JP4928071B2 - 半導体ナノ結晶の量子効率向上方法、半導体ナノ結晶および有機電気発光素子 - Google Patents
半導体ナノ結晶の量子効率向上方法、半導体ナノ結晶および有機電気発光素子 Download PDFInfo
- Publication number
- JP4928071B2 JP4928071B2 JP2004262380A JP2004262380A JP4928071B2 JP 4928071 B2 JP4928071 B2 JP 4928071B2 JP 2004262380 A JP2004262380 A JP 2004262380A JP 2004262380 A JP2004262380 A JP 2004262380A JP 4928071 B2 JP4928071 B2 JP 4928071B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor nanocrystal
- quantum efficiency
- semiconductor
- acid
- carbon atoms
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004054 semiconductor nanocrystal Substances 0.000 title claims description 48
- 238000000034 method Methods 0.000 title claims description 41
- 239000010410 layer Substances 0.000 claims description 31
- 238000004381 surface treatment Methods 0.000 claims description 21
- 239000002904 solvent Substances 0.000 claims description 19
- 239000000126 substance Substances 0.000 claims description 19
- 125000004432 carbon atom Chemical group C* 0.000 claims description 15
- 239000003638 chemical reducing agent Substances 0.000 claims description 15
- -1 hydride ions Chemical class 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 15
- 239000013078 crystal Substances 0.000 claims description 12
- 239000002270 dispersing agent Substances 0.000 claims description 9
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 7
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 claims description 6
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 claims description 6
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 claims description 6
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000005642 Oleic acid Substances 0.000 claims description 6
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 claims description 6
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 4
- 150000003973 alkyl amines Chemical class 0.000 claims description 4
- IPCSVZSSVZVIGE-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 claims description 4
- 229910004613 CdTe Inorganic materials 0.000 claims description 3
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 238000006479 redox reaction Methods 0.000 claims description 3
- FJLUATLTXUNBOT-UHFFFAOYSA-N 1-Hexadecylamine Chemical compound CCCCCCCCCCCCCCCCN FJLUATLTXUNBOT-UHFFFAOYSA-N 0.000 claims description 2
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 claims description 2
- 229910002601 GaN Inorganic materials 0.000 claims description 2
- 229910005540 GaP Inorganic materials 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 229910004262 HgTe Inorganic materials 0.000 claims description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 2
- 239000012448 Lithium borohydride Substances 0.000 claims description 2
- 235000021314 Palmitic acid Nutrition 0.000 claims description 2
- 235000021355 Stearic acid Nutrition 0.000 claims description 2
- 229910007709 ZnTe Inorganic materials 0.000 claims description 2
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 2
- 229910000037 hydrogen sulfide Inorganic materials 0.000 claims description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 2
- 239000012280 lithium aluminium hydride Substances 0.000 claims description 2
- WQEPLUUGTLDZJY-UHFFFAOYSA-N n-Pentadecanoic acid Natural products CCCCCCCCCCCCCCC(O)=O WQEPLUUGTLDZJY-UHFFFAOYSA-N 0.000 claims description 2
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 claims description 2
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 claims description 2
- FTMKAMVLFVRZQX-UHFFFAOYSA-N octadecylphosphonic acid Chemical compound CCCCCCCCCCCCCCCCCCP(O)(O)=O FTMKAMVLFVRZQX-UHFFFAOYSA-N 0.000 claims description 2
- IOQPZZOEVPZRBK-UHFFFAOYSA-N octan-1-amine Chemical compound CCCCCCCCN IOQPZZOEVPZRBK-UHFFFAOYSA-N 0.000 claims description 2
- NJGCRMAPOWGWMW-UHFFFAOYSA-N octylphosphonic acid Chemical compound CCCCCCCCP(O)(O)=O NJGCRMAPOWGWMW-UHFFFAOYSA-N 0.000 claims description 2
- 235000021313 oleic acid Nutrition 0.000 claims description 2
- 239000012044 organic layer Substances 0.000 claims description 2
- 150000003839 salts Chemical class 0.000 claims description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 2
- 239000012279 sodium borohydride Substances 0.000 claims description 2
- 229910000033 sodium borohydride Inorganic materials 0.000 claims description 2
- 239000008117 stearic acid Substances 0.000 claims description 2
- BVQJQTMSTANITJ-UHFFFAOYSA-N tetradecylphosphonic acid Chemical compound CCCCCCCCCCCCCCP(O)(O)=O BVQJQTMSTANITJ-UHFFFAOYSA-N 0.000 claims description 2
- GJWAEWLHSDGBGG-UHFFFAOYSA-N hexylphosphonic acid Chemical compound CCCCCCP(O)(O)=O GJWAEWLHSDGBGG-UHFFFAOYSA-N 0.000 claims 1
- 239000002086 nanomaterial Substances 0.000 claims 1
- 239000002096 quantum dot Substances 0.000 description 32
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 27
- 238000006243 chemical reaction Methods 0.000 description 26
- 239000002159 nanocrystal Substances 0.000 description 25
- 239000000243 solution Substances 0.000 description 21
- 239000002243 precursor Substances 0.000 description 18
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 10
- 239000000203 mixture Substances 0.000 description 9
- 238000003756 stirring Methods 0.000 description 9
- 238000003786 synthesis reaction Methods 0.000 description 9
- 239000002244 precipitate Substances 0.000 description 8
- 238000001308 synthesis method Methods 0.000 description 7
- 239000006185 dispersion Substances 0.000 description 6
- 230000005525 hole transport Effects 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- 239000000872 buffer Substances 0.000 description 5
- 238000005119 centrifugation Methods 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 239000011258 core-shell material Substances 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- XTAZYLNFDRKIHJ-UHFFFAOYSA-N n,n-dioctyloctan-1-amine Chemical compound CCCCCCCCN(CCCCCCCC)CCCCCCCC XTAZYLNFDRKIHJ-UHFFFAOYSA-N 0.000 description 5
- 239000003960 organic solvent Substances 0.000 description 5
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000001443 photoexcitation Effects 0.000 description 4
- 238000000103 photoluminescence spectrum Methods 0.000 description 4
- 239000011541 reaction mixture Substances 0.000 description 4
- 238000010992 reflux Methods 0.000 description 4
- MJNSMKHQBIVKHV-UHFFFAOYSA-N selenium;trioctylphosphane Chemical compound [Se].CCCCCCCCP(CCCCCCCC)CCCCCCCC MJNSMKHQBIVKHV-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Natural products P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 3
- 238000000862 absorption spectrum Methods 0.000 description 3
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 3
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 230000002194 synthesizing effect Effects 0.000 description 3
- VVJKKWFAADXIJK-UHFFFAOYSA-N Allylamine Chemical group NCC=C VVJKKWFAADXIJK-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 238000000024 high-resolution transmission electron micrograph Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- NLECPILJYUVNEH-UHFFFAOYSA-N 1-[octoxy(octyl)phosphoryl]oxyoctane Chemical group CCCCCCCCOP(=O)(CCCCCCCC)OCCCCCCCC NLECPILJYUVNEH-UHFFFAOYSA-N 0.000 description 1
- GKWLILHTTGWKLQ-UHFFFAOYSA-N 2,3-dihydrothieno[3,4-b][1,4]dioxine Chemical compound O1CCOC2=CSC=C21 GKWLILHTTGWKLQ-UHFFFAOYSA-N 0.000 description 1
- 229910016036 BaF 2 Inorganic materials 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 238000003917 TEM image Methods 0.000 description 1
- 241001455273 Tetrapoda Species 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 239000003849 aromatic solvent Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- LHQLJMJLROMYRN-UHFFFAOYSA-L cadmium acetate Chemical compound [Cd+2].CC([O-])=O.CC([O-])=O LHQLJMJLROMYRN-UHFFFAOYSA-L 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- JRBPAEWTRLWTQC-UHFFFAOYSA-N dodecylamine Chemical group CCCCCCCCCCCCN JRBPAEWTRLWTQC-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000001194 electroluminescence spectrum Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000012454 non-polar solvent Substances 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- AUONHKJOIZSQGR-UHFFFAOYSA-N oxophosphane Chemical compound P=O AUONHKJOIZSQGR-UHFFFAOYSA-N 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 1
- 229920000327 poly(triphenylamine) polymer Polymers 0.000 description 1
- 229920001197 polyacetylene Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B19/00—Selenium; Tellurium; Compounds thereof
- C01B19/007—Tellurides or selenides of metals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09C—TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
- C09C1/00—Treatment of specific inorganic materials other than fibrous fillers; Preparation of carbon black
- C09C1/10—Compounds of cadmium
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09C—TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
- C09C1/00—Treatment of specific inorganic materials other than fibrous fillers; Preparation of carbon black
- C09C1/10—Compounds of cadmium
- C09C1/12—Cadmium sulfoselenide
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09C—TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
- C09C1/00—Treatment of specific inorganic materials other than fibrous fillers; Preparation of carbon black
- C09C1/38—Compounds of mercury
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/56—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing sulfur
- C09K11/562—Chalcogenides
- C09K11/565—Chalcogenides with zinc cadmium
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
- C09K11/881—Chalcogenides
- C09K11/883—Chalcogenides with zinc or cadmium
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
- C01P2002/84—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by UV- or VIS- data
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/962—Quantum dots and lines
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Inorganic Chemistry (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Composite Materials (AREA)
- Optics & Photonics (AREA)
- Biophysics (AREA)
- Computer Hardware Design (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Luminescent Compositions (AREA)
- Electroluminescent Light Sources (AREA)
Description
この際、分散溶媒は、半導体ナノ結晶の表面に配位することが可能でなければならず、ある程度のバルキネス(bulkiness)を持つことにより、結晶の成長速度が調節可能でなければならず、また、結晶成長温度で安定し、ナノ結晶と配位された状態でナノ結晶を分散させることが可能でなければならないという特性を有する。
[実施例1]:CdSナノ結晶の合成及び表面処理
トリオクチルアミン(以下「TOA」という)16g、オレイン酸1.9g、及びカドミウムオキサイド1.6mmolを、同時に125mlの還流凝縮器付フラスコに入れ、攪拌しながら温度を300°Cに昇温した。
TOA16g、オレイン酸0.5g、及びカドミウムアセテート0.2mmolを、同時に125mlの還流凝縮器付フラスコに入れ、攪拌しながら温度を180℃に昇温した。これとは別に、Te粉末をTOPに溶かしてTe濃度0.2M程度のTe−TOP錯体溶液を作った。
TOA16g、オレイン酸0.5g、及びカドミウムオキサイド0.4mmolを、同時に125mlの還流凝縮器付フラスコに入れ、攪拌しながら温度を300℃に昇温した。これとは別に、Se粉末をTOPに溶かしてSe濃度0.25M程度のSe−TOP錯体溶液を作り、S粉末をTOPに溶かしてS濃度1.0M程度のS−TOP錯体溶液を作った。
TOA16g、オレイン酸0.5g、及びカドミウムオキサイド0.4mmolを、同時に125mlの還流凝縮器付フラスコに入れ、攪拌しながら温度を300℃に昇温した。これとは別に、Se粉末をTOPに溶かしてSe濃度1M程度のSe−TOP錯体溶液を作った。
パターニングされているITO基板の上部に正孔伝達層としてPEDOT(Poly-3,4-Ethylenedioxythiophene)を、50nmの厚さにスピンコーティングして110℃で10分間熱処理し、その後、表面処理したCdSe濃度1重量%で製造されたクロロベンゼン溶液をスピンコーティングした後、これを乾燥させて厚さ10nmの発光層を形成した。
Claims (12)
- 半導体ナノ結晶の表面が、分散剤によって配位され、当該分散剤と親和力のある溶媒に前記半導体ナノ結晶が分散された状態で、前記半導体ナノ結晶を還元剤で表面処理して、前記分散剤と前記半導体ナノ結晶の表面において酸化還元反応を起こすことにより前記半導体ナノ結晶の量子効率を向上させる方法であって、
前記還元剤としては、ヒドリドイオン(H-)を形成することが可能な塩、有機還元剤、または還元性ガスを溶かした溶液を使用することを特徴とする半導体ナノ結晶の量子効率向上方法。 - 前記半導体ナノ結晶がCdS、CdSe、CdTe、ZnS、ZnSe、ZnTe、HgS、HgSe、HgTe、GaN、GaP、GaAs、InP及びInAsよりなる群から選択された少なくとも1種以上の物質で構成されたコア・シェル、合金型または変化(gradient)構造であることを特徴とする請求項1に記載の半導体ナノ結晶の量子効率向上方法。
- 前記分散剤が、炭素数2〜18のアルキルカルボン酸、炭素数2〜18のアルケニルカルボン酸、炭素数2〜18のアルキルスルホン酸、炭素数2〜18のアルケニルスルホン酸、炭素数2〜18のホスホン酸、炭素数2〜18のアルキルアミン、及び炭素数2〜18のアルケニルアミンよりなる群から選択された少なくとも1種以上の物質であることを特徴とする請求項1に記載の半導体ナノ結晶の量子効率向上方法。
- 前記分散剤が、オレイン酸、ステアリン酸、パルミチン酸、ヘキシルホスホン酸、n−オクチルホスホン酸、テトラデシルホスホン酸、オクタデシルホスホン酸、n−オクチルアミン及びヘキサデシルアミンよりなる群から選択された少なくとも1種以上の物質であることを特徴とする請求項1に記載の半導体ナノ結晶の量子効率向上方法。
- 前記半導体ナノ結晶と、前記還元剤の重量比が、1:10乃至10:1であることを特徴とする請求項1に記載の半導体ナノ結晶の量子効率向上方法。
- 前記半導体ナノ結晶の表面処理が、0〜100℃の温度範囲で行われることを特徴とする請求項1に記載の半導体ナノ結晶の量子効率向上方法。
- 前記半導体ナノ結晶の表面処理が1秒〜2日間行われることを特徴とする請求項1に記載の半導体ナノ結晶の量子効率向上方法。
- 前記半導体ナノ結晶が球形、棒形、トライポッド形、テトラポッド形、立方体形、ボックス形、星形であることを特徴とする請求項1に記載の半導体ナノ結晶の量子効率向上方法。
- 前記半導体ナノ結晶の大きさが1乃至50nmであることを特徴とする請求項1に記載の半導体ナノ結晶の量子効率向上方法。
- 前記還元性ガスが、水素化ホウ素ナトリウム、水素化ホウ素リチウム、水素化アルミニウムリチウム、ヒドラジン、水素、硫化水素、アンモニア、またはこれらの組み合わせであることを特徴とする請求項1に記載の半導体ナノ結晶の量子効率向上方法。
- 請求項1に記載の方法によって形成された半導体ナノ結晶。
- 多数の有機層及び無機層からなる電気発光素子において、発光層が、請求項11に記載の半導体ナノ結晶を含むことを特徴とする有機電気発光素子。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR2003-063229 | 2003-09-09 | ||
KR1020030063229A KR100796122B1 (ko) | 2003-09-09 | 2003-09-09 | 화합물 반도체 나노결정의 표면 처리를 통한 양자효율 향상 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005101601A JP2005101601A (ja) | 2005-04-14 |
JP4928071B2 true JP4928071B2 (ja) | 2012-05-09 |
Family
ID=34192224
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004262380A Active JP4928071B2 (ja) | 2003-09-09 | 2004-09-09 | 半導体ナノ結晶の量子効率向上方法、半導体ナノ結晶および有機電気発光素子 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7288468B2 (ja) |
EP (2) | EP2284296B1 (ja) |
JP (1) | JP4928071B2 (ja) |
KR (1) | KR100796122B1 (ja) |
CN (2) | CN1595673A (ja) |
Families Citing this family (60)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100657891B1 (ko) * | 2003-07-19 | 2006-12-14 | 삼성전자주식회사 | 반도체 나노결정 및 그 제조방법 |
US7553775B2 (en) * | 2004-08-30 | 2009-06-30 | Kabushiki Kaisha Toshiba | Method for coating semiconductor surface, process for production of semiconductor particles using said method, and optical element using said semiconductor particles |
EP1666562B1 (en) * | 2004-11-11 | 2018-03-07 | Samsung Electronics Co., Ltd. | Interfused nanocrystals and method of preparing the same |
US9637682B2 (en) | 2004-11-11 | 2017-05-02 | Samsung Electronics Co., Ltd. | Interfused nanocrystals and method of preparing the same |
KR100719574B1 (ko) * | 2005-11-04 | 2007-05-17 | 삼성에스디아이 주식회사 | 평판 디스플레이 장치 및 전자 방출 소자 |
TWI307646B (en) * | 2005-12-06 | 2009-03-21 | Lg Chemical Ltd | Core-shell type nanoparticles and method for preparing the same |
US7517718B2 (en) * | 2006-01-12 | 2009-04-14 | International Business Machines Corporation | Method for fabricating an inorganic nanocomposite |
US20090236563A1 (en) * | 2006-01-27 | 2009-09-24 | Konica Minolta Medical & Graphic, Inc. | Nanosized Semiconductor Particle Having Core/Shell Structure and Manufacturing Method Thereof |
KR100754396B1 (ko) * | 2006-02-16 | 2007-08-31 | 삼성전자주식회사 | 양자점 발광소자 및 그 제조방법 |
KR100678764B1 (ko) * | 2006-02-28 | 2007-02-06 | 한국화학연구원 | 콜로이드상 양자점의 제조방법 |
WO2007143197A2 (en) | 2006-06-02 | 2007-12-13 | Qd Vision, Inc. | Light-emitting devices and displays with improved performance |
KR101057270B1 (ko) * | 2006-03-28 | 2011-08-16 | 샤프 가부시키가이샤 | 13족 질화물 반도체 입자 형광체 및 그의 제조 방법 |
US11031567B2 (en) * | 2006-07-11 | 2021-06-08 | The Regents Of The University Of Michigan | Efficient solar cells using all-organic nanocrystalline networks |
JP2010508620A (ja) * | 2006-09-12 | 2010-03-18 | キユーデイー・ビジヨン・インコーポレーテツド | 所定のパターンを表示するために有用なエレクトロルミネセントディスプレイ |
JP5131195B2 (ja) * | 2006-09-15 | 2013-01-30 | コニカミノルタエムジー株式会社 | 半導体ナノ粒子とその製造方法 |
KR100759716B1 (ko) * | 2006-09-26 | 2007-10-04 | 고려대학교 산학협력단 | 복합기능 자성체 코어 - 반도체 쉘 나노 입자 및 그의제조방법 |
KR100759715B1 (ko) * | 2006-09-26 | 2007-10-04 | 고려대학교 산학협력단 | 균일한 크기의 복합기능 나노 입자 제조방법 |
JP4318710B2 (ja) * | 2006-10-12 | 2009-08-26 | シャープ株式会社 | ナノ結晶粒子蛍光体と被覆ナノ結晶粒子蛍光体、ならびに被覆ナノ結晶粒子蛍光体の製造方法 |
WO2008133660A2 (en) | 2006-11-21 | 2008-11-06 | Qd Vision, Inc. | Nanocrystals including a group iiia element and a group va element, method, composition, device and other prodcucts |
WO2008063657A2 (en) * | 2006-11-21 | 2008-05-29 | Qd Vision, Inc. | Light emitting devices and displays with improved performance |
KR100853086B1 (ko) * | 2007-04-25 | 2008-08-19 | 삼성전자주식회사 | 나노결정-금속산화물 복합체 및 그의 제조방법 |
WO2008139811A1 (ja) * | 2007-04-26 | 2008-11-20 | Konica Minolta Medical & Graphic, Inc. | 無機ナノ粒子蛍光体の製造方法及び蛍光体標識化合物 |
KR101995371B1 (ko) | 2008-04-03 | 2019-07-02 | 삼성 리서치 아메리카 인코포레이티드 | 양자점들을 포함하는 발광 소자 |
US9525148B2 (en) | 2008-04-03 | 2016-12-20 | Qd Vision, Inc. | Device including quantum dots |
KR101462652B1 (ko) * | 2008-04-23 | 2014-11-17 | 삼성전자 주식회사 | 양자점-무기 매트릭스 복합체의 제조방법 |
US11198270B2 (en) | 2008-12-30 | 2021-12-14 | Nanosys, Inc. | Quantum dot films, lighting devices, and lighting methods |
GB2467161A (en) | 2009-01-26 | 2010-07-28 | Sharp Kk | Nitride nanoparticles |
GB2467162A (en) * | 2009-01-26 | 2010-07-28 | Sharp Kk | Fabrication of nitride nanoparticles |
KR101924080B1 (ko) | 2009-11-11 | 2018-11-30 | 삼성 리서치 아메리카 인코포레이티드 | 양자점을 포함하는 디바이스 |
WO2011100023A1 (en) | 2010-02-10 | 2011-08-18 | Qd Vision, Inc. | Semiconductor nanocrystals and methods of preparation |
WO2012064562A1 (en) | 2010-11-10 | 2012-05-18 | Nanosys, Inc. | Quantum dot films, lighting devices, and lighting methods |
WO2012099653A2 (en) | 2010-12-08 | 2012-07-26 | Qd Vision, Inc. | Semiconductor nanocrystals and methods of preparation |
DK2659029T3 (en) | 2010-12-28 | 2018-04-16 | Life Technologies Corp | NANO CRYSTALS WITH MIXTURES OF ORGANIC LIGANDS |
TWI596188B (zh) | 2012-07-02 | 2017-08-21 | 奈米系統股份有限公司 | 高度發光奈米結構及其製造方法 |
CN103122484B (zh) * | 2013-01-10 | 2015-04-15 | 华北电力大学 | 一种调控CsI(Na)晶体发光特性的方法 |
US10224422B2 (en) * | 2014-12-18 | 2019-03-05 | The Regents Of The University Of California | Method to fabricate quantum dot field-effect transistors without bias-stress effect |
CN104650856B (zh) * | 2015-02-26 | 2017-01-04 | 江汉大学 | 一种硫化镉量子点溶液的制备方法 |
WO2016185932A1 (ja) * | 2015-05-15 | 2016-11-24 | 富士フイルム株式会社 | コアシェル粒子、コアシェル粒子の製造方法およびフィルム |
TWI737610B (zh) * | 2015-05-20 | 2021-09-01 | 美商納諾光子公司 | 用於改進發光二極體之效率的程序 |
CN104926155B (zh) * | 2015-05-28 | 2017-09-22 | 福州大学 | 一种金属/有机壳核量子点‑半导体量子点复合发光膜的制备方法 |
EP3653686A1 (de) * | 2015-09-10 | 2020-05-20 | Merck Patent GmbH | Lichtkonvertierendes material |
US10836960B2 (en) | 2015-09-15 | 2020-11-17 | 3M Innovative Properties Company | Additive stabilized composite nanoparticles |
JP2018529832A (ja) | 2015-09-15 | 2018-10-11 | スリーエム イノベイティブ プロパティズ カンパニー | 添加剤安定化複合ナノ粒子 |
US10508236B2 (en) | 2015-10-27 | 2019-12-17 | Lumileds Llc | Wavelength converting material for a light emitting device |
KR102034615B1 (ko) | 2016-02-17 | 2019-10-21 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 안정화 불소화합물계 공중합체를 갖는 양자점 |
US11345849B2 (en) | 2016-07-20 | 2022-05-31 | 3M Innovative Properties Company | Stabilizing styrenic polymer for quantum dots |
WO2018017513A1 (en) | 2016-07-20 | 2018-01-25 | 3M Innovative Properties Company | Stabilizing styrenic polymer for quantum dots |
JP6756251B2 (ja) * | 2016-11-29 | 2020-09-16 | 東洋インキScホールディングス株式会社 | 量子ドットおよび量子ドット含有組成物 |
CN113039256A (zh) * | 2018-05-30 | 2021-06-25 | C·伊彭 | 发蓝光ZnSe1-xTex合金纳米晶体的合成方法 |
CN110616072A (zh) * | 2018-06-20 | 2019-12-27 | 深圳Tcl工业研究院有限公司 | 一种InP量子点的后处理方法 |
WO2020073927A1 (zh) * | 2018-10-09 | 2020-04-16 | Tcl集团股份有限公司 | 核壳结构纳米晶的制备方法 |
WO2020174604A1 (ja) * | 2019-02-27 | 2020-09-03 | シャープ株式会社 | 発光素子およびそれを用いた表示装置 |
KR20200122717A (ko) | 2019-04-18 | 2020-10-28 | 삼성전자주식회사 | 리튬 함유 무카드뮴 양자점, 그 제조 방법, 및 이를 포함하는 전자 소자 |
KR20200122719A (ko) | 2019-04-18 | 2020-10-28 | 삼성전자주식회사 | 코어쉘 양자점, 그 제조 방법, 및 이를 포함하는 전자 소자 |
KR102652436B1 (ko) * | 2019-04-18 | 2024-03-27 | 삼성전자주식회사 | ZnTeSe 기반의 양자점 |
CN112397671B (zh) * | 2019-08-19 | 2022-08-23 | Tcl科技集团股份有限公司 | 一种改性硫化锌及其制备方法与量子点发光二极管 |
CN112397657B (zh) * | 2019-08-19 | 2022-05-03 | Tcl科技集团股份有限公司 | 一种改性硫化锌及其制备方法与量子点发光二极管 |
CN113046064A (zh) * | 2019-12-28 | 2021-06-29 | Tcl集团股份有限公司 | 量子点材料及其制备方法、量子点发光二极管和发光装置 |
CN111592877B (zh) * | 2020-03-02 | 2021-05-14 | 河南大学 | 一种核壳结构量子点及其制备方法 |
CN113060706B (zh) * | 2021-03-23 | 2024-02-09 | 中国科学技术大学 | 一种尺寸可调的胶体ZnSe量子线的制备方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6241819B1 (en) * | 1993-04-20 | 2001-06-05 | North American Philips Corp. | Method of manufacturing quantum sized doped semiconductor particles |
US6322901B1 (en) | 1997-11-13 | 2001-11-27 | Massachusetts Institute Of Technology | Highly luminescent color-selective nano-crystalline materials |
CA2424415C (en) * | 2000-10-04 | 2010-09-28 | The Board Of Trustees Of The University Of Arkansas | Synthesis of colloidal nanocrystals |
US6576291B2 (en) * | 2000-12-08 | 2003-06-10 | Massachusetts Institute Of Technology | Preparation of nanocrystallites |
CN1169906C (zh) * | 2000-12-14 | 2004-10-06 | 中国科学院长春应用化学研究所 | 有机/无机纳米硫化镉杂化发光材料的合成方法 |
WO2003021635A2 (en) * | 2001-09-05 | 2003-03-13 | Rensselaer Polytechnic Institute | Passivated nanoparticles, method of fabrication thereof, and devices incorporating nanoparticles |
JP2005503984A (ja) * | 2001-09-19 | 2005-02-10 | エバーグリーン ソーラー, インコーポレイテッド | 化学的に接近可能な表面を有するケイ素ナノクリスタルを調製するための高収率方法 |
WO2003030227A2 (en) * | 2001-10-02 | 2003-04-10 | Quantum Dot Corporation | Method of semiconductor nanoparticle synthesis |
KR100449860B1 (ko) | 2001-12-15 | 2004-09-22 | 에스케이 텔레콤주식회사 | 이동 통신망에서의 심플 인터넷 프로토콜 패킷 망 기반이동 화상전화 서비스 제공 방법 |
US6878184B1 (en) * | 2002-08-09 | 2005-04-12 | Kovio, Inc. | Nanoparticle synthesis and the formation of inks therefrom |
CN1174080C (zh) * | 2002-10-10 | 2004-11-03 | 武汉大学 | CdSe/CdS或CdSe/ZnS核/壳型量子点的制备方法 |
US6853669B2 (en) * | 2002-12-10 | 2005-02-08 | Ut-Battelle, Llc | Nanocrystal waveguide (NOW) laser |
-
2003
- 2003-09-09 KR KR1020030063229A patent/KR100796122B1/ko active IP Right Grant
-
2004
- 2004-02-25 US US10/785,067 patent/US7288468B2/en not_active Expired - Lifetime
- 2004-08-26 EP EP10185929.6A patent/EP2284296B1/en active Active
- 2004-08-26 EP EP04255157A patent/EP1516944B1/en active Active
- 2004-09-09 CN CNA200410078547XA patent/CN1595673A/zh active Pending
- 2004-09-09 CN CN2010102698293A patent/CN101974335B/zh active Active
- 2004-09-09 JP JP2004262380A patent/JP4928071B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
US20050051769A1 (en) | 2005-03-10 |
JP2005101601A (ja) | 2005-04-14 |
EP1516944A1 (en) | 2005-03-23 |
CN1595673A (zh) | 2005-03-16 |
CN101974335B (zh) | 2013-11-13 |
US7288468B2 (en) | 2007-10-30 |
EP2284296A1 (en) | 2011-02-16 |
EP1516944B1 (en) | 2011-12-21 |
KR100796122B1 (ko) | 2008-01-21 |
EP2284296B1 (en) | 2016-05-18 |
CN101974335A (zh) | 2011-02-16 |
KR20050026227A (ko) | 2005-03-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4928071B2 (ja) | 半導体ナノ結晶の量子効率向上方法、半導体ナノ結晶および有機電気発光素子 | |
KR100621308B1 (ko) | 다중 파장에서 발광하는 황화 카드뮴 나노 결정의 제조방법 및 그에 의해 수득된 황화 카드뮴 나노 결정 | |
Xiang et al. | Studies on highly luminescent AgInS2 and Ag–Zn–In–S quantum dots | |
JP4933723B2 (ja) | 合金形態の半導体結晶、その製造方法及び有機電界発光素子 | |
Talapin et al. | Synthesis and surface modification of amino-stabilized CdSe, CdTe and InP nanocrystals | |
Singh et al. | Magic-sized CdSe nanoclusters: a review on synthesis, properties and white light potential | |
Niu et al. | One-pot/three-step synthesis of zinc-blende CdSe/CdS core/shell nanocrystals with thick shells | |
JP2019515338A (ja) | 厚いシェルコーティングを有する安定したInP量子ドット及びこれを生成する方法 | |
Bhand et al. | Synthesis of CdTe, CdSe and CdTe/CdSe core/shell QDs from wet chemical colloidal method | |
Cholan et al. | Effect of poly ethylene glycol (PEG) as surfactant on cerium doped ZnS nanoparticles | |
Liu et al. | One-step aqueous synthesis of highly luminescent hydrophilic AgInZnS quantum dots | |
Sun et al. | Physical origins of high photoluminescence quantum yield in α-CsPbI3 nanocrystals and their stability | |
Chakrabarty et al. | Cadmium deoxycholate: a new and efficient precursor for highly luminescent CdSe nanocrystals | |
KR100745317B1 (ko) | 화합물 반도체 나노결정의 표면 처리를 통한 양자효율 향상 | |
Wang et al. | High quality zinc-blende CdSe nanocrystals synthesized in a hexadecylamine–oleic acid–paraffin liquid mixture | |
Jia et al. | Growth kinetics of CdSe nanocrystals synthesized in liquid paraffin via one-pot method | |
Zhang et al. | Morphological and luminescent evolution of near-infrared-emitting CdTe x Se 1− x nanocrystals | |
Yang et al. | Photoluminescent Enhancement of CdSe/Cd1− x Zn x S Quantum Dots by Hexadecylamine at Room Temperature | |
Koktysh et al. | PbS/PbSe structures with core–shell type morphology synthesized from PbS nanocrystals | |
TW201947017A (zh) | 奈米粒子 | |
Ramrakhiani et al. | Electroluminescence in chalcogenide nanocrystals and nanocomposites | |
Samokhvalov et al. | Current methods of the synthesis of luminescent semiconductor nanocrystals for biomedical applications | |
Magalhães | Synthesis of Inorganic Halide Perovskite Quantum Dots for Photoluminescence Applications | |
Xie et al. | Gram-scale, cost-effective and eco-friendly synthesis, structural and optical properties of Fe: CdS colloidal nanocrystals | |
Ambekar et al. | Quantum Dots and Their Synthesis Processes |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070606 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110607 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110907 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110927 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111227 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120124 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120210 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150217 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4928071 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |