CN102336392B - 构建到半导体集成电路中的电器件 - Google Patents

构建到半导体集成电路中的电器件 Download PDF

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Publication number
CN102336392B
CN102336392B CN201110253951.6A CN201110253951A CN102336392B CN 102336392 B CN102336392 B CN 102336392B CN 201110253951 A CN201110253951 A CN 201110253951A CN 102336392 B CN102336392 B CN 102336392B
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CN
China
Prior art keywords
film
insulating
cavity
water vapor
functional element
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Expired - Fee Related
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CN201110253951.6A
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English (en)
Chinese (zh)
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CN102336392A (zh
Inventor
小岛章弘
杉崎吉昭
下冈义明
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Toshiba Corp
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Toshiba Corp
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Publication of CN102336392A publication Critical patent/CN102336392A/zh
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems ; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0035—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS
    • B81B7/0038—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H10W76/15—Containers comprising an insulating or insulated base
    • H10W76/153—Containers comprising an insulating or insulated base having interconnections in passages through the insulating or insulated base
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
    • B81C1/00468—Releasing structures
    • B81C1/00476—Releasing structures removing a sacrificial layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0221—Variable capacitors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/04—Electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Micromachines (AREA)
CN201110253951.6A 2008-01-25 2009-02-01 构建到半导体集成电路中的电器件 Expired - Fee Related CN102336392B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP015510/2008 2008-01-25
JP2008015510 2008-01-25
JP2008282499A JP4581011B2 (ja) 2008-01-25 2008-10-31 電気部品とその製造方法
JP282499/2008 2008-10-31
CN2009100032764A CN101492149B (zh) 2008-01-25 2009-02-01 构建到半导体集成电路中的电器件

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN2009100032764A Division CN101492149B (zh) 2008-01-25 2009-02-01 构建到半导体集成电路中的电器件

Publications (2)

Publication Number Publication Date
CN102336392A CN102336392A (zh) 2012-02-01
CN102336392B true CN102336392B (zh) 2015-10-21

Family

ID=40898069

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201110253951.6A Expired - Fee Related CN102336392B (zh) 2008-01-25 2009-02-01 构建到半导体集成电路中的电器件
CN2009100032764A Expired - Fee Related CN101492149B (zh) 2008-01-25 2009-02-01 构建到半导体集成电路中的电器件

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN2009100032764A Expired - Fee Related CN101492149B (zh) 2008-01-25 2009-02-01 构建到半导体集成电路中的电器件

Country Status (5)

Country Link
US (3) US8309858B2 (https=)
JP (1) JP4581011B2 (https=)
KR (1) KR101057905B1 (https=)
CN (2) CN102336392B (https=)
TW (1) TWI385784B (https=)

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JP5204171B2 (ja) * 2010-08-25 2013-06-05 株式会社東芝 電気部品およびその製造方法
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JP2014200857A (ja) * 2013-04-01 2014-10-27 株式会社東芝 Ｍｅｍｓ装置及びその製造方法
US9955949B2 (en) * 2013-08-23 2018-05-01 Canon Kabushiki Kaisha Method for manufacturing a capacitive transducer
JP5985451B2 (ja) * 2013-09-06 2016-09-06 株式会社東芝 Ｍｅｍｓデバイス
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JP2015174154A (ja) * 2014-03-13 2015-10-05 株式会社東芝 Ｍｅｍｓデバイスおよびその製造方法
JP6314568B2 (ja) * 2014-03-18 2018-04-25 セイコーエプソン株式会社 Ｍｅｍｓデバイス及びその製造方法
JP2015223689A (ja) * 2014-05-30 2015-12-14 株式会社東芝 電子部品及びその製造方法
CN105645349B (zh) * 2014-12-04 2017-09-22 中芯国际集成电路制造(上海)有限公司 Mems器件的形成方法
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US10384929B2 (en) * 2016-03-22 2019-08-20 Murata Manufacturing Co., Ltd. Impact element for a sensor device and a manufacturing method
JP6668286B2 (ja) 2016-04-01 2020-03-18 スカイワークスフィルターソリューションズジャパン株式会社 電子部品及びその製造方法と電子装置及びその製造方法
JP6648637B2 (ja) * 2016-05-24 2020-02-14 Tdk株式会社 電子部品パッケージ
JP6685839B2 (ja) * 2016-05-30 2020-04-22 株式会社東芝 ガス検出装置
WO2018133940A1 (en) 2017-01-19 2018-07-26 Osram Opto Semiconductors Gmbh Method for producing an optoelectronic element
CN106865489B (zh) * 2017-02-14 2019-01-18 上海华虹宏力半导体制造有限公司 Mems器件的制造方法
JP6990997B2 (ja) * 2017-06-06 2022-01-12 株式会社日立製作所 Ｍｅｍｓデバイス
DE112017008195B4 (de) * 2017-11-14 2023-06-22 Mitsubishi Electric Corporation Halbleitereinrichtung und Verfahren zu deren Herstellung
DE102018118701B3 (de) * 2018-08-01 2019-10-17 RF360 Europe GmbH BAW-Resonator mit verbesserter Verbindung der oberen Elektrode
KR102165882B1 (ko) * 2018-12-28 2020-10-14 주식회사 제이피드림 박막 패키지 및 그의 형성방법
JP7591886B2 (ja) * 2020-03-18 2024-11-29 日本航空電子工業株式会社 デバイス
CN111370375B (zh) * 2020-03-23 2025-03-14 苏州晶方半导体科技股份有限公司 封装结构、半导体器件和封装方法
JP7735629B2 (ja) * 2020-05-25 2025-09-09 ミネベアパワーデバイス株式会社 半導体装置および電力変換装置
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JP7696372B2 (ja) * 2022-08-15 2025-06-20 エーエーシーアコースティックテクノロジーズ（シンセン）カンパニーリミテッド Ｍｅｍｓデバイスの製造方法及びｍｅｍｓデバイス

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Also Published As

Publication number Publication date
US20130032386A1 (en) 2013-02-07
CN101492149B (zh) 2011-11-02
US20140353777A1 (en) 2014-12-04
TW200945551A (en) 2009-11-01
KR20090082148A (ko) 2009-07-29
KR101057905B1 (ko) 2011-08-19
US8309858B2 (en) 2012-11-13
US9676608B2 (en) 2017-06-13
JP2009196078A (ja) 2009-09-03
CN102336392A (zh) 2012-02-01
US20090188709A1 (en) 2009-07-30
CN101492149A (zh) 2009-07-29
JP4581011B2 (ja) 2010-11-17
US8829359B2 (en) 2014-09-09
TWI385784B (zh) 2013-02-11

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Granted publication date: 20151021

Termination date: 20170201