CN102047444A - 半导体器件、反射光势垒和用于制造对此的壳体的方法 - Google Patents

半导体器件、反射光势垒和用于制造对此的壳体的方法 Download PDF

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Publication number
CN102047444A
CN102047444A CN2009801194497A CN200980119449A CN102047444A CN 102047444 A CN102047444 A CN 102047444A CN 2009801194497 A CN2009801194497 A CN 2009801194497A CN 200980119449 A CN200980119449 A CN 200980119449A CN 102047444 A CN102047444 A CN 102047444A
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CN
China
Prior art keywords
semiconductor chip
cavity
housing
semiconductor
radiation
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Pending
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CN2009801194497A
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English (en)
Chinese (zh)
Inventor
迈克尔·齐茨尔斯佩格
托马斯·蔡勒
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of CN102047444A publication Critical patent/CN102047444A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01V—GEOPHYSICS; GRAVITATIONAL MEASUREMENTS; DETECTING MASSES OR OBJECTS; TAGS
    • G01V8/00—Prospecting or detecting by optical means
    • G01V8/10—Detecting, e.g. by using light barriers
    • G01V8/12—Detecting, e.g. by using light barriers using one transmitter and one receiver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers

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  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Geophysics (AREA)
  • Led Device Packages (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optical Radar Systems And Details Thereof (AREA)
CN2009801194497A 2008-05-26 2009-04-17 半导体器件、反射光势垒和用于制造对此的壳体的方法 Pending CN102047444A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008025159A DE102008025159A1 (de) 2008-05-26 2008-05-26 Halbleiterbauelement, Reflexlichtschranke und Verfahren zur Herstellung eines Gehäuses
DE102008025159.3 2008-05-26
PCT/DE2009/000545 WO2009143797A1 (de) 2008-05-26 2009-04-17 Halbleiterbauelement, reflexlichtschranke und verfahren zur herstellung eines gehäuses dafür

Publications (1)

Publication Number Publication Date
CN102047444A true CN102047444A (zh) 2011-05-04

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ID=41066143

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009801194497A Pending CN102047444A (zh) 2008-05-26 2009-04-17 半导体器件、反射光势垒和用于制造对此的壳体的方法

Country Status (7)

Country Link
US (1) US9165913B2 (https=)
EP (1) EP2279533B1 (https=)
JP (1) JP2011523508A (https=)
KR (1) KR20110015550A (https=)
CN (1) CN102047444A (https=)
DE (1) DE102008025159A1 (https=)
WO (1) WO2009143797A1 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103608922A (zh) * 2011-06-22 2014-02-26 欧司朗光电半导体有限公司 用于在复合结构中制造多个光电子半导体器件的方法、这样制造的半导体器件及其应用
CN103608922B (zh) * 2011-06-22 2016-11-30 欧司朗光电半导体有限公司 用于在复合结构中制造多个光电子半导体器件的方法、这样制造的半导体器件及其应用
CN106449437A (zh) * 2016-08-30 2017-02-22 张为凤 一种光电子半导体器件的制造方法
CN106449543A (zh) * 2016-08-30 2017-02-22 张为凤 一种光电子半导体器件

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DE102009058006B4 (de) * 2009-12-11 2022-03-31 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauteil
DE102010012712A1 (de) * 2010-03-25 2011-09-29 Osram Opto Semiconductors Gmbh Licht emittierendes Halbleiterbauteil
DE102010038186A1 (de) * 2010-10-14 2012-04-19 Sick Ag Optoelektronischer Sensor mit Linienanordnung von Einzelemittern
DE102010053809A1 (de) * 2010-12-08 2012-06-14 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement, Verfahren zu dessen Herstellung und Verwendung eines derartigen Bauelements
US8809897B2 (en) 2011-08-31 2014-08-19 Micron Technology, Inc. Solid state transducer devices, including devices having integrated electrostatic discharge protection, and associated systems and methods
US9490239B2 (en) 2011-08-31 2016-11-08 Micron Technology, Inc. Solid state transducers with state detection, and associated systems and methods
RU2618902C2 (ru) 2011-12-08 2017-05-11 Алькон Рисерч, Лтд. Селективно перемещаемые клапаны для контуров аспирации и ирригации
DE102012101573B3 (de) * 2012-02-27 2013-05-08 Sick Ag Reflektor für einen optoelektronischen Sensor
US9549850B2 (en) 2013-04-26 2017-01-24 Novartis Ag Partial venting system for occlusion surge mitigation
TWI521671B (zh) * 2013-07-25 2016-02-11 菱生精密工業股份有限公司 The package structure of the optical module
US10403671B2 (en) * 2013-12-10 2019-09-03 Ams Sensors Singapore Pte. Ltd. Wafer-level optical modules and methods for manufacturing the same
DE102016113514A1 (de) * 2016-07-21 2018-01-25 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil
DE102016213980A1 (de) * 2016-07-29 2018-02-01 Robert Bosch Gmbh Optische Anordnung für ein LiDAR-System, LiDAR-System und Arbeitsvorrichtung
DE112017007111B4 (de) * 2017-02-23 2024-01-25 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Sensorelement
CN108198870B (zh) * 2018-01-09 2019-10-22 北京永安多谱检测科技有限公司 一种光探测器
JP2022010580A (ja) * 2020-06-29 2022-01-17 京セラ株式会社 近接センサ用パッケージ、近接センサ及び電子モジュール
WO2022028226A1 (zh) 2020-08-06 2022-02-10 佛山市顺德区美的饮水机制造有限公司 取水设备、取水设备的控制方法

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US4309605A (en) * 1979-10-02 1982-01-05 New Japan Radio Co., Ltd. Photo-reflective sensor
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ES2150409T3 (es) 1989-05-31 2000-12-01 Osram Opto Semiconductors Gmbh Procedimiento para montar un opto-componente que se puede montar sobre una superficie.
US5291038A (en) 1990-12-19 1994-03-01 Sharp Kabushiki Kaisha Reflective type photointerrupter
JPH04252082A (ja) * 1991-01-10 1992-09-08 Sharp Corp 光結合装置
US5340993A (en) * 1993-04-30 1994-08-23 Motorola, Inc. Optocoupler package wth integral voltage isolation barrier
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TW418422B (en) 1998-05-20 2001-01-11 Rohm Co Ltd Reflection-type sensor
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DE10214121C1 (de) * 2002-03-28 2003-12-24 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit mehreren Halbleiterchips
US6876008B2 (en) * 2003-07-31 2005-04-05 Lumileds Lighting U.S., Llc Mount for semiconductor light emitting device
JP4175651B2 (ja) * 2003-10-10 2008-11-05 松下電器産業株式会社 光学デバイス
JP2006032566A (ja) * 2004-07-14 2006-02-02 Sanyo Electric Co Ltd 受発光素子モジュール、受光素子モジュール、及び発光素子モジュール
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JP2006108294A (ja) * 2004-10-04 2006-04-20 New Japan Radio Co Ltd チップ型ホトリフレクタおよびその製造方法
US7652244B2 (en) * 2004-10-05 2010-01-26 Finisar Corporation Combined laser transmitter and photodetector receiver package
DE102005061798A1 (de) 2005-09-30 2007-04-05 Osram Opto Semiconductors Gmbh Beleuchtungsanordnung
JP5192646B2 (ja) * 2006-01-16 2013-05-08 Ｔｏｗａ株式会社 光素子の樹脂封止方法、その樹脂封止装置、および、その製造方法
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JP4858032B2 (ja) * 2006-09-15 2012-01-18 日亜化学工業株式会社 発光装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103608922A (zh) * 2011-06-22 2014-02-26 欧司朗光电半导体有限公司 用于在复合结构中制造多个光电子半导体器件的方法、这样制造的半导体器件及其应用
US9269848B2 (en) 2011-06-22 2016-02-23 Osram Opto Semiconductors Gmbh Method for producing a plurality of optoelectronic semiconductor components in combination, semiconductor component produced in such a way, and use of said semiconductor component
CN103608922B (zh) * 2011-06-22 2016-11-30 欧司朗光电半导体有限公司 用于在复合结构中制造多个光电子半导体器件的方法、这样制造的半导体器件及其应用
CN106449437A (zh) * 2016-08-30 2017-02-22 张为凤 一种光电子半导体器件的制造方法
CN106449543A (zh) * 2016-08-30 2017-02-22 张为凤 一种光电子半导体器件

Also Published As

Publication number Publication date
KR20110015550A (ko) 2011-02-16
WO2009143797A1 (de) 2009-12-03
EP2279533A1 (de) 2011-02-02
US9165913B2 (en) 2015-10-20
US20110266559A1 (en) 2011-11-03
DE102008025159A1 (de) 2009-12-10
JP2011523508A (ja) 2011-08-11
EP2279533B1 (de) 2019-01-09

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Application publication date: 20110504