CN102083838B - 基于二噻吩并[2,3-d:2′,3′-d′]苯并[1,2-b:4,5-b′]二噻吩的高性能可溶液加工半导体 - Google Patents
基于二噻吩并[2,3-d:2′,3′-d′]苯并[1,2-b:4,5-b′]二噻吩的高性能可溶液加工半导体 Download PDFInfo
- Publication number
- CN102083838B CN102083838B CN200980125974.XA CN200980125974A CN102083838B CN 102083838 B CN102083838 B CN 102083838B CN 200980125974 A CN200980125974 A CN 200980125974A CN 102083838 B CN102083838 B CN 102083838B
- Authority
- CN
- China
- Prior art keywords
- alkyl
- thin film
- dithienobenzodithiophenes
- aryl
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 0 Cc1c(*)[s]c(c2c3*)c1[s]c2c(*)c1c3[s]c2c1[s]c(*)c2* Chemical compound Cc1c(*)[s]c(c2c3*)c1[s]c2c(*)c1c3[s]c2c1[s]c(*)c2* 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D495/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
- C07D495/12—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains three hetero rings
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D495/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
- C07D495/22—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains four or more hetero rings
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
- C09K2211/10—Non-macromolecular compounds
- C09K2211/1003—Carbocyclic compounds
- C09K2211/1011—Condensed systems
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
- C09K2211/10—Non-macromolecular compounds
- C09K2211/1018—Heterocyclic compounds
- C09K2211/1025—Heterocyclic compounds characterised by ligands
- C09K2211/1092—Heterocyclic compounds characterised by ligands containing sulfur as the only heteroatom
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12069—Organic material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP08159525 | 2008-07-02 | ||
| EP08159525.8 | 2008-07-02 | ||
| PCT/EP2009/057985 WO2010000670A1 (en) | 2008-07-02 | 2009-06-25 | High performance solution processable seminconductor based on dithieno [2,3-d:2',3'-d']benzo[1,2-b:4,5-b'] dithiophene |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102083838A CN102083838A (zh) | 2011-06-01 |
| CN102083838B true CN102083838B (zh) | 2016-05-25 |
Family
ID=40912091
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200980125974.XA Expired - Fee Related CN102083838B (zh) | 2008-07-02 | 2009-06-25 | 基于二噻吩并[2,3-d:2′,3′-d′]苯并[1,2-b:4,5-b′]二噻吩的高性能可溶液加工半导体 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8367717B2 (enExample) |
| EP (1) | EP2307424B1 (enExample) |
| JP (1) | JP2011526588A (enExample) |
| KR (2) | KR101855051B1 (enExample) |
| CN (1) | CN102083838B (enExample) |
| CA (1) | CA2729334A1 (enExample) |
| TW (1) | TWI471328B (enExample) |
| WO (1) | WO2010000670A1 (enExample) |
Families Citing this family (53)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2465626B (en) * | 2008-11-28 | 2013-07-31 | Cambridge Display Tech Ltd | Organic semiconductors |
| CN102317345B (zh) | 2008-12-18 | 2013-07-10 | 巴斯夫欧洲公司 | 由二噻吩基亚乙烯基共聚物制备的半导体材料 |
| US8877657B2 (en) | 2009-04-28 | 2014-11-04 | Basf Se | Process for producing semiconductive layers |
| KR101772711B1 (ko) | 2009-06-05 | 2017-09-12 | 바스프 에스이 | 비티오펜-비닐렌 융합 중합체 |
| WO2010146013A1 (en) | 2009-06-15 | 2010-12-23 | Basf Se | Process for preparing regioregular poly-(3-substituted) thiophenes, selenophenes, thia- zoles and selenazoles |
| JP2011044686A (ja) | 2009-07-22 | 2011-03-03 | Ricoh Co Ltd | 新規な有機半導体材料とそれを用いた電子デバイス |
| KR101780083B1 (ko) | 2009-12-02 | 2017-10-10 | 바스프 에스이 | 디티에노벤조-티에노[3,2-b]티오펜 공중합체 및 고성능 용액 공정 가능한 반도체 중합체로서 이의 용도 |
| KR101792896B1 (ko) | 2010-04-19 | 2017-11-20 | 메르크 파텐트 게엠베하 | 벤조디티오펜의 중합체 및 유기 반도체로서의 이의 용도 |
| JP2011256144A (ja) * | 2010-06-10 | 2011-12-22 | Yamamoto Chem Inc | チオフェン化合物の製造方法 |
| JP5811542B2 (ja) * | 2010-06-15 | 2015-11-11 | 株式会社リコー | ジチエノベンゾジチオフェン誘導体からなる有機半導体材料前駆体、インク、絶縁部材、電荷輸送性部材の製造方法 |
| JP5728990B2 (ja) * | 2011-02-10 | 2015-06-03 | 住友化学株式会社 | ジカルコゲノベンゾジピロール化合物、該化合物の製造方法、該化合物を含む薄膜及び該薄膜を含む有機半導体デバイス |
| US8394918B2 (en) | 2011-02-28 | 2013-03-12 | Corning Incorporated | Five-ring fused heteroaromatic compounds and conjugated polymers thereof |
| JP2012188400A (ja) * | 2011-03-11 | 2012-10-04 | Tosoh Corp | ジチエノベンゾジチオフェンの製造方法 |
| JP5990870B2 (ja) * | 2011-03-29 | 2016-09-14 | 東ソー株式会社 | ジチエノベンゾジチオフェン誘導体溶液及び有機半導体層 |
| JP5790069B2 (ja) * | 2011-03-29 | 2015-10-07 | 東ソー株式会社 | ジチエノベンゾジチオフェン誘導体の製造方法 |
| JP2012206953A (ja) * | 2011-03-29 | 2012-10-25 | Tosoh Corp | ジチエノベンゾジチオフェン誘導体及びこれを用いた有機薄膜トランジスタ |
| JP5891646B2 (ja) * | 2011-08-11 | 2016-03-23 | 株式会社リコー | 新規な有機半導体材料およびそれを用いた電子デバイス |
| JP6108329B2 (ja) * | 2011-08-15 | 2017-04-05 | 国立大学法人東京工業大学 | 有機半導体材料 |
| JP5834673B2 (ja) * | 2011-09-16 | 2015-12-24 | 株式会社リコー | ジチエノベンゾジチオフェン誘導体からなる有機発光材料、発光部材、有機発光デバイス |
| JP5948772B2 (ja) * | 2011-09-21 | 2016-07-06 | 東ソー株式会社 | ジチエノベンゾジチオフェン誘導体組成物及びこれを用いた有機薄膜トランジスタ |
| CN102585177B (zh) * | 2012-03-08 | 2014-05-07 | 中国科学院化学研究所 | 光电活性二噻吩并苯并二噻吩类共轭聚合物及其制备方法与应用 |
| JP2013201363A (ja) * | 2012-03-26 | 2013-10-03 | Ricoh Co Ltd | 有機薄膜トランジスタ、有機薄膜トランジスタアレイおよび表示装置 |
| JP6047969B2 (ja) * | 2012-07-17 | 2016-12-21 | 東ソー株式会社 | ジチエノベンゾジチオフェン誘導体溶液及びこれを用いた有機半導体層 |
| CN103730581B (zh) * | 2012-10-15 | 2016-05-18 | 乐金显示有限公司 | 有机发光装置和使用其的有机发光显示装置 |
| KR101571590B1 (ko) | 2012-11-21 | 2015-11-25 | 주식회사 두산 | 유기 화합물 및 이를 이용하는 유기 전계 발광 소자 |
| JP6096313B2 (ja) * | 2012-11-30 | 2017-03-15 | オーシャンズ キング ライティング サイエンス アンド テクノロジー シーオー.,エルティーディー | ピリジノ[2,1,3]チアジアゾールユニットを含有するベンゾジチオフェン系共重合体、製造方法、及び、その使用方法 |
| CN104769002B (zh) * | 2012-11-30 | 2016-10-12 | 海洋王照明科技股份有限公司 | 含噻吩并[3,4-b]噻吩单元的苯并二噻吩类共聚物及其制备方法与应用 |
| JP2014110347A (ja) * | 2012-12-03 | 2014-06-12 | Tosoh Corp | 有機半導体層形成用材料 |
| JP6056498B2 (ja) * | 2013-01-21 | 2017-01-11 | 東ソー株式会社 | ジチエノベンゾジフラン誘導体及びその製造方法 |
| CN103242343B (zh) * | 2013-05-15 | 2015-12-09 | 北京博如德工程技术研究有限公司 | 一种有机小分子半导体材料及其制备方法 |
| CN103289062B (zh) * | 2013-06-04 | 2015-10-28 | 孟鸿 | 一种网状低能级p型聚合物半导体材料及其制备方法与应用 |
| JP6252032B2 (ja) * | 2013-08-19 | 2017-12-27 | 東ソー株式会社 | ベンゾジフラン誘導体及び有機薄膜トランジスタ |
| KR101595919B1 (ko) * | 2013-08-30 | 2016-02-29 | 한국과학기술연구원 | 전도성 유기 반도체 화합물 및 이를 포함하는 유기태양전지 |
| JP6016821B2 (ja) * | 2014-01-10 | 2016-10-26 | 富士フイルム株式会社 | 有機薄膜トランジスタ、有機半導体薄膜および有機半導体材料 |
| JP6331579B2 (ja) * | 2014-03-28 | 2018-05-30 | 東ソー株式会社 | ヘテロアセン誘導体、有機半導体層、及び有機薄膜トランジスタ |
| JP6295781B2 (ja) * | 2014-03-28 | 2018-03-20 | 東ソー株式会社 | ヘテロアセン誘導体、有機半導体層、及び有機薄膜トランジスタ |
| JP6344063B2 (ja) * | 2014-05-29 | 2018-06-20 | 東ソー株式会社 | ジチエノベンゾジチオフェン誘導体の製造方法 |
| JP6318863B2 (ja) * | 2014-05-29 | 2018-05-09 | 東ソー株式会社 | ジチエノベンゾジチオフェン誘導体の製造方法 |
| EP3171420A4 (en) * | 2014-07-18 | 2017-07-05 | Fujifilm Corporation | Organic semiconductor film formation composition, organic semiconductor element, and production method therefor |
| JP6372290B2 (ja) * | 2014-10-07 | 2018-08-15 | 東ソー株式会社 | 1,4−ビス(3−ハロ−2−チエニル)−2,5−ジハロベンゼンの製造方法 |
| CN104393174B (zh) * | 2014-10-27 | 2017-02-15 | 中国科学院化学研究所 | 一种有机场效应晶体管及其在紫外光传感中的应用 |
| EP3050887B1 (en) | 2015-01-29 | 2017-06-28 | Samsung Electronics Co., Ltd. | Fused polycyclic heteroaromatic compound, organic thin film including compound and electronic device including organic thin film |
| JP6413863B2 (ja) * | 2015-03-19 | 2018-10-31 | 東ソー株式会社 | ヘテロアセン誘導体、有機半導体層、及び有機薄膜トランジスタ |
| JP6399956B2 (ja) * | 2015-03-31 | 2018-10-03 | 東ソー株式会社 | ヘテロアセン誘導体、その製造方法、有機半導体層、及び有機薄膜トランジスタ |
| JP6597087B2 (ja) * | 2015-09-09 | 2019-10-30 | Dic株式会社 | 有機化合物、その製造方法、それを含有する有機半導体材料及びそれを含有する有機トランジスタ |
| WO2017086320A1 (ja) | 2015-11-20 | 2017-05-26 | 富士フイルム株式会社 | 有機半導体組成物、有機半導体膜、有機薄膜トランジスタおよび有機薄膜トランジスタの製造方法 |
| EP3522243A4 (en) | 2016-09-29 | 2019-10-23 | FUJIFILM Corporation | COMPOSITION FOR FORMING AN ORGANIC SEMICONDUCTOR FILM, ORGANIC SEMICONDUCTOR FILM AND METHOD FOR THE PRODUCTION THEREOF AND ORGANIC SEMICONDUCTOR ELEMENT |
| CN109791983B (zh) * | 2016-09-29 | 2023-06-16 | 富士胶片株式会社 | 微晶有机半导体膜、有机半导体晶体管及其制造方法 |
| CN110582502A (zh) * | 2016-12-06 | 2019-12-17 | 巴斯夫欧洲公司 | 噻吩并-茚并-单体和聚合物 |
| JP7034541B2 (ja) * | 2017-07-18 | 2022-03-14 | 株式会社日本触媒 | 縮合多環式化合物 |
| US10686145B2 (en) | 2017-07-28 | 2020-06-16 | Samsung Electronics Co., Ltd. | Organic compound, organic thin film, and electronic device |
| KR102464890B1 (ko) | 2017-10-18 | 2022-11-07 | 삼성전자주식회사 | 축합다환 헤테로방향족 화합물, 유기 박막 및 전자 소자 |
| CN111471055B (zh) * | 2020-01-17 | 2021-07-16 | 中国长江三峡集团有限公司 | 苯并三噻吩的二维非富勒烯受体材料与用途 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007068618A1 (en) * | 2005-12-12 | 2007-06-21 | Ciba Holding Inc. | Organic semiconductors and their manufacture |
| WO2008026602A1 (en) * | 2006-08-28 | 2008-03-06 | Tosoh Corporation | Heteroacene derivative, tetrahaloterphenyl derivative, and their production methods |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4423995A (en) | 1981-06-17 | 1984-01-03 | Beloit Corporation | Arrangement for automatic changeover between ream and skid loading in a continuous sheeter |
| US5198153A (en) | 1989-05-26 | 1993-03-30 | International Business Machines Corporation | Electrically conductive polymeric |
| JP3224829B2 (ja) | 1991-08-15 | 2001-11-05 | 株式会社東芝 | 有機電界効果型素子 |
| WO1996021659A1 (en) | 1995-01-10 | 1996-07-18 | University Of Technology, Sydney | Organic semiconductor |
| WO2006086082A2 (en) | 2004-12-23 | 2006-08-17 | Northwestern University | Siloxane-polymer dielectric compositions and related organic field-effect transistors |
| JP2007088016A (ja) * | 2005-09-20 | 2007-04-05 | Konica Minolta Holdings Inc | 有機半導体材料、有機半導体膜、有機半導体デバイス、有機薄膜トランジスタ及び有機エレクトロルミネッセンス素子 |
| WO2007075748A2 (en) | 2005-12-20 | 2007-07-05 | Northwestern University | Intercalated superlattice compositions and related methods for modulating dielectric property |
| JP5499422B2 (ja) | 2006-06-28 | 2014-05-21 | コニカミノルタ株式会社 | 有機半導体材料、有機半導体膜、有機薄膜トランジスタ及び有機薄膜トランジスタの製造方法 |
| JP5272345B2 (ja) * | 2006-08-28 | 2013-08-28 | 東ソー株式会社 | ヘテロアセン誘導体、テトラハロターフェニル誘導体及びそれらの製造方法 |
| WO2009016107A1 (en) | 2007-07-30 | 2009-02-05 | Basf Se | Method for depositing a semiconducting layer from a liquid |
| JP5160842B2 (ja) * | 2007-08-28 | 2013-03-13 | 山本化成株式会社 | 有機トランジスタ |
-
2009
- 2009-06-22 TW TW98120880A patent/TWI471328B/zh not_active IP Right Cessation
- 2009-06-25 WO PCT/EP2009/057985 patent/WO2010000670A1/en not_active Ceased
- 2009-06-25 KR KR1020177000100A patent/KR101855051B1/ko not_active Expired - Fee Related
- 2009-06-25 EP EP09772370.4A patent/EP2307424B1/en not_active Not-in-force
- 2009-06-25 KR KR1020117002722A patent/KR20110031364A/ko not_active Ceased
- 2009-06-25 JP JP2011515389A patent/JP2011526588A/ja active Pending
- 2009-06-25 US US13/002,208 patent/US8367717B2/en not_active Expired - Fee Related
- 2009-06-25 CA CA2729334A patent/CA2729334A1/en not_active Abandoned
- 2009-06-25 CN CN200980125974.XA patent/CN102083838B/zh not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007068618A1 (en) * | 2005-12-12 | 2007-06-21 | Ciba Holding Inc. | Organic semiconductors and their manufacture |
| WO2008026602A1 (en) * | 2006-08-28 | 2008-03-06 | Tosoh Corporation | Heteroacene derivative, tetrahaloterphenyl derivative, and their production methods |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101855051B1 (ko) | 2018-05-04 |
| CA2729334A1 (en) | 2010-01-07 |
| EP2307424B1 (en) | 2018-08-15 |
| CN102083838A (zh) | 2011-06-01 |
| EP2307424A1 (en) | 2011-04-13 |
| WO2010000670A1 (en) | 2010-01-07 |
| KR20170010056A (ko) | 2017-01-25 |
| US8367717B2 (en) | 2013-02-05 |
| JP2011526588A (ja) | 2011-10-13 |
| US20110155248A1 (en) | 2011-06-30 |
| KR20110031364A (ko) | 2011-03-25 |
| TW201008948A (en) | 2010-03-01 |
| TWI471328B (zh) | 2015-02-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102083838B (zh) | 基于二噻吩并[2,3-d:2′,3′-d′]苯并[1,2-b:4,5-b′]二噻吩的高性能可溶液加工半导体 | |
| US8389670B2 (en) | Dithienobenzo-thieno[3,2-B]thiophene-copolymer and its use as high performance solution processable semiconducting polymer | |
| CN102084436B (zh) | 聚(5,5′-二(噻吩-2-基)苯并[2,1-b;3,4-b′]二噻吩)及其作为高性能可溶液加工半导体聚合物的用途 | |
| CN102459398B (zh) | 稠合的联噻吩-亚乙烯基共聚物 | |
| CN103635505B (zh) | 二噻吩并邻苯二甲酰亚胺半导体聚合物 | |
| CN105646528A (zh) | 一种可溶性并噻吩衍生物及其制备和应用 | |
| KR101072477B1 (ko) | 고분자 곁사슬에 알킬티오펜 기가 치환된 유기 반도체 화합물 및 이를 이용한 유기 박막 트랜지스터 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20211029 Address after: Seoul, South Kerean Patentee after: Clap Ltd. Patentee after: MAX-PLANCK-GESELLSCHAFT ZUR FORDERUNG DER WISSENSCHAFT E.V. Address before: Ludwigshafen, Germany Patentee before: BASF SE Patentee before: MAX-PLANCK-GESELLSCHAFT ZUR FORDERUNG DER WISSENSCHAFT E.V. |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160525 |