CN102239563B - 具有倾斜侧壁的垂向结型场效应晶体管及其制造方法 - Google Patents

具有倾斜侧壁的垂向结型场效应晶体管及其制造方法 Download PDF

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Publication number
CN102239563B
CN102239563B CN2009801484358A CN200980148435A CN102239563B CN 102239563 B CN102239563 B CN 102239563B CN 2009801484358 A CN2009801484358 A CN 2009801484358A CN 200980148435 A CN200980148435 A CN 200980148435A CN 102239563 B CN102239563 B CN 102239563B
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semiconductor device
layer
semi
conducting material
substrate layer
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CN102239563A (zh
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大卫·C·谢里登
A·P·里特诺尔
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Pi Co
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SS SC IP LLC
Semisouth Laboratories Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H10D30/831—Vertical FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/328—Channel regions of field-effect devices of FETs having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/343—Gate regions of field-effect devices having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H10P30/2042—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors into crystalline silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface

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  • Junction Field-Effect Transistors (AREA)
CN2009801484358A 2008-11-05 2009-11-05 具有倾斜侧壁的垂向结型场效应晶体管及其制造方法 Expired - Fee Related CN102239563B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11143708P 2008-11-05 2008-11-05
US61/111,437 2008-11-05
PCT/US2009/063391 WO2010054073A2 (en) 2008-11-05 2009-11-05 Vertical junction field effect transistors having sloped sidewalls and methods of making

Publications (2)

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CN102239563A CN102239563A (zh) 2011-11-09
CN102239563B true CN102239563B (zh) 2013-08-14

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US (3) US8058655B2 (enExample)
EP (1) EP2345082A4 (enExample)
JP (1) JP5735429B2 (enExample)
KR (1) KR20110099006A (enExample)
CN (1) CN102239563B (enExample)
AU (1) AU2009313533A1 (enExample)
CA (1) CA2740223A1 (enExample)
NZ (1) NZ592399A (enExample)
WO (1) WO2010054073A2 (enExample)

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US8338255B2 (en) * 2009-06-19 2012-12-25 Ss Sc Ip, Llc Methods of making vertical junction field effect transistors and bipolar junction transistors without ion implantation
JP2013530527A (ja) * 2010-05-25 2013-07-25 エスエス エスシー アイピー、エルエルシー 逆方向バイアス下においてゲート−ソース漏れが低減された自己整合半導体デバイスおよび作製方法
US8866147B2 (en) * 2011-12-22 2014-10-21 Avogy, Inc. Method and system for a GaN self-aligned vertical MESFET
US9136116B2 (en) * 2011-08-04 2015-09-15 Avogy, Inc. Method and system for formation of P-N junctions in gallium nitride based electronics
US9184305B2 (en) * 2011-08-04 2015-11-10 Avogy, Inc. Method and system for a GAN vertical JFET utilizing a regrown gate
US8969912B2 (en) 2011-08-04 2015-03-03 Avogy, Inc. Method and system for a GaN vertical JFET utilizing a regrown channel
US8946788B2 (en) 2011-08-04 2015-02-03 Avogy, Inc. Method and system for doping control in gallium nitride based devices
WO2013026035A1 (en) * 2011-08-17 2013-02-21 Ramgoss, Inc. Vertical field effect transistor on oxide semiconductor substrate and method of manufacturing the same
US8698164B2 (en) 2011-12-09 2014-04-15 Avogy, Inc. Vertical GaN JFET with gate source electrodes on regrown gate
US8502234B2 (en) 2011-11-04 2013-08-06 Agovy, Inc. Monolithically integrated vertical JFET and Schottky diode
US9006800B2 (en) 2011-12-14 2015-04-14 Avogy, Inc. Ingan ohmic source contacts for vertical power devices
JP6078160B2 (ja) 2012-09-28 2017-02-08 ユナイテッド テクノロジーズ コーポレイションＵｎｉｔｅｄ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｃｏｒｐｏｒａｔｉｏｎ ガスタービンファン駆動ギアシステムの組立方法
US9472684B2 (en) 2012-11-13 2016-10-18 Avogy, Inc. Lateral GaN JFET with vertical drift region
US8937317B2 (en) 2012-12-28 2015-01-20 Avogy, Inc. Method and system for co-packaging gallium nitride electronics
CN103151391B (zh) 2013-03-18 2015-08-12 北京大学 垂直非均匀掺杂沟道的短栅隧穿场效应晶体管及制备方法
JP6073719B2 (ja) * 2013-03-21 2017-02-01 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
US9324645B2 (en) 2013-05-23 2016-04-26 Avogy, Inc. Method and system for co-packaging vertical gallium nitride power devices
CN105493291A (zh) 2013-06-06 2016-04-13 美国联合碳化硅公司 沟槽屏蔽连接结型场效应晶体管
JP6138619B2 (ja) 2013-07-30 2017-05-31 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
US8947154B1 (en) 2013-10-03 2015-02-03 Avogy, Inc. Method and system for operating gallium nitride electronics
CN103594376B (zh) * 2013-11-08 2016-02-17 北京大学 一种结调制型隧穿场效应晶体管及其制备方法
US9324809B2 (en) 2013-11-18 2016-04-26 Avogy, Inc. Method and system for interleaved boost converter with co-packaged gallium nitride power devices
US10396215B2 (en) * 2015-03-10 2019-08-27 United Silicon Carbide, Inc. Trench vertical JFET with improved threshold voltage control
US20170018657A1 (en) * 2015-07-14 2017-01-19 United Silicon Carbide, Inc. Vertical jfet made using a reduced mask set
WO2018048972A1 (en) * 2016-09-09 2018-03-15 United Silicon Carbide Inc. Trench vertical jfet with improved threshold voltage control
US10276667B1 (en) * 2018-05-31 2019-04-30 Silanna Asia Pte Ltd High voltage breakdown tapered vertical conduction junction transistor
US20230327026A1 (en) * 2022-03-25 2023-10-12 Wolfspeed, Inc. Power semiconductor device with shallow conduction region

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US20030025147A1 (en) * 2001-07-19 2003-02-06 Kazumasa Nomoto Semiconductor device and method of producing the same
US20060199312A1 (en) * 2005-03-04 2006-09-07 Christopher Harris Method of manufacturing a vertical junction field effect transistor having an epitaxial gate
CN101103464A (zh) * 2004-07-08 2008-01-09 半南实验室公司 由碳化硅制造的单片垂直结场效应晶体管和肖特基势垒二极管及其制造方法

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EP2345082A4 (en) * 2008-11-05 2013-07-31 Ss Sc Ip Llc VERTICAL BARRIER FIELD EFFECT TRANSISTORS WITH TILTED SIDE WALLS AND METHOD FOR THEIR MANUFACTURE

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US5747831A (en) * 1994-07-01 1998-05-05 Daimler-Benz Aktiengesellschaft SIC field-effect transistor array with ring type trenches and method of producing them
US20030025147A1 (en) * 2001-07-19 2003-02-06 Kazumasa Nomoto Semiconductor device and method of producing the same
CN101103464A (zh) * 2004-07-08 2008-01-09 半南实验室公司 由碳化硅制造的单片垂直结场效应晶体管和肖特基势垒二极管及其制造方法
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US8058655B2 (en) 2011-11-15
WO2010054073A3 (en) 2010-07-15
US8202772B2 (en) 2012-06-19
KR20110099006A (ko) 2011-09-05
EP2345082A4 (en) 2013-07-31
AU2009313533A1 (en) 2010-05-14
US20120223340A1 (en) 2012-09-06
JP2012508455A (ja) 2012-04-05
US8513675B2 (en) 2013-08-20
WO2010054073A2 (en) 2010-05-14
NZ592399A (en) 2013-12-20
CA2740223A1 (en) 2010-05-14
CN102239563A (zh) 2011-11-09
US20110020991A1 (en) 2011-01-27
US20100148186A1 (en) 2010-06-17
JP5735429B2 (ja) 2015-06-17
EP2345082A2 (en) 2011-07-20

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