CN102239563B - 具有倾斜侧壁的垂向结型场效应晶体管及其制造方法 - Google Patents

具有倾斜侧壁的垂向结型场效应晶体管及其制造方法 Download PDF

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Publication number
CN102239563B
CN102239563B CN2009801484358A CN200980148435A CN102239563B CN 102239563 B CN102239563 B CN 102239563B CN 2009801484358 A CN2009801484358 A CN 2009801484358A CN 200980148435 A CN200980148435 A CN 200980148435A CN 102239563 B CN102239563 B CN 102239563B
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layer
semiconductor material
semiconductor device
conductivity type
substrate layer
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CN102239563A (zh
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大卫·C·谢里登
A·P·里特诺尔
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Pi Co
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SS SC IP LLC
Semisouth Laboratories Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H10D30/831—Vertical FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
    • H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
    • H01L21/047—Making n or p doped regions or layers, e.g. using diffusion using ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/328—Channel regions of field-effect devices of FETs having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/343—Gate regions of field-effect devices having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
CN2009801484358A 2008-11-05 2009-11-05 具有倾斜侧壁的垂向结型场效应晶体管及其制造方法 Expired - Fee Related CN102239563B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11143708P 2008-11-05 2008-11-05
US61/111,437 2008-11-05
PCT/US2009/063391 WO2010054073A2 (en) 2008-11-05 2009-11-05 Vertical junction field effect transistors having sloped sidewalls and methods of making

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CN102239563A CN102239563A (zh) 2011-11-09
CN102239563B true CN102239563B (zh) 2013-08-14

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US (3) US8058655B2 (enExample)
EP (1) EP2345082A4 (enExample)
JP (1) JP5735429B2 (enExample)
KR (1) KR20110099006A (enExample)
CN (1) CN102239563B (enExample)
AU (1) AU2009313533A1 (enExample)
CA (1) CA2740223A1 (enExample)
NZ (1) NZ592399A (enExample)
WO (1) WO2010054073A2 (enExample)

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JP5735429B2 (ja) * 2008-11-05 2015-06-17 パワー・インテグレーションズ・インコーポレーテッド スロープの側壁を有する垂直接合型電界効果トランジスタ、及びその製造方法
NZ597036A (en) * 2009-06-19 2014-01-31 Power Integrations Inc Methods of making vertical junction field effect transistors and bipolar junction transistors without ion implantation and devices made therewith
WO2011149768A2 (en) 2010-05-25 2011-12-01 Ss Sc Ip, Llc Self-aligned semiconductor devices with reduced gate-source leakage under reverse bias and methods of making
US8946788B2 (en) 2011-08-04 2015-02-03 Avogy, Inc. Method and system for doping control in gallium nitride based devices
US9184305B2 (en) * 2011-08-04 2015-11-10 Avogy, Inc. Method and system for a GAN vertical JFET utilizing a regrown gate
US9136116B2 (en) * 2011-08-04 2015-09-15 Avogy, Inc. Method and system for formation of P-N junctions in gallium nitride based electronics
US8866147B2 (en) * 2011-12-22 2014-10-21 Avogy, Inc. Method and system for a GaN self-aligned vertical MESFET
US8969912B2 (en) 2011-08-04 2015-03-03 Avogy, Inc. Method and system for a GaN vertical JFET utilizing a regrown channel
US9112048B2 (en) 2011-08-17 2015-08-18 Ramgoss Inc. Vertical field effect transistor on oxide semiconductor substrate
US8698164B2 (en) 2011-12-09 2014-04-15 Avogy, Inc. Vertical GaN JFET with gate source electrodes on regrown gate
US8502234B2 (en) * 2011-11-04 2013-08-06 Agovy, Inc. Monolithically integrated vertical JFET and Schottky diode
US9006800B2 (en) 2011-12-14 2015-04-14 Avogy, Inc. Ingan ohmic source contacts for vertical power devices
EP2901033A4 (en) 2012-09-28 2016-05-25 United Technologies Corp ASSEMBLY PROCESS FOR A FAN DRIVE GEARBOX SYSTEM
US9472684B2 (en) 2012-11-13 2016-10-18 Avogy, Inc. Lateral GaN JFET with vertical drift region
US8937317B2 (en) 2012-12-28 2015-01-20 Avogy, Inc. Method and system for co-packaging gallium nitride electronics
CN103151391B (zh) 2013-03-18 2015-08-12 北京大学 垂直非均匀掺杂沟道的短栅隧穿场效应晶体管及制备方法
JP6073719B2 (ja) * 2013-03-21 2017-02-01 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
US9324645B2 (en) 2013-05-23 2016-04-26 Avogy, Inc. Method and system for co-packaging vertical gallium nitride power devices
CN105493291A (zh) 2013-06-06 2016-04-13 美国联合碳化硅公司 沟槽屏蔽连接结型场效应晶体管
JP6138619B2 (ja) * 2013-07-30 2017-05-31 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
US8947154B1 (en) 2013-10-03 2015-02-03 Avogy, Inc. Method and system for operating gallium nitride electronics
CN103594376B (zh) * 2013-11-08 2016-02-17 北京大学 一种结调制型隧穿场效应晶体管及其制备方法
US9324809B2 (en) 2013-11-18 2016-04-26 Avogy, Inc. Method and system for interleaved boost converter with co-packaged gallium nitride power devices
US10396215B2 (en) 2015-03-10 2019-08-27 United Silicon Carbide, Inc. Trench vertical JFET with improved threshold voltage control
US20170018657A1 (en) * 2015-07-14 2017-01-19 United Silicon Carbide, Inc. Vertical jfet made using a reduced mask set
WO2018048972A1 (en) * 2016-09-09 2018-03-15 United Silicon Carbide Inc. Trench vertical jfet with improved threshold voltage control
US10276667B1 (en) * 2018-05-31 2019-04-30 Silanna Asia Pte Ltd High voltage breakdown tapered vertical conduction junction transistor
US20230327026A1 (en) * 2022-03-25 2023-10-12 Wolfspeed, Inc. Power semiconductor device with shallow conduction region

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US20060199312A1 (en) * 2005-03-04 2006-09-07 Christopher Harris Method of manufacturing a vertical junction field effect transistor having an epitaxial gate
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JP5735429B2 (ja) * 2008-11-05 2015-06-17 パワー・インテグレーションズ・インコーポレーテッド スロープの側壁を有する垂直接合型電界効果トランジスタ、及びその製造方法

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US5747831A (en) * 1994-07-01 1998-05-05 Daimler-Benz Aktiengesellschaft SIC field-effect transistor array with ring type trenches and method of producing them
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CN101103464A (zh) * 2004-07-08 2008-01-09 半南实验室公司 由碳化硅制造的单片垂直结场效应晶体管和肖特基势垒二极管及其制造方法
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US8202772B2 (en) 2012-06-19
AU2009313533A1 (en) 2010-05-14
NZ592399A (en) 2013-12-20
JP5735429B2 (ja) 2015-06-17
CA2740223A1 (en) 2010-05-14
US20110020991A1 (en) 2011-01-27
US8058655B2 (en) 2011-11-15
EP2345082A2 (en) 2011-07-20
US20120223340A1 (en) 2012-09-06
WO2010054073A3 (en) 2010-07-15
KR20110099006A (ko) 2011-09-05
WO2010054073A2 (en) 2010-05-14
US20100148186A1 (en) 2010-06-17
CN102239563A (zh) 2011-11-09
EP2345082A4 (en) 2013-07-31
US8513675B2 (en) 2013-08-20
JP2012508455A (ja) 2012-04-05

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