CN102190487B - 电介质陶瓷及层叠陶瓷电容器 - Google Patents

电介质陶瓷及层叠陶瓷电容器 Download PDF

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CN102190487B
CN102190487B CN2011100381620A CN201110038162A CN102190487B CN 102190487 B CN102190487 B CN 102190487B CN 2011100381620 A CN2011100381620 A CN 2011100381620A CN 201110038162 A CN201110038162 A CN 201110038162A CN 102190487 B CN102190487 B CN 102190487B
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dielectric ceramics
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山口晋一
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Murata Manufacturing Co Ltd
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Abstract

本发明提供一种即使将电介质陶瓷层薄层化,在赋予高电场强度时,高温负载寿命长、寿命偏差小、电容大、电绝缘性高及电容温度特性良好的层叠陶瓷电容器。作为构成层叠陶瓷电容器(1)的电介质陶瓷层(2)电介质陶瓷,使用用100(Ba1-xCax)mTiO3+aMgO+bVO5/2+cReO3/2+dMnO+eSiO2(Re是从Y、La、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm及Yb中选择的至少1种。)表示、且x、a、b、c、d、e、及m分别满足0.05≤x≤0.15、0.01≤a≤0.1、0.05≤b≤0.5、1.0≤c≤5.0、0.1≤d≤1.0、0.5≤e≤2.5、及0.990≤m≤1.030各条件的陶瓷。

Description

电介质陶瓷及层叠陶瓷电容器
技术领域
本发明涉及电介质陶瓷及层叠陶瓷电容器,特别是涉及适合实现层叠陶瓷电容器的小型化且大电容化的电介质陶瓷及使用该电介质陶瓷构成的层叠陶瓷电容器。
背景技术
就用于构成层叠陶瓷电容器所具备的电介质陶瓷层的电介质陶瓷而言,为了得到高介电常数,作为其主成分,使用BaTiO3系化合物。特别是通过BaTiO3中的Ba的一部分被Ca置换得到的(Ba,Ca)TiO3,可以得到高可靠性(高温负载寿命特性)及良好的电容温度特性。
然而,对于层叠陶瓷电容器,近年来对小型化且大电容化的要求变得极为严格。例如,关于电介质陶瓷层的厚度,要求薄至1μm以下。其结果,施加给电介质陶瓷层的电场强度一味上升,用于确保可靠性的设计变得日益严格。
作为用于解决上述的课题的一个手段,例如特开2005-194138号公报(专利文献1)中提出在电介质陶瓷中添加一定量的V等各种元素。
关于上述专利文献1中提出的电介质陶瓷,更具体而言,用组成式:100(Ba1-xCax)mTiO3+aMnO+bV2O5+cSiO2+dRe2O3(其中,Re是从Y、La、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm及Yb中选择的至少1种金属元素)表示,x、m、a、b、c、及d分别满足0.030≤x≤0.20、0.990≤m≤1.030、0.010≤a≤5.0、0.050≤b≤2.5、0.20≤c≤8.0、及0.050≤d≤2.5各条件。
但是,已知上述电介质陶瓷存在以下的课题。关于该电介质陶瓷,其课题在于,由于颗粒(grain)直径的偏差增大,所以在其用于层叠陶瓷电容器时,如果将电介质陶瓷层薄层化使其厚度为1μm左右,并赋予例如高达15kV/mm以上的电场强度,则高温负载寿命缩短且寿命偏差增大。
专利文献1:特开2005-194138号公报
发明内容
因此,本发明的目的在于,提供一种可以解决如上所述的课题的电介质陶瓷及使用该电介质陶瓷构成的层叠陶瓷电容器。
为了解决上述的技术课题,本发明涉及的电介质陶瓷,其特征在于,是用组成式:100(Ba1-xCax)TiO3+aMgO+bVO5/2表示,上述组成式中的x、a、及b分别满足0.05≤x≤0.15、0.01≤a≤0.1、及0.05≤b≤0.5各条件。
关于本发明涉及的电介质陶瓷,在更优选的实施方式中,用组成式:100(Ba1-xCax)mTiO3+aMgO+bVO5/2+cReO3/2+dMnO+eSiO2表示,上述Re是从Y、La、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm及Yb中选择的至少1种金属元素,上述组成式中的x、a、b、c、d、e、及m分别满足0.05≤x≤0.15、0.01≤a≤0.1、0.05≤b≤0.5、1.0≤c≤5.0、0.1≤d≤1.0、0.5≤e≤2.5、及0.990≤m≤1.030各条件。
本发明也提供层叠陶瓷电容器,具备:电容器主体,其包括层叠的多个电介质陶瓷层、及沿着电介质陶瓷层间的特定界面形成的多个内部电极;多个外部电极,其形成在电容器主体的外表面上互不相同的位置,且与内部电极中的特定电极电连接。
本发明涉及的层叠陶瓷电容器,其特征在于,电介质陶瓷层由上述的本发明涉及的电介质陶瓷形成。
根据本发明涉及的电介质陶瓷,可以减小颗粒直径的偏差。由此,在该电介质陶瓷用于层叠陶瓷电容器时,即便将电介质陶瓷层薄层化使其厚度为1μm左右,赋予高达例如15kV/mm以上的电场强度,也可以得到良好的高温负载寿命特性。即,高温负载寿命长且可以减小寿命偏差。
特别是根据本发明涉及的电介质陶瓷的更优选实施方式,除了上述的效果之外,还可以得到例如所谓3000以上的高电容率、例如室温下在10V/1.2μm的电场强度下电阻率logρ为10.5Ω·m以上的高电绝缘性、及在-55℃~+125℃下的电容变化率为±15%以内的良好电容温度特性。
附图说明
图1是以图解的形式示出使用本发明涉及的电介质陶瓷而构成的层叠陶瓷电容器1的截面图。
具体实施方式
参照图1,首先,对应用本发明涉及的电介质陶瓷的层叠陶瓷电容器1进行说明。
层叠陶瓷电容器1具备:由层叠的多个电介质陶瓷层2、和沿着电介质陶瓷层2间的特定界面形成的多个内部电极3及4构成的电容器主体5。内部电极3及4例如以Ni为主成分。
在电容器主体5的外表面上的互不相同的位置形成第一及第二外部电极6及7。外部电极6及7例如以Ag或Cu为主成分。虽未图示,但在外部电极6及7上根据需要形成镀膜。镀膜例如包括Ni镀膜及在其上形成的Sn镀膜。
在图1所示的层叠陶瓷电容器1中,第一及第二外部电极6及7形成在电容器主体5的相互对置的各端面上。内部电极3及4具有与第一外部电极6电连接的多个第一内部电极3和与第二外部电极7电连接的多个第二内部电极4,这些第一及第二的内部电极3及4在层叠方向上看是交替配置。
需要说明的是,层叠陶瓷电容器1可以是具备2个外部电极6及7的2端子型,还可以是具备多个外部电极的多端子型。
就这样的层叠陶瓷电容器1而言,电介质陶瓷层2由如下所述的电介质陶瓷构成,所述电介质陶瓷用组成式:100(Ba1-xCax)TiO3+aMgO+bVO5/2表示,x、a、及b分别满足0.05≤x≤0.15、0.01≤a≤0.1、及0.05≤b≤0.5各条件。
根据该电介质陶瓷,可以减小颗粒直径的偏差。由此,即便是将电介质陶瓷层2薄层化而使其厚度为1μm左右,并赋予高达例如15kV/mm以上的电场强度,就层叠陶瓷电容器1而言,也可以得到良好的高温负载寿命特性。
电介质陶瓷中所含的V在可靠性向上方面是有利的,但容易固溶于BaTiO3,使颗粒直径容易发生偏差。另一方面,Mg通常用作用于抑制粒子生长的添加物。Mg的添加量越多,粒子生长抑制效果越大,另外,烧结温度越是升高。为此,相反会有颗粒直径的偏差增大的情况。特别是在将电介质陶瓷层2薄层化而使其厚度为1μm左右,并且赋予高达例如15kV/mm以上的电场强度的情况下,认为颗粒直径的偏差所致的对可靠性的不良影响增大。
与此相对,如上述的组成所示,按照相对于(Ba,Ca)TiO3的100摩尔份而Mg为0.1摩尔份以下的方式微量添加时,不仅可以抑制粒子生长,还可以实现烧结温度的低温化。前者的粒子生长的抑制作用是Mg的公知作用,但后者的烧结温度的低温化作用是与如上所述的Mg的公知作用相反的作用。但是,通过将Mg的添加量控制在0.1摩尔份以下,可以使粒子生长的抑制作用和烧结温度的低温化作用并存。
其结果,如前所述,可以减小构成电介质陶瓷层2的电介质陶瓷的颗粒直径的偏差,并且可以不使电介质陶瓷层2产生孔隙,即可以使电介质陶瓷层2致密化,由此,如前所述,就层叠陶瓷电容器1而言,可以得到良好的高温负载寿命特性。
需要说明的是,通过向(Ba,Ca)TiO3中微量添加Mg,如上所述可以将烧结温度低温化的理由不明。
在更优选的实施方式中,电介质陶瓷层2由如下所述的电介质陶瓷构成,所述电介质陶瓷用组成式:100(Ba1-xCax)mTiO3+aMgO+bVO5/2+cReO3/2+dMnO+eSiO2表示,Re是从Y、La、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm及Yb中选择的至少1种金属元素,x、a、b、c、d、e、及m分别满足0.05≤x≤0.15、0.01≤a≤0.1、0.05≤b≤0.5、1.0≤c≤5.0、0.1≤d≤1.0、0.5≤e≤2.5、及0.990≤m≤1.030各条件。
根据上述的更优选实施方式涉及的电介质陶瓷,除了上述的效果之外,就层叠陶瓷电容器1而言,可以得到例如所谓3000以上的高电容率、例如室温下在10V/1.2μm的电场强度下的电阻率logρ为10.5Ω·m以上的高电绝缘性、及所谓在-55℃~+125℃下的电容变化率为±15%以内的良好电容温度特性。
需要说明的是,上述的更优选实施方式涉及的电介质陶瓷,特别是用于层叠陶瓷电容器1时是有利的。当然,就层叠陶瓷电容器1而言,也可以使用上述的更优选实施方式涉及的电介质陶瓷以外的用前述的组成式:100(Ba1-xCax)TiO3+aMgO+bVO5/2表示的电介质陶瓷。另外,例如在单层的陶瓷电容器的情况下,可以使用上述的更优选实施方式涉及的电介质陶瓷以外的用组成式:100(Ba1-xCax)TiO3+aMgO+bVO5/2表示的电介质陶瓷即为足够。
当制作用于本发明涉及的电介质陶瓷的原料时,首先,制作(Ba,Ca)TiO3系的主成分粉末。为此,例如,使用如下的固相合成法,即该固相合成法以规定的比例混合含有主成分的构成元素的氧化物、碳酸物、氯化物、金属有机化合物等的化合物粉末并进行煅烧。
另一方面,准备含有作为辅助成分的Mg及V、进而根据需要的Re、Mn及Si各成分的氧化物、碳酸物、氯化物、金属有机化合物等的化合物粉末。此外,这些辅助成分粉末以规定的比例与上述主成分粉末混合,由此得到用于电介质陶瓷的原料粉末。
需要说明的是,就用于电介质陶瓷的原料粉末而言,关于作为主成分的(Ba,Ca)TiO3系的粉末,使用预先煅烧而合成的粉末。即,关于(Ba,Ca)TiO3中的Ca,并非由Ca化合物的后添加所带来的。
为了制造层叠陶瓷电容器1,使用如上所述得到的电介质陶瓷原料粉末,制作陶瓷料浆,使该陶瓷料浆成型为陶瓷生片,将这些多片陶瓷生片层叠,由此得到用于形成电容器主体5的未加工层叠体,实施对该未加工层叠体进行烧成的工序。就对该未加工层叠体进行烧成的工序而言,对如上所述配制的电介质陶瓷原料粉末进行烧成,得到由烧结后的电介质陶瓷形成的电介质陶瓷层2。
以下对根据本发明实施的实验例进行说明。
(A)电介质原料粉末的制作
首先,作为主成分即(Ba1-xCax)mTiO3的起始原料,准备高纯度的BaCO3、CaCO3及TiO2各自的粉末,对这些进行调合,使其为表1~表3所示Ca含量、即“Ca变性量:x”及“(Ba,Ca)/Ti比:m”。
接着,将该调合粉末用球磨机加以湿式混合,使其均匀分散之后,实施干燥处理得到了调整粉末。接着,对得到的调整粉末在1000℃~1200℃的温度下进行煅烧,得到了平均粒径为0.20μm且Ca改性量为表1所示的x的主成分粉末。
需要说明的是,关于平均粒径,使用扫描型电子显微镜观察粉末,对300个粒子的粒径(当量圆直径)进行测长而求出。
另一方面,作为辅助成分,准备了MgO、V2O5、Re2O3、MnCO3及SiO2各自的粉末。需要说明的是,关于上述Re2O3粉末,准备了Y2O3、La2O3、Sm2O3、Eu2O3、Gd2O3、Tb2O3、Dy2O3、Ho2O3、Er2O3、Tm2O3及Yb2O3各自的粉末。
接着,作为Re2O3粉末,选择含有表1~表3的“Re”栏所示的Y、La、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm及Yb的任意金属元素的Re2O3粉末,并且秤量MgO、V2O5、Re2O3、MnCO3及SiO2各自的粉末并使其分别为表1~表3所示的a、b、c、d及e的含量,且通过向前述的主成分粉末中添加,得到了混合粉末。
接着,将该混合粉末用球磨机加以湿式混合,使其均匀分散之后,实施干燥处理,得到了电介质原料粉末。
(B)层叠陶瓷电容器的制作
接着,向上述电介质原料粉末中添加聚乙烯醇缩丁醛系粘合剂、增塑剂及作为有机溶剂的乙醇,通过球磨机将它们加以湿式混合,制作了陶瓷料浆。
接着,利用模唇方式使该陶瓷料浆成型为片状,得到了厚度为1.5μm的矩形陶瓷生片。
接着,在上述陶瓷生片上丝网印刷含有Ni的导电性膏,形成了应该成为内部电极的导电性膏膜。
接着,将形成有导电性膏膜的陶瓷生片层叠多片,并使导电膏膜的被引出侧互不相同,得到了应该成为电容器主体的层叠体。
接着,将该层叠体在N2气氛中、350℃的温度下加热3小时,使粘合剂燃烧之后,在由氧分压为10-9~10-12MPa的H2-N2-H2O气形成的还原性气氛中,以表1~表3的“烧成温度”栏所示的温度烧成2小时,得到了烧结后的电容器主体。
接着,在上述电容器主体的两端面涂布含有玻璃料的Cu膏,在N2气氛中,以800℃的温度烘烤,形成与内部电极电连接的外部电极,得到了各试样涉及的层叠陶瓷电容器。
如此得到的层叠陶瓷电容器的外形尺寸为长2.0mm、宽1.2mm、厚1.0mm,在内部电极间存在的电介质陶瓷层的厚度为1.2μm。另外,有效电介质陶瓷层的层数为5,每1个电介质陶瓷层的对置电极面积为1.8mm2
(C)特性评价
接着,关于各试样涉及的层叠陶瓷电容器,进行了以下所示的评价。
[高温负载可靠性试验]
作为高温负载可靠性试验,边在170℃的温度下施加24V的直流电压(20kV/mm的电场强度)边测定绝缘电阻的经时变化,将各试样的绝缘电阻值为105Ω以下的时刻作为故障,通过威布尔图求出平均故障时间(MTTF)和故障时间的偏差(形状参数:m值)。
[电容率]
测定各试样的静电电容,算出电容率。测定使用自动桥式测定器,在25℃的温度下施加1Vrms、1kHz的交流电压而进行。从得到的静电电容值和内部电极面积及电介质陶瓷层的厚度算出电容率εr
[静电电容的温度变化率]
测定各试样的静电电容的温度变化率。测定是在-55℃~+125℃的范围内边使温度改变边测定静电电容,以25℃下的静电电容值(C25)为基准,利用式ΔCTC=((CTC-C25)/C25)算出有关变化的绝对值为最大的静电电容值(CTC)的变化率(ΔCTC)。
[电阻率]
测定各试样的绝缘电阻,算出电阻率(logρ)。测定是使用绝缘电阻计在25℃的温度下施加120秒的10V直流电压,测定绝缘电阻,从得到的绝缘电阻值和内部电极面积及电介质陶瓷层的厚度算出电阻率(logρ)[Ω·m]。
将以上的评价结果示于表1~表3。
Figure BSA00000434352500081
Figure BSA00000434352500091
Figure BSA00000434352500101
在表1~表3中,试样编号带有*的试样(以下称为“比较试样”。)以外的试样,不仅是本发明的范围内的试样,进而还是用组成式:100(Ba1-xCax)mTiO3+aMgO+bVO5/2+cReO3/2+dMnO+eSiO2表示、且Ca改性量x、Mg添加量a、V添加量b、利用ReO3/2换算的Re2O3添加量c、Mn添加量d、Si添加量e、及(Ba,Ca)/Ti比m分别满足0.05≤x≤0.15、0.01≤a≤0.1、0.05≤b≤0.5、1.0≤c≤5.0、0.1≤d≤1.0、0.5≤e≤2.5、及0.990≤m≤1.030各条件的、本发明的更优选范围的试样。
首先,考察比较试样。
如前所述,Mg具有粒子生长的抑制作用及烧结温度的低温化作用。Mg添加量a小于0.01时,不会发挥添加Mg的效果,或如试样9那样MTTF缩短,或如试样14、19、23及28那样m值减小。另一方面,Mg添加量a大于0.1时,Mg的粒子生长抑制效果过强,烧结所需的烧成温度反而升高。为此,颗粒直径的偏差增大,如试样18、22、27及32那样m值减小。
接着,V如前所述有助于可靠性提高。V添加量b小于0.05时,不会发挥添加V的效果,会像试样9~13那样MTTF缩短。另一方面,V添加量b大于0.5时,V向粒内的固溶增多,随着局部的粒子生长,颗粒直径的偏差增大。为此,像试样28~32那样m值减小。
关于Ca改性量x,在其小于0.05时,不会充分获得添加Mg的效果,会像试样1及2那样MTTF缩短,另外,m值减小。另一方面,Ca改性量x比0.15多时,颗粒粒径的偏差增大,会像试样8那样MTTF缩短,另外m值减小。
关于利用ReO3/2换算的Re2O3添加量c,在其小于1.0时,会像试样33那样ΔCTC的绝对值超过15%。另一方面,Re2O3添加量c超过5.0时,会像试样36那样电容率低于3000。
关于Mn添加量d,在其小于0.1时,会像试样37那样ΔCTC的绝对值高于15%。另一方面,在Mn添加量d超过1.0时,会像试样40那样电容率低于3000,且电阻率(logρ)降低且小于10.5Ω·m。
高于Si添加量e,在其小于0.5时,会像试样41那样ΔCTC的绝对值超过了15%。另一方面,在Si添加量e超过2.5时,会像试样44那样电容率低于3000,且ΔCTC的绝对值超过了15%。
关于(Ba,Ca)/Ti比m,在其小于0.990时,会像试样45那样电阻率(logρ)降低且小于10.5Ω·m。另一方面,在(Ba,Ca)/Ti比m超过1.030时,会像试样48那样ΔCTC的绝对值超过了15%。
对于这些比较试样,根据处于本发明的更优选范围的试样,在MTTF、m值、电容率、ΔCTC及电阻率方面,得到了良好的结果。另外,像试样49~78那样,即便是Re2O3中的Re被Dy以外的Y、La、Sm、Eu、Gd、Tb、Ho、Er、Tm或Yb置换后的试样,也可以得到相同的良好结果。
符号的说明
1-层叠陶瓷电容器,2-电介质陶瓷层,3、4-内部电极,5-电容器主体,6、7-外部电极。

Claims (3)

1.一种电介质陶瓷,其中,
用组成式:100(Ba1-xCax)TiO3+aMgO+bVO5/2表示,
所述x、a、及b分别满足:
0.05≤x≤0.15、0.01≤a≤0.1、及0.05≤b≤0.5各条件。
2.一种电介质陶瓷,其中,
用组成式:100(Ba1-xCax)mTiO3+aMgO+bVO5/2+cReO3/2+dMnO+eSiO2表示,
所述Re是从Y、La、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm及Yb中选择的至少1种金属元素,
所述x、a、b、c、d、e及m分别满足0.05≤x≤0.15、0.01≤a≤0.1、0.05≤b≤0.5、1.0≤c≤5.0、0.1≤d≤1.0、0.5≤e≤2.5及0.990≤m≤1.030各条件。
3.一种层叠陶瓷电容器,其中,具备:
电容器主体,其包括层叠的多个电介质陶瓷层、及沿着所述电介质陶瓷层间的特定界面形成的多个内部电极;和
多个外部电极,其形成在所述电容器主体的外表面上的互不相同的位置,且与所述内部电极中的特定电极电连接;
所述电介质陶瓷层由权利要求1或2所述的电介质陶瓷形成。
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