CN102822976B - 用于场效应晶体管器件的自动对准接触 - Google Patents

用于场效应晶体管器件的自动对准接触 Download PDF

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CN102822976B
CN102822976B CN201180016073.4A CN201180016073A CN102822976B CN 102822976 B CN102822976 B CN 102822976B CN 201180016073 A CN201180016073 A CN 201180016073A CN 102822976 B CN102822976 B CN 102822976B
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silicon
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CN102822976A (zh
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郭德超
W·E·亨施
X·王
K·K·H·黄
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Abstract

一种形成场效应晶体管的方法，所述方法包含：形成栅极叠层、邻近所述栅极叠层的相对侧面的间隔物、在所述间隔物的相对侧面上的硅化物源极区域和硅化物漏极区域，在所述源极区域和所述漏极区域上外延生长硅；在所述栅极叠层和所述间隔物上形成衬里层，去除所述衬里层的一部分以暴露所述硬掩模层的一部分，去除所述硬掩模层的暴露部分以暴露所述栅极叠层的硅层，去除暴露的硅以暴露所述栅极叠层的金属层的一部分、所述源极区域以及所述漏极区域；以及在所述栅极叠层的所述金属层上、所述硅化物源极区域和所述硅化物漏极区域上沉积导电材料。

Description

用于场效应晶体管器件的自动对准接触
技术领域
本发明涉及半导体场效应晶体管。
背景技术
半导体场效应晶体管(FET)包含通常被电连接至金属接触的源极、漏极与栅极区域。如果在制造过程中金属接触未对准，金属接触的制造可能导致接触间的短路。
发明内容
在本发明的第一方面中，一种形成场效应晶体管的方法包含：在衬底上形成栅极叠层、在该衬底上邻近于该栅极叠层的相对侧面形成间隔物，在该衬底上邻近该栅极叠层的第一侧面上的间隔物形成硅化物源极区域，在该衬底上邻近该栅极叠层的第二侧面的间隔物形成硅化物漏极区域，在该暴露的硅化物源极区域和该暴露的硅化物漏极区域上外延生长硅，在该栅极叠层的硬掩模层和该间隔物上形成衬里层，去除该衬里层的一部分以暴露该硬掩模层的一部分，去除该硬掩模层的暴露部分以暴露栅极叠层的硅层，去除暴露的硅以暴露该栅极叠层的金属层的一部分、该硅化物源极区域和该硅化物漏极区域，以及在该栅极叠层的暴露金属层、该暴露的硅化物源极区域及该暴露的硅化物漏极区域层上沉积导电材料。
在本发明的另一方面中，一种场效应晶体管器件包含：设置在衬底上的栅极叠层、设置在该栅极叠层的第一末端上的第一接触部分、设置在该栅极叠层的第二末端上的第二接触部分，该第一接触部分与该第二接触部分相距距离（d）、设置在该器件的源极区域中的具有宽度（w）的第三接触部分，该距离（d）大于该宽度（w）。
本发明的该技术实现额外的特征以及优点。本发明的其它实施例以及方面将在此细述，并视为所要求保护的本发明的一部分。为了更加了解本发明的优点及特征，可参照该描述和附图。
附图说明
在本说明书最后的权利要求中，特别指出并明确地请求被视为本发明的主旨。根据以上结合附图的详细描述，本发明的前述与其它诸特征和诸优点将更加显而易见，其中：
图1A至8C图示用于形成场效应晶体管器件的方法和产生的结构。
具体实施方式
图1A和1B分别以剖视图和上视图图示形成场效应应晶体管的方法。图1A图示多个设置在硅衬底102上的栅极叠层100，该衬底可包含硅部分及绝缘体上硅沟槽部分(SOI)501（如下述的图5A所示）。具有纵轴x的栅极叠层100平行排列（如图1B所示）。在示例实施例中，栅极叠层100包含介电层104(诸如设置在衬底102上的高K介电材料)。金属层106(诸如氮化钽)被设置在介电层104上。硅层108设置在金属层106上以及硬掩模层110(诸如SiN材料)设置在硅层108上。间隔物112在衬底102上沿着栅极叠层100的侧面形成。间隔物112可由如氮化物材料形成，并可包含任何数目的层以及层中的任何材料组合。在所图示的实施例中，间隔物112包含两层间隔物材料。在衬底102上邻近间隔物112形成源极区域(S)和漏极区域(D)。源极区域和漏极区域包含在源极区域和漏极区域上形成的硅化物114材料(诸如WSi2或NiSi2)。
图2A和2B图示在源极区域和漏极区域的暴露的硅化物114上，外延成长硅之后产生的结构。外延成长产生从硅化物114延伸的暴露硅区域202。
图3A和3B图示在栅极叠层100、硅区域202以及间隔物112之上沉积衬里层302之后产生的结构。衬里层302可包含如氧化物层。
图4A和4B图示后将衬里层302的一部分去除以暴露硅区域202的部分后的产生的结构。衬里层302的该部分可通过诸如化学机械抛光(CMP)或其它合适的机械或化学工艺所去除。
图5A和5B图示在将衬里层302的部分去除以暴露硬掩模层110的部分后的产生的结构。去除衬里层302的一部分，形成由硬掩模层110及衬里层302所限定的腔502。
图6A和图6B图示将硬掩模层110的暴露部分去除而暴露硅层108的部分后的产生的结构。硬掩模层110的暴露部分可通过诸如反应性离子蚀刻(RIE)的蚀刻工艺或其它用以蚀刻硬掩模层110材料的合适蚀刻工艺所去除。
图7A、7B和7C图示将（图6A的）硅层108的暴露部分和（图6B的)雇区域202去除后产生的结构。暴露的硅可通过诸如用以去除硅的RIE工艺或任何其它合适的蚀刻工艺去除。硅层108的暴露部分的去除，暴露金属层106的部分并增加腔502的深度，以便腔502由衬里层302、间隔物112以及金属层106限定，同时硅区域202的去除暴露了硅化物114源极区域和漏极区域，并在衬里层302中形成腔702。腔702由衬里层302和硅化物114限定。
图8A、8B和8C图示在（图7A和7C的）腔502和腔702内形成导电接触802和802g之后产生的结构。导电接触802和802g可通过在腔502及腔702内并在暴露的衬里层302上，沉积金属材料(诸如银、金或铝)层而形成。诸如CMP的抛光工艺或其它合适程序可用来从衬里层302去除金属材料且在一些实施例中去除衬里层302的一部分去以限定接触802和802g。接触802和802g被电连接到器件的源极、漏极和栅极(G)区域。
参阅图8B，源极和漏极区域接触802沿着如线8C所示的横轴排列，线8C与（图1B的）栅极叠层100的纵轴x正交，且和栅极叠层100的中间相交。栅极区域接触802g沿由线8A和y所示的平行轴排列，该线和平行于纵轴x的栅极叠层100纵轴正交。栅极区域接触802g在栅极叠层的末端以距离d相隔。源极和漏极区域接触802具有宽度w。在所图示的实施例中，距离d大于宽度w。栅极区域接触802g与源极和漏极区域接触802的偏移量减少了在制造工艺中出现接触802与802g之间短路。
本文的用语仅用来描述特定实施例，而并非限制本发明。本文所使用单数形“一”及“该”也包含复数形式，除非上下文明确指出。应理解，在此说明书中所使用的术语“包含”和/或“包括”表明所述特征、整体、步骤、操作、要素和/或部件的存在，但非排除一个或多个其它特征、整体、步骤、操作、要素组件和/或其群组的存在或增加。
以下权利要求中的相应结构、材料、动作以及所有装置或步骤加功能要素的等价物旨在包含任何用于执行该功能的任何结构、材料、动作与其它特定所请求要素的组合。本发明的描述的目的在于图示和描述，并非意欲为详尽彻底的揭示或将本发明局限于所揭示的形式。许多不偏离本发明的范围和精神的修改和变化对于本领域的技术人员是显而易见的。选择和描述实施例以最佳地解释发明原理和实际应用，且使本领域的其他技术人员能理解本发明以用于具有适于所预期的特殊用途的各中变化的各种实施例。
本文描绘的流程图仅为一个实例。本文描述的图或步骤（或操作）可具有不偏离该发明的精神的各种变化。例如，可依不同顺序执行步骤，或可增加、删除或修改步骤。所有此等变化皆视为该所要求保护的发明的一部分。
尽管已描述本发明的优选实施例，但应理解本领域的技术人员可在现在及未来进行各种落在以下权利要求的范围中的改进和增强。这样的权利要求应解释为维持对首次描述的发明的适当保护。

Claims (20)

1.一种形成场效应晶体管的方法，所述方法包含以下步骤：
在衬底上形成栅极叠层；
在所述衬底上邻近所述栅极叠层的相对侧面形成间隔物；
在所述衬底上邻近在所述栅极叠层的第一侧面上的所述间隔物形成硅化物源极区域；
在所述衬底上邻近所述栅极叠层的第二侧面上的所述间隔物形成硅化物漏极区域；
在暴露的硅化物源极区域和暴露的硅化物漏极区域上外延生长硅；
在所述栅极叠层的硬掩模层和所述间隔物上形成衬里层；
去除所述衬里层的一部分以暴露所述硬掩模层的一部分；
去除所述硬掩模层的暴露部分以暴露所述栅极叠层的硅层；
去除暴露的硅以暴露所述栅极叠层的金属层的一部分、所述硅化物源极区域和所述硅化物漏极区域；以及
在所述栅极叠层的暴露金属层、暴露的硅化物源极区域和暴露的硅化物漏极区域上沉积导电材料。
2.根据权利要求1所述的方法，其中所述硅化物源极区域和所述硅化物漏极区域在第一轴上对准，所述第一轴正交对准于所述栅极叠层。
3.根据权利要求2所述的方法，其中所述栅极叠层的所述硬掩模层的暴露部分在第二轴上对准，所述第二轴平行对准于所述第一轴。
4.根据权利要求1所述的方法，其中所述栅极叠层包含：设置在所述衬底上的介电层、设置在所述介电层上的所述金属层、设置在所述介电层上的所述硅层以及设置在所述硅层上的所述硬掩模层。
5.根据权利要求1所述的方法，其中所述间隔物包含氮化物材料。
6.根据权利要求1所述的方法，其中所述间隔物包含第一氮化物层和第二氮化物层。
7.根据权利要求1所述的方法，其中去除所述衬里层的所述部分以暴露所述硬掩模层的一部分形成由所述衬里层和所述硬掩模层的暴露部分限定的腔。
8.根据权利要求1所述的方法，其中去除所述暴露的硅形成由所述衬里层和所述硅化物漏极区域限定的腔。
9.根据权利要求1所述的方法，其中所述衬底包含硅区域和绝缘体上硅沟槽区域(SOI)。
10.根据权利要求1所述的方法，其中所述源极区域和所述漏极区域在所述衬底的硅区域上，以及所述栅极叠层的所述暴露金属区域在所述衬底的SOI区域上。
11.根据权利要求1所述的方法，其中所述衬里层被形成在所述外延生长的硅上，以及所述方法还包含以下步骤：在去除所述衬里层的一部分以暴露所述硬掩模层的一部分之前，去除所述衬里层和所述外延生长的硅的一部分。
12.根据权利要求11所述的方法，其中通过化学机械抛光方法去除所述衬里层和所述外延生长的硅的所述部分。
13.根据权利要求1所述的方法，其中通过反应离子蚀刻方法去除暴露的硅。
14.根据权利要求1所述的方法，其中通过反应离子蚀刻方法去除所述硬掩模层的暴露部分。
15.一种场效应晶体管器件，所述器件包含：
设置在衬底上的栅极叠层；
设置在所述栅极叠层的第一末端上的第一接触部分；
设置在所述栅极叠层的第二末端上的第二接触部分，所述第一接触部分与所述第二接触部分沿沟道的宽度方向相距一距离(d)；以及
设置在所述器件的源极区域中的具有沿所述沟道的宽度方向的宽度(w)的第三接触部分，所述距离(d)大于所述宽度(w)。
16.根据权利要求15所述的器件，其中所述第一接触部分和所述第二接触部分接触所述栅极叠层的金属层。
17.根据权利要求15所述的器件，其中所述器件包括设置在所述器件的漏极区域中的具有沿所述沟道的宽度方向的宽度(w)的第四接触部分。
18.根据权利要求15所述的器件，其中所述源极区域包含硅化物材料。
19.根据权利要求15所述的器件，其中所述第三接触部分沿横轴排列，所述横轴对准所述栅极叠层的中间横轴。
20.根据权利要求15所述的器件，其中所述栅极叠层包括：设置在所述衬底上的介电层、设置在所述介电层上的金属层、设置在所述金属层上的硅层以及设置在所述硅层上的硬掩模层。
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