Classifications

• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
  • C09K13/00—Etching, surface-brightening or pickling compositions
  • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
  • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
  • C23F1/00—Etching metallic material by chemical means
  • C23F1/02—Local etching
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
  • C23F1/00—Etching metallic material by chemical means
  • C23F1/10—Etching compositions
  • C23F1/14—Aqueous compositions
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
  • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
  • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
  • H01L21/321—After treatment
  • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
  • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
  • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
  • H05K3/00—Apparatus or processes for manufacturing printed circuits
  • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
  • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
  • H05K3/067—Etchants
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
  • H05K3/00—Apparatus or processes for manufacturing printed circuits
  • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
  • H05K3/388—Improvement of the adhesion between the insulating substrate and the metal by the use of a metallic or inorganic thin film adhesion layer

Definitions

• the present Invention relates to a wet etchant composition for use in the manufacture of electronic components, such as printed circuit boards, display panels, or semiconductors, and a method of etching or forming a metal pattern by using the same.
• a process of forming a metal wire on a substrate consists of a metal film forming process by using sputtering, a photoresist forming process in a selective region by using photoresist application, exposure and development, and an etching process, and includes washing processes before and after individual unit processes.
• the etching process is a process in which a metal film remains in a selective region by using a photoresist mask, and generally dry etching using plasma or wet etching using an etchant composition to remove excess debris and metal.
• U.S. Patent 7,442,323 discloses a high strength potassium monopersulfate for use in etching solutions, and a method of etching metals using such a compound.
• specific etching compositions are not disclosed. Therefore, in order to avoid the etchant stability problems in this field, there is a need to develop an etchant composition that is not catalyzed by the dissolved metal taken up during the wet etching process, avoids salt precipitation, and which has excellent properties with respect to the etching.
• the present invention provides such an etching solution and method of etching using the same.
• the present invention comprises an etchant composition
• the present invention further comprises a method of etching a substrate comprising 1 ) providing a substrate having a first metal film formed on a surface of the substrate, a second metal film formed on the first metal film, and an optional additional metal film formed on the second metal film, and 2) contacting said substrate with an etchant composition of the present invention as described above.
• FIGURE 1 A is a scanning electron microscope (SEM) picture of a substrate on which a Cu/Mo double film and a photoresist were deposited, and which was then etched by using the etchant composition of Example 2.
• FIGURE 16 is a scanning electron microscope (SEM) picture of the substrate of Figure 1 A on which the Cu/Mo double film and photoresist were deposited and which was etched by using the etchant composition of Example 2, after the photoresist was stripped.
• FIGURE 2A is a scanning electron microscope (SEM) picture of a substrate on which a Cu/Mo double film and photoresist were deposited and which was etched by using the etchant composition of Example 3.
• FIGURE 26 is a scanning electron microscope (SEM) picture of the substrate of Figure 2A on which the Cu/Mo double film and photoresist were deposited and which was etched by using the etchant composition of Example 3, after the photoresist was stripped.
• SEM scanning electron microscope
• high strength potassium monopersuifate means an aqueous solution of potassium hydrogen peroxymonosulfate having an active oxygen content of 0.025%% to 0.8% by weight of active oxygen.
• the solution is commercially available in a concentrated form from E. I. du Pont de Nemours and Company, Wilmington, DE, and can be diluted for use.
• the solution can be prepared from the triple salt (2KHSO 5 KHSO 4 K 2 SO 4 ) available commercially as OXONE monopersuifate compound from E. I. du Pont de Nemours and Company, Wilmington DE, according to the process disclosed in US Patent 7,442,323.
• active oxygen is the quantity of atomic oxygen in excess of that present in the corresponding reduced form of a compound. Active oxygen is expressed as a weight percent. For example, for KHSO5, which has a reduced form of KHSO4. the active oxygen is calculated by the following equation:
• the present invention comprises an etchant composition that can etch a first metal film and a second metal film and collectively wet-etch a multi-film comprising the first single metal film, the second single metal film, and optional additional metal film.
• the first metal film on the surface of the substrate comprises molybdenum or titanium, and the second metal film comprises copper.
• the etchant composition has excellent etching properties and stability.
• the present invention further comprises a method of etching by using the etchant composition of the present invention.
• the present invention provides an etchant composition which comprises A) high strength potassium monopersulfate in an amount to provide from about 0.025% to about 0.8% by weight of active oxygen, preferably from about 0.03% to about 0.6%, more preferably from about 0.03% to about 0.5%, by weight of active oxygen; B) from about 0.01% to about 30%.
• etching composition preferably from about 0.1 % to about 20%, more preferably from about 0.1 % to about 10% by weight of the composition of B 1 ) an organic acid, acetate salt of organic add, ammonium salt of organic acid; or a homopolymer of an organic acid, or B2) a halogen or nitrate salt of phosphomi ⁇ m, t ⁇ trazolium, or benzol ium, or B3) a mixture of component B1 ) and B2); and C) from about 0% to about 97.49% by weight of the composition of water.
• Optional components of the etching composition include secondary oxidizers and anisotropic etching agents.
• Suitable secondary oxidizers include ferric salts and hydrates thereof, cupric salts and hydrates thereof, hydrogen peroxide, or nitric acid.
• Anisotropic etching agents include aromatic or heterocyclic amine compounds.
• the high strength potassium monopersulfate as used herein is an aqueous solution that has an active oxygen content of from about 0.025% to about 0.8% by weight of active oxygen. Commercially available solutions of high strength potassium monopersulfate will need to be diluted with water to obtain this active oxygen range suitable for use in etching. Use of the more concentrated commercial solution is likely to result in an etching time that is so short as to be impractical in manufacturing operations.
• the high strength potassium monopersulfate that is included in the etchant composition according to the present invention is a component that oxidizes copper and improves the etching uniformity.
• the high strength potassium monopersulfate solution also has a low concentration of inert sulfate salts.
• the active oxygen to inert salt weight ratio of the high strength potassium monopersulfate ranges from about 0.8:1 to about 1.7:1.
• the improved SO5/SO4 weight ratio greatly improves metal salt solubilities and eliminates precipitation problems found in the prior art. Dilution does not affect the ratio of active oxygen to inert sulfate salts.
• the active oxygen to inert sulfate salt weight ratio of prior art solid potassium monopersulfate triple salt, and solutions prepared from commercially available potassium monopersulfate salt in the prior art, is approximately 0.15:1.
• High strength potassium monopersulfate is included in the etchant composition of the present invention in an amount of from about 2.5% to about 80% by weight based on the total weight of the composition.
• High strength potassium monopersulfate is preferably included in an amount of from about 2.5% to about 80%, more preferably from about 3% to about 50%, more preferably from about 5% to about 50% by weight based on the total weight of the composition.
• a sufficient amount of the high strength potassium monopersulfate is used to avoid a reduced etching rate for copper, or any formation of stains due to the nonuniform etching. Use of an excessive amount of high strength potassium monopersulfate is avoided to prevent overetching of copper.
• a second component of the etchant composition of the present invention is an organic acid, salt of an organic acid, or homopolymer of organic acid.
• Suitable organic adds are a water soluble carboxylic. dicarboxylic, or tricarboxylic acid.
• the acid is one or more of acetic acid, butanoic acid, citric acid, formic add, gluconic add, glycolic acid, malonic acid, oxalic acid, pentanoic add, sulfobenzoic acid, sulfos ⁇ ccjnic add, sulfophthalic add, salicylic add, sulfosalicylic add, benzoic add, lactic add, glyceric add, succinic acid, malic add, tartaric add, isocitric add, propanoic add, and alkali metal salt of each of the foregoing acids.
• salts of an organic add suitable for use herein are a water soluble ammonium or alkali metal salt of a carboxylic add, dicarboxyiic acid, or tricarboxylic add.
• the salt is one or more of an acetate, butanoate, dtrate, formate, gluconate, glycolate, malonate. oxalate, pentanoate. suffobenzoate, sulfosucdnate, sulfophthalate, or other similar salt.
• the salt can be an ammonium salt, sodium salt, potassium salt, or other alkali metal salt
• suitable homopoiymers of organic acid indude polyacrylic acid, polyvinyl add sulfate, and polyvinyl pyrrolidines.
• a halogen or nitrate salt of phosphonium, tetrazolium, benzolium, or their substituted analogs is suitable for use as the second component of the etchant composition.
• Preferred halogen salts are fluoride, chloride, bromide, or iodide.
• a mixture of the above-described organic acid, salt thereof, or a homopolymer thereof, and the phosphonium, tetrazolium, or benzolium salt is suitable for use as the second component of the etchant composition.
• Preferred substit ⁇ ents for the phosphonium, tetrazolium, or benzolium salts are Cfo to C-
• the organic acid component is included in the etchant composition according to the present invention and functions to smoothly etch copper. It improves the etching amount, the etching rate, and the etching uniformity.
• the organic acid, salt thereof, homopolymer threreof, or the phosphonium, tetrazolium, or benzolium salt, or mixture thereof, is included in an amount of from about 0.01% to about 30% by weight based on the total weight of the etchant composition.
• This second component is preferably included in an amount of from about 0.01% to about 20%, more preferably from about 0.02% to about 10%, more preferably from about 0.02% to about 0.5% by weight based on the total weight of the composition.
• the third component of the etchant composition of the present invention is water.
• the water that is used in the present invention is deionized water and usually, d ⁇ ionized water for semiconductor processes is used. It is preferable that the water used has a purity of 18 megaohms per centimeter or more.
• the water is the remainder of the etchant composition so that the total of the three components is 100% by weight of the etchant composition.
• the water is present at from about 0% to about 97.49% by weight of the etchant composition, preferably from about 20% to about 95% by weight, and more preferably from about 30% to about 90% by weight of the etchant composition.
• One optional component of the etchant composition is secondary oxidizers.
• suitable secondary oxidizers include ferric salts or hydrates thereof, cupric salts or hydrates thereof, hydrogen peroxide, or nitric acid.
• the ferric salts include those containing Fe 3+ and the type of salt is not limited.
• suitable salts include one or more of Fe(NOs)S. Fe 2 (SO 4 h, NH 4 Fe(SO 4 )*, FePO 4 , or hydrates of each of the forgoing.
• the cupric salts are those containing Cu 2* and the type of salt is not limited.
• Suitable salts include one or more of Cu(NOa) 2 , CuSO 4 , NH 4 CuPO 4 , or hydrates of each of the forgoing.
• the secondary oxidizer included in the etchant composition according to the present invention oxidizes molybdenum, increases the etching rate, removes the etched residual, and acts as an auxiliary oxidizing agent capable of etching copper.
• the optional secondary oxidizer is included in an amount of from about 0.01% to about 15% by weight based on the total weight of the composition.
• the secondary oxidizer is preferably included in an amount of from about 0.1% to 10%, more preferably from about 0.5% to about 5% by weight based on the total weight of the composition.
• Use of excessive amounts of the secondary oxidizer is avoided to prevent damage of the underlying substrate or lower film, and to prevent increasing the etching rate significantly, and therefore possibly removing the pattern due to ov ⁇ retching.
• substrates are a semiconductor film such as glass and silicon oxide film, a silicon nitride film, an amorphous silicon, polysilicon. doped amorphous silicon, doped polysilicon and the like.
• An additional optional component of the etchant composition of the present invention is an anisotropic etching agent Suitable examples of such an agent are aromatic amine compounds.
• the optional amine compound that is included in the etchant composition according to the present invention is a component that contributes to control of the etching rate of the copper film.
• an unshared electron pair of a nitrogen atom that is provided in a h ⁇ t ⁇ ro ring of the compound is bonded to copper to prevent organic contaminant substances from being readsorbed onto the copper, thus minimizing the attack of copper.
• the aromatic amine compound is included in an amount of from about 0.005% to about 10% by weight based on the total weight of the composition.
• the amine compound is preferably included in an amount of from about 0.01% to about 5%, more preferably from about 0.05% to about 3% by weight based on the total weight of the composition.
• the amine compound is one or more of pyrrolidine, pyrrolyn, pyrrole, indole, pyrazole, imidazole, pyrimidine, purine, pyridine, aminotetrazole, or a derivative thereof.
• An additional optional component of the etchant composition of the present invention is a corrosion inhibitor.
• corrosion inhibitors include organic adds, alkali metal salts thereof, and imidazoles.
• suitable inhibitors include the following acids: phthalic, citric, glycolic. benzoic, and sulfophthalic.
• Preferred salts include sodium or potassium.
• the corrosion inhibitor can be anodic, cathodic or a mixture thereof. Those that are anodic, or are mixtures with sufficient anodic character can also function as anisotropic etching agents.
• the etchant composition according to the present invention can optionally further comprise phosphoric acid to provide a more uniform etch.
• the etchant composition according to the present invention can also further comprise one or more of a surfactant, a metal Ion blocking agent, a corrosion preventing agent, and a pH controlling agent in addition to the above mentioned components.
• the corrosion preventing agent can indude benzoic acid, its sulfonated derivative, or a phosphate such as disodium hydrogen orthophosphate.
• the etching composition of the present invention is prepared by mixing of the components at ambient temperature.
• the components are blended in a manner that the total adds up to 100% by weight.
• the components can be blended in any sequence.
• a mechanical stirrer can be used to assure complete dissolution.
• the present invention further comprises a method of etching a substrate comprising 1) providing a substrate having a first metal film formed on a surface of the substrate, a second metal film formed on the first metal film, and an optional additional metal film formed on the second metal film, and 2) contacting said substrate with an etchant composition as previously described above.
• the etchant composition comprises A) high strength potassium monopersulfat ⁇ providing from about 0.025% to about 0.8% by weight of active oxygen;
• the first metal film on the surface of the substrate comprises molybdenum or titanium, and the second metal film comprises copper.
• the initial step 1) includes providing a substrate which has on a surface of the substrate one or a plurality of a first metal film, and a second metal film on the first metal film.
• Suitable substrates include a silicon wafer, a glass substrate, a stainless steel substrate, a plastic substrate or a quartz substrate.
• the substrate can be obtained with the metal films already present on the substrate surface, or the metal films can be formed on the surface.
• the substrate can be previously patterned using a photomask process, or unpattemed.
• the metal films can be formed by any of a variety of methods. It is preferable that a vacuum deposition method or a sputtering method be used to form the films.
• the films can then be subjected to a typical washing process, followed by a conventional photomask process.
• the substrate which may have been previously patterned, is etched by contacting the substrate with the etchant composition of the present invention.
• the contacting can include a dipping method, a spray method, and other means of contacting.
• the temperature of the etching solution is in the range of from about 25 ⁇ C to about 5O 0 C. The temperature can be changed in consideration of other processes and other factors, if necessary.
• a pattern is formed on the substrate using a photoresist process prior to contacting with the etchant solution of the present invention as described above.
• the photoresist is formed on the outermost film deposited in step 1) by first layering a photoresist mask onto the second film.
• the photoresist is selectively exposed by lithography, typically by exposure to light. The light reacts with a photo- initiator to cause a change in the exposed portion of the film.
• the exposed photoresist is subjected to post baking.
• the post baked photoresist is developed by contacting with a conventional developing solution to form a photoresist or masking pattern.
• the first and second films, on which the photoresist pattern was formed, are then etched by contacting with the etchant composition according to the present invention as previously described to accomplish a metal pattern.
• the etching rate is modulated or decreased in two ways.
• the anisotropic etching agent reduces the overall copper etch rate and allows the etchant to take advantage of the existing hydrodynamic condition.
• the overall copper etch rate would be too fast causing photoresist pattern attachment to the substrate to be lost as copper removal completely undercuts the pattern. This is due to large excess of oxidizer in the formulation needed to provide enough etching capacity for certain applications, such as liquid crystal display panels.
• the overhanging photoresist shields the underlying copper.
• the anisotropic etching agent moderates (decreases) the etching rate in the second way by decreasing the rate to a greater extent where the solution velocity is slower under the photoresist pattern.
• Corrosion inhibitors that can provide adsorption to the anodic surface will be susceptible to mass transport controlled reaction rates. Higher solution velocities reduce the mass transport condition and allow faster downward etching than sideways etching.
• the first metal film, and the second metal film can be any one or a plurality of a data line, a scan line, a gate electrode, and a source/drain electrode of a flat display device.
• the method of the present invention is useful in the manufacture of electronic components, such as printed circuit boards, display panels, or semiconductors.
• the method is useful for small or large sized substrates. Uniform etching is obtained without damage to the lower adhesion promoting film.
• Test Method 1 Electrochemical test Method
• An electrochemical method was used to evaluate the anodic character of the inhibitor and the inhibitor's response to solution velocity of the etchant composition.
• the instrumentation used was a Gamry MuKEchem 8, running EIS 300. and DC 105 software.
• the potentiostat system was a three electrode system with copper working electrode, platinum counter electrode, and a SCE with Luggin type salt bridge.
• the rotated electrode was a Pine model AGMSRCE.
• Anodic character of a sample etchant composition was measured using a DC polarization curve and etch rates were measured using AC Electrochemical Impedance Spectroscopy (EIS). Measurements were made with both a static electrode and a rotating disk electrode.
• EIS Electrochemical Impedance Spectroscopy
• Test coupons were prepared by first depositing a film of molybdenum of 100 to 500 angstroms in thickness using direct current sputtering onto a glass substrate surface from Corning Incorporated, Corning, NY. This was followed by forming a copper film of 1000 to 5000 an ⁇ stroms in thickness on the molybdenum film using direct current sputtering. The coupon was then patterned by a photomask process. A positive photoresist (DWD-520 available from Dongwoo Fine-Chem Company Ltd., Seoul, S. Korea) was spin coated onto the copper film to form a mask. The coupon was then subjected to light passing trough a lithograph, and photo-initiators in the resist polymerized the exposed portion of the photoresist.
• DWD-520 available from Dongwoo Fine-Chem Company Ltd., Seoul, S. Korea
• Etchant compositions were prepared by mixing the components according to the weight percents described in the following Table 1.
• the etchant compositions of Examples 1 to 3 and the test coupons were inserted into a spray type etching test apparatus (manufactured by SEMES, Co. t Ltd.), and heated to 3O 0 C. When the temperature approached 30 0 C ⁇ 0.1 0 C, the etchant composition to be tested was sprayed onto a test coupon.
• the spraying was continued for the number of seconds listed in Table 2 under EPO(End Point Detection) plus 40% more time. After this time the substrate was removed from the apparatus. The substrate was then washed by using deionized water and dried by using a hot forced-air drying device. The photoresist was removed by using a photoresist stripper. After washing and drying, a scanning electron microscope (SEM; manufactured by HITACHI, Co., Ltd., trademark: S-4700) was used to evaluate the side etching loss, any damage to the lower film, and etching residual substances. The resulting data is shown in Table 2.
• SEM scanning electron microscope
• Comparative Examples A and B Etchant solutions were prepared by mixing the components according to the weight percents described in the following Table 1.
• the process of Examples 1 to 3 was employed to etch test coupons.
• the resulting etched coupons were evaluated using a scanning electron microscope as in Examples 1 to 3.
• the resulting data is shown in Table 2. From Table 2. it can be seen that when the etching was performed using the etcha ⁇ t compositions of Examples 1 to 3 of the present invention, exceilent etching properties were obtained, in the case of Comparative Example A, where the content of the high strength potassium monopersulfate in the etchant composition was lower than in that of Examples 1 to 3, and the content of heterocyclic amine compound was higher than that in Exam pies 1 to 3, there was a problem in that copper was not etched.
• FIGURE 1A is a SEM picture of a substrate on which a Cu/Mo double fiim and photoresist were deposited and which was etched by using an etchant composition of Example 2
• FIGURE 1 B ts a SESvI picture of the substrate of Figure 1 A on which the Cu/Mo double film and photoresist were deposited and which was then etched by using the etchant composition of Example 2, after the photoresist was stripped.
• FIGURE 2A is a SEM picture of a substrate on which a Cu/Mo double film and photoresist were deposited and which was etched by using an etchanf composition of Example 3
• FIGURE 2B JS a SEM picture of the substrate of Figure 2A on which the Cu/Mo double film and photoresist were deposited and which was etched by using the etchant composition of Example 3, after the photoresist was stripped.
• HSPM high strength potassium monopersurfate obtained from E. I. du Pont de Nemours and Company, Wilmington, DE.
• EPD end point detection. The initial number is for the end point of etching of the copper, and the second number is for the end point of the molybdenum etching.
• S/E occurrence of side etching
• T/A Taper angle
• UE indicates unetched f)
• Each PO patterning out, the photoresist pattern was lost or etched away.
• Table 3 demonstrates that the presence of a secondary oxidizer is needed to quickly etch the molybdenum metal film. For Control 1, containing no secondary oxidizer, the molybdenum layer remained unetched. For Control 2, containing no secondary oxidizer, etching of the molybdenum layer required 160 seconds. This example showed a change in the molybdenum etch rate with the presence of the secondary oxidizer.
• HSPM high strength potassium monopersulfate obtained from E. I. du Pont de Nemours and Company, Wilmington, DE.
• EPO end point detection. The initial number is for the end point of etching of the copper, and the second number is for the end point of the molybdenum etching.
• S/E is occurrence of side etching
• T/A is Taper angle
• EPD end point detection.
• the initial number is for the end point of etching of the copper, and the second number is for the end point of the molybdenum etching.
• S/E is occurrence of side etching
• T/A is Taper angle
• the data in Table 5 shows that as the level of organic add increased, the taper angle increased.
• One parameter of anisotropic etching is the taper angle.
• the taper angle is an indication how the etchant is removing metal in the vertical direction faster than the horizontal direction of the pattern. If etching were equal in both directions the angle would be 45 degrees.
• Table 5 shows that the taper angle can be adjusted to create better etching. Examples 10, 11 and 12 demonstrated increased taper angle with increasing add concentration. Also Examples 13 and 14. and Examples 15 and 16, demonstrated an increased taper angle with increasing acid concentration. Examples 17-18 Etchant solutions were prepared by mixing the components according to the weight percents described in the following Table 6. The process of Examples 1 to 3 was employed to etch test coupons. The resulting etched coupons were evaluated using a scanning electron microscope as in Examples 1 to 3. The resulting data is shown in Table 6.
• HSPM high strength potassium monopersuifate obtained from E. I. du Pont de Nemours and Company, Wilmington, DE.
• EPD end point detection. The initial number is for the end point of etching of the copper, and the second number is for the end point of the molybdenum etching.
• S/E is occurrence of side etching
• T/A is Taper angle
• Table 6 demonstrates use of an imidazole as the anisotropic etching agent was very effective in the etchant composition of the present invention to obtain excellent etching properties.
• Examples 19-20 Etchant solutions were prepared by mixing the components according to the weight percents described in the following Table 7. The process of Examples 1 to 3 was employed to etch test coupons. The resulting etched coupons were evaluated using a scanning electron microscope as in Examples 1 to 3. The resulting data is shown in Table 7.
• ⁇ SPM is high strength potassium monopersulfate obtained from E. I. du Pont de Nemours and Company, Wilmington, DE.
• Table 8 shows that tetraphenylpnosphonium salts decreased the etch rate compared to the control and can be used to reduce the corrosion rate.
• the polarization resistance Rp was increased with the addition of the tetraphenylpnosphonium salt, and thus the corresponding etch rate was decreased by 97% inhibitor efficiency.
• the etch rate increased with increasing rpms or solution velocity showing that there was a mass transport influence.
• the anodic adsorption properties of the agent allowed rapid adsorption to slow the etch rate down but not stop etching.
• Table 10 shows that tetraph ⁇ nylphosphonium chloride decreased the etch rate compared to the control and can be used to reduce the corrosion rate.
• the direct current polarization curve indicated the tetraphenylphosphonium salt was a mixed inhibitor that had adsorption properties.
• the etch rate increased with increasing rpms or solution velocity showing that there was a mass transport influence.
• the anodic adsorption properties of the agent allowed rapid adsorption to slow the etch rate down but not stop etching.
• Examples 43-44 Etchant solutions containing anisotropic etching agents were prepared by mixing the components in the weight percentages listed in the following Table 11. The solutions were evaluated for anodic character of the anisotropic etching agent and the agent's response to solution viscosity according to Test Method 1. The resulting data is shown in Table 11.

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