CN106716632A - 电子设备和用于制造电子设备的方法 - Google Patents
电子设备和用于制造电子设备的方法 Download PDFInfo
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- CN106716632A CN106716632A CN201580052153.3A CN201580052153A CN106716632A CN 106716632 A CN106716632 A CN 106716632A CN 201580052153 A CN201580052153 A CN 201580052153A CN 106716632 A CN106716632 A CN 106716632A
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- layer
- metal
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- sinter
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 63
- 239000002184 metal Substances 0.000 claims abstract description 63
- 239000010931 gold Substances 0.000 claims abstract description 24
- 229910052737 gold Inorganic materials 0.000 claims abstract description 22
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000000463 material Substances 0.000 claims description 60
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 27
- 239000004065 semiconductor Substances 0.000 claims description 27
- 229910052709 silver Inorganic materials 0.000 claims description 23
- 239000004332 silver Substances 0.000 claims description 22
- 229910052697 platinum Inorganic materials 0.000 claims description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 15
- 229910052760 oxygen Inorganic materials 0.000 claims description 15
- 239000001301 oxygen Substances 0.000 claims description 15
- 238000005245 sintering Methods 0.000 claims description 15
- 229910052703 rhodium Inorganic materials 0.000 claims description 14
- 239000010948 rhodium Substances 0.000 claims description 14
- 229910052741 iridium Inorganic materials 0.000 claims description 13
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 13
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 5
- 150000002739 metals Chemical class 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910000510 noble metal Inorganic materials 0.000 claims description 5
- 239000004033 plastic Substances 0.000 claims description 5
- 229920003023 plastic Polymers 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 187
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 22
- 239000000758 substrate Substances 0.000 description 18
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 8
- 239000002245 particle Substances 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 239000006071 cream Substances 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- 239000010970 precious metal Substances 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 230000007774 longterm Effects 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 229910000765 intermetallic Inorganic materials 0.000 description 2
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- 239000011148 porous material Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- NZWXMOTXTNDNLK-UHFFFAOYSA-N [Cu].[Zn].[Ag] Chemical compound [Cu].[Zn].[Ag] NZWXMOTXTNDNLK-UHFFFAOYSA-N 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- ALKZAGKDWUSJED-UHFFFAOYSA-N dinuclear copper ion Chemical compound [Cu].[Cu] ALKZAGKDWUSJED-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
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- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
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- 238000002347 injection Methods 0.000 description 1
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- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
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- 239000000203 mixture Substances 0.000 description 1
- 230000037230 mobility Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
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- 238000007254 oxidation reaction Methods 0.000 description 1
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Classifications
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- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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Abstract
提出一种电子设备,所述电子设备具有第一器件(1)和第二器件(2),所述第一器件和所述第二器件借助具有第一金属的烧结层(3)彼此连接,其中所述器件(1,2)中的至少一个器件具有至少一个接触层(4,4’),所述接触层以与所述烧结层(3)直接接触的方式设置,所述烧结层具有与第一金属不同的第二金属并且所述烧结层不含金。此外,提出一种用于制造电子设备的方法。
Description
相关申请的交叉参引
本专利申请要求德国专利申请10 2014 115 319.7的优先权,其公开的内容通过参引的方式并入此文。
技术领域
提出一种电子设备和一种用于制造电子设备的方法。尤其,电子设备具有烧结层。
背景技术
常见的是,借助于烧结层彼此连接的器件具有呈由金构成的薄的覆盖层形式的接触面。借助于这种覆盖层例如能够覆盖并且由此保护位于所述覆盖层下方的易氧化的层。因为一方面例如由银构成的烧结层能够具有对氧的高度的溶解性和扩散性,并且另一方面随时间的推移,金能够溶于银中,存在下述危险:在金覆盖层下方的基底随时间氧化。根据本发明,烧结层容易失去其在由此构成的氧化层上的附着,由此危害烧结连接的长期稳定性。
为了避免这类问题,迄今为止在大多数情况下使用金层,所述金层具有至少100nm的非常厚的厚度进而也是非常昂贵的。替选地,另选钯作为便宜的贵金属变型形式所述钯由厚度在几纳米范围中的非常薄的金层覆盖。此外也已知的是,使用厚的银层来覆盖。然而,例如在使用多孔的银烧结层时,在厚的银层下方又再必须放置由贵金属构成的附着层,以便阻止银在非贵金属的附着层上形成的金属氧化层处的长期去湿,所述多孔的银烧结层通常在无压力的烧结时产生。
发明内容
特定的实施方式的至少一个目的是,提出一种设备,其中两个器件与烧结层连接。特定的实施方式的另一目的是提出一种这样的设备。
通过根据独立权利要求的方法和主题来实现所述目的。方法和主题的有利的实施方式和改进方案是从属权利要求的特性,并且此外从下面的说明书和附图中得出。
根据至少一个实施方式,电子设备具有第一器件和第二器件,所述第一器件和所述第二器件与烧结层彼此连接。烧结层具有第一金属或由第一金属构成。
根据至少一个实施方式,用于制造具有至少一个第一器件和第二器件的电子设备的方法具有下述方法步骤,其中在第一器件和第二器件之间设置烧结材料。例如烧结材料能够施加到第一器件上。随后,第二器件能够施加在施加于第一器件上的烧结材料上。替选于此,烧结材料能够施加在第二器件上。随后,第一器件能够施加在施加在第二器件上的烧结材料上。此外也可行的是:第一器件或第二器件施加在烧结材料上并且随后连同烧结材料一起放置在其他器件上。此外也可行的是:烧结材料施加在两个器件上并且所述器件随后彼此相叠地放置。随后,烧结材料烧结成在第一器件和第二器件之间的烧结层。烧结能够在热和/或压力和/或超声波影响下在烧结时间期间进行。尤其,除温度影响之外,例如应用单轴压力能够辅助烧结连接的构成。
在上文中和下文中描述的特征和实施方式同样适用于电子设备和用于制造电子设备的方法。
根据另一实施方式,至少一个器件、即至少一个第一器件和/或至少二个第二器件具有至少一个接触层,所述接触层以与烧结层直接接触的方式设置。接触层具有第二金属,所述第二金属与烧结层的第一金属不同。接触层的第二金属以与烧结层的第一金属直接接触的方式设置。尤其,接触层不含金。
根据另一实施方式,接触层具有贵金属作为第二金属或由其构成。由此,接触层形成贵金属表面,烧结层直接施加在所述贵金属表面上。代替例如溶解于银或银烧结层中的金,接触层的第二金属具有下述金属,所述金属与第一金属、即例如与银具有互溶间隙,或者所述金属至少经由与烧结层自身的第一金属形成金属间化合物而钝化。由此,接触层间例如能够保持作为在电子设备的使用寿命期对位于其下方的非贵金属层进而可氧化的层的保护。因此,在使用金属的烧结连接时,接触层能够具有适合的接触材料,所述接触材料在尽可能少量使用贵金属材料的情况下尤其在含氧的环境中能够确保长期稳定的连接。
根据另一实施方式,接触层具有铂和/或铑和/或铱或由上述材料构成。这表示:接触层能够具有至少一种或多种选自铂、铑和铱的材料或由上述材料构成。已证实的是:具有铂和/或铑和/或铱或者由铂和/或铑和/或铱构成的层比金更稳定,以防止例如溶解于银层中,因为由于与金相比更高的熔点(Ir:2466℃,Rh:1966℃,Pt:1772℃,Au:1064℃,),铂、铑和铱显示出在银中显著较小的扩散趋势。所提及的材料例如能够借助于沉积方法,例如喷镀或喷雾(溅射)施加。
根据另一实施方式,烧结层具有银和/或铜。因此,烧结层能够具有银和/或铜作为第一金属或由上述材料构成,使得铂和/或铑和/或铱能够用作为用于银烧结层或铜烧结层的接触层的接触材料。如在上文中已经结合银作为烧结层的第一金属所描述的那样,在铜作为烧结层的第一金属的情况下,具有铂和/或铑和/或铱或者由上述材料构成的接触层也能够是有利的。
根据另一实施方式,烧结层对于氧是可穿透的。这尤其能够引起:烧结层具有下述材料,例如第一金属或者由其构成,所述材料对于氧是可穿透的。此外,对于氧的可穿透性也能够通过烧结层的结构提供或影响。尤其,烧结层能够由多孔材料、尤其第一金属构成或者所述烧结层至少具有多孔材料、尤其第一金属。
根据另一实施方式,接触层具有大于或等于5nm或者大于或等于15nm或者大于或等于30nm的层厚度。此外,接触层能够具有小于或等于500nm或者小于或等于100nm或者小于或等于60nm的层厚度。尤其,接触层的层厚度能够在5nm和500nm之间,优选在15nm和100nm之间并且尤其优选在30nm和60nm之间,其中分别包括边界值。具有40nm的层厚度的接触层也能够证实为是尤其有利的。
在这里描述的电子设备中,呈膏或预先压实的干体形式的烧结材料、即包含第一金属或由其构成的材料直接与第一器件和/或第二器件的接触层连接。由此,能够省去例如由银或金构成的中间层。因此,尤其能够形成含孔的接合层的烧结层因此处于与接触层的直接接触中。
根据另一实施方式,接触层施加在由可氧化的材料构成的层上。这尤其能够表示:具有带有第二金属的接触层的器件此外具有由可氧化的材料构成的层,所述层通过接触层覆盖。尤其,可氧化的材料能够是在与氧接触时容易氧化的金属。接触层覆盖由可氧化的材料构成的层,使得所述层受到接触层保护抵御环境气体并且在这种情况下尤其抵御氧。可氧化的材料例如能够具有钛、镍、铬和/或铝或由上述材料构成。接触层和位于其下方的另一这种层或还有多个其他层能够形成用于电接触的接触设置。
根据另一实施方式,每个器件、即第一器件和第二器件分别具有接触层,所述接触层以与烧结层直接接触的方式设置,所述烧结层具有与烧结层的第一金属不同的金属并且所述烧结层不含金。例如,第一器件和第二器件能够具有带有相同的第二金属的接触层。替选于此,也能够可行的是:第一器件具有带有第二金属的接触层,并且第二器件具有带有第三金属的接触层,其中第二金属和第三金属是彼此不同的。第一器件和第二器件的接触层能够分别根据至少一个上述实施方式构成,使得第二金属并且必要时第三金属能够分别具有铂和/或铑和/或铱或者能够由上述材料构成。
根据另一实施方式,第一器件具有载体元件或构成为载体元件,第二器件借助于烧结层安装在所述载体元件上。载体元件例如能够选自导体框、塑料载体、塑料壳体、陶瓷载体、电路板或其组合。例如,第一器件能够是例如由AlN构成的陶瓷载体或是金属芯电路板。此外,第一器件也能够是导体框,在安装第二器件之前或在安装第二器件之后用塑料压力注塑包封所述导体框。第一载体元件能够具有呈具有第二金属的上述接触层形式的至少一个接触面,第二器件借助于烧结层安装在所述接触层上。
根据另一实施方式,第二器件是电子半导体芯片。例如,电子半导体芯片能够构成为呈发光二极管芯片、激光二极管芯片或光电二极管芯片形式的光电子半导体芯片。此外,第二器件也能够是太阳能电池。此外,电子半导体芯片例如能够是功率半导体器件例如晶体管。例如,在这种情况下,第二器件能够构成为场效应晶体管,例如HEMT(“高电子迁移率晶体管”)。
附图说明
其他优点、有利的实施方式和改进方案从下文中结合附图描述的实施例中得出。
附图示出:
图1示出根据一个实施例的设备的示意图;
图2至图4示出根据其他实施例的设备的示意图;和
图5示出一些金属的温度相关的扩散系数。
在实施例和附图中,相同的或同类的或起相同作用的元件分别设有相同的附图标记。所示出的元件和其相互间的大小比例不按比例地示出,更确切地说,为了更好地可视性和/或为了更好地理解能够夸张大地示出个别元件,例如层、构件、器件和区域。
具体实施方式
在图1中示出电子设备100的实施例,所述电子设备具有第一器件1和第二器件2。在第一器件1和第二器件2之间设置有具有第一金属的烧结层3,所述烧结层将第一器件和第二器件1、2彼此连接。例如,第一器件1能够是载体元件,并且第二器件2能够是例如呈光电子半导体芯片,例如发光二极管芯片、激光二极管芯片或光电二极管芯片形式的电子半导体芯片,或者是呈功率半导体器件,例如晶体管形式的电子半导体芯片。尤其优选的是,烧结层3能够具有银和/或铜或由上述材料构成。
为了制造电子设备100,提供第一器件1。将烧结材料施加到第一器件1上,所述烧结材料例如以含溶剂的膏的形式借助于刮板或通过印刷来施加。烧结材料能够具有第一金属的颗粒,例如粉末颗粒和/或团块。如果例如烧结层3由银制成,那么作为烧结材料能够施加具有银颗粒的膏。替选于此,也能够将具有烧结材料的预先压实的干体设置在第一器件1和第二器件2之间。烧结材料能够包含其他材料和添加剂,所述其他材料和添加剂能够影响烧结材料的可加工性和/或烧结。
通过烧结材料的烧结,在无需熔化烧结材料的情况下仅通过烘烤固相的颗粒来闭合在烧结材料的各个颗粒之间的连接。在热和/或压力和/或超声波影响下,烧结能够在所要求的烧结时间期间进行。在烧结材料中,为了更好的可加工性,通过烧结过程分解或从烧结材料中去除现有的有机粘合剂、溶剂或其他添加剂,由此没有有机基质留在通过烧结建立的连接层中。在制成的烧结层中,烧结材料的颗粒能够烧结成多孔的接合体。在各个颗粒之间的连接非常牢固,并且在用于电子设备的正常的使用温度下在离所述烧结材料的熔点非常远的200℃下运行。
第一器件1具有接触层4,所述接触层设置在载体5上。例如载体5能够是陶瓷体。此外,载体5和接触层4能够是电路板的一部分,第二器件2借助于烧结层3安装在该部分上。
接触层4以与烧结层3直接接触的方式设置,接触层4具有第二金属,所述第二金属与烧结层3的第一金属不同并且不含金。尤其,接触层4的第二金属与烧结层3的第一金属直接接触。烧结层3对于氧能够是可穿透的,而接触层4能够形成对位于其下方的层和区域的保护,所述层和区域例如可能由于来自周围环境的氧而容易氧化。为此,接触层4具有金属,所述金属与烧结层3自身的第一金属具有互溶间隙,或者至少经由与烧结层3的第一金属形成金属间化合物而钝化。尤其,在所示出的实施例中,接触层4具有铂和/或铑和/或铱或由上述材料构成。
在图5中为Pt在Ag中(曲线51)、Ag在Pt中(曲线52)、Au在Ag中(曲线53)、Ag在Au中(曲线54)和Pd在Ag中(曲线55)示出与温度T相关的扩散系数D的这种关联关系,其中数据从文献“Zahlenwerte und Funktionen aus Naturwissenschaft und Technik”,Berlin,Springer,Bd.26,1990中得出。从图5的曲线中容易看出的是:铂在银中和反之的扩散趋势比金在银中和反之的扩散趋势以及比钯在银中的扩散趋势明显更小。对于铑和铱能够假设类似的特性。相应地,在用于半导体芯片例如发光二极管芯片的典型的工作温度下,用于烧结层3的第一金属在接触层4的第二金属中的扩散常数能够优选小于或等于1×10-24m2s-1或者小于或等于1×10-25m2s-1或者小于或等于1×10-26m2s-1或者小于或等于1×10-28m2s-1。此外,铂、铑和铱不溶于银中或者至少基本上不溶于银中,使得与金相比,这些材料与银的混匀明显减少。因为例如铂对于氧是不可穿透的,而银对于氧具有可穿透性,如在文献F.K.Moghadam等,“Oxygen Diffusion and Solubility Studiesin Ag and Pt Using AC Impendance Spectroscopy”,J.Electrochem.Soc.,S.1329至1332(1986)中描述的那样,接触层4能够确保在含氧的环境中的长期稳定的连接。
由于铂、铑和铱的所描述的特性,接触层4能够保持为相当薄的,并且能够弃用例如由钯或金构成的附加的贵金属层。尤其,接触层4能够具有大于或等于5nm并且小于等于500nm、优选大于或等于15nm并且小于等于100nm并且尤其优选大于或等于30nm并且小于等于60nm的层厚度。例如,在所示出的实施例中,接触层4能够具有40nm的厚度,借助所述厚度在实验中获得非常好的结果。
如果接触层4既适合用于施加烧结层也适合用于借助常见的无铅的软焊例如SAC(锌-银-铜)进行焊接,那么使用例如铂能够避免下述问题,所述问题能够在使用金接触层时产生。因此,与SAC相比,使用厚的金接触层能够引起形成AuSn4相,所述AuSn4相危害钎焊连接的可靠性,而非常薄的金接触层在使用器件期间能够引起失去附着的危险增加。
结合图2示出用于电子设备100的另一实施例,其中在载体5上的第一器件1具有由可氧化的材料构成的层6,在所述层上又再设置有接触层4。接触层4尤其直接施加在由可氧化的材料构成的层6上并且覆盖所述层。例如,接触层4和层6能够是接触装置的一部分。层6的可氧化的材料例如能够具有钛、镍、铬和/或铝或由上述材料构成。通过接触层4覆盖层6的方式,能够避免在概述部分中结合金接触层和银烧结层描述的问题。
除在图1和图2中示出的实施例之外(对在图1和图2中示出的实施例替选地),仅第二器件2或两个器件1、2也能够具有接触层4或者具有接触层4和至少一个位于其下方的、由可氧化的材料构成的层6。
图3和图4纯示例性地示出用于电子设备的其他实施例。在图3和图4中具体描述的第一器件和第二器件1、2是纯示例性的并且不应限制性地理解。
在图3中示出用于电子设备100的实施例,所述电子设备具有AlN陶瓷载体5作为第一器件1,所述第一器件用由钛构成的100nm厚的层6和20nm厚的接触层4进行覆层。借助于烧结层3将呈氮化镓-HEMT形式的第二器件2安装在第一器件1上,所述第二器件在由镍构成的层6’和由铝构成的层6”上方同样具有接触层4’。第一器件和/或第二器件1、2能够具有其他接触层,这些接触层为了概览性而没有示出。
烧结层3具有第一金属,而接触层4、4’分别具有第二金属,所述第二金属与第一金属不同并且不含金。接触层4、4’分别以与烧结层3直接接触的方式设置并且分别具有相同的金属、尤其在所示出的实施例中具有铂或由其构成。替选于此,接触层4能够具有第二金属,并且接触层4’具有第三金属,所述第二金属和第三金属彼此间是不同的并且与烧结层3的第一金属不同。在所示出的实施例中,两个接合方、即第一器件1和第二器件2借助于银烧结膏连接,其中除在烧结过程期间的温度影响之外,单轴压力能够可选地辅助所述连接的构成。
在图4中示出用于电子设备100的另一实施例,其中经由银烧结层3将构成为光电子半导体芯片的第二器件2安装在构成为金属芯电路板的第一器件1上。尤其,在所示出的实施例中,半导体芯片构成为发光二极管芯片。
构成为金属芯电路板的第一器件1具有在载体5上镀银的电极层8,而形成第二器件2的半导体芯片具有电极,所述电极具有200nm厚的镍层6和由铂构成的15nm厚的接触层4,所述接触层与烧结层3处于直接接触中。
形成第二器件2的半导体芯片能够根据放射的波长具有基于不同半导体体系的半导体本体7。对于长波的、红外至红色的辐射例如适用基于InxGayAl1-x-yAs的半导体层序列,对于红色至绿色的辐射例如适用基于InxGayAl1-x-yP的半导体层序列,并且对于短波的可见的、即尤其在绿色至蓝色的光的范围中和/或对于紫外的辐射例如适用基于InxGayAl1-x-yN的半导体层序列,其中分别适用0≤x≤1并且0≤y≤1。
尤其,半导体芯片的半导体本体7能够具有半导体层序列,尤其优选具有外延生长的半导体层序列或由其构成。为此,半导体层序列能够借助于外延方法,例如金属有机气相外延(MOVPE)或分子束外延(MBE)而生长在生长衬底上并且设有电接触部。通过分割具有生长的半导体层序列的生长衬底能够提供多个光电子半导体芯片。
此外,在分割之前,半导体层序列能够转移到载体衬底上,并且生长衬底能够被打薄或完全移除。这种具有载体衬底作为衬底而非生长衬底的半导体芯片也能够称作所谓的薄膜半导体芯片。例如在文献I.Schnitzer等,Appl.Phys.Lett.63(16),1933年10月18号,2174-2176中描述薄层发光二极管的基本原理。
半导体芯片的电接触部能够如在所示出的实施例中那样设置在同一侧上或者也能够设置在半导体层序列的不同侧上。在所示出的实施例中,半导体芯片在同一侧上作为能烧结的接触层4具有电接触面并且构成为所谓的具有蓝宝石衬底的倒装芯片,所述蓝宝石衬底能安装有接触层4并且是可电连接的。替选于此,半导体芯片也能够在衬底的与半导体层序列相对置的一侧上具有例如呈可烧结的接触层形式的电接触部,而在半导体层序列的与衬底相对置的一侧上能够构成例如呈用于借助于接合线进行接触的所谓的焊盘形式的另一接触面。
除经由烧结层建立电联接的所示出的实施例之外,也能够可行的是:将烧结层用于纯热联接。为此,类似于具有电接触部的图4的实施例,半导体芯片能够在半导体层序列的背离衬底的一侧上构成,而呈热接触层形式的接触层能够在衬底的背离半导体层序列的一侧上构成。接触层能够如结合上述实施例描述的那样构成。衬底能够是电绝缘的,在所述衬底上构成有接触层。在热接触层上方,半导体芯片能够借助于烧结层例如与散热片连接,使得电接触部能够用作为用于经由线联接建立的电联接的上侧接触部。例如,适合的半导体芯片能够是具有电绝缘衬底例如蓝宝石衬底的基于AlGaInN的半导体芯片。半导体芯片能够借助烧结层上方的热接触层例如与散热片连接,所述散热片由铜构成或具有铜。
结合附图描述的实施例能够替选地或附加地具有在上文中在概述部分中描述的特征。此外,结合附图描述的实施例能够根据其他实施例相互组合。
本发明不局限于根据实施例进行的描述。更确切地说,本发明包括每个新的特征以及特征的每个组合,这尤其包含在权利要求中的特征的每个组合,即使该特征或者该组合本身未明确地在权利要求中或者实施例中说明时也如此。
Claims (15)
1.一种电子设备,所述电子设备具有第一器件(1)和第二器件(2),所述第一器件和所述第二器件借助具有第一金属的烧结层(3)彼此连接,其中所述器件(1,2)中的至少一个器件具有至少一个接触层(4,4’),所述接触层以与所述烧结层(3)直接接触的方式设置,所述烧结层具有与所述第一金属不同的第二金属并且所述烧结层不含金。
2.根据权利要求1所述的设备,
其中所述烧结层(3)对于氧是可穿透的。
3.根据权利要求1或2所述的设备,
其中所述烧结层(3)具有银。
4.根据上述权利要求中任一项所述的设备,
其中所述烧结层(3)具有铜。
5.根据上述权利要求中任一项所述的设备,
其中所述接触层(4,4’)具有贵金属。
6.根据上述权利要求中任一项所述的设备,
其中所述接触层(4,4’)具有铑和/或铱。
7.根据上述权利要求中任一项所述的设备,
其中所述接触层(4,4’)具有铂。
8.根据上述权利要求中任一项所述的设备,
其中所述接触层(4,4’)具有大于或等于5nm并且小于等于500nm的层厚度。
9.根据上述权利要求中任一项所述的设备,
其中所述接触层(4,4’)施加在所述由可氧化的材料构成的层(6,6’,6”)。
10.根据权利要求9所述的设备,
其中所述接触层(4,4’)直接施加在所述由可氧化的材料构成的层(6,6’)上。
11.根据权利要求9或10所述的设备,
其中所述可氧化的材料具有钛、镍、铬和/或铝。
12.根据上述权利要求中任一项所述的设备,
其中每个所述器件(1,2)具有至少一个接触层(4,4’),所述接触层分别以与所述烧结层(3)直接接触的方式设置,所述烧结层具有与第一金属不同的金属并且不含金。
13.根据上述权利要求中任一项所述的设备,
其中所述第一器件(1)具有第一载体元件,所述第一载体元件选自导体框、塑料载体、塑料壳体、陶瓷载体、电路板、金属芯电路板或者它们的组合。
14.根据上述权利要求中任一项所述的设备,
其中所述第二器件(2)是电子半导体芯片。
15.一种用于制造根据权利要求1至14中任一项所述的电子设备的方法,其中
-在第一器件(1)和第二器件(2)之间放置烧结材料,并且
-将所述烧结材料烧结成在所述第一器件(1)和所述第二器件(2)之间的烧结层(3)。
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US10073294B1 (en) * | 2017-03-31 | 2018-09-11 | Innolux Corporation | Display device |
US10686158B2 (en) | 2017-03-31 | 2020-06-16 | Innolux Corporation | Display device |
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