CN101943867B - 邻近曝光装置、其曝光光束形成方法及面板基板制造方法 - Google Patents

邻近曝光装置、其曝光光束形成方法及面板基板制造方法 Download PDF

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Publication number
CN101943867B
CN101943867B CN2010102153535A CN201010215353A CN101943867B CN 101943867 B CN101943867 B CN 101943867B CN 2010102153535 A CN2010102153535 A CN 2010102153535A CN 201010215353 A CN201010215353 A CN 201010215353A CN 101943867 B CN101943867 B CN 101943867B
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China
Prior art keywords
amplifying
emitting elements
light
lens
semiconductor light
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Expired - Fee Related
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CN2010102153535A
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English (en)
Chinese (zh)
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CN101943867A (zh
Inventor
手塚秀和
土井秀明
根本亮二
吉武康裕
针山达雄
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G03F7/2006—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light using coherent light; using polarised light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0275—Photolithographic processes using lasers

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Liquid Crystal (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN2010102153535A 2009-07-07 2010-06-25 邻近曝光装置、其曝光光束形成方法及面板基板制造方法 Expired - Fee Related CN101943867B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009160727A JP5355261B2 (ja) 2009-07-07 2009-07-07 プロキシミティ露光装置、プロキシミティ露光装置の露光光形成方法、及び表示用パネル基板の製造方法
JP2009-160727 2009-07-07

Publications (2)

Publication Number Publication Date
CN101943867A CN101943867A (zh) 2011-01-12
CN101943867B true CN101943867B (zh) 2012-11-07

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CN2010102153535A Expired - Fee Related CN101943867B (zh) 2009-07-07 2010-06-25 邻近曝光装置、其曝光光束形成方法及面板基板制造方法

Country Status (4)

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JP (1) JP5355261B2 (ja)
KR (1) KR101133371B1 (ja)
CN (1) CN101943867B (ja)
TW (1) TWI414903B (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013171088A (ja) * 2012-02-17 2013-09-02 Hitachi High-Technologies Corp プロキシミティ露光装置、プロキシミティ露光装置の露光光形成方法、及び表示用パネル基板の製造方法
KR101649129B1 (ko) * 2015-08-21 2016-08-18 (주)블루코어 노광용 광원모듈 유닛 및 그 광원모듈 유닛이 구비된 노광장치
DE102017217345B4 (de) 2017-09-28 2019-12-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Optischer Strahlformer
CN110196517B (zh) * 2019-05-16 2021-09-03 Tcl华星光电技术有限公司 一种紫外线照射机

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1296604A (zh) * 1999-03-02 2001-05-23 松下电器产业株式会社 照明装置和具有该照明装置的显示装置
CN1602451A (zh) * 2001-11-07 2005-03-30 应用材料有限公司 无掩膜光子电子点格栅阵列光刻机
CN101154052A (zh) * 2006-09-28 2008-04-02 株式会社日立高科技 曝光用光源、曝光装置、曝光方法、以及面板基板的制造方法

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JPH07301800A (ja) * 1994-05-10 1995-11-14 Fujitsu General Ltd 液晶プロジェクタの光源装置
JPH10261577A (ja) * 1997-03-21 1998-09-29 Nikon Corp 露光量制御方法及び該方法を使用する走査型露光装置
TW418343B (en) * 1999-11-16 2001-01-11 Nippon Kogaku Kk The method of projection exposure and device thereof and projection optics system
JP2001343706A (ja) * 2000-05-31 2001-12-14 Sony Corp 映像表示装置
JP2003330109A (ja) * 2002-05-09 2003-11-19 Seiko Epson Corp 照明装置および投射型表示装置
JP4105616B2 (ja) * 2002-08-15 2008-06-25 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフ投影装置およびこの装置用の反射鏡アセンブリ
JP2004133127A (ja) * 2002-10-09 2004-04-30 Sharp Corp 露光装置
JP2009009144A (ja) * 2003-04-11 2009-01-15 Ricoh Co Ltd 原稿読み取り装置及び画像形成装置
JP4328320B2 (ja) * 2004-09-03 2009-09-09 サンエー技研株式会社 露光用光源
JP2007072371A (ja) * 2005-09-09 2007-03-22 V Technology Co Ltd 露光装置
JP2008070769A (ja) * 2006-09-15 2008-03-27 Ricoh Co Ltd 光源ユニット、照明装置およびプロジェクタ装置
JP5282368B2 (ja) * 2007-01-31 2013-09-04 株式会社リコー 画像読取装置、および画像形成装置
KR20090115712A (ko) * 2007-02-20 2009-11-05 칼 짜이스 에스엠테 아게 다수의 일차 광원을 갖는 광학 소자
JP4937808B2 (ja) * 2007-03-26 2012-05-23 フェニックス電機株式会社 光源装置ならびにこれを用いた露光装置
JP5345443B2 (ja) * 2009-04-21 2013-11-20 株式会社日立ハイテクノロジーズ 露光装置、露光光照射方法、及び表示用パネル基板の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1296604A (zh) * 1999-03-02 2001-05-23 松下电器产业株式会社 照明装置和具有该照明装置的显示装置
CN1602451A (zh) * 2001-11-07 2005-03-30 应用材料有限公司 无掩膜光子电子点格栅阵列光刻机
CN101154052A (zh) * 2006-09-28 2008-04-02 株式会社日立高科技 曝光用光源、曝光装置、曝光方法、以及面板基板的制造方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JP特开2004-133127A 2004.04.30
JP特开平10-261577A 1998.09.29

Also Published As

Publication number Publication date
KR101133371B1 (ko) 2012-04-06
KR20110004276A (ko) 2011-01-13
TWI414903B (zh) 2013-11-11
JP2011017770A (ja) 2011-01-27
CN101943867A (zh) 2011-01-12
JP5355261B2 (ja) 2013-11-27
TW201102767A (en) 2011-01-16

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