JP6170045B2 - 接合基板及びその製造方法ならびに接合基板を用いた半導体モジュール及びその製造方法 - Google Patents
接合基板及びその製造方法ならびに接合基板を用いた半導体モジュール及びその製造方法 Download PDFInfo
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- JP6170045B2 JP6170045B2 JP2014522614A JP2014522614A JP6170045B2 JP 6170045 B2 JP6170045 B2 JP 6170045B2 JP 2014522614 A JP2014522614 A JP 2014522614A JP 2014522614 A JP2014522614 A JP 2014522614A JP 6170045 B2 JP6170045 B2 JP 6170045B2
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Description
(1b)前記接合層は、銀からなること。
(1c)前記接合層に含まれる最大の独立気孔の直径は1000nm以下であること。
(1d)前記接合層は、空隙率が1.0〜10.0%であること。
(2b)前記銀系金属粉は、銀からなること。
(2c)第二加熱工程は、還元性ガス中で行われること。
(2)接合層は気孔を含んでいるので、導体層と接合層との境界部分に接合していない領域が一部存在し十分な接合力を得られにくい。(形状の要因)
基材の表面に導体層を有する配線基板は、公知の方法で製造することができ、例えばアデティブ法、サブトラクティブ法(エッチング法)などが利用できる。
粒度分布に2つのピークを持つ銀系金属粉は、どのような方法で準備しても良い。例えば2種類のメジアン径の銀系金属粉(微粉:第1の銀系金属粉、粗粉:第2の銀系金属粉)を混合することによって準備することができる。第1及び第2の銀系金属粉としては、例えばそれぞれDOWAエレクトロニクス製の各種銀粒子乾粉を適宜選択することにより得られる。銀系金属粉とは、銀が主成分である金属からなる金属粉のことを示す。
次に、こうして得られたペースト層を有する配線基板を乾燥させ、銀系金属粉の保持層を形成する。乾燥の温度は、溶媒を揮発させることができれば特に限定されない。低沸点の溶媒では室温または低温で乾燥することができ、高沸点の溶媒は高温で乾燥させるように適宜設定することができる。乾燥の温度は特に制限されないが、例えば25〜150℃である。
配線基板の導体パターン上に保持された銀系金属粉の保持層を有する配線基板を加熱し、銀多孔体を形成する。
次に、含浸工程で、銀錯体溶液を銀多孔体層に含浸する。有機銀錯体溶液は、有機銀錯体と溶媒を混合し、粘度を1〜10mPa・sとなるよう調整して、作製される。有機銀錯体にはネオデカン酸銀、オレイン酸銀、リノール酸銀、カプリル酸銀、カプリン酸銀、ミリスチン酸銀、2メチルプロパン酸銀、2メチルブタン酸銀、2エチルブタン酸銀、2エチルヘキサン酸銀などの各種脂肪酸銀塩を、溶媒にはブタノールなどを用いる。
第二加熱工程では、含浸された有機銀錯体溶液を乾燥し更に有機銀錯体を還元し銀を析出させる。加熱する際に錯は錯イオン化し液状で存在しているので、有機銀錯体溶液の表面張力の影響から表面積が小さくなるように移動する。これは以下の2つの作用がある。
(2)1つの気孔の中でも有機銀錯体は尖った部分に移動しながら乾燥するので、気孔は略球形になるように形成される。
本発明の接合基板の製造方法は、配線基板を準備する工程の次にさらに銀または銀合金からなる緻密な下地層を形成する下地層形成工程があることが好ましい。
(2)接合層は気孔を含んでいるので、導体層と接合層との境界部分に接合していない領域が一部存在し十分な接合力を得られにくい。(形状の要因)
以下、ピン形状電極と平面形状電極とを接合した接合体の例について説明する。図1Aは、本実施例で得られた接合層の走査電子顕微鏡写真であり、図中スケールの一目盛りは1μmである。図1Bは、本実施例で得られた接合層の断面を部分的に拡大した走査電子顕微鏡写真であり、図中スケールの一目盛りは0.2μmである。
銀ペーストには、メジアン径が1μmとした銀系金属粉(第2の銀系金属粉2)とメジアン径が0.1μmとした銀系金属粉(第1の銀系金属粉3)の二種類の銀系金属粉と、溶液4(ビヒクル)を混合して作製した。溶液4(ビヒクル)は、結合剤にエチルセルロース、溶剤にα−テルピネオール、分散剤にステアリン酸を用いた。
次に、図3(a)の銀ペースト付きの導体層1を大気雰囲気で100℃に加熱された炉内へ5分間投入し、溶媒成分を乾燥させることにより、図3(b)に示すように銀ペーストからは溶液4が揮散し、第一の銀系金属粉3と、第二の銀系金属粉2が残った。
続いて、還元性雰囲気で250℃に加熱された炉内へ60分間投入し、形状が不定形でそれぞれが連結した気孔を有する銀多孔体5を形成した(図3(c)参照)。
さらに、図3(d)に示すように、半導体素子8を接合するスペーサ(ピン形状電極)を配線基板の導体層表面に治具を用いて載置した。続いて、配線基板に形成された銀多孔体5にスペーサ1kg/mm2の圧力で押し付け、注射針で有機銀錯体溶液6を銀多孔体に滴下した(図3(e)参照)。
最後に250℃に加熱された炉内へ60分間投入し、接合が完了した(図3(f)参照)。半導体素子8は、接合層7を介して導体層1と接合される。
次に、銀の微粒子と溶媒、有機バインダとを混合して得られる銀ペーストを配線基板の導体層に塗布し、加熱して得られた接合層について説明する。図2Aは、本実施例で得られた接合層の走査電子顕微鏡写真であり、図中スケールは10μmである。図2Bは、本実施例で得られた接合層の断面を部分的に拡大した走査電子顕微鏡写真であり、図中スケールは1μmである。
2 :第2の銀系金属粉
3 :第1の銀系金属粉
4 :溶液
5 :銀多孔体
6 :有機銀錯体溶液
7,17:接合層
8 :半導体素子(またはスペーサ)
9 :基材
Claims (5)
- 基材の表面に導体層を有する配線基板と、該導体層の表面に半導体素子を実装するための接合層を有する接合基板の製造方法であって、
配線基板を準備する工程と
粒度分布に2つのピークを持つ銀系金属粉と溶剤とからなるペーストを前記導体層表面に塗布しペースト層を形成する工程と、
前記ペースト層の溶剤を乾燥させ配線基板に銀系金属粉の保持層を形成する乾燥工程と、
前記保持層を有する配線基板を加熱し、保持層を構成する銀系金属粉どうしを接合させ、連続気孔が分散した銀多孔体層を形成する第一加熱工程と、
有機銀錯体溶液を、前記銀多孔体層に含浸し、銀多孔体の有機銀錯体含浸層を形成する含浸工程と、
前記銀多孔体の有機銀錯体含浸層を有する配線基板を加熱し、前記有機銀錯体溶液を還元し接合層を形成する第二加熱工程と、
を含む接合基板の製造方法。 - 前記配線基板を準備する工程の次に、銀または銀合金からなる下地層を形成する工程を有する、請求項1に記載の接合基板の製造方法。
- 前記銀系金属粉は、銀からなる、請求項1又は2に記載の接合基板の製造方法。
- 前記第二加熱工程は、還元性ガス中で行われる、請求項1乃至3のいずれか一項に記載の接合基板の製造方法。
- 前記銀多孔体の有機銀錯体含浸層に、半導体素子を載置したのち、前記第二加熱工程で、該半導体素子を接合させることにより、請求項1乃至4のいずれか1項に記載の前記接合基板に前記半導体素子を実装して半導体モジュールを製造する半導体モジュールの製造方法。
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