KR20110015550A - 반도체 소자, 반사광 배리어 및 그를 위한 하우징 제조 방법 - Google Patents

반도체 소자, 반사광 배리어 및 그를 위한 하우징 제조 방법 Download PDF

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Publication number
KR20110015550A
KR20110015550A KR1020107025555A KR20107025555A KR20110015550A KR 20110015550 A KR20110015550 A KR 20110015550A KR 1020107025555 A KR1020107025555 A KR 1020107025555A KR 20107025555 A KR20107025555 A KR 20107025555A KR 20110015550 A KR20110015550 A KR 20110015550A
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KR
South Korea
Prior art keywords
housing
semiconductor chip
cavity
semiconductor
light barrier
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KR1020107025555A
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English (en)
Korean (ko)
Inventor
마이클 지트즐스퍼거
토마스 제일러
Original Assignee
오스람 옵토 세미컨덕터스 게엠베하
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Publication of KR20110015550A publication Critical patent/KR20110015550A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01V—GEOPHYSICS; GRAVITATIONAL MEASUREMENTS; DETECTING MASSES OR OBJECTS; TAGS
    • G01V8/00—Prospecting or detecting by optical means
    • G01V8/10—Detecting, e.g. by using light barriers
    • G01V8/12—Detecting, e.g. by using light barriers using one transmitter and one receiver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers

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  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Geophysics (AREA)
  • Led Device Packages (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optical Radar Systems And Details Thereof (AREA)
KR1020107025555A 2008-05-26 2009-04-17 반도체 소자, 반사광 배리어 및 그를 위한 하우징 제조 방법 Withdrawn KR20110015550A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008025159A DE102008025159A1 (de) 2008-05-26 2008-05-26 Halbleiterbauelement, Reflexlichtschranke und Verfahren zur Herstellung eines Gehäuses
DE102008025159.3 2008-05-26

Publications (1)

Publication Number Publication Date
KR20110015550A true KR20110015550A (ko) 2011-02-16

Family

ID=41066143

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107025555A Withdrawn KR20110015550A (ko) 2008-05-26 2009-04-17 반도체 소자, 반사광 배리어 및 그를 위한 하우징 제조 방법

Country Status (7)

Country Link
US (1) US9165913B2 (https=)
EP (1) EP2279533B1 (https=)
JP (1) JP2011523508A (https=)
KR (1) KR20110015550A (https=)
CN (1) CN102047444A (https=)
DE (1) DE102008025159A1 (https=)
WO (1) WO2009143797A1 (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009058006B4 (de) * 2009-12-11 2022-03-31 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauteil
DE102010012712A1 (de) * 2010-03-25 2011-09-29 Osram Opto Semiconductors Gmbh Licht emittierendes Halbleiterbauteil
DE102010038186A1 (de) * 2010-10-14 2012-04-19 Sick Ag Optoelektronischer Sensor mit Linienanordnung von Einzelemittern
DE102010053809A1 (de) * 2010-12-08 2012-06-14 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement, Verfahren zu dessen Herstellung und Verwendung eines derartigen Bauelements
DE102011105374B4 (de) 2011-06-22 2021-12-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen einer Mehrzahl von optoelektronischen Halbleiterbauelementen im Verbund
US8809897B2 (en) 2011-08-31 2014-08-19 Micron Technology, Inc. Solid state transducer devices, including devices having integrated electrostatic discharge protection, and associated systems and methods
US9490239B2 (en) 2011-08-31 2016-11-08 Micron Technology, Inc. Solid state transducers with state detection, and associated systems and methods
RU2618902C2 (ru) 2011-12-08 2017-05-11 Алькон Рисерч, Лтд. Селективно перемещаемые клапаны для контуров аспирации и ирригации
DE102012101573B3 (de) * 2012-02-27 2013-05-08 Sick Ag Reflektor für einen optoelektronischen Sensor
US9549850B2 (en) 2013-04-26 2017-01-24 Novartis Ag Partial venting system for occlusion surge mitigation
TWI521671B (zh) * 2013-07-25 2016-02-11 菱生精密工業股份有限公司 The package structure of the optical module
US10403671B2 (en) * 2013-12-10 2019-09-03 Ams Sensors Singapore Pte. Ltd. Wafer-level optical modules and methods for manufacturing the same
DE102016113514A1 (de) * 2016-07-21 2018-01-25 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil
DE102016213980A1 (de) * 2016-07-29 2018-02-01 Robert Bosch Gmbh Optische Anordnung für ein LiDAR-System, LiDAR-System und Arbeitsvorrichtung
CN106449543A (zh) * 2016-08-30 2017-02-22 张为凤 一种光电子半导体器件
CN106449437A (zh) * 2016-08-30 2017-02-22 张为凤 一种光电子半导体器件的制造方法
DE112017007111B4 (de) * 2017-02-23 2024-01-25 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Sensorelement
CN108198870B (zh) * 2018-01-09 2019-10-22 北京永安多谱检测科技有限公司 一种光探测器
JP2022010580A (ja) * 2020-06-29 2022-01-17 京セラ株式会社 近接センサ用パッケージ、近接センサ及び電子モジュール
WO2022028226A1 (zh) 2020-08-06 2022-02-10 佛山市顺德区美的饮水机制造有限公司 取水设备、取水设备的控制方法

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2656185A1 (de) 1976-12-11 1978-06-15 Licentia Gmbh Reflexionslichtschranke aus einem lumineszenz-halbleiterbauelement und einem fotobauelement in einem gemeinsamen gehaeuse
US4309605A (en) * 1979-10-02 1982-01-05 New Japan Radio Co., Ltd. Photo-reflective sensor
US4285730A (en) * 1979-10-05 1981-08-25 Corning Glass Works Moldable glasses
JPS5893388A (ja) 1981-11-30 1983-06-03 New Japan Radio Co Ltd 反射型光結合半導体装置の製造方法
ES2150409T3 (es) 1989-05-31 2000-12-01 Osram Opto Semiconductors Gmbh Procedimiento para montar un opto-componente que se puede montar sobre una superficie.
US5291038A (en) 1990-12-19 1994-03-01 Sharp Kabushiki Kaisha Reflective type photointerrupter
JPH04252082A (ja) * 1991-01-10 1992-09-08 Sharp Corp 光結合装置
US5340993A (en) * 1993-04-30 1994-08-23 Motorola, Inc. Optocoupler package wth integral voltage isolation barrier
JP3261280B2 (ja) * 1994-09-08 2002-02-25 シャープ株式会社 反射型フォトインタラプタおよびその製造方法
DE19600678A1 (de) * 1996-01-10 1997-07-24 Siemens Ag Optoelektronisches Halbleiter-Bauelement
JPH11204827A (ja) * 1998-01-13 1999-07-30 Sharp Corp 光結合装置
TW418422B (en) 1998-05-20 2001-01-11 Rohm Co Ltd Reflection-type sensor
JP2001156325A (ja) 1999-11-29 2001-06-08 Citizen Electronics Co Ltd フォトリフレクター
JP4034062B2 (ja) * 2001-10-25 2008-01-16 シャープ株式会社 光結合装置のリードフレーム及び光結合装置の製造方法
DE10214121C1 (de) * 2002-03-28 2003-12-24 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit mehreren Halbleiterchips
US6876008B2 (en) * 2003-07-31 2005-04-05 Lumileds Lighting U.S., Llc Mount for semiconductor light emitting device
JP4175651B2 (ja) * 2003-10-10 2008-11-05 松下電器産業株式会社 光学デバイス
JP2006032566A (ja) * 2004-07-14 2006-02-02 Sanyo Electric Co Ltd 受発光素子モジュール、受光素子モジュール、及び発光素子モジュール
JP2006038572A (ja) * 2004-07-26 2006-02-09 Sharp Corp 反射型エンコーダおよびこの反射型エンコーダを用いた電子機器
JP2006108294A (ja) * 2004-10-04 2006-04-20 New Japan Radio Co Ltd チップ型ホトリフレクタおよびその製造方法
US7652244B2 (en) * 2004-10-05 2010-01-26 Finisar Corporation Combined laser transmitter and photodetector receiver package
DE102005061798A1 (de) 2005-09-30 2007-04-05 Osram Opto Semiconductors Gmbh Beleuchtungsanordnung
JP5192646B2 (ja) * 2006-01-16 2013-05-08 Ｔｏｗａ株式会社 光素子の樹脂封止方法、その樹脂封止装置、および、その製造方法
DE102006016523A1 (de) 2006-04-07 2007-10-11 Osram Opto Semiconductors Gmbh Kippsensor
KR101134752B1 (ko) * 2006-07-14 2012-04-13 엘지이노텍 주식회사 Ｌｅｄ 패키지
JP4858032B2 (ja) * 2006-09-15 2012-01-18 日亜化学工業株式会社 発光装置

Also Published As

Publication number Publication date
CN102047444A (zh) 2011-05-04
WO2009143797A1 (de) 2009-12-03
EP2279533A1 (de) 2011-02-02
US9165913B2 (en) 2015-10-20
US20110266559A1 (en) 2011-11-03
DE102008025159A1 (de) 2009-12-10
JP2011523508A (ja) 2011-08-11
EP2279533B1 (de) 2019-01-09

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PA0105 International application

Patent event date: 20101115

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid