CN102812543B - 导电连接部件和导电连接部件的制作方法 - Google Patents

导电连接部件和导电连接部件的制作方法 Download PDF

Info

Publication number
CN102812543B
CN102812543B CN201180014602.7A CN201180014602A CN102812543B CN 102812543 B CN102812543 B CN 102812543B CN 201180014602 A CN201180014602 A CN 201180014602A CN 102812543 B CN102812543 B CN 102812543B
Authority
CN
China
Prior art keywords
organic solvent
connecting element
conductive connecting
volume
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201180014602.7A
Other languages
English (en)
Other versions
CN102812543A (zh
Inventor
西久保英郎
增森俊二
原田琢也
石井智纮
藤原英道
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Publication of CN102812543A publication Critical patent/CN102812543A/zh
Application granted granted Critical
Publication of CN102812543B publication Critical patent/CN102812543B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492—Bases or plates or solder therefor
    • H01L23/4924—Bases or plates or solder therefor characterised by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/64—Manufacture or treatment of solid state devices other than semiconductor devices, or of parts thereof, not peculiar to a single device provided for in groups H01L31/00 - H10K99/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04026—Bonding areas specifically adapted for layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05166—Titanium [Ti] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05644—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
    • H01L2224/1131—Manufacturing methods by local deposition of the material of the bump connector in liquid form
    • H01L2224/1132—Screen printing, i.e. using a stencil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
    • H01L2224/1133—Manufacturing methods by local deposition of the material of the bump connector in solid form
    • H01L2224/1134—Stud bumping, i.e. using a wire-bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/1147—Manufacturing methods using a lift-off mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13075—Plural core members
    • H01L2224/1308—Plural core members being stacked
    • H01L2224/13082—Two-layer arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/13199—Material of the matrix
    • H01L2224/13294—Material of the matrix with a principal constituent of the material being a liquid not provided for in groups H01L2224/132 - H01L2224/13291
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/13298—Fillers
    • H01L2224/13299—Base material
    • H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13305—Gallium [Ga] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/13298—Fillers
    • H01L2224/13299—Base material
    • H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13309—Indium [In] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/13298—Fillers
    • H01L2224/13299—Base material
    • H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13311—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/13298—Fillers
    • H01L2224/13299—Base material
    • H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13313—Bismuth [Bi] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/13298—Fillers
    • H01L2224/13299—Base material
    • H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13316—Lead [Pb] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/13298—Fillers
    • H01L2224/13299—Base material
    • H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13317—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/13298—Fillers
    • H01L2224/13299—Base material
    • H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13317—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/13318—Zinc [Zn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/13298—Fillers
    • H01L2224/13299—Base material
    • H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13317—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/1332—Antimony [Sb] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/13298—Fillers
    • H01L2224/13299—Base material
    • H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13317—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/13323—Magnesium [Mg] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/13298—Fillers
    • H01L2224/13299—Base material
    • H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13317—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/13324—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/13298—Fillers
    • H01L2224/13299—Base material
    • H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13339—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/13298—Fillers
    • H01L2224/13299—Base material
    • H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13344—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/13298—Fillers
    • H01L2224/13299—Base material
    • H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13347—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/13298—Fillers
    • H01L2224/13299—Base material
    • H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13349—Manganese [Mn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/13298—Fillers
    • H01L2224/13299—Base material
    • H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13355—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/13298—Fillers
    • H01L2224/13299—Base material
    • H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13357—Cobalt [Co] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/13298—Fillers
    • H01L2224/13299—Base material
    • H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13363—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/13364—Palladium [Pd] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/13298—Fillers
    • H01L2224/13299—Base material
    • H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13363—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/13366—Titanium [Ti] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/13298—Fillers
    • H01L2224/13299—Base material
    • H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13363—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/13369—Platinum [Pt] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/1601—Structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/273—Manufacturing methods by local deposition of the material of the layer connector
    • H01L2224/2731—Manufacturing methods by local deposition of the material of the layer connector in liquid form
    • H01L2224/2732—Screen printing, i.e. using a stencil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/2747—Manufacturing methods using a lift-off mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/29294—Material of the matrix with a principal constituent of the material being a liquid not provided for in groups H01L2224/292 - H01L2224/29291
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29305—Gallium [Ga] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29309—Indium [In] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29311—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29313—Bismuth [Bi] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29316—Lead [Pb] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29317—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29317—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/29318—Zinc [Zn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29317—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/2932—Antimony [Sb] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29317—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/29323—Magnesium [Mg] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29317—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/29324—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29344—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29347—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29349—Manganese [Mn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29355—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29357—Cobalt [Co] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29363—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/29364—Palladium [Pd] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29363—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/29366—Titanium [Ti] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29363—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/29369—Platinum [Pt] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/3201—Structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/32227—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the layer connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81053—Bonding environment
    • H01L2224/81054—Composition of the atmosphere
    • H01L2224/81075—Composition of the atmosphere being inert
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8112—Aligning
    • H01L2224/81121—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors
    • H01L2224/81122—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors by detecting inherent features of, or outside, the semiconductor or solid-state body
    • H01L2224/81125—Bonding areas on the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8112—Aligning
    • H01L2224/81121—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors
    • H01L2224/81122—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors by detecting inherent features of, or outside, the semiconductor or solid-state body
    • H01L2224/81127—Bonding areas outside the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
    • H01L2224/81191—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
    • H01L2224/81192—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
    • H01L2224/81193—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/812—Applying energy for connecting
    • H01L2224/81201—Compression bonding
    • H01L2224/81203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/81399—Material
    • H01L2224/814—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/81438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/81447—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/8184—Sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83053—Bonding environment
    • H01L2224/83054—Composition of the atmosphere
    • H01L2224/83075—Composition of the atmosphere being inert
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8312—Aligning
    • H01L2224/83121—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors
    • H01L2224/83122—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors by detecting inherent features of, or outside, the semiconductor or solid-state body
    • H01L2224/83125—Bonding areas on the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8312—Aligning
    • H01L2224/83121—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors
    • H01L2224/83122—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors by detecting inherent features of, or outside, the semiconductor or solid-state body
    • H01L2224/83127—Bonding areas outside the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/83201—Compression bonding
    • H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83399—Material
    • H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/83438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/83447—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8384—Sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01009—Fluorine [F]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01012—Magnesium [Mg]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01021—Scandium [Sc]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01022—Titanium [Ti]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01025—Manganese [Mn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0103—Zinc [Zn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01032—Germanium [Ge]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01051—Antimony [Sb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/03—Metal processing
    • H05K2203/0338—Transferring metal or conductive material other than a circuit pattern, e.g. bump, solder, printed component

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Conductive Materials (AREA)
  • Wire Bonding (AREA)

Abstract

本发明提供由热循环特性优异的金属多孔质体构成的导电性凸块、导电性芯片焊接部等导电连接部件。所述导电连接部件在半导体元件的电极端子或电路基板的电极端子的接合面形成，其特征在于，该导电连接部件是对包含平均一次粒径为10nm～500nm的金属微粒(P)和有机溶剂(S)或者由有机溶剂(S)与有机粘结剂(R)构成的有机分散介质(D)的导电性糊料进行加热处理而使金属微粒彼此结合所形成的金属多孔质体，该金属多孔质体的空隙率为5体积%～35体积%，构成该金属多孔质体的金属微粒的平均粒径为10nm～500nm的范围，且存在于该金属微粒间的平均空穴直径为1nm～200nm的范围。

Description

导电连接部件和导电连接部件的制作方法
技术领域
本发明涉及在半导体元件的电极端子或电路基板的电极端子的接合面形成的导电连接部件及其制作方法。详细地说，涉及一种由金属多孔质体构成的导电性凸块、导电性芯片焊接部等导电连接部件及其制作方法，所述金属多孔质体通过对放置于半导体元件的电极端子或电路基板的电极端子的接合面的、含有平均一次粒径为纳米尺寸(纳米尺寸是指小于1μm，以下相同)由铜形成的金属微粒和有机分散介质的导电性糊料进行加热处理而制作，金属多孔质体中，纳米尺寸的金属微粒结合，在该金属微粒间分布有纳米尺寸的空穴(空隙)。
背景技术
近年来，为了实现电子设备的高功能、高性能化和小型化，半导体安装技术的高密度化得以推进。作为半导体元件间的连接、半导体元件与电路基板间的连接方法的代表性技术，已知引线接合技术(WB)、作为无引线接合技术的卷带式自动接合技术(TAB)和倒装芯片焊接技术(FCB)。这些之中，作为高密度地安装计算机设备等半导体装置的技术，多使用能够最高密度化的倒装芯片焊接技术。
倒装芯片焊接将形成于半导体元件等上的凸块(突起状物)接合到电路基板等，该凸块的形成主要采用了镀覆法。
在利用镀覆法形成凸块时，能够形成微细的图案，虽然尝试了通过条件设定来控制凸块高度，但存在无法避免凸块的高度多少产生偏差的问题。为了防止电极的接触不良，作为针对这样的凸块高度的偏差的对策，还可以采用通过接合时的加压单元而使全部凸块密合的方法，但若过度加压则凸块内部有可能残存变形、或者耐热应力有可能降低从而导致破损。因此，优选形成具有在加压时容易使金属制的微细图案连接用凸块的结构变形的柔软性和弹性的结构。另外，利用镀覆法形成的凸块存在据认为是在使用过程中因疲劳破坏而引起的裂纹的发生、断裂的问题。
在倒装芯片焊接中，若半导体元件的构成材料与安装到半导体元件的电路配线基板之间的构成材料不同，则因热膨胀系数的不同而使焊料凸点电极产生应力变形。该应力变形会破坏焊料凸点电极，使可靠性寿命降低。
专利文献1公开了一种用于电连接基板上的导体配线电路和其他基板或者部件的连接用凸块，其通过使用感光性树脂等在基板上设置开口部、并在该开口部内填充平均粒径为0.1μm～50μm的金属微粒后烧制而形成。
专利文献2公开了一种纳米多孔性焊料，其通过将使用了纳米颗粒的纳米焊料前体和发泡剂混合并放置于模具中，使发泡焊料前体膨胀而形成。
专利文献3公开了一种凸块，其由平均粒径为0.005μm～1.0μm的金粉、银粉或钯粉形成的金属粉与有机溶剂构成，通过将不含玻璃粉的金属糊料在200℃～400℃烧结而得到。专利文献3还公开了以下内容：若使用这样不含玻璃粉的金属糊料，则能够在半导体晶片上形成比较柔软且具有弹性的烧结体。
另外，专利文献4公开了一种凸块，其在设置于基板上的光致抗蚀剂层的微孔内设置了镀金层(第1凸块层、高度：10μm)，在其上滴加金糊料作为金属糊料，填充后进行烧结，制成烧结体(第2凸块层)。
现有技术文献
专利文献
专利文献1：日本特开2003-174055号公报
专利文献2：日本特表2009-515711号公报
专利文献3：日本特开2005-216508号公报
专利文献4：日本特开2009-302511号公报
发明内容
发明所要解决的课题
上述专利文献1、2具体公开的多孔质体为在微米尺寸(指1μm以上且小于1000μm，以下相同)的金属颗粒的结合体之间存在微米尺寸的空穴的结构。根据金属材料中的裂纹的传播理论，空穴被认为是龟裂，已知空穴尺寸足够小时，即使施加较大的应力，空穴(裂纹)也不扩大(参照日本材料学会编、疲劳设计便览、1995年1月20日、养贤堂发行、148页～195页)。这种情况下，推测例如具有纳米尺寸的空穴的凸块与具有微米尺寸的空穴的凸块相比，具有约100倍左右的耐应力性。
上述专利文献3公开了一种由使用了平均粒径为0.005μm～1.0μm的金属粉的金属糊料形成凸块的方法。该凸块的形成方法包括以下工序：在被覆半导体晶片的表面的抗蚀剂中形成贯通孔，向该贯通孔填充金属糊料，在将该糊料干燥后从半导体晶片表面去除抗蚀剂，其后对由金属粉构成的凸状物进行烧结，形成凸块。但是，关于该金属糊料中提高金属颗粒的分散性的有机溶剂的使用、以及由所形成的多孔质体构成的凸块的空隙率和空穴尺寸，没有任何公开，也没有记载导电性凸块的热循环特性提高的内容。
为了能够补偿凸块高度的偏差，上述专利文献4所公开的凸块形成了由第1凸块层和第2凸块层构成的2层结构，所述第1凸块层由形成于基板上的导电性金属的块体构成，所述第2凸块层由位于第1凸块层上的第2导电性金属粉末的烧结体构成。
该凸块中，将块状金属作为凸块的主要部，配置于由烧结体构成的具有弹性的凸块前端部，其刚性用第1凸块层担保，抑制倒装芯片接合时凸块在横向上的变形并维持间距，同时用第2凸块层的弹性来追随凸块高度的偏差，由于能够变形而能够以低压实现平坦度良好的接合。这种情况下，对于基板，在抗蚀剂膜中设置开口，在该开口部内设置镀金层等，进而涂布金属糊料后进行干燥、烧制而形成凸块，因此工序繁杂，而且与专利文献3同样地，在该工序中并未公开关于使金属糊料中的金属颗粒的分散性良好的有机溶剂的使用、以及由所形成的多孔质体构成的凸块的空隙率和空穴尺寸的任何内容，也没有记载导电性凸块的热循环特性提高的内容。
另外，若半导体元件与插入器等的连接结构部即芯片焊接部的粘接性低，则半导体元件的背面或插入器连接端子与导电性芯片焊接部的粘接界面有时会因机械应力(外部应力、内部应力)或物理应力(热应力)而部分剥离或者完全剥离。
由于要求实现高性能器件，能够高温操作的器件的开发特别活跃。因此，希望开发所要确保的热循环的温度范围扩大、且耐热循环特性优异的接合部。另外，伴随着半导体元件的高密度化，电极端子的间距和面积变小，与之相伴，关于在安装基板上对半导体元件进行倒装芯片安装时使用的导电性凸块，也希望形成可发挥金属多孔质体的柔软性、弹性、延性且耐热循环优异的导电性凸块、导电性芯片焊接部等导电连接部件。
用于解决课题的方案
鉴于上述现有技术的问题，本发明人发现：在由金属多孔质体构成的导电性凸块、导电性芯片焊接部等导电连接部件中，若空隙率为6体积％～9体积％、且由形成导电连接部件的纳米尺寸的铜、铜合金等所构成的金属微粒所形成的金属多孔质体的平均空穴直径为15nm～120nm，则热循环特性优异，由此完成了本发明。
即，本发明的要点在于以下的(1)～(13)中记载的方案。
(1)一种导电连接部件(下文中有时称为“第1方式”)，其是在半导体元件的电极端子或电路基板的电极端子的接合面形成的导电连接部件，其特征在于，
该导电连接部件是对包含由铜形成且平均一次粒径为10nm～500nm的金属微粒P和由含有有机溶剂SC的有机溶剂S构成的有机分散介质D的导电性糊料、或者包含所述金属微粒P和由含有所述有机溶剂SC的有机溶剂S与有机粘结剂R构成的有机分散介质D的导电性糊料进行加热处理而使金属微粒P彼此结合所形成的金属多孔质体，所述有机溶剂SC常压下的沸点为100℃以上、且由分子中具有1个或2个以上羟基的醇和/或多元醇构成，
该金属多孔质体通过平均粒径为10nm～500nm的金属微粒P彼此结合而形成，空隙率为6体积％～9体积％、平均空穴直径为15nm～120nm的范围。
(2)如上述(1)所述的导电连接部件，其特征在于，所述导电连接部件为用于连接半导体元件间的导电性凸块。
(3)如上述(1)所述的导电连接部件，其特征在于，所述导电连接部件为用于连接半导体元件与导电性基板间的导电性芯片焊接部。
(4)一种导电连接部件的制作方法(下文中有时称为“第2方式”)，其特征在于，其包括以下工序：
工序1：在电子部件的半导体元件或者电路基板的电极端子或导电性基板的接合面上放置包含由铜形成且平均一次粒径为10nm～500nm的金属微粒P和由有机溶剂S构成的有机分散介质D的导电性糊料、或者包含所述金属微粒P和由有机溶剂S与有机粘结剂R构成的有机分散介质D的导电性糊料，形成导电连接部件前体，该有机溶剂S为以下(i)或(ii)：
(i)有机溶剂S1，至少包含5体积％～90体积％的具有酰胺基的有机溶剂SA、5体积％～45体积％的常压下的沸点为20℃～100℃的低沸点的有机溶剂SB、以及5体积％～90体积％的常压下的沸点为100℃以上且由分子中具有1个或2个以上羟基的醇和/或多元醇构成的有机溶剂SC，
(ii)有机溶剂S2，至少包含5体积％～95体积％的具有酰胺基的有机溶剂SA和5体积％～95体积％的常压下的沸点为100℃以上且由分子中具有1个或2个以上羟基的醇和/或多元醇构成的有机溶剂SC；
工序2：在该导电连接部件前体上对所连接的另一个电极端子或导电性基板的接合面进行位置对准；和
工序3：以150℃～350℃的温度对该两电极端子和导电连接部件前体、或者对电极端子及导电性基板和导电连接部件前体进行加热处理，形成由平均粒径为10nm～500nm的金属微粒P彼此结合而形成的、空隙率为6体积％～9体积％、平均空穴直径为15nm～120nm的范围的金属多孔质体构成的导电连接部件，从而将所述接合面间接合。
(5)如上述(4)所述的导电连接部件的制作方法，其特征在于，所述工序1中，导电性糊料中的金属微粒P与有机分散介质D的混配比例(P/D)为50质量％～85质量％/50质量％～15质量％，该有机分散介质D中的有机溶剂S与有机粘结剂R的混配比例(S/R)为80质量％～100质量％/20质量％～0质量％(质量％的合计均为100质量％)。
(6)如上述(4)或(5)所述的导电连接部件的制作方法，其特征在于，所述工序1中，金属微粒P由铜微粒P1构成，或者由90质量％～100质量％的铜微粒P1和10质量％～0质量％的选自镁、铝、锌、镓、铟、锡、锑、铅、铋、钛、锰和锗中的1种或2种以上的金属微粒P2构成(质量％的合计为100质量％)。
(7)如上述(6)所述的导电连接部件的制作方法，其特征在于，所述金属微粒P2在金属微粒P中与铜微粒P1形成了合金，或者在铜微粒P1的表面形成了被覆层。
(8)如上述(4)～(7)中任一项所述的导电连接部件的制作方法，其特征在于，所述有机溶剂SC为选自乙二醇、二乙二醇、1,2-丙二醇、1,3-丙二醇、1,2-丁二醇、1,3-丁二醇、1,4-丁二醇、2-丁烯-1,4-二醇、2,3-丁二醇、戊二醇、己二醇、辛二醇、甘油、1,1,1-三羟基甲基乙烷、2-乙基-2-羟基甲基-1,3-丙二醇、1,2,6-己三醇、1,2,3-己三醇、1,2,4-丁三醇、苏糖醇、赤藓糖醇、季戊四醇、戊五醇和己糖醇中的1种或2种以上。
(9)如上述(4)～(7)中任一项所述的导电连接部件的制作方法，其特征在于，所述有机溶剂SA为选自N-甲基乙酰胺、N-甲基甲酰胺、N-甲基丙酰胺、甲酰胺、N,N-二甲基乙酰胺、1,3-二甲基-2-咪唑啉酮、N,N-二甲基甲酰胺、1-甲基-2-吡咯烷酮、六甲基磷酰三胺、2-吡咯烷酮、ε-己内酰胺和乙酰胺中的1种或2种以上。
(10)如上述(4)～(7)中任一项所述的导电连接部件的制作方法，其特征在于，所述有机溶剂SB为选自通式R1-O-R2(R1、R2各自独立地为烷基，碳原子数为1～4)表示的醚系化合物SB1、通式R3-OH(R3为烷基，碳原子数为1～4)表示的醇SB2、通式R4-C(＝O)-R5(R4、R5各自独立地为烷基，碳原子数为1～2)表示的酮系化合物SB3和通式R6-(N-R7)-R8(R6、R7、R8各自独立地为烷基或氢原子，碳原子数为0～2)表示的胺系化合物SB4中的1种或2种以上。
(11)如上述(4)～(10)中任一项所述的导电连接部件的制作方法，其特征在于，所述有机溶剂SB为：
选自二乙醚、甲基丙基醚、二丙醚、二异丙醚、甲基叔丁基醚、叔戊基甲基醚、二乙烯基醚、乙基乙烯基醚和烯丙基醚中的1种或2种以上的醚系化合物SB1；
选自甲醇、乙醇、1-丙醇、2-丙醇、2-丁醇和2-甲基2-丙醇中的1种或2种以上的醇SB2；
选自丙酮、甲基乙基酮和二乙基酮中的1种或2种以上的酮系化合物SB3；和/或
作为三乙胺和/或二乙胺的胺系化合物SB4。
(12)如上述(4)～(11)中任一项所述的导电连接部件的制作方法，其特征在于，所述有机粘结剂R为选自纤维素树脂系粘结剂、乙酸酯树脂系粘结剂、丙烯酸类树脂系粘结剂、氨基甲酸酯树脂系粘结剂、聚乙烯吡咯烷酮树脂系粘结剂、聚酰胺树脂系粘结剂、丁缩醛树脂系粘结剂和萜烯系粘结剂中的1种或2种以上。
(13)如上述(12)所述的导电连接部件的制作方法，其特征在于，所述纤维素树脂系粘结剂为选自乙酰纤维素、甲基纤维素、乙基纤维素、丁基纤维素和硝酸纤维素中的1种或2种以上；乙酸酯树脂系粘结剂为选自乙二醇甲醚乙酸酯、乙二醇乙醚乙酸酯、乙二醇丁醚乙酸酯、二乙二醇乙醚乙酸酯和二乙二醇丁醚乙酸酯中的1种或2种以上；丙烯酸类树脂系粘结剂为选自甲基丙烯酸甲酯、甲基丙烯酸乙酯和甲基丙烯酸丁酯中的1种或2种以上；氨基甲酸酯树脂系粘结剂为选自2,4-甲苯二异氰酸酯和对苯二异氰酸酯中的1种或2种以上；聚乙烯吡咯烷酮树脂系粘结剂为选自聚乙烯吡咯烷酮和N-乙烯基吡咯烷酮中的1种或2种以上；聚酰胺树脂系粘结剂为选自聚酰胺6、聚酰胺66和聚酰胺11中的1种或2种以上；丁缩醛树脂系粘结剂为聚乙烯醇缩丁醛；萜烯系粘结剂为选自蒎烯、桉树脑、苧烯和萜品醇中的1种或2种以上。
发明效果
(i)上述(1)中记载的第1方式的“导电连接部件”由平均粒径为10nm～500nm的金属微粒P(金属微粒P由铜形成)彼此结合所形成的、空隙率为6体积％～9体积％、平均空穴直径为15nm～120nm的范围的金属多孔质体构成，因此，与由镀覆法形成的凸块等对比，弹性和柔软性得到提高，热循环特性优异，因而具有优异的抗裂性。
(ii)上述(4)中记载的第2方式的“导电连接部件的制作方法”中使用了包含由铜形成且平均一次粒径为10nm～500nm的金属微粒P和由有机溶剂S构成的有机分散介质D的导电性糊料、或者包含该金属微粒P和由有机溶剂S与有机粘结剂R构成的有机分散介质D的导电性糊料，因此能够得到由平均粒径为10nm～500nm的金属微粒P彼此结合所形成的、空隙率为6体积％～9体积％、平均空穴直径为15nm～120nm的范围的金属多孔质体构成的导电连接部件。如上述第1方式中记载的那样，该导电连接部件的热循环特性优异，因而具有优异的抗裂性。
具体实施方式
以下，对〔1〕第1方式的“导电连接部件”和〔2〕第2方式的“导电连接部件的制作方法”进行说明。
〔1〕第1方式的“导电连接部件”
本发明的第1方式的“导电连接部件”是在半导体元件的电极端子或电路基板的电极端子的接合面形成的导电连接部件，其特征在于，
该导电连接部件是对包含由铜形成且平均一次粒径为10nm～500nm的金属微粒P和由含有有机溶剂SC的有机溶剂S构成的有机分散介质D的导电性糊料、或者包含所述金属微粒P和由含有所述有机溶剂SC的有机溶剂S与有机粘结剂R构成的有机分散介质D的导电性糊料进行加热处理而使金属微粒P彼此结合所形成的金属多孔质体，所述有机溶剂SC常压下的沸点为100℃以上、且由分子中具有1个或2个以上羟基的醇和/或多元醇构成，
该金属多孔质体通过平均粒径为10nm～500nm的金属微粒P彼此结合而形成，空隙率为6体积％～9体积％、平均空穴直径为15nm～120nm的范围。
作为第1方式的导电连接部件，可以举出导电性凸块、导电性芯片焊接部等。导电性凸块例如为用于连接半导体元件间的导电连接部件，导电性芯片焊接部通常为配置于导电性基板上且用于连接半导体元件的导电连接部件。
需要说明的是，还可以在电子部件的电极端子面上设置双头螺栓状的导电性的连接部件，通过该导电性的连接部件进一步形成本发明的导电连接部件，与电极图案电连接。
(1)对导电性糊料进行加热处理而形成的金属多孔质体
本发明的第1方式的“导电连接部件”为在半导体元件的电极端子或电路基板的电极端子的接合面形成的导电连接部件，该导电连接部件是对包含由铜形成且平均一次粒径为10nm～500nm的金属微粒P和由含有有机溶剂SC的有机溶剂S构成的有机分散介质D的导电性糊料、或者包含所述金属微粒P和由含有所述有机溶剂SC的有机溶剂S与有机粘结剂R构成的有机分散介质D的导电性糊料进行加热处理而使金属微粒P彼此结合所形成的金属多孔质体，所述有机溶剂SC记载于第2方式，其常压下的沸点为100℃以上、且由分子中具有1个或2个以上羟基的醇和/或多元醇构成。
关于对该导电性糊料进行加热处理而使金属微粒P彼此结合的金属多孔质体的形成方法，将在第2方式中进行说明。
(2)对导电性糊料进行加热处理而得到的金属多孔质体
在第1方式的“导电连接部件”中，对包含由铜形成且平均粒径为10nm～500nm的范围的金属微粒P和有机分散介质D的导电性糊料进行加热处理而得到的金属多孔质体是通过金属微粒P彼此在其颗粒表面结合而形成的，因此，根据金属微粒P的粒径和烧制的程度，也会有加热处理前(烧结前)的金属微粒P的颗粒形状基本上得到维持的情况，但颗粒形状严重变化的情况也多。
需要说明的是，加热处理前的金属微粒P的平均粒径小于10nm时，有可能难以通过加热处理(烧结)而在多孔质体整体上形成均质的粒径和空穴，反而有时热循环特性会降低，抗裂性也降低。另一方面，若该平均粒径超过500nm，则构成金属多孔质体的金属微粒和空穴直径接近微米尺寸，如上述那样热循环特性降低。
加热处理前的金属微粒P的平均粒径可以通过扫描型电子显微镜(SEM)来测定其直径。例如，在二维形状为大致圆形的情况下，测定该圆的直径；在为大致椭圆形的情况下，测定该椭圆的短径；在为大致正方形的情况下，测定该正方形的边长；在为大致长方形的情况下，测定该长方形的短边的长度。关于“平均粒径”，利用上述显微镜对随机选择10个～20个的多个颗粒的粒径进行观察并测量，计算出其平均值，由此求出。
作为构成金属多孔质体的金属微粒P，若考虑导电性、加热处理时的烧结性，可以使用：(i)铜微粒P1；或者(ii)由90质量％～100质量％的铜微粒P1和10质量％～0质量％的选自镁、铝、锌、镓、铟、锡、锑、铅、铋、钛、锰和锗中的1种或2种以上的金属微粒P2构成的金属微粒。
关于金属微粒P的制造的具体例以及金属微粒P中金属微粒P2的结合状态等的具体例，与后述的第2方式中记载的内容相同。
(3)存在于金属微粒P间的平均空穴直径
本发明的导电连接部件中，金属多孔质体的空穴的平均空穴直径为15nm～120nm的范围。本发明的导电连接部件是对包含平均一次粒径为10nm～500nm的金属微粒P的导电性糊料进行加热处理(烧结)而得到的，因而会得到上述平均空穴直径的导电连接部件。需要说明的是，若平均空穴直径为上述范围的上限以下，则热循环特性进一步提高，能够得到优异的抗裂性。若平均空穴直径小于上述范围的下限，则有可能难以形成均质的金属多孔质体。
该空穴的形状可以为圆形、椭圆形、正方形、长方形、六边形等任意的形状。在此，“平均空穴直径”为针对空穴的开口形状的最大内切圆的直径，例如，空穴形状为大致圆形的情况下，指该圆的直径；为大致椭圆形的情况下，指该椭圆的短径；为大致正方形的情况下，指该正方形的边长；为大致长方形的情况下，指该长方形的短边的长度。另外，“平均空穴直径”是使用扫描型电子显微镜(SEM)对随机选择的10个～20个空穴直径的截面形状进行观察并测量所得到的平均值。
(4)金属多孔质体的空隙率
本发明的导电连接部件中的金属多孔质体的空隙率为6体积％～9体积％。
空隙率小于上述范围的下限时，具有近似于构成导电连接部件的块状态的金属的倾向，弹性、柔软性降低，因此耐循环特性有可能降低，抗裂性也有可能降低。另一方面，若空隙率超过上述范围的上限，则机械强度降低，同时金属微粒P彼此的接触变得不充分，导电性有可能降低。空隙率的调整可以通过导电性糊料的金属微粒P与有机分散介质D的混配比例等进行。空隙率的测定可以使用透射型电子显微镜(TEM)、扫描型电子显微镜(SEM)等进行。用电子显微镜测定的情况下，可以拍摄电子显微镜照片，利用其截面图像的分析来确定。另外，空穴尺寸小于100nm时的空隙率可以如下测定：通过超微切片机法或离子铣法等进行薄片化，由此利用透射型电子显微镜观察并测定。
(5)导电连接部件
第1方式的导电连接部件是对金属微粒P适度进行加热处理(烧结)而得到的。在通过对金属微粒P进行烧结而形成的导电连接部件中，虽然也取决于所使用的金属粉的粒度、烧结条件，但形成多孔质、比较柔软且具有弹性的导电连接部件。该柔软的导电连接部件对于在基板上因电极端子间的热膨胀差而在导电连接部件内产生的应力具有良好的耐久性。并且，本发明的导电连接部件的机械特性与块金属(通过镀覆法形成的凸块材料等)相比具有弹性，吸收由膨胀/收缩所产生的变形，抑制了疲劳破坏的发生。
〔2〕第2方式中记载的“导电连接部件的制作方法”
本发明的第2方式的“导电连接部件的制作方法”是制作导电连接部件的方法，其特征在于包括以下工序：
工序1：在电子部件的半导体元件或者电路基板的电极端子或导电性基板的接合面上放置包含由铜形成且平均一次粒径为10nm～500nm的金属微粒P和由有机溶剂S构成的有机分散介质D的导电性糊料、或者包含所述有机溶剂S和由有机溶剂S与有机粘结剂R构成的有机分散介质D的导电性糊料，形成导电连接部件前体，该有机溶剂S为以下(i)或(ii)：
(i)有机溶剂S1，至少包含5体积％～90体积％的具有酰胺基的有机溶剂SA、5体积％～45体积％的常压下的沸点为20℃～100℃的低沸点的有机溶剂SB、以及5体积％～90体积％的常压下的沸点为100℃以上且由分子中具有1个或2个以上羟基的醇和/或多元醇构成的有机溶剂SC，
(ii)有机溶剂S2，至少包含5体积％～95体积％的具有酰胺基的有机溶剂SA和5体积％～95体积％的常压下的沸点为100℃以上且由分子中具有1个或2个以上羟基的醇和/或多元醇构成的有机溶剂SC；
工序2：在该导电连接部件前体上对所连接的另一个电极端子或导电性基板的接合面进行位置对准；和
工序3：以150℃～350℃的温度对该两电极端子和导电连接部件前体、或者对电极端子及导电性基板和导电连接部件前体进行加热处理，形成由平均粒径为10nm～500nm的金属微粒P彼此结合而形成的、空隙率为6体积％～9体积％、平均空穴直径为15nm～120nm的范围的金属多孔质体构成的导电连接部件，从而将所述接合面间接合。
〔2-1〕关于工序1
工序1为下述工序：在电子部件的半导体元件或电路基板的电极端子或者导电性基板的接合面上放置包含由铜形成且平均一次粒径为10nm～500nm的金属微粒P和有有机溶剂S构成的有机分散介质D或者包含所述金属微粒P和由有机溶剂S与有机粘结剂R构成的有机分散介质D的导电性糊料，形成导电连接部件前体，该有机溶剂S为以下(i)或(ii)：
(i)有机溶剂S1，至少包含5体积％～90体积％的具有酰胺基的有机溶剂SA、5体积％～45体积％的常压下的沸点为20℃～100℃的低沸点的有机溶剂SB、以及5体积％～90体积％的常压下的沸点为100℃以上且由分子中具有1个或2个以上羟基的醇和/或多元醇构成的有机溶剂SC，
(ii)有机溶剂S2，至少包含5体积％～95体积％的具有酰胺基的有机溶剂SA和5体积％～95体积％的常压下的沸点为100℃以上且由分子中具有1个或2个以上羟基的醇和/或多元醇构成的有机溶剂SC。
(1)金属微粒P
金属微粒P的平均一次粒径优选为10nm～500nm的范围的理由以及该粒径的测定法与第1方式中记载的内容相同。
作为构成金属多孔质体的金属微粒P，从导电性、加热处理时的烧结性、制造的容易性的方面出发，优选为(i)铜微粒P1；或者(ii)由上述铜微粒P190质量％～100质量％和选自镁、铝、锌、镓、铟、锡、锑、铅、铋、钛、锰和锗中的1种或2种以上的金属微粒P210质量％～0质量％(质量％的合计为100质量％)构成的颗粒。
上述铜微粒P1是导电性相对高的金属，另一方面，金属微粒P2是熔点相对低的金属。在对铜微粒P1合用金属微粒P2时，优选金属微粒P2在金属微粒P中与铜微粒P1形成合金，或者上述金属微粒P2在金属微粒P中于铜微粒P1的表面形成被覆层。
通过合用上述铜微粒P1和金属微粒P2，能够降低加热处理温度，或者能够使金属微粒间的结合更容易。
作为上述铜微粒P1和金属微粒P2的制造方法，没有特别限制，可以使用例如湿式化学还原法、雾化法、镀覆法、等离子体CVD法、MOCVD法等方法。
本发明中，平均一次粒径为10nm～500nm的金属微粒(P1)的制造方法具体可以采用日本特开2008-231564号公报所公开的方法。若采用该公报所公开的制造方法，则能够容易地得到平均一次粒径为10nm～500nm的金属微粒，并且可以在该公报所公开的金属微粒的制造方法中，在金属离子的还原反应终止后向还原反应水溶液中添加凝聚剂并进行离心分离等，在由此回收的除去了反应液中的杂质的金属微粒P中添加有机分散介质D并混炼，由此制造本发明的导电性糊料。
(2)有机分散介质D
本发明中，为了使金属微粒P均匀地分散于导电性糊料中，重要的是选择分散性、加热处理时的烧结性等优异的特定的有机分散介质D。
有机分散介质D使金属微粒P在导电性糊料中分散，调节导电性糊料的粘度以及维持导电性凸块前体、导电性芯片焊接部前体等导电连接部件前体的形状，并且在加热处理时能够以液态和气态发挥作为还原剂的功能。有机分散介质D由有机溶剂S构成或者由有机溶剂S和有机粘结剂R构成。
(2-1)有机溶剂S
有机溶剂S优选为选自以下(i)和(ii)中的1种：
(i)至少包含5体积％～90体积％的具有酰胺基的有机溶剂SA、5体积％～45体积％的常压下的沸点为20℃～100℃的低沸点的有机溶剂SB、以及5体积％～90体积％的常压下的沸点为100℃以上且由分子中具有1个或2个以上羟基的醇和/或多元醇构成的有机溶剂SC的有机溶剂S1；以及
(ii)至少包含5体积％～95体积％的具有酰胺基的有机溶剂SA和5体积％～95体积％的常压下的沸点为100℃以上且由分子中具有1个或2个以上羟基的醇和/或多元醇构成的有机溶剂SC的有机溶剂S2。
在混配上述以外的其他有机溶剂成分时，可以使用四氢呋喃、二乙二醇二甲醚、碳酸亚乙酯、碳酸亚丙酯、环丁砜、二甲基亚砜等极性有机溶剂。
有机溶剂S发挥以下功能：主要使金属微粒P在导电性糊料中均匀分散，调节适度的粘度，以及在对印刷(涂布)而成的导电连接部件前体进行加热处理时调节干燥、烧制速度，并且还可以期待发挥能够使金属微粒P在低于通常的烧结温度的温度下烧结的溶剂调整功能。
(a)有机溶剂S1
有机溶剂S1为至少包含5体积％～90体积％的具有酰胺基的有机溶剂SA、5体积％～45体积％的常压下的沸点为20℃～100℃的低沸点的有机溶剂SB、以及5体积％～90体积％的常压下的沸点为100℃以上且由分子中具有1个或2个以上羟基的醇和/或多元醇构成的有机溶剂SC的有机溶剂。
有机溶剂S1中含有5体积％～90体积％的有机溶剂SA，其具有下述作用：在导电性糊料中提高分散性和保存稳定性，进而在对上述接合面上的导电性糊料进行加热处理而形成金属多孔质体时提高接合面的密合性。有机溶剂S1中含有5体积％～45体积％以上的有机溶剂SB，其具有下述作用：在导电性糊料中降低溶剂分子间的相互作用，提高分散的金属微粒P对于有机溶剂S1的亲和性。
有机溶剂S1中含有5体积％～90体积％以上的有机溶剂SC，其在导电性糊料中能够实现分散性和分散性进一步的长期稳定化。另外，若混合有机溶剂中存在有机溶剂SC，则将该导电性糊料印刷(涂布)到电极端子接合面并加热处理时，金属多孔质体的均匀性得到提高，而且还起到有机溶剂SC所具有的氧化覆膜的还原促进效果，能够得到导电性高的导电连接部件。
所谓“有机溶剂S1为至少包含5体积％～90体积％有机溶剂SA、5体积％～45体积％有机溶剂SB以及5体积％～90体积％有机溶剂SC的有机溶剂。”是指，有机溶剂S1可以由有机溶剂SA、有机溶剂SB以及有机溶剂SC以上述混配比例进行混配以达到100体积％，另外，也可以在上述混配比例的范围内、在不损害本发明的效果的范围内进一步混配其他有机溶剂成分，该情况下，由有机溶剂SA、有机溶剂SB和有机溶剂SC构成的成分优选含有90体积％以上、更优选含有95体积％以上。
(b)有机溶剂S2
有机溶剂S2为至少包含5体积％～95体积％的具有酰胺基的有机溶剂SA和5体积％～95体积％的常压下的沸点为100℃以上且由分子中具有1个或2个以上羟基的醇和/或多元醇构成的有机溶剂SC的有机溶剂。
有机溶剂S2中含有5体积％～95体积％的有机溶剂SA，其具有下述作用：在该混合有机溶剂中提高分散性和保存稳定性，进而在对导电性糊料进行加热处理而形成金属多孔质体时提高接合面的密合性。
有机溶剂S2中含有5体积％～95体积％的有机溶剂SC，其在导电性糊料中进一步提高分散性。并且，若有机溶剂S2中存在有机溶剂SA和有机溶剂SC，则在将导电性糊料印刷(涂布)到半导体元件的电极端子或电路基板的电极端子的接合面上后进行加热处理时，能够以比较低的加热处理温度进行烧结。
所谓“有机溶剂S2为至少包含5体积％～95体积％有机溶剂SA和5体积％～95体积％有机溶剂SC的有机溶剂。”是指，有机溶剂S2可以由有机溶剂SA和有机溶剂SC以上述混配比例进行混配以达到100体积％，另外，也可以在上述混配比例的范围内、在不损害本发明的效果的范围内进一步混配其他有机溶剂成分，该情况下，由有机溶剂SA和有机溶剂SC构成的成分优选含有90体积％以上、更优选含有95体积％以上。
(2-2)关于有机溶剂S的成分
以下示出上述有机溶剂SC、有机溶剂SA和有机溶剂SB的具体例。
(a)有机溶剂SC
有机溶剂SC常压下的沸点为100℃以上，且由分子中具有1个或2个以上羟基的醇和/或多元醇构成，是具有还原性的有机化合物。另外，优选碳原子数为5以上的醇和碳原子数为2以上的多元醇，优选常温下为液态且相对介电常数高的物质，例如碳原子数为10以上的物质。
平均一次粒径为10nm～500nm的金属微粒P的微粒的表面积大，因此需要考虑氧化的影响，以下举出的有机溶剂SC在加热处理(烧结)时以液态和气态发挥作为还原剂的功能，因此在加热处理时抑制金属微粒的氧化，促进烧结。
作为有机溶剂SC的具体例，可以例示乙二醇、二乙二醇、1,2-丙二醇、1,3-丙二醇、1,2-丁二醇、1,3-丁二醇、1,4-丁二醇、2-丁烯-1,4-二醇、2,3-丁二醇、戊二醇、己二醇、辛二醇、甘油、1,1,1-三羟基甲基乙烷、2-乙基-2-羟基甲基-1,3-丙二醇、1,2,6-己三醇、1,2,3-己三醇、1,2,4-丁三醇等。
另外，作为有机溶剂SC的具体例，还可以使用苏糖醇(D-Threitol)、赤藓糖醇(Erythritol)、季戊四醇(Pentaerythritol)、戊五醇(Pentitol)、己糖醇(Hexitol)等糖醇类，戊五醇包含木糖醇(Xylitol)、核醣醇(Ribitol)、阿拉伯糖醇(Arabitol)。上述己糖醇包含甘露醇(Mannitol)、山梨糖醇(Sorbitol)、卫矛醇(Dulcitol)等。此外，还可以使用甘油醛(Glycericaldehyde)、二羟基丙酮(Dioxy-acetone)、苏阿糖(threose)、红藓酮糖(Erythrulose)、红藓糖(Erythrose)、阿拉伯糖(Arabinose)、核糖(Ribose)、核酮糖(Ribulose)、木糖(Xylose)、木酮糖(Xylulose)、来苏糖(Lyxose)、葡萄糖(Glucose)、果糖(Fructose)、甘露糖(Mannose)、艾杜糖(Idose)、山梨糖(Sorbose)、古洛糖(Gulose)、塔洛糖(Talose)、塔格糖(Tagatose)、半乳糖(Galactose)、阿洛糖(Allose)、阿卓糖(Altrose)、乳糖(Lactose)、异麦芽糖(Isomaltose)、葡庚糖(Gluco-heptose)、庚糖(Heptose)、麦芽三糖(Maltotriose)、乳果糖(Lactulose)、海藻糖(Trehalose)等糖类，对于熔点高的物质，可以与其他熔点低的有机溶剂SC混合使用。
上述醇类中，更优选分子中具有2个以上羟基的多元醇，特别优选乙二醇和甘油。
(b)有机溶剂SA
有机溶剂SA为具有酰胺基(-CONH-)的化合物，特别优选相对介电常数高的物质。作为有机溶剂(A)，可以举出N-甲基乙酰胺(191.3于32℃)、N-甲基甲酰胺(182.4于20℃)、N-甲基丙酰胺(172.2于25℃)、甲酰胺(111.0于20℃)、N,N-二甲基乙酰胺(37.78于25℃)、1,3-二甲基-2-咪唑啉酮(37.6于25℃)、N,N-二甲基甲酰胺(36.7于25℃)、1-甲基-2-吡咯烷酮(32.58于25℃)、六甲基磷酰三胺(29.0于20℃)、2-吡咯烷酮、ε-己内酰胺、乙酰胺等，还可以将它们混合后使用。需要说明的是，上述具有酰胺基的化合物名之后的括号中的数字表示各溶剂在测定温度下的相对介电常数。这些之中，可以适宜地使用相对介电常数为100以上的N-甲基乙酰胺、N-甲基甲酰胺、甲酰胺、乙酰胺等。需要说明的是，如N-甲基乙酰胺(熔点：26～28℃)那样在常温下为固体的情况下，可以与其他溶剂混合而在处理温度下以液态形式使用。
(c)有机溶剂SB
有机溶剂SB是常压下的沸点在20℃～100℃的范围的有机化合物。
若常压下的沸点小于20℃，则在常温下保存包含有机溶剂SB的颗粒分散液时，有机溶剂SB的成分挥发，糊料组成有可能变化。另外，常压下的沸点为100℃以下时，可以期待有效地发挥下述效果：通过该溶剂添加而使溶剂分子间的相互引力降低，进一步提高微粒的分散性。
作为有机溶剂SB，可以例示通式R1-O-R2(R1、R2各自独立地为烷基，碳原子数为1～4)表示的醚系化合物SB1、通式R3-OH(R3为烷基，碳原子数为1～4)表示的醇SB2、通式R4-C(＝O)-R5(R4、R5各自独立地为烷基，碳原子数为1～2)表示的酮系化合物SB3和通式R6-(N-R7)-R8(R6、R7、R8各自独立地为烷基或氢原子，碳原子数为0～2)表示的胺系化合物SB4。
以下例示上述有机溶剂SB，化合物名后的括号内的数字表示常压下的沸点。
作为上述醚系化合物SB1，可以例示二乙醚(35℃)、甲基丙基醚(31℃)、二丙醚(89℃)、二异丙醚(68℃)、甲基叔丁基醚(55.3℃)、叔戊基甲基醚(85℃)、二乙烯基醚(28.5℃)、乙基乙烯基醚(36℃)、烯丙基醚(94℃)等。
作为上述醇SB2，可以例示甲醇(64.7℃)、乙醇(78.0℃)、1-丙醇(97.15℃)、2-丙醇(82.4℃)、2-丁醇(100℃)、2-甲基2-丙醇(83℃)等。
作为上述酮系化合物SB3，可以例示丙酮(56.5℃)、甲基乙基酮(79.5℃)、二乙基酮(100℃)等。
另外，作为上述胺系化合物SB4，可以例示三乙胺(89.7℃)、二乙胺(55.5℃)等。
(2-3)有机粘结剂R
有机粘结剂R在导电性糊料中发挥抑制金属微粒P的凝聚、调节导电性糊料的粘度、以及维持导电连接部件前体的形状的功能。
上述有机粘结剂R优选为选自纤维素树脂系粘结剂、乙酸酯树脂系粘结剂、丙烯酸类树脂系粘结剂、氨基甲酸酯树脂系粘结剂、聚乙烯吡咯烷酮树脂系粘结剂、聚酰胺树脂系粘结剂、丁缩醛树脂系粘结剂和萜烯系粘结剂中的1种或2种以上。
具体地说，上述纤维素树脂系粘结剂优选为选自乙酰纤维素、甲基纤维素、乙基纤维素、丁基纤维素和硝酸纤维素中的1种或2种以上；乙酸酯树脂系粘结剂优选为选自乙二醇甲醚乙酸酯、乙二醇乙醚乙酸酯、乙二醇丁醚乙酸酯、二乙二醇乙醚乙酸酯和二乙二醇丁醚乙酸酯中的1种或2种以上；丙烯酸类树脂系粘结剂优选为选自甲基丙烯酸甲酯、甲基丙烯酸乙酯和甲基丙烯酸丁酯中的1种或2种以上；氨基甲酸酯树脂系粘结剂优选为选自2,4-甲苯二异氰酸酯和对苯二异氰酸酯中的1种或2种以上；聚乙烯吡咯烷酮树脂系粘结剂优选为选自聚乙烯吡咯烷酮和N-乙烯基吡咯烷酮中的1种或2种以上；聚酰胺树脂系粘结剂优选为选自聚酰胺6、聚酰胺66和聚酰胺11中的1种或2种以上；丁缩醛树脂系粘结剂优选为聚乙烯醇缩丁醛；萜烯系粘结剂优选为选自蒎烯、桉树脑、苧烯和萜品醇中的1种或2种以上。
(3)导电性糊料
导电性糊料是包含由铜形成且平均一次粒径为10nm～500nm的金属微粒P和由有机溶剂S构成的有机分散介质D的导电性糊料、或者是包含所述金属微粒P和由有机溶剂S与有机粘结剂R构成的有机分散介质D的导电性糊料。
若对其进行加热处理，则在达到某温度时，有机溶剂S的蒸发、或者有机溶剂S的蒸发和有机粘结剂R的热分解进行，金属微粒P的表面显现，利用相互在表面结合(烧结)的原理而作为接合材料发挥功能。
上述导电性糊料中金属微粒P与有机分散介质D的混配比例(P/D)优选为50质量％～85质量％/50质量％～15质量％(质量％的合计为100质量％)。
需要说明的是，在不损害本发明的效果的范围内，本发明的导电性糊料中可以混配其他金属微粒、有机分散介质等。
若金属微粒P的混配比例超过上述85质量％，则糊料为高粘度，在加热处理中金属微粒P表面间的结合不足，导电性有可能降低。另一方面，金属微粒P的混配比例小于上述50质量％时，糊料的粘度降低，难以维持涂布到半导体元件的电极端子或电路基板的电极端子的接合面的导电连接部件前体的形状，而且在加热处理时有可能产生收缩这样的不良情况，此外，在加热处理时有可能伴有有机分散介质D的蒸发速度变慢的不良情况。从这方面考虑，上述金属微粒P与有机分散介质D的混配比例(P/D)更优选为55质量％～80质量％/45质量％～20质量％。另外，该有机分散介质D中有机溶剂S与有机粘结剂R的混配比例(S/R)优选为80质量％～100质量％/20质量％～0质量％(质量％的合计均为100质量％)。
若有机分散介质D中的有机粘结剂R的混配比例超过20质量％，则加热处理导电连接部件前体时有机粘结剂R热分解并飞散的速度变慢，而且若导电连接部件中残留的碳量增加则烧结受到阻碍，有可能发生裂纹、剥离等问题，因而不优选。
通过有机溶剂S的选择，在仅利用该溶剂就能够使金属微粒P均匀分散，调节导电性糊料的粘度并发挥出可维持导电连接部件前体的形状的功能的情况下，可以使用仅由有机溶剂S构成的成分作为有机分散介质D。
导电性糊料中，可以在上述成分中根据需要加入消泡剂、分散剂、增塑剂、表面活性剂、增稠剂等公知的添加物。在制造导电性糊料时，可以在将各成分混合后使用球磨机等进行混炼。
(4)导电连接部件前体的形成
作为将导电性糊料涂布到半导体元件的电极端子等上而形成导电性凸块前体、导电性芯片焊接部前体等导电连接部件前体的手段，没有特别限制，可以举出例如公知的丝网印刷、利用后述的抗蚀剂等形成开口部并在该开口部涂布导电性糊料的方法等。
在使用丝网印刷的情况下，例如在半导体元件的电极端子等上配置设有版膜(抗蚀剂)的筛版，在其上放置导电性糊料并针对该糊料用刮刀进行滑动，则导电性糊料通过不存在抗蚀剂的部分的筛，转移到电极端子等上，形成导电连接部件前体。作为用于填充导电性糊料的开口部的形成方法，包括以下方法：经过曝光/显影工序而在感光性树脂层形成图案的照相平版印刷方法；将激光、电子射线、离子束等高能射线照射到设置于元件上的绝缘树脂层，通过加热所致的熔融或者切断树脂的分子键的切除(ablation)而在该树脂层形成开口部的方法。这些方法之中，从实用性的方面考虑，优选照相平版印刷法、或者利用激光的开口部形成方法。
〔2-2〕关于工序2
本发明的工序2是在上述导电连接部件前体上与所连接的其他电极端子进行位置对准的工序。该与其他电极端子的位置对准为下述工序：例如对形成于半导体元件的电极端子上的多个导电连接部件前体和与该电极端子成对接合的部分进行位置对准，使半导体元件的电极端子和电路基板的电极端子接触能够确保电连接。作为具体例，可以利用光学装置等对半导体元件上的电极和用带卷等搬运来的基板的连接端子部进行位置对准。
〔2-3〕关于工序3
工序3为下述工序：以150℃～350℃的温度对上述导电连接部件前体进行加热处理，形成由平均粒径为10nm～500nm的金属微粒P彼此结合而形成的、空隙率为6体积％～9体积％、平均空穴直径为15nm～120nm的范围的金属多孔质体构成的导电连接部件，从而将上述接合面间接合。
(1)加热处理
对于在半导体元件的电极端子上等之上形成、与相对的端子电极接触的状态的导电连接部件前体，以150℃～350℃的温度加热处理，以电气、机械的方式将与半导体元件的电极端子等相对的端子电极等接合。导电连接部件前体中含有沸点比较低的有机溶剂S作为有机分散介质D时，在加热处理之前可以预先设置干燥工序，将有机溶剂S的至少一部分预先蒸发、除去。
由于使用平均一次粒径为10nm～500nm的颗粒作为金属微粒P，因此若通过加热除去有机分散介质D，则由于其表面的能量而以低于块状态的金属的熔点的温度凝聚，在金属微粒表面间进行结合(烧结)，形成由金属多孔质体构成的导电连接部件。若加热处理时有机溶剂S中含有有机溶剂SC，则该溶剂以液态和气态发挥还原功能，因此金属微粒P的氧化受到抑制，烧结得以促进。
(2)导电连接部件
如此得到的由金属多孔质体构成的导电性凸块、芯片焊接部等导电连接部件中的金属多孔质体的空隙率为6体积％～9体积％、平均空穴直径为15nm～120nm的范围。需要说明的是，导电连接部件中的空隙率、金属微粒的平均粒径以及平均空穴直径的测定方法与第1方式中记载的方法相同。
本发明的导电连接部件是金属微粒P彼此进行表面接触并结合(烧结)而形成的金属多孔质体，因此具有适度的弹性和柔软性，并且也不损害导电性。
实施例
通过实施例具体地说明本发明，但本发明并不被这些实施例所限定。其中，金属微粒的平均粒径的测定、导电连接部件的平均空穴直径、空隙率的测定方法如下所述。
(1)金属微粒的平均粒径的测定方法
对于金属微粒，利用扫描型电子显微镜(SEM)观察随机选择的10个颗粒的截面，测定针对该截面的二维形状的最大内切圆的直径，并求出其平均值。需要说明的是，在电子显微镜的截面照片中，在二维形状为大致圆形的情况下，测定该圆的直径；在为大致椭圆形的情况下，测定该椭圆的短径；在为大致正方形的情况下，测定该正方形的边长；在为大致长方形的情况下，测定该长方形的短边的长度。
(2)平均空穴直径的测定方法
关于“平均空穴直径”，使用扫描型电子显微镜(SEM)对随机选择的10个～20个空穴直径的截面形状进行观察并测量，将其平均值作为平均空穴直径。
(3)空隙率的测定方法
关于空隙率的测定，可以通过透射型电子显微镜(TEM)拍摄电子显微镜照片，利用其截面图像的分析来确定。另外，空穴尺寸小于100nm时的空隙率如下测定：通过超微切片机法进行薄片化，由此利用透射型电子显微镜(TEM)观察并测定。
[实施例1]
由平均一次粒径为150nm的铜微粒和由有机溶剂与有机粘结剂构成的有机分散介质制备导电性糊料，将该导电性糊料涂布到导电性基板上，形成导电性凸块前体，接着，在该前体上放置电子部件的引线后进行加热处理(烧结)，形成导电性凸块接合体。对所得到的导电性凸块接合体进行耐热循环试验。
(1)导电性糊料的制备
如表1所示，将在水溶液中通过由铜离子的无电解还原所制备的平均一次粒径为150nm的铜微粒70质量％、和由作为有机溶剂的由甘油40体积％、N-甲基乙酰胺55体积％和三乙胺5体积％构成的混合溶剂(相当于本发明的有机溶剂S1)95质量％与作为有机粘结剂的乙基纤维素(平均分子量1000,000)5质量％构成的有机分散介质30质量％混炼，制备导电性糊料。
(2)在基板上形成凸块前体和利用该前体的烧结形成导电性凸块接合体
将上述导电性糊料分别以厚度的方式丝网印刷到设置于陶瓷基板上的4个(与1边为4mm的正方形的顶点对应的位置)厚度的衬垫上，形成导电性凸块前体。
在该凸块前体上放置芯片型电子部件的引线后，在惰性气体气氛下于200℃加热20分钟进行烧结，形成由金属多孔质体构成的导电性凸块接合体。
(3)导电性凸块的评价
(i)空穴的观察
将通过凸块连接的电路基板和芯片型电子部件埋入环氧树脂中。接着，与埋入的树脂一起对电子部件/电路基板进行研磨，使凸块部分的截面露出。
通过扫描型电子显微镜对凸块的截面进行观察，结果如表1所示，空隙率为7体积％，平均空穴直径为18nm。
(ii)耐热循环试验
对于通过上述导电性凸块接合了部件的电路基板(导电性凸块接合体)，以下述4个条件依次进行1循环的温度变化并重复1000次，进行基于冷热循环的耐热循环试验。
条件：-55℃下30分钟、25℃下5分钟、125℃下30分钟、25℃下5分钟的顺序
其结果，将冷热循环试验后的连接部的电阻为初期电阻的2倍以上的情况评价为不良，以该评价基准进行评价，结果，即使测定10个样品也没有观察到不良发生数。将导电性糊料的成分和组成以及导电性凸块的评价结果归纳列于表1。
[实施例2]
实施例2中，如表1所示，作为有机溶剂，使用由甘油45体积％和N-甲基乙酰胺55体积％构成的混合溶剂(相当于本发明的有机溶剂S2)，除此以外与实施例1同样地在形成凸块前体后进行加热处理，形成导电性凸块接合体。
接下来，对于实施例2中得到的导电性凸块接合体，与实施例1中记载的内容同样地进行耐热循环试验。将实施例2的导电性糊料的成分和组成以及导电性凸块的评价结果归纳列于表1。
[比较例1]
作为金属微粒，使用平均一次粒径为1.5μm的铜微粒(在水溶液中通过由铜离子的无电解还原所制备的铜微粒)，作为有机溶剂使用甘油，除此以外与实施例1同样地在形成凸块前体后进行加热处理，形成与部件的导电性凸块接合体。
接下来，与实施例1中记载的内容同样地进行耐热循环试验。
比较例1的导电性糊料的成分和组成以及导电性凸块的评价结果归纳列于表1。
[表1]
*：表示10个样品中冷热循环试验后的连接部的电阻为试验前的2倍以上的样品数。
[实施例3]
将与实施例1中使用的铜微粒同样的平均一次粒径为150nm的铜微粒60质量％、和由作为有机溶剂的表2所示的由甘油40体积％、N-甲基乙酰胺55体积％和三乙胺5体积％构成的混合溶剂(相当于本发明的有机溶剂S1)95质量％与作为有机粘结剂的乙基纤维素(平均分子量1000,000)5质量％构成的有机分散介质40质量％混炼，制备导电性糊料，除此以外与实施例1同样地在形成凸块前体后进行加热处理，形成与部件的导电性凸块接合体。
接下来，与实施例1中记载的内容同样地进行耐热循环试验。
实施例3的导电性糊料的成分和组成以及导电性凸块的评价结果归纳列于表2。
[实施例4]
实施例4中，如表2所示，作为有机溶剂，使用由甘油45体积％和N-甲基乙酰胺55体积％构成的混合溶剂(相当于本发明的有机溶剂S2)，除此以外与实施例1同样地在形成凸块前体后进行加热处理，形成导电性凸块接合体。
接下来，对于实施例4中得到的导电性凸块接合体，与实施例1中记载的内容同样地进行耐热循环试验。
实施例4的导电性糊料的成分和组成以及导电性凸块的评价结果归纳列于表2。
[比较例2]
作为金属微粒，使用平均一次粒径为1.5μm的铜微粒(在水溶液中通过由铜离子的无电解还原所制备的铜微粒)，作为有机溶剂使用甘油，除此以外与实施例4同样地在形成凸块前体后进行加热处理，形成导电性凸块接合体。
接下来，与实施例1中记载的内容同样地进行耐热循环试验。
比较例2的导电性糊料的成分和组成以及导电性凸块的评价结果归纳列于表2。
[表2]
*：表示10个样品中冷热循环试验后的连接部的电阻为试验前的2倍以上的样品数。
[实施例5、6]
将平均一次粒径为150nm的铜微粒与有机溶剂以及有机粘结剂以表3所示比例混合，分别制作用于实施例5、6的导电糊料。将该导电性糊料涂布到导电性基板上，形成角状的芯片焊接材料，接着在其上放置电子部件的引线，然后进行加热处理(烧结)而形成接合体。对所得到的接合体进行空隙率、平均空穴直径的测定和耐热循环试验。
(1)导电性糊料的制备
实施例5、6中，将在水溶液中通过由铜离子的无电解还原所制备的平均一次粒径为150nm的铜微粒70质量％、和表3所示的有机溶剂(分别相当于本发明的有机溶剂S1、S2)95质量％与作为有机粘结剂的乙基纤维素(平均分子量1000000)5质量％构成的有机分散介质30质量％混炼，制备导电性糊料。
(2)电子部件的接合
使用铝基板(电气化学工业株式会社制造、商品名：HITTPLATEK-1、在厚1.5mm铝板上形成厚度为0.075mm的绝缘层，进而在该绝缘层上层积有厚度为0.038mm的电路用铜箔)，通过蚀刻以5.5×5.5mm对上述铜箔进行图案化，形成衬垫。使用导电性糊料对金属掩模形成5×5×0.15mm的图案，进而在其上以溅射处理面和加热接合用碎片接触的方式配置4×4×0.35(厚)mm的硅芯片(溅射处理Ti/Au＝35/150nm)。通过倒装芯片键合机从硅芯片的上面施加5MPa的压力，同时以300℃进行10分钟的加热，由此在铝基板上安装硅芯片。
(3)连接部的评价
(i)空穴的观察
将所连接的铝基板和硅芯片埋入环氧树脂中。接着，与埋入的树脂一起对连接体进行研磨，使糊料连接部的截面露出。
通过扫描型电子显微镜对连接部的截面进行观察，空隙率和平均空穴直径的评价结果汇总表示于表3。
(ii)耐热循环试验
对于接合了上述铝基板和硅芯片的部件，以下述4个条件依次进行1循环的温度变化并重复1000次，进行基于冷热循环的耐热循环试验。
条件：-55℃下30分钟、25℃下5分钟、125℃下30分钟、25℃下5分钟的顺序
其结果，冷热循环试验后，在连接部使用超声波显微镜进行了剥离部的有无的观察。超声波显微镜观察中，观察到剥离部的超声波的反射信号高。即使测定10个样品，在连接面整体上也基本上没有连接部位中的超声波反射信号，没有观察到发生了剥离的样品。导电性糊料的成分和组成以及评价结果归纳列于表3。
[比较例3]
作为金属微粒，使用平均一次粒径为1.5μm的铜微粒(在水溶液中通过由铜离子的无电解还原所制备的铜微粒)，作为有机溶剂使用甘油，除此以外与实施例5同样地将该导电性糊料涂布到导电性基板上，形成角状的芯片焊接材料，接着在其上放置电子部件的引线，然后进行加热处理(烧结)而形成接合体。进行所得到的接合体的耐热循环试验。接下来，与实施例1中记载的内容同样地对所得到的接合体进行空隙率、平均空穴直径的测定和耐热循环试验。
比较例3的导电性糊料的成分和组成以及导电性凸块的评价结果归纳列于表3。
[表3]
*：表示10个样品中冷热循环试验后的连接部的电阻为试验前的2倍以上的样品数。

Claims (13)

1.一种导电连接部件，其是在半导体元件的电极端子或电路基板的电极端子的接合面形成的导电连接部件，其特征在于，
该导电连接部件是对包含由铜形成且平均一次粒径为10nm～500nm的金属微粒P和由含有有机溶剂SC的有机溶剂S构成的有机分散介质D的导电性糊料、或者包含所述金属微粒P和由含有所述有机溶剂SC的有机溶剂S与有机粘结剂R构成的有机分散介质D的导电性糊料进行加热处理而使金属微粒P彼此结合所形成的金属多孔质体，所述有机溶剂SC常压下的沸点为100℃以上、且由分子中具有1个或2个以上羟基的醇和/或多元醇构成，
该金属多孔质体通过平均粒径为10nm～500nm的金属微粒P彼此结合而形成，空隙率为6体积％～9体积％、平均空穴直径为15nm～120nm的范围。
2.如权利要求1所述的导电连接部件，其特征在于，所述导电连接部件为用于连接半导体元件间的导电性凸块。
3.如权利要求1所述的导电连接部件，其特征在于，所述导电连接部件为用于连接半导体元件与导电性基板间的导电性芯片焊接部。
4.一种导电连接部件的制作方法，其特征在于，其包括以下工序：
工序1：在电子部件的半导体元件或者电路基板的电极端子或导电性基板的接合面上放置包含由铜形成且平均一次粒径为10nm～500nm的金属微粒P和由有机溶剂S构成的有机分散介质D的导电性糊料、或者包含所述金属微粒P和由有机溶剂S与有机粘结剂R构成的有机分散介质D的导电性糊料，形成导电连接部件前体，该有机溶剂S为以下(i)或(ii)：
(i)有机溶剂S1，至少包含5体积％～90体积％的具有酰胺基的有机溶剂SA、5体积％～45体积％的常压下的沸点为20℃～100℃的低沸点的有机溶剂SB、以及5体积％～90体积％的常压下的沸点为100℃以上且由分子中具有1个或2个以上羟基的醇和/或多元醇构成的有机溶剂SC，
(ii)有机溶剂S2，至少包含5体积％～95体积％的具有酰胺基的有机溶剂SA和5体积％～95体积％的常压下的沸点为100℃以上且由分子中具有1个或2个以上羟基的醇和/或多元醇构成的有机溶剂SC；
工序2：在该导电连接部件前体上对所连接的另一个电极端子或导电性基板的接合面进行位置对准；和
工序3：以150℃～350℃的温度对该两电极端子和导电连接部件前体、或者对电极端子及导电性基板和导电连接部件前体进行加热处理，形成由平均粒径为10nm～500nm的金属微粒P彼此结合而形成的、空隙率为6体积％～9体积％、平均空穴直径为15nm～120nm的范围的金属多孔质体构成的导电连接部件，从而将所述接合面间接合。
5.如权利要求4所述的导电连接部件的制作方法，其特征在于，所述工序1中，导电性糊料中的金属微粒P与有机分散介质D的混配比例P/D为50质量％～85质量％/50质量％～15质量％，该有机分散介质D中的有机溶剂S与有机粘结剂R的混配比例S/R为80质量％～100质量％/20质量％～0质量％，质量％的合计均为100质量％。
6.如权利要求4或5所述的导电连接部件的制作方法，其特征在于，所述工序1中，金属微粒P由铜微粒P1构成，或者由90质量％～100质量％的铜微粒P1和10质量％～0质量％的选自镁、铝、锌、镓、铟、锡、锑、铅、铋、钛、锰和锗中的1种或2种以上的金属微粒P2构成，质量％的合计为100质量％。
7.如权利要求6所述的导电连接部件的制作方法，其特征在于，所述金属微粒P2在金属微粒P中与铜微粒P1形成了合金，或者在铜微粒P1的表面形成了被覆层。
8.如权利要求4、5或7所述的导电连接部件的制作方法，其特征在于，所述有机溶剂SC为选自乙二醇、二乙二醇、1,2-丙二醇、1,3-丙二醇、1,2-丁二醇、1,3-丁二醇、1,4-丁二醇、2-丁烯-1,4-二醇、2,3-丁二醇、戊二醇、己二醇、辛二醇、甘油、1,1,1-三羟基甲基乙烷、2-乙基-2-羟基甲基-1,3-丙二醇、1,2,6-己三醇、1,2,3-己三醇、1,2,4-丁三醇、苏糖醇、赤藓糖醇、季戊四醇、戊五醇和己糖醇中的1种或2种以上。
9.如权利要求4、5或7所述的导电连接部件的制作方法，其特征在于，所述有机溶剂SA为选自N-甲基乙酰胺、N-甲基甲酰胺、N-甲基丙酰胺、甲酰胺、N,N-二甲基乙酰胺、1,3-二甲基-2-咪唑啉酮、N,N-二甲基甲酰胺、1-甲基-2-吡咯烷酮、六甲基磷酰三胺、2-吡咯烷酮、ε-己内酰胺和乙酰胺中的1种或2种以上。
10.如权利要求4、5或7所述的导电连接部件的制作方法，其特征在于，所述有机溶剂SB为选自通式R1-O-R2表示的醚系化合物SB1、通式R3-OH表示的醇SB2、通式R4-C(＝O)-R5表示的酮系化合物SB3和通式R6-(N-R7)-R8表示的胺系化合物SB4中的1种或2种以上，上述通式中，R1、R2各自独立地为烷基，碳原子数为1～4；R3为烷基，碳原子数为1～4；R4、R5各自独立地为烷基，碳原子数为1～2；R6、R7、R8各自独立地为烷基或氢原子，碳原子数为0～2。
11.如权利要求4、5或7所述的导电连接部件的制作方法，其特征在于，所述有机溶剂SB为：
选自二乙醚、甲基丙基醚、二丙醚、二异丙醚、甲基叔丁基醚、叔戊基甲基醚、二乙烯基醚、乙基乙烯基醚和烯丙基醚中的1种或2种以上的醚系化合物SB1；
选自甲醇、乙醇、1-丙醇、2-丙醇、2-丁醇和2-甲基2-丙醇中的1种或2种以上的醇SB2；
选自丙酮、甲基乙基酮和二乙基酮中的1种或2种以上的酮系化合物SB3；和/或
作为三乙胺和/或二乙胺的胺系化合物SB4。
12.如权利要求4、5或7所述的导电连接部件的制作方法，其特征在于，所述有机粘结剂R为选自纤维素树脂系粘结剂、乙酸酯树脂系粘结剂、丙烯酸类树脂系粘结剂、氨基甲酸酯树脂系粘结剂、聚乙烯吡咯烷酮树脂系粘结剂、聚酰胺树脂系粘结剂、丁缩醛树脂系粘结剂和萜烯系粘结剂中的1种或2种以上。
13.如权利要求12所述的导电连接部件的制作方法，其特征在于，所述纤维素树脂系粘结剂为选自乙酰纤维素、甲基纤维素、乙基纤维素、丁基纤维素和硝酸纤维素中的1种或2种以上；乙酸酯树脂系粘结剂为选自乙二醇甲醚乙酸酯、乙二醇乙醚乙酸酯、乙二醇丁醚乙酸酯、二乙二醇乙醚乙酸酯和二乙二醇丁醚乙酸酯中的1种或2种以上；丙烯酸类树脂系粘结剂为选自甲基丙烯酸甲酯、甲基丙烯酸乙酯和甲基丙烯酸丁酯中的1种或2种以上；氨基甲酸酯树脂系粘结剂为选自2,4-甲苯二异氰酸酯和对苯二异氰酸酯中的1种或2种以上；聚乙烯吡咯烷酮树脂系粘结剂为选自聚乙烯吡咯烷酮和N-乙烯基吡咯烷酮中的1种或2种以上；聚酰胺树脂系粘结剂为选自聚酰胺6、聚酰胺66和聚酰胺11中的1种或2种以上；丁缩醛树脂系粘结剂为聚乙烯醇缩丁醛；萜烯系粘结剂为选自蒎烯、桉树脑、苧烯和萜品醇中的1种或2种以上。
CN201180014602.7A 2010-03-19 2011-03-18 导电连接部件和导电连接部件的制作方法 Active CN102812543B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2010-063436 2010-03-19
JPJP2010-063436 2010-03-19
JP2010063436 2010-03-19
PCT/JP2011/001642 WO2011114751A1 (ja) 2010-03-19 2011-03-18 導電接続部材、及び導電接続部材の作製方法

Publications (2)

Publication Number Publication Date
CN102812543A CN102812543A (zh) 2012-12-05
CN102812543B true CN102812543B (zh) 2016-03-30

Family

ID=44648861

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180014602.7A Active CN102812543B (zh) 2010-03-19 2011-03-18 导电连接部件和导电连接部件的制作方法

Country Status (6)

Country Link
US (1) US10177079B2 (zh)
EP (1) EP2560197A4 (zh)
JP (1) JP5158904B2 (zh)
KR (1) KR101755749B1 (zh)
CN (1) CN102812543B (zh)
WO (1) WO2011114751A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108174618A (zh) * 2015-09-30 2018-06-15 日东电工株式会社 加热接合用片材及带有切割带的加热接合用片材
CN109642123A (zh) * 2016-12-21 2019-04-16 古河电气工业株式会社 接合膜及晶圆加工用带

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9735126B2 (en) * 2011-06-07 2017-08-15 Infineon Technologies Ag Solder alloys and arrangements
US9282638B2 (en) * 2012-01-13 2016-03-08 Zycube Co., Ltd. Electrode, electrode material, and electrode formation method
EP2960930A4 (en) * 2013-02-22 2017-07-12 Furukawa Electric Co., Ltd. Connecting structure, and semiconductor device
TWI538754B (zh) * 2013-06-21 2016-06-21 China Steel Corp Modification of silver powder and glass - free sintered silver paste manufacturing method
EP3016135A4 (en) * 2013-06-28 2017-09-20 Furukawa Electric Co., Ltd. Connection structure and semiconductor device
JP6132716B2 (ja) * 2013-09-10 2017-05-24 株式会社東芝 金属粒子ペースト、これを用いた硬化物、および半導体装置
US9682533B1 (en) * 2014-09-09 2017-06-20 Hrl Laboratories, Llc Methods to form electrical-mechanical connections between two surfaces, and systems and compositions suitable for such methods
US20170317048A1 (en) * 2014-11-07 2017-11-02 Nippon Steel & Sumitomo Metal Corporation Conductive bonded assembly of electronic component, semiconductor device using same, and method of production of conductive bonded assembly
US9888584B2 (en) * 2014-12-31 2018-02-06 Invensas Corporation Contact structures with porous networks for solder connections, and methods of fabricating same
JP6948764B2 (ja) * 2015-06-05 2021-10-13 Ｄｏｗａエレクトロニクス株式会社 銀微粒子分散液
JP6155302B2 (ja) * 2015-06-08 2017-06-28 古河電気工業株式会社 接合体
JP6858520B2 (ja) * 2015-09-30 2021-04-14 日東電工株式会社 加熱接合用シート、及び、ダイシングテープ付き加熱接合用シート
WO2017057428A1 (ja) * 2015-09-30 2017-04-06 日東電工株式会社 加熱接合用シート、及び、ダイシングテープ付き加熱接合用シート
WO2017057429A1 (ja) * 2015-09-30 2017-04-06 日東電工株式会社 加熱接合用シート、及び、ダイシングテープ付き加熱接合用シート
EP3154079A1 (de) * 2015-10-08 2017-04-12 Heraeus Deutschland GmbH & Co. KG Verfahren zum verbinden einer substratanordnung mit einem elektronikbauteil mit verwendung eines auf eine kontaktierungsmaterialschicht aufgebrachten vorfixiermittels, entsprechende substratanordnung und verfahren zu ihrem herstellen
US10373868B2 (en) * 2016-01-18 2019-08-06 Infineon Technologies Austria Ag Method of processing a porous conductive structure in connection to an electronic component on a substrate
US9875983B2 (en) * 2016-04-29 2018-01-23 Indium Corporation Nanomicrocrystallite paste for pressureless sintering
CN109477918A (zh) * 2016-08-30 2019-03-15 松下知识产权经营株式会社 颜色转换元件
JP6795362B2 (ja) * 2016-09-15 2020-12-02 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニーＥ．Ｉ．Ｄｕ Ｐｏｎｔ Ｄｅ Ｎｅｍｏｕｒｓ Ａｎｄ Ｃｏｍｐａｎｙ 接合用の導電性ペースト
JP6440905B2 (ja) * 2016-11-18 2018-12-19 古河電気工業株式会社 接合フィルム、ウエハ加工用テープ、接合体の製造方法および接合体
US11094865B2 (en) * 2017-01-26 2021-08-17 Suzhou Lekin Semiconductor Co., Ltd. Semiconductor device and semiconductor device package
KR102369822B1 (ko) * 2017-03-22 2022-03-03 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자 및 반도체 소자 패키지
JP2018159742A (ja) * 2017-03-22 2018-10-11 セイコーエプソン株式会社 波長変換素子、光源装置及びプロジェクター
JP6516277B1 (ja) * 2018-12-18 2019-05-22 株式会社半導体熱研究所 半導体素子接合部材
TW202034478A (zh) * 2019-02-04 2020-09-16 日商索尼半導體解決方案公司 電子裝置
WO2021010171A1 (ja) * 2019-07-16 2021-01-21 古河電気工業株式会社 接合フィルム、ウエハ加工用テープ、接合体の製造方法、接合体および貼合体
US20240038706A1 (en) * 2020-07-27 2024-02-01 Sony Semiconductor Solutions Corporation Electronic device
KR20230092943A (ko) * 2020-10-22 2023-06-26 가부시끼가이샤 레조낙 회로 접속용 접착제 필름, 접속 구조체, 및 접속 구조체의 제조 방법
JPWO2022176563A1 (zh) * 2021-02-19 2022-08-25

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1564726A (zh) * 2002-09-18 2005-01-12 株式会社荏原制作所 接合材料和接合方法
CN1303175C (zh) * 2002-09-04 2007-03-07 纳美仕有限公司 导电性粘接剂及使用它的电路

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01191452A (ja) * 1988-01-27 1989-08-01 Hitachi Ltd 半導体装置
JPH09326416A (ja) * 1996-06-05 1997-12-16 Kokusai Electric Co Ltd 半導体素子の実装方法およびその製品
JP3827569B2 (ja) 2001-12-06 2006-09-27 旭化成エレクトロニクス株式会社 微細パターン接続用回路部品およびその形成方法
JP2004128357A (ja) * 2002-10-04 2004-04-22 Ebara Corp 電極配設基体及びその電極接合方法
JP2005116612A (ja) * 2003-10-03 2005-04-28 Murata Mfg Co Ltd フリップチップ実装方法およびこの方法を用いた電子回路装置
JP4255847B2 (ja) 2004-01-27 2009-04-15 田中貴金属工業株式会社 金属ペーストを用いた半導体ウェハーへのバンプの形成方法
JP4365351B2 (ja) * 2005-07-06 2009-11-18 田中貴金属工業株式会社 バンプ
US7745013B2 (en) * 2005-12-30 2010-06-29 Intel Corporation Solder foams, nano-porous solders, foamed-solder bumps in chip packages, methods of assembling same, and systems containing same
JP4895994B2 (ja) 2006-12-28 2012-03-14 株式会社日立製作所 金属粒子を用いた接合方法及び接合材料
JP4872663B2 (ja) 2006-12-28 2012-02-08 株式会社日立製作所 接合用材料及び接合方法
JP4737116B2 (ja) 2007-02-28 2011-07-27 株式会社日立製作所 接合方法
JP5202858B2 (ja) 2007-03-23 2013-06-05 古河電気工業株式会社 銅微粒子の製造方法
JP5123633B2 (ja) 2007-10-10 2013-01-23 ルネサスエレクトロニクス株式会社 半導体装置および接続材料
WO2009079216A1 (en) * 2007-12-18 2009-06-25 3M Innovative Properties Company Conductive adhesive precursor, method of using the same, and article
JP5376808B2 (ja) * 2008-01-25 2013-12-25 Ｄｉｃ株式会社 透明導電性フィルムの製造方法、透明導電性フィルム及びタッチパネル
WO2009122467A1 (ja) 2008-04-04 2009-10-08 ニホンハンダ株式会社 金属製部材の接合方法、金属製部材接合体、および、電気回路接続用バンプの製造方法
JP2009253018A (ja) * 2008-04-07 2009-10-29 Shinkawa Ltd ボンディング装置及びボンディング方法
JP4470193B2 (ja) 2008-05-01 2010-06-02 ニホンハンダ株式会社 加熱焼結性銀粒子の製造方法、固形状銀の製造方法、金属製部材の接合方法、プリント配線板の製造方法および電気回路接続用バンプの製造方法
JP5363839B2 (ja) 2008-05-12 2013-12-11 田中貴金属工業株式会社 バンプ及び該バンプの形成方法並びに該バンプが形成された基板の実装方法
DE102008039828A1 (de) 2008-08-27 2010-03-04 W.C. Heraeus Gmbh Steuerung der Porosität von Metallpasten für den druckfreien Niedertemperatursinterprozess
JP5048031B2 (ja) * 2009-09-25 2012-10-17 ナミックス株式会社 導電性接着剤およびそれを用いた回路

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1303175C (zh) * 2002-09-04 2007-03-07 纳美仕有限公司 导电性粘接剂及使用它的电路
CN1564726A (zh) * 2002-09-18 2005-01-12 株式会社荏原制作所 接合材料和接合方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108174618A (zh) * 2015-09-30 2018-06-15 日东电工株式会社 加热接合用片材及带有切割带的加热接合用片材
CN108174618B (zh) * 2015-09-30 2021-05-18 日东电工株式会社 加热接合用片材及带有切割带的加热接合用片材
CN109642123A (zh) * 2016-12-21 2019-04-16 古河电气工业株式会社 接合膜及晶圆加工用带
CN109642123B (zh) * 2016-12-21 2021-07-02 古河电气工业株式会社 接合膜及晶圆加工用带

Also Published As

Publication number Publication date
EP2560197A1 (en) 2013-02-20
KR101755749B1 (ko) 2017-07-07
EP2560197A4 (en) 2016-04-27
WO2011114751A1 (ja) 2011-09-22
JP5158904B2 (ja) 2013-03-06
CN102812543A (zh) 2012-12-05
KR20130053400A (ko) 2013-05-23
US10177079B2 (en) 2019-01-08
US20130001775A1 (en) 2013-01-03
JPWO2011114751A1 (ja) 2013-06-27

Similar Documents

Publication Publication Date Title
CN102812543B (zh) 导电连接部件和导电连接部件的制作方法
JP5041454B2 (ja) 導電接続部材
JP5416153B2 (ja) 導電性ペースト、及びその製造方法、並びに導電接続部材
JP4848674B2 (ja) 樹脂金属複合導電材料およびその製造方法
US20130119322A1 (en) Conductive sintered layer forming composition
EP2940727A1 (en) Substrate for power module, substrate for power module having metal member, power module having metal member, method for manufacturing substrate for power module, method for manufacturing substrate for power module having metal member
JP6372978B2 (ja) 導電性ペースト
US9165849B2 (en) Electronic device
TWI476266B (zh) 異方性導電膏
JP2006344938A (ja) 厚膜導体組成物ならびにｌｔｃｃ回路およびデバイスにおけるその使用
JPH11150135A (ja) 熱伝導性が良好な導電性ペースト及び電子部品
JP2013041884A (ja) 半導体装置
JP6133149B2 (ja) 導電性ペースト、及びその製造方法
CN113302503B (zh) 探针基板以及电性连接装置
JP2006108523A (ja) 異方性導電フィルムを用いた電気部品の接続方法
JP2005150120A (ja) Ｌｔｃｃテープ用厚膜導体ペースト組成物
CN109560062B (zh) 接合构造及半导体封装
US20240149340A1 (en) Joint structure
JP2001168140A (ja) 半導体素子の実装方法及び半導体装置
JP2002043757A (ja) 多層基板及びその製造方法
CN104425052A (zh) 功能性材料
JP4738166B2 (ja) 配線基板およびその製造方法
US20230198186A1 (en) Connection body and method for manufacturing connection body
JP2752301B2 (ja) セラミック基板用組成物及びセラミック配線基板
CN115244786A (zh) 连接体以及连接体的制造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant