CN102077344A - 穿硅通孔桥接互连件 - Google Patents

穿硅通孔桥接互连件 Download PDF

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Publication number
CN102077344A
CN102077344A CN2009801244053A CN200980124405A CN102077344A CN 102077344 A CN102077344 A CN 102077344A CN 2009801244053 A CN2009801244053 A CN 2009801244053A CN 200980124405 A CN200980124405 A CN 200980124405A CN 102077344 A CN102077344 A CN 102077344A
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nude film
bridge joint
nude
upside
tsv
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CN102077344B (zh
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阿尔温德·钱德拉舍卡兰
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Qualcomm Inc
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Qualcomm Inc
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Abstract

一种集成电路桥接互连系统包括第一裸片及第二裸片，所述第一裸片及第二裸片是以并排配置提供且通过桥接裸片相互电互连。所述桥接裸片包括穿硅通孔(TSV)以将所述桥接裸片上的导电互连线连接到所述第一裸片及所述第二裸片。可在所述桥接裸片上提供有源电路，而非互连线。至少一个或一个以上额外裸片可堆叠于所述桥接裸片上且互连到所述桥接裸片。

Description

穿硅通孔桥接互连件
技术领域
本发明涉及集成电路(IC)封装，且更具体地说涉及在衬底封装内的并排的集成电路之间的桥接互连。
背景技术
在IC封装中，需要以并排配置在封装内提供半导体裸片且将所述半导体裸片互连。所述封装可为(例如)引线框封装。
在一种配置中，半导体裸片经封装成每一裸片的有源面背对封装基座。裸片之间的互连是通过线接合(wire bonding)实现。然而，装配互连的设计规则可能会受线直径及线接合毛细工具的尺寸限制，其需要足够大且间隔足够远以适应所述尺寸的接合垫。因此，互连件的数目受互连件的大小限制。另外，裸片到裸片(die-to-die)线接合中的引线电感可能会限制已封装装置的性能。另外，金线为用于线接合的常规选择，其显著增加封装的净成本。
在另一种配置(倒装焊球封装)中，裸片的有源装置区域在(例如，向下)面对封装安装衬底的表面上。在此配置中，相邻裸片之间的互连密度也受接触垫大小要求限制。
第5,225,633号美国专利揭示使用桥接元件将处于并排配置中的两个半导体裸片互连。每一桥接元件包含支撑悬垂的导电梁式引线的刚性硅裸片。桥接器放置于两个半导体裸片之间的空间中，且每一梁式引线的悬垂程度及相邻定位经选择以提供与定位于要互连的半导体裸片中的每一者上的接合垫的适当配合。然而，未揭示形成梁式引线或将其设置于硅桥接器上的方法。此外，处置并装配梁式引线可能为困难的，且桥接器占据两个裸片之间的空间。另外，由于金为优选互连金属，所以对所装配封装的材料成本有所影响。
因此，需要相邻半导体裸片之间的封装互连系统，所述封装互连系统简化装配过程，减少互连材料的成本，且使芯片之间的互连能够具有比在线接合及等效梁式引线互连的情况下常规所容许的间距更为精细的间距。
发明内容
本发明揭示一种将处于并排配置中的两个裸片互连的系统及方法。第三半导体裸片起连接所述两个裸片的互连桥接器的作用。所述桥接裸片包括促进互连的穿硅通孔(TSV)。
一种集成电路桥接互连系统包括：具有第一面及第二面的第一裸片及具有第一面及第二面的第二裸片。这些裸片是以并排配置提供。桥接裸片设置于所述第一裸片及所述第二裸片的第一面上。所述桥接裸片将所述第一裸片与所述第二裸片互连。
一种集成电路封装系统包括用以容纳半导体裸片的封装及设置于所述封装内的用于接纳半导体裸片的衬底。第一裸片及第二裸片(两者均具有第一面及第二面)是以并排配置设置于所述衬底上。所述第一裸片及第二裸片的第二面面对所述衬底。桥接裸片设置于所述第一裸片及所述第二裸片的第一面上。所述桥接裸片将所述第一裸片与所述第二裸片互连。
前文已颇为广泛地概述本发明的特征及技术优点以便可更好地了解下文的具体实施方式。在下文中将描述本发明的额外特征及优点，其形成本发明的权利要求书的主题。所属领域的技术人员应理解，所揭示的概念及特定实施例可易于用作修改或设计其它结构以用于执行本发明的相同目的的基础。所属领域的技术人员还应认识到，这些等效构造并不背离如在所附的权利要求书中陈述的本发明的精神与范围。当结合附图考虑时，从以下描述可更好地理解据信为本发明所特有的新颖特征(关于其组织及操作方法两方面)以及其它目的及优点。然而应明确了解，仅为了说明及描述的目的而提供所述图中的每一者，且其并不希望作为对本发明的限制的定义。
附图说明
为了对本发明的更完整理解，现在参考结合附图进行的以下描述，附图中：
图1展示示范性无线通信系统，在所述系统中可有利地利用本发明的实施例。
图2说明根据本发明的实施例的TSV桥接互连件的平面图。
图3为两个倒装裸片之间的桥接互连件的实施例的示范性分解横截面图。
图4为两个线接合裸片之间的桥接互连件的实施例的示范性分解横截面图。
图5为倒装裸片与线接合裸片之间的桥接互连件的实施例的示范性分解横截面图。
图6为一实施例的示范性分解横截面图，其中额外裸片堆叠于桥接互连件上。
具体实施方式
揭示用于连接以并排配置放置于以衬底为基础的封装内的两个半导体裸片(芯片)的方法及结构。连接可通过使用半导体互连桥接裸片(通常为硅)与两个并排裸片进行接触来实现。互连桥接裸片具有穿硅通孔以将所述裸片中的每一者上的接触垫连接到所述互连桥接裸片的相对表面。所述互连桥接裸片上的互连线经形成以完成所述穿硅通孔之间的连接。
图1展示示范性无线通信系统100，在所述系统中可有利地利用本发明的实施例。出于说明的目的，图1展示三个远程单元120、130及150以及两个基站140。应认识到，典型无线通信系统可具有多得多的远程单元及基站。远程单元120、130及150包括穿硅通孔(TSV)桥接互连多芯片封装125A、125B及125C，此为如下文进一步论述的本发明的实施例。图1展示从基站140到远程单元120、130及150的前向链路信号180及从远程单元120、130及150到基站140的反向链路信号190。
在图1中，远程单元120经展示为移动电话，远程单元130经展示为便携式计算机，且远程单元150经展示为无线本地环路系统中的固定位置远程单元。举例来说，远程单元可为手机、手持式个人通信系统(PCS)单元、便携式数据单元(例如个人数据助理)或固定位置数据单元(例如仪表读取设备)。尽管图1说明根据本发明的教示的远程单元，但本发明不限于这些示范性的所说明单元。本发明可适当地用于包括具有处于并排配置中的芯片的多芯片封装的任何装置中。
图2说明根据本发明的实施例的TSV桥接互连配置200的平面图。配置200包括衬底210，所述衬底210可为(例如)有机或陶瓷衬底印刷电路板。两个或两个以上裸片(其中每一裸片具有第一面及第二面)可放置于所述衬底210上。为了示范性说明，参看图2，两个裸片220及230经展示以并排配置来放置。裸片220及230的一个表面可连接到衬底210，且最终连接到封装引线。
具有第一面及第二面的桥接互连裸片240至少部分地与裸片220及230重叠且与其电联通。由导电金属填充的穿硅通孔(TSV)270将桥接互连裸片240的第一面(展示为面向页面外)连接到裸片220及230上的有源电路。桥接互连裸片240的第一面上的互连线272接着完成裸片220与230之间的连接。对于其中裸片220及230的特定功能改变的不同的功能应用，可适当地将互连线272重新布线，且可通过光掩模及处于晶片级处理级别的制造的变化来重新定位TSV 270。
另外，虽然互连线272可主要为无源金属互连件，但其还可为更复杂的电路互连件，例如阻抗组件(即，电阻器、电容器及电感器)及有源装置(即，晶体管、逻辑、存储器等)。尽管图2中未展示，但桥接互连裸片240的第一面可包括与互连功能性无关的额外的有源电路。
可在晶片级上形成桥接互连裸片240上的互连线272及/或电路(包括使用常规的半导体及金属化工艺形成金属填充孔TSV 270)，在此之后可接着将晶片分成个别的桥接互连裸片240。
图3为两个倒装裸片之间的桥接互连件的配置300的实施例的示范性分解横截面图。倒装裸片320及裸片330的有源电路在第二面上，面对衬底210。裸片320及330可通过(例如)焊球接合或在封装集成电路中所使用的等效方法而附接到衬底210。
穿硅通孔(TSV)373是穿过裸片320及330的厚度而形成以提供第一面(在图2中展示为面朝上)与裸片320及330的第二面上的有源电路之间的金属互连件。
桥接互连裸片240的第二面上与裸片320及330的第一面上的接触垫371经对准，且可使用例如焊球接合及导电膏等方法予以接合。形成于裸片320、330及240上的接触垫371实现对应的TSV 270与373之间的导电接触。因此，裸片320及330上的有源电路被电连接到桥接互连裸片240的第一面，其中有源电路之间的互连是使用互连线272来完成。接触垫371被展示为将有源电路与焊球互连。
图4为两个线接合裸片420与430之间的桥接互连件的配置400的实施例的示范性分解横截面图。桥接互连裸片240可与图3中所示的桥接互连裸片240大体上相同。即，图4的桥接互连裸片240可具有TSV 270、接触垫371、互连线272及(任选地)也放置于图3的桥接互连裸片240的第一面上的阻抗元件及/或有源装置的相同的特征以及布置。
半导体线接合裸片420及430两者均具有第一面及第二面，其中裸片420及430的第二面面对衬底210且附接到衬底210。线接合将裸片420及430的第一面上的接触垫连接到衬底210上的接触垫。如同图3的倒装配置300中一样，所有三个裸片420、430及240在对应的位置处具有接触垫371以实现裸片420与430的电路经由桥接互连裸片240的互连。
裸片420及430上的有源电路位于第一表面上(即，背对衬底210)。在配置400中，由于有源电路在第一面上，所以可能任选地包括或可能并不需要在裸片420及430中包括TSV 373(如图4中所示)。
图5为倒装裸片320与线接合裸片430之间的桥接互连件的配置500的实施例的示范性分解横截面图。可对裸片厚度、球形接合高度等的相对差异进行适当补偿以将两个裸片320及430的第一面定位于同一高度。对倒装裸片、桥接裸片与线接合裸片之间的适当介接的考虑与参看图3及4所描述的相同。举例来说，倒装裸片320具有设置于第二面上(即，面对衬底210)的有源电路，且可能需要连接到第一面上的接触垫371的多个TSV 373以促进到所述桥接互连裸片240的连接。另一方面，线接合裸片430具有设置于第一面上(即，背对衬底210)的有源电路，且可能不需要TSV 373。实情为，连接到有源电路的接触垫371可为足够的。
图6为配置600的实施例的示范性横截面图，其中至少一个或一个以上额外裸片640(其中，出于说明目的，仅展示一个裸片640)堆叠于桥接互连裸片240上。额外裸片640可包括功能性、材料技术或其它用于与含有有源装置的其它裸片320、430分离地形成裸片640的基础。互连桥接裸片240可包括第一面上的接触垫371以与在对面且位于裸片640上的对应的接触垫371介接。裸片640可包括连接到裸片640的两面上的接触垫371的TSV 674以提供互连桥接裸片240与裸片640的顶表面上的互连线672及/或功能电路之间的互连。裸片640的功能性的实例包括存储器、延迟、放大器、逻辑等。可根据功能性、封装及其它所要目标来考虑额外裸片640在互连桥接裸片240上的堆叠。在使用球形接合将(垂直堆叠的)相邻裸片上的垫互连的情况下，电路的部署可在裸片640的第一面或第二面上。
可从所描述的实施例中得到众多优点。如果使用桥接裸片，可使用半导体工艺在晶片级上大量地制造互连迹线。金属化厚度可为大约几微米或更小，其中线宽度适合于不断进步的技术节点，例如45nm及更小。金属可能并非金。与衬底之间的金线接合相比较，可实现实质性材料节省。
此外，因为至少部分地归因于线接合中所使用的毛细尖端的大小的原因，线接合需要衬底上的相邻接触垫之间的最小间隔。相比之下，桥接裸片上的互连迹线的极精细的间距为可能的，从而使密集互连成为可能。另外，在线接合的情况下，每一接合是个别地完成，而在桥接互连的情况下，是通过一个芯片级放置及例如回焊等接合方法来完成多个接合。
另外，在先前已针对线接合而设计并排多芯片配置的情况下，在利用现有接触垫的同时可有利地实施桥接互连以代替线接合。桥接互连对线接合的代替将装配步骤的数目从多个单独的线接合步骤减少为单一裸片放置。
再另外，除了接合垫之间的最小所需距离之外，线接合通常还涉及两个接合垫之间的线的电弧中的环路。因此，线电感可能会使性能降级，特别是在电感阻抗随频率而增加的高速装置中。在封装内的芯片上的其它地方可能不合意地检测到来自引线的电磁辐射。在桥接裸片的情况下，要连接的裸片可被放置成紧靠在一起，从而减少辐射且增加封装利用效率。可将桥接裸片制作得相当小，从而具有对应地比在线接合的情况下将会需要的互连路径短的互连路径。
又一优点是能够有效地在单一封装中包括两个或两个以上集成电路(其需要不同的材料、工艺流程或技术节点)以使由每一芯片的经定制益处提供的“系统级别”性能最优化。此实现了单一封装中的更高级别的功能性。
再一优点为能够在桥接裸片上包括功能性，其无法由线接合独自实现。
当使用倒装接合以封装集成电路裸片时，许多相同的优点适用。通过在倒装裸片上实施TSV，可实现精细间距互连及布线空间的经济性。
虽然已详细描述了本发明及其优点，但应了解，在不背离如由所附的权利要求书界定的本发明的精神与范围的情况下，可在本文中进行各种改变、替代及更改。举例来说，虽然已在论述中使用读取操作，但可预见，本发明同样适用于写入操作。此外，本申请案的范围不希望限于说明书中所描述的工艺、机器、制造、物质组成、手段、方法及步骤的特定实施例。举例来说，尽管TSV为指代硅裸片中的通孔的常用技术术语，但通孔可形成于其它材料中，且确切地说形成于例如GaAs、SiC、GaN或其它适当材料的其它半导体裸片中。当应用于任何这些材料时，术语TSV可适用。如所属领域的技术人员将易于从本发明的揭示内容理解，根据本发明，可利用当前存在或日后将开发的执行与本文中描述的对应实施例大体上相同功能或实现大体上相同结果的工艺、机器、制造、物质组成、手段、方法或步骤。因此，所附的权利要求书希望在其范围内包括这些工艺、机器、制造、物质组成、手段、方法或步骤。

Claims (20)

1.一种集成电路桥接互连系统，其包含：
具有第一面及第二面的第一裸片；
具有第一面及第二面的第二裸片，其是与所述第一裸片以并排配置提供；以及
具有第一面及第二面的桥接裸片，其至少部分地设置于所述第一裸片及所述第二裸片的所述第一面上，所述桥接裸片将所述第一裸片与所述第二裸片电互连。
2.根据权利要求1所述的系统，其中所述桥接裸片包含从所述桥接裸片的所述第一面到所述桥接裸片的所述第二面的桥接裸片穿硅通孔(TSV)，所述桥接裸片TSV是由金属化予以填充以连接所述桥接裸片的所述第一面上的导线以便实现所述互连。
3.根据权利要求2所述的系统，其中所述桥接裸片进一步包含所述第一面上的有源电路。
4.根据权利要求2所述的系统，其中所述桥接裸片的所述第二面上的一个或一个以上接触垫接触所述第一裸片及第二裸片的所述第一面上的对应的一个或一个以上接触垫。
5.根据权利要求2所述的系统，其中所述第一裸片及第二裸片中的至少一者包含：
具有设置于所述第二面上的电路的倒装裸片；以及
从所述倒装裸片的所述第一面到所述倒装裸片的所述第二面的倒装TSV，所述倒装TSV是由金属化予以填充以将所述倒装裸片的所述第二面上的有源电路连接到所述倒装裸片的所述第一面上的一个或一个以上接触垫。
6.根据权利要求2所述的系统，其中所述第一裸片及第二裸片中的至少一者包含设置于所述裸片的所述第一面上的电路。
7.根据权利要求2所述的系统，其进一步包含：
所述第一裸片及所述第二裸片上的一个或一个以上接触垫。
8.根据权利要求7所述的系统，其中所述桥接裸片进一步包含：
所述桥接裸片的所述第二面上的一个或一个以上接触垫，其对应于所述桥接裸片TSV且与所述第一及/或第二裸片第一面上的所述一个或一个以上接触垫相对并对应于所述一个或一个以上接触垫。
9.根据权利要求8所述的系统，其进一步包含：
堆叠于所述桥接裸片上的至少一个额外裸片，所述至少一个额外裸片进一步包含无源、有源及/或互连电路。
10.根据权利要求1所述的系统，其中所述桥接裸片是使用与对应于所述第一及/或所述第二裸片的工艺流程不同的工艺流程予以制造。
11.一种集成电路封装系统，其包含：
用以容纳半导体裸片的封装；
设置于所述封装内的用于接纳半导体裸片的衬底；
具有第一面及第二面的第一裸片，其中所述第一裸片以所述第二面面对所述衬底的方式设置于所述衬底上；
具有第一面及第二面的第二裸片，其是与所述第一裸片以并排配置提供，其中所述第二裸片以所述第二面面对所述衬底的方式设置于所述衬底上；以及
具有第一面及第二面的桥接裸片，其中所述桥接裸片是至少部分地设置于所述第一裸片及所述第二裸片的所述第一面上，所述桥接裸片将所述第一裸片与所述第二裸片互连。
12.根据权利要求11所述的封装系统，其中所述桥接裸片包含从所述桥接裸片的所述第一面到所述桥接裸片的所述第二面的桥接裸片穿硅通孔(TSV)，所述桥接裸片TSV是由金属化予以填充以连接所述桥接裸片的所述第一面上的导线以便实现所述互连。
13.根据权利要求12所述的封装系统，其中所述桥接裸片进一步包含所述第一面上的有源电路。
14.根据权利要求12所述的封装系统，其中所述桥接裸片的所述第二面上的一个或一个以上接触垫接触所述第一裸片及第二裸片的所述第一面上的对应的一个或一个以上接触垫。
15.根据权利要求12所述的封装系统，其中所述第一裸片及第二裸片中的至少一者包含：
具有设置于所述第二面上的电路的倒装裸片，其中所述倒装芯片是通过球形接合、焊料凸块接合或导电膏耦合到所述衬底；
从所述倒装裸片的所述第一面到所述第二面的倒装TSV；且
所述倒装TSV是由金属化予以填充以将所述第二面上的导线连接到所述倒装裸片的所述第一面上的一个或一个以上接触垫。
16.根据权利要求12所述的封装系统，其中所述第一裸片及第二裸片中的至少一者包含设置于所述裸片的所述第一面上的电路。
17.根据权利要求12所述的封装系统，其进一步包含：
各具有一个或一个以上接触垫的所述第一裸片及所述第二裸片。
18.根据权利要求17所述的封装系统，其中所述桥接裸片进一步包含：
所述桥接裸片的所述第二面上的一个或一个以上接触垫，其对应于所述桥接裸片TSV且与所述第一及/或第二裸片第一面上的所述一个或一个以上接触垫相对并对应于所述一个或一个以上接触垫。
19.根据权利要求18所述的封装系统，其进一步包含：
堆叠于所述桥接裸片上的至少一个额外裸片，所述至少一个额外裸片进一步包含无源、有源及/或互连电路。
20.根据权利要求11所述的封装系统，其中所述桥接裸片是使用与对应于所述第一及/或所述第二裸片的工艺流程不同的工艺流程予以制造。
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