CN101943867B - Adjacent exposure device, forming method of exposure beam and manufacturing method of panel substrate - Google Patents
Adjacent exposure device, forming method of exposure beam and manufacturing method of panel substrate Download PDFInfo
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- CN101943867B CN101943867B CN2010102153535A CN201010215353A CN101943867B CN 101943867 B CN101943867 B CN 101943867B CN 2010102153535 A CN2010102153535 A CN 2010102153535A CN 201010215353 A CN201010215353 A CN 201010215353A CN 101943867 B CN101943867 B CN 101943867B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
- G03F7/2006—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light using coherent light; using polarised light
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0275—Photolithographic processes using lasers
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- Optics & Photonics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The invention provides an adjacent exposure device, a forming method of an exposure beam and a manufacturing method of a panel substrate. A reflection component (50) is arranged surrounding an optical path from a plurality of amplifying lenses (43) to a fly lens (45). A semiconductor luminous element (42) carried on a peripheral part of a base substrate (51) and the amplifying lenses (43) corresponding to the semiconductor luminous element are configured that one end of the light generated from the semiconductor luminous element (42) and amplified by the corresponding amplifying lenses (43) is entered into the fly lens (45) in a regulated angle of a radiating surface which is not deviated from the fly lens (45). And the reflection component (50) is configured that the other end of the light generated from the semiconductor luminous element (42) carried on a peripheral part of a base substrate (41) and amplified by the corresponding amplifying lenses (43) is entered into the fly lens (45) in a regulated angle of a radiating surface which is not deviated from the fly lens (45) after reflecting by the reflection component (50).
Description
Technical field
The present invention relates to a kind of proximity exposure device, its exposing light beam formation method and display panel substrate manufacturing approach; Particularly relate in a kind of manufacturing of display panel (panel) substrate at LCD (display) device etc.; Light source for producing exposing light beam uses a plurality of semiconductor light-emitting elements, and uses fly lens (flyeye lens) as vicinity (proximity) exposure device of optical integrator (optical integrator), the exposing light beam formation method of proximity exposure device and the manufacturing approach of using the display panel substrate of these apparatus and method.
Background technology
Thin film transistor (TFT) (the Thin FilmTransistor of the LCD device that uses as display panel; TFT) substrate or chromatic filter (color filter) substrate, plasma (plasma) display pannel are with substrate, organic electroluminescent (Electroluminescence; EL) manufacturing of display panel substrate etc. is to use exposure device, on substrate, forms pattern through photoetching (photolithography) technology and carries out.As exposure device; Use lens (lens) or mirror are arranged with projection (projection) mode on graphic pattern projection to the substrate of mask (mask) and small gap (adjacent gap, proximity gap) is set and between mask and substrate with the contiguous mode of pattern transfer to the substrate of mask.Contiguous mode is compared with projection pattern, pattern image dissection poor-performing, but illuminating optical system is simple in structure, and processing power is higher, is suitable for the volume production purposes.
In the past, for the light source of the generation exposing light beam of proximity exposure device, use be generally gases at high pressure (gas) to be sealing into the lamp in the bulb (bulb) such as mercury lamp, Halogen lamp LED (halogen lamp), xenon lamp (xenon lamp) etc.The life-span of these lamps is shorter, after the service time that surpasses regulation, must change lamp.For example, be under 750 hours the situation in the life-span of lamp, if light a lamp continuously, then must replacing in per approximately 1 month 1 time.When lamp was changed, owing to exposure-processed will be interrupted, so productivity can reduce.
On the other hand, in patent documentation 1, disclosed a kind ofly in the exposure device of projection pattern, used the solid state light emitter element of light emitting diode (diode) etc. to be used as the technology of the light source of exposing light beam.The life-span of the semiconductor light-emitting elements of light emitting diode etc. the length of comparing with lamp reaches thousands of hours, and the situation that exposure-processed is interrupted is less, therefore, can expect productive raising.
[prior art document]
[patent documentation]
[patent documentation 1] Japanese Patent Laid is opened the 2006-332077 communique
When using a plurality of semiconductor light-emitting elements, as 1 record of patent documentation, use fly lens to be used as optical integrator for the light source that produces exposing light beam.Fly lens is that a plurality of simple lenses are the lens arra (lens array) that arrangement in length and breadth forms.Figure 10 is the figure of the action of explanation fly lens.Expose to fly lens 45 after will amplifying respectively through amplifying lens 43 from the light that a plurality of semiconductor light-emitting elements 42 produce.Fly lens 45 will be on optical projection to the identical shadow surface after a plurality of amplifying lenses 43 amplify and said light is overlapped, and makes the Illumination Distribution homogenising.At this moment, if incident angle β, then is incident to the shadow surface that the light of fly lens 45 can depart from fly lens 45 greater than predetermined angular.
In recent years, along with the big pictureization of display panel, substrate maximizes, and for the light source of exposing light beam, just requires to use the higher light source of illumination.In the proximity exposure device of the exposure that is mainly used in large substrate; When using a plurality of semiconductor light-emitting elements when producing the light source of exposing light beam; The output of semiconductor light-emitting elements is much smaller than in the past lamp, therefore, must use hundreds of semiconductor light-emitting elements about thousands of abreast.There is following problems this moment: become the shadow surface that departs from fly lens greatly from the semiconductor light-emitting elements generation in the outside and the part of the light after amplifying lens amplifies to the incident angle of fly lens, thereby be not used in the formation of exposing light beam.
Because the defective that above-mentioned existing proximity exposure device exists; The inventor is based on being engaged in this type of product design manufacturing abundant for many years practical experience and professional knowledge; And cooperate the utilization of studying the science, actively study innovation, in the hope of founding a kind of new proximity exposure device, its exposing light beam formation method and display panel substrate manufacturing approach; Can improve general existing proximity exposure device, make it have more practicality.Through constantly research, design, and, found out the present invention of true tool practical value finally through after studying sample and improvement repeatedly.
Summary of the invention
Fundamental purpose of the present invention is; Overcome the defective that existing proximity exposure device exists; And a kind of new proximity exposure device, its exposing light beam formation method and display panel substrate manufacturing approach are provided; Technical matters to be solved is that it is produced and through amplifying lens and the light after amplifying when overlapping, efficient utilizes the light of each semiconductor light-emitting elements to form the higher exposing light beam of illumination well utilizing fly lens to make from a plurality of semiconductor light-emitting elements.And, the productivity of display panel substrate is improved, be very suitable for practicality.
The present invention compared with prior art has tangible advantage and beneficial effect.Know by above,, the invention provides a kind of proximity exposure device, its exposing light beam formation method and display panel substrate manufacturing approach for achieving the above object.
The object of the invention and solve its technical matters and adopt following technical scheme to realize.Proximity exposure device of the present invention comprises: a plurality of semiconductor light-emitting elements produce the light that is used for forming exposing light beam; Bottom (base) substrate carries a plurality of semiconductor light-emitting elements; A plurality of amplifying lenses are established corresponding to each semiconductor light-emitting elements, will amplify from the light that each semiconductor light-emitting elements produces; And fly lens; By through a plurality of amplifying lenses and the light after amplifying shines; And; Utilize fly lens to make and the light after amplifying overlaps and form exposing light beam through a plurality of amplifying lenses; Wherein, comprise the light path till from a plurality of amplifying lenses to fly lens and the reflecting member that is provided with, the semiconductor light-emitting elements and the amplifying lens corresponding with these semiconductor light-emitting elements that are equipped on the peripheral part of bottom substrate are configured to; From this semiconductor light-emitting elements produce and through the amplifying lens of correspondence and a wherein end of the light after amplifying at the predetermined angular of the shadow surface that does not depart from fly lens with interior and be incident to fly lens; Reflecting member is configured to, from the semiconductor light-emitting elements of the peripheral part that is equipped on the bottom substrate produce and through the amplifying lens of correspondence and the other end of the light after amplifying by this reflecting member after reflecting, at the predetermined angular of the shadow surface that does not depart from fly lens with the interior fly lens that is incident to.
The object of the invention and solve its technical matters and also adopt following technical scheme to realize.The exposing light beam formation method of proximity exposure device of the present invention; A plurality of semiconductor light-emitting elements are equipped on the bottom substrate; Produce the light that is used for forming exposing light beam from each semiconductor light-emitting elements; Corresponding to each semiconductor light-emitting elements a plurality of amplifying lenses are set; After the amplifying lens of the light that will produce from each semiconductor light-emitting elements through correspondence amplifies; Expose to fly lens, utilize fly lens to make and the light after amplifying overlaps and forms exposing light beam, wherein through a plurality of amplifying lenses; Light path till from a plurality of amplifying lenses to fly lens and reflecting member is set; The semiconductor light-emitting elements of the peripheral part that is equipped on the bottom substrate and the amplifying lens corresponding with these semiconductor light-emitting elements are configured to, from this semiconductor light-emitting elements produce and through the amplifying lens of correspondence and a wherein end of the light after amplifying at the predetermined angular of the shadow surface that does not depart from fly lens with interior and be incident to fly lens, reflecting member is configured to; From the semiconductor light-emitting elements of the peripheral part that is equipped on the bottom substrate produce and through the amplifying lens of correspondence and the other end of the light after amplifying by this reflecting member after reflecting, at the predetermined angular of the shadow surface that does not depart from fly lens with the interior fly lens that is incident to.
Produce and and in the light after amplifying from the semiconductor light-emitting elements of the peripheral part that is equipped on the bottom substrate through the amplifying lens of correspondence; The light of the fly lens of direct irradiation between till a wherein end of outer thoughtful this light of fly lens at the predetermined angular of the shadow surface that can not depart from fly lens with interior and be incident to fly lens, thereby be used in the formation of exposing light beam.And; Produce and and in the light after amplifying from this semiconductor light-emitting elements through the amplifying lens of correspondence; After the light of the fly lens of direct irradiation between till the other end of outer thoughtful this light of fly lens is not reflected by catoptron; At the predetermined angular of the shadow surface that does not depart from fly lens with interior and be incident to fly lens, thereby 0 is used in the formation of exposing light beam.Thereby, produce and through amplifying lens and the light after amplifying when overlapping when utilizing fly lens to make, but efficient utilizes the light of each semiconductor light-emitting elements to form the higher exposing light beam of illumination well from a plurality of semiconductor light-emitting elements.
And then; In the proximity exposure device of the present invention; With the optical axis of the semiconductor light-emitting elements of the most peripheral that is equipped on the bottom substrate and the amplifying lens corresponding with these semiconductor light-emitting elements towards the periphery of fly lens and dispose, and with catoptron and this optical axis almost parallel disposing.And; In the exposing light beam formation method of proximity exposure device of the present invention; With the optical axis of the semiconductor light-emitting elements of the most peripheral that is equipped on the bottom substrate and the amplifying lens corresponding with these semiconductor light-emitting elements towards the periphery of fly lens and dispose, and with catoptron and this optical axis almost parallel disposing.Owing to the optical axis of the semiconductor light-emitting elements of the most peripheral that will be equipped on the bottom substrate and the amplifying lens corresponding with these semiconductor light-emitting elements is disposing towards the periphery of fly lens; Therefore; For make from this semiconductor light-emitting elements produce and through the amplifying lens of correspondence and a wherein end of the light after amplifying at predetermined angular with the interior fly lens that is incident to, distance then required, till from fly lens to this semiconductor light-emitting elements will diminish.
And then in the proximity exposure device of the present invention, the bottom substrate is that a plurality of smooth substrates are made up and constitute, and a plurality of amplifying lenses constitute array-like to each this substrate.And, in the exposing light beam formation method of proximity exposure device of the present invention, a plurality of smooth substrates are made up and constitute the bottom substrate, with a plurality of amplifying lenses to each this substrate and constitute array-like.Thereby easily semiconductor light-emitting elements is mounted on the bottom substrate, and adjusts the optical axis of each amplifying lens easily.
The object of the invention and solve its technical matters and adopt following technical scheme to realize in addition again.In the manufacturing approach of display panel substrate of the present invention; Use above-mentioned any proximity exposure device to carry out the exposure of substrate; Perhaps; The exposing light beam that the exposing light beam formation method of using above-mentioned any proximity exposure device is formed exposes to substrate via mask, to carry out the exposure of substrate.Through using the exposing light beam formation method of above-mentioned proximity exposure device or proximity exposure device, the illumination of exposing light beam increases and the time shutter shortening, and the life-span of the light source of exposing light beam is elongated, so the productivity of display panel substrate is improved.
[effect of invention]
By technique scheme; Proximity exposure device of the present invention, its exposing light beam formation method and display panel substrate manufacturing approach have advantage and beneficial effect at least: according to the exposing light beam formation method of proximity exposure device of the present invention and proximity exposure device; Light path till from a plurality of amplifying lenses to fly lens and reflecting member is set; The semiconductor light-emitting elements of the peripheral part that is equipped on the bottom substrate and the amplifying lens corresponding with these semiconductor light-emitting elements are configured to; From this semiconductor light-emitting elements produce and through the amplifying lens of correspondence and a wherein end of the light after amplifying at the predetermined angular of the shadow surface that does not depart from fly lens with interior and be incident to fly lens; Reflecting member is configured to; From the semiconductor light-emitting elements of the peripheral part that is equipped on the bottom substrate produce and through the amplifying lens of correspondence and the other end of the light after amplifying by this reflecting member after reflecting; At the predetermined angular of the shadow surface that does not depart from fly lens with the interior fly lens that is incident to; Thus, produce and through amplifying lens and the light after amplifying when overlapping when utilizing fly lens to make, but efficient utilizes the light of each semiconductor light-emitting elements to form the higher exposing light beam of illumination well from a plurality of semiconductor light-emitting elements.
And then; Exposing light beam formation method according to proximity exposure device of the present invention and proximity exposure device; With the optical axis of the semiconductor light-emitting elements of the most peripheral that is equipped on the bottom substrate and the amplifying lens corresponding with these semiconductor light-emitting elements towards the periphery of fly lens and dispose; And with reflecting member and this optical axis almost parallel disposing; Thus, can dwindle for make from this semiconductor light-emitting elements produce and through the amplifying lens of correspondence and a wherein end of the light after amplifying at predetermined angular with interior required when being incident to fly lens, distance till from fly lens to this semiconductor light-emitting elements.
And then; Exposing light beam formation method according to proximity exposure device of the present invention and proximity exposure device; A plurality of smooth substrates are made up and constitute the bottom substrate, with a plurality of amplifying lenses to each this substrate and constitute array-like, thus; Can easily semiconductor light-emitting elements be mounted on the bottom substrate, and can easily adjust the optical axis of each amplifying lens.
According to the manufacturing approach of display panel substrate of the present invention, the illumination of exposing light beam increases and the time shutter shortening, and the life-span of the light source of exposing light beam is elongated, therefore the productivity of display panel substrate is improved.
In sum, the invention relates to a kind of proximity exposure device, its exposing light beam formation method and display panel substrate manufacturing approach.The present invention till from a plurality of amplifying lenses to fly lens light path and reflecting member is set.The semiconductor light-emitting elements of the peripheral part that is equipped on the bottom substrate and the amplifying lens corresponding with these semiconductor light-emitting elements are configured to, from this semiconductor light-emitting elements produce and through the amplifying lens of correspondence and a wherein end of the light after amplifying at the predetermined angular of the shadow surface that does not depart from fly lens with interior and be incident to fly lens.And; Reflecting member is configured to; From the semiconductor light-emitting elements of the peripheral part that is equipped on the bottom substrate produce and through the amplifying lens of correspondence and the other end of the light after amplifying by this reflecting member after reflecting, at the predetermined angular of the shadow surface that does not depart from fly lens with interior and be incident to fly lens.The present invention has obvious improvement technically, and has tangible good effect, really is the new design of a novelty, progress, practicality.
Above-mentioned explanation only is the general introduction of technical scheme of the present invention; Understand technological means of the present invention in order can more to know; And can implement according to the content of instructions, and for let of the present invention above-mentioned with other purposes, feature and advantage can be more obviously understandable, below special act preferred embodiment; And conjunction with figs., specify as follows.
Description of drawings
Fig. 1 is the figure of schematic configuration of the proximity exposure device of expression an embodiment of the invention.
Fig. 2 is the figure of an example of expression light source cell.
Fig. 3 a, Fig. 3 b are the figure of optical axis direction of semiconductor light-emitting elements and the amplifying lens of expression light source cell shown in Figure 2.
Fig. 4 is another routine figure of expression light source cell.
Fig. 5 a, Fig. 5 b are the figure of optical axis direction of semiconductor light-emitting elements and the amplifying lens of expression light source cell shown in Figure 4.
Fig. 6 is the figure that the exposing light beam formation method to the proximity exposure device of an embodiment of the invention describes.
Fig. 7 be the optical axis of semiconductor light-emitting elements and the amplifying lens corresponding of the expression most peripheral that will be equipped on the bottom substrate with these semiconductor light-emitting elements than the periphery of fly lens more towards the inboard and figure example that disposes.
Fig. 8 be the expression LCD device the TFT substrate manufacturing process one the example process flow diagram.
Fig. 9 be the expression LCD device base plate of color light filter manufacturing process one the example process flow diagram.
Figure 10 is the figure that the action to fly lens describes.
1: substrate
2: mask
3: base
The 4:X guides
The 5:X objective table
The 6:Y guides
The 7:Y objective table
8: the θ objective table
9: the chuck brace table
10: chuck
20: the mask fixator
30: the exposing light beam illuminating device
32: the collimation lens crowd
33: level crossing
35: illuminance transducer
40: light source cell
41: the bottom substrate
41a, 41b, 41c: substrate
42: semiconductor light-emitting elements
43: amplifying lens
45: fly lens
46: control circuit
47: cooling component
47a: heat conduction member
48: cooling device
50: catoptron
101～106,201～204: step
α: predetermined angular
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention; Below in conjunction with accompanying drawing and preferred embodiment; To proximity exposure device, its exposing light beam method of formationing and its embodiment of display panel substrate manufacturing approach, structure, method, step, characteristic and the effect thereof that proposes according to the present invention, specify as after.
Relevant aforementioned and other technology contents, characteristics and effect of the present invention can clearly appear in the following detailed description that cooperates with reference to graphic preferred embodiment.Explanation for ease, in following embodiment, components identical is represented with identical numbering.
Fig. 1 is the figure of schematic configuration of the proximity exposure device of expression one embodiment of the present invention.The proximity exposure device comprises base (base) 3, X guides (guide) 4, X objective table (stage) 5, Y guides 6, Y objective table 7, θ objective table 8, chuck (chuck) brace table 9, chuck 10, mask fixator (mask holder) 20 and exposing light beam illuminating device 30 and constitutes.The proximity exposure device also comprises temperature control unit (unit) that substrate 1 is moved on the chuck 10 or substrate 1 is managed from substrate transferring robot (robot) that chuck 10 is taken out of and to the temperature in installing etc. except comprising said member.
In addition, below XY direction in the illustrated embodiment be merely illustration, also can directions X and Y direction be changed.
In Fig. 1, chuck 10 is positioned at the exposure position place of the exposure of carrying out substrate 1.In the sky of exposure position, the mask fixator 20 that keeps mask 2 is being set.The periphery of 20 pairs of masks 2 of mask fixator carries out vacuum suction and keeps this mask 2.Disposing exposing light beam illuminating device 30 in the sky of the mask that remains in mask fixator 20 2.In when exposure, see through mask 2 and expose to substrate 1 from the exposing light beam of exposing light beam illuminating device 30, thus with the pattern transfer of mask 2 to the surface of substrate 1, thereby on this substrate 1, form pattern.
Through X objective table 5 to directions X move and Y objective table 7 to the moving of Y direction, chuck 10 moves between load/unload position and exposure position.At the load/unload position place, through X objective table 5 to the moving of directions X, Y objective table 7 to the Y direction move and θ objective table 8 to the rotation of θ direction, be equipped on the prealignment (pre-alignment) of the substrate 1 of chuck 10.At the exposure position place, through X objective table 5 to directions X move and Y objective table 7 to the moving of Y direction, the substrate 1 that is equipped on chuck 10 moves to the stepping (step) of XY direction.And, through X objective table 5 to the moving of directions X, Y objective table 7 to the Y direction move and θ objective table 8 to the rotation of θ direction, carry out the aligning of substrate 1.And, through not shown Z-inclination (tilt) mechanism mask fixator 20 is moved and inclination to Z direction (the drawing above-below direction of Fig. 1), thus, carry out the gap alignment of mask 2 and substrate 1.
In addition; In this embodiment; Make mask fixator 20 move and tilt, carry out the gap alignment of mask 2 and substrate 1 thus, but also the Z-leaning device can be set on chuck brace table 9 to the Z direction; And make chuck 10 move and tilt to the Z direction, carry out the gap alignment of mask 2 and substrate 1 thus.
Exposing light beam illuminating device 30 comprises collimation lens crowd 32, level crossing 33, illuminance transducer 35 and light source cell 40 and constitutes.After the light source cell 40 stated when carrying out the exposure of substrate 1, produce exposing light beam, and when not carrying out the exposure of substrate 1, do not produce exposing light beam.The exposing light beam that produces from light source cell 40 sees through collimation lens crowd 32 and after becoming the parallel rays bundle, exposes to mask 2 by level crossing 33 reflections.Exposing light beam through being irradiated to mask 2 with the pattern transfer of mask 2 to substrate 1, thereby carry out the exposure of substrate 1.
Near the dorsal part of level crossing 33, disposing illuminance transducer 35.The less opening that the part that makes exposing light beam is passed through is being set on level crossing 33.Illuminance transducer 35 receives through the light behind the opening of level crossing 33, measures with the illumination to exposing light beam.The mensuration result of illuminance transducer 35 is imported in the light source cell 40.
Fig. 2 is the figure of an example of expression light source cell.Light source cell 40 comprises bottom substrate 41, semiconductor light-emitting elements 42, amplifying lens 43, fly lens 45, control circuit 46, cooling component 47, cooling device 48 and catoptron 50 and constitutes.On bottom substrate 41, carrying a plurality of semiconductor light-emitting elements 42.Bottom substrate 41 drives each semiconductor light-emitting elements 42 through the control of control circuit 46.Each semiconductor light-emitting elements 42 is made up of light emitting diode or laser diode (laser diode) etc., and produces the light that forms exposing light beam.Control circuit 46 is controlled the driving of each semiconductor light-emitting elements 42 according to the mensuration result of illuminance transducer 35.
In addition, 9 semiconductor light-emitting elements 42 have been shown in Fig. 2, but in the light source cell of reality, have used hundreds of semiconductor light-emitting elements about thousands of.
Corresponding to each semiconductor light-emitting elements 42 amplifying lens 43 is being set, each amplifying lens 43 will amplify from the light that each semiconductor light-emitting elements 42 produces, and makes this rayed to fly lens 45.Fig. 3 a, Fig. 3 b are the figure of optical axis direction of semiconductor light-emitting elements and the amplifying lens of expression light source cell shown in Figure 2.The semiconductor light-emitting elements 42 when the arrow of Fig. 3 a is represented transverse observation bottom substrate 41 and the optical axis direction of amplifying lens 43.And, the semiconductor light-emitting elements 42 the when arrow of Fig. 3 b is represented from top view bottom substrate 41 and the optical axis direction of amplifying lens 43.
Shown in Fig. 3 b, bottom substrate 41 is that a plurality of substrate 41a, 41b, 41c are made up and constitute.In this example, be configured in central portion substrate 41a up and down and about substrate 41b shown in Fig. 3 a, the shape after being a part with the side of cylinder and cutting.And, the surface of the substrate 41a of central portion be with the surface of up and down substrate 41b with about the shape that combines of the surface of substrate 41b.Substrate 41c is smooth, and a plurality of semiconductor light-emitting elements 42 are carrying via heat conduction member 47a obliquely.The optical axis of semiconductor light-emitting elements 42 and the amplifying lens 43 corresponding with these semiconductor light-emitting elements that is equipped on substrate 41a, 41b is shown in Fig. 3 a, Fig. 3 b, towards the central authorities of fly lens 45 and disposing.The optical axis of semiconductor light-emitting elements 42 and the amplifying lens 43 corresponding with these semiconductor light-emitting elements that is equipped on substrate 41c is disposing towards fly lens 45 shown in Fig. 3 a, Fig. 3 b in parallel with each other.
Fig. 4 is another routine figure of expression light source cell.And Fig. 5 a, Fig. 5 b are the figure of optical axis direction of semiconductor light-emitting elements and the amplifying lens of expression light source cell shown in Figure 4.The semiconductor light-emitting elements 42 when the arrow of Fig. 5 a representes to observe the A-A portion section of the bottom substrate 41 shown in Fig. 5 b and the optical axis direction of amplifying lens 43.And, the semiconductor light-emitting elements 42 the when arrow of Fig. 5 b is represented from top view bottom substrate 41 and the optical axis direction of amplifying lens 43.
In this example, bottom substrate 41 is that a plurality of smooth substrate 41a, 41b, 41c are made up and constitute.The substrate 41b, the 41c that are positioned at the peripheral part of bottom substrate 41 are being provided with towards fly lens 45 obliquely.Amplifying lens 43 constitutes array-like to each substrate 41a, 41b, 41c.The optical axis of semiconductor light-emitting elements 42 and the amplifying lens 43 corresponding with these semiconductor light-emitting elements that is equipped on each substrate 41a, 41b, 41c is disposing towards fly lens 45 shown in Fig. 5 a, Fig. 5 b in parallel with each other.Owing to being made up, a plurality of smooth substrate 41a, 41b, 41c constitute bottom substrate 41; And a plurality of amplifying lenses 43 are constituted array-like to each substrate 41a, 41b, 41c; Therefore easily semiconductor light-emitting elements 42 is mounted to bottom substrate 41, and carries out the adjustment of the optical axis of amplifying lens 43 easily.
In Fig. 2 and Fig. 4, catoptron 50 is being set round light path from a plurality of amplifying lenses 43 to fly lens 45.In Fig. 2 and example shown in Figure 4, bottom substrate 41 and fly lens 45 are quadrilateral, and bottom substrate 41 is greater than fly lens 45, therefore, and the shape after catoptron 50 is top with quadrangular pyramid and cuts.Catoptron 50 will produce and through corresponding amplifying lens 43 and the part of the light after the amplification reflects from the last semiconductor light-emitting elements 42 of substrate 41b, the 41c of the peripheral part that is equipped on bottom substrate 41, and expose to fly lens 45.
At the back side of bottom substrate 41, cooling component 47 is installed.Cooling component 47 has the cooling water path that chilled water is flowed through in inside, come each semiconductor light-emitting elements 42 is cooled off through the chilled water of supplying with to cooling water path from cooling device 48.In addition, cooling component 47 and cooling device 48 are not limited to this, also can adopt the air cooling mode that comprises heat sink and cooling fan (fan).
Below, the exposing light beam formation method of the proximity exposure device of one embodiment of the present invention is described.Fig. 6 is the figure that the exposing light beam formation method to the proximity exposure device of one embodiment of the present invention describes.In the present invention; As shown in Figure 6; The semiconductor light-emitting elements 42 of the peripheral part that is equipped on bottom substrate 41 and the amplifying lens 43 corresponding with these semiconductor light-emitting elements are configured to; Produce and through corresponding amplifying lens 43 and a wherein end of the light after the amplification from this semiconductor light-emitting elements 42, at the predetermined angular α of the shadow surface that does not depart from fly lens 45 with interior and be incident to fly lens 45.And; Catoptron 50 is configured to; Produce and and after the other end of the light after amplifying reflects by this catoptron 50 from the semiconductor light-emitting elements 42 of the peripheral part that is equipped on bottom substrate 41 through corresponding amplifying lens 43, at the predetermined angular α of the shadow surface that does not depart from fly lens 45 with interior and be incident to fly lens 45.
Produce and and in the light after the amplification from the semiconductor light-emitting elements 42 of the peripheral part that is equipped on bottom substrate 41 through corresponding amplifying lens 43; The light of the fly lens 45 of direct irradiation between till a wherein end of outer thoughtful this light of fly lens 45 at the predetermined angular α of the shadow surface that does not depart from fly lens 45 with interior and be incident to fly lens 45, thereby be used in the formation of exposing light beam.And; Produce and and in the light after the amplification from this semiconductor light-emitting elements 42 through corresponding amplifying lens 43; Not the light of the fly lens 45 of direct irradiation between till the other end of outer thoughtful this light of fly lens 45 by catoptron 50 reflections after; At the predetermined angular α of the shadow surface that does not depart from fly lens 45 with interior and be incident to fly lens 45, thereby be used in the formation of exposing light beam.Thereby, produce and through amplifying lens 43 and the light after amplifying when overlapping when utilizing fly lens 45 to make, but efficient utilizes the light of each semiconductor light-emitting elements 42 to form the higher exposing light beam of illumination well from a plurality of semiconductor light-emitting elements 42.
And then; In this embodiment; As shown in Figure 6; The optical axis of the semiconductor light-emitting elements 42 of the most peripheral that is equipped on bottom substrate 41 and the amplifying lens 43 corresponding with these semiconductor light-emitting elements is disposed towards the periphery of fly lens 45, and with catoptron 50 and this optical axis almost parallel disposing.
Fig. 7 be the optical axis of semiconductor light-emitting elements and the amplifying lens corresponding of the expression most peripheral that will be equipped on the bottom substrate with these semiconductor light-emitting elements than the periphery of fly lens more towards the inboard and figure example that disposes.At the optical axis of the semiconductor light-emitting elements 42 of the most peripheral that will be equipped on bottom substrate 41 and the amplifying lens 43 corresponding with these semiconductor light-emitting elements than the periphery of fly lens 45 during more towards inboard and configuration; For make from this semiconductor light-emitting elements 42 produce and through corresponding amplifying lens 43 and a wherein end of the light after amplifying at predetermined angular α with the interior fly lens 45 that is incident to, must prolongation distance till from fly lens 45 to this semiconductor light-emitting elements 42.
In embodiment shown in Figure 6; With the optical axis of the semiconductor light-emitting elements 42 of the most peripheral that is equipped on bottom substrate 41 and the amplifying lens 43 corresponding with these semiconductor light-emitting elements towards the periphery of fly lens 45 and dispose; Therefore compare with example shown in Figure 7, can dwindle for make from this semiconductor light-emitting elements 42 produce and through corresponding amplifying lens 43 and a wherein end of the light after the amplification at predetermined angular α with interior required when being incident to fly lens 45, distance till from fly lens 45 to this semiconductor light-emitting elements 42.
According to embodiment discussed above; Light path till from a plurality of amplifying lenses 43 to fly lens 45 and catoptron 50 is set; The semiconductor light-emitting elements 42 of the peripheral part that is equipped on bottom substrate 41 and the amplifying lens 43 corresponding with these semiconductor light-emitting elements are configured to; From this semiconductor light-emitting elements 42 produce and through corresponding amplifying lens 43 and a wherein end of the light after the amplification at the predetermined angular α of the shadow surface that does not depart from fly lens 45 with interior and be incident to fly lens 45; And catoptron 50 is configured to; Produce and and after the other end of the light after amplifying reflects by this catoptron 50 from the semiconductor light-emitting elements 42 of the peripheral part that is equipped on bottom substrate 41 through corresponding amplifying lens 43; At the predetermined angular α of the shadow surface that does not depart from fly lens 45 with interior and be incident to fly lens 45; Thus, produce and through amplifying lens 43 and the light after amplifying when overlapping can efficient utilize the light of each semiconductor light-emitting elements 42 and form the higher exposing light beam of illumination well utilizing fly lens 45 to make from a plurality of semiconductor light-emitting elements 42.
And then; With the optical axis of the semiconductor light-emitting elements 42 of the most peripheral that is equipped on bottom substrate 41 and the amplifying lens 43 corresponding with these semiconductor light-emitting elements towards the periphery of fly lens 45 and dispose; And with catoptron 50 and this optical axis almost parallel disposing; Thus, can dwindle for make from this semiconductor light-emitting elements 42 produce and through corresponding amplifying lens 43 and a wherein end of the light after the amplification at predetermined angular α with interior required when being incident to fly lens 45, distance till from fly lens 45 to this semiconductor light-emitting elements 42.
And then; According to example shown in Figure 4; A plurality of smooth substrate 41a, 41b, 41c are made up and constitute bottom substrate 41; And a plurality of amplifying lenses are constituted array-like to each this substrate 41a, 41b, 41c, can easily semiconductor light-emitting elements 42 be mounted on the bottom substrate 41 thus, and can easily adjust the optical axis of this amplifying lens 43.
Use proximity exposure device of the present invention to make public, perhaps, the exposing light beam that the exposing light beam formation method of using proximity exposure device of the present invention is formed exposes to substrate via mask; To carry out the exposure of substrate; Thus, the illumination of exposing light beam increases and the time shutter shortening, and; The life-span of the light source of exposing light beam is elongated, therefore can improve the productivity of display panel substrate.
For example, Fig. 8 be the expression LCD device the TFT substrate manufacturing process one the example process flow diagram.Form in the operation (step 101) at film, (Chemical Vapor Deposition, CVD) method etc. form on substrate as the film of liquid crystal drive with the electric conductor film of transparency electrode or insulator film etc. through sputtering method or plasma activated chemical vapour deposition.In resist-coated operation (step 102), wait through roller (roll) formula rubbing method to be coated with photosensitive resin material (photoresist (photoresist)), form photoresist film to form in the operation (step 101) on the formed film at film.In exposure process (step 103), use proximity exposure device or projection aligner to wait pattern transfer with mask to photoresist film.In developing procedure (step 104), through shower type (shower) development method etc., developer solution is supplied on the photoresist film, to remove the not part of photoresist film.In etching (etching) operation (step 105), through wet type (wet) etching, the part of form film in the film that forms in the operation (step 101), not covered by photoresist film is removed.In stripping process (step 106), will in etching work procedure (step 105), accomplish the photoresist film of mask effect and peel off through stripper.Before or after these operations, implement the washing/drying operation of substrate as required.Carry out these operations of several repeatedly, thereby on substrate, form tft array.
And, Fig. 9 be the expression LCD device base plate of color light filter manufacturing process one the example process flow diagram.Form in the operation (step 201) at black matrix" (black matrix), on substrate, form black matrix" through resist-coated, exposure, development, etching, the processing of peeling off etc.Form in the operation (step 202) at colored pattern,, on substrate, form colored pattern through decoration method, pigment dispersing method, print process, electrochemical plating or the like.To the colored pattern of R, G, B, carry out this operation repeatedly.Form in the operation (step 203) at diaphragm, on colored pattern, form diaphragm, form in the operation (step 204), on diaphragm, form ELD at ELD.Before these operations, midway or afterwards, implement the washing/drying operation of substrate as required.
In the manufacturing process of TFT substrate shown in Figure 8; In exposure process (step 103); In the manufacturing process of base plate of color light filter shown in Figure 9; Form in the exposure-processed of operation (step 201) and colored pattern formation operation (step 202) at black matrix", can be suitable for the exposing light beam formation method of proximity exposure device of the present invention or proximity exposure device.
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction; Though the present invention discloses as above with preferred embodiment, yet be not in order to limiting the present invention, anyly be familiar with the professional and technical personnel; In not breaking away from technical scheme scope of the present invention; When the structure of above-mentioned announcement capable of using and technology contents are made a little change or be modified to the equivalent embodiment that is equal to change, but every content that does not break away from technical scheme of the present invention, come any simple modification that above embodiment is done according to technical spirit of the present invention; Be equal to change and modify, all still belong in the scope of technical scheme of the present invention.
Claims (8)
1. proximity exposure device comprises:
A plurality of semiconductor light-emitting elements produce the light that is used to form exposing light beam;
The bottom substrate carries said a plurality of semiconductor light-emitting elements;
A plurality of amplifying lenses are established corresponding to each semiconductor light-emitting elements, will amplify from the light that each semiconductor light-emitting elements produces; And
Fly lens, by through said a plurality of amplifying lenses and the light after amplifying shines,
Utilize said fly lens to make through said a plurality of amplifying lenses and the light after amplifying overlaps and forms said exposing light beam, this proximity exposure device is characterised in that:
The reflecting member that comprises the light path till from said a plurality of amplifying lenses to said fly lens and be provided with,
The semiconductor light-emitting elements and the amplifying lens corresponding with these semiconductor light-emitting elements that are equipped on the peripheral part of said bottom substrate are configured to; From this semiconductor light-emitting elements produce and through the amplifying lens of correspondence and a wherein end of the light after amplifying at the predetermined angular of the shadow surface that does not depart from said fly lens with interior and be incident to said fly lens
Said reflecting member is configured to; From the semiconductor light-emitting elements of the peripheral part that is equipped on said bottom substrate produce and through the amplifying lens of correspondence and the other end of the light after amplifying by this reflecting member after reflecting, be incident to said fly lens at the predetermined angular of the shadow surface that does not depart from said fly lens with interior.
2. proximity exposure device according to claim 1 is characterized in that:
Semiconductor light-emitting elements and the amplifying lens corresponding with these semiconductor light-emitting elements that is equipped on the most peripheral of said bottom substrate makes optical axis towards the periphery of said fly lens and dispose,
Said reflecting member be with this optical axis almost parallel disposing.
3. proximity exposure device according to claim 1 and 2 is characterized in that:
Said bottom substrate is that a plurality of smooth substrates are made up and constitute, and said a plurality of amplifying lenses constitute array-like to each this substrate.
4. the exposing light beam formation method of a proximity exposure device,
A plurality of semiconductor light-emitting elements are equipped on the bottom substrate, produce the light that is used to form exposing light beam from each semiconductor light-emitting elements,
Corresponding to each semiconductor light-emitting elements a plurality of amplifying lenses are set, after the amplifying lens of the light that will produce from each semiconductor light-emitting elements through correspondence amplifies, expose to fly lens,
Utilize fly lens to make through a plurality of amplifying lenses and the light after amplifying overlaps and forms exposing light beam, this exposing light beam formation method is characterised in that:
Light path till from a plurality of amplifying lenses to fly lens and reflecting member is set,
The semiconductor light-emitting elements of the peripheral part that is equipped on the bottom substrate and the amplifying lens corresponding with these semiconductor light-emitting elements are configured to; From this semiconductor light-emitting elements produce and through the amplifying lens of correspondence and a wherein end of the light after amplifying at the predetermined angular of the shadow surface that does not depart from fly lens with interior and be incident to fly lens
Reflecting member is configured to; From the semiconductor light-emitting elements of the peripheral part that is equipped on the bottom substrate produce and through the amplifying lens of correspondence and the other end of the light after amplifying by this reflecting member after reflecting, at the predetermined angular of the shadow surface that does not depart from fly lens with the interior fly lens that is incident to.
5. the exposing light beam formation method of proximity exposure device according to claim 4 is characterized in that:
With the optical axis of the semiconductor light-emitting elements of the most peripheral that is equipped on the bottom substrate and the amplifying lens corresponding with these semiconductor light-emitting elements towards the periphery of fly lens and dispose,
With reflecting member and this optical axis almost parallel disposing.
6. according to the exposing light beam formation method of claim 4 or 5 described proximity exposure devices, it is characterized in that:
A plurality of smooth substrates are made up and constitute the bottom substrate, with a plurality of amplifying lenses to each this substrate and constitute array-like.
7. the manufacturing approach of a display panel substrate is characterized in that:
Each described proximity exposure device carries out the exposure of substrate in the use claim 1 to 3.
8. the manufacturing approach of a display panel substrate is characterized in that:
With the exposing light beam formation method of using each described proximity exposure device in the claim 4 to 6, and the exposing light beam that forms exposes to substrate via mask, to carry out the exposure of substrate.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009160727A JP5355261B2 (en) | 2009-07-07 | 2009-07-07 | Proximity exposure apparatus, exposure light forming method for proximity exposure apparatus, and display panel substrate manufacturing method |
| JP2009-160727 | 2009-07-07 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101943867A CN101943867A (en) | 2011-01-12 |
| CN101943867B true CN101943867B (en) | 2012-11-07 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2010102153535A Expired - Fee Related CN101943867B (en) | 2009-07-07 | 2010-06-25 | Adjacent exposure device, forming method of exposure beam and manufacturing method of panel substrate |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5355261B2 (en) |
| KR (1) | KR101133371B1 (en) |
| CN (1) | CN101943867B (en) |
| TW (1) | TWI414903B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2013171088A (en) * | 2012-02-17 | 2013-09-02 | Hitachi High-Technologies Corp | Proximity exposure apparatus, method for forming exposure light of proximity exposure apparatus, and method for manufacturing display panel substrate |
| KR101649129B1 (en) * | 2015-08-21 | 2016-08-18 | (주)블루코어 | UV LED light source module unit for exposure photolithography process and exposure photolithography apparatus used the same |
| DE102017217345B4 (en) | 2017-09-28 | 2019-12-24 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Optical beam former |
| CN110196517B (en) * | 2019-05-16 | 2021-09-03 | Tcl华星光电技术有限公司 | Ultraviolet irradiation machine |
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| JP2008070769A (en) * | 2006-09-15 | 2008-03-27 | Ricoh Co Ltd | Light source unit, illumination device and projector device |
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- 2010-06-25 CN CN2010102153535A patent/CN101943867B/en not_active Expired - Fee Related
- 2010-06-28 TW TW099121055A patent/TWI414903B/en not_active IP Right Cessation
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Also Published As
| Publication number | Publication date |
|---|---|
| TWI414903B (en) | 2013-11-11 |
| JP5355261B2 (en) | 2013-11-27 |
| KR101133371B1 (en) | 2012-04-06 |
| JP2011017770A (en) | 2011-01-27 |
| CN101943867A (en) | 2011-01-12 |
| KR20110004276A (en) | 2011-01-13 |
| TW201102767A (en) | 2011-01-16 |
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