CN102171827A - 碳化硅半导体器件 - Google Patents

碳化硅半导体器件 Download PDF

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Publication number
CN102171827A
CN102171827A CN2009801393503A CN200980139350A CN102171827A CN 102171827 A CN102171827 A CN 102171827A CN 2009801393503 A CN2009801393503 A CN 2009801393503A CN 200980139350 A CN200980139350 A CN 200980139350A CN 102171827 A CN102171827 A CN 102171827A
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CN
China
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region
semiconductor device
substrate
layer
electrode
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Pending
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CN2009801393503A
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English (en)
Chinese (zh)
Inventor
原田真
玉祖秀人
畑山智亮
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NAT UNIVERSITY CORP NARA I OF
Sumitomo Electric Industries Ltd
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NAT UNIVERSITY CORP NARA I OF
Sumitomo Electric Industries Ltd
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Application filed by NAT UNIVERSITY CORP NARA I OF, Sumitomo Electric Industries Ltd filed Critical NAT UNIVERSITY CORP NARA I OF
Publication of CN102171827A publication Critical patent/CN102171827A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/20—Silicates
    • C01B33/36—Silicates having base-exchange properties but not having molecular sieve properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0115—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors to silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/422—PN diodes having the PN junctions in mesas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/53—Physical imperfections the imperfections being within the semiconductor body 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H10P30/2042—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors into crystalline silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
CN2009801393503A 2008-10-02 2009-08-07 碳化硅半导体器件 Pending CN102171827A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008257280A JP2010087397A (ja) 2008-10-02 2008-10-02 炭化珪素半導体装置
JP2008-257280 2008-10-02
PCT/JP2009/064002 WO2010038547A1 (ja) 2008-10-02 2009-08-07 炭化珪素半導体装置

Publications (1)

Publication Number Publication Date
CN102171827A true CN102171827A (zh) 2011-08-31

Family

ID=42073324

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009801393503A Pending CN102171827A (zh) 2008-10-02 2009-08-07 碳化硅半导体器件

Country Status (8)

Country Link
US (1) US20110175111A1 (enExample)
EP (1) EP2348530B1 (enExample)
JP (1) JP2010087397A (enExample)
KR (1) KR20110061641A (enExample)
CN (1) CN102171827A (enExample)
CA (1) CA2739410A1 (enExample)
TW (1) TW201025594A (enExample)
WO (1) WO2010038547A1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103904107A (zh) * 2012-12-27 2014-07-02 株式会社东芝 半导体装置和制造半导体装置的方法
CN103928322A (zh) * 2014-04-21 2014-07-16 西安电子科技大学 穿通型碳化硅绝缘栅双极型晶体管的制备方法
CN104995739A (zh) * 2013-03-22 2015-10-21 住友电气工业株式会社 碳化硅半导体器件
CN107017300A (zh) * 2016-01-05 2017-08-04 富士电机株式会社 金属氧化物半导体场效应晶体管

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8188538B2 (en) 2008-12-25 2012-05-29 Rohm Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
JP5588670B2 (ja) * 2008-12-25 2014-09-10 ローム株式会社 半導体装置
JP2011134910A (ja) 2009-12-24 2011-07-07 Rohm Co Ltd ＳｉＣ電界効果トランジスタ
JP5668414B2 (ja) 2010-11-01 2015-02-12 住友電気工業株式会社 半導体装置の製造方法
WO2013031172A1 (ja) 2011-08-26 2013-03-07 国立大学法人奈良先端科学技術大学院大学 ＳｉＣ半導体素子およびその製造方法
KR101411490B1 (ko) * 2013-01-23 2014-06-24 박종진 플라즈마 차폐 기능을 가진 도어 플레이트
JP6183200B2 (ja) * 2013-12-16 2017-08-23 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP6208106B2 (ja) * 2014-09-19 2017-10-04 株式会社東芝 半導体装置及びその製造方法
JP6523886B2 (ja) * 2015-09-11 2019-06-05 株式会社東芝 半導体装置
JP6880669B2 (ja) * 2016-11-16 2021-06-02 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法

Family Cites Families (14)

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JP3893734B2 (ja) * 1998-04-23 2007-03-14 株式会社デンソー 炭化珪素半導体装置の製造方法
AU2001245270A1 (en) * 2000-02-15 2001-09-03 The Fox Group, Inc. Method and apparatus for growing low defect density silicon carbide and resulting material
JP3773489B2 (ja) * 2000-11-21 2006-05-10 松下電器産業株式会社 半導体装置およびその製造方法
JP2002368015A (ja) * 2001-06-06 2002-12-20 Nippon Steel Corp 電界効果トランジスタ
DE10247017B4 (de) * 2001-10-12 2009-06-10 Denso Corp., Kariya-shi SiC-Einkristall, Verfahren zur Herstellung eines SiC-Einkristalls, SiC-Wafer mit einem Epitaxiefilm und Verfahren zur Herstellung eines SiC-Wafers, der einen Epitaxiefilm aufweist
US20040045631A1 (en) * 2002-09-09 2004-03-11 White Mary L. Rapid refilling device for paintball ammunition pods
US7221010B2 (en) * 2002-12-20 2007-05-22 Cree, Inc. Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors
US7074643B2 (en) * 2003-04-24 2006-07-11 Cree, Inc. Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same
US7294324B2 (en) * 2004-09-21 2007-11-13 Cree, Inc. Low basal plane dislocation bulk grown SiC wafers
US7314520B2 (en) * 2004-10-04 2008-01-01 Cree, Inc. Low 1c screw dislocation 3 inch silicon carbide wafer
US7348612B2 (en) * 2004-10-29 2008-03-25 Cree, Inc. Metal-semiconductor field effect transistors (MESFETs) having drains coupled to the substrate and methods of fabricating the same
JP2007096263A (ja) * 2005-08-31 2007-04-12 Denso Corp 炭化珪素半導体装置およびその製造方法。
JP5017865B2 (ja) * 2006-01-17 2012-09-05 富士電機株式会社 半導体装置
JP4751308B2 (ja) * 2006-12-18 2011-08-17 住友電気工業株式会社 横型接合型電界効果トランジスタ

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103904107A (zh) * 2012-12-27 2014-07-02 株式会社东芝 半导体装置和制造半导体装置的方法
US9431246B2 (en) 2012-12-27 2016-08-30 Kabushiki Kaisha Toshiba Semiconductor device with low contact resistance SIC region
CN104995739A (zh) * 2013-03-22 2015-10-21 住友电气工业株式会社 碳化硅半导体器件
CN104995739B (zh) * 2013-03-22 2017-10-03 住友电气工业株式会社 碳化硅半导体器件
CN103928322A (zh) * 2014-04-21 2014-07-16 西安电子科技大学 穿通型碳化硅绝缘栅双极型晶体管的制备方法
CN103928322B (zh) * 2014-04-21 2016-08-17 西安电子科技大学 穿通型碳化硅绝缘栅双极型晶体管的制备方法
CN107017300A (zh) * 2016-01-05 2017-08-04 富士电机株式会社 金属氧化物半导体场效应晶体管
CN107017300B (zh) * 2016-01-05 2021-11-16 富士电机株式会社 金属氧化物半导体场效应晶体管

Also Published As

Publication number Publication date
EP2348530A1 (en) 2011-07-27
KR20110061641A (ko) 2011-06-09
WO2010038547A1 (ja) 2010-04-08
EP2348530A4 (en) 2013-01-23
EP2348530B1 (en) 2016-03-09
TW201025594A (en) 2010-07-01
JP2010087397A (ja) 2010-04-15
CA2739410A1 (en) 2010-04-08
US20110175111A1 (en) 2011-07-21

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Application publication date: 20110831