CN103153540A - 具有多模态孔径分布的抛光垫 - Google Patents
具有多模态孔径分布的抛光垫 Download PDFInfo
- Publication number
- CN103153540A CN103153540A CN2011800497894A CN201180049789A CN103153540A CN 103153540 A CN103153540 A CN 103153540A CN 2011800497894 A CN2011800497894 A CN 2011800497894A CN 201180049789 A CN201180049789 A CN 201180049789A CN 103153540 A CN103153540 A CN 103153540A
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- polishing pad
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- 238000009826 distribution Methods 0.000 title claims abstract description 74
- 239000011148 porous material Substances 0.000 title abstract description 21
- 239000000463 material Substances 0.000 claims abstract description 52
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 39
- 229920002635 polyurethane Polymers 0.000 claims abstract description 37
- 239000004814 polyurethane Substances 0.000 claims abstract description 37
- 238000000034 method Methods 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 239000004065 semiconductor Substances 0.000 claims abstract description 21
- 230000002902 bimodal effect Effects 0.000 claims description 32
- 239000002002 slurry Substances 0.000 claims description 32
- 239000003795 chemical substances by application Substances 0.000 claims description 29
- 239000000203 mixture Substances 0.000 claims description 23
- 238000007493 shaping process Methods 0.000 claims description 18
- 238000007517 polishing process Methods 0.000 claims description 15
- 238000002156 mixing Methods 0.000 claims description 13
- 230000008569 process Effects 0.000 claims description 11
- 239000004088 foaming agent Substances 0.000 claims description 8
- 239000000314 lubricant Substances 0.000 claims description 7
- 229910003460 diamond Inorganic materials 0.000 claims description 6
- 239000010432 diamond Substances 0.000 claims description 6
- 239000012948 isocyanate Substances 0.000 claims description 6
- 150000002513 isocyanates Chemical group 0.000 claims description 6
- -1 aromatic diamine compound Chemical class 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 239000000126 substance Substances 0.000 description 10
- 239000002243 precursor Substances 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 238000005987 sulfurization reaction Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 150000004984 aromatic diamines Chemical class 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- QCCDYNYSHILRDG-UHFFFAOYSA-K cerium(3+);trifluoride Chemical compound [F-].[F-].[F-].[Ce+3] QCCDYNYSHILRDG-UHFFFAOYSA-K 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
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- 229910052618 mica group Inorganic materials 0.000 description 2
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
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- 229920001169 thermoplastic Polymers 0.000 description 2
- 239000004416 thermosoftening plastic Substances 0.000 description 2
- ITRNXVSDJBHYNJ-UHFFFAOYSA-N tungsten disulfide Chemical compound S=[W]=S ITRNXVSDJBHYNJ-UHFFFAOYSA-N 0.000 description 2
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- 244000137852 Petrea volubilis Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 125000006157 aromatic diamine group Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
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- 230000008859 change Effects 0.000 description 1
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- 238000013021 overheating Methods 0.000 description 1
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- 239000002245 particle Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
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- 229920001451 polypropylene glycol Polymers 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Manufacture Of Porous Articles, And Recovery And Treatment Of Waste Products (AREA)
Abstract
Description
Claims (34)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US39374610P | 2010-10-15 | 2010-10-15 | |
US61/393,746 | 2010-10-15 | ||
US12/979,123 | 2010-12-27 | ||
US12/979,123 US8702479B2 (en) | 2010-10-15 | 2010-12-27 | Polishing pad with multi-modal distribution of pore diameters |
PCT/US2011/055796 WO2012051197A1 (en) | 2010-10-15 | 2011-10-11 | Polishing pad with multi-modal distribution of pore diameters |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103153540A true CN103153540A (zh) | 2013-06-12 |
CN103153540B CN103153540B (zh) | 2016-11-16 |
Family
ID=45934559
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201180049789.4A Active CN103153540B (zh) | 2010-10-15 | 2011-10-11 | 具有多模态孔径分布的抛光垫 |
Country Status (10)
Country | Link |
---|---|
US (2) | US8702479B2 (zh) |
EP (1) | EP2627478B8 (zh) |
JP (2) | JP5856622B2 (zh) |
KR (3) | KR101584277B1 (zh) |
CN (1) | CN103153540B (zh) |
IL (1) | IL225390A (zh) |
MY (1) | MY167541A (zh) |
SG (1) | SG189053A1 (zh) |
TW (2) | TWI591709B (zh) |
WO (1) | WO2012051197A1 (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105408063A (zh) * | 2013-07-31 | 2016-03-16 | 内克斯普拉纳公司 | 低密度抛光垫 |
CN108698206A (zh) * | 2016-01-19 | 2018-10-23 | 应用材料公司 | 多孔化学机械抛光垫 |
CN110238752A (zh) * | 2014-10-17 | 2019-09-17 | 应用材料公司 | 抛光制品 |
CN110385641A (zh) * | 2018-04-17 | 2019-10-29 | Skc株式会社 | 多孔性研磨垫及其制备方法 |
CN114126803A (zh) * | 2019-05-07 | 2022-03-01 | Cmc材料股份有限公司 | 具有固定沟槽体积的化学机械平坦化垫 |
Families Citing this family (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8702479B2 (en) | 2010-10-15 | 2014-04-22 | Nexplanar Corporation | Polishing pad with multi-modal distribution of pore diameters |
US8968058B2 (en) | 2011-05-05 | 2015-03-03 | Nexplanar Corporation | Polishing pad with alignment feature |
KR20130095430A (ko) * | 2012-02-20 | 2013-08-28 | 케이피엑스케미칼 주식회사 | 연마패드 및 그 제조방법 |
TWI626120B (zh) * | 2013-01-21 | 2018-06-11 | 智勝科技股份有限公司 | 研磨墊 |
TWI626119B (zh) * | 2013-01-21 | 2018-06-11 | 智勝科技股份有限公司 | 切割裝置、研磨墊的製造方法 |
US9649742B2 (en) | 2013-01-22 | 2017-05-16 | Nexplanar Corporation | Polishing pad having polishing surface with continuous protrusions |
US9238294B2 (en) * | 2014-06-18 | 2016-01-19 | Nexplanar Corporation | Polishing pad having porogens with liquid filler |
US9873180B2 (en) | 2014-10-17 | 2018-01-23 | Applied Materials, Inc. | CMP pad construction with composite material properties using additive manufacturing processes |
US10821573B2 (en) | 2014-10-17 | 2020-11-03 | Applied Materials, Inc. | Polishing pads produced by an additive manufacturing process |
CN113579992A (zh) | 2014-10-17 | 2021-11-02 | 应用材料公司 | 使用加成制造工艺的具复合材料特性的cmp衬垫建构 |
US11745302B2 (en) | 2014-10-17 | 2023-09-05 | Applied Materials, Inc. | Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process |
US10399201B2 (en) | 2014-10-17 | 2019-09-03 | Applied Materials, Inc. | Advanced polishing pads having compositional gradients by use of an additive manufacturing process |
US10875153B2 (en) | 2014-10-17 | 2020-12-29 | Applied Materials, Inc. | Advanced polishing pad materials and formulations |
US10875145B2 (en) | 2014-10-17 | 2020-12-29 | Applied Materials, Inc. | Polishing pads produced by an additive manufacturing process |
US10946495B2 (en) * | 2015-01-30 | 2021-03-16 | Cmc Materials, Inc. | Low density polishing pad |
US9630293B2 (en) * | 2015-06-26 | 2017-04-25 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad composite polishing layer formulation |
JP2017064891A (ja) * | 2015-10-02 | 2017-04-06 | 富士紡ホールディングス株式会社 | 研磨パッド |
KR102609439B1 (ko) | 2015-10-30 | 2023-12-05 | 어플라이드 머티어리얼스, 인코포레이티드 | 원하는 제타 전위를 가진 연마 제품을 형성하는 장치 및 방법 |
US10593574B2 (en) | 2015-11-06 | 2020-03-17 | Applied Materials, Inc. | Techniques for combining CMP process tracking data with 3D printed CMP consumables |
US10391605B2 (en) | 2016-01-19 | 2019-08-27 | Applied Materials, Inc. | Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process |
JP6818489B2 (ja) * | 2016-09-30 | 2021-01-20 | 富士紡ホールディングス株式会社 | 研磨パッド及びその製造方法 |
KR101853021B1 (ko) * | 2017-01-12 | 2018-04-30 | 에스케이씨 주식회사 | 다공성 폴리우레탄 연마패드 및 이의 제조방법 |
US20180304539A1 (en) | 2017-04-21 | 2018-10-25 | Applied Materials, Inc. | Energy delivery system with array of energy sources for an additive manufacturing apparatus |
KR101835087B1 (ko) * | 2017-05-29 | 2018-03-06 | 에스케이씨 주식회사 | 다공성 폴리우레탄 연마패드 및 이를 사용하여 반도체 소자를 제조하는 방법 |
KR101835090B1 (ko) * | 2017-05-29 | 2018-03-06 | 에스케이씨 주식회사 | 다공성 폴리우레탄 연마패드 및 이를 사용하여 반도체 소자를 제조하는 방법 |
US11471999B2 (en) | 2017-07-26 | 2022-10-18 | Applied Materials, Inc. | Integrated abrasive polishing pads and manufacturing methods |
US11072050B2 (en) | 2017-08-04 | 2021-07-27 | Applied Materials, Inc. | Polishing pad with window and manufacturing methods thereof |
WO2019032286A1 (en) | 2017-08-07 | 2019-02-14 | Applied Materials, Inc. | ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME |
KR101949905B1 (ko) | 2017-08-23 | 2019-02-19 | 에스케이씨 주식회사 | 다공성 폴리우레탄 연마패드 및 이의 제조방법 |
JP7045334B2 (ja) * | 2017-09-11 | 2022-03-31 | エスケイシー・ソルミックス・カンパニー・リミテッド | 多孔質ポリウレタン研磨パッドおよびその製造方法 |
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Also Published As
Publication number | Publication date |
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JP2013539927A (ja) | 2013-10-28 |
JP5856622B2 (ja) | 2016-02-10 |
US20120094586A1 (en) | 2012-04-19 |
CN103153540B (zh) | 2016-11-16 |
JP6033358B2 (ja) | 2016-11-30 |
MY167541A (en) | 2018-09-05 |
US20140167305A1 (en) | 2014-06-19 |
EP2627478B1 (en) | 2017-05-31 |
IL225390A0 (en) | 2013-06-27 |
US8702479B2 (en) | 2014-04-22 |
KR101608901B1 (ko) | 2016-04-04 |
TWI591709B (zh) | 2017-07-11 |
EP2627478A1 (en) | 2013-08-21 |
TW201225169A (en) | 2012-06-16 |
KR101584277B1 (ko) | 2016-01-12 |
KR20150092347A (ko) | 2015-08-12 |
JP2015181173A (ja) | 2015-10-15 |
EP2627478B8 (en) | 2017-08-02 |
KR20140112577A (ko) | 2014-09-23 |
WO2012051197A1 (en) | 2012-04-19 |
IL225390A (en) | 2017-01-31 |
TWI533368B (zh) | 2016-05-11 |
SG189053A1 (en) | 2013-05-31 |
TW201620030A (zh) | 2016-06-01 |
US9555518B2 (en) | 2017-01-31 |
KR20130093121A (ko) | 2013-08-21 |
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