NZ592399A - Vertical junction field effect transistors having sloped sidewalls and methods of making - Google Patents

Vertical junction field effect transistors having sloped sidewalls and methods of making

Info

Publication number
NZ592399A
NZ592399A NZ592399A NZ59239909A NZ592399A NZ 592399 A NZ592399 A NZ 592399A NZ 592399 A NZ592399 A NZ 592399A NZ 59239909 A NZ59239909 A NZ 59239909A NZ 592399 A NZ592399 A NZ 592399A
Authority
NZ
New Zealand
Prior art keywords
conductivity type
channel layer
sidewalls
raised regions
substrate
Prior art date
Application number
NZ592399A
Other languages
English (en)
Inventor
David C Sheridan
Andrew P Ritenour
Original Assignee
Power Integrations Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Power Integrations Inc filed Critical Power Integrations Inc
Publication of NZ592399A publication Critical patent/NZ592399A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H10D30/831—Vertical FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/328—Channel regions of field-effect devices of FETs having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/343—Gate regions of field-effect devices having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H10P30/2042—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors into crystalline silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface

Landscapes

  • Junction Field-Effect Transistors (AREA)
NZ592399A 2008-11-05 2009-11-05 Vertical junction field effect transistors having sloped sidewalls and methods of making NZ592399A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11143708P 2008-11-05 2008-11-05
PCT/US2009/063391 WO2010054073A2 (en) 2008-11-05 2009-11-05 Vertical junction field effect transistors having sloped sidewalls and methods of making

Publications (1)

Publication Number Publication Date
NZ592399A true NZ592399A (en) 2013-12-20

Family

ID=42153543

Family Applications (1)

Application Number Title Priority Date Filing Date
NZ592399A NZ592399A (en) 2008-11-05 2009-11-05 Vertical junction field effect transistors having sloped sidewalls and methods of making

Country Status (9)

Country Link
US (3) US8058655B2 (enExample)
EP (1) EP2345082A4 (enExample)
JP (1) JP5735429B2 (enExample)
KR (1) KR20110099006A (enExample)
CN (1) CN102239563B (enExample)
AU (1) AU2009313533A1 (enExample)
CA (1) CA2740223A1 (enExample)
NZ (1) NZ592399A (enExample)
WO (1) WO2010054073A2 (enExample)

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US7704178B2 (en) 2006-07-05 2010-04-27 United Technologies Corporation Oil baffle for gas turbine fan drive gear system
US8667688B2 (en) 2006-07-05 2014-03-11 United Technologies Corporation Method of assembly for gas turbine fan drive gear system
EP2345082A4 (en) * 2008-11-05 2013-07-31 Ss Sc Ip Llc VERTICAL BARRIER FIELD EFFECT TRANSISTORS WITH TILTED SIDE WALLS AND METHOD FOR THEIR MANUFACTURE
US8338255B2 (en) * 2009-06-19 2012-12-25 Ss Sc Ip, Llc Methods of making vertical junction field effect transistors and bipolar junction transistors without ion implantation
JP2013530527A (ja) * 2010-05-25 2013-07-25 エスエス エスシー アイピー、エルエルシー 逆方向バイアス下においてゲート−ソース漏れが低減された自己整合半導体デバイスおよび作製方法
US8866147B2 (en) * 2011-12-22 2014-10-21 Avogy, Inc. Method and system for a GaN self-aligned vertical MESFET
US9136116B2 (en) * 2011-08-04 2015-09-15 Avogy, Inc. Method and system for formation of P-N junctions in gallium nitride based electronics
US9184305B2 (en) * 2011-08-04 2015-11-10 Avogy, Inc. Method and system for a GAN vertical JFET utilizing a regrown gate
US8969912B2 (en) 2011-08-04 2015-03-03 Avogy, Inc. Method and system for a GaN vertical JFET utilizing a regrown channel
US8946788B2 (en) 2011-08-04 2015-02-03 Avogy, Inc. Method and system for doping control in gallium nitride based devices
WO2013026035A1 (en) * 2011-08-17 2013-02-21 Ramgoss, Inc. Vertical field effect transistor on oxide semiconductor substrate and method of manufacturing the same
US8698164B2 (en) 2011-12-09 2014-04-15 Avogy, Inc. Vertical GaN JFET with gate source electrodes on regrown gate
US8502234B2 (en) 2011-11-04 2013-08-06 Agovy, Inc. Monolithically integrated vertical JFET and Schottky diode
US9006800B2 (en) 2011-12-14 2015-04-14 Avogy, Inc. Ingan ohmic source contacts for vertical power devices
JP6078160B2 (ja) 2012-09-28 2017-02-08 ユナイテッド テクノロジーズ コーポレイションＵｎｉｔｅｄ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｃｏｒｐｏｒａｔｉｏｎ ガスタービンファン駆動ギアシステムの組立方法
US9472684B2 (en) 2012-11-13 2016-10-18 Avogy, Inc. Lateral GaN JFET with vertical drift region
US8937317B2 (en) 2012-12-28 2015-01-20 Avogy, Inc. Method and system for co-packaging gallium nitride electronics
CN103151391B (zh) 2013-03-18 2015-08-12 北京大学 垂直非均匀掺杂沟道的短栅隧穿场效应晶体管及制备方法
JP6073719B2 (ja) * 2013-03-21 2017-02-01 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
US9324645B2 (en) 2013-05-23 2016-04-26 Avogy, Inc. Method and system for co-packaging vertical gallium nitride power devices
CN105493291A (zh) 2013-06-06 2016-04-13 美国联合碳化硅公司 沟槽屏蔽连接结型场效应晶体管
JP6138619B2 (ja) 2013-07-30 2017-05-31 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
US8947154B1 (en) 2013-10-03 2015-02-03 Avogy, Inc. Method and system for operating gallium nitride electronics
CN103594376B (zh) * 2013-11-08 2016-02-17 北京大学 一种结调制型隧穿场效应晶体管及其制备方法
US9324809B2 (en) 2013-11-18 2016-04-26 Avogy, Inc. Method and system for interleaved boost converter with co-packaged gallium nitride power devices
US10396215B2 (en) * 2015-03-10 2019-08-27 United Silicon Carbide, Inc. Trench vertical JFET with improved threshold voltage control
CN106298660A (zh) * 2015-05-19 2017-01-04 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制备方法、电子装置
US20170018657A1 (en) * 2015-07-14 2017-01-19 United Silicon Carbide, Inc. Vertical jfet made using a reduced mask set
WO2018048972A1 (en) * 2016-09-09 2018-03-15 United Silicon Carbide Inc. Trench vertical jfet with improved threshold voltage control
US10276667B1 (en) * 2018-05-31 2019-04-30 Silanna Asia Pte Ltd High voltage breakdown tapered vertical conduction junction transistor
US20230327026A1 (en) * 2022-03-25 2023-10-12 Wolfspeed, Inc. Power semiconductor device with shallow conduction region

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JPS5127780A (en) * 1974-08-30 1976-03-08 Matsushita Electric Industrial Co Ltd Tategatadenkaikokatoranjisuta oyobi sonoseizohoho
US4262296A (en) * 1979-07-27 1981-04-14 General Electric Company Vertical field effect transistor with improved gate and channel structure
DE4423068C1 (de) * 1994-07-01 1995-08-17 Daimler Benz Ag Feldeffekt-Transistoren aus SiC und Verfahren zu ihrer Herstellung
US5903020A (en) * 1997-06-18 1999-05-11 Northrop Grumman Corporation Silicon carbide static induction transistor structure
US6967372B2 (en) * 2001-04-10 2005-11-22 Silicon Storage Technology, Inc. Semiconductor memory array of floating gate memory cells with vertical control gate sidewalls and insulation spacers
US6891262B2 (en) * 2001-07-19 2005-05-10 Sony Corporation Semiconductor device and method of producing the same
JP4288907B2 (ja) * 2001-08-29 2009-07-01 株式会社デンソー 炭化珪素半導体装置及びその製造方法
JP2004134547A (ja) * 2002-10-10 2004-04-30 Hitachi Ltd 半導体装置
JP2005012051A (ja) * 2003-06-20 2005-01-13 Toshiba Corp 高耐圧半導体装置及びその製造方法
JP4524735B2 (ja) * 2003-06-20 2010-08-18 ルネサスエレクトロニクス株式会社 半導体記憶装置
US20050067630A1 (en) 2003-09-25 2005-03-31 Zhao Jian H. Vertical junction field effect power transistor
US7202528B2 (en) * 2004-12-01 2007-04-10 Semisouth Laboratories, Inc. Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making
EP1779435B8 (en) * 2004-07-08 2012-03-07 Ss Sc Ip, Llc Monolithic vertical junction field effect transistor and schottky barrier diode fabricated from silicon carbide and method for fabricating the same
JP4890765B2 (ja) * 2005-01-18 2012-03-07 株式会社日立製作所 半導体装置及びその製造方法
US7279368B2 (en) * 2005-03-04 2007-10-09 Cree, Inc. Method of manufacturing a vertical junction field effect transistor having an epitaxial gate
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US7994548B2 (en) * 2008-05-08 2011-08-09 Semisouth Laboratories, Inc. Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making
US7977713B2 (en) * 2008-05-08 2011-07-12 Semisouth Laboratories, Inc. Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making
EP2345082A4 (en) * 2008-11-05 2013-07-31 Ss Sc Ip Llc VERTICAL BARRIER FIELD EFFECT TRANSISTORS WITH TILTED SIDE WALLS AND METHOD FOR THEIR MANUFACTURE

Also Published As

Publication number Publication date
US8058655B2 (en) 2011-11-15
WO2010054073A3 (en) 2010-07-15
US8202772B2 (en) 2012-06-19
KR20110099006A (ko) 2011-09-05
EP2345082A4 (en) 2013-07-31
AU2009313533A1 (en) 2010-05-14
US20120223340A1 (en) 2012-09-06
JP2012508455A (ja) 2012-04-05
US8513675B2 (en) 2013-08-20
WO2010054073A2 (en) 2010-05-14
CA2740223A1 (en) 2010-05-14
CN102239563A (zh) 2011-11-09
CN102239563B (zh) 2013-08-14
US20110020991A1 (en) 2011-01-27
US20100148186A1 (en) 2010-06-17
JP5735429B2 (ja) 2015-06-17
EP2345082A2 (en) 2011-07-20

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Legal Events

Date Code Title Description
ASS Change of ownership

Owner name: POWER INTEGRATIONS, INC., US

Effective date: 20130919

PSEA Patent sealed
LAPS Patent lapsed