CN101969094B - 一种用于热电材料的涂层及其含有该涂层的器件 - Google Patents

一种用于热电材料的涂层及其含有该涂层的器件 Download PDF

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Publication number
CN101969094B
CN101969094B CN200910055439A CN200910055439A CN101969094B CN 101969094 B CN101969094 B CN 101969094B CN 200910055439 A CN200910055439 A CN 200910055439A CN 200910055439 A CN200910055439 A CN 200910055439A CN 101969094 B CN101969094 B CN 101969094B
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CN
China
Prior art keywords
coating
metal
thermoelectric
layer
opposite directions
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Expired - Fee Related
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CN200910055439A
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English (en)
Chinese (zh)
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CN101969094A (zh
Inventor
陈立东
黄向阳
李小亚
夏绪贵
何琳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Institute of Ceramics of CAS
Corning Inc
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Shanghai Institute of Ceramics of CAS
Corning Inc
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Priority to CN200910055439A priority Critical patent/CN101969094B/zh
Application filed by Shanghai Institute of Ceramics of CAS, Corning Inc filed Critical Shanghai Institute of Ceramics of CAS
Priority to JP2012522946A priority patent/JP2013500608A/ja
Priority to US13/386,732 priority patent/US20120164416A1/en
Priority to IN805DEN2012 priority patent/IN2012DN00805A/en
Priority to EP10804946.1A priority patent/EP2460182B1/en
Priority to KR1020127004926A priority patent/KR20120085734A/ko
Priority to PCT/US2010/043317 priority patent/WO2011014479A1/en
Publication of CN101969094A publication Critical patent/CN101969094A/zh
Application granted granted Critical
Publication of CN101969094B publication Critical patent/CN101969094B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G51/00—Compounds of cobalt
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/853—Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/50—Solid solutions
    • C01P2002/52—Solid solutions containing elements as dopants
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/03—Particle morphology depicted by an image obtained by SEM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y10T428/2495—Thickness [relative or absolute]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
  • Chemical Or Physical Treatment Of Fibers (AREA)
  • Laminated Bodies (AREA)
CN200910055439A 2009-07-27 2009-07-27 一种用于热电材料的涂层及其含有该涂层的器件 Expired - Fee Related CN101969094B (zh)

Priority Applications (7)

Application Number Priority Date Filing Date Title
CN200910055439A CN101969094B (zh) 2009-07-27 2009-07-27 一种用于热电材料的涂层及其含有该涂层的器件
US13/386,732 US20120164416A1 (en) 2009-07-27 2010-07-27 Coating for thermoelectric materials and a device containing the same
IN805DEN2012 IN2012DN00805A (OSRAM) 2009-07-27 2010-07-27
EP10804946.1A EP2460182B1 (en) 2009-07-27 2010-07-27 A coating for thermoelectric materials and a device containing the same
JP2012522946A JP2013500608A (ja) 2009-07-27 2010-07-27 熱電材料被覆及び熱電材料を含む装置
KR1020127004926A KR20120085734A (ko) 2009-07-27 2010-07-27 열전 물질용 코팅 및 이를 포함한 장치
PCT/US2010/043317 WO2011014479A1 (en) 2009-07-27 2010-07-27 A coating for thermoelectric materials and a device containing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN200910055439A CN101969094B (zh) 2009-07-27 2009-07-27 一种用于热电材料的涂层及其含有该涂层的器件

Publications (2)

Publication Number Publication Date
CN101969094A CN101969094A (zh) 2011-02-09
CN101969094B true CN101969094B (zh) 2012-08-29

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CN200910055439A Expired - Fee Related CN101969094B (zh) 2009-07-27 2009-07-27 一种用于热电材料的涂层及其含有该涂层的器件

Country Status (7)

Country Link
US (1) US20120164416A1 (OSRAM)
EP (1) EP2460182B1 (OSRAM)
JP (1) JP2013500608A (OSRAM)
KR (1) KR20120085734A (OSRAM)
CN (1) CN101969094B (OSRAM)
IN (1) IN2012DN00805A (OSRAM)
WO (1) WO2011014479A1 (OSRAM)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5638329B2 (ja) * 2010-09-27 2014-12-10 京セラ株式会社 熱電素子及びこれを備えた熱電モジュール
EP2633562B1 (en) * 2010-10-27 2015-01-14 Basf Se Thermoelectric module and process for production thereof
CN103146301B (zh) * 2011-12-06 2015-08-19 中国科学院上海硅酸盐研究所 方钴矿基热电材料及器件用热防护涂层及其制备方法
CN102514282B (zh) * 2011-12-15 2014-07-16 济南大学 一种适用于CoSb3基热电材料的防护涂层及其制备方法
JP6152262B2 (ja) * 2012-11-28 2017-06-21 株式会社フジコー 熱電変換装置及びその製造方法
CN104508846B (zh) * 2013-06-11 2016-02-10 松下知识产权经营株式会社 热电转换模块
CN104465976B (zh) * 2013-09-22 2017-06-06 中国科学院上海硅酸盐研究所 受保护的热电元件、包含所述热电元件的热电器件及其形成方法
EP3226315B1 (en) * 2014-12-16 2020-02-26 LG Chem, Ltd. Thermoelectric powder and thermoelectric material prepared using the same
NO348530B1 (en) 2015-02-13 2025-03-03 Tegma As Method of manufacturing a sealed thermoelectric module
NO341705B1 (en) 2016-02-22 2018-01-02 Tegma As Thermoelectric half-cell and method of production
JP7021872B2 (ja) * 2016-10-20 2022-02-17 株式会社豊田中央研究所 複合熱電材料及びその製造方法
CN107565010B (zh) * 2017-09-01 2019-08-16 华北电力大学（保定） 纳晶热电材料的制备方法
JP6848906B2 (ja) 2018-03-12 2021-03-24 株式会社豊田中央研究所 コーティング液及び熱電部材の製造方法
EP3588590B1 (en) * 2018-06-22 2020-05-13 CS Centro Stirling, S.Coop. Thermoelectric module
JP7075997B2 (ja) * 2018-06-28 2022-05-26 日本パーカライジング株式会社 熱電変換素子及び当該熱電変換素子を備えた熱電変換モジュール
KR102529200B1 (ko) * 2018-09-27 2023-05-03 주식회사 엘지화학 열전 소재 및 그 제조 방법
CN109338289B (zh) * 2018-09-28 2020-06-12 西安航空制动科技有限公司 一种碳/碳复合材料抗氧化涂层的制备方法
CN113272979B (zh) 2018-11-16 2024-12-27 Ats知识产权有限责任公司 热电发电机中用于提高性能的热透镜电极
CN110098312B (zh) * 2019-04-11 2021-08-31 中国科学院上海硅酸盐研究所 一种分段热电材料的连接方法

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CN1084527A (zh) * 1992-09-24 1994-03-30 阿部政和 废聚氯乙烯的再生方法及其再生装置
JP2000252526A (ja) * 1998-06-30 2000-09-14 Matsushita Electric Ind Co Ltd スカッテルダイト系熱電材料及び熱電カップル並びにその製造方法
CN1647288A (zh) * 2002-04-09 2005-07-27 松下电器产业株式会社 热电变换材料及其制造方法

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US5100486A (en) * 1989-04-14 1992-03-31 The United States Of America As Represented By The United States Department Of Energy Method of coating metal surfaces to form protective metal coating thereon
JPH06275871A (ja) * 1993-03-19 1994-09-30 Mitsubishi Heavy Ind Ltd 熱電発電モジュール
JP3188070B2 (ja) * 1993-10-07 2001-07-16 三菱重工業株式会社 熱電発電モジュール
WO1998025761A1 (en) * 1996-12-09 1998-06-18 Nippon Sheet Glass Co., Ltd. Non-fogging article and process for the production thereof
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US7321157B2 (en) * 2004-07-23 2008-01-22 Gm Global Technology Operations, Inc. CoSb3-based thermoelectric device fabrication method
US20060076046A1 (en) * 2004-10-08 2006-04-13 Nanocoolers, Inc. Thermoelectric device structure and apparatus incorporating same
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TW201042789A (en) * 2009-04-02 2010-12-01 Basf Se Thermoelectric material coated with a protective layer
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CN1084527A (zh) * 1992-09-24 1994-03-30 阿部政和 废聚氯乙烯的再生方法及其再生装置
JP2000252526A (ja) * 1998-06-30 2000-09-14 Matsushita Electric Ind Co Ltd スカッテルダイト系熱電材料及び熱電カップル並びにその製造方法
CN1647288A (zh) * 2002-04-09 2005-07-27 松下电器产业株式会社 热电变换材料及其制造方法

Also Published As

Publication number Publication date
EP2460182B1 (en) 2016-01-13
EP2460182A1 (en) 2012-06-06
US20120164416A1 (en) 2012-06-28
CN101969094A (zh) 2011-02-09
EP2460182A4 (en) 2014-01-01
IN2012DN00805A (OSRAM) 2015-06-26
JP2013500608A (ja) 2013-01-07
KR20120085734A (ko) 2012-08-01
WO2011014479A1 (en) 2011-02-03

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