CN102822976A - 用于场效应晶体管器件的自动对准接触 - Google Patents
用于场效应晶体管器件的自动对准接触 Download PDFInfo
- Publication number
- CN102822976A CN102822976A CN2011800160734A CN201180016073A CN102822976A CN 102822976 A CN102822976 A CN 102822976A CN 2011800160734 A CN2011800160734 A CN 2011800160734A CN 201180016073 A CN201180016073 A CN 201180016073A CN 102822976 A CN102822976 A CN 102822976A
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- Prior art keywords
- gate stack
- layer
- silicon
- hard mask
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005669 field effect Effects 0.000 title claims abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 33
- 239000010703 silicon Substances 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 10
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000004020 conductor Substances 0.000 claims abstract description 3
- 239000000758 substrate Substances 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 10
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 239000012212 insulator Substances 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims 2
- 125000006850 spacer group Chemical group 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910005881 NiSi 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28114—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor characterised by the sectional shape, e.g. T, inverted-T
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Composite Materials (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/757,201 | 2010-04-09 | ||
US12/757,201 US8367508B2 (en) | 2010-04-09 | 2010-04-09 | Self-aligned contacts for field effect transistor devices |
PCT/US2011/028464 WO2011126682A1 (en) | 2010-04-09 | 2011-03-15 | Self-aligned contacts for field effect transistor devices |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102822976A true CN102822976A (zh) | 2012-12-12 |
CN102822976B CN102822976B (zh) | 2016-09-07 |
Family
ID=44760300
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201180016073.4A Expired - Fee Related CN102822976B (zh) | 2010-04-09 | 2011-03-15 | 用于场效应晶体管器件的自动对准接触 |
Country Status (7)
Country | Link |
---|---|
US (2) | US8367508B2 (zh) |
JP (1) | JP5764198B2 (zh) |
CN (1) | CN102822976B (zh) |
DE (1) | DE112011100421B4 (zh) |
GB (1) | GB2492514C (zh) |
TW (2) | TWI538064B (zh) |
WO (1) | WO2011126682A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104979400A (zh) * | 2014-04-07 | 2015-10-14 | 万国半导体股份有限公司 | 使用硅化物源极和本体接触区的封闭式晶胞横向mosfet |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8664077B2 (en) * | 2012-02-14 | 2014-03-04 | Nanya Technology Corp. | Method for forming self-aligned overlay mark |
US8901627B2 (en) | 2012-11-16 | 2014-12-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Jog design in integrated circuits |
US9324709B2 (en) * | 2013-08-19 | 2016-04-26 | Globalfoundries Inc. | Self-aligned gate contact structure |
CN108987261B (zh) * | 2017-06-01 | 2022-05-17 | 联华电子股份有限公司 | 半导体结构及其制造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6207543B1 (en) * | 1997-06-30 | 2001-03-27 | Vlsi Technology, Inc. | Metallization technique for gate electrodes and local interconnects |
US20050070082A1 (en) * | 2003-09-30 | 2005-03-31 | Thorsten Kammler | Semiconductor device having a nickel/cobalt silicide region formed in a silicon region |
US20060138522A1 (en) * | 2004-12-23 | 2006-06-29 | Kim Dong-Chan | Flash memory devices comprising pillar patterns and methods of fabricating the same |
US20090218640A1 (en) * | 2008-02-29 | 2009-09-03 | Roland Hampp | Self Aligned Silicided Contacts |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61133664A (ja) * | 1984-12-03 | 1986-06-20 | Nec Corp | 半導体集積回路 |
JPH0513017Y2 (zh) * | 1985-10-04 | 1993-04-06 | ||
WO1997014185A1 (en) | 1995-10-11 | 1997-04-17 | Paradigm Technology, Inc. | Semiconductor device with a planarized interconnect with poly-plug and self-aligned contacts |
JPH1079505A (ja) * | 1996-09-05 | 1998-03-24 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
JPH11177089A (ja) * | 1997-12-16 | 1999-07-02 | Hitachi Ltd | 半導体装置の製造方法 |
US20020031909A1 (en) | 2000-05-11 | 2002-03-14 | Cyril Cabral | Self-aligned silicone process for low resistivity contacts to thin film silicon-on-insulator mosfets |
US6503833B1 (en) | 2000-11-15 | 2003-01-07 | International Business Machines Corporation | Self-aligned silicide (salicide) process for strained silicon MOSFET ON SiGe and structure formed thereby |
JP3669919B2 (ja) * | 2000-12-04 | 2005-07-13 | シャープ株式会社 | 半導体装置の製造方法 |
US6403485B1 (en) | 2001-05-02 | 2002-06-11 | Chartered Semiconductor Manufacturing Ltd | Method to form a low parasitic capacitance pseudo-SOI CMOS device |
US6518151B1 (en) | 2001-08-07 | 2003-02-11 | International Business Machines Corporation | Dual layer hard mask for eDRAM gate etch process |
US6627502B1 (en) * | 2002-10-24 | 2003-09-30 | Taiwan Semiconductor Manufacturing Company | Method for forming high concentration shallow junctions for short channel MOSFETs |
JP2004152790A (ja) * | 2002-10-28 | 2004-05-27 | Toshiba Corp | 半導体装置、及び、半導体装置の製造方法 |
US6800530B2 (en) | 2003-01-14 | 2004-10-05 | International Business Machines Corporation | Triple layer hard mask for gate patterning to fabricate scaled CMOS transistors |
US7098114B1 (en) | 2004-06-22 | 2006-08-29 | Integrated Device Technology, Inc. | Method for forming cmos device with self-aligned contacts and region formed using salicide process |
TW200620478A (en) | 2004-08-20 | 2006-06-16 | Koninkl Philips Electronics Nv | Self-aligned epitaxially grown bipolar transistor |
US7361958B2 (en) | 2004-09-30 | 2008-04-22 | Intel Corporation | Nonplanar transistors with metal gate electrodes |
US7470943B2 (en) | 2005-08-22 | 2008-12-30 | International Business Machines Corporation | High performance MOSFET comprising a stressed gate metal silicide layer and method of fabricating the same |
US20070178634A1 (en) * | 2006-01-31 | 2007-08-02 | Hyung Suk Jung | Cmos semiconductor devices having dual work function metal gate stacks |
US7615831B2 (en) | 2007-10-26 | 2009-11-10 | International Business Machines Corporation | Structure and method for fabricating self-aligned metal contacts |
JP2009302320A (ja) * | 2008-06-13 | 2009-12-24 | Renesas Technology Corp | 半導体装置およびその製造方法 |
US20100038715A1 (en) | 2008-08-18 | 2010-02-18 | International Business Machines Corporation | Thin body silicon-on-insulator transistor with borderless self-aligned contacts |
US8062975B2 (en) * | 2009-04-16 | 2011-11-22 | Freescale Semiconductor, Inc. | Through substrate vias |
JP2011146465A (ja) * | 2010-01-13 | 2011-07-28 | Fujitsu Semiconductor Ltd | 半導体装置およびその製造方法 |
US8673725B2 (en) * | 2010-03-31 | 2014-03-18 | Tokyo Electron Limited | Multilayer sidewall spacer for seam protection of a patterned structure |
-
2010
- 2010-04-09 US US12/757,201 patent/US8367508B2/en active Active
-
2011
- 2011-03-15 JP JP2013503757A patent/JP5764198B2/ja not_active Expired - Fee Related
- 2011-03-15 CN CN201180016073.4A patent/CN102822976B/zh not_active Expired - Fee Related
- 2011-03-15 GB GB201219007A patent/GB2492514C/en not_active Expired - Fee Related
- 2011-03-15 DE DE112011100421T patent/DE112011100421B4/de not_active Expired - Fee Related
- 2011-03-15 WO PCT/US2011/028464 patent/WO2011126682A1/en active Application Filing
- 2011-04-07 TW TW104127119A patent/TWI538064B/zh not_active IP Right Cessation
- 2011-04-07 TW TW100112069A patent/TWI527124B/zh not_active IP Right Cessation
-
2012
- 2012-07-20 US US13/554,305 patent/US8901626B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6207543B1 (en) * | 1997-06-30 | 2001-03-27 | Vlsi Technology, Inc. | Metallization technique for gate electrodes and local interconnects |
US20050070082A1 (en) * | 2003-09-30 | 2005-03-31 | Thorsten Kammler | Semiconductor device having a nickel/cobalt silicide region formed in a silicon region |
US20060138522A1 (en) * | 2004-12-23 | 2006-06-29 | Kim Dong-Chan | Flash memory devices comprising pillar patterns and methods of fabricating the same |
US20090218640A1 (en) * | 2008-02-29 | 2009-09-03 | Roland Hampp | Self Aligned Silicided Contacts |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104979400A (zh) * | 2014-04-07 | 2015-10-14 | 万国半导体股份有限公司 | 使用硅化物源极和本体接触区的封闭式晶胞横向mosfet |
Also Published As
Publication number | Publication date |
---|---|
TW201203384A (en) | 2012-01-16 |
DE112011100421T5 (de) | 2012-11-22 |
US20110248321A1 (en) | 2011-10-13 |
US20120280322A1 (en) | 2012-11-08 |
WO2011126682A1 (en) | 2011-10-13 |
DE112011100421B4 (de) | 2013-09-05 |
US8901626B2 (en) | 2014-12-02 |
JP5764198B2 (ja) | 2015-08-12 |
GB2492514C (en) | 2014-06-18 |
GB2492514B (en) | 2014-06-11 |
JP2013524529A (ja) | 2013-06-17 |
TWI527124B (zh) | 2016-03-21 |
GB201219007D0 (en) | 2012-12-05 |
GB2492514A (en) | 2013-01-02 |
TW201545241A (zh) | 2015-12-01 |
CN102822976B (zh) | 2016-09-07 |
US8367508B2 (en) | 2013-02-05 |
TWI538064B (zh) | 2016-06-11 |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20170118 Address after: Grand Cayman, Cayman Islands Patentee after: INTERNATIONAL BUSINESS MACHINES Corp. Address before: American New York Patentee before: Globalfoundries second U.S. Semiconductor Co.,Ltd. Effective date of registration: 20170118 Address after: American New York Patentee after: Globalfoundries second U.S. Semiconductor Co.,Ltd. Address before: American New York Patentee before: International Business Machines Corp. |
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Effective date of registration: 20180328 Address after: Ontario, Canada Patentee after: International Business Machines Corp. Address before: Grand Cayman, Cayman Islands Patentee before: INTERNATIONAL BUSINESS MACHINES Corp. |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
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Granted publication date: 20160907 Termination date: 20210315 |