CN102395708B - 蚀刻剂组合物和方法 - Google Patents

蚀刻剂组合物和方法 Download PDF

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Publication number
CN102395708B
CN102395708B CN201080016265.0A CN201080016265A CN102395708B CN 102395708 B CN102395708 B CN 102395708B CN 201080016265 A CN201080016265 A CN 201080016265A CN 102395708 B CN102395708 B CN 102395708B
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CN
China
Prior art keywords
acid
etchant
weight
etchant composition
salts
Prior art date
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Active
Application number
CN201080016265.0A
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English (en)
Chinese (zh)
Other versions
CN102395708A (zh
Inventor
R·J·杜兰特
李承璡
T·P·塔法诺
朴英哲
李俊雨
李承傭
李鉉奎
李喻珍
S·H·张
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dongwoo Fine Chem Co Ltd
Chemours Co FC LLC
Original Assignee
Dongwoo Fine Chem Co Ltd
EI Du Pont de Nemours and Co
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Filing date
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Priority claimed from US12/721,903 external-priority patent/US20100252530A1/en
Application filed by Dongwoo Fine Chem Co Ltd, EI Du Pont de Nemours and Co filed Critical Dongwoo Fine Chem Co Ltd
Publication of CN102395708A publication Critical patent/CN102395708A/zh
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/067—Etchants
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/388—Improvement of the adhesion between the insulating substrate and the metal by the use of a metallic or inorganic thin film adhesion layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
CN201080016265.0A 2009-04-03 2010-04-02 蚀刻剂组合物和方法 Active CN102395708B (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US16627309P 2009-04-03 2009-04-03
US16626709P 2009-04-03 2009-04-03
US61/166273 2009-04-03
US61/166267 2009-04-03
US12/721,903 US20100252530A1 (en) 2009-04-03 2010-03-11 Etchant composition and method
US12/721903 2010-03-11
PCT/US2010/029741 WO2010115075A1 (en) 2009-04-03 2010-04-02 Etchant composition and method

Publications (2)

Publication Number Publication Date
CN102395708A CN102395708A (zh) 2012-03-28
CN102395708B true CN102395708B (zh) 2016-10-26

Family

ID=42173851

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080016265.0A Active CN102395708B (zh) 2009-04-03 2010-04-02 蚀刻剂组合物和方法

Country Status (4)

Country Link
JP (1) JP5687685B2 (enExample)
CN (1) CN102395708B (enExample)
TW (1) TWI480360B (enExample)
WO (1) WO2010115075A1 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103649373B (zh) 2011-07-04 2017-04-12 三菱瓦斯化学株式会社 铜或以铜为主要成分的化合物的蚀刻液
WO2013032047A1 (ko) * 2011-08-31 2013-03-07 동우 화인켐 주식회사 구리와 티타늄을 포함하는 금속막용 식각액 조성물
JP5799791B2 (ja) * 2011-12-16 2015-10-28 三菱瓦斯化学株式会社 銅及びモリブデンを含む多層膜用エッチング液
JP6135999B2 (ja) * 2012-04-10 2017-05-31 三菱瓦斯化学株式会社 銅およびモリブデンを含む多層膜のエッチングに使用される液体組成物、およびそれを用いたエッチング方法
KR101394133B1 (ko) * 2012-08-22 2014-05-15 주식회사 이엔에프테크놀로지 몰리브덴 합금막 및 인듐 산화막 식각액 조성물
CN102923963A (zh) * 2012-11-15 2013-02-13 杭州格林达化学有限公司 一种玻璃减薄刻蚀液补充液
CN103924242B (zh) * 2013-01-14 2016-05-11 易安爱富科技有限公司 铜/钼膜或铜/钼合金膜的蚀刻液组合物
WO2014171034A1 (ja) * 2013-04-15 2014-10-23 メック株式会社 エッチング液、補給液及び銅配線の形成方法
JP6207248B2 (ja) * 2013-06-17 2017-10-04 株式会社Adeka エッチング液組成物及びエッチング方法
CN104233302B (zh) * 2014-09-15 2016-09-14 南通万德科技有限公司 一种蚀刻液及其应用
JP6807864B2 (ja) * 2015-11-27 2021-01-06 三井金属鉱業株式会社 配線パターン付樹脂積層体の製造方法
JP6736088B2 (ja) * 2017-05-22 2020-08-05 メック株式会社 エッチング液、補給液および銅配線の形成方法
CN108930037B (zh) * 2017-05-22 2021-02-26 东友精细化工有限公司 金属膜蚀刻液组合物及利用其的导电图案形成方法
KR102457165B1 (ko) * 2017-08-11 2022-10-19 동우 화인켐 주식회사 은 함유막 식각액 조성물 및 이를 이용한 도전 패턴 형성 방법
KR102433304B1 (ko) * 2017-08-11 2022-08-16 동우 화인켐 주식회사 금속막 식각액 조성물 및 이를 이용한 도전 패턴 형성 방법
KR102457174B1 (ko) * 2017-08-28 2022-10-19 동우 화인켐 주식회사 은 함유막 식각액 조성물 및 이를 이용한 도전 패턴 형성 방법
CN109423647B (zh) * 2017-08-28 2021-01-15 东友精细化工有限公司 金属膜蚀刻液组合物及利用其的导电图案形成方法
CN108004598A (zh) * 2017-12-01 2018-05-08 绍兴拓邦电子科技有限公司 一种晶体硅边缘刻蚀添加剂及其使用方法
EP3761766A1 (en) * 2019-07-03 2021-01-06 AT & S Austria Technologie & Systemtechnik Aktiengesellschaft Anisotropic etching using additives
CN110938822A (zh) * 2019-11-14 2020-03-31 浙江工业大学 一种钼/铜复合金属层的蚀刻液、蚀刻方法与应用
JPWO2024190648A1 (enExample) * 2023-03-14 2024-09-19

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69734868T2 (de) * 1996-07-25 2006-08-03 Dupont Air Products Nanomaterials L.L.C., Tempe Zusammensetzung und verfahren zum chemisch-mechanischen polieren
US5855805A (en) * 1996-08-08 1999-01-05 Fmc Corporation Microetching and cleaning of printed wiring boards
JP3974305B2 (ja) * 1999-06-18 2007-09-12 エルジー フィリップス エルシーディー カンパニー リミテッド エッチング剤及びこれを用いた電子機器用基板の製造方法と電子機器
KR100396695B1 (ko) * 2000-11-01 2003-09-02 엘지.필립스 엘시디 주식회사 에천트 및 이를 이용한 전자기기용 기판의 제조방법
KR100456373B1 (ko) * 2001-12-31 2004-11-09 엘지.필립스 엘시디 주식회사 구리 또는 구리/티타늄 식각액
US6818142B2 (en) * 2003-03-31 2004-11-16 E. I. Du Pont De Nemours And Company Potassium hydrogen peroxymonosulfate solutions
JP2005029853A (ja) * 2003-07-08 2005-02-03 Mitsubishi Gas Chem Co Inc 銅および銅合金のエッチング液
US20050045852A1 (en) * 2003-08-29 2005-03-03 Ameen Joseph G. Particle-free polishing fluid for nickel-based coating planarization
US7090820B2 (en) * 2003-09-23 2006-08-15 Truox, Inc. Potassium monopersulfate triple salt with increased active oxygen content and substantially no K2S2O8
US7442323B2 (en) 2006-06-02 2008-10-28 E. I. Du Pont De Nemours And Company Potassium monopersulfate solutions
CN101245462A (zh) * 2007-02-13 2008-08-20 峻科技有限公司 蚀刻液组合物与蚀刻方法
US20080224092A1 (en) * 2007-03-15 2008-09-18 Samsung Electronics Co., Ltd. Etchant for metal
KR20100015974A (ko) * 2007-03-31 2010-02-12 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 웨이퍼 재생을 위한 물질의 스트리핑 방법

Also Published As

Publication number Publication date
TW201105780A (en) 2011-02-16
WO2010115075A1 (en) 2010-10-07
JP5687685B2 (ja) 2015-03-18
JP2012522895A (ja) 2012-09-27
CN102395708A (zh) 2012-03-28
TWI480360B (zh) 2015-04-11

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