CA2739410A1 - Silicon carbide semiconductor device - Google Patents

Silicon carbide semiconductor device Download PDF

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Publication number
CA2739410A1
CA2739410A1 CA2739410A CA2739410A CA2739410A1 CA 2739410 A1 CA2739410 A1 CA 2739410A1 CA 2739410 A CA2739410 A CA 2739410A CA 2739410 A CA2739410 A CA 2739410A CA 2739410 A1 CA2739410 A1 CA 2739410A1
Authority
CA
Canada
Prior art keywords
region
semiconductor device
substrate
type
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA2739410A
Other languages
English (en)
French (fr)
Inventor
Shin Harada
Hideto Tamaso
Tomoaki Hatayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nara Institute of Science and Technology
Sumitomo Electric Industries Ltd
Original Assignee
Nara Institute of Science and Technology
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nara Institute of Science and Technology, Sumitomo Electric Industries Ltd filed Critical Nara Institute of Science and Technology
Publication of CA2739410A1 publication Critical patent/CA2739410A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/20—Silicates
    • C01B33/36—Silicates having base-exchange properties but not having molecular sieve properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0115—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors to silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/422—PN diodes having the PN junctions in mesas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/53—Physical imperfections the imperfections being within the semiconductor body 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H10P30/2042—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors into crystalline silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/28—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by an annealing step, e.g. for activation of dopants

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
CA2739410A 2008-10-02 2009-08-07 Silicon carbide semiconductor device Abandoned CA2739410A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008-257280 2008-10-02
JP2008257280A JP2010087397A (ja) 2008-10-02 2008-10-02 炭化珪素半導体装置
PCT/JP2009/064002 WO2010038547A1 (ja) 2008-10-02 2009-08-07 炭化珪素半導体装置

Publications (1)

Publication Number Publication Date
CA2739410A1 true CA2739410A1 (en) 2010-04-08

Family

ID=42073324

Family Applications (1)

Application Number Title Priority Date Filing Date
CA2739410A Abandoned CA2739410A1 (en) 2008-10-02 2009-08-07 Silicon carbide semiconductor device

Country Status (8)

Country Link
US (1) US20110175111A1 (enExample)
EP (1) EP2348530B1 (enExample)
JP (1) JP2010087397A (enExample)
KR (1) KR20110061641A (enExample)
CN (1) CN102171827A (enExample)
CA (1) CA2739410A1 (enExample)
TW (1) TW201025594A (enExample)
WO (1) WO2010038547A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5588671B2 (ja) 2008-12-25 2014-09-10 ローム株式会社 半導体装置の製造方法
US8188484B2 (en) * 2008-12-25 2012-05-29 Rohm Co., Ltd. Semiconductor device
JP2011134910A (ja) 2009-12-24 2011-07-07 Rohm Co Ltd ＳｉＣ電界効果トランジスタ
JP5668414B2 (ja) * 2010-11-01 2015-02-12 住友電気工業株式会社 半導体装置の製造方法
EP2750198A4 (en) 2011-08-26 2015-04-15 Nat Univ Corp Nara Inst SIC SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR
JP6018501B2 (ja) * 2012-12-27 2016-11-02 株式会社東芝 半導体装置及びその製造方法
KR101411490B1 (ko) * 2013-01-23 2014-06-24 박종진 플라즈마 차폐 기능을 가진 도어 플레이트
JP6069059B2 (ja) * 2013-03-22 2017-01-25 住友電気工業株式会社 炭化珪素半導体装置
JP6183200B2 (ja) * 2013-12-16 2017-08-23 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
CN103928322B (zh) * 2014-04-21 2016-08-17 西安电子科技大学 穿通型碳化硅绝缘栅双极型晶体管的制备方法
JP6208106B2 (ja) * 2014-09-19 2017-10-04 株式会社東芝 半導体装置及びその製造方法
JP6523886B2 (ja) * 2015-09-11 2019-06-05 株式会社東芝 半導体装置
JP6657963B2 (ja) * 2016-01-05 2020-03-04 富士電機株式会社 Ｍｏｓｆｅｔ
JP6880669B2 (ja) * 2016-11-16 2021-06-02 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3893734B2 (ja) * 1998-04-23 2007-03-14 株式会社デンソー 炭化珪素半導体装置の製造方法
WO2001063020A1 (en) * 2000-02-15 2001-08-30 The Fox Group, Inc. Method and apparatus for growing low defect density silicon carbide and resulting material
KR100454199B1 (ko) * 2000-11-21 2004-10-26 마츠시타 덴끼 산교 가부시키가이샤 반도체장치 및 그 제조방법
JP2002368015A (ja) * 2001-06-06 2002-12-20 Nippon Steel Corp 電界効果トランジスタ
DE10247017B4 (de) * 2001-10-12 2009-06-10 Denso Corp., Kariya-shi SiC-Einkristall, Verfahren zur Herstellung eines SiC-Einkristalls, SiC-Wafer mit einem Epitaxiefilm und Verfahren zur Herstellung eines SiC-Wafers, der einen Epitaxiefilm aufweist
US20040045631A1 (en) * 2002-09-09 2004-03-11 White Mary L. Rapid refilling device for paintball ammunition pods
US7221010B2 (en) * 2002-12-20 2007-05-22 Cree, Inc. Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors
US7074643B2 (en) * 2003-04-24 2006-07-11 Cree, Inc. Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same
US7294324B2 (en) * 2004-09-21 2007-11-13 Cree, Inc. Low basal plane dislocation bulk grown SiC wafers
US7314520B2 (en) * 2004-10-04 2008-01-01 Cree, Inc. Low 1c screw dislocation 3 inch silicon carbide wafer
US7348612B2 (en) * 2004-10-29 2008-03-25 Cree, Inc. Metal-semiconductor field effect transistors (MESFETs) having drains coupled to the substrate and methods of fabricating the same
JP2007096263A (ja) * 2005-08-31 2007-04-12 Denso Corp 炭化珪素半導体装置およびその製造方法。
JP5017865B2 (ja) * 2006-01-17 2012-09-05 富士電機株式会社 半導体装置
JP4751308B2 (ja) * 2006-12-18 2011-08-17 住友電気工業株式会社 横型接合型電界効果トランジスタ

Also Published As

Publication number Publication date
JP2010087397A (ja) 2010-04-15
CN102171827A (zh) 2011-08-31
TW201025594A (en) 2010-07-01
WO2010038547A1 (ja) 2010-04-08
US20110175111A1 (en) 2011-07-21
KR20110061641A (ko) 2011-06-09
EP2348530A1 (en) 2011-07-27
EP2348530A4 (en) 2013-01-23
EP2348530B1 (en) 2016-03-09

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Legal Events

Date Code Title Description
EEER Examination request

Effective date: 20140305

FZDE Discontinued

Effective date: 20160428