TW202040697A - 形成半導體裝置的方法 - Google Patents

形成半導體裝置的方法 Download PDF

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TW202040697A
TW202040697A TW109110326A TW109110326A TW202040697A TW 202040697 A TW202040697 A TW 202040697A TW 109110326 A TW109110326 A TW 109110326A TW 109110326 A TW109110326 A TW 109110326A TW 202040697 A TW202040697 A TW 202040697A
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安娜貝拉 維爾歐
仲 黃寶
瑞福 安佩坦斯
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比利時商愛美科公司
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Abstract

根據本發明之一態樣，提供一種用於形成一半導體裝置之方法，該半導體裝置包括垂直通道場效電晶體(FET)裝置，該方法包括： 在一基板上形成自該基板之一下源極/汲極半導體層垂直突出之複數個半導體結構，該等半導體結構經配置成具有複數個列及行之一陣列； 在該等列之至少一子集之間，蝕刻平行於該等列之金屬線溝槽； 在該等金屬線溝槽中形成金屬線用於接觸該下源極/汲極層； 形成圍封位於該下源極/汲極層上方之半導體結構通道部分的閘極結構；及 在位於該等通道部分上方之半導體結構上源極/汲極部分上形成上源極/汲極金屬接點。

Description

形成半導體裝置的方法
本發明係關於一種用於形成一半導體裝置之方法。
為提供更具功率及面積效率之電路設計，吾人在努力開發新電晶體裝置。一類型之非平面場效電晶體(FET)裝置係垂直通道FET裝置。
垂直通道FET裝置(亦指稱VFET裝置)包含垂直奈米線或奈米片FET (垂直NWFET或NSFET)，其具有至少部分或較佳地完全圍封一垂直定向之奈米線或奈米片半導體結構之一通道部分的一閘極。
歸因於其垂直定向之通道結構，VFET裝置之閘極長度不受線寬影響，而是受閘極電極之垂直尺寸或厚度影響。其次，一垂直電晶體裝置之源極及汲極部分相對於彼此垂直位移。由於此等及其他原因，VFET裝置可實施成密集且面積高效陣列。
為形成功能電路，需要接觸裝置之源極/汲極。然而，歸因於通道結構之垂直定向及源極及汲極之垂直位移，接觸下源極(或視情況汲極)可比接觸水平通道裝置更有挑戰。VFET之接觸通常依靠提供散佈於VFET陣列中之垂直金屬通路連接用於接觸各源極/汲極。然而，為允許低電阻連接，垂直通路需要具有某一最小橫截面，其可能難以適應密集陣列。
因此，本發明之一目的係提供一種即使在密集VFET陣列中亦允許低電阻下源極/汲極連接之方法。可自下文理解進一步及替代目的。
根據本發明之一態樣，提供一種用於形成一半導體裝置之方法，半導體裝置包括垂直通道場效電晶體(FET)裝置，方法包括： 在一基板上形成自基板之一下源極/汲極半導體層垂直突出之複數個半導體結構，半導體結構經配置成具有複數個列及行之一陣列； 在列之至少一子集之間，蝕刻平行於列之金屬線溝槽； 在金屬線溝槽中形成金屬線用於接觸下源極/汲極層； 形成圍封位於下源極/汲極層上方之半導體結構通道部分的閘極結構；及 在位於通道部分上方之半導體結構上源極/汲極部分上形成上源極/汲極金屬接點。
根據本發明方法，一陣列中之VFET之下源極/汲極可與穿過VFET陣列、平行於陣列之列及在陣列之列之間運行之水平延伸金屬線接觸。各金屬線可形成於蝕刻於基板中之一金屬線溝槽中。
因此，可經由金屬線之一垂直尺寸(即，高度)來調適源極/汲極連接之一電阻。即，一較大線高增大金屬線之橫截面積且因此減小電阻。
另一優點係沿一相同列配置之VFET可連接至一相同金屬線。此外，沿一對相鄰列配置之VFET可連接至形成於其等之間的一共同金屬線。與沿各列提供複數個個別垂直通路相比，此進一步支援允許面積高效之VFET陣列之目標。金屬線溝槽之各者可有利地跨陣列之複數個行延伸。
應瞭解，金屬線可因此在幾個選擇位置處(例如，在陣列之邊緣或陣列外部)連接至一後段製程(BEOL)互連結構。
一垂直通道FET裝置在此意謂包括一半導體結構之一裝置，半導體結構包括一下源極/汲極部分及一上源極/汲極部分及位於下源極/汲極部分與上源極/汲極部分中間且在下源極/汲極部分與上源極/汲極部分之間垂直延伸之一通道部分，且進一步包括沿通道部分垂直延伸之一閘極結構。閘極結構可至少部分圍封通道部分。特定言之，閘極結構可環繞通道部分，換言之，形成一環繞式閘極(GAA)結構。下源極/汲極部分及上源極/汲極部分及通道部分可與一共同垂直平面相交。通道部分經調適以(在裝置之使用中)在源極/汲極之間傳導電荷載子之一垂直流。
如本文中所使用，術語「垂直」表示平行於基板(即，一主延伸平面或其主/上表面)之一法線之一方向或定向(例如一表面、一尺寸或其他特徵之一方向或定向)。同時，術語「水平」表示平行於基板(即，一主延伸平面或其主表面)或等效地橫向於垂直方向之一方向或定向。同時，諸如「上方」、「上」、「頂部」及「下方」、「下」、「底部」之術語係指沿垂直方向所觀看之相對位置，且因此不隱含基板或裝置之一絕對定向。
根據本發明方法，半導體結構經配置成具有複數個(水平)列及(水平)行之陣列。換言之，方法包括形成具有半導體結構之列及行之一陣列。各半導體結構可因此配置於陣列之一列及一行之一交叉處。
列可沿基板在一第一水平方向(即，「一列方向」)上延伸。行可沿基板在一第二水平方向(即，「一行方向」)上延伸。列及行方向可彼此橫向。如在行方向上所觀看，列可等距間隔開。如在列方向上所觀看，行可等距間隔開。
金屬線溝槽可形成於陣列之每一列之間或陣列之列之僅一子集(即，列之一嚴格子集)之間。各金屬線溝槽可形成於一對各自相鄰列之間。例如，一第一金屬線溝槽可形成於一第一對相鄰列之間，且一第二金屬線溝槽可形成於一第二對相鄰列之間，等等。
方法可進一步包括在形成金屬線之前，沿列之該至少一子集在半導體結構側壁上形成一絕緣間隔物層。
因此，一絕緣間隔物可形成於沿列之該至少一子集配置之半導體結構之至少側壁上。
半導體結構之側壁上之一間隔物層實現金屬線與半導體結構(包含(例如)半導體結構之一基底部分)之間的至少一最小量電隔離。
另一優點係金屬線之高度可增大至超過金屬線溝槽之一深度，且半導體結構之側壁(尤其是其基底部分)與金屬線之間無短路風險。
間隔物層可較佳地形成於形成金屬線溝槽之前。藉此，間隔物層可在金屬線溝槽形成期間遮罩側壁。因此，半導體結構之側壁可免受金屬線溝槽形成期間所使用之程序步驟，諸如蝕刻下源極/汲極層之半導體材料。
方法可進一步包括： 形成嵌入半導體結構且覆蓋下源極/汲極層之一覆蓋層；及 在覆蓋層中形成溝槽，溝槽在列之該至少一子集之間延伸穿過覆蓋層； 其中藉由經由覆蓋層中之溝槽蝕刻下源極/汲極層來形成金屬線溝槽。
因此，覆蓋層可遮罩其中在金屬線溝槽形成期間將不形成金屬線溝槽之任何列之間的下源極/汲極層部分。覆蓋層可進一步覆蓋在金屬線溝槽形成期間延伸於一相同列之半導體結構之間的下源極/汲極層部分。覆蓋層可為一絕緣層，例如氧化物層或介電層。因此，可保留覆蓋層以在隨後程序步驟及最終裝置中充當一絕緣層。
可在覆蓋層中形成溝槽以暴露沿列之該至少一子集配置之半導體結構之側壁，其中方法可進一步包括在暴露於覆蓋層中之溝槽中之半導體結構之側壁上形成一絕緣間隔物層。
根據以上論述，間隔物層因此可在金屬線與半導體結構之暴露側壁之間提供電隔離。間隔物層可進一步在金屬線溝槽之(半導體材料)蝕刻期間遮罩側壁。
替代地，方法可進一步包括在形成覆蓋層之前，沈積覆蓋半導體結構及下源極/汲極層之一保形層。在形成覆蓋層之後，藉由相對於保形層選擇性蝕刻覆蓋層來形成覆蓋層中之溝槽。即，沈積不同於覆蓋層之一材料之一材料之一保形層允許在不暴露半導體結構之側壁之情況下在覆蓋層中形成溝槽。可在形成覆蓋層之前或形成覆蓋層之後藉由保形層之一垂直各向異性蝕刻來移除形成於下源極/汲極層上之保形層部分。因此，保形層可自下源極/汲極層選擇性移除且作為一間隔物層保留於半導體結構之側壁上。最遲可在蝕刻金屬線溝槽之前移除下源極/汲極層上之保形層部分。
金屬線可經形成有大於金屬線溝槽之一深度的一高度。因此，可減小金屬線之電阻。此較佳地與在半導體結構之側壁上形成絕緣間隔物層組合以減少短路風險。
形成金屬線可包括在金屬線溝槽中沈積金屬線材料及將所沈積之金屬線材料回蝕至通道部分下方之一位準。因此，金屬線之上表面可經回蝕至通道部分下方之一位準。因此，可產生一垂直空間用於沿通道部分形成閘極結構。
方法可進一步包括用一絕緣層覆蓋金屬線，其中閘極結構可形成於絕緣層上。因此，金屬線及閘極結構可彼此電絕緣。
各上源極/汲極金屬接點可形成於至少兩個連續列之兩個半導體結構上源極/汲極部分上。此實現一多通道VFET裝置。即，連續列之半導體結構之通道可連接於一電共同金屬線(形成為與一下源極/汲極層部分接觸)與一共同上源極/汲極金屬接點之間。
各上源極/汲極金屬接點可在該等金屬線之至少一者上且跨該等金屬線之至少一者延伸。因此，一金屬線可提供為接近連續半導體結構之基底部分。此可減小各多通道VFET裝置之一串聯電阻。
方法可進一步包括在形成金屬線(及金屬線溝槽)之前或形成金屬線(及金屬線溝槽)之後：在陣列之數個該等列之間的下源極/汲極層中形成溝槽及用一絕緣材料填充溝槽以藉此將下源極/汲極層分成數個下源極/汲極層部分，其中至少一金屬線溝槽及金屬線形成於各下源極/汲極層部分中。因此，可界定下源極/汲極層部分之個別「島狀區」(本技術中亦稱為「底部電極區域」)。藉由各下源極/汲極層部分接觸至少一金屬線，可經由一低電阻連接來接取各「島狀區」之VFET之下源極/汲極。此等絕緣材料填充之溝槽可較佳地形成為完全延伸穿過下源極/汲極層而至下方之一基板層中。此可提高下源極/汲極層部分之間的程度或電隔離。
尤其可在由各下源極/汲極部分支撐之半導體結構之每一列之間形成一金屬線溝槽及一金屬線。因此，各下源極/汲極部分可由一個以上金屬線並行接取。此允許進一步減小裝置串聯電阻。
金屬線溝槽之蝕刻可包括蝕刻下源極/汲極層，其中金屬線形成於下源極/汲極層中之金屬線溝槽中。下源極/汲極層之蝕刻可(例如)僅部分延伸穿過下源極/汲極層。
金屬線溝槽之蝕刻亦可包括： 蝕刻穿過下源極/汲極層而至一下伏基板層以藉此在下源極/汲極層中形成一上溝槽部分及在下伏基板層中形成一下溝槽部分；及 執行下溝槽部分之側壁之一橫向回蝕以形成加寬下溝槽部分， 其中金屬線形成於至少加寬下溝槽部分中。
藉此，甚至更寬金屬線可嵌入於基板中。金屬線可形成為至少自一下側接觸下源極/汲極層。
若下伏基板層及下源極/汲極層由不同半導體材料形成，則可促進橫向回蝕，例如，Si1-x Gex 形成下伏基板層且Si1-y Gey 形成下源極/汲極層，其中0≤x≤1且0≤y≤1 ，且x≠y。
方法可進一步包括在各金屬線之一縱向方向上切割各金屬線以藉此在各加寬下溝槽部分中形成兩個分離平行金屬線部分。因此，可在各金屬線溝槽中形成兩個電分離金屬線。若期望單獨接取相鄰列中之VFET之下源極/汲極，此可為有利的。
根據本發明之另一態樣，提供一種半導體裝置，其包括： 一基板； 複數個VFET裝置，其等包括： 複數個半導體結構，其等自基板之一下源極/汲極半導體層垂直突出，半導體結構經配置成具有複數個列及行之一陣列， 閘極結構，其等圍封位於下源極/汲極層上方之半導體結構通道部分，及 上源極/汲極金屬接點，其等位於通道部分上方之半導體結構上源極/汲極部分上； 金屬線溝槽，其等形成於下源極/汲極半導體層中且平行於列延伸於列之至少一子集之間； 金屬線，其等配置於金屬線溝槽中，金屬線接觸下源極/汲極層。
上文結合方法態樣及其實施例所論述之上述述細節及優點對應地適用於進一步裝置態樣，因此參考上文。
現將參考附圖描述包括VFET裝置之一半導體裝置及用於形成半導體裝置之一方法。除非另有說明，否則附圖展示一基板100之一區段之透視圖，基板100包括VFET之垂直半導體結構之一陣列(或一陣列之至少一部分)。除非另有指示，否則延伸穿過基板100之區段之繪示平面為所有附圖共有。應瞭解，基板100通常可呈現超出所繪示之區段、比所展示更大很多之一橫向/水平延伸。應進一步注意，所展示結構之相對尺寸(例如層之相對厚度)僅供示意且為使繪示清楚，可不同於一實體裝置結構。
圖1展示用於程序之起始基板100。基板100可為一半導體基板，即，包括至少一半導體層之一基板。基板100可為(例如)由一塊狀基板形成之一單層半導體基板。然而，基板亦可為(例如)由一塊狀基板上之一磊晶生長半導體層或一絕緣體上半導體(SOI)基板形成之一多層基板。基板100可(例如)包括矽(Si)、鍺(Ge)或矽鍺(SiGe)之一層。
如圖1中進一步所展示，複數個半導體結構110已形成於基板100上。半導體結構110自基板100之一下源極/汲極半導體層102垂直突出。
可藉由圖案化磊晶下半導體層、中間半導體層及上半導體層之一堆疊來形成圖1中所展示之特定半導體結構110，使得各半導體結構110包括一下部分或基底部分112、一中間部分114及一上部分116。一柱110之下部分112及上部分116可分別用於形成最終VFET之下源極/汲極及上源極/汲極，且因此可在下文中分別指稱下源極/汲極部分112及上源極/汲極部分116。類似地，中間層114可用於容納最終VFET之通道，且因此可在下文中指稱通道部分114。因此，通道部分114配置於源極/汲極部分112、116中間且在兩者之間垂直延伸。換言之，源極/汲極部分112、116位於通道部分114之垂直對置端處。本發明方法適用於無接面裝置及反轉式裝置，且可因此摻雜柱110。層112、114、116可(例如)藉由CVD、物理汽相沈積(PVD)或有機金屬汽相磊晶(MOVPE)形成。實例層堆疊包含一SiGe/Si/SiGe層堆疊、一SiGe/Ge/SiGe層堆疊或一SiGe/SiGe/SiGe層堆疊，其中中間層具有不同於下層及上層之一Ge含量。然而，應注意，半導體結構亦可圖案化於包括更多層或更少層之層堆疊中且甚至圖案化於一單一磊晶半導體層中。
下源極/汲極層102可根據將形成之VFET裝置之類型(即，p型或n型)來重度摻雜一導電類型。下源極/汲極層102可由與界定半導體結構110之一或多個層分離之另一磊晶半導體層形成。然而，下源極/汲極層102亦可由(例如)在圖案化半導體結構110之後保留之層堆疊之下層(例如一下SiGe層)之一厚度部分形成。無論如何，下源極/汲極層102及自其突出之下源極/汲極部分112可一起界定用於待形成之VFET之下源極/汲極或下源極/汲極區域。
半導體結構110之形成可依一習知方式進行，例如藉由圖案化(例如使用微影及蝕刻)形成於基板100上之一或多個磊晶半導體層。例如，半導體結構110之圖案化可包括在一或多個磊晶半導體層上界定一圖案化遮罩(諸如一硬遮罩(例如Si3 N4 、旋塗碳或碳基圖案化膜之硬遮罩))及在使用圖案化遮罩作為一蝕刻遮罩時蝕刻一或多個磊晶半導體層。如圖1中所展示，圖案化遮罩之遮罩部分可保留於圖案化通道結構之頂部上作為帽蓋120。
如所展示，半導體結構110可形成為垂直定向之「奈米片」，即，具有一長矩形橫截面形狀。然而，亦可使半導體結構110形成為垂直定向之「奈米線」，即，具有一正方形或圓形橫截面形狀。為易於閱讀，將半導體結構110可在下文中指稱「柱」。
如圖1中所指示，柱110經形成為具有複數個列R1、R2、R3、R4及行C1、C2、C3之一陣列104。列R1至R4平行於一列方向R延伸。行平行於一行方向C延伸。列R1至R4可沿行方向C定距間隔。行C1至C3可沿列方向R定距間隔。因此，各柱110配置於一列及一行之一交叉處。應注意，圖1可描繪陣列104之僅一小部分，陣列104通常可包括柱110之數百或數千個列及行。
在圖2中，柱110已嵌入於一覆蓋層122中。覆蓋層122可通常由一絕緣材料(例如SiO2 或另一習知低K介電質)形成。覆蓋層122可藉由沈積絕緣材料(例如藉由CVD)，接著回蝕及/或拋光以減小覆蓋層122之一厚度以暴露柱110之上表面(或如同所繪示之情況，暴露形成於柱110上之帽蓋120)來形成。
一遮罩124已形成於絕緣層122上方以界定列之一子集(例如列R1及R2及R3及R4等等)上方及列之子集之間的開口。開口界定將形成於列之間的下源極/汲極層102中之金屬線溝槽之位置。遮罩可為一習知類型，諸如使用微影圖案化之一基於光阻劑之遮罩。
在圖3中，溝槽126已形成於覆蓋層122中，溝槽126延伸穿過列之子集之間的覆蓋層122。可藉由經由界定於遮罩124中之開口蝕刻覆蓋層122來形成溝槽126。可使用適合於蝕刻介電材料之任何習知蝕刻(較佳地一乾式蝕刻程序)來蝕刻溝槽126。可在形成溝槽126之後移除遮罩124。溝槽126可暴露列之子集之間的下源極/汲極層102。如圖3中所指示，各溝槽126之一寬度可使得沿溝槽126配置之柱110之側壁被暴露。
在圖4中，已形成一絕緣間隔物層128來覆蓋暴露於覆蓋層122中之溝槽126中之柱110之側壁。如所展示，間隔物層128可沈積為覆蓋溝槽126之側壁之一保形層。間隔物層128可進一步覆蓋覆蓋層122之一上表面及暴露於溝槽126之底部處之下源極/汲極層102之表面部分。間隔物層128可為氧化物層或氮化物層，例如藉由ALD形成之SiO2 或SiN層。
在圖5中，已移除沈積於水平定向表面上之間隔物層128之部分，使得間隔物層128之部分保留以在溝槽126之側壁上形成一絕緣側壁間隔物128且因此覆蓋先前暴露於溝槽126中之柱110之側壁。此可藉由原初沈積之間隔物層128之一垂直各向異性蝕刻(例如一短乾式蝕刻步驟)達成。因此，下源極/汲極層102之上表面部分102a暴露於溝槽126之底部處。
在圖6中，金屬線溝槽130已蝕刻於列R1及R2、R3及R4等等之子集之間。因此，各金屬線溝槽130平行於一對各自相鄰列且在各自相鄰列對之間延伸。金屬線溝槽130可藉由經由覆蓋層122中之溝槽126刻蝕至下源極/汲極層102中來形成。可使用適合於半導體刻蝕之任何習知濕式或乾式刻蝕程序，諸如允許刻蝕包含(但不限於)構成蝕刻劑之SF6 或CF4 之Si或SiGe之刻蝕程序。在蝕刻期間，側壁間隔物128可遮罩面向溝槽126之柱110之側壁且因此抵制柱110之蝕刻。如所展示，蝕刻可部分延伸穿過下源極/汲極層102，使得下源極/汲極層102之一厚度部分保留於各溝槽130下方。然而，亦可使蝕刻完全延伸穿過下源極/汲極層102，例如停止於下源極/汲極層102與基板100之下伏半導體層之間的介面處。
在圖7中，金屬線132已形成於金屬線溝槽130中。因此，金屬線132可形成為與下源極/汲極層102實體及電接觸。如所展示，金屬線132可形成有大於金屬線溝槽130之一深度的一垂直尺寸或高度。因此，金屬線132可與柱110之基底部分/下源極/汲極部分112垂直重疊。在此情況中，側壁間隔物128可提供金屬線132與下源極/汲極部分112之側壁之間的隔離。金屬線132可藉由在金屬線溝槽130中沈積金屬線材料(例如Al、Cu、W或Ru)且將所沈積之金屬線材料回蝕至柱110之通道部分114下方之一位準來形成。可使用任何習知金屬蝕刻程序，其允許相對於(例如)形成側壁間隔物128及覆蓋層122之材料選擇性蝕刻金屬。
在圖8中，金屬線132已由一絕緣材料覆蓋以藉此封閉覆蓋層122中之溝槽126。例如，可沈積相同於形成原初沈積之覆蓋層122之一絕緣材料來填充溝槽126。所沈積之絕緣材料可經拋光(例如藉由CMP)且視情況經回蝕以形成嵌入柱110且暴露帽蓋120之覆蓋層122。
應注意，若覆蓋層122由最終裝置不期望之一類型之一材料(諸如一有機旋塗層或其類似者)形成，則可首先剝離覆蓋層122且接著重新沈積覆蓋層122作為一適合絕緣材料(諸如SiO2 或另一低k介電質)之一新覆蓋層122。
在圖9中，溝槽133已形成於陣列104之數個列之間的下源極/汲極層102中。可藉由首先在覆蓋層122中之所要位置處蝕刻溝槽且其後藉由經由覆蓋層122中之溝槽蝕刻來蝕刻溝槽133來形成溝槽133。可採用類似於用於形成金屬線溝槽130之蝕刻程序之一蝕刻程序。溝槽133隨後已由一絕緣材料(較佳地相同於覆蓋層122之一材料)填充。因此，下源極/汲極層102已分成數個下源極/汲極層部分102a。由絕緣材料填充之溝槽133可指稱淺溝槽絕緣(STI)結構。溝槽133可較佳地完全延伸穿過下源極/汲極層102而至下方基板100中以確保下源極/汲極層部分102a之間的一可靠隔離。如所展示，依陣列104之每第二列之一週期性形成溝槽133。因此，一個金屬線溝槽130及金屬線132形成於各下源極/汲極層部分102a中。然而，此僅表示一實例且亦可形成具有一較低週期性之溝槽133，諸如每三列、每四列等等一個。
如圖9中進一步所展示，已回蝕覆蓋層122以暴露柱110之上源極/汲極部分116及通道部分114。亦可在一相同或隨後蝕刻步驟中自柱110之上源極/汲極部分116及通道部分114移除任何側壁間隔物部分128。
在圖10中，已形成閘極結構134來圍封柱110之通道部分114。如所展示，閘極結構134可較佳地形成為在一圓周方向上完全圍封通道部分114。閘極結構134可形成為沿陣列104之行C1至C3、跨陣列104之列延伸之長形閘極結構線。閘極結構134可包括一習知閘極堆疊，其包括(例如)一閘極介電層及由一或多個閘極導體形成之一閘極電極。閘極介電材料包含(例如) HfO2 、ZrO2 、Al2 O3 或其他高K介電材料。閘極介電層可藉由任何習知沈積程序(例如藉由ALD)沈積為一保形薄膜。閘極導體包含(例如) p型有效功函數(EWF)金屬(諸如TiN、TaN、TiTaN)或n型EWF金屬(諸如Al、TiAl、TiC或TiAlC)或化合物層(諸如TiN/TiAl或TiN/TaN/TiAl)。閘極導體進一步包含填充金屬，諸如W、Al、Co、Ni、Ru或該等材料之兩者或更多者之一合金。可藉由任何習知沈積程序(例如藉由ALD、CVD或PVD)來沈積閘極導體。
可藉由沈積閘極堆疊且其後圖案化所沈積之閘極堆疊以形成具有所要水平尺寸之閘極結構134來形成閘極結構134。然而，如本技術中本身已知，亦可使用一替換金屬閘極(RMG)流，其中可首先形成虛設閘極(例如，包括多晶矽)且隨後由最終閘極堆疊替換虛設閘極。
在形成閘極結構134之後，可由一絕緣層136覆蓋閘極結構。絕緣層136可有利地由相同於覆蓋層122之一材料形成，使得覆蓋層122及絕緣層136一起界定一共同絕緣層138。可執行回蝕及/或拋光以平面化絕緣層138。
在圖11中，一蝕刻遮罩140已形成於絕緣層138上方。蝕刻遮罩140界定將用於界定VFET裝置之上源極/汲極接點之開口。蝕刻遮罩140可為一習知類型，諸如使用微影圖案化之一基於光阻劑之遮罩。
在圖12中，已藉由向下蝕刻穿過蝕刻遮罩140而至上源極/汲極部分116且用一接觸金屬(諸如(例如) Al、Co、Ni、W或Ru)填充因此所形成之溝槽來形成源極/汲極接點或「頂部電極」142。
如所展示，各上源極/汲極金屬接點142可形成於屬於相鄰列中之相互對置柱110之一對上源極/汲極部分116上。因此，各源極/汲極金屬接點142可在形成於相鄰列之間的一各自金屬線132上方且跨各自金屬線132延伸。
然而，源極/汲極金屬接點142之其他設計亦可行。例如，上源極/汲極金屬接點142可形成為僅接觸一單一柱110之上源極/汲極部分116或兩個以上柱110之上源極/汲極部分116。
可視情況在沈積接觸金屬之前在上源極/汲極部分116上磊晶生長摻雜半導體材料以形成擴大上源極/汲極部分來促進與源極/汲極接觸結構142電接觸。
其後，程序可繼續本技術中本身已知之BEOL處理等等。此外，金屬線132可藉由垂直通路適合位置(例如，在陣列104之邊緣處或陣列104之外部)連接至BEOL互連結構。
圖13至圖18繪示用於形成包括VFET裝置之一半導體裝置之一方法之一變型。圖13至圖18繪示沿一行方向、跨數個列R1至R3等等取得之陣列104之一部分之橫截面之平面圖。除非另有說明，否則圖1至圖12及圖13至圖18中之相同元件符號係指相同元件。
方法大體上依相同於上文之一方式進行，直至形成金屬線溝槽130之階段。圖13展示在一覆蓋層122中形成溝槽126之後的柱110。與上述方法相比，溝槽126已形成於陣列104之每一列之間且因此在橫截面圖中不可見。一保形絕緣層228已形成為覆蓋柱110及暴露於溝槽126中之下源極/汲極層102之上表面部分。保形絕緣層228可依對應於間隔物層128之一方式形成。然而，根據一變型，層228可形成於覆蓋層112及溝槽126之前。其後，可沈積覆蓋層122，其中可藉由相對於保形層228選擇性蝕刻覆蓋層122來形成溝槽126。間隔物層228可(例如)形成為一SiN層，其中可相對於間隔物層228選擇性蝕刻SiO2 之一覆蓋層122。
在圖14中，已在溝槽126之底部處打開保形層228，其中保形層228之剩餘部分保留於柱110 (及溝槽126)之側壁上以在其上形成一側壁間隔物層228。隨後，已在柱110之每一列之間形成金屬線溝槽130及金屬線132。
圖15展示沈積於金屬線132上之一選用絕緣障壁襯層150以視需要抵制形成金屬線132之材料污染覆蓋層122。
在圖16中，一遮罩層160已形成於柱110及金屬線132上方。數個溝槽開口162已形成於遮罩層160中，各溝槽開口162形成於一對列之間的各自一金屬線132上方。遮罩層160可(例如)為一旋塗層或層堆疊，諸如一旋塗碳(SOC)及旋塗玻璃(SOG)。可使用習知微影及蝕刻來形成溝槽開口162。
在圖17中，已在一金屬蝕刻中移除溝槽開口162下方之金屬線132，且隨後已蝕刻下源極/汲極層102之下伏半導體材料以形成將下源極/汲極層102分成分離下源極/汲極層部分102a之溝槽164。隨後，可移除遮罩層160。若已形成選用障壁襯層150，則可首先(例如)藉由一短氧化物或介電質蝕刻步驟打開障壁襯層150以藉此暴露各自金屬線132。
在圖18中，溝槽164已由亦嵌入柱110之一絕緣層122填充。其後，方法可繼續閘極結構形成及上源極/汲極接點形成，如上文所闡述。
圖19至圖22繪示用於形成包括VFET裝置之一半導體裝置之一方法之另一變型。圖19至圖23繪示沿一行方向、跨數個列R1至R3等等取得之陣列104之一部分之橫截面之平面圖。除非另有說明，否則圖1至圖12及圖19至圖23中之相同元件符號係指相同元件。
方法大體上依相同於上文之一方式進行，然而不同之處在於形成金屬線溝槽130及金屬線132之方式。圖19展示形成一覆蓋層122之後的柱110。溝槽126已形成於陣列104之數個列之間。
進一步言之，已藉由蝕刻穿過下源極/汲極層102而至下方基板100中來形成金屬線溝槽130以藉此在下源極/汲極層102中形成一上溝槽部分130c且在基板100之下伏層中形成一下溝槽部分130b。隨後，可對下溝槽部分130b之側壁執行一橫向回蝕以形成加寬下溝槽部分130b (由下溝槽部分130b中之箭頭示意性指示)。下源極/汲極層102及基板100之初始蝕刻可依相同於上文所論述之方式之一方式達成，例如藉由允許蝕刻半導體材料(諸如SiGe及Si)之一習知濕式或乾式蝕刻程序。橫向回蝕可包括藉由相對於下源極/汲極層102選擇性各向同性蝕刻基板100。例如，若下源極/汲極層102由SiGe形成且基板100之經蝕刻厚度部分由Si形成，則可提供下源極/汲極層102與基板100之間的蝕刻對比。在金屬線溝槽130之蝕刻期間，一間隔物層128可遮罩柱110之側壁，如上文所論述。
在圖20中，金屬線132已形成於加寬下溝槽部分130b中。如所展示，各金屬線132接觸下源極/汲極層102之一下側。
圖21及圖22展示可如何在各金屬線132中形成一切口，切口在金屬線之一縱向方向上(即，在列方向R上)延伸以藉此在各加寬下溝槽部分130b中形成兩個分離平行金屬線部分132a、132b。在圖21中，已形成界定溝槽形開口174之一遮罩172，各開口暴露各金屬線132之一縱向部分之一上表面。遮罩層172可(例如)為一旋塗層或層堆疊，諸如一旋塗碳(SOC)及旋塗玻璃(SOG)。可使用習知微影及蝕刻來形成溝槽開口174。在圖22中，已藉由透過溝槽開口174執行一金屬蝕刻來切割金屬線132。其後，方法可繼續用絕緣材料覆蓋金屬線132a、132b及進一步閘極結構形成及上源極/汲極接點形成，如上文所闡述。
在上文中，已主要參考有限數目個實例描述本發明。然而，熟習技術者應易於瞭解，除上文所揭示之實例之外的實例同樣可在由隨附申請專利範圍界定之本發明之範疇內。
100:基板 102:下源極/汲極半導體層 102a:上表面部分/下源極/汲極層部分 104:陣列 110:半導體結構/柱 112:下部分/基底部分/下源極/汲極部分 114:中間部分/通道部分 116:上部分/上源極/汲極部分/下源極/汲極層部分 120:帽蓋 122:絕緣層/覆蓋層 124:遮罩 126:溝槽 128:間隔物層 130:金屬線溝槽 130b:下溝槽部分 130c:上溝槽部分 132:金屬線 132a:金屬線部分 132b:金屬線部分 133:溝槽 134:閘極結構 136:絕緣層 138:絕緣層 140:蝕刻遮罩 142:源極/汲極金屬接點/源極/汲極接觸結構 150:絕緣障壁襯層 160:遮罩層 162:溝槽開口 164:溝槽 172:遮罩/遮罩層 174:溝槽開口 228:間隔物層/保形絕緣層 C:行方向 C1:行 C2:行 C3:行 R:列方向 R1:列 R2:列 R3:列 R4:列
參考附圖，將透過以下繪示性而非限制性詳細描述較佳理解本發明之上述及額外目的、特徵及優點。在圖式中，除非另有說明，否則相同元件符號將用於相同元件。
圖1至圖12繪示用於形成一半導體裝置之一方法。
圖13至圖18繪示用於形成一半導體裝置之另一方法。
圖19至圖22繪示用於形成一半導體裝置之另一方法。
102a:上表面部分/下源極/汲極層部分
116:上部分/上源極/汲極部分/下源極/汲極層部分
132:金屬線
138:絕緣層
142:源極/汲極金屬接點/源極/汲極接觸結構
R1:列
R2:列
R3:列
R4:列

Claims (15)

  1. 一種用於形成一半導體裝置之方法，該半導體裝置包括垂直通道場效電晶體(FET)裝置，該方法包括： 在一基板(100)上形成自該基板之一下源極/汲極半導體層(102)垂直突出之複數個半導體結構(110)，該等半導體結構經配置成具有複數個列(R1、R2、R3)及行(C1、C2、C3)之一陣列(104)； 在該等列之至少一子集之間，蝕刻平行於該等列之金屬線溝槽(130)； 在該等金屬線溝槽(130)中形成與該下源極/汲極層(102)接觸之金屬線(132)； 形成圍封位於該下源極/汲極層(102)上方之半導體結構通道部分(114)的閘極結構(134)；及 在位於該等通道部分上方之半導體結構上源極/汲極部分(116)上形成上源極/汲極金屬接點(142)。
  2. 如請求項1之方法，其進一步包括在形成該等金屬線(132)之前，沿列之該至少一子集在半導體結構側壁上形成一絕緣間隔物層(128、228)。
  3. 如請求項2之方法，其中在形成該等金屬線溝槽(130)之前形成該間隔物層(128、228)。
  4. 如前述請求項中任一項之方法，其進一步包括： 形成嵌入該等半導體結構(110)且覆蓋該下源極/汲極層(102)之一覆蓋層(122)；及 在該覆蓋層(122)中形成溝槽(126)，該等溝槽(126)延伸穿過該等列之該至少一子集之間的該覆蓋層(122)； 其中形成該等金屬線溝槽(130)包括經由該覆蓋層(122)中之該等溝槽(126)蝕刻該下源極/汲極層(102)。
  5. 如請求項4之方法，其中該覆蓋層(122)中之該等溝槽(126)暴露沿該等列之該至少一子集配置之該等半導體結構(110)之側壁，且該方法進一步包括在暴露於該覆蓋層(122)中之該等溝槽(126)中之該等半導體結構(110)之側壁上形成一絕緣間隔物層(128)。
  6. 如請求項4之方法，其進一步包括在形成該覆蓋層(122)之前，沈積覆蓋該等半導體結構(110)及該下源極/汲極層(102)之一保形層(228)，且 其中在形成該覆蓋層(122)之後，藉由相對於該保形層(228)選擇性蝕刻該覆蓋層(122)來形成該覆蓋層(122)中之該等溝槽(126)。
  7. 如前述請求項中任一項之方法，其中該等金屬線經形成有大於該等金屬線溝槽之一深度的一高度。
  8. 如前述請求項中任一項之方法，其中形成該等金屬線包括在該等金屬線溝槽中沈積金屬線材料及將該所沈積之金屬線材料回蝕至該等通道部分下方之一位準。
  9. 如前述請求項中任一項之方法，其進一步包括用一絕緣層(122)覆蓋該等金屬線(132)，其中該等閘極結構形成於該絕緣層上。
  10. 如前述請求項中任一項之方法，其中各上源極/汲極金屬接點(142)形成於至少兩個連續列(R1、R2)之半導體結構上源極/汲極部分(116)上。
  11. 如請求項10之方法，其中各上源極/汲極金屬接點(142)在該等金屬線(132)之至少一者上方且跨該等金屬線(132)之至少一者延伸。
  12. 如前述請求項中任一項之方法，其進一步包括在形成該等金屬線之前或形成該等金屬線之後：在該陣列(104)之數個該等列之間的該下源極/汲極層(102)中形成溝槽(133)及用一絕緣材料填充形成於該數個列之間的該等溝槽以藉此將該下源極/汲極層分成數個下源極/汲極層部分(102a)，其中至少一金屬線溝槽(130)及金屬線(132)形成於各下源極/汲極層部分(102a)中。
  13. 如請求項12之方法，其中一金屬線溝槽(130)及一金屬線(132)形成於由各下源極/汲極部分(102a)支撐之半導體結構(110)之每一列之間。
  14. 如前述請求項中任一項之方法，其中蝕刻該等金屬線溝槽(130)包括： 蝕刻穿過該下源極/汲極層(102)而至下方該基板(100)中以藉此在該下源極/汲極層(102)中形成一上溝槽部分(130c)及在該基板(100)中形成一下溝槽部分(130b)；及 執行該等下溝槽部分(130b)之側壁之一橫向回蝕以形成加寬下溝槽部分(130b)， 其中該等金屬線(132)形成於至少該等加寬下溝槽部分(130b)中。
  15. 如請求項14之方法，其進一步包括在各金屬線(132)之一縱向方向上切割各金屬線(132)以藉此在各加寬下溝槽部分(130b)中形成兩個分離平行金屬線部分(132a、132b)。
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