使用的有机溶剂，优选具有80℃以上且350℃以下的沸点的烃系溶剂或醇系溶剂。作为此种有机溶剂的具体例，可列举出庚烷(C7H16、沸点98℃)、辛烷(C8H18、沸点126℃)、壬烷(C9H20、沸点151℃)、癸烷(C10H22、沸点174℃)、十一烷(C11H24、沸点196℃)、十二烷(C12H26、沸点216℃)、十三烷(C13H28、沸点230℃)、十四烷(C14H30、沸点251℃)、十五烷(C15H32、沸点268℃)、十六烷(C16H34、沸点280℃)、十七烷(C17H36、沸点303℃)等烷烃、将这些烷烃中的1个氢用1个羟基(-OH)取代而成的醇。这些有机溶剂可单独地使用，或者也可将2种以上混合使用。予以说明，这些有机溶剂气化时有时附着于电路基板1的周围，但它们能够用清洗剂容易地除去。作为清洗剂，酸性、中性及碱性的清洗剂均可，如果考虑对半导体元件3的影响，优选中性(pH值为6～9之间)的清洗剂。
其他构成由于与实施方式1相同，因此省略说明。
实施方式4.
就根据实施方式4的半导体装置而言，控制金属扩散区域11的厚度的方法与实施方式1不同。即，在实施方式4中，用与金属纳米粒子烧结层5的金属难以相互扩散的金属来形成敷金属层4，由此控制金属扩散区域11的厚度。
如果金属的种类不同，则金属的原子半径也不同，因此存在容易扩散到母材金属的金属和难以扩散到母材金属的金属。例如，在使用Ag纳米粒子或Ag合金纳米粒子作为金属纳米粒子来形成金属纳米粒子烧结层5的情况下，就敷金属层4而言，优选用作为难以与Ag或Ag合金相互扩散的金属的Cu、Ni、Ti、Co、Pd、Pt或它们的合金来形成。通过用此种金属来形成敷金属层4，构成敷金属层4的金属变得难以在金属纳米粒子烧结层5的内部扩散，因此金属扩散区域11的生长(金属扩散区域11的厚度的增大)受到抑制。图5为采用TEM-EDS来分析使敷金属层4为厚度200nm的Cu、使将金属纳米粒子层烧结时的压力为5MPa、使加热温度为300℃、使加热时间为30分钟、使用Ag纳米粒子以厚度0.05mm形成金属纳米粒子烧结层5时的金属纳米粒子烧结层5内部的Cu的扩散状态的结果。这样由于Ag与Cu为难以相互扩散的金属，因此能够将金属扩散区域11的厚度控制到不满100nm。
其他构成由于与实施方式1相同，因此省略说明。
实施例
[实施例1]
一边对在电路基板的表面所设置的厚度0.3mm的由Cu构成的金属电极与在半导体元件的表面所设置的厚度100nm的由Au构成的敷金属层之间配置的Ag纳米粒子层施加5MPa的压力，一边在250℃下加热5分钟，由此制作将金属电极与敷金属层经由厚度0.05mm的Ag纳米粒子烧结层而电接合的半导体装置。采用TEM-EDS来分析Ag纳米粒子烧结层内部的Au的扩散状态，结果，金属扩散区域的厚度为80nm。
[实施例2]
除了一边对Ag纳米粒子层施加5MPa的压力一边在200℃下加热5分钟以外，与实施例1同样地制作半导体装置。采用TEM-EDS来分析Ag纳米粒子烧结层内部的Au的扩散状态，结果，金属扩散区域的厚度为40nm。
[实施例3]
除了将敷金属层的厚度变为50nm，一边对Ag纳米粒子层施加5MPa的压力一边在200℃下加热5分钟以外，与实施例1同样地制作半导体装置。采用TEM-EDS来分析Ag纳米粒子烧结层内部的Au的扩散状态，结果，金属扩散区域的厚度为40nm。
[实施例4]
除了一边对Ag纳米粒子层施加5MPa的压力一边在200℃下加热2分钟以外，与实施例1同样地制作半导体装置。采用TEM-EDS来分析Ag纳米粒子烧结层内部的Au的扩散状态，结果，金属扩散区域的厚度为20nm。
[实施例5]
除了一边对Ag纳米粒子层施加5MPa的压力一边在200℃下加热30秒以外，与实施例1同样地制作半导体装置。采用TEM-EDS来分析Ag纳米粒子烧结层内部的Au的扩散状态，结果，金属扩散区域的厚度为10nm。
[实施例6]
除了一边对Ag纳米粒子层施加5MPa的压力一边在180℃下加热30秒以外，与实施例1同样地制作半导体装置。采用TEM-EDS来分析Ag纳米粒子烧结层内部的Au的扩散状态，结果，金属扩散区域的厚度为1nm。
[实施例7]
除了将敷金属层的厚度变为50nm、一边对Ag纳米粒子层施加5MPa的压力一边在200℃下加热2分钟以外，与实施例1同样地制作半导体装置。采用TEM-EDS来分析Ag纳米粒子烧结层内部的Au的扩散状态，结果，金属扩散区域的厚度为20nm。
[实施例8]
除了将敷金属层的厚度变为50nm、一边对Ag纳米粒子层施加5MPa的压力一边在200℃下加热30秒以外，与实施例1同样地制作半导体装置。采用TEM-EDS来分析Ag纳米粒子烧结层内部的Au的扩散状态，结果，金属扩散区域的厚度为10nm。
[实施例9]
除了将敷金属层的厚度变为50nm、一边对Ag纳米粒子层施加5MPa的压力一边在180℃下加热30秒以外，与实施例1同样地制作半导体装置。采用TEM-EDS来分析Ag纳米粒子烧结层内部的Au的扩散状态，结果，金属扩散区域的厚度为1nm。
[比较例1]
除了一边对Ag纳米粒子层施加5MPa的压力一边在300℃下加热30分钟以外，与实施例1同样地制作半导体装置。采用TEM-EDS来分析Ag纳米粒子烧结层内部的Au的扩散状态，结果，金属扩散区域的厚度为120nm。
[比较例2]
除了将敷金属层的厚度变为50nm、一边对Ag纳米粒子层施加5MPa的压力一边在300℃下加热30分钟以外，与实施例1同样地制作半导体装置。采用TEM-EDS来分析Ag纳米粒子烧结层内部的Au的扩散状态，结果，金属扩散区域的厚度为120nm。
[比较例3]
除了一边对Ag纳米粒子层施加5MPa的压力一边在300℃下加热20秒以外，与实施例1同样地制作半导体装置。采用TEM-EDS来分析Ag纳米粒子烧结层内部的Au的扩散状态，结果，金属扩散区域的厚度为100nm。
[比较例4]
除了将敷金属层的厚度变为50nm以外，与实施例1同样地制作半导体装置。采用TEM-EDS来分析Ag纳米粒子烧结层内部的Au的扩散状态，结果，金属扩散区域的厚度为50nm。
对于上述制作的半导体装置，实施-55℃～175℃(1个循环：在-55℃下保持15分钟/在175℃下保持15分钟)的冷热冲击试验。图6为从半导体元件3的上表面侧采用超声波探伤的非破坏检查来观察600个循环的冷热冲击试验后的实施例1的半导体装置中的敷金属层与Ag纳米粒子烧结层的界面的结果。图7示意地表示冷热冲击试验后的金属纳米粒子烧结层内的裂纹的产生状况。就超声波探伤图像而言，对于半导体元件的面内的裂纹、即水平方向的裂纹，灵敏度良好。因此，能够确定图6的暗的部分表示接合的部位，图6的白的部分表示在如图7中所示的金属扩散区域11中产生水平方向的裂纹20的部位。如果使用该手法，可通过非破坏而以面积比例的方式求出水平方向的裂纹发展的状况。对于冷热冲击试验后的各半导体装置，算出图6中所示的白色部分占全体的面积比例作为裂纹面积率。另外，测定冷热冲击试验后的各半导体装置的热阻，将没有发现温度上升的情况评价为接合可靠性良好(○)，将发现温度上升的情况评价为接合可靠性不良(×)。将这些结果示于表1。另外，在表1中所示的结果中，将敷金属层的厚度为100nm的半导体装置的金属扩散区域的厚度与裂纹面积率的关系示于图8，将敷金属层的厚度为50nm的半导体装置的金属扩散区域的厚度与裂纹面积率的关系示于图9。
[表1]
敷金属层厚度 金属扩散区域厚度 裂纹面积率 接合可靠性
实施例1 100nm 80nm 6％ ○
实施例2 100nm 40nm 3％ ○
实施例3 50nm 40nm 8％ ○
实施例4 100nm 20nm 3％ ○
实施例5 100nm 10nm 2％ ○
实施例6 100nm 1nm 2％ ○
实施例7 50nm 20nm 7％ ○
实施例8 50nm 10nm 5％ ○
实施例9 50nm 1nm 6％ ○
比较例1 100nm 120nm 52％ ×
比较例2 50nm 120nm 37％ ×
比较例3 100nm 100nm 18％ ×
比较例4 50nm 50nm 19％ ×
由表1可知，就比较例1～比较例4的半导体装置而言，由于金属扩散区域的厚度比敷金属层的厚度大或者金属扩散区域的厚度与敷金属层的厚度相同，因此裂纹面积率成为18％以上，另外，接合可靠性也不良。就实施例1～实施例9的半导体装置而言，金属扩散区域的厚度均比敷金属层的厚度小，因此裂纹面积率不到10％，另外，接合可靠性也良好。
[实施例10]
一边对在电路基板的表面所设置的厚度0.3mm的由Cu构成的金属电极与在半导体元件的表面所设置的厚度200nm的由Cu构成的敷金属层之间配置的Ag纳米粒子层施加5MPa的压力，一边在300℃下加热5分钟，由此制作将金属电极与敷金属层经由厚度0.05mm的Ag纳米粒子烧结层而电接合的半导体装置。采用TEM-EDS来分析Ag纳米粒子烧结层内部的Cu的扩散状态，结果，金属扩散区域的厚度为10nm。
[实施例11]
一边对在电路基板的表面所设置的厚度0.3mm的由Cu构成的金属电极与在半导体元件的表面所设置的厚度200nm的由Ni构成的敷金属层之间配置的Ag纳米粒子层施加5MPa的压力，一边在300℃下加热5分钟，由此制作将金属电极与敷金属层经由厚度0.05mm的Ag纳米粒子烧结层而电接合的半导体装置。采用TEM-EDS来分析Ag纳米粒子烧结层内部的Ni的扩散状态，结果，金属扩散区域的厚度为10nm。
[实施例12]
一边对在电路基板的表面所设置的厚度0.3mm的由Cu构成的金属电极与在半导体元件的表面所设置的厚度200nm的由Ti构成的敷金属层之间配置的Ag纳米粒子层施加5MPa的压力，一边在300℃下加热5分钟，由此制作将金属电极与敷金属层经由厚度0.05mm的Ag纳米粒子烧结层而电接合的半导体装置。采用TEM-EDS来分析Ag纳米粒子烧结层内部的Ti的扩散状态，结果，金属扩散区域的厚度为10nm。
与实施例1同样地，对于冷热冲击试验后的各半导体装置求出裂纹面积率，且评价接合可靠性。将结果示于表2中。
[表2]
敷金属层厚度 金属扩散区域厚度 裂纹面积率 接合可靠性
实施例10 Cu：200nm 10nm 5％ ○
实施例11 Ni：200nm 10nm 8％ ○
实施例12 Ti：200nm 10nm 7％ ○
由表2可知，在实施例4、实施例5及实施例6的半导体装置中，金属扩散区域的厚度均不到30nm，比敷金属层的厚度小，因此裂纹面积率不到10％，另外，接合可靠性也良好。
予以说明，本国际申请要求基于在2017年3月24日申请的日本专利申请第2017-059464号的优先权，将该日本专利申请的全部内容援用于本国际申请。
附图标记的说明
1电路基板、2金属电极、3半导体元件、4敷金属层、5金属纳米粒子烧结层、11金属扩散区域、11’金属扩散区域、12薄的金属氧化膜、20裂纹。

Claims (6)

1.一种半导体装置，是将电子部件之间经由金属纳米粒子烧结层而电接合的半导体装置，其特征在于，
在所述金属纳米粒子烧结层的内部，构成在所述电子部件的表面所设置的敷金属层的金属进行扩散而形成金属扩散区域，所述金属扩散区域为在TEM-EDS分析中所述金属存在10质量％以上且不到100质量％的区域，所述金属扩散区域的厚度比所述敷金属层的厚度小。
2.根据权利要求1所述的半导体装置，其特征在于，所述金属扩散区域的厚度为1nm以上且不到100nm。
3.根据权利要求1或2所述的半导体装置，其特征在于，所述金属纳米粒子烧结层由Ag或Ag合金形成。
4.根据权利要求3所述的半导体装置，其特征在于，所述敷金属层由Cu、Ni、Ti、Co、Pd、Pt或它们的合金形成。
5.一种半导体装置的制造方法，是将电子部件之间经由金属纳米粒子烧结层而电接合的半导体装置的制造方法，其特征在于，具备如下工序：
对在所述电子部件的表面所设置的敷金属层实施氧等离子体处理或氮等离子体处理后，通过进行利用加热加压的所述接合，使构成所述敷金属层的金属向所述金属纳米粒子烧结层的内部扩散而形成具有比所述敷金属层的厚度小的厚度的金属扩散区域。
6.一种半导体装置的制造方法，是将电子部件之间经由金属纳米粒子烧结层而电接合的半导体装置的制造方法，其特征在于，具备如下工序：
将具有80℃以上且350℃以下的沸点的烃系溶剂或醇系溶剂涂布于烧结前的金属纳米粒子层后，通过进行利用加热加压的所述接合，使构成在所述电子部件的表面所设置的敷金属层的金属向所述金属纳米粒子烧结层的内部扩散而形成具有比所述敷金属层的厚度小的厚度的金属扩散区域。
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