CN102160179B - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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Publication number
CN102160179B
CN102160179B CN200980136494.3A CN200980136494A CN102160179B CN 102160179 B CN102160179 B CN 102160179B CN 200980136494 A CN200980136494 A CN 200980136494A CN 102160179 B CN102160179 B CN 102160179B
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China
Prior art keywords
conductive layer
insulator
semiconductor device
insulating film
antenna
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Expired - Fee Related
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CN200980136494.3A
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Chinese (zh)
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CN102160179A (zh
Inventor
江口晋吾
及川欣聪
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of CN102160179A publication Critical patent/CN102160179A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates

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  • Thin Film Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
CN200980136494.3A 2008-09-19 2009-08-26 半导体装置及其制造方法 Expired - Fee Related CN102160179B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008-240812 2008-09-19
JP2008240812 2008-09-19
PCT/JP2009/065280 WO2010032611A1 (en) 2008-09-19 2009-08-26 Semiconductor device and method for manufacturing the same

Publications (2)

Publication Number Publication Date
CN102160179A CN102160179A (zh) 2011-08-17
CN102160179B true CN102160179B (zh) 2014-05-14

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CN200980136494.3A Expired - Fee Related CN102160179B (zh) 2008-09-19 2009-08-26 半导体装置及其制造方法

Country Status (5)

Country Link
US (2) US8552498B2 (cg-RX-API-DMAC7.html)
JP (3) JP5417093B2 (cg-RX-API-DMAC7.html)
CN (1) CN102160179B (cg-RX-API-DMAC7.html)
TW (1) TWI524502B (cg-RX-API-DMAC7.html)
WO (1) WO2010032611A1 (cg-RX-API-DMAC7.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102160179B (zh) * 2008-09-19 2014-05-14 株式会社半导体能源研究所 半导体装置及其制造方法
WO2010035627A1 (en) * 2008-09-25 2010-04-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5455753B2 (ja) * 2009-04-06 2014-03-26 株式会社半導体エネルギー研究所 Ｉｃカード
JP5501174B2 (ja) * 2009-09-17 2014-05-21 株式会社半導体エネルギー研究所 半導体装置
TWI493685B (zh) 2012-02-10 2015-07-21 E Ink Holdings Inc 主動陣列基板上之靜電防護結構
US9911756B2 (en) 2015-08-31 2018-03-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor and electronic device surrounded by layer having assigned band gap to prevent electrostatic discharge damage

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CN1993829A (zh) * 2004-06-02 2007-07-04 株式会社半导体能源研究所 层压系统

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CN1993829A (zh) * 2004-06-02 2007-07-04 株式会社半导体能源研究所 层压系统

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US8957423B2 (en) 2015-02-17
US20100072548A1 (en) 2010-03-25
WO2010032611A1 (en) 2010-03-25
JP2014032693A (ja) 2014-02-20
JP5779272B2 (ja) 2015-09-16
US8552498B2 (en) 2013-10-08
JP2010097599A (ja) 2010-04-30
JP5593430B2 (ja) 2014-09-24
JP2015005294A (ja) 2015-01-08
US20140027852A1 (en) 2014-01-30
CN102160179A (zh) 2011-08-17
JP5417093B2 (ja) 2014-02-12
TWI524502B (zh) 2016-03-01
TW201029151A (en) 2010-08-01

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