CN102194576A - 光电转换器件及其制造方法、电子设备 - Google Patents
光电转换器件及其制造方法、电子设备 Download PDFInfo
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- CN102194576A CN102194576A CN2011100495195A CN201110049519A CN102194576A CN 102194576 A CN102194576 A CN 102194576A CN 2011100495195 A CN2011100495195 A CN 2011100495195A CN 201110049519 A CN201110049519 A CN 201110049519A CN 102194576 A CN102194576 A CN 102194576A
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- electrooptical device
- electrolyte
- functional group
- photoelectric conversion
- optoelectronic pole
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Images
Classifications
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- H—ELECTRICITY
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- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2004—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
- H01G9/2013—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte the electrolyte comprising ionic liquids, e.g. alkyl imidazolium iodide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2059—Light-sensitive devices comprising an organic dye as the active light absorbing material, e.g. adsorbed on an electrode or dissolved in solution
- H01G9/2063—Light-sensitive devices comprising an organic dye as the active light absorbing material, e.g. adsorbed on an electrode or dissolved in solution comprising a mixture of two or more dyes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
- H10K2102/102—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising tin oxides, e.g. fluorine-doped SnO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
- H10K85/344—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising ruthenium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
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- Microelectronics & Electronic Packaging (AREA)
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- Photovoltaic Devices (AREA)
- Conductive Materials (AREA)
Abstract
Description
离子液体 | 有机溶剂 | Z挥发 | |
实施例1 | EMImTCB | 二甘醇二甲醚 | 50 |
实施例2 | EMImTCB | 三甘醇二甲醚 | 59 |
实施例3 | EMImTCB | 四甘醇二甲醚 | 78 |
实施例4 | EMImTCB | MPN | 12 |
实施例5 | EMImTCB | PhOAN | 11 |
实施例6 | EMImTCB | GBL | 14 |
实施例7 | EMImTCB | PC | 9 |
实施例8 | EMImTCB | 苯胺 | 31 |
实施例9 | EMImTCB | DMF | 39 |
实施例10 | EMImTCB | DM苯胺 | 8 |
实施例11 | EMImTCB | NBB | 6 |
实施例12 | EMImTCB | TBP | 7 |
实施例13 | EMImTFSI | 三甘醇二甲醚 | 37 |
实施例14 | EMImFAP | 三甘醇二甲醚 | 25 |
实施例15 | EMImTCB | EMS | 26 |
实施例16 | EMImTCB | DMSO | 27.5 |
实施例17 | EMImTCB | EMS | 26 |
对比例4 | EMImTCB | PhAN | 0 |
对比例5 | EMImBF4 | 三甘醇二甲醚 | -12 |
对比例6 | EMImOTf | 三甘醇二甲醚 | -2 |
对比例7 | P222MOMTFSI | 三甘醇二甲醚 | -9 |
溶剂 | Voc[v] | Jsc[mA/cm2] | FF[%] | 光电转换效率[%] |
EMImTCB | 0.737 | 12.60 | 67.1 | 6.23 |
50wt%EMImTCB/二甘醇二甲醚 | 0.732 | 13.92 | 67.1 | 6.83 |
二甘醇二甲醚 | 0.739 | 13.85 | 68.0 | 6.96 |
溶剂 | Voc[v] | Jsc[mA/cm2] | FF[%] | 光电转换效率[%] |
MPN | 0.71 | 15.7 | 63 | 7.0 |
22wt%EMImTCB/MPN | 0.73 | 14.8 | 65 | 7.0 |
35wt%EMImTFSI/MPN | 0.72 | 14.9 | 65 | 7.0 |
溶剂 | Voc[v] | Jsc[mA/cm2] | FF[%] | 光电转换效率[%] |
EMImTCB | 0.667 | 11.94 | 72.6 | 5.78 |
50wt%EMImTCB/EMS | 0.666 | 14.09 | 71.8 | 6.73 |
Claims (29)
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JP2010049765 | 2010-03-05 | ||
JP2010160585A JP2011204662A (ja) | 2010-03-05 | 2010-07-15 | 光電変換素子およびその製造方法ならびに電子機器 |
JP2010-160585 | 2010-07-15 |
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EP2363869A3 (en) | 2012-08-29 |
CN102194576B (zh) | 2016-08-03 |
EP2363869A2 (en) | 2011-09-07 |
JP2011204662A (ja) | 2011-10-13 |
US20110214739A1 (en) | 2011-09-08 |
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