CN102709187B - Semiconductor device and its manufacture method - Google Patents
Semiconductor device and its manufacture method Download PDFInfo
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- CN102709187B CN102709187B CN201210093069.4A CN201210093069A CN102709187B CN 102709187 B CN102709187 B CN 102709187B CN 201210093069 A CN201210093069 A CN 201210093069A CN 102709187 B CN102709187 B CN 102709187B
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- film
- hydrogen
- oxide semiconductor
- semiconductor film
- transistor
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 415
- 238000000034 method Methods 0.000 title claims abstract description 102
- 238000004519 manufacturing process Methods 0.000 title abstract description 41
- 239000001257 hydrogen Substances 0.000 claims abstract description 281
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 281
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 268
- 239000012528 membrane Substances 0.000 claims abstract description 100
- 238000010438 heat treatment Methods 0.000 claims abstract description 99
- 230000015572 biosynthetic process Effects 0.000 claims description 37
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 36
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 33
- 229910007541 Zn O Inorganic materials 0.000 claims description 23
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 17
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 claims description 15
- 229910052738 indium Inorganic materials 0.000 claims description 9
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- 230000035699 permeability Effects 0.000 claims description 3
- 238000006356 dehydrogenation reaction Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 869
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 82
- 239000001301 oxygen Substances 0.000 description 82
- 229910052760 oxygen Inorganic materials 0.000 description 82
- 238000005530 etching Methods 0.000 description 76
- 239000000758 substrate Substances 0.000 description 68
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 43
- 239000013078 crystal Substances 0.000 description 32
- 239000007789 gas Substances 0.000 description 32
- 230000007547 defect Effects 0.000 description 30
- 239000000463 material Substances 0.000 description 28
- 230000008569 process Effects 0.000 description 27
- 229910052757 nitrogen Inorganic materials 0.000 description 22
- 239000003990 capacitor Substances 0.000 description 20
- 230000002829 reductive effect Effects 0.000 description 18
- 238000001312 dry etching Methods 0.000 description 16
- 150000002431 hydrogen Chemical class 0.000 description 15
- 238000004544 sputter deposition Methods 0.000 description 15
- 239000012535 impurity Substances 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 230000008595 infiltration Effects 0.000 description 13
- 238000001764 infiltration Methods 0.000 description 13
- 238000001259 photo etching Methods 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 230000005611 electricity Effects 0.000 description 12
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 12
- 229910052783 alkali metal Inorganic materials 0.000 description 11
- 150000001340 alkali metals Chemical class 0.000 description 11
- 239000004973 liquid crystal related substance Substances 0.000 description 11
- 125000004430 oxygen atom Chemical group O* 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 150000001875 compounds Chemical class 0.000 description 10
- 239000004020 conductor Substances 0.000 description 10
- 238000003860 storage Methods 0.000 description 10
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 9
- 239000012298 atmosphere Substances 0.000 description 9
- 230000006870 function Effects 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 238000004458 analytical method Methods 0.000 description 8
- 238000009413 insulation Methods 0.000 description 8
- 229910044991 metal oxide Inorganic materials 0.000 description 8
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000013500 data storage Methods 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 6
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 239000004411 aluminium Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 230000001629 suppression Effects 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 239000011701 zinc Substances 0.000 description 5
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 4
- 229910052801 chlorine Inorganic materials 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- -1 copper-magnesium-aluminum Chemical compound 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 230000003628 erosive effect Effects 0.000 description 4
- 229910052744 lithium Inorganic materials 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 229910052708 sodium Inorganic materials 0.000 description 4
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 3
- 229910019092 Mg-O Inorganic materials 0.000 description 3
- 229910019395 Mg—O Inorganic materials 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 3
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 3
- 150000001342 alkaline earth metals Chemical class 0.000 description 3
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- 238000010276 construction Methods 0.000 description 3
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- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910001195 gallium oxide Inorganic materials 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 150000002927 oxygen compounds Chemical class 0.000 description 3
- 238000004151 rapid thermal annealing Methods 0.000 description 3
- 229910017083 AlN Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910018503 SF6 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000003851 corona treatment Methods 0.000 description 2
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- 238000007667 floating Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
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- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
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- 238000013508 migration Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 2
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 2
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- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 2
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- 238000012360 testing method Methods 0.000 description 2
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- 239000010409 thin film Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
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- 229910052724 xenon Inorganic materials 0.000 description 2
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- 229910052725 zinc Inorganic materials 0.000 description 2
- VUFNLQXQSDUXKB-DOFZRALJSA-N 2-[4-[4-[bis(2-chloroethyl)amino]phenyl]butanoyloxy]ethyl (5z,8z,11z,14z)-icosa-5,8,11,14-tetraenoate Chemical compound CCCCC\C=C/C\C=C/C\C=C/C\C=C/CCCC(=O)OCCOC(=O)CCCC1=CC=C(N(CCCl)CCCl)C=C1 VUFNLQXQSDUXKB-DOFZRALJSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 101100113692 Caenorhabditis elegans clk-2 gene Proteins 0.000 description 1
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- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 102100040862 Dual specificity protein kinase CLK1 Human genes 0.000 description 1
- 102100040844 Dual specificity protein kinase CLK2 Human genes 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
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- 229910003910 SiCl4 Inorganic materials 0.000 description 1
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- 230000017525 heat dissipation Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
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- 150000004678 hydrides Chemical class 0.000 description 1
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- 229910052754 neon Inorganic materials 0.000 description 1
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- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
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- 230000003068 static effect Effects 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
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- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
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- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/125—Active-matrix OLED [AMOLED] displays including organic TFTs [OTFT]
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Abstract
There is provided and there is the semiconductor device of outstanding electrical characteristics and manufacture the method for this semiconductor device.A kind of method being used for producing the semiconductor devices comprises the following steps：Form gate electrode；Form gate insulating film with covering grid electrode；Oxide semiconductor film is formed on gate insulating film；Hydrogen-permeable membrane is formed on oxide semiconductor film；Hydrogen capture film is formed on hydrogen-permeable membrane；Execution heat treatment is to discharge hydrogen from oxide semiconductor film；Form the source electrode contacting with a part of oxide semiconductor film and drain electrode；And go dehydrogenation to capture the expose portion of film to form the channel protection film being formed by hydrogen-permeable membrane.The semiconductor device being manufactured by said method is also provided.
Description
Technical field
The present invention relates to including semiconductor device and its manufacture method of oxide semiconductor film.
Background technology
In this manual, semiconductor device refers to all devices that can work by using characteristic of semiconductor；Electric light
Device, semiconductor circuit and electronic installation are included in the category of semiconductor device.
In recent years, for the crystal of the many liquid crystal display devices with flat faced display as representative and light-emitting display device
Pipe is formed on a glass substrate and using the silicon semiconductor of such as non-crystalline silicon or polysilicon.
Substitute silicon semiconductor, oxide semiconductor (it is the metal-oxide with characteristic of semiconductor) is used for transistor
Technology arouse attention.
For example, disclose that (it is using zinc oxide (it is single-component metal oxide) or In-Ga-Zn-O base oxide
Homologous compound) be used as the transistor that oxide semiconductor manufactures display device the switch element of pixel etc. technology
(referring to patent documentation 1 to patent documentation 3).
[list of references]
[patent documentation]
[patent documentation 1] Japanese Laid-Open Patent Application No.2006-165528
[patent documentation 2] Japanese Laid-Open Patent Application No.2007-096055
[patent documentation 3] Japanese Laid-Open Patent Application No.2007-123861
When forming oxide semiconductor film, it is not that the hydrogen of the constitution element of oxide semiconductor film in some cases can
Enter oxide semiconductor film.A part of hydrogen in oxide semiconductor film is used as alms giver to cause electronics as carrier
Generate, which increase the electrical conductivity of oxide semiconductor film.As described above, when hydrogen enters oxide semiconductor film and electrical conductivity
During increase, the characteristic of semiconductor of oxide semiconductor film goes wrong.
For example, containing hydrogen and have increase electrical conductivity oxide semiconductor film be used for channel formation region transistor
In it may appear that problems with：Threshold voltage offsets in the reverse direction, and correspondingly leakage current is not having voltage to be applied to grid electricity
Pole (Vgs=0V) in the state of flow.It should be noted that in this manual, leakage current refers to flowing between source electrode and drain electrode
Electric current.Additionally, in this manual, leakage current is applied to gate electrode (V not having voltagegs=0V) in the state of flowing show
As referred to as often turning on.
In view of the above problems, the purpose of one embodiment of the invention is to provide the semiconductor device with outstanding electrical characteristics
And the method manufacturing this semiconductor device.
Content of the invention
The technical thought of the present invention is：In the transistor of the inclusion oxide semiconductor film as semiconductor device, tool
The film (hydrogen-permeable membrane) having hydrogen permeability matter is formed as contacting with oxide semiconductor film, have hydrogen capture property film (hydrogen is caught
Obtain film) be formed as contacting with hydrogen-permeable membrane, in oxide semiconductor film, contained hydrogen is discharged by heat treatment, and hydrogen passes through hydrogen
Permeable membrane is simultaneously transferred to hydrogen capture film.It should be noted that hydrogen is by hydrogen capture film capture.
One embodiment of the present of invention is the method being used for producing the semiconductor devices, and comprises the following steps：Form gate electrode；
Form gate insulating film with covering grid electrode；Oxide semiconductor film is formed on gate insulating film；Oxide semiconductor film is pressed
Order forms hydrogen-permeable membrane and hydrogen capture film；Execution heat treatment, so that hydrogen discharges from oxide semiconductor film；Formed source electrode and
Drain electrode is to contact with a part for oxide semiconductor film；And remove and the channel formation region weight in oxide semiconductor film
Folded a part of hydrogen capture film, so that form the channel protection film being formed by hydrogen-permeable membrane.
The semiconductor device of method described above manufacture include gate electrode, the gate insulating film of covering grid electrode, on gate insulating film
Oxide semiconductor film, the channel protection film being formed by the hydrogen-permeable membrane on oxide semiconductor film and a part of raceway groove protect
The hydrogen of cuticula contact captures film and captures film and a part of oxide semiconductor with a part of channel protection film, a part of hydrogen
The source electrode of film contact and drain electrode.
Oxidiferous film can be used as becoming the hydrogen-permeable membrane of channel protection film.Therefore, one embodiment of the present of invention
It is the method being used for producing the semiconductor devices, comprise the following steps：Form gate electrode；Form gate insulating film with covering grid electrode；
Oxide semiconductor film is formed on gate insulating film；Oxidiferous hydrogen-permeable membrane is formed in order on oxide semiconductor film
Capture film with hydrogen；Execution heat treatment, so that hydrogen discharges from oxide semiconductor film, and oxygen is half from hydrogen-permeable membrane supply to oxide
Electrically conductive film；Form the source electrode contacting with a part for oxide semiconductor film and drain electrode；And remove partly lead with oxide
The overlapping a part of hydrogen capture film in channel formation region in body film, so that form the channel protection film being formed by hydrogen-permeable membrane.
The semiconductor device of method described above manufacture include gate electrode, the gate insulating film of covering grid electrode, on gate insulating film
Oxide semiconductor film, the channel protection film being formed by oxidiferous hydrogen-permeable membrane and on oxide semiconductor film
The hydrogen of part channel protection film contact captures film and captures film and a part of oxygen with a part of channel protection film, a part of hydrogen
The source electrode of compound semiconductor film contact and drain electrode.
In said structure, the shape that hydrogen captures film can be identical with the shape of source electrode and drain electrode.Therefore, the present invention
An embodiment be the method being used for producing the semiconductor devices, comprise the following steps：Form gate electrode；Formed gate insulating film with
Covering grid electrode；Oxide semiconductor film is formed on gate insulating film；Form the channel protection film being formed by hydrogen-permeable membrane；Formed
The hydrogen capture film contacting with a part of oxide semiconductor film；Execution heat treatment, so that hydrogen discharges from oxide semiconductor film；Shape
Become conducting film；And remove the partially electronically conductive film overlapping with the channel formation region in oxide semiconductor film and the capture of part hydrogen
Film, thus form source electrode and drain electrode.
The semiconductor device of method described above manufacture include gate electrode, the gate insulating film of covering grid electrode, on gate insulating film
Oxide semiconductor film, the channel protection film being formed by hydrogen-permeable membrane on oxide semiconductor film and a part of raceway groove protect
The hydrogen that cuticula, a part of oxide semiconductor film contact with a part of gate insulating film captures film and captures what film contacted with hydrogen
Source electrode and drain electrode.
Oxidiferous film can be used as becoming the hydrogen-permeable membrane of channel protection film.One embodiment of the present of invention be for
The method manufacturing semiconductor device, comprises the following steps：Form gate electrode；Form gate insulating film with covering grid electrode；Exhausted in grid
Oxide semiconductor film is formed on velum；Form the channel protection film being formed by oxidiferous hydrogen-permeable membrane；Formed and one
The hydrogen capture film of isovalent semiconductor film contact；Execution heat treatment, so that hydrogen discharges from oxide semiconductor film, and oxygen is from hydrogen
Permeable membrane is supplied to oxide semiconductor film；Form conducting film；And remove and the channel formation region in oxide semiconductor film
Overlapping partially electronically conductive film and part hydrogen capture film, thus form source electrode and drain electrode.
The semiconductor device of method described above manufacture include gate electrode, the gate insulating film of covering grid electrode, on gate insulating film
Oxide semiconductor film, the channel protection film being formed by oxidiferous hydrogen-permeable membrane and on oxide semiconductor film
The hydrogen that part channel protection film, a part of oxide semiconductor film contact with a part of gate insulating film is captured film and is caught with hydrogen
Obtain source electrode and the drain electrode of film contact.
The conduct gold that the main component as metallic element that hydrogen capture film includes is included with oxide semiconductor film
The main component belonging to element is identical.Hydrogen-permeable membrane does not include the metallic element as main component.Further, since it is oxidiferous
Film can be used as hydrogen-permeable membrane, and therefore hydrogen-permeable membrane can be silicon oxide film, and hydrogen capture film can be containing indium (In) oxynitride
Film.It should be noted that in this manual, oxygen silicon nitride membrane refers to that the amount of wherein oxygen is more than the film of the amount of nitrogen.Additionally, in this specification
In, oxynitride film containing In refer to wherein to comprise In and oxygen amount be more than nitrogen amount film, refer in particular to by oxide material
Expect the film being nitrogenized and being formed.
Therefore, one embodiment of the present of invention is the method being used for producing the semiconductor devices, and comprises the following steps：Form grid
Electrode；Form gate insulating film with covering grid electrode；Oxide semiconductor film is formed on gate insulating film；In oxide semiconductor film
On form silicon oxide film and oxynitride film containing In in order；Execution heat treatment, so that hydrogen discharges from oxide semiconductor film；Shape
Become the source electrode contacting with a part for oxide semiconductor film and drain electrode；And remove and the ditch in oxide semiconductor film
Road forms the part oxynitride film containing In of area overlapping, so that forming channel protection film.
The semiconductor device of method described above manufacture includes：Gate electrode；The gate insulating film of covering grid electrode；On gate insulating film
Oxide semiconductor film；The channel protection film being formed by silicon oxide film or oxygen silicon nitride membrane on oxide semiconductor film；
The oxynitride film containing In contacting with a part of channel protection film；And with a part of channel protection film, a part of nitrogen of oxygen containing In
Source electrode and drain electrode that compound film contacts with a part of oxide semiconductor film.
In said structure, the shape that hydrogen captures film can be identical with the shape of source electrode and drain electrode.Therefore, the present invention
An embodiment be the method being used for producing the semiconductor devices, comprise the following steps：Form gate electrode；Formed gate insulating film with
Covering grid electrode；Oxide semiconductor film is formed on gate insulating film；Form the ditch being formed by silicon oxide film or oxygen silicon nitride membrane
Pipe protection film；Form the oxynitride film containing In contacting with a part of oxide semiconductor film；Execution heat treatment, so that hydrogen is from oxygen
Compound semiconductor film discharges；Form conducting film；And remove the part overlapping with the channel formation region in oxide semiconductor film
Conducting film and part oxynitride film containing In, thus form source electrode and drain electrode.
The semiconductor device of method described above manufacture includes：Gate electrode；The gate insulating film of covering grid electrode；On gate insulating film
Oxide semiconductor film；The channel protection film being formed by silicon oxide film or oxygen silicon nitride membrane on oxide semiconductor film；With
The oxynitride film containing In that a part of channel protection film, a part of oxide semiconductor film contact with a part of gate insulating film；With
And the source electrode that contacts with oxynitride film containing In and drain electrode.
Oxide semiconductor film can be formed using In-Ga-Zn-O sill (it is three component metals oxides), and contains In
Oxynitride film can be by carrying out nitrogenizing being formed to In-Ga-Zn-O sill.It should be noted that in this manual, using In-
The oxide semiconductor film that Ga-Zn-O sill is formed is referred to as IGZO film (In-Ga-Zn-O film), and by In-Ga-Zn-O
Sill carries out nitrogenizing the oxynitride film being formed referred to as IGZON film (In-Ga-Zn-O-N film).
Moreover it is preferred that hydrogen-permeable membrane forms relatively thin, so that discharged from oxide semiconductor film by heat treatment
Hydrogen spreads (infiltration) effectively.Specifically, it is that in silicon oxide film or the situation of oxygen silicon nitride membrane, film thickness is big in hydrogen-permeable membrane
In or be equal to 0.5nm and be less than or equal to 15nm, preferably greater than or equal to 2nm and be less than or equal to 5nm.
The semiconductor device as one embodiment of the invention and for manufacture this semiconductor device method in, exist
Hydrogen in oxide semiconductor film is discharged by heat treatment, and hydrogen is captured by hydrogen-permeable membrane and by hydrogen capture film.Change speech
It, heat treatment enables contained hydrogen in oxide semiconductor film to be transferred to hydrogen capture film.Therefore, the oxygen in semiconductor device
Compound semiconductor film is the oxide semiconductor film that its hydrogen content reduces.Additionally, by (for example, aoxidizing oxidiferous film
Silicon fiml or oxygen silicon nitride membrane) it is used as hydrogen-permeable membrane, thus can be able to reduce by heat treatment by oxygen supply to oxide semiconductor film
Oxygen defect in oxide semiconductor film.
According to one embodiment of present invention, it is possible to provide the oxide including wherein hydrogen concentration and oxygen defect all reductions is partly led
The semiconductor device of body film.Oxide semiconductor film has outstanding characteristic of semiconductor；Therefore, an enforcement according to the present invention
Example, it is possible to provide there is the semiconductor device of outstanding electrical characteristics.
Brief description
In the accompanying drawings：
Figure 1A and 1B is top view and the sectional view of the semiconductor device as one embodiment of the invention；
Fig. 2A to 2D is the sectional view of the method being used for producing the semiconductor devices being shown as one embodiment of the invention；
Fig. 3 A to 3C is the sectional view of the method being used for producing the semiconductor devices being shown as one embodiment of the invention；
Fig. 4 A and 4B is top view and the sectional view of the semiconductor device as one embodiment of the invention；
Fig. 5 A to 5D is the sectional view of the method being used for producing the semiconductor devices being shown as one embodiment of the invention；
Fig. 6 A to 6E is the sectional view of the method being used for producing the semiconductor devices being shown as one embodiment of the invention；
Fig. 7 is the circuit of the example of liquid crystal display device of inclusion transistor being shown as one embodiment of the invention
Figure；
Fig. 8 A is the circuit diagram of the example of the semiconductor storage unit being shown as one embodiment of the invention, and Fig. 8 B is
The voltage time history plot that capacitor is kept is shown；
Fig. 9 A is the circuit diagram of the example of the semiconductor storage unit being shown as one embodiment of the invention, and Fig. 9 B is
The curve chart of relation between the voltage illustrating capacitor wiring and the leakage current flowing through transistor；
Figure 10 A is the block diagram of the specific example of CPU of inclusion transistor being shown as one embodiment of the invention, and schemes
10B and 10C is the circuit diagram each illustrating part CPU；
Figure 11 A is the external view of the example illustrating television equipment, and Figure 11 B is the outer of example illustrating DPF regards
Figure；And
Figure 12 is the chart illustrating the distribution of hydrogen concentration in oxide semiconductor film.
Specific embodiment
Hereinafter with reference to Description of Drawings embodiments of the invention.However, the invention is not restricted to following description, and this area
Technical staff it is easily understood that these modes and details can change in a different manner, unless deviate from the scope of the present invention and
Spirit.Therefore, the present invention should not be construed as limited to the description of following all embodiments.It should be noted that with sharing in different figures
Same reference numerals indicate in the structure of following present invention that there are one or more same sections of identical function, and will save
Repeated description slightly to it.
It should be noted that in each accompanying drawing in this manual, in some cases, for clarity, size, thickness or
The region of each part is exaggerated.Therefore, embodiments of the invention are not limited to this scaling.
It should be noted that in this manual, in order to avoid obscuring using such as " first ", " second " and " the between assembly
Three " term, these terms not quantitatively limiter assembly.Therefore, for example, term " first " can be by term "
Two ", " 3rd " etc. is substituted as.
It should be noted that in the case that the sense of current changes during such as circuit operation, the function of " source electrode " and " drain electrode "
Can mutually switch.Therefore, term " source electrode " and " drain electrode " can be respectively used to represent drain electrode and source electrode in this manual.
In this manual, in the case of using Etching mask execution etching, remove resist after the etching and cover
Mould, even if not to the description removing Etching mask in this specification.
It should be noted that in this manual, " on-state current " is in source electrode and drain electrode when transistor is for conducting state
Between flowing electric current.For example, in the situation of n-channel thin film transistor, on-state current is the gate voltage in transistor
The electric current flowing between the source and drain during higher than its threshold voltage.Additionally, " OFF-state current " is to be non-in transistor
The electric current by mistake flowing between source electrode and drain electrode during conducting state.For example, in the situation of n-channel thin film transistor, cut
Only state current is the electric current flowing between the source and drain when the gate voltage of transistor is less than its threshold voltage.
(embodiment 1)
In this embodiment, will be described as the semiconductor device of one embodiment of the invention.Herein, using transistor as
The example of semiconductor device is being described.Transistor can have top contact structure or bottom contact structures, as long as it has bottom gate
Structure will describe the example as this embodiment for the bottom gate top contact transistor.
Figure 1A is the top view of transistor 100.Figure 1B is the sectional view being taken along the chain-dotted line A-B in Figure 1A.
Transistor 100 includes gate electrode 103 on substrate 101, the gate insulating film 105 of covering grid electrode 103, gate insulating film
Oxide semiconductor film 115 on 105, on oxide semiconductor film 115 by the film (hydrogen-permeable membrane) with hydrogen permeability matter
Channel protection film 121, source electrode 125a of contact portion oxide semiconductor film 115 and drain electrode 125b and the ditch being formed
The film (hydrogen capture film) each with hydrogen capture property between pipe protection layer 121 and source electrode and drain electrode 125a and 125b
123a and 123b.It should be noted that for the sake of clarity, not shown gate insulating film 105 in figure ia.Hydrogen capture film 123a in fig. ib
With the end of 123b, there is cone angle, but for the sake of clarity, not shown hydrogen captures the cone angle of film 123a and 123b in figure ia.
In transistor according to an embodiment of the invention, in addition to the channel protection film being formed on channel formation region, dielectric film
May be formed on channel protection film to cover the end of oxide semiconductor film.
Transistor 100 has bottom grating structure, and wherein gate electrode 103 is arranged on the substrate 101.Additionally, transistor 100 has
Top contact structure, wherein source electrode and drain electrode 125a and 125b are disposed in contact with the top surface of oxide semiconductor film 115
A part.
In transistor 100, hydrogen capture film 123a gate electrode formed therein 103, oxide semiconductor film 115, raceway groove
In the region that protective layer 121 and source electrode 125a overlap each other, and hydrogen capture film 123b gate electrode formed therein 103, oxidation
In the region that thing semiconductor film 115, channel protective layer 121 and drain electrode 125b overlap each other.
Hydrogen capture film 123a and 123b and source electrode and drain electrode 125a and 125b utilize identical Etching mask simultaneously
Formed, thus hydrogen capture film 123a and 123b is disposed separately.
Although the width W_OS of oxide semiconductor film 115 is more than gate electrode 103 in the transistor 100 of Figure 1A and 1B
Width W_GE, but the width W_OS of oxide semiconductor film 115 is smaller than the width W_GE of gate electrode 103.This structure
Can prevent from being exposed to the light (as visible ray and ultraviolet light) entering from the rear surface of substrate 101；Therefore, in the transistor completing
Can reduce in 100 and be deteriorated by the electrical characteristics that the irradiation of light causes.It should be noted that as the electrical characteristics deterioration being caused by the irradiation of light
Example, provides the negative offset of threshold voltage and the increase of OFF-state current.
Oxide semiconductor film 115 is used as the channel formation region of transistor 100.Channel protection film 121 is arranged on oxide
On semiconductor film 115, so that the channel length of transistor 100 corresponds to the width W_CS of channel protection film 121.Setting raceway groove is protected
Cuticula 121 can prevent oxide semiconductor film 115 to be etched during forming source electrode and drain electrode 125a and 125b.Therefore,
The defect that this etching causes can be suppressed；Therefore, the transistor 100 being completed can have good electrical characteristics.
The method manufacturing transistor 100 below with reference to Fig. 2A to 2D and Fig. 3 A to 3C description.
Material to substrate 101 etc. is not specifically limited, if this material have sufficiently high thermostability to tolerate after
The heat treatment of execution.For example, glass substrate, ceramic substrate, quartz substrate, Sapphire Substrate etc. can be used as substrate 101.Or
Person, the single crystal semiconductor substrate being made up of silicon, carborundum etc. or poly semiconductor substrate, partly led by the compound that SiGe etc. is made
Body substrate, SOI substrate etc. can be used as substrate 101.Additionally, any these substrates being provided with semiconductor element can be used as substrate 101.
Additionally, can use being formed using metal material there is electric conductivity and be formed with the substrate of dielectric film thereon.
Flexible substrate also is used as substrate 101.In transistor setting situation on flexible substrates, according to the present invention one
The oxide semiconductor film of individual embodiment can be formed directly in flexible substrate.Or, have been formed on another substrate (different from soft
The substrate of property substrate) on oxide semiconductor film can be separated and be transferred in flexible substrate.It should be noted that aoxidizing to separate
Thing semiconductor film is simultaneously transferred in flexible substrate, arranges easily to enter preferably between various substrates and oxide semiconductor film
The detached region of row.
Using the conductive material being applied to gate electrode 103, by conducting film formed on the substrate 101 with have single layer structure or
Stepped construction.The example of conductive material include such as the monometallic of aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum and tungsten and
Comprise any one in these metals as main component alloy.For example, provide the single layer structure of siliceous aluminium film, titanium film is formed
It is formed at double on copper-magnesium-aluminum alloy film in the double-decker that the double-decker in aluminium film, titanium film are formed on tungsten film, copper film
Rotating fields and with the three-decker of the order of titanium film, aluminium film and titanium film stacking additionally, such as Indium sesquioxide., stannum oxide can be used
Or the transparent conductive material of zinc oxide.
By photoetching process, Etching mask is formed on the conducting film using conductive material formation, then utilizes against corrosion
Conducting film is etched into required form to form gate electrode 103 by agent mask.It should be noted that Etching mask both can pass through photoetching work
Skill, also can be properly formed by ink-jet method, print process etc..Etching can be dry etching or wet etching.Preferred process is led
Electrolemma is so that the end of gate electrode 103 has cone angle.This is because using the gate electrode with cone angle, can improve in transistor
The coverage rate of the film being formed in the subsequent step after this step in 100 manufacturing process, and the discontinuous of film can be prevented.
Gate electrode 103 also has the function of grid wiring.May depend on the resistance of above-mentioned conductive material and manufacturing step
Period suitably determines the thickness of gate electrode 103.For example, the thickness of gate electrode 103 more than or equal to 10nm and can be less than or wait
In 500nm.
In transistor 100, based insulation film may be provided between substrate 101 and gate electrode 103.Based insulation film prevents impurity
(such as alkali metal, such as Li or Na) spreads from substrate 101, and prevents etching substrate 101 during forming gate electrode 103.Can profit
Form based insulation film with the material being applied to following gate insulating films 105 to have the thickness of 50nm or more.
Then, gate insulating film 105 is formed on gate electrode 103.As the material being applied to gate insulating film 105, can use
Selected from following any dielectric film：Oxide insulating film, such as silicon oxide film, gallium oxide film and pellumina；Nitride insulation film,
As silicon nitride film and aluminium nitride film；Oxygen silicon nitride membrane；Oxynitriding aluminium film；And silicon oxynitride film.It should be noted that gate insulating film 105
Preferably contact with the oxide semiconductor film 107 being formed afterwards partly in comprise oxygen.
In this this specification, silicon oxynitride refers to the material that oxygen content is more than nitrogen content, and silicon oxynitride refers to nitrogen content and is more than
The material of oxygen content.
Aluminium nitride film, nitrogen oxidation aluminium film and the silicon nitride film with high heat conductance when for gate insulating film 105, for changing
The heat dissipation entering transistor 100 is particularly effective.
Because the alkali metal of such as Li or Na is the impurity in the manufacturing process of transistor 100, therefore alkali-metal amount is excellent
Choosing is less.It is used as in the situation of substrate 101 in the glass substrate containing such as alkali-metal impurity, above-mentioned nitride insulation film is preferred
Be formed as gate insulating film 105 to prevent alkali-metal entrance.
It should be noted that by above-mentioned nitride insulation film be used as gate insulating film 105 situation in, in gate insulating film 105 with
The region of oxide semiconductor film 107 contact being formed afterwards preferably comprises oxygen；Therefore, oxide insulating film can be layered in nitridation
On thing dielectric film.
Further, since gate insulating film 105 is preferably in the partly middle bag contacting with the oxide semiconductor film 107 being formed afterwards
Oxygen-containing, therefore gate insulating film 105 be can be used as by the dielectric film that heating therefrom discharges oxygen.It should be noted that " by heating release oxygen "
Expression represent pyrolysis absorption spectrography (TDS) analysis in be converted into oxygen atom oxygen evolution amount be more than or equal to 1.0 ×
1018cm-3, preferably greater than or equal to 3.0 × 1020cm-3.
The method to quantify to be converted into the oxygen evolution amount of oxygen atom using TDS analysis is below described.
Gas burst size in TDS analysis is proportional to the integrated value of ionic strength.Therefore, can be from recording ionic strength
Integrated value calculates gas burst size with the ratio of the reference value of master sample.The reference value of master sample refers to contained pre- in sample
Determine the ratio of atomic density and the integrated value of ionic strength.
For example, by the use of TDS analysis result and the dielectric film of the silicon wafer of the hydrogen containing predetermined density as master sample
TDS analysis result, according to numerical expression 1 can find out from dielectric film release oxygen molecule number (NO2).Here, it is assumed that by
TDS analyzes all ionic strengths that the mass number obtaining is 32 and is derived from oxygen molecule.Be given as the gas that mass number is 32
CH3OH supposes that it is less likely to be present and does not consider.Additionally, being 17 or 18 containing the isotopic mass number as oxygen atom
The oxygen molecule of oxygen atom do not consider, because this molecule is extremely low in the ratio of nature yet.
NO2=NH2/SH2×SO2× α (numerical expression 1)
NH2It is the value by density will be converted into and obtains from the hydrogen molecule number of master sample desorbing.SH2It is in standard
The integrated value of ionic strength when sample experiences TDS analysis.Herein, the reference value of master sample is set to NH2/SH2.SO2It is in insulation
The integrated value of ionic strength when film experiences TDS analysis.α is the coefficient that impact TDS analyzes ionic strength.For numerical expression
1 details, refers to Japanese Laid-Open Patent Application No.H6-275697.It should be noted that the value of above-mentioned oxygen evolution amount is by using ESCO
The thermal desorption spectrogrph EMD-WA1000S/W that company limited produces measures and uses hydrogen atom content to be 1 × 1016cm-3's
Silicon wafer obtains as master sample.
Additionally, in TDS analysis, the oxygen of part release is detected as oxygen atom.The ratio of oxygen molecule and oxygen atom can be from
The ionization rate of oxygen molecule calculates.It should be noted that because above-mentioned α includes the ionization rate of oxygen molecule, the therefore number of the oxygen atom of release
Also can be estimated by assessing the number of the oxygen molecule discharging.
It should be noted that NO2 is the number of discharged oxygen molecule.In dielectric film, when being converted into oxygen atom, oxygen evolution amount
It is the twice of the number of discharged oxygen molecule.
As the example therefrom discharging the dielectric film of oxygen by heating, provide the silicon oxide (SiOX (X ＞ 2)) of oxygen excess
Film.In silicon oxide (SiOX (X the ＞ 2)) film of oxygen excess, the number of the oxygen atom of per unit volume is more than per unit volume
The twice of the number of silicon atom.By Rutherford backscattering spectrographic method (RBS) measure per unit volume silicon atom number and
The number of oxygen atom.It should be noted that in this embodiment, the silicon oxide film of above-mentioned oxygen excess is used as gate insulating film 105.
Then, oxide semiconductor film 107 is formed on gate insulating film 105.Oxide semiconductor film 107 is using having half
The metal-oxide of conductor characteristics is forming.Band gap is selected to be 2.5eV or more, be preferably for oxide semiconductor film 107
The material of 3.0eV or more, to reduce the OFF-state current of transistor 100.It should be noted that can use characteristic of semiconductor is assumed simultaneously
There is the material of the band gap of above range, to replace the metal-oxide with characteristic of semiconductor.To oxide semiconductor film 107
Degree of crystallinity there is no specific restriction, and can using amorphous oxide semiconductor films, single crystal oxide semiconductor film, polycrystalline oxidation
Thing semiconductor film etc..
Oxide semiconductor film 107 can be oxide semiconductor (CAAC-OS) film of c-axis be aligned crystallization.
CAAC-OS film is not complete monocrystalline, is not completely amorphous.CAAC-OS film is with crystal-amorphous mixing
The oxide semiconductor film of phase structure, wherein crystal block section and amorphous fraction are included in amorphous phase.It should be noted that in most of feelings
In shape, crystal block section loads it and is less than in the cube of 100nm.According to the sight being obtained with transmission electron microscope (TEM)
Examine image, in CAAC-OS film, the obscure boundary between amorphous fraction and crystal block section is clear.Additionally, using TEM, do not find CAAC-OS
Grain boundary in film.Therefore, it is suppressed that the reduction of the electron mobility being caused due to grain boundary in CAAC-OS film.
In each crystal block section that CAAC-OS film includes, the aligning direction of c-axis is parallel to formation CAAC-OS film
The normal vector on the surface of the normal vector on surface or CAAC-OS film, forms from the triangle watched perpendicular to the direction of a-b plane
Shape or hexagon atomic arrangement, and when when watching perpendicular to the direction of c-axis metallic atom arrange in a hierarchical manner, or gold
Belong to atom and oxygen atom arranges in a hierarchical manner.It should be noted that in all crystal block sections, a axle of a crystal block section and the side of b axle
To may differ from a axle of another crystal block section and the direction of b axle.In this manual, simpler term " vertical " is included from 85 °
To 90 ° of scope.Additionally, simpler term " parallel " includes the scope from -5 ° to 5 °.
In CAAC-OS film, the distribution of crystal block section need not be uniform.For example, in the formation process of CAAC-OS film,
Crystal growth from the situation that the face side of oxide semiconductor film occurs, the crystal portion of the near surface of oxide semiconductor film
The ratio divided is higher than the ratio being formed with the crystal block section of the near surface of oxide semiconductor film in some cases.Additionally,
When impurity is added to CAAC-OS film, the crystal block section being added with the region of impurity becomes amorphous in some cases.
The aligning direction of the c-axis of the crystal block section being included due to CAAC-OS film is parallel to the table being formed with CAAC-OS film
The direction of the normal vector on the surface of the normal vector in face or CAAC-OS film, therefore c-axis may depend on the shape of CAAC-OS film
(forming the cross sectional shape on the surface of the cross sectional shape on surface of CAAC-OS film or CAAC-OS film) and different from each other.It should be noted that
When forming CAAC-OS film, the direction of the c-axis of crystal block section is parallel to be formed with the normal vector on the surface of CAAC-OS film
Or the direction of the normal vector on the surface of CAAC-OS film.Formed by film or by executing for crystallization after film formation
Process (as heat treatment) and form crystal block section.
Using CAAC-OS film, the crystal causing due to the irradiation of visible ray or ultraviolet light can be reduced by the transistor
The change of the electrical characteristics of pipe.Therefore, transistor has high reliability.
It should be noted that a part of oxygen that oxide semiconductor film includes can be substituted with nitrogen.
Oxide semiconductor film 107 can be sunk by sputtering method, molecular beam epitaxy, atomic layer deposition method or pulse laser
Area method is formed.Consider the type of film to be formed and its formation time, oxide semiconductor film 107 can be formed required to have
Thickness.Thickness can be greater than or be equal to 10nm and be less than or equal to 100nm, preferably greater than or equal to 10nm and less than or
Equal to 30nm.
As the metal-oxide with characteristic of semiconductor that can be used for oxide semiconductor film 107, following material can be provided
Material.For example, four component metals oxides can be used, such as In-Sn-Ga-Zn-O sill；Three component metals oxides, such as In-
Ga-Zn-O sill, In-Sn-Zn-O sill, In-Al-Zn-O sill, Sn-Ga-Zn-O sill, Al-Ga-Zn-O base
Material or Sn-Al-Zn-O sill；Two component metals oxides, such as In-Zn-O sill, Sn-Zn-O sill, Al-Zn-O
Sill, Zn-Mg-O sill, Sn-Mg-O sill, In-Mg-O sill or In-Ga-O sill；One component metals oxygen
Compound, such as In-O sill, Sn-O sill or Zn-O sill etc..Herein, for example, In-Ga-Zn-O sill represents and contains
The oxide of indium (In), gallium (Ga) and zinc (Zn), and there is no specific restriction to component ratio.
It is used in the situation of oxide semiconductor film 107 in In-Ga-Zn-O sill, component ratio is for In2O3∶Ga2O3∶
The material of ZnO=1: 1: 1 [mol ratio] can be used as the example of the metal-oxide target containing In, Ga and Zn.Or, component can be used
Than for In2O3: the target of Ga2O3: ZnO=1: 1: 2 [mol ratios], component are than for In2O3: Ga2O3: ZnO=1: 1: 4 [mol ratios]
Target or component than for In2O3: the target of Ga2O3: ZnO=2: 1: 8 [mol ratios].
It is used as in the situation of oxide semiconductor film 107 in In-Zn-O sill, the atomic ratio than Zn for the In is greater than or equal to
0.5 and less than or equal to 50, preferably greater than or equal to 1 and less than or equal to 20, more preferably greater than or equal to 1.5 and less than or wait
In 15.When the atomic ratio than Zn for the In in the above range when, the field-effect mobility of transistor 100 can be improved.Herein, work as chemical combination
When the atomic ratio of thing is In: Zn: O=X: Y: Z, preferably meet relation Z ＞ 1.5X+Y.
Additionally, In-Zn-O sill can comprise the element in addition to In, Ga and Zn.For example, Formula I nMO3 (ZnO) m
The material that (m ＞ 0) represents can be used as oxide semiconductor film 107.Herein, M represents the one kind or many selected from Ga, Al, Mn and Co
Plant metallic element.For example, M can be Ga, Ga and Al, Ga and Mn, Ga and Co etc..
Herein, method description being used for forming CAAC-OS film in oxide semiconductor film 107.
The method having following two formation CAAC-OS films：(1) a kind of method is to make oxide semiconductor when heating substrate
The formation of film executes once；(2) another kind of method is to be divided into twice the formation of oxide semiconductor film, and heat treatment is every
Execute after the formation of once oxidation thing semiconductor film.
First, description is formed the situation of CAAC-OS film with method (1).
When heating substrate 101, oxide semiconductor film 107 is formed on gate insulating film 105.It should be noted that as described above,
Oxide semiconductor film 107 can be formed by sputtering method, molecular beam epitaxy, atomic layer deposition method or pulsed laser deposition.
The temperature of setting heating substrate 101, so that the temperature of substrate 101 is greater than or equal to 150 DEG C and is less than or equal to 450
DEG C, further, it is preferred that the temperature of substrate 101 is greater than or equal to 200 DEG C and is less than or equal to 350 DEG C.
During forming oxide semiconductor film 107 temperature setting of substrate 101 is higher, thus can be in oxide half
Form wherein crystal block section and amorphous fraction in electrically conductive film 107 compares high CAAC-OS film.
Then, description is formed the situation of CAAC-OS film with method (2).
When the temperature of substrate 101 is maintained above or is equal to 200 DEG C and during less than or equal to 400 DEG C of temperature, exhausted in grid
Oxide semiconductor film (the first oxide semiconductor film) as ground floor is formed on velum 105, then nitrogen, oxygen,
In the atmosphere of rare gas or dry air greater than or equal to 550 DEG C and less than substrate 101 strain point at a temperature of execute
Heat treatment.By heat treatment, form crystal region in including the region of top surface of the first oxide semiconductor film and (include tabular
Crystal).Then, form oxide semiconductor film (second oxide as the second layer thicker than the first oxide semiconductor film
Semiconductor film).Then, greater than or equal to 550 DEG C and less than substrate 101 strain point at a temperature of execute heat treatment again.
By heat treatment, by the use of the seed crystal including the first oxide semiconductor film of crystal region (inclusion platelike crystal) as crystal growth
Carry out crystal growth upwards, correspondingly make the whole region crystallization of the top surface including the second oxide semiconductor film.Will
Note, the first oxide semiconductor film and the second oxide semiconductor film can use and be applicable to oxide semiconductor film 107
Metal oxide materials are formed.The thickness of the first oxide semiconductor film is preferably greater than or equal to 1nm and is less than or equal to 10nm.
It should be noted that the hydrogen being formed afterwards captures the metallic element preferably including and being formed oxide semiconductor film 107 in film
Identical metallic element, and further, hydrogen capture film is preferably oxynitride film containing In.Therefore, in this embodiment, make
For oxide semiconductor film 107, In-Ga-Zn-O sill is used to form IGZO film by method (1) (and sputtering method).Cause
This, IGZO film is CAAC-OS film.
Although the hydrogen in oxide semiconductor film 107 can form oxidation by the heat treatment release executing afterwards
The hydrogen concentration comprising in oxide semiconductor film 107 during thing semiconductor film 107 preferably reduces as far as possible.Specifically, when passing through
When sputtering method forms oxide semiconductor film 107, in order to reduce hydrogen concentration, therefrom eliminate impurity (as hydrogen gas and water, hydroxyl groups
Or hydride) oxygen, high-purity rare gas (usually argon) or the mixed gas of rare gas and oxygen can be suitably
The atmosphere gas of the processing chamber housing as supply to sputter equipment.Additionally, for emptying process chamber, can using and there is high draining
The cryopump of ability and the combination with the high sputter ion pump arranging Hydrogen Energy power.
Using above-mentioned sputter equipment and sputtering method, the less oxide semiconductor film of hydrogen content 107 can be formed.It should be noted that
Even if when using sputter equipment and sputtering method, oxide semiconductor film 107 still contains some nitrogen.For example, use secondary ion
The nitrogen concentration of the oxide semiconductor film 107 that mass spectrography (SIMS) records is less than 5 × 1018cm-3.
Illustrated in fig. 2 by the structure that step so far obtains.
Hydrogen-permeable membrane 109 is formed on oxide semiconductor film 107.Hydrogen-permeable membrane 109 is used as the heat by executing afterwards
Process the film therefrom spreading (infiltration) from the hydrogen of oxide semiconductor film 107 release.Due in follow-up manufacturing step by hydrogen
Permeable membrane 109 is processed into channel protection film 121, and therefore hydrogen-permeable membrane 109 is formed using dielectric film.As formation hydrogen-permeable membrane
109 method, the method except such as can be used for the sputtering method forming oxide semiconductor film 107, plasma CVD can be used
Method.
The channel protection film 121 being formed by processing hydrogen-permeable membrane 109 has holding in the technique manufacturing transistor 100
The clean function of oxide semiconductor film as the channel formation region surface of oxide semiconductor film (especially).Concrete and
Speech, because in the technique manufacturing transistor 100, hydrogen-permeable membrane 109 is arranged on oxide semiconductor film 107, therefore can prevent
Defect and the pollution of organic substance that in subsequent fabrication steps after this step, the dry etching of execution causes.As a result, complete
The transistor 100 becoming can have good electrical characteristics.
Herein, the less state compared with the oxygen of stoichiometric proportion in oxide semiconductor of the amount of description oxygen, i.e. oxide
Defect (Lacking oxygen) in quasiconductor.During or after forming oxide semiconductor film, in some cases due to oxide
Oxygen defect in semiconductor film and generate electric charge.Part Lacking oxygen in oxide semiconductor is typically used as alms giver, and it leads to use
Make carrier electronics generate and lead to formed oxide semiconductor film electrical conductivity increase.Therefore, the oxygen of formation
The characteristic of semiconductor deterioration of compound semiconductor film.In the transistor of the oxide semiconductor film that inclusion has oxygen defect, occur
The deterioration of electrical characteristics, the such as negative offset of threshold voltage and the increase of OFF-state current.
Therefore, the film containing oxide is used as hydrogen-permeable membrane 109, and from there through the heat treatment executing afterwards, hydrogen can be from oxygen
Compound semiconductor film 107 discharges and oxygen can be supplied to oxide semiconductor film 107.By supplying to oxide semiconductor film 107
Answer oxygen, the oxygen defect in oxide semiconductor film 107 the correspondingly generation as the electronics of carrier for the suppression can be reduced.Specifically
For, silicon oxide film or oxygen silicon nitride membrane can be used as oxidiferous film.
Moreover it is preferred that hydrogen-permeable membrane 109 forms relatively thin, so that passing through the heat treatment executing afterwards from oxide half
The hydrogen of electrically conductive film 107 release spreads (infiltration) effectively.Specifically, it is silicon oxide film or silicon oxynitride in hydrogen-permeable membrane 109
In the situation of film, its thickness more than or equal to 0.5nm and can be less than or equal to 15nm, preferably greater than or equal to 2nm and being less than
Or it is equal to 5nm.
It should be noted that in the present embodiment, as hydrogen-permeable membrane 109, the thickness that silicon oxide film reaches 5nm is formed by sputtering method
Degree.
Then, hydrogen capture film 111 is formed on hydrogen-permeable membrane 109.Hydrogen capture film 111 is to have passed through heat treatment for capture
Discharge and spread, from oxide semiconductor film 107, the film that (infiltration) passes through the hydrogen of hydrogen-permeable membrane 109.Capture film to being applied to hydrogen
111 film does not have specific restriction, as long as this film has above-mentioned functions, and can use such as conducting film, dielectric film or quasiconductor
Film.As forming the method that hydrogen captures film 111, except such as can be used for the side of the sputtering method forming oxide semiconductor film 107
Method, can use plasma CVD method.
Specifically, hydrogen capture film 111 is preferably oxynitride film containing In.For example, oxynitride film containing In is using extremely
Few indium nitride and Indium sesquioxide., gallium oxide, zinc oxide, stannum oxide, aluminium oxide, tungsten oxide, molybdenum oxide, titanium oxide, tantalum oxide and
The film that one or more of silicon oxide material is formed.Additionally, the nitrogen concentration that hydrogen captures in film 111 is greater than or equal to
0.01at.% (atomic percent) and be less than 7at.%, or greater than or equal to 7at.% and be less than or equal to 20at.%.
Additionally, hydrogen capture film 111 is not limited to semiconductor film, as long as it is to spread (infiltration) for capture to permeate by hydrogen
The film of the hydrogen of film 109.For example, conducting film or dielectric film can be used.For example, its nitrogen concentration is more than or equal to 0.01at.%
And the oxynitride film of the nitrogen indium less than 7at.% has high-insulativity matter.Its nitrogen concentration is more than or equal to 7at.% and little
In or be equal to the oxynitride film of nitrogen indium of 20at.% there is when hydrogen is combined high conductivity in some cases.Will
Note, the nitrogen concentration that hydrogen captures in film 111 can be analyzed to quantify by x-ray photoelectron spectroscopy (XPS).
The oxynitride film containing In capturing the example description of film 111 as hydrogen may be provided at gate electrode 103 and gate insulating film
Between 105.The part hydrogen comprising in oxynitride film containing In generates the electronics as carrier.Because electronics has negative charge,
Therefore in the way of similar to the situation applying back bias voltage from gate electrode, generate electric field, so that the threshold voltage of transistor is in pros
Offset up.Hydrogen concentration in oxynitride film containing In can be controlled by controlling the nitrogen concentration in oxynitride film containing In.Will
Note, the hydrogen concentration in oxynitride film can be quantified by SIMS, and be set greater than or be equal to 1 × 1019cm-3And be less than
Or it is equal to 5 × 1020cm-3, preferably greater than or equal to 1 × 1020cm-3And it is less than or equal to 3 × 1020cm-3.In oxynitride film
Hydrogen concentration is set in the above range, thus can suppress the negative offset of the threshold voltage of transistor.
In the situation that the oxynitride film containing In capturing film 111 for hydrogen is formed by sputtering method, using inclusion at least
The target of Indium sesquioxide. and supply nitriding gas.As target, except Indium sesquioxide., it is also possible to use including gallium oxide, zinc oxide, oxidation
At least one material in stannum, aluminium oxide, tungsten oxide, molybdenum oxide, titanium oxide, tantalum oxide and silicon oxide.Nitriding gas comprise
At least nitrogen, and except nitrogen, also can further include at least one in rare gas (as helium, neon, argon, krypton or xenon) and oxygen.
Specifically, the main component of the metallic element that oxide semiconductor film 107 includes can be captured in film 111 with hydrogen
Including metallic element main component identical, therefore hydrogen is captured film 111 and can use and included with oxide semiconductor film 107
Identical metal oxide materials are formed.Therefore, in oxide semiconductor film 107 by nitrogenizing the situation that IGZO film obtains
In, hydrogen captures the IGZON film that film 111 can be as nitridation IGZO film.It should be noted that IGZON film can be same by forming IGZO film
When to obtain in nitrogen supply to the processing chamber housing be used for the device forming IGZO film.
In addition, it is contemplated that the type of film to be formed and its formation time, hydrogen capture film 111 can be formed to have required thickness
Degree.However, hydrogen captures film 111 is preferably formed as obtaining the sufficiently thick hydrogen discharging with effective capture from oxide semiconductor film 107.Specifically
For, its thickness more than or equal to 10nm and can be less than or equal to 500nm.
It should be noted that in the present embodiment, capture film 111 as hydrogen, IGZON film is formed by sputtering method and reaches 100nm's
Thickness.
Gate insulating film 105, oxide semiconductor film 107, hydrogen-permeable membrane 109 and hydrogen capture film 111 can be continuous in a vacuum
Formed.For example, the bag being attached on substrate 101 and the surface of gate electrode 103 is being removed by heat treatment or corona treatment
After including the impurity of hydrogen, gate insulating film 105 can be formed and be not exposed to air, and also oxide semiconductor film can be formed continuously
107th, hydrogen-permeable membrane 109 and hydrogen capture film 111 and are not exposed to air.Formed by above-mentioned continuous film, can reduce and be attached to
The impurity of the inclusion hydrogen on the surface of substrate 101 and gate electrode 103.Additionally, in substrate 101, gate electrode 103, gate insulating film
105th, oxide semiconductor film 107, hydrogen-permeable membrane 109 and hydrogen capture in the lamination of film 111, Atmospheric components can be prevented to be attached to all
Each interface between layer.As a result, can effectively make to discharge from oxide semiconductor film 107 by the heat treatment executing afterwards
Hydrogen diffusion (infiltration) is simultaneously captured.Additionally, the transistor 100 completing can have good electrical characteristics.
Then, heat treatment is executed to the structure obtaining by step so far.By executing heat treatment, oxide semiconductor
The hydrogen that film 107 includes is releasable.The hydrogen infiltration hydrogen-permeable membrane 109 of release is simultaneously captured by hydrogen capture film 111.In other words, lead to
Cross execution heat treatment, the hydrogen that oxide semiconductor film 107 includes is transferred to hydrogen capture film 111.Therefore, by heat treatment,
Form the highly purified oxide semiconductor film 113 that wherein hydrogen concentration reduces.The structure being obtained by step so far is in figure
Shown in 2B.
Additionally, hydrogen-permeable membrane 109 is formed between oxide semiconductor film 107 and hydrogen capture film 111, by this oxide half
Electrically conductive film 107 and hydrogen capture film 111 are arranged separated from one anotherly.For example, capture film 111 in hydrogen and be set directly at oxide semiconductor
In situation on film 107, remain in oxygen in some cases by some hydrogen that heat treatment discharges from oxide semiconductor film 107
Interface between compound semiconductor film 107 and hydrogen capture film 111, and film 111 is not captured by hydrogen and capture.However, when hydrogen infiltration
When film 109 is arranged between oxide semiconductor film 107 and hydrogen capture film 111, by heat treatment from oxide semiconductor film 107
The hydrogen of release is transferred to hydrogen capture film 111, without remaining in oxide semiconductor film 107, and therefore oxide half
Hydrogen concentration in electrically conductive film 107 can fully reduce.
Oxide semiconductor film 107 is directly formed in the situation that hydrogen captures film 111, hydrogen remains in oxide semiconductor
Film 107 and hydrogen capture the interface between film 111, and hydrogen is used as alms giver, and it leads to the cut-off state of transistor 100 completing
The increase of electric current.Oxide semiconductor film 107 and hydrogen capture film 111 between setting hydrogen-permeable membrane 109 make will be from oxide
The hydrogen migration of semiconductor film 107 release captures film 111 to hydrogen and remains in without hydrogen that become in oxide semiconductor film 107 can
Energy.Additionally, the hydrogen-permeable membrane 109 (it will become channel protection film 121 in step afterwards) that setting has insulating property (properties) makes
The increase that the OFF-state current of transistor 100 completing must be suppressed is possibly realized.
The temperature of heat treatment is higher than 450 DEG C and the strain point less than substrate 101, preferably greater than or equal to 500 DEG C and be less than
The strain point of substrate 101, more preferably greater than or equal to 550 DEG C and the strain point less than substrate 101.With the rising of temperature, from
The amount of the hydrogen of oxide semiconductor film 107 release also increases.Additionally, with the oxide semiconductor film being formed on the substrate 101
The reduction of 107 thickness, temperature can reduce.
There is no specific restriction to the annealing device for heat treatment, and this device can be provided with for by from all
As the heat radiation of the heating element heater of stratie or conduction of heat to heat the equipment of pending object.For example, can be using electricity
The rapid thermal annealing of stove or such as gas rapid thermal annealing (GRTA) device or lamp rapid thermal annealing (LRTA) device etc
(RTA) device.LRTA device be for by from such as Halogen light, metal halide lamp, xenon arc lamp, carbon arc lamp, high-pressure mercury lamp or
The device to heat pending object for the radiation of the light (electromagnetic wave) of lamp transmitting of high voltage mercury lamp etc.GRTA device is for making
Carry out heat-treating apparatus with high-temperature gas.
The hydrogen concentration of the oxide semiconductor film 113 being formed by heat treatment is less than 1 × 1019cm-3, preferably shorter than or wait
In 5 × 1018cm-3.It should be noted that the hydrogen concentration in oxide semiconductor film 113 is the value that available SIMS quantifies.In oxide half
In electrically conductive film 113, the amount of the hydrogen as alms giver reduces, and suppresses the generation of the electronics as carrier；Therefore oxide half
Electrically conductive film 113 has good characteristic of semiconductor.
Because silicon oxide film or oxygen silicon nitride membrane are used as hydrogen-permeable membrane 109, therefore pass through heat treatment, oxygen from silicon oxide film or
Oxygen silicon nitride membrane is supplied to oxide semiconductor film 113, thus reducing oxygen defect.Additionally, in the present embodiment, as by adding
The oxygen excess silicon oxide film that heat discharges the example of the film of oxygen is used as gate insulating film 105, thus also by heat treatment from oxygen excess
Silicon oxide film supplies oxygen, is consequently formed the oxide semiconductor film 113 that its oxygen defect is reduced.
In oxide semiconductor film 113, reduce hydrogen concentration and oxygen defect by heat treatment；Therefore partly lead in oxide
The generation as the electronics of carrier for the suppression in body film 113.Therefore, in the transistor 100 including oxide semiconductor film 113
The negative offset of suppression threshold voltage, is derived from the transistor that its normal on state characteristic is suppressed.
Additionally, can be reduced by heat treatment interface energy level between gate insulating film 105 and oxide semiconductor film 113 with
And the interface energy level between oxide semiconductor film 113 and hydrogen-permeable membrane 117.In such transistor 100 manufacturing, can prevent
It is captured in each interface according to the electric charge that operation generates.In this way, transistor 100 can be that to have less electrical characteristics bad
The transistor changed.
It is that its hydrogen concentration is lowered in oxide semiconductor film 113 (being oxide semiconductor film 107 before the heat treatment)
The situation of CAAC-OS film in, the channel formation region (oxide semiconductor film being formed afterwards in the transistor 100 completing
115) the CAAC-OS film being lowered by its hydrogen concentration is formed.Thus, transistor 100 can be the height with stable electrical characteristics
Reliable transistor, wherein before light (visible ray or ultraviolet light) irradiation and afterwards between and in grid bias-temperature
(BT), between before stress test and afterwards, the skew of threshold voltage is less.
In oxide semiconductor film 113, hydrogen concentration fully reduces (highly purified), and by heat treatment supply enough
Oxygen, reduce the defect level in the band gap that caused by oxygen defect.As a result, reduce the crystal including oxide semiconductor film 113
The OFF-state current of pipe 100.Specifically, the OFF-state current under room temperature (25 DEG C) (herein for channel length be 3 μm and
Channel width is the value of 1 μm of transistor) for 100zA, (1zA (narrow general support (zepto) ampere) is 1 × 10-21A) or following, excellent
Select 10zA or following.Because the alkali metal of such as Li or Na is impurity, it is advantageous to reducing the alkali-metal amount entering transistor.
Alkali-metal concentration in oxide semiconductor film 113 (oxide semiconductor film 115 being formed afterwards) be less than or equal to 2 ×
1016cm-3, preferably lower than or equal to 1 × 1015cm-3.Additionally, the content of alkaline-earth metal is preferably relatively low, because alkaline-earth metal is also
Impurity.
Etching mask is formed at hydrogen by photoetching process and captures on film 111, and using Etching mask by oxide
Semiconductor film 113, hydrogen-permeable membrane 109 and hydrogen capture film 111 be etched into required form, thus formed oxide semiconductor film 115,
Hydrogen-permeable membrane 117 and hydrogen capture film 119.It should be noted that the scope of the hydrogen concentration in oxide semiconductor film 115 is oxide partly leading
The scope of the hydrogen concentration in body film 113.It should be noted that Etching mask both can pass through photoetching process, ink-jet method, printing also can be passed through
Method etc. is properly formed.For etching, wet etching or dry etching can be adopted, and preferably be carried out etching so that oxide half
The end that electrically conductive film 115, hydrogen-permeable membrane 117 and hydrogen capture film 119 each has cone angle.Using oxide semiconductor film 115, hydrogen
The cone angle of the end of permeable membrane 117 and hydrogen capture film 119, in the manufacturing process of transistor 100, after can improving this etching step
The coverage rate of the film being formed, and can correspondingly prevent the discontinuous of film.In the situation of execution dry etching, can be by making to resist
Erosion agent mask executes etching to form cone angle while retrogressing.
As in the dry etching capturing film 119 for forming oxide semiconductor film 115, hydrogen-permeable membrane 117 and hydrogen
Etching gas, preferably uses chlorine-containing gas (chlorine-based gas, such as chlorine (Cl2), boron chloride (BCl3), Silicon chloride. (SiCl4)
Or carbon tetrachloride (CCl4)).
Or, can be using fluoro-gas (fluorine base gas, such as carbon tetrafluoride (CF4), sulfur hexafluoride (SF6), Nitrogen trifluoride
(NF3) or fluoroform (CHF3)).
As for the etching in this step, due to the oxide semiconductor film 113 in state before etching and gate insulating film 105
Composition material is different from each other, and therefore their etch-rate is also different from each other.Therefore, using oxide semiconductor film 113 relatively
In the high etch-selectivity of gate insulating film 105 condition and in view of the terminal in oxide semiconductor film 113, form oxide
Semiconductor film 115, hydrogen-permeable membrane 117 and hydrogen capture film 119.It should be noted that the structure being obtained by step so far is in fig. 2 c
Illustrate.
Then, Etching mask is formed at hydrogen by photoetching process and captures on film 119, and using Etching mask execution
Etching is to form required form, so that the hydrogen of channel protection film 121 and the size acquisition capturing film 119 by reduction hydrogen captures film
123 are formed on oxide semiconductor film 115.It should be noted that channel protection film 121 by with hydrogen-permeable membrane 117 identical material structure
Become.Etching mask both can pass through photoetching process, also can be properly formed by ink-jet method, print process etc..Etching can be dry
Method etching or wet etching, and preferably be carried out etching so that the end that channel protection film 121 and hydrogen capture film 123 has cone
Angle.The formation of the cone angle of end of channel protection film 121 and hydrogen capture film 123 leads to should in the manufacturing process of transistor 100
In subsequent step after step, the coverage rate of film of formation improves and prevents the discontinuous of film.In the situation using dry etching
In, can be by making Etching mask reduced size of execution simultaneously etching obtain cone angle.
In the situation forming channel protection film 121 and hydrogen capture film 123 by dry etching, as mentioned above can use example
As chlorine-containing gas or fluoro-gas.
Composition due to the oxide semiconductor film 115 in the state before etching in this step and hydrogen-permeable membrane 117
Material is different from each other, and therefore their etch-rate is also different from each other.Therefore, using hydrogen-permeable membrane 117 with respect to oxide half
The condition of the high etch-selectivity of electrically conductive film 115 in view of the terminal in oxide semiconductor film 117, forms channel protection film
121 and hydrogen capture film 123.It should be noted that being illustrated in figure 2d by the structure that step so far obtains.
Then, there is single layer structure or the conducting film 125 of stepped construction is formed at gate insulating film 105, oxide semiconductor
On film 115, channel protection film 121 and hydrogen capture film 123 (referring to Fig. 3 A).The conductive material being applied to gate electrode 103 is used for leading
Electrolemma 125.
Etching mask is formed on conducting film 125 by photoetching process.Using Etching mask, conducting film 125 is etched
Become required form, thus forming source electrode 125a and drain electrode 125b.
After forming source electrode and drain electrode 125a and 125b, it is possible with Etching mask etching a part of hydrogen capture
Film 123 is to form detached hydrogen capture film 123a and 123b.In this case, a part of channel protection film is exposed by etching
121.It should be noted that hydrogen capture film 123a and 123b can have conduction property.In this case, hydrogen capture film 123a and hydrogen capture
Film 123b can be considered a part for source electrode 125a and a part of drain electrode 125b.
Because the composition material of hydrogen capture film 123 and channel protection film 121 is different from each other, therefore their etch-rate
Different from each other.Therefore, capture the condition of the high etch-selectivity with respect to channel protection film 121 for the film 123 using hydrogen and consider
Hydrogen captures the terminal in film 123, forms hydrogen capture film 123a and 123b.
Setting channel protection film 121 can prevent oxide semiconductor film 115 formed source electrode and drain electrode 125a and
It is etched during 125b and hydrogen capture film 123a and 123b.Therefore, because the oxygen in the channel formation region as transistor 100
There is not the defect being caused by etching, therefore transistor 100 has good electrical characteristics in compound semiconductor film 115.
It should be noted that for forming source electrode and the Etching mask of drain electrode 125a and 125b both can pass through photoetching process,
Also can be properly formed by ink-jet method, print process etc..Etching for forming source electrode and drain electrode 125a and 125b is permissible
It is dry etching or wet etching.It preferably is carried out etching so that the end of source electrode and drain electrode 125a and 125b each has cone
Angle.This is because using the source electrode with cone angle and drain electrode, after this step in the manufacturing process of transistor 100 can be improved
The coverage rate of the film being formed in subsequent step, and the discontinuous of film can be prevented.In the situation using dry etching, can pass through
Etching mask reduced size of execution simultaneously etching is made to obtain cone angle.
Source electrode and drain electrode 125a and 125b are also respectively provided with source wiring and the function of drain electrode wiring.May depend on use
Resistance and manufacture in the conductive material (or the conductive material for conducting film 125) of source electrode and drain electrode 125a and 125b
The period of step suitably determines source electrode 125a and the thickness of drain electrode 125b.For example, source electrode 125a and drain electrode
The thickness of 125b more than or equal to 10nm and can be less than or equal to 500nm.The structure being obtained by step so far is in figure 3b
Illustrate.
By above-mentioned steps, transistor 100 can be manufactured.
As shown in Figure 3 C, protection dielectric film 127 may be provided at channel protection film 121, detached hydrogen capture film 123a and
On 123b and source electrode and drain electrode 125a and 125b.Protection dielectric film 127 can use oxygen by sputtering method, CVD etc.
SiClx film, oxygen silicon nitride membrane, silicon oxynitride film or silicon nitride film are formed.Now it is preferred that unlikely being released by heating
The material putting oxygen is used for protecting dielectric film 127.This is used for preventing the reduction of the electrical conductivity of oxide semiconductor film 115.Concrete and
Speech, protection dielectric film 127 as main material and can be selected from nitrogen oxide gas, nitrogen by the use of including silane gas by CVD
The mixture of the suitable source gas of gas, hydrogen and rare gas is formed.Underlayer temperature can be set higher than or be equal to 300 DEG C and less than or
Equal to 550 DEG C.By CVD method, the film unlikely passing through heating release oxygen can be formed.
In addition to above-mentioned heat treatment, another heat treatment can be carried out.That is, heat treatment can perform repeatedly being used for manufacturing crystalline substance
Body pipe 100.Second or heat treatment afterwards in oxidizing atmosphere or inert atmosphere greater than or equal to 150 DEG C and less than substrate
Execute at a temperature of strain point, preferable temperature is greater than or equal to 250 DEG C and is less than or equal to 450 DEG C, more preferably greater than or equal to
300 DEG C and be less than or equal to 450 DEG C.Herein, oxidizing atmosphere refers to the oxidizing gas of 10ppm or higher (as oxygen, ozone
Or nitrogen oxide) atmosphere.Inert atmosphere refers to the oxidizing gas less than 10ppm and is filled with the gas of nitrogen or rare gas
Atmosphere.Process time is 3 minutes to 24 hours.The heat treatment being longer than 24 hours is not preferred, because reducing productivity ratio.Note
Meaning, second or the sequential of heat treatment afterwards do not limit, as long as second or heat treatment afterwards for forming oxide semiconductor
Execute after the heat treatment of film 113.
Hydrogen concentration in the situation executing multiple heat treatment, in the oxide semiconductor film 115 of the transistor 100 completing
Can reduce further.Additionally, the oxygen defect in oxide semiconductor film 115, gate insulating film 105 and oxide semiconductor can be reduced
Interface energy level between interface energy level between film 115, oxide semiconductor film 115 and channel protection film 121.Therefore, crystal
Pipe 100 can be the highly reliable transistor with stable electrical characteristics.
It should be noted that the heat-treating apparatus being applied to formation oxide semiconductor film 113 can be used for second or heat afterwards
Process.
When forming that to have well electricity special by forming the heat treatment of oxide semiconductor film 113 and can fully reduce hydrogen concentration
The transistor 100 of property, and when can fully reduce the defect level in the band gap being caused by oxygen defect, can skip second or afterwards
Heat treatment.
Opening can be formed as needed to expose gate electrode 103 and source in gate insulating film 105 and protection dielectric film 127
Electrode and drain electrode 125a and 125b.
In the above described manner, the hydrogen in oxide semiconductor film is discharged by heat treatment, and hydrogen is shifted by hydrogen-permeable membrane
Capture film to hydrogen, thus can manufacture the transistor with good electrical.
It should be noted that structure described in this embodiment can with any described in other embodiments in this specification or example
Structure uses appropriately combinedly.
(embodiment 2)
In the present embodiment, the transistor different from the structure division of transistor 100 in embodiment 1 by describing its structure
200.Specifically, the shape being different only in that hydrogen capture film of transistor 200 and transistor 100；Therefore in some cases
Reference for describing transistor 200 is identical with for describing the reference of transistor 100.Additionally, transistor 200 is
One modified example of transistor 100, thus the description in embodiment 1 can be applicable to the present embodiment.
Fig. 4 A is the top view of transistor 200.Fig. 4 B is the sectional view being taken along the chain-dotted line C-D in Fig. 4 A.
Transistor 200 includes the gate electrode 103 on substrate 101, the gate insulating film 105 of covering grid electrode 103, gate insulating film
Oxide semiconductor film 215 on 105, the channel protection film 121 being formed by hydrogen-permeable membrane on oxide semiconductor film 215,
The hydrogen capture film 123a contacting with partial oxide semiconductor film 215, part channel protection film 121 and part gate insulating film 105
And source electrode 125a on 123b, and hydrogen capture film 123a and 123b and drain electrode 125b.It should be noted that for the sake of clarity,
Not shown gate insulating film 105 in Figure 4 A.The end of hydrogen capture film 123a and 123b has cone angle in figure 4b, but in order to clear
Chu Qijian, the cone angle of not shown hydrogen capture film 123a and 123b in Figure 4 A.In transistor according to an embodiment of the invention
In, in addition to the channel protection film being formed on channel formation region, dielectric film may be formed on channel protection film to cover oxidation
The end of thing semiconductor film.
Transistor 200 has bottom grating structure, and wherein gate electrode 103 is arranged on the substrate 101.Additionally, transistor 200 has
Top contact structure, wherein source electrode and drain electrode 125a and 125b are disposed in contact with the top surface of oxide semiconductor film 115
A part.
In transistor 200, hydrogen captures the shape of film 123a and 123b and the shape of source electrode and drain electrode 125a and 125b
Shape is identical, and this is different from transistor 100.
Equally in transistor 200, hydrogen capture film 123a and 123b utilizes phase with source electrode and drain electrode 125a and 125b
Same Etching mask is formed simultaneously, thus hydrogen capture film 123a and 123b is disposed separately.
As in the description of transistor 100, in transistor 200, the width W_OS of oxide semiconductor film 115 can be little
Width W_GE in gate electrode 103.This structure can prevent from being exposed to the light entering from the rear surface of substrate 101 (as visible ray
And ultraviolet light)；Therefore, the deterioration of the electrical characteristics being caused by the irradiation of light can be reduced in the transistor 200 completing.It should be noted that
As the example of the electrical characteristics deterioration being caused by the irradiation of light, provide the negative offset of threshold voltage and the increasing of OFF-state current
Plus.
Oxide semiconductor film 215 is used as the channel formation region of transistor 200.Channel protection film 121 is arranged on oxide
On semiconductor film 215, so that the channel length of transistor 200 corresponds to the width W_CS of channel protection film 121.Setting raceway groove is protected
Cuticula 121 can prevent oxide semiconductor film 215 to be etched during forming source electrode and drain electrode 125a and 125b.Therefore,
The defect that this etching causes can be suppressed；Therefore, the transistor 200 completing can have good electrical characteristics.
The method manufacturing transistor 200 below with reference to Fig. 5 A to 5D and Fig. 6 A to 6E description.
As in Example 1, gate electrode 103, gate insulating film 105 and oxide semiconductor film 107 are formed at substrate 101
On.
As for for the material of substrate 101, gate electrode 103 and oxide semiconductor film 107, thickness and method, refer to
Embodiment 1.It should be noted that being illustrated in fig. 5 by the structure that step so far obtains.
The oxynitride film containing In that the same hydrogen that in transistor 200, can be applicable to describe afterwards captures film 111 can be formed
Between gate electrode 103 and gate insulating film 105.Therefore, transistor 200 can obtain the effect described in the explanation of transistor 100
Really.
Then, the hydrogen-permeable membrane 109 being processed into channel protection film 121 is formed on oxide semiconductor film 107 (figure
5B).As for for the material of hydrogen-permeable membrane 109, thickness and method, refer to embodiment 1.
The channel protection film 121 being formed by processing hydrogen-permeable membrane 109 has holding in the technique manufacturing transistor 200
The clean function in channel formation region at least in the oxide semiconductor film surface of oxide semiconductor film (especially).Concrete and
Speech, because in the technique manufacturing transistor 200, hydrogen-permeable membrane 109 is arranged on oxide semiconductor film 107, therefore can prevent
The defect of the organic substance being caused by the dry etching of execution in subsequent fabrication steps after this step and pollution.As a result, complete
The transistor 200 becoming can have good electrical characteristics.
In the same technique in manufacture transistor 200, oxide semiconductor film 107 oxygen defect (Lacking oxygen) occurs.
As described in example 1 above, part Lacking oxygen is used as alms giver, and it leads to generating and leading to oxide half of the electronics as carrier
The increase of the electrical conductivity of electrically conductive film 107.Therefore, the characteristic of semiconductor deterioration of the oxide semiconductor film 107 being formed.
Therefore, as in Example 1, the film containing oxide is used for hydrogen-permeable membrane 109, from there through execute afterwards
Heat treatment, can go dehydrogenation from oxide semiconductor film 107 and oxygen can be supplied to oxide semiconductor film 107.By to oxygen
Compound semiconductor film 107 supplies oxygen, can reduce the oxygen defect in oxide semiconductor film 107 and correspondingly suppress to be used as carrier
Electronics generation.Specifically, silicon oxide film or oxygen silicon nitride membrane can be used as oxidiferous film.
Gate insulating film 105, oxide semiconductor film 107 and hydrogen-permeable membrane 109 can be formed continuously in a vacuum.For example, exist
Removed by heat treatment or corona treatment the inclusion hydrogen being attached on substrate 101 and the surface of gate electrode 103 impurity it
Afterwards, gate insulating film 105 can be formed and be not exposed to air, and also oxide semiconductor film 107 and hydrogen infiltration can be formed continuously
Film 109 and be not exposed to air.Formed by above-mentioned continuous film, the surface being attached to substrate 101 and gate electrode 103 can be reduced
On inclusion hydrogen impurity.Additionally, oozing in substrate 101, gate electrode 103, gate insulating film 105, oxide semiconductor film 107 and hydrogen
In the lamination of permeable membrane 109, Atmospheric components can be prevented to be attached to each interface between all layers.As a result, can effectively make by it
The hydrogen that the heat treatment executing afterwards discharges from oxide semiconductor film 107 spreads (infiltration) and is captured.Additionally, the transistor completing
200 can have good electrical characteristics.
Etching mask is formed on hydrogen-permeable membrane 109 by photoetching process, and using Etching mask by oxide
Semiconductor film 107 and hydrogen-permeable membrane 109 are etched into required form, thus forming oxide semiconductor film 207 and hydrogen-permeable membrane
117.It should be noted that Etching mask both can pass through photoetching process, also can be properly formed by ink-jet method, print process etc..For
Etching, can adopt wet etching or dry etching, and preferably is carried out etching so that oxide semiconductor film 207 and hydrogen-permeable membrane
117 end each has cone angle.Using the cone angle of oxide semiconductor film 207 and the end of hydrogen-permeable membrane 117, in transistor
In 200 manufacturing process, the coverage rate of the film being formed after can improving this etching step, and can correspondingly prevent the discontinuous of film.
In the situation of execution dry etching, cone angle can be formed by execution etching while making Etching mask retreat.
In the technique manufacturing transistor 100, execute heat treatment to discharge the hydrogen in oxide semiconductor film 107, then
Execute etching.On the other hand, in the technique manufacturing transistor 200, it is etched in and oxide semiconductor film is discharged by heat treatment
Execute before hydrogen in 107.Therefore, the hydrogen concentration in the oxide semiconductor film 207 after this etching and oxide semiconductor film
Hydrogen concentration in 107 is phase same level.
For example, the chloride or fluoro-gas being given in embodiment 1 can ooze for forming oxide semiconductor film 207 and hydrogen
Use in the dry etching of permeable membrane 117.
As for the etching in this step, due to the oxide semiconductor film 107 in state before etching and gate insulating film 105
Composition material is different from each other, and therefore their etch-rate is also different from each other.Therefore, using oxide semiconductor film 107 relatively
In the high etch-selectivity of gate insulating film 105 condition and in view of the terminal in oxide semiconductor film 107, form oxide
Semiconductor film 207 and hydrogen-permeable membrane 117.It should be noted that being illustrated in figure 5 c by the structure that step so far obtains.
Then, Etching mask is formed on hydrogen-permeable membrane 117 by photoetching process, and using Etching mask by hydrogen
Permeable membrane 117 is etched into required form, so that channel protection film 121 may be formed on oxide semiconductor film 207.It should be noted that
Channel protection film 121 is formed using with hydrogen-permeable membrane 117 identical material.For etching, can be using wet etching or dry method erosion
Carve, and preferably be carried out etching so that the end of channel protection film 121 has cone angle.End using channel protection film 121
Cone angle, in the manufacturing process of transistor 200, the coverage rate of the film being formed after can improving this etching step, and can correspondingly prevent
Only film is discontinuous.In the situation of execution dry etching, can be come by execution etching while making Etching mask retreat
Form cone angle.
For example, above-mentioned chloride or fluoro-gas can be used as forming the erosion used in the dry etching of channel protection film 121
Carve gas.
Group due to oxide semiconductor film 207 and hydrogen-permeable membrane 117 in the state before etching in this step is become a useful person
Material is different from each other, and therefore their etch-rate is also different from each other.Therefore, partly led with respect to oxide using hydrogen-permeable membrane 117
The condition of the high etch-selectivity of body film 207 in view of the terminal in oxide semiconductor film 117, forms channel protection film
121.It should be noted that being illustrated in figure 5d by the structure that step so far obtains.
Then, hydrogen capture film 111 is formed on gate insulating film 105, oxide semiconductor film 207 and channel protection film 121.
As for the material, thickness and the method that capture film 111 for hydrogen, refer to embodiment 1.Hydrogen capture film 111 has capture and passes through it
The heat treatment executing afterwards discharges and diffuses into (passing through) channel protection film 121 from oxide semiconductor film 207 and (also serves as hydrogen infiltration
Film) hydrogen function.There is no specific restriction to the film being applied to hydrogen capture film 111, as long as this film has above-mentioned functions, and
And such as conducting film, dielectric film or semiconductor film can be used.It should be noted that being shown in fig. 6 by the structure that step so far obtains
Go out.
The hydrogen capture film 111 of transistor 200 includes capture and discharges from oxide semiconductor film 207 and pass through channel protection film
The region of 121 hydrogen, and capture discharges from oxide semiconductor film 207 and do not pass through the region of the hydrogen of channel protection film 121.
Then, heat treatment is executed to the structure obtaining by step so far.By executing heat treatment, oxide semiconductor
The hydrogen that film 207 includes is releasable.The hydrogen infiltration channel protection film 121 of release is simultaneously captured by hydrogen capture film 111.In other words,
By executing heat treatment, the hydrogen that oxide semiconductor film 207 includes is transferred to hydrogen capture film 111.Therefore, at by heat
Reason, forms the highly purified oxide semiconductor film 215 that wherein hydrogen concentration reduces.Existed by the structure that step so far obtains
Shown in Fig. 6 B.
Additionally, channel protection film 121 is formed between oxide semiconductor film 207 and hydrogen capture film 111, by this oxide
Semiconductor film 207 and hydrogen capture film 111 are arranged separated from one anotherly.For example, it is set directly at oxide in hydrogen capture film 111 partly to lead
In situation on body film 207, remained in some cases by some hydrogen that heat treatment discharges from oxide semiconductor film 207
Interface between oxide semiconductor film 207 and hydrogen capture film 111, and film 111 is not captured by hydrogen and capture.However, working as raceway groove
When protecting film 121 is arranged between oxide semiconductor film 207 and hydrogen capture film 111, by heat treatment from oxide semiconductor
The hydrogen of film 207 release is transferred to hydrogen capture film 111, without remaining in oxide semiconductor film 207, and therefore aoxidizes
Hydrogen concentration in thing semiconductor film 207 can fully reduce.
Oxide semiconductor film 207 is directly formed in the situation that hydrogen captures film 111, hydrogen remains in oxide semiconductor
Film 207 and hydrogen capture the interface between film 111, and hydrogen is used as alms giver, and it leads to the cut-off state of transistor 100 completing
Electric current increases.Oxide semiconductor film 207 and hydrogen capture film 111 between setting channel protection film 121 make will be from oxide
The hydrogen migration of semiconductor film 207 release captures film 111 to hydrogen and does not end up in oxide semiconductor film 207 (especially in raceway groove
Formed in area) it is possibly realized.Additionally, setting has the channel protection film 121 of insulating property (properties) so that suppressing the transistor 200 completing
The increase of OFF-state current be possibly realized.
For the temperature adopting in heat treatment and heater, refer to embodiment 1.
{0>The hydrogen concentration of the oxide semiconductor film 215
(particularly the channel formation region)formed by the heat treatment is
lower than 1×1019cm-3, preferably lower than or equal to 5 × 1018cm-3.<}88{>By heat
The hydrogen concentration of the oxide semiconductor film 215 (especially channel formation region) that process is formed is less than 1 × 1019cm-3, preferably shorter than
Or it is equal to 5 × 1018cm-3.<0}{0>Note that the hydrogen concentration in the oxide
semiconductor film 215is a value that can be quantified by SIMS.<}100{>It should be noted that
Hydrogen concentration in oxide semiconductor film 215 is the value that available SIMS quantifies.<0}{0>In the oxide semiconductor
Film 215, the amount of hydrogen serving as a donor is reduced, and generation
of electrons serving as a carrier is suppressed；thus the oxide semiconductor
film 215has favorable semiconductor characteristics.<}100{>In oxide semiconductor film 215
In, the amount of the hydrogen as alms giver reduces, and suppresses the generation of the electronics as carrier；Therefore oxide semiconductor film 215
There is good characteristic of semiconductor.<0}
Because silicon oxide film or oxygen silicon nitride membrane are used as channel protection film 121, therefore pass through heat treatment, oxygen is from silicon oxide film
Or oxygen silicon nitride membrane (channel protection film 121) supplies to oxide semiconductor film 215, thus reducing oxygen defect.Additionally, equally existing
In the present embodiment, the oxygen excess silicon oxide film as the example of the film by heating release oxygen is used as gate insulating film 105, thus
Supply oxygen by heat treatment from oxygen excess silicon oxide film, be consequently formed the oxide semiconductor film 215 that its oxygen defect is reduced.
In oxide semiconductor film 215, reduce hydrogen concentration and oxygen defect by heat treatment；Therefore partly lead in oxide
The generation as the electronics of carrier for the suppression in body film 215.Therefore, in the transistor 200 including oxide semiconductor film 215
The negative offset of suppression threshold voltage, is derived from the transistor that its normal on state characteristic is suppressed.
Additionally, can be reduced by heat treatment interface energy level between gate insulating film 105 and oxide semiconductor film 215 with
And the interface energy level between oxide semiconductor film 215 and channel protection film 121.In such transistor 200 manufacturing, can prevent
Only it is captured in each interface according to the electric charge that operation generates.In this way, transistor 200 can be to have less electrical characteristics
The transistor of deterioration.
Similar to embodiment 1, the oxide semiconductor film 215 in the channel formation region as the transistor 200 completing is
In the situation of CAAC-OS film that its hydrogen concentration reduces, transistor 200 can be the highly reliable crystal with stable electrical characteristics
Pipe, wherein light (visible ray or ultraviolet light) irradiation before and afterwards between and in grid bias-temperature (BT) stress test
Between before and afterwards, the skew of threshold voltage is less.It should be noted that the scope of hydrogen concentration in oxide semiconductor film 215 with
Identical in oxide semiconductor film 115 described in embodiment 1.
In oxide semiconductor film 215, hydrogen concentration fully reduces (highly purified), and by heat treatment supply enough
Oxygen, reduce the defect level in the energy gap that caused by oxygen defect.As a result, reduce the crystal including oxide semiconductor film 215
The OFF-state current of pipe 200.Specifically, the OFF-state current under room temperature (25 DEG C) (herein for channel length be 3 μm and
Channel width is the value of 1 μm of transistor) for 100zA, (1zA (narrow general support ampere) is 1 × 10-21A) or following, preferably 10zA or
Below.Because the alkali metal of such as Li or Na is impurity, it is advantageous to reducing the alkali-metal amount entering transistor.Oxide half
Alkali-metal concentration in electrically conductive film 215 is less than or equal to 2 × 1016cm-3, preferably lower than or equal to 1 × 1015cm-3.Additionally, alkali
The content of earth metal is preferably relatively low, because alkaline-earth metal is also impurity.
Then, there is single layer structure or the conducting film 125 of laminated construction is formed on hydrogen capture film 111 (referring to Fig. 6 C).
The conductive material being applied to the gate electrode 103 described in embodiment 1 is used for conducting film 125.
Etching mask is formed on conducting film 125 by photoetching process.Using Etching mask, conducting film 125 is etched
Become required form, thus forming source electrode 125a and drain electrode 125b.After forming source electrode and drain electrode 125a and 125b,
It is possible with Etching mask etching a part of hydrogen capture film 111 to form detached hydrogen capture film 123a and 123b.This
In the case of, a part of channel protection film 121 is exposed by etching.It should be noted that hydrogen capture film 123a and 123b can have electric conductivity
Matter.In this case, hydrogen captures film 123a and hydrogen captures a part and the drain electrode that film 123b can be considered source electrode 125a
A part of 125b.
Because the composition material of hydrogen capture film 111 and channel protection film 121 is different from each other, therefore their etch-rate
Different from each other.Therefore, capture the condition of the high etch-selectivity with respect to channel protection film 121 for the film 111 using hydrogen and consider
Hydrogen captures the terminal in film 111, forms hydrogen capture film 123a and 123b.
Setting channel protection film 121 can prevent oxide semiconductor film 215 formed source electrode and drain electrode 125a and
It is etched during 125b and hydrogen capture film 123a and 123b.Therefore, because the oxygen in the channel formation region as transistor 200
The defect being caused by etching is not produced, therefore transistor 200 has good electrical characteristics in compound semiconductor film 215.
Capture in the situation that film 111 is not high enough to respect to the etching selectivity of oxide semiconductor film 215 in hydrogen, with hydrogen
The partial oxide semiconductor film 215 (four angles of oxide semiconductor film 215 in Fig. 4 A) of capture film 111 contact is in the source that formed
It is possible to disappear during electrode and drain electrode 125a and 125b or hydrogen capture film 123a and 123b, and the oxide of transistor 200
Semiconductor film 215 can retain, as shown in Figure 4 A.In order to form this shape, in the etch-rate considering hydrogen capture film 111 and thickness
The period for etching is adjusted in the case of degree.
In transistor 200, detached hydrogen capture film 123a and 123b and oxide semiconductor film 215 and source electrode and
Drain electrode 125a with 125b contacts.Have greater than or equal to 7 as hydrogen capture film 123a and 123b containing In oxynitride film
Atomic percent and less than or equal to 20 atomic percents (this value quantifies by XPS method) nitrogen concentration and with capture hydrogen
In conjunction with when have in the situation of high conductivity, by oxide semiconductor film 215 and source electrode and drain electrode 125a and 125b
Between setting hydrogen capture film 123a and 123b, the contact resistance between oxide semiconductor film 215 and source electrode 125a and oxygen
Contact resistance between compound semiconductor film 215 and drain electrode 125b can reduce, thus leading to the cut-off state electricity of transistor 200
Stream increases.
The electric field being caused by the negative charge that a part of hydrogen that hydrogen captures film 123a and 123b capture generates, transistor 200
Threshold voltage can positive offset.
Etching mask for forming source electrode and drain electrode 125a and 125b both can pass through photoetching process, also can pass through
Ink-jet method, print process etc. are properly formed.Etching for forming source electrode and drain electrode 125a and 125b can be dry method erosion
Carve or wet etching, and preferably be carried out etching so that the end of source electrode and drain electrode 125a and 125b has cone angle.This is
Because using the source electrode with cone angle and drain electrode 125a and 125b, this step in the manufacturing process of transistor 100 can be improved
The coverage rate of the film being formed in subsequent step afterwards, and the discontinuous of film can be prevented.In the situation using dry etching, can lead to
Cross and make Etching mask reduced size of execution simultaneously etching obtain cone angle.
Source electrode and drain electrode 125a and 125b are also respectively provided with source wiring and the function of drain electrode wiring.Source electrode 125a
With the thickness of drain electrode 125b can with identical in embodiment 1.Illustrated in figure 6d by the structure that step so far obtains.
By above-mentioned steps, transistor 200 can be manufactured.
As transistor 100, in transistor 200, protection dielectric film 127 may be provided at channel protection film 121, divides
From hydrogen capture film 123a and 123b and source electrode and drain electrode 125a and 125b on (referring to Fig. 6 E).For protection insulation
Film 127, refers to embodiment 1.
As in the description of transistor 100, in addition to above-mentioned heat treatment, transistor 200 can be carried out at another heat
Reason.That is, heat treatment can perform repeatedly being used for manufacturing transistor 200.Condition (temperature for second or heat treatment afterwards
Degree, heating atmosphere, process time, heat treatment sequential be used for heat-treating apparatus) with identical in embodiment 1.
Hydrogen concentration in the situation executing multiple heat treatment, in the oxide semiconductor film 215 of the transistor 200 completing
Can reduce further.Additionally, the oxygen defect in oxide semiconductor film 215, gate insulating film 105 and oxide semiconductor can be reduced
Interface energy level between film 215 and the interface energy level between oxide semiconductor film 215 and channel protection film 121.Therefore,
Transistor 200 can be the highly reliable transistor with stable electrical characteristics.
When forming that to have well electricity special by forming the heat treatment of oxide semiconductor film 207 and can fully reduce hydrogen concentration
The transistor 100 of property and when can fully reduce the defect level in the band gap being caused by oxygen defect, can skip second or afterwards
Heat treatment.
Opening can be formed as needed to expose gate electrode 103 and source electricity in gate insulating film 105 and protection dielectric film 127
Pole and drain electrode 125a and 125b.
In the above described manner, the hydrogen in oxide semiconductor film is discharged by heat treatment, and hydrogen is shifted by hydrogen-permeable membrane
Capture film to hydrogen, thus can manufacture the transistor with good electrical.
It should be noted that structure described in this embodiment can with any described in other embodiments in this specification or example
Structure uses appropriately combinedly.
(embodiment 3)
In the present embodiment, liquid crystal display description being manufactured using any transistor described in embodiment 1 and 2
Part.It should be noted that in the present embodiment description wherein one embodiment of the present of invention is applied to the example of liquid crystal display device；So
And the invention is not restricted to the present embodiment.For example, those skilled in the art is it can be readily appreciated that implement one of the present invention
Example is applied to electroluminescent (EL) display device of the example as display device.
Fig. 7 is the circuit diagram of active matrix liquid crystal display device.Liquid crystal display device includes source electrode line SL_1 to SL_a, grid
Polar curve GL_1 to GL_b and multiple pixel 2200.Pixel 2200 each includes transistor 2230, capacitor 2220 and liquid crystal cell
Part 2210.Multiple pixels 2200 with this structure form the pixel portion of liquid crystal display device.It should be noted that in some situations
In, " source electrode line SL " and " gate lines G L " only refers to source electrode line and gate line respectively.
Any transistor described in embodiment 1 and 2 can be used as transistor 2230.Transistor described in embodiment 1 and 2
There are outstanding electrical characteristics, such as high field-effect mobility, thus the display device with high display quality can be obtained.Embodiment 1
With the transistor described in 2, also there is extremely low OFF-state current, thus the display device with low-power consumption can be obtained.
Gate lines G L connects to the grid of transistor 2230, and source electrode line SL connects to the source electrode of transistor 2230, and brilliant
The drain electrode of body pipe 2230 connects to an electrode for capacitors of capacitor 2220 and a pixel electrode of liquid crystal cell 2210.Electricity
Another pixel electrode of another electrode for capacitors of container 2220 and liquid crystal cell 2210 connects to public electrode.It should be noted that it is public
Common electrode can use with gate lines G L identical material be formed at gate lines G L identical layer in.
Additionally, gate lines G L connects to gate driver circuit.Gate driver circuit may include described in embodiment 1 and 2
Any transistor.
Source electrode line SL connects to source electrode drive circuit.Source electrode drive circuit may include any crystalline substance described in embodiment 1 and 2
Body pipe.
It should be noted that gate driver circuit or source electrode drive circuit may be formed on the substrate prepared respectively with both,
And connected using the method that such as glass top chip (COG), wire bonding or belt engage (TAB) automatically.
Because transistor is easily destroyed by electrostatic etc., protection circuit is set therefore preferably in display device.Protection circuit
Preferably use non-linear element to be formed.
Once apply the voltage of the threshold voltage greater than or equal to transistor 2230 to gate lines G L, from source electrode line SL supply
Electric charge as transistor 2230 leakage current flow and in capacitor 2220 accumulate.After a line is charged, in this row
Transistor 2230 end, and stop applying from the voltage of source electrode line Sl；However, necessary voltage can be by capacitor 2220
The electric charge of accumulation retains.Then, start the charging of the capacitor 2220 in next line.In this way, execution is to the first row to b
The charging of row.
In the transistor with less OFF-state current situation as transistor 2230 is used, holding electricity can be extended
The cycle of the voltage of container 2220.By this effect, there is in display the situation of the image (inclusion still image) of few action
In can reduce display rewrite frequencies；Therefore, it is possible for reducing power consumption further.Additionally, the electric capacity of capacitor 2220 can enter one
Step reduces；Therefore, the power consumption of charging can be reduced.
In the above described manner, according to one embodiment of present invention, it is possible to provide there is the liquid crystal of high display quality and low-power consumption
Display device.
(embodiment 4)
In the present embodiment, description is manufactured semiconductor storage unit using any transistor described in embodiment 1 and 2
Example.
The typical case of volatile semiconductor memory part include with select transistor that memory component includes and
The dynamic random access memory (DRAM) of the mode data storage of stored charge and using such as trigger in capacitor
Circuit keeps the static RAM (SRAM) of institute's data storage.
As the typical case of non-volatile memory semiconductor device, there is flash memory, it include transistor grid and
Floating grid between channel formation region by keeping electric charge in floating grid come data storage.
Any transistor described in embodiment 1 and 2 can be applicable to the partly crystalline substance that above-mentioned semiconductor storage unit includes
Body pipe.
First, with reference to Fig. 8 A and 8B, memory element will be described, it is any transistor described in Application Example 1 and 2
Semiconductor storage unit.
Memory element includes bit line BL, wordline WL, sense amplifier SAmp, transistor Tr and capacitor C (referring to Fig. 8 A).
It is known as the OFF-state current of transistor Tr, the voltage that capacitor C keeps is as shown in Figure 8 B in time gradually
Reduce.The voltage charging to V1 from V0 is decreased to the VA as the limit value for reading data 1 in time.This cycle is referred to as keeping
Cycle T _ 1.In the situation of secondary storage, need to execute refreshing in hold period T_1.
Because the OFF-state current of the transistor described in embodiment 1 and 2 is less, if therefore retouched in embodiment 1 and 2
The transistor stated is used as transistor Tr herein, then hold period T_1 can extend.That is, the cycle of refresh operation can prolong
Long.Therefore, power consumption can be reduced.For example, memory element using include highly purified oxide semiconductor film to have cut-off
State current is 1 × 10-21A or following, preferably 1 × 10-24In the situation of A or the formation of following transistor, data can keep number
Day is to many decades without power supply.
In the above described manner, according to one embodiment of present invention, can obtain and there is partly leading of height reliability and low-power consumption
Body memory part.
Then, the non-volatile of any transistor describing described in Application Example 1 and 2 with reference to Fig. 9 A and 9B is partly led
The memory element of body memory part.
Fig. 9 A is the circuit diagram of memory element.Memory element includes transistor Tr_1, the grid connecting to transistor Tr_1
Gate lines G L_1, connect source wiring SL_1 of source electrode to transistor Tr_1, transistor Tr_2, connect to transistor Tr_2
Source wiring SL_2 of source electrode, connect the drain electrode wiring DL_2 of drain electrode to transistor Tr_2, capacitor C, connect to electric capacity
The capacitor of one end of device C connects up CL and connects to the other end of capacitor C, the drain electrode of transistor Tr_1 and transistor
The node N of the grid of Tr_2.
Memory element shown in Fig. 9 A and 9B utilizes the change of the threshold voltage of transistor Tr_2 according to the voltage of node N
Change.For example, Fig. 9 B illustrates that capacitor connects up the voltage V of CLCLWith the leakage current I flowing through transistor Tr_2dsRelation between _ 2.
Herein, the voltage of node N can be adjusted by transistor Tr_1.For example, the voltage of source electrode line SL_1 is set to VDD.This
When, by the voltage of gate lines G L_1 being set higher than or being equal to the threshold voltage vt h of transistor Tr_1 and the electricity of VDD sum
Pressure, the voltage of node N can be set to high (HIGH).On the other hand, the voltage in gate lines G L_1 is set below or is equal to transistor
In the situation of threshold voltage vt h of Tr_1, the voltage of node N can be set to low (LOW).
Therefore, it is available for the VCL-I of N=LOWds_ 2 curves or the V for N=HIGHCL-Ids_ 2 curves.Also
It is to say, as N=LOW, in VCLFor I at 0Vds_ 2 is less；Correspondingly data storage 0.Additionally, as N=HIGH, in VCLFor 0V
Place Ids_ 2 is larger；Correspondingly data storage 1.In this way, can data storage.
OFF-state current due to can make the transistor described in embodiment 1 and 2 is minimum, if therefore embodiment 1 and 2
Described in any transistor be used as transistor Tr_1 herein, the electric charge of accumulation in node N can be suppressed to pass through transistor Tr_1
Source electrode and drain electrode be not intended to leak.Therefore, data can keep longer cycle.Using one embodiment of the present of invention, adjust brilliant
The threshold voltage of body pipe Tr_1, the voltage needed for this enables to write reduces.Therefore, compared with flash memory etc., power consumption can be made relatively
Little.
It should be noted that any transistor described in embodiment 1 and 2 also apply be applicable to transistor Tr_2.
In the above described manner, according to one embodiment of present invention, can obtain have long-term height reliability, low-power consumption and
Highly integrated semiconductor storage unit.
The present embodiment can be appropriately combined with any other embodiment realize.
(embodiment 5)
For at least a portion of CPU (CPU), any crystal described in available embodiment 1 and 2 is tubular
Become this CPU.
Figure 10 A is the block diagram of the concrete structure illustrating CPU.CPU shown in Figure 10 A includes the arithmetic on substrate 1190
Logical block (ALU) 1191, ALU controller 1192, instruction decoder 1193, interrupt control unit 1194, time schedule controller 1195,
Depositor 1196, register controller 1197, EBI 1198, rewritable ROM 1199 and ROM interface 1189.Quasiconductor
Substrate, SOI substrate, glass substrate etc. are used as substrate 1190.ROM 1199 and ROM interface 1189 may be provided at separating chips
On.Obviously, the example that simply wherein structure is simplified of the CPU shown in Figure 10 A, and actual CPU can have depending on application
Various structures.
Input via EBI 1198 to the instruction of CPU and be input to instruction decoder 1193 and be decoded wherein,
Input afterwards to ALU controller 1192, interrupt control unit 1194, register controller 1197 and time schedule controller 1195.
ALU controller 1192, interrupt control unit 1194, register controller 1197 and time schedule controller 1195 are according to being solved
The instruction of code executes various controls.Specifically, ALU controller 1192 generates the signal of the operation for controlling ALU 1191.
When CPU is carrying out program, interrupt control unit 1194 is based on its priority or mask state and judges from outside input/defeated
Go out the interrupt requests of equipment or peripheral circuit and process this request.Register controller 1197 generates the address of depositor 1196,
And according to the state of CPU, data is read/writes depositor 1196 from depositor 1196.
Time schedule controller 1195 generates for controlling ALU1191, ALU controller 1192, instruction decoder 1193, interrupting control
The signal in the time sequential routine of device 1194 processed and register controller 1197.For example, time schedule controller 1195 includes internal clocking life
Grow up to be a useful person, be supplied to foregoing circuit for based on reference clock CLK1 generation internal clock signal CLK2 and by clock signal clk 2.
In CPU shown in Figure 10 A, memory element is arranged in depositor 1196.Any described in embodiment 4 deposits
Storage element can be used as the memory element of setting in depositor 1196.
In CPU shown in Figure 10 A, register controller 1197 selects depositing according to the instruction from ALU 1191
The operation of data is kept in device 1196.That is, register controller 1197 selects data to be included by depositor 1196
Phase reversal element in memory element or capacitor holding.When selecting to keep data by phase reversal element, power supply electricity
The memory element to depositor 1196 for the pressure supply.When selecting to keep data by capacitor, rewriting data enters in capacitor, and
And supply voltage can be stopped to the supply of the memory element in depositor 1196.
Supply the node of high level power supply potential VDD or low level power current potential VSS by sets of memory elements with to it
Between arrange switch element, can stop power supply, as shown in Figure 10 B or Figure 10 C.Electricity shown in Figure 10 B and 10C explained below
Road.
Figure 10 B and 10C each illustrates to be used for the memory circuitry of the transistor of active layer including wherein oxide semiconductor
Structure example, this transistor be used as control to memory element power supply potential supply switch element.
The sets of memory elements that memory device shown in Figure 10 B includes switch element 1141 and includes multiple memory elements 1142
1143.Specifically, as each memory element 1142, can be using the memory element described in embodiment 4.Via switch element
1141 each memory element 1142 including to sets of memory elements 1143 supply high level power supply potential VDD.Additionally, to storage
The current potential of each memory element 1142 suppling signal IN and low level power current potential VSS that element group 1143 includes.
In fig. 1 ob, as switch element 1141, using the quasiconductor (as oxide semiconductor) wherein with broad-band gap
For the transistor of active layer, and the switch of the signal SigA controlling transistor by the gate electrode supplied to transistor.
It should be noted that Figure 10 B illustrates that switch element 1141 only includes the structure of a transistor, but it is not limited in this respect,
Switch element 1141 may include multiple transistors.Include in switch element 1141 each serving as multiple transistors of switch element
In situation, multiple transistors can be connected in parallel to each other, connect or combination in parallel and serial.
Although switch element 1141 controls to each memory element in the sets of memory elements 1143 in Figure 10 B included
The supply of 1142 high level power supply potential VDD, but switch element 1141 can control the supply of low level power current potential VSS.
Figure 10 C illustrates each memory element 1142 wherein including to sets of memory elements 1143 via switch element 1141
The example of the memory device of supply low level power current potential VSS.Each memory element including to sets of memory elements 1143
The supply of 1142 low level power current potential VSS can be controlled by switch element 1141.
When switch element be arranged on sets of memory elements and to its supply power supply potential VDD or power supply potential VSS node it
Between when, even if CPU operation interim stop and the situation that stops of supply of supply voltage in also can keep data；Therefore,
Power consumption can be reduced.For example, when not entering data into the input equipment to such as keyboard as the user of personal computer, the behaviour of CPU
Work can stop, thus power consumption can be reduced.
Although CPU is given as examples, transistor also apply be applicable to such as digital signal processor (DSP), makes by oneself
The adopted LSI or LSI of field programmable gate array (FPGA).
The present embodiment can be appropriately combined with any of above embodiment realize.
(embodiment 6)
Any semiconductor device disclosed in this specification can be applicable to various electronic equipments (inclusion entertainment machine).Electronics sets
Standby example includes monitor, such as digital camera or the number of television set (also referred to as TV or radiotelevisor), computer etc.
The camera of word video camera, DPF, mobile phone handsets (also referred to as mobile phone or mobile telephone equipment), portable game
Play control station, the large scale game machine of portable digital-assistant, audio reproducing system and such as pachinko machine.
Figure 11 A illustrates the example of television set.In television set 9600, display portion 9603 is bonded in shell 9601.
Display portion 9603 displayable image.Additionally, in Figure 11 A, shell 9601 is supported by support 9605.One enforcement of the present invention
Example can be applicable to display portion 9603.Using one embodiment of the present of invention, even if when the size of display portion 9603 increases,
Also enable the television set with low-power consumption
The Operation switch of available shell 9601 or independent remote control 9610 operation television set 9600.Available remote control
9610 operated key 9609 controls channel and volume, thus controlling the image of display in display portion 9603.Additionally, remote control
9610 display portions 9607 that can be provided with the data for display from remote control 9610 output.
Note, television set 9600 is provided with receptor, modem etc..Using this receptor, general electricity can be received
Depending on broadcast.Additionally, when television set 9600 is connected to communication network via modem by wired or wireless connection, can
Realize unidirectional (from emitter to receptor) or two-way (between emitter and receptor or between receptor) data communication.
Figure 11 B illustrates the example of DPF.For example, in DPF 9700, display portion 9703 is bonded to outer
In shell 9701.One embodiment of the present of invention can be applicable to display portion 9703.Using one embodiment of the present of invention, even if
When the size of display portion 9703 increases, also enable the DPF with low-power consumption.Display portion 9703 can show various
Image.For example, display portion 9703 can show the effect to play common photo frame of the data of the image with shootings such as digital cameras.
It should be noted that DPF 9700 is provided with operation part, external connection part (USB terminal, may be connected to such as
Terminal of various cables of USB cable etc etc.), recording medium insertion section grades.Although these assemblies may be placed at setting
Have on the surface of display portion, but preferably, for the design of DPF 9700, they are arranged on side or rear.Example
As, the memorizer of the data of image that storage digital camera shoots is inserted in the recording medium insertion portion of DPF,
Thereby view data can be transmitted and is shown in display portion 9703.
DPF 9700 can be configured to wirelessly send and receive data.Can figure needed for using wherein wirelessly transmitting
As data is with the structure shown in carrying out.
The present embodiment can be appropriately combined with any of above embodiment realize.
[example 1]
In this example, by the evaluation of hydrogen concentration in the formation of description oxide semiconductor film and oxide semiconductor film
Result.It should be noted that in this example, oxide semiconductor film is referred to as sample A.
First, method description being used for forming sample A.
Preparation quartz substrate, and by sputtering method, the thick oxide semiconductor film of 300nm is formed in quartz substrate.
In this example, form IGZO film as oxide semiconductor film.The condition forming IGZO film is as follows：By the argon of 30sccm and
The oxygen supply of 15sccm to sputter equipment reaction chamber；Pressure in reaction chamber is set to 0.4Pa；Electrical power is set to
0.5kW；Underlayer temperature is set to 200 DEG C；And compare In using having component2O3∶Ga2O3: the target of ZnO=1: 1: 2 (mol ratios).
It should be noted that the IGZO film being formed with this understanding is CAAC film.
Then, by sputtering method, silicon oxide film thick for the 5nm as hydrogen-permeable membrane is formed on oxide semiconductor film.
The condition forming silicon oxide film is as follows：Reaction chamber by the oxygen supply of the argon of 25sccm and 25sccm to sputter equipment；
Pressure in reaction chamber is set to 0.4Pa；Electrical power is set to 1.0kW；Underlayer temperature is set to 100 DEG C；Using SiO2Target.
Then, by sputtering method, oxynitride film thick for the 300nm capturing film as hydrogen is formed on hydrogen-permeable membrane.?
In this example, form IGZON film as oxynitride film.The condition forming IGZON film is as follows：By the nitrogen supply (NS) of 40sccm extremely
The reaction chamber of sputter equipment；Pressure in reaction chamber is set to 0.4Pa；Electrical power is set to 0.5kW；Underlayer temperature is set
For 200 DEG C；And compare In using having component2O3∶Ga2O3: the target of ZnO=1: 1: 2 (mol ratios).
Then, heat treatment is executed to the object obtaining by step so far.Heat treatment is in nitrogen atmosphere at 550 DEG C
At a temperature of execute one hour.The object having experienced heat treatment is referred to as sample A, and another object not experiencing heat treatment referred to as compares
Example.Comparative example is the example by being formed with sample A identical technique in addition to heat treatment.
Evaluate the hydrogen concentration in sample A with SIMS, and result figure 12 illustrates.In fig. 12, vertical axises represent sample
Hydrogen concentration in this A and comparative example, and trunnion axis represents that the surface (IGZON film surface) from sample A and comparative example extremely serves as a contrast
The depth at bottom.Solid line represents the distribution of the hydrogen concentration in sample A, and dotted line represents the distribution of the hydrogen concentration in comparative example.?
In each of sample A and comparative example, the highly reliable value 300nm to 550nm on the horizontal axis of hydrogen concentration in IGZO film
Scope in, in IGZON film, the highly reliable value of hydrogen concentration is on the horizontal axis in the scope of 50nm to 150nm.Due to little thickness
(5nm) silicon oxide film and generate the peak value in 200nm to 250nm scope on trunnion axis.Concentration value in this range
Reliability is relatively low.Concentration value near 600nm on trunnion axis is owing to quartz substrate.
Be can confirm that according to Figure 12, in the scope corresponding to IGZO film, the hydrogen concentration in sample A is less than in comparative example
Hydrogen concentration；In the scope corresponding to IGZON film, the hydrogen concentration in sample A is higher than the hydrogen concentration in comparative example.
In the situation that silicon oxide film and IGZON film are formed at IGZO film and experience heat treatment in the above described manner afterwards,
Can confirm that, the hydrogen in IGZO film is released, capture by silicon oxide film and by IGZON film.
According to this example, can confirm that as follows：By include on oxide semiconductor film formed hydrogen-permeable membrane, hydrogen infiltration
The technique that hydrogen captures the step of film and execution heat treatment is formed on film, hydrogen can be caught can from oxide semiconductor film release and by hydrogen
Obtain film capture；Therefore, the oxide semiconductor film having compared with low hydrogen concentration can be formed.
The Japanese patent application S/N.2011-067498 that the application was submitted to Japan Office based on March 25th, 2011,
The entire disclosure of which is incorporated herein by reference.
Claims (7)
1. a kind of method being used for producing the semiconductor devices, comprises the following steps：
Form gate electrode；
Form gate insulating film to cover described gate electrode；
Oxide semiconductor film is formed on described gate insulating film；
First film with hydrogen permeability matter is formed on described oxide semiconductor film；
Described first film is formed there is the second film that hydrogen captures property；
Execution heat treatment is to be delivered to described second film by the hydrogen comprising in described oxide semiconductor film by described first film；
After described heat treatment, first is carried out to a part for described oxide semiconductor, described first film and described second film
Remove；
After described first removes, the second removal is carried out to a part for described first film and described second film；
Form the source electrode contacting with a part for described oxide semiconductor film and drain electrode；And
3rd removal is carried out to a part for described second film overlapping with the channel formation region in described oxide semiconductor film.
2. the method being used for producing the semiconductor devices as claimed in claim 1 is it is characterised in that described first film comprises to aoxidize
Thing.
3. the method that is used for producing the semiconductor devices as claimed in claim 1 is it is characterised in that described oxide semiconductor film
In hydrogen be released by heat treatment.
4. the method that is used for producing the semiconductor devices as claimed in claim 1 it is characterised in that
The metallic element as main component that described second film includes and the conduct that described oxide semiconductor film includes
The metallic element of main component is identical, and
Described first film does not include the described metallic element as main component.
5. the method that is used for producing the semiconductor devices as claimed in claim 1 it is characterised in that
Described first film includes silicon oxide film or oxygen silicon nitride membrane, and
Described second film includes the oxynitride film containing indium.
6. the method that is used for producing the semiconductor devices as claimed in claim 5 it is characterised in that
Described oxide semiconductor film is In-Ga-Zn-O film, and
The described oxynitride film containing indium is In-Ga-Zn-O-N film.
7. the method that is used for producing the semiconductor devices as claimed in claim 5 is it is characterised in that described silicon oxide film or described
The thickness of oxygen silicon nitride membrane is less than or equal to 5nm.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011-067498 | 2011-03-25 | ||
| JP2011067498 | 2011-03-25 |
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| JP2012216795A (en) | 2012-11-08 |
| US9472676B2 (en) | 2016-10-18 |
| JP6006511B2 (en) | 2016-10-12 |
| TWI545652B (en) | 2016-08-11 |
| US20120241738A1 (en) | 2012-09-27 |
| CN102709187A (en) | 2012-10-03 |
| TW201306127A (en) | 2013-02-01 |
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