CN103168362B - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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Publication number
CN103168362B
CN103168362B CN201080069639.5A CN201080069639A CN103168362B CN 103168362 B CN103168362 B CN 103168362B CN 201080069639 A CN201080069639 A CN 201080069639A CN 103168362 B CN103168362 B CN 103168362B
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gan layer
semiconductor device
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CN103168362A (zh
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冈本直哉
美浓浦优
美浓浦优一
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Fujitsu Ltd
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Fujitsu Ltd
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/8252—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
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    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
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    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
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    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
CN201080069639.5A 2010-10-20 2010-10-20 半导体装置及其制造方法 Active CN103168362B (zh)

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PCT/JP2010/068466 WO2012053071A1 (ja) 2010-10-20 2010-10-20 半導体装置及びその製造方法

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US (1) US8969921B2 (ja)
EP (1) EP2631950A4 (ja)
JP (1) JP5561371B2 (ja)
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WO (1) WO2012053071A1 (ja)

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US10468406B2 (en) * 2014-10-08 2019-11-05 Northrop Grumman Systems Corporation Integrated enhancement mode and depletion mode device structure and method of making the same
JP6447166B2 (ja) * 2015-01-22 2019-01-09 富士通株式会社 化合物半導体装置及びその製造方法
JP6685278B2 (ja) * 2015-03-11 2020-04-22 パナソニック株式会社 窒化物半導体装置
JP6494361B2 (ja) * 2015-03-25 2019-04-03 ローム株式会社 窒化物半導体デバイス
US10062630B2 (en) * 2015-12-31 2018-08-28 Infineon Technologies Austria Ag Water and ion barrier for the periphery of III-V semiconductor dies
CN105914232B (zh) * 2016-05-06 2020-02-21 西安电子科技大学 T栅N面GaN/AlGaN鳍式高电子迁移率晶体管
US10170611B1 (en) 2016-06-24 2019-01-01 Hrl Laboratories, Llc T-gate field effect transistor with non-linear channel layer and/or gate foot face
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CN108511531A (zh) * 2017-02-27 2018-09-07 苏州晶湛半导体有限公司 一种肖特基二极管制作工艺及肖特基二极管
US11121229B2 (en) 2017-12-28 2021-09-14 Vanguard International Semiconductor Corporation Methods of fabricating semiconductor structures and high electron mobility transistors
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CN110518074B (zh) * 2019-07-23 2021-02-02 西安电子科技大学 阴阳极交替的大电流GaN肖特基二极管及其制作方法

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