JP5345443B2 - Exposure apparatus, exposure light irradiation method, and display panel substrate manufacturing method - Google Patents

Description

  The present invention relates to an exposure apparatus using a plurality of semiconductor light emitting elements as a light source for generating exposure light, an exposure light irradiation method, and a display panel substrate using the same in the manufacture of a display panel substrate such as a liquid crystal display device. It relates to a manufacturing method.

  Manufacturing of TFT (Thin Film Transistor) substrates, color filter substrates, plasma display panel substrates, organic EL (Electroluminescence) display panel substrates, and the like of liquid crystal display devices used as display panels is performed using photolithography using an exposure apparatus. This is performed by forming a pattern on the substrate by a technique. As an exposure apparatus, a projection method in which a mask pattern is projected onto a substrate using a lens or a mirror, and a minute gap (proximity gap) is provided between the mask and the substrate to transfer the mask pattern to the substrate. There is a proximity method. The proximity method is inferior in pattern resolution performance to the projection method, but the configuration of the irradiation optical system is simple, the processing capability is high, and it is suitable for mass production.

  Conventionally, a lamp in which high pressure gas is enclosed in a bulb, such as a mercury lamp, a halogen lamp, or a xenon lamp, has been used as a light source for generating exposure light of a proximity exposure apparatus. These lamps have a short life and must be replaced after a predetermined usage time. For example, if the lamp has a lifetime of 750 hours and it is lit continuously, it needs to be replaced about once a month. When the lamp is replaced, the exposure process is interrupted, resulting in a decrease in productivity.

  On the other hand, Patent Document 1 discloses a technique of using a solid light source element such as a light emitting diode as a light source of exposure light in a projection type exposure apparatus. Semiconductor light-emitting elements such as light-emitting diodes have a lifetime of several thousand hours, which is longer than that of a lamp, and exposure processing is not interrupted. Therefore, improvement in productivity is expected.

JP 2006-332077 A

  In recent years, as the size of the substrate is increased with the increase in the screen size of the display panel, a light source with higher illuminance has been required for the exposure light source. When a semiconductor light emitting element as described in Patent Document 1 is used as a light source that generates exposure light of a proximity exposure apparatus, the output of the semiconductor light emitting element is much smaller than that of a conventional lamp, and therefore, several hundred to several thousand. About several semiconductor light emitting elements must be used side by side. In that case, in order to suppress a decrease in output due to heat generation of each semiconductor light emitting element, it is necessary to efficiently cool a large number of semiconductor light emitting elements.

  In the case of mercury lamps that are most often used in proximity exposure apparatuses, g-line (436 nm), h-line (405 nm), i-line (365 nm), etc. in the mercury spectrum are used as exposure light. However, each spectrum has a problem that the deterioration characteristic varies depending on the usage time of the mercury lamp, and the wavelength characteristic of the exposure light changes according to the usage time of the mercury lamp.

  An object of the present invention is to efficiently cool a plurality of semiconductor light emitting devices when forming exposure light using the plurality of semiconductor light emitting devices. Another object of the present invention is to stabilize the wavelength characteristics of exposure light. Furthermore, the subject of this invention is improving the productivity of the panel substrate for a display.

  An exposure apparatus according to the present invention includes a plurality of semiconductor light emitting elements that generate light forming exposure light, a plurality of first optical components that expand light generated by the plurality of semiconductor light emitting elements, and a plurality of first optical elements. A second optical component that condenses light expanded by the component to form exposure light; a control unit that controls driving of the plurality of semiconductor light emitting elements; and a cooling unit that cools the plurality of semiconductor light emitting elements. The control means changes the number of semiconductor light emitting elements to be turned on among the plurality of semiconductor light emitting elements, adjusts the illuminance of the exposure light, and changes the semiconductor light emitting elements to be turned off with the passage of time. is there.

  Further, the exposure light irradiation method of the present invention generates light for forming exposure light from a plurality of semiconductor light emitting elements, expands and collects the light generated from the plurality of semiconductor light emitting elements to form exposure light, While cooling a plurality of semiconductor light emitting elements, the number of semiconductor light emitting elements to be turned on is changed, the illuminance of exposure light is adjusted, and the semiconductor light emitting elements that are turned off with time elapse. To change.

  While cooling a plurality of semiconductor light emitting elements, the number of semiconductor light emitting elements to be turned on is changed, the illuminance of exposure light is adjusted, and the semiconductor light emitting elements to be turned off with time are changed. Therefore, lighting and extinguishing of each semiconductor light emitting element are repeated with time while the illuminance of the exposure light is kept constant. Accordingly, the temperature of the semiconductor light emitting element that has risen during lighting is lowered by the cooling means while it is turned off, so that the semiconductor light emitting element is efficiently cooled.

  Alternatively, the exposure apparatus of the present invention includes a plurality of semiconductor light emitting elements that generate light forming exposure light, a plurality of first optical components that expand light generated by the plurality of semiconductor light emitting elements, and a plurality of first elements. A second optical component that condenses light expanded by the optical component to form exposure light, a control unit that controls driving of the plurality of semiconductor light emitting devices, and a cooling unit that cools the plurality of semiconductor light emitting devices. The control means intermittently lights a part or all of the plurality of semiconductor light emitting elements, adjusts the illuminance of exposure light, and intermittently turns on a part of the semiconductor light emitting elements that are intermittently lit It is turned on at a different timing from the semiconductor light emitting element to be turned on.

  Further, the exposure light irradiation method of the present invention generates light for forming exposure light from a plurality of semiconductor light emitting elements, expands and collects the light generated from the plurality of semiconductor light emitting elements to form exposure light, While cooling a plurality of semiconductor light emitting elements, part or all of the plurality of semiconductor light emitting elements are lit intermittently, the illuminance of the exposure light is adjusted, and some of the semiconductor light emitting elements that are intermittently lit The semiconductor light-emitting element that is intermittently lit is lit at a different timing.

  While cooling a plurality of semiconductor light emitting elements, some or all of the plurality of semiconductor light emitting elements are lit intermittently to adjust the illuminance of the exposure light. Compared with the case of lighting, the temperature is lowered by the cooling means, and the cooling is performed efficiently. Since some of the semiconductor light-emitting elements that are intermittently lit are lit at different timings from the other semiconductor light-emitting elements that are intermittently lit, the illuminance of the exposure light does not change abruptly.

  Further, in the exposure apparatus of the present invention, the control means turns on the semiconductor light emitting element that is intermittently turned on with an output larger than the maximum rated output. Moreover, the exposure light irradiation method of this invention lights a semiconductor light emitting element intermittently with an output larger than a maximum rated output. The maximum rated output of a semiconductor light emitting device is the maximum output that can maintain a specified output degradation range for a specified time when the semiconductor light emitting device is lit continuously under a specified cooling condition. In the case of intermittent lighting, an output of about 1.5 to 2 times the maximum rated output is possible by strengthening the cooling conditions. Since the semiconductor light emitting element is intermittently turned on with an output larger than the maximum rated output, the illuminance of the exposure light is increased and the exposure time is shortened.

  The exposure apparatus of the present invention includes a plurality of semiconductor light emitting elements that generate light forming exposure light, a plurality of first optical components that expand light generated by the plurality of semiconductor light emitting elements, and a plurality of first elements. A second optical component that condenses light expanded by the optical component to form exposure light, and a control unit that controls driving of the plurality of semiconductor light emitting devices, wherein the plurality of semiconductor light emitting devices have different wavelengths. A plurality of different types of semiconductor light emitting elements that generate characteristic light are included, and the control means selects the type of semiconductor light emitting element to be lit according to the photosensitive resin material to be exposed.

  Also, the exposure light irradiation method of the present invention is provided with a plurality of different types of semiconductor light emitting elements that generate light of different wavelength characteristics, and selects the type of semiconductor light emitting element to be lit according to the photosensitive resin material to be exposed, Light for forming exposure light is generated from a plurality of selected types of semiconductor light emitting elements, and light generated from a plurality of selected types of semiconductor light emitting elements is enlarged and condensed to form exposure light.

  A plurality of different types of semiconductor light emitting elements that generate light of different wavelength characteristics are provided, and the type of semiconductor light emitting element to be lit is selected according to the photosensitive resin material to be exposed. Therefore, the exposure of the wavelength characteristics according to the photosensitive resin material Light is formed. And the wavelength characteristic of exposure light does not change according to use time like the conventional mercury lamp.

  The method for producing a display panel substrate according to the present invention comprises exposing the substrate using any one of the above exposure apparatuses, or exposing the exposure light through a mask using any one of the above exposure light irradiation methods. To expose the substrate. Since the life of the exposure light source is prolonged, the productivity of the display panel substrate is improved.

  According to the exposure apparatus and the exposure light irradiation method of the present invention, light for forming exposure light is generated from a plurality of semiconductor light emitting elements, and the light generated from the plurality of semiconductor light emitting elements is enlarged and condensed to collect the exposure light. Forming and cooling a plurality of semiconductor light emitting elements, changing the number of semiconductor light emitting elements to be lit, adjusting the illuminance of exposure light, By changing with progress, when forming exposure light using a plurality of semiconductor light emitting elements, the plurality of semiconductor light emitting elements can be efficiently cooled.

  Alternatively, according to the exposure apparatus and the exposure light irradiation method of the present invention, while cooling the plurality of semiconductor light emitting elements, a part or all of the plurality of semiconductor light emitting elements are intermittently turned on to adjust the illuminance of the exposure light. When forming exposure light using a plurality of semiconductor light emitting elements by lighting a part of the semiconductor light emitting elements that are intermittently lit at a timing different from that of other semiconductor light emitting elements that are intermittently lit. The semiconductor light emitting device can be efficiently cooled.

  Furthermore, since the illuminance of the exposure light can be increased by intermittently lighting the semiconductor light emitting element with an output larger than the maximum rated output, the exposure time can be shortened.

  In addition, according to the exposure apparatus and the exposure light irradiation method of the present invention, a plurality of different types of semiconductor light emitting elements that generate light of different wavelength characteristics are provided, and the semiconductor light emitting elements that are turned on according to the photosensitive resin material to be exposed. By selecting the type, it is possible to form exposure light having a wavelength characteristic corresponding to the photosensitive resin material, and to stabilize the wavelength characteristic of the exposure light.

  According to the method for manufacturing a display panel substrate of the present invention, the life of the light source of the exposure light is prolonged, so that the productivity of the display panel substrate can be improved.

1 is a diagram showing a schematic configuration of an exposure apparatus according to an embodiment of the present invention. It is a figure which shows an example of a light source unit. It is a figure which shows an example of a light source unit. It is a figure which shows an example of a light source unit. It is the figure which looked at the semiconductor light-emitting device and the magnifying lens from the front. It is a figure explaining the exposure light irradiation method by one embodiment of this invention. It is a figure explaining the exposure light irradiation method by other embodiment of this invention. It is a figure explaining the exposure light irradiation method by further another embodiment of this invention. It is a figure explaining the case where the exposure light irradiation method shown in FIG. 8 is applied to a negative photosensitive resin material. It is a figure explaining the exposure light irradiation method by further another embodiment of this invention. It is a flowchart which shows an example of the manufacturing process of the TFT substrate of a liquid crystal display device. It is a flowchart which shows an example of the manufacturing process of the color filter board | substrate of a liquid crystal display device.

  FIG. 1 is a view showing the schematic arrangement of an exposure apparatus according to an embodiment of the present invention. This embodiment shows an example of a proximity exposure apparatus that exposes a substrate using a proximity method. The proximity exposure apparatus includes a base 3, an X guide 4, an X stage 5, a Y guide 6, a Y stage 7, a θ stage 8, a chuck support 9, a chuck 10, a mask holder 20, and an exposure light irradiation device 30. It is configured. In addition to these, the proximity exposure apparatus includes a substrate transfer robot that loads the substrate 1 into the chuck 10 and unloads the substrate 1 from the chuck 10, a temperature control unit that performs temperature management in the apparatus, and the like.

  Note that the XY directions in the embodiments described below are examples, and the X direction and the Y direction may be interchanged.

  In FIG. 1, the chuck 10 is at an exposure position where the substrate 1 is exposed. A mask holder 20 for holding the mask 2 is installed above the exposure position. The mask holder 20 holds the periphery of the mask 2 by vacuum suction. An exposure light irradiation device 30 is disposed above the mask 2 held by the mask holder 20. At the time of exposure, exposure light from the exposure light irradiation device 30 passes through the mask 2 and is irradiated onto the substrate 1, whereby the pattern of the mask 2 is transferred to the surface of the substrate 1 and a pattern is formed on the substrate 1. .

  The chuck 10 is moved to a load / unload position away from the exposure position by the X stage 5. At the load / unload position, the substrate 1 is carried into the chuck 10 and the substrate 1 is carried out of the chuck 10 by a substrate transfer robot (not shown). The loading of the substrate 1 onto the chuck 10 and the unloading of the substrate 1 from the chuck 10 are performed using a plurality of push-up pins provided on the chuck 10. The push-up pin is housed inside the chuck 10 and is lifted from the inside of the chuck 10 to receive the substrate 1 from the substrate transfer robot and unload the substrate 1 from the chuck 10 when loading the substrate 1 onto the chuck 10. In doing so, the substrate 1 is delivered to the substrate transfer robot.

  The chuck 10 is mounted on the θ stage 8 via the chuck support 9, and a Y stage 7 and an X stage 5 are provided below the θ stage 8. The X stage 5 is mounted on an X guide 4 provided on the base 3 and moves along the X guide 4 in the X direction (the horizontal direction in FIG. 1). The Y stage 7 is mounted on a Y guide 6 provided on the X stage 5 and moves along the Y guide 6 in the Y direction (the depth direction in FIG. 1). The θ stage 8 is mounted on the Y stage 7 and rotates in the θ direction. The chuck support 9 is mounted on the θ stage 8 and supports the chuck 10 at a plurality of locations.

  The chuck 10 is moved between the load / unload position and the exposure position by the movement of the X stage 5 in the X direction and the movement of the Y stage 7 in the Y direction. At the load / unload position, the substrate 1 mounted on the chuck 10 is pre-aligned by moving the X stage 5 in the X direction, moving the Y stage 7 in the Y direction, and rotating the θ stage 8 in the θ direction. Is done. At the exposure position, the X stage 5 is moved in the X direction and the Y stage 7 is moved in the Y direction, whereby the substrate 1 mounted on the chuck 10 is stepped in the XY direction. Then, the substrate 1 is aligned by the movement of the X stage 5 in the X direction, the movement of the Y stage 7 in the Y direction, and the rotation of the θ stage 8 in the θ direction. Further, the gap between the mask 2 and the substrate 1 is adjusted by moving and tilting the mask holder 20 in the Z direction (the vertical direction in FIG. 1) by a Z-tilt mechanism (not shown).

  In the present embodiment, the gap between the mask 2 and the substrate 1 is adjusted by moving and tilting the mask holder 20 in the Z direction. However, the chuck support base 9 is provided with a Z-tilt mechanism, The gap between the mask 2 and the substrate 1 may be adjusted by moving and tilting the chuck 10 in the Z direction.

  The exposure light irradiation device 30 includes a shutter 31, a collimation lens group 32, a plane mirror 33, a shutter driving device 34, an illuminance sensor 35, and a light source unit 40. A light source unit 40 described later generates exposure light for exposing the substrate 1. The shutter driving device 34 opens the shutter 31 when the substrate 1 is exposed, and closes the shutter 31 when the substrate 1 is not exposed. When the shutter 31 is open, the exposure light generated from the light source unit 40 passes through the collimation lens group 32 to become a parallel light beam, is reflected by the plane mirror 33, and is applied to the mask 2. The pattern of the mask 2 is transferred to the substrate 1 by the exposure light applied to the mask 2, and the substrate 1 is exposed. When the shutter 31 is closed, the exposure light generated from the light source unit 40 is blocked by the shutter 31 and the substrate 1 is not exposed.

  An illuminance sensor 35 is disposed in the vicinity of the back side of the plane mirror 33. The plane mirror 33 is provided with a small opening that allows a part of the exposure light to pass therethrough. The illuminance sensor 35 receives the light that has passed through the opening of the plane mirror 33 and measures the illuminance of the exposure light. The measurement result of the illuminance sensor 35 is input to the light source unit 40.

  2-4 is a figure which shows an example of a light source unit. The light source unit 40 includes a base substrate 41, a semiconductor light emitting element 42, a magnifying lens 43, a condenser lens 44, a lens group 45, a control circuit 46, a cooling member 47, and a cooling device 48. A plurality of semiconductor light emitting elements 42 are mounted on the base substrate 41. The base substrate 41 drives each semiconductor light emitting element 42 under the control of the control circuit 46. Each semiconductor light emitting element 42 is formed of a light emitting diode, a laser diode, or the like, and generates light that forms exposure light. The control circuit 46 controls driving of each semiconductor light emitting element 42 based on the measurement result of the illuminance sensor 35.

  In FIG. 2 to FIG. 4, 13 semiconductor light emitting elements 42 are shown, but several hundred to several thousand semiconductor light emitting elements are used in an actual light source unit.

  A magnifying lens 43 is provided corresponding to each semiconductor light emitting element 42, and each magnifying lens 43 magnifies the light generated from each semiconductor light emitting element 42 and irradiates the condensing lens 44. The condenser lens 44 condenses the light enlarged by the magnifying lens 43 and irradiates the lens group 45. The lens group 45 includes a fly-eye lens or a rod lens, and uniformizes the illuminance distribution of the light collected by the condenser lens 44.

  In the example shown in FIG. 2, the base substrate 41 is configured in a spherical shape. Then, each semiconductor light emitting element 42 is placed on the spherical base substrate 41 so that the light generated from each semiconductor light emitting element 42 is irradiated to the lens group 45 through each magnifying lens 43 and condenser lens 44. Has been placed.

  In the example shown in FIGS. 3 and 4, the base substrate 41 is divided into a plurality of pieces, and a plurality of semiconductor light emitting elements 42 are arranged in a plane on each base substrate 41. Each base substrate 41 is different so that light generated from a plurality of semiconductor light emitting elements 42 mounted on each base substrate 41 is irradiated to the lens group 45 via each magnifying lens 43 and condenser lens 44. Are arranged at different angles. By arranging each semiconductor light emitting element 42 on each base substrate 41 in a plane, the position of each semiconductor light emitting element 42 can be easily adjusted.

  2 to 4, a cooling member 47 is attached to the back surface of the base substrate 41. The cooling member 47 has a cooling water passage through which the cooling water flows, and cools each semiconductor light emitting element 42 by the cooling water supplied from the cooling device 48 to the cooling water passage. The cooling member 47 and the cooling device 48 are not limited to this, and may be an air cooling type including a heat radiating plate and a cooling fan.

  In the example shown in FIG. 2, the cooling member 47 is configured in a spherical shape in accordance with the spherical shape of the base substrate 41. In the example shown in FIG. 3, the cooling member 47 is configured in a shape that matches the arrangement of the base substrates 41. Moreover, in the example shown in FIG. 4, the cooling member 47 is divided | segmented into plurality, and each cooling member 47 is comprised by plate shape. And each cooling member 47 is attached to the back surface of the several base substrate 41 via the heat conductive member 47a.

  FIG. 5 is a front view of the semiconductor light emitting element and the magnifying lens. It is desirable that the magnifying lens 43 be arranged with as little gap as possible so that many magnifying lenses 43 can be arranged in the same space. Further, in the present embodiment, the semiconductor light emitting element 42 is configured as a regular hexagon, but the shape of the semiconductor light emitting element 42 is not limited to this, and may be configured as a polygon or a circle having more corners. The closer the shape of the semiconductor light emitting element 42 is to the shape of the magnifying lens 43, the more effectively the light receiving surface of the magnifying lens 43 can be used.

  Hereinafter, an exposure light irradiation method according to an embodiment of the present invention will be described. FIG. 6 is a diagram for explaining an exposure light irradiation method according to an embodiment of the present invention. In the present embodiment, the control circuit 46 changes the number of semiconductor light emitting elements 42 to be turned on among the plurality of semiconductor light emitting elements 42, adjusts the illuminance of the exposure light, and turns off the semiconductor light emitting elements 42 to be turned off. It changes with the progress of.

  In FIG. 6, the control circuit 46 changes the number of semiconductor light emitting elements to be turned on to two-thirds of the plurality of semiconductor light emitting elements 42, and turns on all the semiconductor light emitting elements 42 with the illuminance of exposure light. The case of adjusting to 2/3 of the time is shown. In this case, the control circuit 46 divides each semiconductor light emitting element 42 into three groups denoted by reference signs A, B, and C in FIG. FIG. 6A shows the on / off state of the group of semiconductor light emitting elements 42 labeled A in FIG. 5, and FIG. 6B shows the group of semiconductor light emitting elements 42 labeled B in FIG. FIG. 6C shows the on / off state of the group of semiconductor light emitting elements 42 denoted by C in FIG. As shown in FIGS. 6A, 6B, and 6C, the control circuit 46 keeps the illuminance of the exposure light constant while changing the semiconductor light emitting element to be turned off over time.

  While cooling the plurality of semiconductor light emitting elements 42, the number of semiconductor light emitting elements to be lit is changed, the illuminance of exposure light is adjusted, and the semiconductor light emitting elements to be turned off are changed over time. Therefore, the semiconductor light emitting elements 42 are repeatedly turned on and off over time while the illuminance of the exposure light is kept constant. Therefore, the temperature of the semiconductor light emitting element 42 that has risen while the light is on is lowered by the cooling member 47 while the light is off, and the semiconductor light emitting element 42 is efficiently cooled.

  FIG. 7 is a diagram for explaining an exposure light irradiation method according to another embodiment of the present invention. In the present embodiment, the control circuit 46 intermittently lights some or all of the plurality of semiconductor light emitting elements 42, adjusts the illuminance of the exposure light, and partially turns on the semiconductor light emitting elements that are turned on. The light is turned on at a different timing from other semiconductor light emitting elements that are lighted intermittently. In this case, to adjust the illuminance of the exposure light, there are a method of changing the number of semiconductor light emitting elements that are intermittently turned on and a method of changing the lighting time of the semiconductor light emitting element that is turned on intermittently.

In FIG. 7, the control circuit 46 changes the lighting time of the semiconductor light emitting element that is intermittently turned on, adjusts the illuminance of the exposure light, and half of the semiconductor light emitting element that is turned on intermittently A case where the light is turned on at a timing different from that of the semiconductor light emitting element to be turned on is shown. In this case, the control circuit 46 divides each semiconductor light emitting element 42 into two groups. FIG. 7A shows the lighting / light-off state of the semiconductor light emitting elements 42 of each group when the lighting time and the light-off time are the same . FIG. 7B shows the lighting time when the lighting time is longer than the light-off time. The lighting / extinguishing states of the semiconductor light emitting elements 42 of each group are shown. As shown in FIGS. 7A and 7B , the control circuit 46 turns on half of the semiconductor light emitting elements 42 to be intermittently turned on at a timing different from that of the remaining half of the semiconductor light emitting elements 42 to be turned on. Let

  While cooling the plurality of semiconductor light emitting elements 42, part or all of the plurality of semiconductor light emitting elements 42 are intermittently turned on to adjust the illuminance of the exposure light. As compared with the case where the light is turned on, the temperature is lowered by the cooling member 47, and the cooling is performed efficiently. Since some of the semiconductor light-emitting elements that are intermittently lit are lit at different timings from the other semiconductor light-emitting elements that are intermittently lit, the illuminance of the exposure light does not change abruptly.

  FIG. 8 is a diagram for explaining an exposure light irradiation method according to still another embodiment of the present invention. In the present embodiment, the control circuit 46 lights the semiconductor light emitting element 42 that is intermittently turned on with an output larger than the maximum rated output. The maximum rated output of a semiconductor light emitting device is the maximum output that can maintain a specified output degradation range for a specified time when the semiconductor light emitting device is lit continuously under a specified cooling condition. In the case of intermittent lighting, an output of about 1.5 to 2 times the maximum rated output is possible by strengthening the cooling conditions.

  FIG. 8A is a diagram showing the output of the semiconductor light emitting device 42 when the semiconductor light emitting device 42 is continuously lit at the maximum rated output, and FIG. 8B is a temperature change of the semiconductor light emitting device 42 in this case. FIG. When the semiconductor light emitting element 42 is continuously lit at the maximum rated output, the time required for exposure is t. In this case, the cooling condition of the semiconductor light emitting element 42 is set so that the temperature of the semiconductor light emitting element 42 does not exceed the specified temperature Tc at time t.

  FIG. 8C is a diagram illustrating the output of the semiconductor light emitting element 42 when the semiconductor light emitting element 42 is intermittently lit at twice the maximum rated output, and FIG. 8D is the semiconductor light emitting element 42 in this case. It is a figure which shows the temperature change of. When the semiconductor light emitting element 42 is intermittently lit at twice the maximum rated output, the exposure light illuminance is doubled, so that the time required for exposure is halved. In the example in which the light-on time and the light-off time of the semiconductor light emitting element 42 that is intermittently turned on are the same, as shown in FIG. 8B, the exposure ends earlier by t / 4 as compared with FIG. 8A. In this example, the cooling conditions for the semiconductor light emitting element 42 are set so that the temperature of the semiconductor light emitting element 42 does not exceed the specified temperature Tc at time t / 4.

  FIG. 9 is a diagram for explaining a case where the exposure light irradiation method shown in FIG. 8 is applied to a negative photosensitive resin material. In the negative type photosensitive resin material, as shown in FIG. 9A, exposure is performed with an illuminance Ip higher than the illuminance Ic as compared with an exposure amount Jc (energy of exposure light) necessary for exposure with the illuminance Ic. Sometimes the required exposure amount Jp (exposure light energy) becomes small. Therefore, when the semiconductor light emitting element 42 is lit intermittently at twice the maximum rated output, for example, the required exposure amount (exposure light energy) is half that required when the semiconductor light emitting element 42 is lit at the maximum rated output. Then, as shown in FIG. 9 (b), the time required for exposure is further half that of FIG. 8 (b). Accordingly, in the example shown in FIG. 9B, the exposure ends earlier by t / 2 than in FIG. 8A.

  FIG. 10 is a diagram for explaining an exposure light irradiation method according to still another embodiment of the present invention. In the present embodiment, a plurality of semiconductor light-emitting elements 42 each include a plurality of different types of semiconductor light-emitting elements that generate light of different wavelength characteristics, and a semiconductor that the control circuit 46 turns on according to the photosensitive resin material to be exposed. The type of the light emitting element is selected. In FIG. 10, the plurality of semiconductor light emitting elements 42 are classified into three types assigned with symbols G, H, and I. The semiconductor light emitting element 42 with the symbol G generates light having a wavelength characteristic close to the g-line (436 nm) of the mercury spectrum. The semiconductor light emitting element 42 with the symbol H generates light having a wavelength characteristic close to the h line (405 nm) of the mercury spectrum. The semiconductor light emitting element 42 denoted by reference symbol I generates light having a wavelength characteristic close to i-line (365 nm) of the mercury spectrum. The control circuit 46 selects one type or two or more types of semiconductor light emitting elements to be turned on according to the photosensitive resin material to be exposed. In this case, as the illuminance sensor 35 shown in FIG. 1, three illuminance sensors for separately measuring the illuminance of the g-line, h-line, and i-line are arranged, and the measurement results of each illuminance sensor are output to the control circuit 46. To do. Based on the measurement result of each illuminance sensor, the control circuit 46 controls the output of the semiconductor light emitting element to be lit to adjust the illuminance of the g-line, h-line, and i-line to desired values.

  A plurality of different types of semiconductor light emitting elements that generate light of different wavelength characteristics are provided, the type of semiconductor light emitting element to be lit is selected according to the photosensitive resin material to be exposed, and the output of the semiconductor light emitting element to be lit is controlled. Therefore, exposure light having a wavelength characteristic corresponding to the photosensitive resin material is formed. And the wavelength characteristic of exposure light does not change according to use time like the conventional mercury lamp.

  According to the embodiment described above, light for forming exposure light is generated from the plurality of semiconductor light emitting elements 42, and the light generated from the plurality of semiconductor light emitting elements 42 is enlarged and condensed to form exposure light. While cooling the plurality of semiconductor light emitting elements 42, the number of semiconductor light emitting elements to be turned on among the plurality of semiconductor light emitting elements 42 is changed, the illuminance of exposure light is adjusted, and the semiconductor light emitting elements to be turned off are changed over time. By changing with the passage of time, the plurality of semiconductor light emitting elements 42 can be efficiently cooled when the exposure light is formed using the plurality of semiconductor light emitting elements 42.

  Alternatively, one or more of the plurality of semiconductor light emitting elements 42 are intermittently turned on while cooling the plurality of semiconductor light emitting elements 42 to adjust the illuminance of the exposure light and intermittently turn on. When the exposure light is formed using the plurality of semiconductor light emitting elements 42, the plurality of semiconductor light emitting elements 42 are efficiently cooled by lighting the portion at a timing different from that of other semiconductor light emitting elements that are intermittently turned on. Can do.

  Further, the illumination time of the exposure light can be increased by intermittently lighting the semiconductor light emitting element 42 with an output larger than the maximum rated output, so that the exposure time can be shortened.

  Also, by providing a plurality of different types of semiconductor light emitting elements that generate light of different wavelength characteristics, and selecting the type of semiconductor light emitting element to be lit according to the photosensitive resin material to be exposed, the wavelength according to the photosensitive resin material The exposure light having the characteristics can be formed, and the wavelength characteristics of the exposure light can be stabilized.

  The present invention can be applied not only to a proximity exposure apparatus but also to a projection exposure apparatus that exposes a substrate using a projection method.

  The exposure light source is exposed by exposing the substrate by using the exposure apparatus of the present invention or by irradiating the substrate with exposure light through a mask using the exposure light irradiation method of the present invention. Thus, the productivity of the display panel substrate can be improved.

  For example, FIG. 11 is a flowchart showing an example of the manufacturing process of the TFT substrate of the liquid crystal display device. In the thin film formation step (step 101), a thin film such as a conductor film or an insulator film, which becomes a transparent electrode for driving liquid crystal, is formed on the substrate by sputtering, plasma chemical vapor deposition (CVD), or the like. In the resist coating process (step 102), a photosensitive resin material (photoresist) is applied by a roll coating method or the like to form a photoresist film on the thin film formed in the thin film forming process (step 101). In the exposure step (step 103), the mask pattern is transferred to the photoresist film using a proximity exposure apparatus, a projection exposure apparatus, or the like. In the development step (step 104), a developer is supplied onto the photoresist film by a shower development method or the like to remove unnecessary portions of the photoresist film. In the etching process (step 105), a portion of the thin film formed in the thin film formation process (step 101) that is not masked by the photoresist film is removed by wet etching. In the stripping step (step 106), the photoresist film that has finished the role of the mask in the etching step (step 105) is stripped with a stripping solution. Before or after each of these steps, a substrate cleaning / drying step is performed as necessary. These steps are repeated several times to form a TFT array on the substrate.

  FIG. 12 is a flowchart showing an example of the manufacturing process of the color filter substrate of the liquid crystal display device. In the black matrix forming step (step 201), a black matrix is formed on the substrate by processing such as resist coating, exposure, development, etching, and peeling. In the colored pattern forming step (step 202), a colored pattern is formed on the substrate by a dyeing method, a pigment dispersion method, a printing method, an electrodeposition method, or the like. This process is repeated for the R, G, and B coloring patterns. In the protective film forming step (step 203), a protective film is formed on the colored pattern, and in the transparent electrode film forming step (step 204), a transparent electrode film is formed on the protective film. Before, during or after each of these steps, a substrate cleaning / drying step is performed as necessary.

  In the TFT substrate manufacturing process shown in FIG. 11, in the exposure process (step 103), in the color filter substrate manufacturing process shown in FIG. 12, in the black matrix forming process (step 201) and the colored pattern forming process (step 202). In this exposure process, the exposure apparatus or exposure light irradiation method of the present invention can be applied.

DESCRIPTION OF SYMBOLS 1 Substrate 2 Mask 3 Base 4 X guide 5 X stage 6 Y guide 7 Y stage 8 θ stage 9 Chuck support 10 Chuck 20 Mask holder 30 Exposure light irradiation device 31 Shutter 32 Collimation lens group 33 Plane mirror 34 Shutter drive device 35 Illuminance sensor DESCRIPTION OF SYMBOLS 40 Light source unit 41 Base substrate 42 Semiconductor light emitting element 43 Magnifying lens 44 Condensing lens 45 Lens group 46 Control circuit 47 Cooling member 47a Thermal conduction member 48 Cooling device

Claims (4)

A plurality of semiconductor light emitting elements that generate light that forms exposure light; and
A plurality of first optical components for enlarging light generated by the plurality of semiconductor light emitting elements;
A second optical component that condenses light expanded by the plurality of first optical components to form exposure light; and
Control means for controlling driving of the plurality of semiconductor light emitting elements;
Cooling means for cooling the plurality of semiconductor light emitting elements,
The control means intermittently lights some or all of the plurality of semiconductor light emitting elements, adjusts the illuminance of exposure light, and intermittently turns some of the semiconductor light emitting elements to be intermittently lit. is lit and the semiconductor light emitting element to be turned at different timings, the semiconductor light emitting element that intermittently lit, an exposure apparatus according to claim Rukoto is turned with greater power than the maximum rated output. Generating light that forms exposure light from a plurality of semiconductor light emitting devices;
The light generated from a plurality of semiconductor light emitting elements is enlarged and condensed to form exposure light,
While cooling a plurality of semiconductor light emitting devices,
A part or all of the plurality of semiconductor light emitting elements are intermittently turned on, the illuminance of exposure light is adjusted, and a part of the semiconductor light emitting elements that are turned on intermittently is replaced with another semiconductor light emitting element that is turned on An exposure light irradiation method comprising: lighting a semiconductor light emitting element that is lit at different timings and intermittently lit at an output larger than a maximum rated output .   A method for producing a display panel substrate, wherein the substrate is exposed using the exposure apparatus according to claim 1. A method for producing a display panel substrate, wherein the substrate is exposed by irradiating the substrate with exposure light through a mask using the exposure light irradiation method according to claim 2 .

Images