CN101974335B - 通过表面处理改善半导体纳米晶体的发光效率 - Google Patents
通过表面处理改善半导体纳米晶体的发光效率 Download PDFInfo
- Publication number
- CN101974335B CN101974335B CN2010102698293A CN201010269829A CN101974335B CN 101974335 B CN101974335 B CN 101974335B CN 2010102698293 A CN2010102698293 A CN 2010102698293A CN 201010269829 A CN201010269829 A CN 201010269829A CN 101974335 B CN101974335 B CN 101974335B
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- Prior art keywords
- nanocrystal
- semiconductor nanocrystal
- surface treatment
- solvent
- phosphonic acids
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- 239000004054 semiconductor nanocrystal Substances 0.000 title claims abstract description 41
- 238000004381 surface treatment Methods 0.000 title claims abstract description 33
- 230000006872 improvement Effects 0.000 title abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 43
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 30
- 239000002904 solvent Substances 0.000 claims description 27
- 239000003795 chemical substances by application Substances 0.000 claims description 22
- 230000002829 reductive effect Effects 0.000 claims description 20
- 150000001875 compounds Chemical class 0.000 claims description 18
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 13
- 230000009467 reduction Effects 0.000 claims description 9
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 claims description 7
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 claims description 7
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 claims description 7
- 239000005642 Oleic acid Substances 0.000 claims description 7
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 claims description 7
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 claims description 7
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid group Chemical group C(CCCCCCC\C=C/CCCCCCCC)(=O)O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 claims description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 6
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 6
- 239000002270 dispersing agent Substances 0.000 claims description 5
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 4
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 4
- -1 alkenyl amine Chemical class 0.000 claims description 4
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 claims description 4
- 150000003839 salts Chemical class 0.000 claims description 4
- FJLUATLTXUNBOT-UHFFFAOYSA-N 1-Hexadecylamine Chemical compound CCCCCCCCCCCCCCCCN FJLUATLTXUNBOT-UHFFFAOYSA-N 0.000 claims description 3
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims description 3
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 claims description 3
- 239000012448 Lithium borohydride Substances 0.000 claims description 3
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical class OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 claims description 3
- 235000021355 Stearic acid Nutrition 0.000 claims description 3
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims description 3
- IPCSVZSSVZVIGE-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 claims description 3
- GJWAEWLHSDGBGG-UHFFFAOYSA-N hexylphosphonic acid Chemical class CCCCCCP(O)(O)=O GJWAEWLHSDGBGG-UHFFFAOYSA-N 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 229910000037 hydrogen sulfide Inorganic materials 0.000 claims description 3
- 239000012280 lithium aluminium hydride Substances 0.000 claims description 3
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 claims description 3
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 claims description 3
- FTMKAMVLFVRZQX-UHFFFAOYSA-N octadecylphosphonic acid Chemical class CCCCCCCCCCCCCCCCCCP(O)(O)=O FTMKAMVLFVRZQX-UHFFFAOYSA-N 0.000 claims description 3
- IOQPZZOEVPZRBK-UHFFFAOYSA-N octan-1-amine Chemical compound CCCCCCCCN IOQPZZOEVPZRBK-UHFFFAOYSA-N 0.000 claims description 3
- NJGCRMAPOWGWMW-UHFFFAOYSA-N octylphosphonic acid Chemical class CCCCCCCCP(O)(O)=O NJGCRMAPOWGWMW-UHFFFAOYSA-N 0.000 claims description 3
- 239000012279 sodium borohydride Substances 0.000 claims description 3
- 229910000033 sodium borohydride Inorganic materials 0.000 claims description 3
- 239000008117 stearic acid Substances 0.000 claims description 3
- BVQJQTMSTANITJ-UHFFFAOYSA-N tetradecylphosphonic acid Chemical class CCCCCCCCCCCCCCP(O)(O)=O BVQJQTMSTANITJ-UHFFFAOYSA-N 0.000 claims description 3
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical class CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 2
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 239000002159 nanocrystal Substances 0.000 abstract description 90
- 238000009826 distribution Methods 0.000 abstract description 7
- 238000004020 luminiscence type Methods 0.000 abstract description 7
- 239000003638 chemical reducing agent Substances 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 description 26
- 239000000203 mixture Substances 0.000 description 21
- 239000002243 precursor Substances 0.000 description 19
- 239000000463 material Substances 0.000 description 15
- 238000003756 stirring Methods 0.000 description 12
- 238000002360 preparation method Methods 0.000 description 11
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 9
- 230000008859 change Effects 0.000 description 9
- 239000013078 crystal Substances 0.000 description 9
- 238000000103 photoluminescence spectrum Methods 0.000 description 9
- 238000007704 wet chemistry method Methods 0.000 description 9
- 239000006185 dispersion Substances 0.000 description 8
- 239000011541 reaction mixture Substances 0.000 description 8
- 238000006722 reduction reaction Methods 0.000 description 8
- 229910004613 CdTe Inorganic materials 0.000 description 7
- 239000011162 core material Substances 0.000 description 7
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000003960 organic solvent Substances 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- XTAZYLNFDRKIHJ-UHFFFAOYSA-N n,n-dioctyloctan-1-amine Chemical compound CCCCCCCCN(CCCCCCCC)CCCCCCCC XTAZYLNFDRKIHJ-UHFFFAOYSA-N 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 239000011257 shell material Substances 0.000 description 5
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 238000010992 reflux Methods 0.000 description 4
- 230000027756 respiratory electron transport chain Effects 0.000 description 4
- 238000005070 sampling Methods 0.000 description 4
- MJNSMKHQBIVKHV-UHFFFAOYSA-N selenium;trioctylphosphane Chemical compound [Se].CCCCCCCCP(CCCCCCCC)CCCCCCCC MJNSMKHQBIVKHV-UHFFFAOYSA-N 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 150000003973 alkyl amines Chemical class 0.000 description 3
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 3
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 239000002096 quantum dot Substances 0.000 description 3
- VVJKKWFAADXIJK-UHFFFAOYSA-N Allylamine Chemical compound NCC=C VVJKKWFAADXIJK-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910004262 HgTe Inorganic materials 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 239000005864 Sulphur Substances 0.000 description 2
- 229910007709 ZnTe Inorganic materials 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 239000011258 core-shell material Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- RMZAYIKUYWXQPB-UHFFFAOYSA-N trioctylphosphane Chemical compound CCCCCCCCP(CCCCCCCC)CCCCCCCC RMZAYIKUYWXQPB-UHFFFAOYSA-N 0.000 description 2
- GKWLILHTTGWKLQ-UHFFFAOYSA-N 2,3-dihydrothieno[3,4-b][1,4]dioxine Chemical compound O1CCOC2=CSC=C21 GKWLILHTTGWKLQ-UHFFFAOYSA-N 0.000 description 1
- 229910000967 As alloy Inorganic materials 0.000 description 1
- 229910016036 BaF 2 Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical compound C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 description 1
- 238000003917 TEM image Methods 0.000 description 1
- 241001455273 Tetrapoda Species 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000003849 aromatic solvent Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- LHQLJMJLROMYRN-UHFFFAOYSA-L cadmium acetate Chemical compound [Cd+2].CC([O-])=O.CC([O-])=O LHQLJMJLROMYRN-UHFFFAOYSA-L 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- JRBPAEWTRLWTQC-UHFFFAOYSA-N dodecylamine Chemical compound CCCCCCCCCCCCN JRBPAEWTRLWTQC-UHFFFAOYSA-N 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 150000004678 hydrides Chemical group 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 239000012454 non-polar solvent Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- AUONHKJOIZSQGR-UHFFFAOYSA-N oxophosphane Chemical compound P=O AUONHKJOIZSQGR-UHFFFAOYSA-N 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 1
- 229920001197 polyacetylene Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000001149 thermolysis Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
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- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B19/00—Selenium; Tellurium; Compounds thereof
- C01B19/007—Tellurides or selenides of metals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- C09C1/00—Treatment of specific inorganic materials other than fibrous fillers; Preparation of carbon black
- C09C1/10—Compounds of cadmium
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- C09C1/00—Treatment of specific inorganic materials other than fibrous fillers; Preparation of carbon black
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- C09C1/00—Treatment of specific inorganic materials other than fibrous fillers; Preparation of carbon black
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
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- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/56—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing sulfur
- C09K11/562—Chalcogenides
- C09K11/565—Chalcogenides with zinc cadmium
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
- C09K11/881—Chalcogenides
- C09K11/883—Chalcogenides with zinc or cadmium
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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Abstract
一种改善半导体纳米晶体发光效率的方法,通过用还原剂表面处理改善发光效率和量子效率,不改变纳米晶体的发光特性例如发光波长和其分布。
Description
本申请是中国发明申请(发明名称:通过表面处理改善半导体纳米晶体的发光效率,申请日:2004年9月9日;申请号:200410078547.X)的分案申请。
该非临时申请根据35U.S.C.§119(a)要求2003年9月9日提交的韩国专利申请No.2003-63229的优先权,该专利申请在此引入作为参考。
技术领域
本发明涉及通过表面处理改善半导体纳米晶体的发光效率,更具体地涉及一种改善由湿法化学方法制备的半导体纳米晶体发光效率,不改变纳米晶体的发光特性例如发光波长和其分布的方法。
背景技术
当把半导体化合物材料制成纳米尺寸晶体(纳米晶体)时,量子限制效应在比化合物半导体材料体积激发子玻尔半径更短的范围中显现出来。由于量子限制效应,改变了与半导体材料各自带隙相应的特征能量。当能够发射可见光的半导体化合物被制成纳米晶体时,半导体纳米晶体化合物的频带隙能量开始增加,从而蓝移,可以观察到随纳米晶体尺寸降低至特定尺寸,发光区域向蓝色区域转移。因为控制半导体纳米晶体的特性、结构、形状和尺寸能够控制相应的带隙,可以得到范围很广的能级。
近年来,已有许多努力尝试通过湿法化学方法生长尺寸不同的纳米晶体,其中用在热配位有机溶剂中的表面活性剂沉积前体材料。根据湿法化学方法,随着纳米晶体生长,有机溶剂自然配位至纳米晶体表面作为分散剂。因此,有机溶剂允许初始晶核生长至纳米尺寸水平。此外,湿法化学方法的优点在于可以通过改变前体的浓度、有机溶剂的种类、合成温度和时间等来控制纳米晶体的尺寸。然而,要合成的纳米晶体的尺寸非常小,纳米晶体的表面积与体积之比增加,产生表面上的缺陷。因为这些缺陷相当于能带间隙间的能量陷阱(energy trap),它们降低了纳米晶体的发光效率。此外,纳米晶体越小,问题越严重。
迄今为止报导的改善纳米晶体发光效率的方法主要分为下列两种方法。
第一种方法是表面钝化方法,其中在纳米晶体的表面上涂布稳定的有机或无机材料以在其上形成保护膜。纳米晶体的发光效率取决于包围纳米晶体表面的有机分散剂的种类而不同。在这一点上,据报导当在CdSe纳米晶体表面上的烯丙胺或十二烷胺已被三辛基膦酸代替时,纳米晶体的发光效率显示出40-50%的改善(Nano letters,2001,1,207-211)。基于与有机保护膜相比无机保护膜显示出优异的稳定性和明显效果的事实,已经对无机保护膜进行了许多研究。纳米晶体通常具有一种结构,由作为主体纳米晶体的核部分和作为无机保护膜的壳部分组成。核-壳结构的纳米晶体显示出改善的发光效率,制备该纳米晶体的方法公开于美国专利号6,322,901和6,207,229中。报导了核-壳结构的纳米晶体显示出30-50%的改善的发光效率。然而,因为该制备方法包含令人讨厌的涂布步骤,并且因为涂布时纳米晶体的发光波长和粒径分布可能改变,该制备方法具有使发光波长分布变宽的缺点。此外,由于核和壳部分间晶格失配以及由壳变厚所引起的界面张力,纳米晶体的发光效率可能降低。此外,难以进行涂布步骤,重复生产性能较差。此外,构成核和壳部分的材料特性限制了材料的选择。
第二种方法是合成新的纳米晶体。本发明人已经开发了具有改善发光效率的纳米晶体,推测为合金形式,其可以用简单的方法合成,并提交了专利申请(韩国专利申请号2003-0049547)。通过下面方法制备纳米晶体:混合至少两种属于相同类的前体和一种属于不同类的前体,并将该混合物加入至有机溶剂中。前体之间的反应导致三组分纳米晶体的合成。与如上讨论的具有核-壳结构的纳米晶体相比,由此合成的纳米晶体显示出改善的发光效率,制备简单并且容易。类似地,曾有报道说可以均质合金形式制备三组分纳米晶体,或者根据前体的混合比例,三组分纳米晶体可以具有梯度的组合物。此外,曾有另一个报告,其中纳米晶体为合金形式并具有改善的发光效率,其是通过在高温下退火核-壳结构纳米晶体合成(J.Am.Chem.Soc.,2003,125,8589-8594)。
尽管上述讨论的纳米晶体显示出改善的发光效率,但很少有关于可发光的纳米晶体发光效率的报导,特别是,在蓝色区域(具有较高的能量)。该事实说明由小尺寸晶体表面上形成的能量陷阱引起的问题仍然没有解决。
发明内容
从以下给出的详细说明,本发明的其它适应范围将变得明显。然而,应当理解该详细说明和具体实例,虽然表明了本发明的优选实施方式,但仅仅是举例说明,因为对于本领域一般技术人员来说,根据该详细说明,在本发明本质和范围内的多种改变和变化将变得显而易见。
因此,考虑到上述问题产生了本发明,由此本发明的一个特征是提供一种改善发光纳米晶体在整个发光光谱范围,特别是蓝色区域的发光效率,在表面处理后不改变纳米晶体的发光性能的方法。
本发明的另一个特征是提供一种通过表面处理显示出改善的发光效率的化合物半导体纳米晶体。
本发明的又一个特征是提供一种包含该纳米晶体的有机场致发光器件。
根据本发明的一个特征,提供了一种改善由湿法化学方法合成的半导体纳米晶体发光效率的方法,该方法包括合成后用还原剂表面处理半导体纳米晶体的步骤。
根据本发明的另一个特征,提供了一种已经用还原剂表面处理的半导体纳米晶体。
根据本发明的又一个特征,提供了一种有机场致发光器件,其含有包括发光层的多个有机和无机层,其中发光层包含用还原剂表面处理的半导体纳米晶体。
本发明的目的通过以下实现:
1.一种改善半导体纳米晶体发光效率的方法,包括用还原剂表面处理半导体纳米晶体。
2.条目1的方法,其中通过湿法化学方法合成半导体纳米晶体。
3.条目1的方法,其中半导体纳米晶体为核-壳、合金或梯度结构,由至少一种材料制成,材料选自CdS、CdSe、CdTe、ZnS、ZnSe、ZnTe、HgS、HgSe、HgTe、GaN、GaP、GaAs、InP和InAs。
4.条目1的方法,其中还原剂为氢阴离子-产生盐、有机还原剂、还原性气体或包含该气体的溶液例如氢化硼钠、硼氢化锂、氢化锂铝、肼、氢气、硫化氢或氨气。
5.条目1的方法,其中纳米晶体的表面被还原或氧化成一种状态,其中用有机分散剂配位纳米晶体并在与该分散剂具有亲和力的溶剂中分散纳米晶体。
6.条目4的方法,其中分散剂至少为一种选自C2-18烷基羧酸、C2-18链烯基羧酸、C2-18烷基磺酸、C2-18链烯基磺酸、C2-18膦酸、C2-18烷基胺、C2-18链烯基胺的化合物和其盐。
7.条目5的方法,其中分散剂为至少一种选自油酸、硬脂酸、棕榈酸、己基膦酸、正辛基膦酸、十四烷基膦酸、十八烷基膦酸、正辛胺和十六烷基胺的化合物。
8.条目1的方法,其中纳米晶体和还原剂以1∶10-10∶1的重量比混合。
9.条目1的方法,其中纳米晶体的表面处理在0-100℃进行。
10.条目1的方法,其中纳米晶体的表面处理进行1秒至2天。
11.条目1的方法,其中纳米晶体具有球形、棒形、三角形、四角锥形、立方形、盒形或星形中的一种形状或混合形状。
12.条目1的方法,其中纳米晶体尺寸为1-50nm。
13.一种通过条目1的方法制备的半导体纳米晶体。
14.一种有机电致发光器件,包括含有发光层的多个有机和无机层,其中发光层包括条目13的半导体纳米晶体。
15.一种半导体纳米晶体,其具有化学还原或氧化的表面。
附图说明
根据下文给出的详细说明和附图将更加充分地理解本发明,附图仅是举例说明,不是限制本发明,其中:
图1是本申请实施例1中制备的CdS纳米晶体在表面处理前和表面处理后的光致发光光谱;
图2是本申请实施例1中制备的CdS纳米晶体在表面处理前和表面处理后的紫外线吸收光谱;
图3是本申请实施例1中制备的CdS纳米晶体的高分辨透射电子显微镜(HRTEM)图像;
图4是本申请实施例1中制备的CdS纳米晶体的透射电子显微镜图像;和
图5是本申请实施例5中制造的有机场致发光器件的光致发光光谱。
具体实施方式
以下,将更加详细地解释本发明。
本发明中,半导体纳米晶体的制备是通过本领域普通已知的湿法化学方法进行的,在下文详细描写。然而,本发明不局限于如下所述方法。
为了通过湿法化学方法制备半导体纳米晶体,纳米晶体分散在其中的分散溶剂的选择是重要的。本发明中使用的溶剂应该能配位至化合物半导体纳米晶体的表面,体积足够大至可以控制半导体纳米晶体的生长速度。此外,溶剂在晶体生长温度下应该是稳定的,能够分散纳米晶体使之处于溶剂配位至纳米晶体表面的状态。溶剂的实例包括,但是不局限于烷基膦、烷基氧膦、烷基胺等。优选,单独或结合使用膦(phosphine)、氧化膦、或具有高沸点的大体积烷基胺,其中烷基具有约8-16个碳原子,并且氮原子配位至纳米晶体表面。
这些溶剂在空气中是相对稳定的,但是在高温下可被氧化。因此,合成过程中溶剂保持在惰性气氛下,例如氮气或氩气。如有必要,溶剂可以保持在压力下。
如有必要,进一步加入分散剂并配位至纳米晶体以实现纳米晶体在溶剂中的良好分散。
分散剂的具体实例包括,但是不局限于C2-18烷基羧酸、C2-18链烯基羧酸、C2-18烷基磺酸、C2-18链烯基磺酸、C2-18膦酸、C2-18烷基胺、C2-18链烯基胺等。可以使用更加优选的油酸、硬脂酸、棕榈酸、己基膦酸、正辛基膦酸、十四烷基膦酸、十八烷基膦酸、正辛胺、十六烷基胺等。
反应于溶剂中在适当反应条件下,例如大气压力和温度下进行。此时,优选反应系统中的温度分布较窄。反应温度取决于纳米晶体的生长速度,可以随要合成的材料的种类而变化。反应温度通常为25-500℃,优选为25-350℃。当反应温度保持为恒定值时,将半导体前体材料加料到反应体系中。此时,重要的是控制进料速率使得全部前体材料可以同时加料到反应体系中。至于半导体前体,分别加入金属前体和硫属化物前体并使它们反应的方法是本领域普遍已知的[J.Am.Chem.Soc.,115,8706-8715(1993)]。此外,存在加入单组分前体并使其热分解的已知方法[J.Mater.Chem.,9,2433-2437(1999)]。在这种情况下,使用可以容易地分散该前体的溶剂。溶剂应该具有足够低的粘度以控制前体溶液的进料速率,并且在反应系统中是稳定的。至于溶剂,优选吡啶、烷基胺、烷基膦等。加入前体后,需要快速分散反应溶液中前体的搅拌器以及排出反应时产生气体的排气口作为反应器的组成部分。在混合物保持预定时间使得量子点(quantum dots)生长为晶体形式后,结束反应。另一方面,在量子点为核-壳结构情况下,进一步加入无机前体来涂布核表面。当注入用于涂布核的前体时,前体慢慢地在预先确定的浓度范围内扩散,使其可以沉积在核表面上,不形成另外的核。
然后突然降低反应温度结束纳米晶体的晶体生长。为此目的,进一步加入具有相对低沸点的有机溶剂。反应溶液的热量通过溶剂的蒸发被吸收。可以结束晶体生长。因此,控制溶剂的加入量使得反应温度降低至预先确定的温度,由此结束晶体生长。由此制备的纳米晶体以胶体状态分散在溶剂中。它们可以通过离心作用与溶剂分离。
取决于反应条件,半导体纳米晶体可以具有多种形状,例如球形、棒形、三角形(tripods)、四角锥形(tetrapods)、立方形、盒形、星形等,可以用高分辨透射电子显微镜(HRTEM)测定纳米晶体的形状和晶体表面。
本发明中,用还原剂处理通过湿法化学方法制备的化合物半导体纳米晶体。该还原改善了半导体纳米晶体的发光效率。
本发明方法可以应用于全部半导体纳米晶体,与其种类无关。具体地,可以使用由CdS、CdSe、CdTe、ZnS、ZnSe、ZnTe、HgS、HgSe、HgTe、GaN、GaP、GaAs、InP、InAs或其混合物制成的半导体纳米晶体。另一方面,本发明方法可以不受限制地应用于核-壳、梯度(gradient)和合金型的纳米晶体。半导体纳米晶体的发光光谱范围通常为300-1300nm。
至于本发明中使用的还原剂,可以使用所有类型能够产生氢阴离子的盐例如氢化硼钠、硼氢化锂、氢化锂铝、有机还原剂例如肼、所有能够形成还原气氛的气体例如氢气、硫化氢、氨气等,以及溶解该气体的溶液等。
纳米晶体与加入进行还原的还原剂的重量比优选为1∶10-10∶1。当重量比超出该范围时,通过还原剂的氧化-还原反应不足以处理纳米晶体表面,或纳米晶体表面被还原剂污染。
可用于还原的溶剂实例包括,但是不局限于芳香族溶剂例如甲苯、氯苯等,正烷烃溶剂例如己烷、辛烷等,非极性溶剂例如二氯甲烷、氯仿等,醇例如乙醇、丙醇、丁醇等,极性溶剂例如二甲基甲酰胺、四氢呋喃等。
还原在0-100℃的温度下进行,优选10-50℃。当还原温度超过100℃时,出现纳米晶体结块。当还原温度低于0℃时,反应速率太低。显现处理效果所需的处理时间随纳米晶体的种类而变化,例如1秒至2天。如果处理时间不在该范围内,反应可能不充分或可能出现沉淀。
根据本发明方法,半导体纳米晶体的发光效率优选改善大于30%,更加优选改善60%。
用本发明方法表面处理的纳米晶体可以用于多种应用例如显示器、传感器、能源领域,特别可以用于形成场致发光器件的发光层。可以采用湿法例如印刷、涂布、喷墨等来形成使用半导体纳米晶体的发光层。由此形成的发光层优选厚度为50-100nm。
场致发光器件可以具有通用结构例如阳极/发光层/阴极、阳极/缓冲层/发光层/阴极、阳极/空穴传输层/发光层/阴极、阳极/缓冲层/空穴传输层/发光层/阴极、阳极/缓冲层/空穴传输层/发光层/电子传输层/阴极、阳极/缓冲层/空穴传输层/发光层/空穴阻挡层/阴极结构等,但是不具体限于这些结构。
至于构成缓冲层的材料,可以使用本领域为此目的通常使用的化合物。优选实例包括,但是不具体限于铜酞菁、聚噻吩、聚苯胺、聚乙炔、聚吡咯、聚亚苯基亚乙烯基和其衍生物。
至于构成整个传输层的材料可以使用本领域中为此目通常使用的化合物,优选使用聚三苯基胺,但是本发明不具体限于该化合物。
至于构成空穴阻挡层的材料,可以使用本领域为此目的通常使用的化合物。优选实例包括,但是不具体限于LiF、BaF2、MgF2等。
本发明包含多个有机和无机层的有机场致发光器件不需要特殊的制造装置和方法。可以根据使用普通发光材料的传统方法制造有机场致发光器件。
在下文中,将参考下列实施例更详细地描述本发明。然而,这些实施例是为了举例说明,不应认为是对本发明范围的限制。
实施例1:合成CdS纳米晶体并表面处理
将16g三辛胺(在下文中,称为′TOA′)、1.9g油酸和1.6mmol氧化镉同时装入具有回流冷凝器的125ml烧瓶中。混合物搅拌加热至300℃。另外,将硫(S)粉末溶解在三辛基膦phpsphine(在下文中,称为′TOP′)中形成S-TOP络合物溶液,硫浓度大约0.1M。将1.0ml S-TOP溶液快速送入到上述混合物中,然后搅拌反应2分钟。反应完成后立即冷却反应混合物至室温。将乙醇作为非溶剂加入反应混合物中,然后离心得到的混合物。通过倾注溶液分离沉淀物,并分散在8ml甲苯中以得到在甲苯中的CdS纳米晶体溶液。抽样1ml CdS溶液,并向其中加入大约0.02g NaBH4。在室温下搅拌得到的混合物大约30分钟以还原CdS纳米晶体。
CdS纳米晶体表面处理前和表面处理后的光致发光光谱和UV吸收光谱分别显示在图1和2中。如图1所示,在490nm观察到发光峰值、FWHM(半最大值处的全宽)大约为25nm。此外,可以观察到表面处理没有引起纳米晶体中发光波长和其分布的任何改变,但是增加了峰值的强度。处理后发光效率从10%增加到85%。如图2所示,表面处理几乎没有或没有影响到UV吸收,两种光谱显示出彼此类似的轮廓。图3为用还原剂表面处理后的CdS纳米晶体的高分辨透射电子显微镜(HR-TEM,刻度条(bar)=5mm)图像。HR-TEM证实CdS纳米晶体具有均匀的晶体结构。图4为用还原剂表面处理后的干燥CdS纳米晶体粉末的透射电子显微镜(TEM,刻度条=20mm)图像。TEM图像证实纳米晶体具有均匀的粒径分布,因此以六方堆积结构排列。
实施例2:合成CdTe纳米晶体并表面处理
将16g TOA、0.5g油酸和0.2mmol乙酸镉同时装入具有回流冷凝器的125ml烧瓶中。混合物搅拌加热至180℃。另外,在TOP中溶解Te粉末形成Te-TOP络合物溶液,Te浓度大约0.2M。将0.5ml Te-TOP溶液快速地送入上述混合物中,然后搅拌反应30秒。反应完成后立即冷却反应混合物至室温。将乙醇作为非溶剂加入反应混合物,然后离心得到的混合物。通过倾注溶液分离沉淀物,并将其分散在5ml甲苯中以得到在甲苯中的CdTe纳米晶体溶液。抽样1ml CdTe溶液,并向其中加入大约0.02g NaBH4。在室温下搅拌得到的混合物大约10分钟以还原CdTe纳米晶体。记录CdTe纳米晶体表面处理前和表面处理后的光致发光光谱。光致发光光谱证实在622nm观察到发光峰值,FWHM为60nm。此外,可以观察到表面处理后发光效率增加大约5倍。
实施例3:合成CdSeS纳米晶体并表面处理
将16g TOA、0.5g油酸和0.4mmol氧化镉同时装入具有回流冷凝器的125ml烧瓶中。混合物搅拌加热至300℃。另外,将Se粉末溶解在TOP中形成Se-TOP络合物溶液,Se浓度大约为0.25M,然后在TOP中溶解S粉末形成S-TOP络合物溶液,S浓度大约为1.0M。将0.9ml S-TOP溶液和0.1ml Se-TOP溶液快速注入到上述混合物中,然后搅拌反应4分钟。反应完成后立即冷却反应混合物至室温。将乙醇作为非溶剂加入反应混合物,然后离心得到的混合物。通过倾注溶液分离沉淀物,并分散在10ml甲苯中以得到在甲苯中的CdSeS纳米晶体溶液。抽样1ml CdSeS溶液,并向其中加入大约0.02g NaBH4。在室温下搅拌得到的混合物大约30分钟以还原CdSeS纳米晶体。记录CdSeS纳米晶体表面处理前和表面处理后的光致发光光谱。光致发光光谱证实在552nm观察到发光峰值,FWHM大约为40nm。此外,可以观察到表面处理后发光效率增加大约5倍。
实施例4:合成CdSe纳米晶体并表面处理
将16g TOA、0.5g油酸和0.4mmol氧化镉同时装入装有回流冷凝器的125ml烧瓶中。混合物搅拌加热至300℃。另外,在TOP中溶解Se粉末形成Se-TOP络合物溶液,Se浓度大约1M。将1ml Se-TOP溶液快速地注入上述混合物中,然后搅拌反应1分钟。反应完成后立即冷却反应混合物至室温。将乙醇作为非溶剂加入反应混合物中,然后离心得到的混合物。通过倾注溶液分离沉淀物,并分散在10ml甲苯中以得到在甲苯中的CdSe纳米晶体溶液。抽样1ml CdSe溶液,并向其中加入大约0.02g NaBH4。在室温下搅拌得到的混合物大约30分钟。记录CdSe纳米晶体表面处理前和表面处理后的光致发光光谱。光致发光光谱证实在520nm观察到发光峰值,FWHM大约为35nm。此外,可以观察到表面处理后发光效率增加大约7倍。
实施例5:使用表面处理的CdSe纳米晶体制造场致发光器件
用PEDOT(聚3,4-亚乙二氧基噻吩ethylenedioxythiophene)作为整个传输层旋转涂布在制图的ITO基底上至厚度为50nm,然后在110℃烘干10分钟。在得到的结构上,旋转涂布在氯苯中1重量%的表面处理的CdSe纳米晶体溶液,干燥形成厚度10nm的发光层。在发光层上沉积Alq3(三(8-羟基喹啉)铝)形成厚度大约40nm的电子传递层。在电子传递层上依次分别沉积LiF和铝至厚度1nm和200nm,以制造场致发光器件。由此制造的有机场致发光器件的发光光谱示于图5。可以看出发光峰值在520nm附近,FWHM大约为40nm。此外,器件的亮度为10Cd/m2,器件的效率大约为0.1%。
尽管为了举例说明已经公开了本发明的优选实施方式,本领域一般技术人员可以在不脱离所附权利要求书公开的本发明范围和本质内作出多种改变,添加和替换。
由此描述的本发明,很明显在许多方面可以改变。这种变化不被认为是脱离本发明的本质和范围,所有这类的改变对于本领域一般技术人员来说是显而易见的,确定为包括在权利要求范围内。
Claims (4)
1.一种改善半导体纳米晶体发光效率的方法,包括:
在有机分散剂和溶剂的存在下制造半导体纳米晶体;
随后将所得到的半导体纳米晶体加入用于还原的溶剂中并向其添加还原剂以进行所述半导体纳米晶体的表面处理;
其中所述有机分散剂配位到所述半导体纳米晶体且为选自C2-18烷基羧酸、C2-18链烯基羧酸、C2-18烷基磺酸、C2-18链烯基磺酸、C2-18膦酸、C2-18烷基胺、C2-18链烯基胺的化合物和其盐的至少一种化合物,和所述还原剂选自氢化硼钠、硼氢化锂、氢化锂铝、肼、氢气、硫化氢和氨气,和
其中所述半导体纳米晶体和所述还原剂以1∶10-10∶1的重量比混合,
所述半导体纳米晶体的所述表面处理在0-100℃的温度下进行,和
所述半导体纳米晶体的所述表面处理进行1秒至2天。
2.权利要求1的方法,其中所述有机分散剂为选自油酸、硬脂酸、棕榈酸、己基膦酸、正辛基膦酸、十四烷基膦酸、十八烷基膦酸、正辛胺和十六烷基胺的至少一种化合物。
3.权利要求1的方法,其中所述用于还原的溶剂选自甲苯、氯苯、辛烷、二氯甲烷、氯仿、乙醇、丙醇、丁醇、和二甲基甲酰胺。
4.权利要求1的方法,其中所述半导体纳米晶体具有选自球形、棒形、三角形、四角锥形、立方形、盒形和星形的形状。
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Publication number | Publication date |
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JP2005101601A (ja) | 2005-04-14 |
JP4928071B2 (ja) | 2012-05-09 |
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EP2284296A1 (en) | 2011-02-16 |
CN1595673A (zh) | 2005-03-16 |
KR20050026227A (ko) | 2005-03-15 |
CN101974335A (zh) | 2011-02-16 |
EP1516944A1 (en) | 2005-03-23 |
EP1516944B1 (en) | 2011-12-21 |
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