CN101943867A - Proximity exposure device, its exposing light beam formation method and display panel substrate manufacture method - Google Patents

Proximity exposure device, its exposing light beam formation method and display panel substrate manufacture method Download PDF

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Publication number
CN101943867A
CN101943867A CN2010102153535A CN201010215353A CN101943867A CN 101943867 A CN101943867 A CN 101943867A CN 2010102153535 A CN2010102153535 A CN 2010102153535A CN 201010215353 A CN201010215353 A CN 201010215353A CN 101943867 A CN101943867 A CN 101943867A
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China
Prior art keywords
amplifying
emitting elements
light
lens
semiconductor light
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CN2010102153535A
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Chinese (zh)
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CN101943867B (en
Inventor
手塚秀和
土井秀明
根本亮二
吉武康裕
针山达雄
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2002Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G03F7/2006Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light using coherent light; using polarised light
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70275Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes
    • H01L21/0275Photolithographic processes using lasers

Abstract

The invention relates to a kind of proximity exposure device, its exposing light beam formation method and display panel substrate manufacture method.The present invention till from a plurality of amplifying lenses (43) to fly lens (45) light path and reflecting member (50) is set.To be equipped on the semiconductor light-emitting elements (42) of peripheral part of bottom substrate (51) and the amplifying lens (43) corresponding and be configured to these semiconductor light-emitting elements, from this semiconductor light-emitting elements (42) produce and through the amplifying lens (43) of correspondence and a wherein end of the light after amplifying at the predetermined angular of the shadow surface that does not depart from fly lens (45) with interior and be incident to fly lens (45).And, reflecting member (50) is configured to, produce and and after the other end of the light after amplifying reflects by this reflecting member (50) from the semiconductor light-emitting elements (42) of the peripheral part that is equipped on bottom substrate (41) through the amplifying lens (43) of correspondence, at the predetermined angular of the shadow surface that does not depart from fly lens (45) with interior and be incident to fly lens (45).

Description

Proximity exposure device, its exposing light beam formation method and display panel substrate manufacture method
Technical field
The present invention relates to a kind of proximity exposure device, its exposing light beam formation method and display panel substrate manufacture method, particularly relate in a kind of manufacturing of display panel (panel) substrate at LCD (display) device etc., use a plurality of semiconductor light-emitting elements for the light source that produces exposing light beam, and use vicinity (proximity) exposure device of fly lens (flyeye lens) as optical integrator (optical integrator), the exposing light beam formation method of proximity exposure device, and the manufacture method of using the display panel substrate of these apparatus and method.
Background technology
Thin film transistor (TFT) (the Thin FilmTransistor of the LCD device of using as display panel, TFT) substrate or chromatic filter (color filter) substrate, plasma (plasma) display pannel substrate, organic electroluminescent (Electroluminescence, EL) manufacturing of display panel substrate etc. is to use exposure device, forms pattern by photoetching (photolithography) technology on substrate and carries out.As exposure device, have use lens (lens) or mirror with the graphic pattern projection of mask (mask) to the substrate projection (projection) mode and small gap (adjacent gap, proximity gap) is set and with the pattern transfer of mask contiguous mode to substrate between mask and substrate.Contiguous mode is compared with projection pattern, pattern image dissection poor-performing, but illuminating optical system is simple in structure, and processing power is higher, is suitable for the volume production purposes.
In the past, for the light source of the generation exposing light beam of proximity exposure device, use be generally gases at high pressure (gas) to be sealing into lamp in the bulb (bulb) such as mercury lamp, Halogen lamp LED (halogen lamp), xenon lamp (xenon lamp) etc.The life-span of these lamps is shorter, after the service time that surpasses regulation, must change lamp.For example, be under 750 hours the situation in the life-span of lamp, if light a lamp continuously, then must replacing in per approximately 1 month 1 time.When lamp was changed, owing to exposure-processed will be interrupted, so productivity can reduce.
On the other hand, in patent documentation 1, disclosed a kind ofly in the exposure device of projection pattern, used the solid state light emitter element of light emitting diode (diode) etc. to be used as the technology of the light source of exposing light beam.The life-span of the semiconductor light-emitting elements of light emitting diode etc. the length of comparing with lamp reaches thousands of hours, and the situation that exposure-processed is interrupted is less, therefore, can expect productive raising.
[prior art document]
[patent documentation]
[patent documentation 1] Jap.P. spy opens the 2006-332077 communique
When using a plurality of semiconductor light-emitting elements for the light source that produces exposing light beam, such as patent documentation 1 as the record, the use fly lens is used as optical integrator.Fly lens is that a plurality of simple lenses are the lens arra (lens array) that arrangement in length and breadth forms.Figure 10 is the figure of the action of explanation fly lens.Expose to fly lens 45 after will amplifying respectively by amplifying lens 43 from the light that a plurality of semiconductor light-emitting elements 42 produce.Fly lens 45 will make the Illumination Distribution homogenising through the optical projection after a plurality of amplifying lenses 43 amplify to identical shadow surface and described light is overlapped.At this moment, if incident angle β, then is incident to the shadow surface that the light of fly lens 45 can depart from fly lens 45 greater than predetermined angular.
In recent years, along with the big pictureization of display panel, substrate maximizes, and for the light source of exposing light beam, just requires to use the higher light source of illumination.In the proximity exposure device of the exposure that is mainly used in large substrate, when using a plurality of semiconductor light-emitting elements when producing the light source of exposing light beam, the output of semiconductor light-emitting elements is much smaller than in the past lamp, therefore, must use hundreds of semiconductor light-emitting elements about thousands of abreast.There is following problems this moment: become the shadow surface that departs from fly lens greatly from the semiconductor light-emitting elements generation in the outside and the part of the light after amplifying lens amplifies to the incident angle of fly lens, thereby be not used in the formation of exposing light beam.
Because the defective that above-mentioned existing proximity exposure device exists, the inventor is based on being engaged in this type of product design manufacturing abundant for many years practical experience and professional knowledge, and the utilization of cooperation scientific principle, actively studied innovation, in the hope of founding a kind of new proximity exposure device, its exposing light beam formation method and display panel substrate manufacture method, can improve general existing proximity exposure device, make it have more practicality.Through constantly research, design, and, create the present invention who has practical value finally through after studying sample and improvement repeatedly.
Summary of the invention
Fundamental purpose of the present invention is, overcome the defective that existing proximity exposure device exists, and provide a kind of new proximity exposure device, its exposing light beam formation method and display panel substrate manufacture method, technical matters to be solved is that it is produced and through amplifying lens and the light after amplifying when being overlapped, efficient utilizes the light of each semiconductor light-emitting elements to form the higher exposing light beam of illumination well utilizing fly lens to make from a plurality of semiconductor light-emitting elements.And, the productivity of display panel substrate is improved, be very suitable for practicality.
The present invention compared with prior art has tangible advantage and beneficial effect.As known from the above, for achieving the above object, the invention provides a kind of proximity exposure device, its exposing light beam formation method and display panel substrate manufacture method.
The object of the invention to solve the technical problems realizes by the following technical solutions.Proximity exposure device of the present invention comprises: a plurality of semiconductor light-emitting elements produce the light that is used for forming exposing light beam; Bottom (base) substrate carries a plurality of semiconductor light-emitting elements; A plurality of amplifying lenses are established corresponding to each semiconductor light-emitting elements, will be amplified from the light that each semiconductor light-emitting elements produces; And fly lens, by through a plurality of amplifying lenses and the light after amplifying shines, and, utilize fly lens to make and the light after amplifying is overlapped and form exposing light beam through a plurality of amplifying lenses, wherein, the reflecting member that comprises the light path till from a plurality of amplifying lenses to fly lens and be provided with, being equipped on the semiconductor light-emitting elements of peripheral part of bottom substrate and the amplifying lens corresponding with these semiconductor light-emitting elements is configured to, from this semiconductor light-emitting elements produce and through the amplifying lens of correspondence and a wherein end of the light after amplifying at the predetermined angular of the shadow surface that does not depart from fly lens with interior and be incident to fly lens, reflecting member is configured to, from the semiconductor light-emitting elements of the peripheral part that is equipped on the bottom substrate produce and through the amplifying lens of correspondence and the other end of the light after amplifying by this reflecting member after reflecting, at the predetermined angular of the shadow surface that does not depart from fly lens with the interior fly lens that is incident to.
The object of the invention to solve the technical problems also realizes by the following technical solutions.The exposing light beam formation method of proximity exposure device of the present invention, a plurality of semiconductor light-emitting elements are equipped on the bottom substrate, produce the light that is used for forming exposing light beam from each semiconductor light-emitting elements, corresponding to each semiconductor light-emitting elements a plurality of amplifying lenses are set, after the amplifying lens of the light that will produce from each semiconductor light-emitting elements by correspondence amplified, expose to fly lens, utilize fly lens to make and the light after amplifying is overlapped and form exposing light beam through a plurality of amplifying lenses, wherein, light path till from a plurality of amplifying lenses to fly lens and reflecting member is set, be configured to being equipped on the semiconductor light-emitting elements of peripheral part of bottom substrate and the amplifying lens corresponding with these semiconductor light-emitting elements, from this semiconductor light-emitting elements produce and through the amplifying lens of correspondence and a wherein end of the light after amplifying at the predetermined angular of the shadow surface that does not depart from fly lens with interior and be incident to fly lens, reflecting member is configured to, from the semiconductor light-emitting elements of the peripheral part that is equipped on the bottom substrate produce and through the amplifying lens of correspondence and the other end of the light after amplifying by this reflecting member after reflecting, at the predetermined angular of the shadow surface that does not depart from fly lens with the interior fly lens that is incident to.
Produce and and in the light after amplifying from the semiconductor light-emitting elements of the peripheral part that is equipped on the bottom substrate through the amplifying lens of correspondence, the light of the fly lens of direct irradiation between till a wherein end of outer thoughtful this light of fly lens at the predetermined angular of the shadow surface that can not depart from fly lens with interior and be incident to fly lens, thereby be used in the formation of exposing light beam.And, produce and and in the light after amplifying from this semiconductor light-emitting elements through the amplifying lens of correspondence, after the light of the fly lens of direct irradiation between till the other end of outer thoughtful this light of fly lens is not reflected by catoptron, at the predetermined angular of the shadow surface that does not depart from fly lens with interior and be incident to fly lens, thereby 0 is used in the formation of exposing light beam.Thereby, produce and through amplifying lens and the light after amplifying when being overlapped when utilizing fly lens to make, but efficient utilizes the light of each semiconductor light-emitting elements to form the higher exposing light beam of illumination well from a plurality of semiconductor light-emitting elements.
And then, in the proximity exposure device of the present invention, with the optical axis that is equipped on the semiconductor light-emitting elements of most peripheral of bottom substrate and the amplifying lens corresponding with these semiconductor light-emitting elements towards the periphery of fly lens and dispose, and with catoptron and this optical axis almost parallel disposing.And, in the exposing light beam formation method of proximity exposure device of the present invention, with the optical axis that is equipped on the semiconductor light-emitting elements of most peripheral of bottom substrate and the amplifying lens corresponding with these semiconductor light-emitting elements towards the periphery of fly lens and dispose, and with catoptron and this optical axis almost parallel disposing.Owing to the optical axis of the semiconductor light-emitting elements of the most peripheral that will be equipped on the bottom substrate and the amplifying lens corresponding with these semiconductor light-emitting elements is disposing towards the periphery of fly lens, therefore, for make from this semiconductor light-emitting elements produce and through the amplifying lens of correspondence and a wherein end of the light after amplifying at predetermined angular with the interior fly lens that is incident to, distance then required, till from fly lens to this semiconductor light-emitting elements will diminish.
And then in the proximity exposure device of the present invention, the bottom substrate is made up a plurality of smooth substrates and is constituted, and a plurality of amplifying lenses constitute array-like at each this substrate.And, in the exposing light beam formation method of proximity exposure device of the present invention, a plurality of smooth substrates are made up and constituted the bottom substrate, a plurality of amplifying lenses are constituted array-like at each this substrate.Thereby easily semiconductor light-emitting elements is mounted on the bottom substrate, and adjusts the optical axis of each amplifying lens easily.
The object of the invention to solve the technical problems realizes in addition more by the following technical solutions.In the manufacture method of display panel substrate of the present invention, use above-mentioned any proximity exposure device to carry out the exposure of substrate, perhaps, the exposing light beam that uses the exposing light beam formation method of above-mentioned any proximity exposure device and form is exposed to substrate via mask, to carry out the exposure of substrate.By using the exposing light beam formation method of above-mentioned proximity exposure device or proximity exposure device, the illumination of exposing light beam increases and the time shutter shortening, and the life-span of the light source of exposing light beam is elongated, so the productivity of display panel substrate is improved.
[effect of invention]
By technique scheme, proximity exposure device of the present invention, its exposing light beam formation method and display panel substrate manufacture method have following advantage and beneficial effect at least: according to the exposing light beam formation method of proximity exposure device of the present invention and proximity exposure device, light path till from a plurality of amplifying lenses to fly lens and reflecting member is set, be configured to being equipped on the semiconductor light-emitting elements of peripheral part of bottom substrate and the amplifying lens corresponding with these semiconductor light-emitting elements, from this semiconductor light-emitting elements produce and through the amplifying lens of correspondence and a wherein end of the light after amplifying at the predetermined angular of the shadow surface that does not depart from fly lens with interior and be incident to fly lens, reflecting member is configured to, from the semiconductor light-emitting elements of the peripheral part that is equipped on the bottom substrate produce and through the amplifying lens of correspondence and the other end of the light after amplifying by this reflecting member after reflecting, at the predetermined angular of the shadow surface that does not depart from fly lens with the interior fly lens that is incident to, thus, produce and through amplifying lens and the light after amplifying when being overlapped when utilizing fly lens to make, but efficient utilizes the light of each semiconductor light-emitting elements to form the higher exposing light beam of illumination well from a plurality of semiconductor light-emitting elements.
And then, exposing light beam formation method according to proximity exposure device of the present invention and proximity exposure device, with the optical axis that is equipped on the semiconductor light-emitting elements of most peripheral of bottom substrate and the amplifying lens corresponding with these semiconductor light-emitting elements towards the periphery of fly lens and dispose, and with reflecting member and this optical axis almost parallel disposing, thus, can dwindle for make from this semiconductor light-emitting elements produce and through the amplifying lens of correspondence and a wherein end of the light after amplifying at predetermined angular with interior required when being incident to fly lens, distance till from fly lens to this semiconductor light-emitting elements.
And then, exposing light beam formation method according to proximity exposure device of the present invention and proximity exposure device, a plurality of smooth substrates are made up and constituted the bottom substrate, a plurality of amplifying lenses are constituted array-like at each this substrate, thus, can easily semiconductor light-emitting elements be mounted on the bottom substrate, and can easily adjust the optical axis of each amplifying lens.
According to the manufacture method of display panel substrate of the present invention, the illumination of exposing light beam increases and the time shutter shortening, and the life-span of the light source of exposing light beam is elongated, therefore the productivity of display panel substrate is improved.
In sum, the invention relates to a kind of proximity exposure device, its exposing light beam formation method and display panel substrate manufacture method.The present invention till from a plurality of amplifying lenses to fly lens light path and reflecting member is set.Be configured to being equipped on the semiconductor light-emitting elements of peripheral part of bottom substrate and the amplifying lens corresponding with these semiconductor light-emitting elements, from this semiconductor light-emitting elements produce and through the amplifying lens of correspondence and a wherein end of the light after amplifying at the predetermined angular of the shadow surface that does not depart from fly lens with interior and be incident to fly lens.And, reflecting member is configured to, from the semiconductor light-emitting elements of the peripheral part that is equipped on the bottom substrate produce and through the amplifying lens of correspondence and the other end of the light after amplifying by this reflecting member after reflecting, at the predetermined angular of the shadow surface that does not depart from fly lens with interior and be incident to fly lens.The present invention has obvious improvement technically, and has tangible good effect, really is a new and innovative, progressive, practical new design.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of instructions, and for above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, below especially exemplified by preferred embodiment, and conjunction with figs., be described in detail as follows.
Description of drawings
Fig. 1 is the figure of schematic configuration of the proximity exposure device of expression an embodiment of the invention.
Fig. 2 is the figure of an example of expression light source cell.
Fig. 3 a, Fig. 3 b are the figure of the optical axis direction of the semiconductor light-emitting elements of expression light source cell shown in Figure 2 and amplifying lens.
Fig. 4 is the figure of another example of expression light source cell.
Fig. 5 a, Fig. 5 b are the figure of the optical axis direction of the semiconductor light-emitting elements of expression light source cell shown in Figure 4 and amplifying lens.
Fig. 6 is the figure that the exposing light beam formation method to the proximity exposure device of an embodiment of the invention describes.
Fig. 7 be the optical axis of the semiconductor light-emitting elements of the expression most peripheral that will be equipped on the bottom substrate and the amplifying lens corresponding with these semiconductor light-emitting elements than the periphery of fly lens more towards the figure of the example of inboard and configuration.
Fig. 8 is the process flow diagram of an example of manufacturing process of the TFT substrate of expression LCD device.
Fig. 9 is the process flow diagram of an example of manufacturing process of the base plate of color light filter of expression LCD device.
Figure 10 is the figure that the action to fly lens describes.
1: substrate
2: mask
3: base
The 4:X guides
The 5:X objective table
The 6:Y guides
The 7:Y objective table
8: the θ objective table
9: the chuck brace table
10: chuck
20: the mask fixator
30: the exposing light beam illuminating device
32: the collimation lens group
33: level crossing
35: illuminance transducer
40: light source cell
41: the bottom substrate
41a, 41b, 41c: substrate
42: semiconductor light-emitting elements
43: amplifying lens
45: fly lens
46: control circuit
47: cooling component
47a: heat conduction member
48: cooling device
50: catoptron
101~106,201~204: step
α: predetermined angular
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention, below in conjunction with accompanying drawing and preferred embodiment, to proximity exposure device, its exposing light beam method of formationing and its embodiment of display panel substrate manufacture method, structure, method, step, feature and the effect thereof that foundation the present invention proposes, describe in detail as after.
Relevant aforementioned and other technology contents, characteristics and effect of the present invention can clearly present in the following detailed description that cooperates with reference to graphic preferred embodiment.For convenience of description, in following embodiment, components identical is represented with identical numbering.
Fig. 1 is the figure of schematic configuration of the proximity exposure device of expression one embodiment of the present invention.The proximity exposure device comprises base (base) 3, X guides (guide) 4, X objective table (stage) 5, Y guides 6, Y objective table 7, θ objective table 8, chuck (chuck) brace table 9, chuck 10, mask fixator (mask holder) 20 and exposing light beam illuminating device 30 and constitutes.The proximity exposure device also comprises the temperature control unit (unit) substrate 1 being moved on the chuck 10 or substrate 1 is managed from substrate transferring robot (robot) that chuck 10 is taken out of and to the temperature in installing etc. except comprising described member.
In addition, below XY direction in the illustrated embodiment only be illustration, also directions X and Y direction can be changed.
In Fig. 1, chuck 10 is positioned at the exposure position place of the exposure of carrying out substrate 1.In the sky of exposure position, the mask fixator 20 that keeps mask 2 is being set.The periphery of 20 pairs of masks 2 of mask fixator carries out vacuum suction and keeps this mask 2.The sky at the mask 2 that remains in mask fixator 20 is disposing exposing light beam illuminating device 30.In when exposure, see through mask 2 and expose to substrate 1 from the exposing light beam of exposing light beam illuminating device 30, thus with the pattern transfer of mask 2 to the surface of substrate 1, thereby on this substrate 1, form pattern.
Chuck 10 moves to loading (load)/unloading (unload) position away from exposure position by X objective table 5.At the load/unload position place, by not shown substrate transferring robot substrate 1 is moved on the chuck 10, or substrate 1 is taken out of from chuck 10.Use is arranged on a plurality of in the chuck 10 and goes up ejector pins (pin) and substrate 1 is loaded on the chuck 10 and with substrate 1 is unloaded from chuck 10.Last ejector pin is incorporated in the inside of chuck 10, when being loaded into substrate 1 on the chuck 10 rising from the inside of chuck 10, should go up ejector pin and admit substrate 1 from the substrate transferring robot, and with substrate 1 when chuck 10 is unloaded, ejector pin consigns to the substrate transferring robot with substrate 1 on this.
Chuck 10 is equipped on θ objective table 8 via chuck brace table 9, and Y objective table 7 and X objective table 5 are being set below this θ objective table 8.X objective table 5 carries and is being arranged on the X guides 4 of base 3, and moves to directions X (the drawing transverse direction of Fig. 1) along this X guides 4.Y objective table 7 carries and is being arranged on the Y guides 6 of X objective table 5, and moves to Y direction (the drawing depth direction of Fig. 1) along this Y guides 6.θ objective table 8 carries on Y objective table 7, and rotates to the θ direction.Chuck brace table 9 carries on θ objective table 8, and is supporting chuck 10 in many places.
By X objective table 5 to directions X move and Y objective table 7 to the moving of Y direction, chuck 10 moves between load/unload position and exposure position.At the load/unload position place, by X objective table 5 to the moving of directions X, Y objective table 7 to the Y direction move and θ objective table 8 to the rotation of θ direction, be equipped on the prealignment (pre-alignment) of the substrate 1 of chuck 10.At the exposure position place, by X objective table 5 to directions X move and Y objective table 7 to the moving of Y direction, the substrate 1 that is equipped on chuck 10 moves to the stepping (step) of XY direction.And, by X objective table 5 to the moving of directions X, Y objective table 7 to the Y direction move and θ objective table 8 to the rotation of θ direction, carry out the aligning of substrate 1.And, by not shown Z-inclination (tilt) mechanism mask fixator 20 is moved and inclination to Z direction (the drawing above-below direction of Fig. 1), thus, carry out the gap alignment of mask 2 and substrate 1.
In addition, in the present embodiment, make mask fixator 20 move and tilt to the Z direction, carry out the gap alignment of mask 2 and substrate 1 thus, but also the Z-leaning device can be set on chuck brace table 9, and make chuck 10 move and tilt to the Z direction, carry out the gap alignment of mask 2 and substrate 1 thus.
Exposing light beam illuminating device 30 comprises collimation lens group 32, level crossing 33, illuminance transducer 35 and light source cell 40 and constitutes.Light source cell 40 described later produces exposing light beam when carrying out the exposure of substrate 1, and does not produce exposing light beam when not carrying out the exposure of substrate 1.The exposing light beam that produces from light source cell 40 sees through collimation lens group 32 and after becoming the parallel rays bundle, exposes to mask 2 by level crossing 33 reflections.Exposing light beam by being irradiated to mask 2 with the pattern transfer of mask 2 to substrate 1, thereby carry out the exposure of substrate 1.
Near the dorsal part of level crossing 33, disposing illuminance transducer 35.The less opening that the part that makes exposing light beam is passed through is being set on level crossing 33.Illuminance transducer 35 receives by the light behind the opening of level crossing 33, measures with the illumination to exposing light beam.The measurement result of illuminance transducer 35 is imported in the light source cell 40.
Fig. 2 is the figure of an example of expression light source cell.Light source cell 40 comprises bottom substrate 41, semiconductor light-emitting elements 42, amplifying lens 43, fly lens 45, control circuit 46, cooling component 47, cooling device 48 and catoptron 50 and constitutes.On bottom substrate 41, carrying a plurality of semiconductor light-emitting elements 42.Bottom substrate 41 drives each semiconductor light-emitting elements 42 by the control of control circuit 46.Each semiconductor light-emitting elements 42 is made of light emitting diode or laser diode (laser diode) etc., and produces the light that forms exposing light beam.Control circuit 46 is controlled the driving of each semiconductor light-emitting elements 42 according to the measurement result of illuminance transducer 35.
In addition, figure 2 illustrates 9 semiconductor light-emitting elements 42, but in the light source cell of reality, using hundreds of semiconductor light-emitting elements about thousands of.
Corresponding to each semiconductor light-emitting elements 42 amplifying lens 43 is being set, each amplifying lens 43 will be amplified from the light that each semiconductor light-emitting elements 42 produces, and makes this rayed to fly lens 45.Fig. 3 a, Fig. 3 b are the figure of the optical axis direction of the semiconductor light-emitting elements of expression light source cell shown in Figure 2 and amplifying lens.The semiconductor light-emitting elements 42 when the arrow of Fig. 3 a is represented transverse observation bottom substrate 41 and the optical axis direction of amplifying lens 43.And, the semiconductor light-emitting elements 42 the when arrow of Fig. 3 b is represented from top view bottom substrate 41 and the optical axis direction of amplifying lens 43.
Shown in Fig. 3 b, bottom substrate 41 is that a plurality of substrate 41a, 41b, 41c are made up and constitute.In this example, be configured in central portion substrate 41a up and down and about substrate 41b shown in Fig. 3 a, the shape after being a part with the side of cylinder and cutting.And, the surface of the substrate 41a of central portion be with the surface of up and down substrate 41b with about the shape that combines of the surface of substrate 41b.Substrate 41c is smooth, and a plurality of semiconductor light-emitting elements 42 are carrying obliquely via heat conduction member 47a.The optical axis that is equipped on the semiconductor light-emitting elements 42 of substrate 41a, 41b and the amplifying lens 43 corresponding with these semiconductor light-emitting elements is shown in Fig. 3 a, Fig. 3 b, towards the central authorities of fly lens 45 and disposing.The optical axis that is equipped on the semiconductor light-emitting elements 42 of substrate 41c and the amplifying lens 43 corresponding with these semiconductor light-emitting elements is disposing in parallel with each other towards fly lens 45 shown in Fig. 3 a, Fig. 3 b.
Fig. 4 is the figure of another example of expression light source cell.And Fig. 5 a, Fig. 5 b are the figure of the optical axis direction of the semiconductor light-emitting elements of expression light source cell shown in Figure 4 and amplifying lens.The semiconductor light-emitting elements 42 when the arrow of Fig. 5 a represents to observe the A-A portion section of the bottom substrate 41 shown in Fig. 5 b and the optical axis direction of amplifying lens 43.And, the semiconductor light-emitting elements 42 the when arrow of Fig. 5 b is represented from top view bottom substrate 41 and the optical axis direction of amplifying lens 43.
In this example, bottom substrate 41 is that a plurality of smooth substrate 41a, 41b, 41c are made up and constitute.The substrate 41b, the 41c that are positioned at the peripheral part of bottom substrate 41 are being provided with obliquely towards fly lens 45.Amplifying lens 43 is at each substrate 41a, 41b, 41c and constitute array-like.The optical axis that is equipped on the semiconductor light-emitting elements 42 of each substrate 41a, 41b, 41c and the amplifying lens 43 corresponding with these semiconductor light-emitting elements is disposing in parallel with each other towards fly lens 45 shown in Fig. 5 a, Fig. 5 b.Owing to being made up, a plurality of smooth substrate 41a, 41b, 41c constitute bottom substrate 41, and with a plurality of amplifying lenses 43 at each substrate 41a, 41b, 41c and constitute array-like, therefore easily semiconductor light-emitting elements 42 is mounted to bottom substrate 41, and carries out the adjustment of the optical axis of amplifying lens 43 easily.
In Fig. 2 and Fig. 4, catoptron 50 is being set round light path from a plurality of amplifying lenses 43 to fly lens 45.In Fig. 2 and example shown in Figure 4, bottom substrate 41 and fly lens 45 are quadrilateral, and bottom substrate 41 is greater than fly lens 45, therefore, and the shape after catoptron 50 is top with quadrangular pyramid and cuts.Catoptron 50 will produce and through the amplifying lens 43 of correspondence and the part of the light after amplifying is reflected from the semiconductor light-emitting elements on substrate 41b, the 41c of the peripheral part that is equipped on bottom substrate 41 42, and expose to fly lens 45.
Fly lens 45 makes through a plurality of amplifying lenses 43 and light after amplifying is overlapped, to form the uniform exposing light beam of Illumination Distribution.At this moment, fly lens 45 will be from photosynthetic with the formation exposing light beam with through catoptron 50 reflection back incidents of the light of amplifying lens 43 direct incidents.Can depart from the shadow surface of fly lens 45 from amplifying lens 43 or catoptron 50 with the light that is incident to fly lens 45 greater than the incident angle of predetermined angular α, and not be used in the formation of exposing light beam.
At the back side of bottom substrate 41, cooling component 47 is installed.Cooling component 47 has the cooling water path that chilled water is flowed through in inside, come each semiconductor light-emitting elements 42 is cooled off by the chilled water of supplying with to cooling water path from cooling device 48.In addition, cooling component 47 and cooling device 48 are not limited to this, also can adopt the air cooling mode that comprises heat sink and cooling fan (fan).
Below, the exposing light beam formation method of the proximity exposure device of one embodiment of the present invention is described.Fig. 6 is the figure that the exposing light beam formation method to the proximity exposure device of one embodiment of the present invention describes.In the present invention, as shown in Figure 6, be configured to being equipped on the semiconductor light-emitting elements 42 of peripheral part of bottom substrate 41 and the amplifying lens 43 corresponding with these semiconductor light-emitting elements, produce and through the amplifying lens 43 of correspondence and a wherein end of the light after amplifying from this semiconductor light-emitting elements 42, at the predetermined angular α of the shadow surface that does not depart from fly lens 45 with interior and be incident to fly lens 45.And, catoptron 50 is configured to, from the semiconductor light-emitting elements 42 of the peripheral part that is equipped on bottom substrate 41 produce and through the amplifying lens 43 of correspondence and the other end of the light after amplifying by these catoptron 50 reflections after, at the predetermined angular α of the shadow surface that does not depart from fly lens 45 with interior and be incident to fly lens 45.
Produce and and in the light after amplifying from the semiconductor light-emitting elements 42 of the peripheral part that is equipped on bottom substrate 41 through the amplifying lens 43 of correspondence, the light of the fly lens 45 of direct irradiation between till a wherein end of outer thoughtful this light of fly lens 45 at the predetermined angular α of the shadow surface that does not depart from fly lens 45 with interior and be incident to fly lens 45, thereby be used in the formation of exposing light beam.And, produce and and in the light after amplifying from this semiconductor light-emitting elements 42 through the amplifying lens 43 of correspondence, not the light of the fly lens 45 of direct irradiation between till the other end of outer thoughtful this light of fly lens 45 by catoptron 50 reflections after, at the predetermined angular α of the shadow surface that does not depart from fly lens 45 with interior and be incident to fly lens 45, thereby be used in the formation of exposing light beam.Thereby, produce and through amplifying lens 43 and the light after amplifying when being overlapped when utilizing fly lens 45 to make, but efficient utilizes the light of each semiconductor light-emitting elements 42 to form the higher exposing light beam of illumination well from a plurality of semiconductor light-emitting elements 42.
And then, in the present embodiment, as shown in Figure 6, the optical axis that is equipped on the semiconductor light-emitting elements 42 of most peripheral of bottom substrate 41 and the amplifying lens 43 corresponding with these semiconductor light-emitting elements is disposed towards the periphery of fly lens 45, and with catoptron 50 and this optical axis almost parallel disposing.
Fig. 7 be the optical axis of the semiconductor light-emitting elements of the expression most peripheral that will be equipped on the bottom substrate and the amplifying lens corresponding with these semiconductor light-emitting elements than the periphery of fly lens more towards the figure of the example of inboard and configuration.At the optical axis of the semiconductor light-emitting elements 42 of the most peripheral that will be equipped on bottom substrate 41 and the amplifying lens 43 corresponding with these semiconductor light-emitting elements than the periphery of fly lens 45 during more towards inboard and configuration, for make from this semiconductor light-emitting elements 42 produce and through the amplifying lens 43 of correspondence and a wherein end of the light after amplifying at predetermined angular α with the interior fly lens 45 that is incident to, the distance till must prolonging from fly lens 45 to this semiconductor light-emitting elements 42.
In embodiment shown in Figure 6, with the optical axis that is equipped on the semiconductor light-emitting elements 42 of most peripheral of bottom substrate 41 and the amplifying lens 43 corresponding with these semiconductor light-emitting elements towards the periphery of fly lens 45 and dispose, therefore compare with example shown in Figure 7, can dwindle for make from this semiconductor light-emitting elements 42 produce and through the amplifying lens 43 of correspondence and a wherein end of the light after amplifying at predetermined angular α with interior required when being incident to fly lens 45, distance till from fly lens 45 to this semiconductor light-emitting elements 42.
According to embodiment discussed above, light path till from a plurality of amplifying lenses 43 to fly lens 45 and catoptron 50 is set, be configured to being equipped on the semiconductor light-emitting elements 42 of peripheral part of bottom substrate 41 and the amplifying lens 43 corresponding with these semiconductor light-emitting elements, from this semiconductor light-emitting elements 42 produce and through the amplifying lens 43 of correspondence and a wherein end of the light after amplifying at the predetermined angular α of the shadow surface that does not depart from fly lens 45 with interior and be incident to fly lens 45, and catoptron 50 is configured to, from the semiconductor light-emitting elements 42 of the peripheral part that is equipped on bottom substrate 41 produce and through the amplifying lens 43 of correspondence and the other end of the light after amplifying by these catoptron 50 reflections after, at the predetermined angular α of the shadow surface that does not depart from fly lens 45 with interior and be incident to fly lens 45, thus, produce and through amplifying lens 43 and the light after amplifying when being overlapped can efficient utilize the light of each semiconductor light-emitting elements 42 and form the higher exposing light beam of illumination well utilizing fly lens 45 to make from a plurality of semiconductor light-emitting elements 42.
And then, with the optical axis that is equipped on the semiconductor light-emitting elements 42 of most peripheral of bottom substrate 41 and the amplifying lens 43 corresponding with these semiconductor light-emitting elements towards the periphery of fly lens 45 and dispose, and with catoptron 50 and this optical axis almost parallel disposing, thus, can dwindle for make from this semiconductor light-emitting elements 42 produce and through the amplifying lens 43 of correspondence and a wherein end of the light after amplifying at predetermined angular α with interior required when being incident to fly lens 45, distance till from fly lens 45 to this semiconductor light-emitting elements 42.
And then, according to example shown in Figure 4, a plurality of smooth substrate 41a, 41b, 41c are made up and constituted bottom substrate 41, and with a plurality of amplifying lenses at each this substrate 41a, 41b, 41c and constitute array-like, can easily semiconductor light-emitting elements 42 be mounted on the bottom substrate 41 thus, and can easily adjust the optical axis of this amplifying lens 43.
Use proximity exposure device of the present invention to expose, perhaps, the exposing light beam that uses the exposing light beam formation method of proximity exposure device of the present invention and form is exposed to substrate via mask, to carry out the exposure of substrate, thus, the illumination of exposing light beam increases and the time shutter shortening, and, the life-span of the light source of exposing light beam is elongated, therefore can improve the productivity of display panel substrate.
For example, Fig. 8 is the process flow diagram of an example of manufacturing process of the TFT substrate of expression LCD device.Form in the operation (step 101) at film, by sputtering method or plasma activated chemical vapour deposition (Chemical Vapor Deposition, CVD) method etc. forms on substrate as the film of liquid crystal drive with the electric conductor film of transparency electrode or insulator film etc.In resist-coating operation (step 102), wait by roller (roll) formula rubbing method to be coated with photosensitive resin material (photoresist (photoresist)), form photoresist film to form in the operation (step 101) on the formed film at film.In exposure process (step 103), use proximity exposure device or projection aligner to wait pattern transfer with mask to photoresist film.In developing procedure (step 104), by shower type (shower) development method etc., developer solution is supplied on the photoresist film, to remove the not part of photoresist film.In etching (etching) operation (step 105), by wet type (wet) etching, the part of form film in the film that forms in the operation (step 101), not covered by photoresist film is removed.In stripping process (step 106), will in etching work procedure (step 105), finish the photoresist film of mask effect and peel off by stripper.Before or after these operations, implement the washing/drying operation of substrate as required.Carry out these operations of several repeatedly, thereby on substrate, form tft array.
And Fig. 9 is the process flow diagram of an example of manufacturing process of the base plate of color light filter of expression LCD device.Form in the operation (step 201) at black matrix" (black matrix), on substrate, form black matrix" by resist-coating, exposure, development, etching, the processing of peeling off etc.Form in the operation (step 202) at colored pattern,, on substrate, form colored pattern by decoration method, pigment dispersing method, print process, electrochemical plating or the like.At the colored pattern of R, G, B, carry out this operation repeatedly.Form in the operation (step 203) at diaphragm, on colored pattern, form diaphragm, form in the operation (step 204), on diaphragm, form ELD in ELD.Before these operations, midway or afterwards, implement the washing/drying operation of substrate as required.
In the manufacturing process of TFT substrate shown in Figure 8, in exposure process (step 103), in the manufacturing process of base plate of color light filter shown in Figure 9, form in the exposure-processed of operation (step 201) and colored pattern formation operation (step 202) at black matrix", can be suitable for the exposing light beam formation method of proximity exposure device of the present invention or proximity exposure device.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the structure that can utilize above-mentioned announcement and technology contents are made a little change or be modified to the equivalent embodiment that is equal to change, but every content that does not break away from technical solution of the present invention, come any simple modification that above embodiment is done according to technical spirit of the present invention, be equal to change and modify, all still belong in the scope of technical solution of the present invention.

Claims (8)

1. proximity exposure device comprises:
A plurality of semiconductor light-emitting elements produce the light that is used to form exposing light beam;
The bottom substrate carries described a plurality of semiconductor light-emitting elements;
A plurality of amplifying lenses are established corresponding to each semiconductor light-emitting elements, will be amplified from the light that each semiconductor light-emitting elements produces; And
Fly lens, by through described a plurality of amplifying lenses and the light after amplifying shines,
Utilize described fly lens to make through described a plurality of amplifying lenses and the light after amplifying is overlapped and forms described exposing light beam, this proximity exposure device is characterised in that:
The reflecting member that comprises the light path till from described a plurality of amplifying lenses to described fly lens and be provided with,
Being equipped on the semiconductor light-emitting elements of peripheral part of described bottom substrate and the amplifying lens corresponding with these semiconductor light-emitting elements is configured to, from this semiconductor light-emitting elements produce and through the amplifying lens of correspondence and a wherein end of the light after amplifying at the predetermined angular of the shadow surface that does not depart from described fly lens with interior and be incident to described fly lens
Described reflecting member is configured to, from the semiconductor light-emitting elements of the peripheral part that is equipped on described bottom substrate produce and through the amplifying lens of correspondence and the other end of the light after amplifying by this reflecting member after reflecting, be incident to described fly lens at the predetermined angular of the shadow surface that does not depart from described fly lens with interior.
2. proximity exposure device according to claim 1 is characterized in that:
Be equipped on the semiconductor light-emitting elements of most peripheral of described bottom substrate and the amplifying lens corresponding and make optical axis towards the periphery of described fly lens and dispose with these semiconductor light-emitting elements,
Described reflecting member be with this optical axis almost parallel disposing.
3. proximity exposure device according to claim 1 and 2 is characterized in that:
Described bottom substrate is made up a plurality of smooth substrates and is constituted, and described a plurality of amplifying lenses constitute array-like at each this substrate.
4. the exposing light beam formation method of a proximity exposure device,
A plurality of semiconductor light-emitting elements are equipped on the bottom substrate, produce the light that is used to form exposing light beam from each semiconductor light-emitting elements,
Corresponding to each semiconductor light-emitting elements a plurality of amplifying lenses are set, after the amplifying lens of the light that will produce from each semiconductor light-emitting elements by correspondence amplified, expose to fly lens,
Utilize fly lens to make through a plurality of amplifying lenses and the light after amplifying is overlapped and forms exposing light beam, this exposing light beam formation method is characterised in that:
Light path till from a plurality of amplifying lenses to fly lens and reflecting member is set,
Be configured to being equipped on the semiconductor light-emitting elements of peripheral part of bottom substrate and the amplifying lens corresponding with these semiconductor light-emitting elements, from this semiconductor light-emitting elements produce and through the amplifying lens of correspondence and a wherein end of the light after amplifying at the predetermined angular of the shadow surface that does not depart from fly lens with interior and be incident to fly lens
Reflecting member is configured to, from the semiconductor light-emitting elements of the peripheral part that is equipped on the bottom substrate produce and through the amplifying lens of correspondence and the other end of the light after amplifying by this reflecting member after reflecting, at the predetermined angular of the shadow surface that does not depart from fly lens with the interior fly lens that is incident to.
5. the exposing light beam formation method of proximity exposure device according to claim 4 is characterized in that:
With the optical axis that is equipped on the semiconductor light-emitting elements of most peripheral of bottom substrate and the amplifying lens corresponding with these semiconductor light-emitting elements towards the periphery of fly lens and dispose,
With reflecting member and this optical axis almost parallel disposing.
6. according to the exposing light beam formation method of claim 4 or 5 described proximity exposure devices, it is characterized in that:
A plurality of smooth substrates are made up and constituted the bottom substrate, a plurality of amplifying lenses are constituted array-like at each this substrate.
7. the manufacture method of a display panel substrate is characterized in that:
Use is carried out the exposure of substrate according to each described proximity exposure device in the claim 1 to 3.
8. the manufacture method of a display panel substrate is characterized in that:
The exposing light beam that the exposing light beam formation method of using according to each described proximity exposure device in the claim 4 to 6 is formed exposes to substrate via mask, to carry out the exposure of substrate.
CN2010102153535A 2009-07-07 2010-06-25 Adjacent exposure device, forming method of exposure beam and manufacturing method of panel substrate Expired - Fee Related CN101943867B (en)

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