JP2011526588A - ジチエノ[2,3−d:2’,3’−d]ベンゾ[1,2−b:4,5−b’]ジチオフェン系の高性能で溶液加工可能な半導体 - Google Patents

ジチエノ[2,3−d:2’,3’−d]ベンゾ[1,2−b:4,5−b’]ジチオフェン系の高性能で溶液加工可能な半導体 Download PDF

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JP2011526588A
JP2011526588A JP2011515389A JP2011515389A JP2011526588A JP 2011526588 A JP2011526588 A JP 2011526588A JP 2011515389 A JP2011515389 A JP 2011515389A JP 2011515389 A JP2011515389 A JP 2011515389A JP 2011526588 A JP2011526588 A JP 2011526588A
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alkyl
aryl
dithienobenzodithiophene
thin film
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JP2011526588A5 (enExample
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カストラー,マルセル
ケーラー,ズィルケ,アニカ
ミュレン,クラウス
カオ,ポン
ベックマン,ディルク
フォン,シンリヤン
ノク ツァオ,ホイ
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BASF SE
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/649Aromatic compounds comprising a hetero atom
    • H10K85/657Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6576Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D495/00Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
    • C07D495/12Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains three hetero rings
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D495/00Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
    • C07D495/22Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains four or more hetero rings
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/06Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/10Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2211/00Chemical nature of organic luminescent or tenebrescent compounds
    • C09K2211/10Non-macromolecular compounds
    • C09K2211/1003Carbocyclic compounds
    • C09K2211/1011Condensed systems
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2211/00Chemical nature of organic luminescent or tenebrescent compounds
    • C09K2211/10Non-macromolecular compounds
    • C09K2211/1018Heterocyclic compounds
    • C09K2211/1025Heterocyclic compounds characterised by ligands
    • C09K2211/1092Heterocyclic compounds characterised by ligands containing sulfur as the only heteroatom
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12035Materials
    • G02B2006/12069Organic material
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/466Lateral bottom-gate IGFETs comprising only a single gate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14Carrier transporting layers
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
  • Thin Film Transistor (AREA)
JP2011515389A 2008-07-02 2009-06-25 ジチエノ[2,3−d:2’,3’−d]ベンゾ[1,2−b:4,5−b’]ジチオフェン系の高性能で溶液加工可能な半導体 Pending JP2011526588A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP08159525 2008-07-02
EP08159525.8 2008-07-02
PCT/EP2009/057985 WO2010000670A1 (en) 2008-07-02 2009-06-25 High performance solution processable seminconductor based on dithieno [2,3-d:2',3'-d']benzo[1,2-b:4,5-b'] dithiophene

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JP2011526588A true JP2011526588A (ja) 2011-10-13
JP2011526588A5 JP2011526588A5 (enExample) 2012-08-09

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US (1) US8367717B2 (enExample)
EP (1) EP2307424B1 (enExample)
JP (1) JP2011526588A (enExample)
KR (2) KR101855051B1 (enExample)
CN (1) CN102083838B (enExample)
CA (1) CA2729334A1 (enExample)
TW (1) TWI471328B (enExample)
WO (1) WO2010000670A1 (enExample)

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JP2013041984A (ja) * 2011-08-15 2013-02-28 Tokyo Institute Of Technology 有機半導体材料
JP2013201363A (ja) * 2012-03-26 2013-10-03 Ricoh Co Ltd 有機薄膜トランジスタ、有機薄膜トランジスタアレイおよび表示装置
JP2014022498A (ja) * 2012-07-17 2014-02-03 Tosoh Corp ジチエノベンゾジチオフェン誘導体溶液及びこれを用いた有機半導体層
JP2014110347A (ja) * 2012-12-03 2014-06-12 Tosoh Corp 有機半導体層形成用材料
JP2014139146A (ja) * 2013-01-21 2014-07-31 Tosoh Corp ジチエノベンゾジフラン誘導体及びその製造方法
JP2015038044A (ja) * 2013-08-19 2015-02-26 東ソー株式会社 ベンゾジフラン誘導体及び有機薄膜トランジスタ
JP2015133390A (ja) * 2014-01-10 2015-07-23 富士フイルム株式会社 有機薄膜トランジスタ、有機半導体薄膜および有機半導体材料
JP2015189751A (ja) * 2014-03-28 2015-11-02 東ソー株式会社 ヘテロアセン誘導体、有機半導体層、及び有機薄膜トランジスタ
JP2015189752A (ja) * 2014-03-28 2015-11-02 東ソー株式会社 ヘテロアセン誘導体、有機半導体層、及び有機薄膜トランジスタ
JP2015224239A (ja) * 2014-05-29 2015-12-14 東ソー株式会社 ジチエノベンゾジチオフェン誘導体の製造方法
JP2015535546A (ja) * 2012-11-30 2015-12-14 オーシャンズ キング ライティング サイエンス アンド テクノロジー シーオー.,エルティーディー ピリジノ[2,1,3]チアジアゾールユニットを含有するベンゾジチオフェン系共重合体、製造方法、及び、その使用方法
JP2016501294A (ja) * 2012-11-30 2016-01-18 オーシャンズ キング ライティング サイエンス アンド テクノロジー シーオー.,エルティーディー チエノ[3,4−b]チオフェンユニットを含有するベンゾジチオフェン系共重合体、製造方法、及びその使用方法
JP2016074626A (ja) * 2014-10-07 2016-05-12 東ソー株式会社 1,4−ビス(3−ハロ−2−チエニル)−2,5−ジハロベンゼンの製造方法
JP2016175860A (ja) * 2015-03-19 2016-10-06 東ソー株式会社 ヘテロアセン誘導体、有機半導体層、及び有機薄膜トランジスタ
JP2016190826A (ja) * 2015-03-31 2016-11-10 東ソー株式会社 ヘテロアセン誘導体、その製造方法、有機半導体層、及び有機薄膜トランジスタ
JP2017052721A (ja) * 2015-09-09 2017-03-16 Dic株式会社 有機化合物、その製造方法、それを含有する有機半導体材料及びそれを含有する有機トランジスタ
WO2017086320A1 (ja) 2015-11-20 2017-05-26 富士フイルム株式会社 有機半導体組成物、有機半導体膜、有機薄膜トランジスタおよび有機薄膜トランジスタの製造方法
WO2018061821A1 (ja) 2016-09-29 2018-04-05 富士フイルム株式会社 有機半導体膜形成用組成物、有機半導体膜及びその製造方法、並びに、有機半導体素子
JP2019019083A (ja) * 2017-07-18 2019-02-07 株式会社日本触媒 縮合多環式化合物
US10559764B2 (en) 2015-01-29 2020-02-11 Samsung Electronics Co., Ltd. Fused polycyclic heteroaromatic compound, organic thin film including compound and electronic device including organic thin film
US10686145B2 (en) 2017-07-28 2020-06-16 Samsung Electronics Co., Ltd. Organic compound, organic thin film, and electronic device
US11242357B2 (en) 2017-10-18 2022-02-08 Samsung Electronics Co., Ltd. Fused polycyclic heteroaromatic compound and organic thin film and electronic device

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JP2011044686A (ja) 2009-07-22 2011-03-03 Ricoh Co Ltd 新規な有機半導体材料とそれを用いた電子デバイス
CN102639591B (zh) 2009-12-02 2015-05-13 巴斯夫欧洲公司 二噻吩并苯并噻吩并[3,2-b]噻吩共聚物及其作为高性能可溶液加工半导体聚合物的用途
JP5847800B2 (ja) 2010-04-19 2016-01-27 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングMerck Patent Gesellschaft mit beschraenkter Haftung ベンゾジチオフェンのポリマーおよび有機半導体としてのそれらの使用
JP2011256144A (ja) * 2010-06-10 2011-12-22 Yamamoto Chem Inc チオフェン化合物の製造方法
JP5811542B2 (ja) * 2010-06-15 2015-11-11 株式会社リコー ジチエノベンゾジチオフェン誘導体からなる有機半導体材料前駆体、インク、絶縁部材、電荷輸送性部材の製造方法
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CN102585177B (zh) * 2012-03-08 2014-05-07 中国科学院化学研究所 光电活性二噻吩并苯并二噻吩类共轭聚合物及其制备方法与应用
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KR101595919B1 (ko) * 2013-08-30 2016-02-29 한국과학기술연구원 전도성 유기 반도체 화합물 및 이를 포함하는 유기태양전지
JP6318863B2 (ja) * 2014-05-29 2018-05-09 東ソー株式会社 ジチエノベンゾジチオフェン誘導体の製造方法
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JP2013041984A (ja) * 2011-08-15 2013-02-28 Tokyo Institute Of Technology 有機半導体材料
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