JP2012220619A - Exposure apparatus, exposure method, and method for manufacturing display panel substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To uniformize a lifetime of each semiconductor light-emitting element while keeping intensity of exposure light constant when the exposure light is formed by using a plurality of semiconductor light-emitting elements.SOLUTION: Intensity of exposure light irradiated from an exposure light irradiating device 30 is detected while temperature of each semiconductor light-emitting element 42 is detected. On the basis of teh detecting result of the temperature of each of the semiconductor light-emitting elements 42, lighting time of the semiconductor light-emitting elements of which the temperature is lower than a predetermined temperature or a predetermined temperature range is made to be longer than the lighting time of the semiconductor light-emitting elements of which the temperature is higher than the predetermined temperature or the predetermined temperature range, or driving current of the semiconductor light-emitting elements of which the temperature is lower than the predetermined temperature or the predetermined temperature range is made to be larger than the driving current of the semiconductor light-emitting element of which the temperature is higher than the predetermined temperature or the predetermined temperature range.

Description

  The present invention relates to an exposure apparatus using a plurality of semiconductor light emitting elements as a light source for generating exposure light, an exposure method, and a method for manufacturing a display panel substrate using them in the manufacture of a display panel substrate such as a liquid crystal display device. About.

  Manufacturing of TFT (Thin Film Transistor) substrates, color filter substrates, plasma display panel substrates, organic EL (Electroluminescence) display panel substrates, and the like of liquid crystal display devices used as display panels is performed using photolithography using an exposure apparatus. This is performed by forming a pattern on the substrate by a technique. As an exposure apparatus, a projection method in which a mask pattern is projected onto a substrate using a lens or a mirror, and a minute gap (proximity gap) is provided between the mask and the substrate to transfer the mask pattern to the substrate. There is a proximity method. The proximity method is inferior in pattern resolution performance to the projection method, but the configuration of the irradiation optical system is simple, the processing capability is high, and it is suitable for mass production.

  Conventionally, a lamp in which high pressure gas is enclosed in a bulb, such as a mercury lamp, a halogen lamp, or a xenon lamp, has been used as a light source for generating exposure light of a proximity exposure apparatus. These lamps have a short life and must be replaced after a predetermined usage time. For example, if the lamp has a lifetime of 750 hours and it is lit continuously, it needs to be replaced about once a month. When the lamp is replaced, the exposure process is interrupted, resulting in a decrease in productivity.

  On the other hand, Patent Document 1 discloses a technique of using a solid light source element such as a light emitting diode as a light source of exposure light in a projection type exposure apparatus. A semiconductor light emitting device such as a light emitting diode has a lifetime of several thousand to several tens of thousands of hours, which is longer than that of a lamp, and exposure processing is rarely interrupted.

  In recent years, as the size of the substrate is increased with the increase in the screen size of the display panel, a light source with higher illuminance has been required for the exposure light source. In proximity exposure equipment mainly used for exposure of large substrates, when using multiple semiconductor light emitting elements as a light source that generates exposure light, the output of the semiconductor light emitting elements is much smaller than conventional lamps, Several hundred to several thousand semiconductor light emitting elements must be used side by side. In that case, in order to suppress a decrease in output due to heat generation of each semiconductor light emitting element, it is necessary to efficiently cool a large number of semiconductor light emitting elements. In Patent Document 2, the number of semiconductor light-emitting elements that are turned on among a plurality of semiconductor light-emitting elements is changed to adjust the illuminance of exposure light, and the semiconductor light-emitting elements that are turned off are changed over time. Thus, a technique for efficiently cooling a plurality of semiconductor light emitting elements is disclosed.

JP 2006-332077 A JP 2010-256428 A

  The lifetime of semiconductor light emitting devices such as light emitting diodes varies due to individual differences. In addition, the lifetime of each semiconductor light emitting element varies greatly depending on the usage conditions such as temperature during lighting and output. For this reason, if a semiconductor light emitting element that has reached the end of its life is replaced each time, it is necessary to frequently perform replacement work, and there is a problem that the exposure process is interrupted and the improvement in productivity is hindered. On the other hand, if a plurality of semiconductor light emitting elements are replaced together in order to reduce the number of replacement operations, usable semiconductor light emitting elements that have not reached the end of their life are also removed, and the running cost increases and the semiconductor light emitting elements increase. A part of the energy required for manufacturing is wasted.

  An object of the present invention is to equalize the lifetime of each semiconductor light emitting element while keeping the intensity of the exposure light constant when forming exposure light using a plurality of semiconductor light emitting elements. Another object of the present invention is to improve the productivity of a display panel substrate.

  An exposure apparatus of the present invention includes a chuck that supports a substrate, a plurality of semiconductor light emitting elements, a light source that forms exposure light by superimposing light generated from the plurality of semiconductor light emitting elements, and exposure light from the light source. An irradiation device for irradiating the substrate supported by the chuck, and a moving means for relatively moving the chuck and the irradiation device, the chuck and the irradiation device are relatively moved by the moving means, and are irradiated from the irradiation device. An exposure apparatus that exposes a substrate with the exposure light, an intensity detection means for detecting the intensity of exposure light emitted from the irradiation apparatus, and a plurality of temperature detection means for detecting temperatures of a plurality of semiconductor light emitting elements of the light source When the substrate is not exposed, the semiconductor light emitting elements are turned off without supplying the driving current to the plurality of semiconductor light emitting elements of the light source, and the plurality of semiconductor light emitting elements of the light source are turned on while the substrate is exposed. A dynamic current is supplied to light each semiconductor light emitting element intermittently. Based on the detection results of the plurality of temperature detecting means, the lighting time of the semiconductor light emitting element having a temperature lower than a predetermined temperature or a predetermined temperature range is set to a predetermined temperature or Control means for compensating for a change in the intensity of the exposure light detected by the intensity detection means by extending the lighting time of the semiconductor light emitting element having a temperature higher than the predetermined temperature range.

  In addition, the exposure method of the present invention includes a light source having a plurality of semiconductor light emitting elements, which supports a substrate with a chuck, and forms exposure light by superimposing light generated from the plurality of semiconductor light emitting elements. Is an exposure method in which the substrate is exposed to the exposure light irradiated from the irradiation device, and the substrate is not exposed. At this time, without supplying driving current to the plurality of semiconductor light emitting elements of the light source, each semiconductor light emitting element is turned off, and during the exposure of the substrate, the driving current is supplied to the plurality of semiconductor light emitting elements of the light source. The light emitting element is turned on intermittently, the intensity of exposure light emitted from the irradiation device is detected, the temperature of each semiconductor light emitting element is detected, and a predetermined temperature or a predetermined temperature is detected based on the temperature detection result of each semiconductor light emitting element. The lighting time of the semiconductor light-emitting device of less than degrees range temperature, are those that are longer than the lighting time of the semiconductor light emitting element of a predetermined temperature or a temperature higher than the predetermined temperature range, compensate for the change in the intensity of the detected exposure light.

  Alternatively, the exposure apparatus of the present invention includes a chuck that supports a substrate, a plurality of semiconductor light emitting elements, a light source that forms exposure light by superimposing light generated from the plurality of semiconductor light emitting elements, and exposure from the light source. An irradiation device for irradiating light onto a substrate supported by the chuck; and a moving means for relatively moving the chuck and the irradiation device. The moving device moves the chuck and the irradiation device relative to each other. An exposure apparatus that exposes a substrate with irradiated exposure light, the intensity detecting means for detecting the intensity of the exposure light irradiated from the irradiation apparatus, and the plurality of temperature detections for detecting the temperatures of a plurality of semiconductor light emitting elements of the light source Means and when the substrate is not exposed, without supplying drive current to the plurality of semiconductor light emitting elements of the light source, each semiconductor light emitting element is turned off, and the plurality of semiconductors of the light source is exposed while the substrate is exposed A driving current is supplied to the optical element to turn on each semiconductor light emitting element, and based on the detection results of the plurality of temperature detecting means, the driving current of the semiconductor light emitting element having a temperature lower than a predetermined temperature or a predetermined temperature range is set to a predetermined temperature or And a control unit that compensates for a change in the intensity of the exposure light detected by the intensity detection unit by making it larger than the drive current of the semiconductor light emitting element having a temperature higher than the predetermined temperature range.

  In addition, the exposure method of the present invention includes a light source having a plurality of semiconductor light emitting elements, which supports a substrate with a chuck, and forms exposure light by superimposing light generated from the plurality of semiconductor light emitting elements. Is an exposure method in which the substrate is exposed to the exposure light irradiated from the irradiation device, and the substrate is not exposed. At this time, without supplying driving current to the plurality of semiconductor light emitting elements of the light source, each semiconductor light emitting element is turned off, and during the exposure of the substrate, the driving current is supplied to the plurality of semiconductor light emitting elements of the light source. The light emitting element is turned on, the intensity of exposure light emitted from the irradiation device is detected, the temperature of each semiconductor light emitting element is detected, and a predetermined temperature or a predetermined temperature range is determined based on the temperature detection result of each semiconductor light emitting element. The drive current of the low temperature of the semiconductor light emitting element Ri are those made larger than the driving current of the semiconductor light-emitting device of a temperature higher than the predetermined temperature or predetermined temperature range, compensate for the change in the intensity of the detected exposure light.

  Alternatively, the exposure apparatus of the present invention includes a chuck that supports a substrate, a plurality of semiconductor light emitting elements, a light source that forms exposure light by superimposing light generated from the plurality of semiconductor light emitting elements, and exposure from the light source. An irradiation device for irradiating light onto a substrate supported by the chuck; and a moving means for relatively moving the chuck and the irradiation device. The moving device moves the chuck and the irradiation device relative to each other. An exposure apparatus that exposes a substrate with irradiated exposure light, the intensity detecting means for detecting the intensity of the exposure light irradiated from the irradiation apparatus, and the plurality of temperature detections for detecting the temperatures of a plurality of semiconductor light emitting elements of the light source Means and when the substrate is not exposed, without supplying drive current to the plurality of semiconductor light emitting elements of the light source, each semiconductor light emitting element is turned off, and the plurality of semiconductors of the light source is exposed while the substrate is exposed A driving current is supplied to the optical element to turn on each semiconductor light emitting element, and based on the detection result of the intensity detecting means, the driving current supplied to each semiconductor light emitting element is adjusted to adjust the exposure light irradiated from the irradiation apparatus. When the temperature difference between the semiconductor light emitting elements exceeds the allowable range based on the detection results of the plurality of temperature detecting means while keeping the intensity within the predetermined range, the driving current of the semiconductor light emitting element at the highest temperature is reduced, and the minimum And a control means for increasing the driving current of the semiconductor light emitting element at the temperature.

  In addition, the exposure method of the present invention includes a light source having a plurality of semiconductor light emitting elements, which supports a substrate with a chuck, and forms exposure light by superimposing light generated from the plurality of semiconductor light emitting elements. Is an exposure method in which the substrate is exposed to the exposure light irradiated from the irradiation device, and the substrate is not exposed. At this time, without supplying driving current to the plurality of semiconductor light emitting elements of the light source, each semiconductor light emitting element is turned off, and during the exposure of the substrate, the driving current is supplied to the plurality of semiconductor light emitting elements of the light source. The light emitting element is turned on, the intensity of exposure light emitted from the irradiation device is detected, the temperature of each semiconductor light emitting element is detected, and the drive current supplied to each semiconductor light emitting element based on the detection result of the intensity of exposure light When adjusting, based on the detection result of the temperature of each semiconductor light emitting element, while maintaining the intensity of exposure light irradiated from the irradiation device within a predetermined range, when the temperature difference between each semiconductor light emitting element exceeds the allowable range, The drive current of the semiconductor light emitting element having the highest temperature is reduced and the drive current of the semiconductor light emitting element having the lowest temperature is increased.

  A lamp in which a high-pressure gas such as a mercury lamp is enclosed in a bulb requires several hours from the start of lighting until the illuminance stabilizes. Therefore, in the conventional proximity exposure apparatus, the lamp is always turned on while the apparatus is in operation, and when the substrate is not exposed due to loading / unloading of the substrate, movement of the substrate, etc., the exposure light is blocked by the shutter. It was. Accordingly, there are problems that the life of the lamp is exhausted quickly and wasteful power consumption is required. On the other hand, when a plurality of semiconductor light emitting elements are used as a light source for generating exposure light, the semiconductor light emitting elements can obtain a desired light quantity immediately after starting lighting, so that the substrate can be carried in and out, the substrate can be moved, etc. When the substrate is not exposed to light, turning off each semiconductor light emitting element extends the life of each semiconductor light emitting element compared to turning on each semiconductor light emitting element even when the substrate is not exposed. In addition, power consumption is reduced.

  The lifetime of the semiconductor light emitting element varies greatly depending on the temperature at the time of lighting, and the lifetime is shortened if lighting is continued at a high temperature. The temperature of the semiconductor light emitting element depends on its output, and rises as the time for which lighting continues continues and as the drive current increases. While the exposure of the substrate is performed, the intensity of the exposure light irradiated from the irradiation device is detected, and the temperature of each semiconductor light emitting element is detected. Based on the detection result of the temperature of each semiconductor light emitting element, the lighting time of the semiconductor light emitting element having a temperature lower than the predetermined temperature or the predetermined temperature range is longer than the lighting time of the semiconductor light emitting element having a temperature higher than the predetermined temperature or the predetermined temperature range. Alternatively, the driving current of the semiconductor light emitting element having a predetermined temperature or a temperature lower than the predetermined temperature range is set larger than the driving current of the semiconductor light emitting element having a temperature higher than the predetermined temperature or the predetermined temperature range, and the detected light intensity is increased. Make up for change. Alternatively, the temperature of each semiconductor light emitting element is adjusted while adjusting the drive current supplied to each semiconductor light emitting element based on the detection result of the intensity of exposure light to keep the intensity of exposure light irradiated from the irradiation apparatus within a predetermined range. Based on the detection result, when the temperature difference between the semiconductor light emitting elements exceeds the allowable range, the driving current of the semiconductor light emitting element having the highest temperature is decreased and the driving current of the semiconductor light emitting element having the lowest temperature is increased. The semiconductor light-emitting element that has been lit at a low temperature has a life shortened by the corresponding increase in temperature, and has the same life as a semiconductor light-emitting element that has been lit at a high temperature. Accordingly, when forming exposure light using a plurality of semiconductor light emitting elements, the lifetime of each semiconductor light emitting element is made uniform while keeping the intensity of the exposure light constant.

  Furthermore, in the exposure apparatus of the present invention, the intensity detection means includes an illuminance sensor, and measures the illuminance of the exposure light emitted from the irradiation apparatus by the illuminance sensor to detect the intensity of the exposure light. Moreover, the exposure method of this invention measures the illumination intensity of the exposure light irradiated from an irradiation apparatus with an illumination intensity sensor, and detects the intensity | strength of exposure light. The intensity of exposure light is easily detected using an illuminance sensor.

  The method for producing a display panel substrate according to the present invention involves exposing the substrate using any one of the above exposure apparatuses, or exposing the substrate using any one of the above exposure methods. Since the lifetime of each semiconductor light emitting element is made uniform, a plurality of semiconductor light emitting elements can be exchanged together without waste, the interruption of the exposure process can be reduced, and the productivity of the display panel substrate can be improved.

  According to the exposure apparatus and the exposure method of the present invention, when the substrate is not exposed, each semiconductor light emitting element is turned off without supplying a driving current to the plurality of semiconductor light emitting elements of the light source. Can extend the life of the battery and reduce power consumption. Then, during the exposure of the substrate, the intensity of the exposure light irradiated from the irradiation device is detected, the temperature of each semiconductor light emitting element is detected, and based on the detection result of the temperature of each semiconductor light emitting element, a predetermined temperature or The lighting time of the semiconductor light emitting element having a temperature lower than the predetermined temperature range is longer than the lighting time of the semiconductor light emitting element having a temperature higher than the predetermined temperature or the predetermined temperature range, or the semiconductor light emitting element having a temperature lower than the predetermined temperature or the predetermined temperature range. The drive current is made larger than the drive current of the semiconductor light emitting element at a predetermined temperature or a temperature higher than the predetermined temperature range to compensate for the change in the intensity of the detected exposure light, or based on the detection result of the intensity of the exposure light, By adjusting the drive current supplied to the semiconductor light-emitting element and keeping the intensity of exposure light emitted from the irradiation device within a predetermined range, the detection result of the temperature of each semiconductor light-emitting element Therefore, when the temperature difference between the semiconductor light emitting elements exceeds the allowable range, the drive current of the semiconductor light emitting element at the highest temperature is reduced, and the drive current of the semiconductor light emitting element at the lowest temperature is increased, so that a plurality of semiconductor light emitting elements are emitted. When forming exposure light using an element, the lifetime of each semiconductor light emitting element can be made uniform while keeping the intensity of exposure light constant.

  Furthermore, according to the exposure apparatus and the exposure method of the present invention, the intensity of exposure light can be easily detected using an illuminance sensor.

  According to the method for manufacturing a display panel substrate of the present invention, the lifetime of each semiconductor light emitting device can be made uniform, so that replacement of a plurality of semiconductor light emitting devices can be performed without waste, and interruption of exposure processing can be reduced. Thus, the productivity of the display panel substrate can be improved.

1 is a diagram showing a schematic configuration of an exposure apparatus according to an embodiment of the present invention. It is a figure which shows an example of a light source unit. It is the figure which looked at the semiconductor light-emitting device and the magnifying lens from the front. It is a figure explaining the exposure method by one embodiment of this invention. It is a figure explaining the exposure method by one embodiment of this invention. It is a figure explaining the exposure method by one embodiment of this invention. It is a figure which shows the other example of a light source unit. It is a figure which shows an example of the relationship between the drive current and light quantity of a semiconductor light-emitting device. It is a figure explaining the exposure method by other embodiment of this invention. It is a flowchart which shows the exposure method by further another embodiment of this invention. It is a flowchart which shows an example of the manufacturing process of the TFT substrate of a liquid crystal display device. It is a flowchart which shows an example of the manufacturing process of the color filter board | substrate of a liquid crystal display device.

  FIG. 1 is a view showing the schematic arrangement of an exposure apparatus according to an embodiment of the present invention. This embodiment shows an example of a proximity exposure apparatus that exposes a substrate using a proximity method. The proximity exposure apparatus includes a base 3, an X guide 4, an X stage 5, a Y guide 6, a Y stage 7, a θ stage 8, a chuck support 9, a chuck 10, a mask holder 20, and an exposure light irradiation device 30. It is configured. In addition to these, the proximity exposure apparatus includes a substrate transfer robot that loads the substrate 1 into the chuck 10 and unloads the substrate 1 from the chuck 10, a temperature control unit that performs temperature management in the apparatus, and the like.

  Note that the XY directions in the embodiments described below are examples, and the X direction and the Y direction may be interchanged.

  In FIG. 1, the chuck 10 is at an exposure position where the substrate 1 is exposed. A mask holder 20 for holding the mask 2 is installed above the exposure position. The mask holder 20 is provided with an opening through which exposure light passes. The mask holder 20 holds the peripheral portion of the mask 2 by vacuum suction using suction grooves provided around the opening. An exposure light irradiation device 30 is disposed above the mask 2 held by the mask holder 20. At the time of exposure, exposure light from the exposure light irradiation device 30 passes through the mask 2 and is irradiated onto the substrate 1, whereby the pattern of the mask 2 is transferred to the surface of the substrate 1 and a pattern is formed on the substrate 1. .

  The chuck 10 is moved to the load / unload position away from the exposure position by the X stage 5 and the Y stage 7. At the load / unload position, the substrate 1 is carried into the chuck 10 and the substrate 1 is carried out of the chuck 10 by a substrate transfer robot (not shown). The loading of the substrate 1 onto the chuck 10 and the unloading of the substrate 1 from the chuck 10 are performed using a plurality of push-up pins provided on the chuck 10. The push-up pin is housed inside the chuck 10 and is lifted from the inside of the chuck 10 to receive the substrate 1 from the substrate transfer robot and unload the substrate 1 from the chuck 10 when loading the substrate 1 onto the chuck 10. In doing so, the substrate 1 is delivered to the substrate transfer robot.

  The chuck 10 is mounted on the θ stage 8 via the chuck support 9, and a Y stage 7 and an X stage 5 are provided below the θ stage 8. The X stage 5 is mounted on an X guide 4 provided on the base 3 and moves along the X guide 4 in the X direction (the horizontal direction in FIG. 1). The Y stage 7 is mounted on a Y guide 6 provided on the X stage 5 and moves along the Y guide 6 in the Y direction (the depth direction in FIG. 1). The θ stage 8 is mounted on the Y stage 7 and rotates in the θ direction. The chuck support 9 is mounted on the θ stage 8 and supports the chuck 10 at a plurality of locations.

  The chuck 10 is moved between the load / unload position and the exposure position by the movement of the X stage 5 in the X direction and the movement of the Y stage 7 in the Y direction. At the load / unload position, the substrate 1 mounted on the chuck 10 is pre-aligned by moving the X stage 5 in the X direction, moving the Y stage 7 in the Y direction, and rotating the θ stage 8 in the θ direction. Is done. At the exposure position, the X stage 5 is moved in the X direction and the Y stage 7 is moved in the Y direction, whereby the substrate 1 mounted on the chuck 10 is stepped in the XY direction. Further, the gap between the mask 2 and the substrate 1 is adjusted by moving and tilting the mask holder 20 in the Z direction (the vertical direction in FIG. 1) by a Z-tilt mechanism (not shown). Then, the substrate 1 is aligned by the movement of the X stage 5 in the X direction, the movement of the Y stage 7 in the Y direction, and the rotation of the θ stage 8 in the θ direction.

  In the present embodiment, the gap between the mask 2 and the substrate 1 is adjusted by moving and tilting the mask holder 20 in the Z direction. However, the chuck support base 9 is provided with a Z-tilt mechanism, The gap between the mask 2 and the substrate 1 may be adjusted by moving and tilting the chuck 10 in the Z direction.

  The exposure light irradiation device 30 includes a collimation lens group 32, a plane mirror 33, an illuminance sensor 35, and a light source unit 40. The light source unit 40 described later generates exposure light when the substrate 1 is exposed, and does not generate exposure light when the substrate 1 is not exposed. The exposure light generated from the light source unit 40 passes through the collimation lens group 32 to become a parallel light beam, is reflected by the plane mirror 33, and is applied to the mask 2. The pattern of the mask 2 is transferred to the substrate 1 by the exposure light applied to the mask 2, and the substrate 1 is exposed.

  An illuminance sensor 35 is disposed in the vicinity of the back side of the plane mirror 33. The plane mirror 33 is provided with a small opening that allows a part of the exposure light to pass therethrough. The illuminance sensor 35 receives light that has passed through the opening of the plane mirror 33, measures the illuminance of the exposure light irradiated from the exposure light irradiation device 30 to the substrate 1 via the mask 2, and detects the intensity of the exposure light. . The measurement result of the illuminance sensor 35 is input to the light source unit 40.

  FIG. 2 is a diagram illustrating an example of a light source unit. The light source unit 40 includes a base substrate 41, a semiconductor light emitting element 42, a magnifying lens 43, a condenser lens 44, a lens group 45, a control circuit 46, a cooling member 47, a cooling device 48, and a temperature sensor 50. . A plurality of semiconductor light emitting elements 42 are mounted on the base substrate 41. The base substrate 41 drives each semiconductor light emitting element 42 under the control of the control circuit 46. Each semiconductor light emitting element 42 is formed of a light emitting diode, a laser diode, or the like, and generates light that forms exposure light. A temperature sensor 50 for measuring the temperature of each semiconductor light emitting element 42 is attached to each semiconductor light emitting element 42. Based on the measurement results of the illuminance sensor 35 and the temperature sensor 50, the control circuit 46 supplies the drive current of each semiconductor light emitting element 42 to the base substrate 41 and controls the driving of each semiconductor light emitting element 42.

  In FIG. 2, 13 semiconductor light emitting elements 42 are shown, but several hundred to several thousand semiconductor light emitting elements are used in an actual light source unit.

  A magnifying lens 43 is provided corresponding to each semiconductor light emitting element 42, and each magnifying lens 43 magnifies the light generated from each semiconductor light emitting element 42 and irradiates the condensing lens 44. The condensing lens 44 condenses the light magnified by each magnifying lens 43 and irradiates the lens group 45. The lens group 45 includes a fly-eye lens or a rod lens, and uniformizes the illuminance distribution of the exposure light on the exposure light irradiation surface. The light generated from each semiconductor light emitting element 42 is superposed by the action of each magnifying lens 43, condenser lens 44, and lens group 45 to form exposure light.

  In the example shown in FIG. 2, the base substrate 41 is configured to have a shape obtained by cutting off a part of the spherical surface. Then, each semiconductor light emitting element 42 is arranged on the base substrate 41 so that light generated from each semiconductor light emitting element 42 is irradiated to the lens group 45 through each magnifying lens 43 and condenser lens 44. Yes. A cooling member 47 is attached to the back surface of the base substrate 41. The cooling member 47 has a cooling water passage through which the cooling water flows, and cools each semiconductor light emitting element 42 by the cooling water supplied from the cooling device 48 to the cooling water passage. The cooling member 47 and the cooling device 48 are not limited to this, and may be an air cooling type including a heat radiating plate and a cooling fan. In the example shown in FIG. 2, the cooling member 47 is configured to have a shape obtained by cutting out a part of the spherical surface in accordance with the shape of the base substrate 41.

  FIG. 3 is a front view of the semiconductor light emitting element and the magnifying lens. It is desirable that the magnifying lens 43 be arranged with as little gap as possible so that many magnifying lenses 43 can be arranged in the same space. Further, in the present embodiment, the semiconductor light emitting element 42 is configured as a regular hexagon, but the shape of the semiconductor light emitting element 42 is not limited to this, and may be configured as a polygon or a circle having more corners. The closer the shape of the semiconductor light emitting element 42 is to the shape of the magnifying lens 43, the more effectively the light receiving surface of the magnifying lens 43 can be used.

  4 to 6 are views for explaining an exposure method according to an embodiment of the present invention. In FIG. 2, when the chuck 46 moves the chuck 10 between the load / unload position and the exposure position, the substrate 1 is loaded and unloaded at the load / unload position, the substrate 1 is loaded and unloaded, and When pre-alignment of the substrate 1 is performed, the exposure of the substrate 1 is performed as in the step movement of the substrate 1 in the X and Y directions at the exposure position, the gap alignment between the mask 2 and the substrate 1, the alignment of the substrate 1, and the like. When not performed, each semiconductor light emitting element 42 is turned off without supplying the drive current of each semiconductor light emitting element 42 to the base substrate 41. When the substrate 1 is not exposed, each semiconductor light emitting element 42 is turned off without supplying a driving current to the plurality of semiconductor light emitting elements 42 of the light source unit 40, so that each semiconductor is also exposed when the substrate 1 is not exposed. Compared with the case where the light emitting element 42 is turned on, the lifetime of each semiconductor light emitting element 42 is extended and the power consumption is suppressed.

  Then, while the substrate 1 is exposed, the control device 46 supplies the drive current of each semiconductor light emitting element 42 to the base substrate 41 to light up each semiconductor light emitting element 42. In the present embodiment, the control circuit 46 intermittently lights each semiconductor light emitting element 42 to adjust the illuminance of the exposure light, and a timing at which some of the plurality of semiconductor light emitting elements differ from other semiconductor light emitting elements. Is to light up.

  4 to 6, the control circuit 46 reduces the illuminance of exposure light to all the semiconductor light emitting elements by reducing the number of semiconductor light emitting elements to be turned on simultaneously among the plurality of semiconductor light emitting elements 42 to two thirds of the total. The case where it adjusts to 2/3 when turning on 42 is shown. In this case, the control circuit 46 divides each semiconductor light emitting element 42 into three groups denoted by reference signs A, B, and C in FIG. 4A shows the on / off state of the group of semiconductor light emitting elements 42 labeled A in FIG. 3, and FIG. 4B shows the group of semiconductor light emitting elements 42 labeled B in FIG. FIG. 4C shows the on / off state of the semiconductor light emitting elements 42 of the group denoted by C in FIG. As shown in FIGS. 4A, 4B, and 4C, the control circuit 46 keeps the illuminance of the exposure light constant while changing the semiconductor light emitting element to be turned off over time.

  While each semiconductor light emitting element 42 is cooled, each semiconductor light emitting element 42 is intermittently turned on to adjust the illuminance of the exposure light, so that each semiconductor light emitting element 42 is a cooling member as compared with the case where the semiconductor light emitting elements 42 are continuously turned on. The temperature is lowered by 47 and cooling is performed efficiently. Since some of the plurality of semiconductor light emitting elements are lit at different timings from other semiconductor light emitting elements, the illuminance of the exposure light does not change intermittently and rapidly.

  In FIG. 1, when the intensity of the exposure light irradiated from the exposure light irradiation device 30 to the substrate 1 through the mask 2 changes, the measurement result of the illuminance sensor 35 changes. Therefore, a change in the intensity of the exposure light can be easily detected using the illuminance sensor 35. In FIG. 2, when the measurement result of the illuminance sensor 35 changes, the control circuit 46 is based on the temperature of each semiconductor light emitting element 42 measured by each temperature sensor 50, and a semiconductor having a temperature lower than a predetermined temperature or a predetermined temperature range. The lighting time of the light emitting element is set longer than the lighting time of the semiconductor light emitting element at a predetermined temperature or a temperature higher than the predetermined temperature range so that the measurement result of the illuminance sensor 35 is within a predetermined range (for example, a reference value ± several%). In addition, it compensates for changes in the intensity of exposure light.

  For example, when the illuminance of the exposure light measured by the illuminance sensor 35 falls below the lower limit value, the control circuit 46 first calculates the illuminance of the exposure light from the total number of semiconductor light emitting elements having a predetermined temperature or a temperature lower than the predetermined temperature range. An additional total lighting time required to be within the predetermined range is calculated. Next, the control circuit 46 adds an additional total for each group denoted by reference symbols A, B, and C in FIG. 3 according to the number of semiconductor light emitting elements having a predetermined temperature or a temperature lower than a predetermined temperature range in each group. Allocate lighting time to each group. Subsequently, the control circuit 46 determines, based on the additional lighting time allocated to each group and the number of semiconductor light emitting elements having a temperature lower than a predetermined temperature or a predetermined temperature range in each group, for each group. Calculate the additional lighting time. Then, for each group, the control circuit 46 turns on the semiconductor light emitting element having a temperature lower than the predetermined temperature or the predetermined temperature range in each group for the calculated lighting time.

  Conversely, when the illuminance of the exposure light measured by the illuminance sensor 35 rises above the upper limit value, the control circuit 46 first determines the illuminance of the exposure light from the total number of semiconductor light emitting elements having a predetermined temperature or a temperature higher than the predetermined temperature range. An additional total extinguishing time required to keep the value within a predetermined range is calculated. Next, the control circuit 46 adds an additional total according to the number of semiconductor light emitting elements having a predetermined temperature or a temperature higher than the predetermined temperature range in each group for each group denoted by reference symbols A, B, and C in FIG. Allocate the turn-off time to each group. Subsequently, for each group, the control circuit 46 calculates the semiconductor light emitting element from the additional turn-off time allocated to each group and the number of semiconductor light emitting elements having a temperature higher than a predetermined temperature or a predetermined temperature range in each group. Calculate the additional turn-off time. Then, for each group, the control circuit 46 turns off the semiconductor light emitting elements having a predetermined temperature or a temperature higher than the predetermined temperature range in each group for the calculated turn-off time.

  FIG. 5 shows an example in which the illuminance of the exposure light measured by the illuminance sensor 35 is lower than the lower limit value, and the number of semiconductor light emitting elements having a predetermined temperature or a temperature lower than the predetermined temperature range is the same in each group. is there. FIG. 5A shows the lighting / extinguishing state of the semiconductor light emitting elements at a predetermined temperature or a temperature lower than the predetermined temperature range among the semiconductor light emitting elements 42 of the group denoted by A in FIG. FIG. 5 shows the on / off state of the semiconductor light emitting elements at a predetermined temperature or a temperature lower than the predetermined temperature range, among the semiconductor light emitting elements 42 of the group denoted by B in FIG. 3, and FIG. Of the semiconductor light emitting elements 42 of the group denoted by reference symbol C, the semiconductor light emitting elements at a predetermined temperature or a temperature lower than a predetermined temperature range are turned on / off. In this example, since the number of semiconductor light emitting elements having a predetermined temperature or a temperature lower than a predetermined temperature range is the same for each group, the additional lighting time is the same for each group.

  FIG. 6 shows a group in which the illuminance of the exposure light measured by the illuminance sensor 35 is lower than the lower limit value and the number of semiconductor light emitting elements having a temperature lower than a predetermined temperature or a predetermined temperature range is indicated by a symbol A in FIG. FIG. 3 shows an example of a case in which the number is 2 for the group denoted by B and half for the group denoted by C in FIG. FIG. 6A shows the on / off state of the semiconductor light-emitting elements at a predetermined temperature or a temperature lower than the predetermined temperature range among the semiconductor light-emitting elements 42 of the group denoted by A in FIG. Fig. 6 shows the on / off state of the semiconductor light emitting elements at a predetermined temperature or a temperature lower than the predetermined temperature range among the semiconductor light emitting elements 42 of the group denoted by B in Fig. 3. Of the semiconductor light emitting elements 42 of the group denoted by reference symbol C, the semiconductor light emitting elements at a predetermined temperature or a temperature lower than a predetermined temperature range are turned on / off. In this example, the additional lighting time is half for the group labeled B in FIG. 3 and doubled for the group labeled C in FIG. 3 compared to the group labeled A in FIG. .

  In this way, for each group, an additional lighting time is determined according to the number of semiconductor light emitting elements having a predetermined temperature or a temperature lower than a predetermined temperature range in each group, or a predetermined temperature or a predetermined temperature range in each group. By determining the additional turn-off time according to the number of semiconductor light emitting elements having higher temperatures, the exposure light intensity can be kept constant and the pattern can be exposed uniformly.

  Next, another embodiment of the present invention will be described. FIG. 7 is a diagram illustrating another example of the light source unit. In the example shown in FIG. 7, the base substrate 41 is divided into a plurality of parts, and the temperature sensors 50 for measuring the temperatures of the respective semiconductor light emitting elements 42 are attached to the respective base substrates 41. On each base substrate 41, a plurality of semiconductor light emitting elements 42 are arranged in a plane. Each base substrate 41 is different so that light generated from a plurality of semiconductor light emitting elements 42 mounted on each base substrate 41 is irradiated to the lens group 45 via each magnifying lens 43 and condenser lens 44. Are arranged at different angles. By arranging each semiconductor light emitting element 42 on each base substrate 41 in a plane, the position of each semiconductor light emitting element 42 can be easily adjusted.

  A cooling member 47 is attached to the back surface of each base substrate 41. The cooling member 47 has a cooling water passage through which the cooling water flows, and cools each semiconductor light emitting element 42 by the cooling water supplied from the cooling device 48 to the cooling water passage. The cooling member 47 and the cooling device 48 are not limited to this, and may be an air cooling type including a heat radiating plate and a cooling fan. In the example shown in FIG. 7, the cooling member 47 is configured in a shape that matches the arrangement of the base substrates 41. Other components are the same as in the example shown in FIG.

  In the present embodiment, while the substrate is exposed, the control circuit 46 continuously lights each semiconductor light emitting element 42 and adjusts the drive current of each semiconductor light emitting element 42 to adjust the illuminance of the exposure light. To do. In FIG. 1, when the intensity of the exposure light irradiated from the exposure light irradiation device 30 to the substrate 1 through the mask 2 changes, the measurement result of the illuminance sensor 35 changes. Therefore, a change in the intensity of the exposure light can be easily detected using the illuminance sensor 35.

  In FIG. 7, when the measurement result of the illuminance sensor 35 changes, the control circuit 46 is based on the temperature of each semiconductor light emitting element 42 measured by each temperature sensor 50, and a semiconductor having a temperature lower than a predetermined temperature or a predetermined temperature range. The driving current of the light emitting element is set to be larger than the driving current of the semiconductor light emitting element at a predetermined temperature or a temperature higher than the predetermined temperature range so that the measurement result of the illuminance sensor 35 is within a predetermined range (for example, a reference value ± several%). In addition, it compensates for changes in the intensity of exposure light.

  FIG. 8 is a diagram illustrating an example of the relationship between the drive current and the light amount of the semiconductor light emitting element. The vertical axis in FIG. 8 indicates the amount of light generated from the semiconductor light emitting element 42 as a relative amount of light when the drive current is 500 mA. As shown in FIG. 8, the amount of light generated from the semiconductor light emitting element 42 increases substantially linearly according to the drive current.

  For example, when the illuminance of the exposure light measured by the illuminance sensor 35 falls below the lower limit value, the control circuit 46 determines the total number of semiconductor light emitting elements having a predetermined temperature or a temperature lower than the predetermined temperature range and the semiconductor light emission shown in FIG. From the relationship between the drive current of the element and the amount of light, the magnitude of the drive current of the semiconductor light-emitting element at a predetermined temperature or lower than the predetermined temperature range, which is necessary for setting the illuminance of the exposure light within the predetermined range, is calculated. Then, the control circuit 46 supplies a drive current having a calculated magnitude to the semiconductor light emitting element having a predetermined temperature or a temperature lower than the predetermined temperature range.

  Conversely, when the illuminance of the exposure light measured by the illuminance sensor 35 rises above the upper limit value, the control circuit 46 determines the total number of semiconductor light emitting elements having a predetermined temperature or a temperature higher than the predetermined temperature range, and the semiconductor shown in FIG. From the relationship between the driving current of the light emitting element and the amount of light, the magnitude of the driving current of the semiconductor light emitting element at a predetermined temperature or higher than the predetermined temperature range necessary for setting the illuminance of the exposure light within the predetermined range is calculated. Then, the control circuit 46 supplies a drive current having a calculated magnitude to the semiconductor light emitting element having a predetermined temperature or a temperature higher than the predetermined temperature range.

  FIG. 9 is a view for explaining an exposure method according to another embodiment of the present invention. FIG. 9 shows that the illuminance of the exposure light measured by the illuminance sensor 35 is lower than the lower limit value when a drive current of 500 mA is continuously supplied to each semiconductor light emitting element 42 for 5 seconds when the substrate 1 is exposed. It is an example when it falls. FIG. 9A shows a driving current of a semiconductor light emitting element having a predetermined temperature or a temperature higher than a predetermined temperature range, and FIG. 9B shows a driving current of a semiconductor light emitting element having a temperature lower than the predetermined temperature or the predetermined temperature range. Show. In this example, the drive current of the semiconductor light emitting element at a predetermined temperature or a temperature lower than a predetermined temperature range is increased from 500 mA to 520 mA.

  FIG. 10 is a flowchart showing an exposure method according to still another embodiment of the present invention. In the present embodiment, while the substrate is exposed, the control circuit 46 continuously lights each semiconductor light emitting element 42 and adjusts the drive current of each semiconductor light emitting element 42 to adjust the illuminance of the exposure light. To do. In FIG. 7, the control circuit 46 first supplies a drive current having a specified magnitude to each semiconductor light emitting element 42 to light each semiconductor light emitting element 42 (step 301). In FIG. 1, the illuminance sensor 35 measures the illuminance of the exposure light emitted from the exposure light irradiation device 30 (step 302). When the intensity of the exposure light irradiated from the exposure light irradiation device 30 to the substrate 1 through the mask 2 changes, the measurement result of the illuminance sensor 35 changes. Therefore, a change in the intensity of the exposure light can be easily detected using the illuminance sensor 35.

  In FIG. 10, the control circuit 46 determines whether or not the measurement result of the illuminance sensor 35 is within a predetermined range (for example, reference value ± several%) (step 303). If the measurement result of the illuminance sensor 35 is not within the predetermined range, the control circuit 46 performs the first drive current adjustment (step 304). In the first drive current adjustment, the control circuit 46 performs the second drive current adjustment for all the semiconductor light emitting elements 42 when the second drive current adjustment (step 307) described later has not been performed yet. Is applied to the semiconductor light emitting device 42 whose drive current has not been adjusted by the second drive current adjustment immediately before, from the relationship between the drive current and the light amount of the semiconductor light emitting device shown in FIG. The magnitude of the drive current of each semiconductor light emitting element required to make the illuminance within a predetermined range is calculated. Then, the control circuit 46 supplies a drive current having the calculated magnitude to each semiconductor light emitting element, and returns to Step 302. By steps 302 to 304, the intensity of the exposure light irradiated from the exposure light irradiation device 30 is kept within a predetermined range.

  In step 303, when the measurement result of the illuminance sensor 35 is within the predetermined range, each temperature sensor 50 in FIG. 7 measures the temperature of each semiconductor light emitting element 42 (step 305). The control circuit 46 determines from the measurement result of each temperature sensor 50 whether or not the temperature difference between the respective semiconductor light emitting elements 42 is within an allowable range (step 306). When the temperature difference between the semiconductor light emitting elements 42 exceeds the allowable range, the control circuit 46 performs the second drive current adjustment (step 307). In the second drive current adjustment, the control circuit 46 decreases the drive current of the semiconductor light emitting element having the highest temperature and increases the drive current of the semiconductor light emitting element having the lowest temperature. At this time, the control circuit 46 supplies the semiconductor light emitting element having the highest temperature and the lowest temperature so that the illuminance of the exposure light stays within a predetermined range based on the relationship between the drive current and the light amount of the semiconductor light emitting element shown in FIG. The driving current to be determined is determined.

  In the embodiment shown in FIG. 10, when one surface of the substrate is divided into a plurality of shots and exposed, steps 305 to 307 are performed for each shot, but step 305 is performed only for the first shot for each substrate. ~ 307 may be performed. The semiconductor light emitting device whose drive current has been reduced by the second drive current adjustment (step 307) has its output lowered and its temperature lowered, and the semiconductor light emitting device whose drive current has been increased has its output raised and its temperature raised. . Accordingly, the semiconductor light emitting elements having the highest temperature and the lowest temperature to be adjusted for the second drive current are not the same every time, and the steps 305 to 307 are performed for each shot or each substrate, so that each semiconductor light emitting element 42 is turned on. The temperature at the time is made uniform.

  In step 306, when the temperature difference between the semiconductor light emitting elements 42 is within the allowable range, the control circuit 46 determines whether or not a predetermined exposure time has elapsed (step 308). Returning to step 302, if it has elapsed, each semiconductor light emitting element 42 is turned off.

  The lifetime of the semiconductor light emitting element varies greatly depending on the temperature at the time of lighting, and the lifetime is shortened if lighting is continued at a high temperature. The temperature of the semiconductor light emitting element depends on its output, and rises as the time for which lighting continues continues and as the drive current increases. While the exposure of the substrate 1 is performed, the intensity of the exposure light irradiated from the exposure light irradiation device 30 is detected, the temperature of each semiconductor light emitting element 42 is detected, and based on the detection result of the temperature of each semiconductor light emitting element 42. The lighting time of a semiconductor light emitting element having a temperature lower than a predetermined temperature or a predetermined temperature range is longer than the lighting time of a semiconductor light emitting element having a temperature higher than the predetermined temperature or the predetermined temperature range, or a temperature lower than the predetermined temperature or the predetermined temperature range. The driving current of the semiconductor light emitting element is made larger than the driving current of the semiconductor light emitting element at a predetermined temperature or a temperature higher than the predetermined temperature range to compensate for the change in the intensity of the detected exposure light, or the detection result of the intensity of the exposure light And adjusting the drive current supplied to each semiconductor light emitting element 42 to maintain the intensity of the exposure light irradiated from the exposure light irradiation device 30 within a predetermined range, Based on the detection result of the temperature of the optical element 42, when the temperature difference between the semiconductor light emitting elements 42 exceeds an allowable range, the driving current of the semiconductor light emitting element having the highest temperature is reduced and the driving current of the semiconductor light emitting element having the lowest temperature is set. Therefore, the semiconductor light-emitting element that was lit at a low temperature has a shorter life due to the rise in temperature, and has the same life as a semiconductor light-emitting element that was lit at a high temperature. Become. Therefore, when forming exposure light using a plurality of semiconductor light emitting elements 42, the lifetime of each semiconductor light emitting element 42 is made uniform while keeping the intensity of the exposure light constant.

  According to the embodiment described above, when exposure of the substrate 1 is not performed, each semiconductor light emitting element 42 is turned off without supplying a driving current to the plurality of semiconductor light emitting elements 42 of the light source unit 40. The lifetime of the semiconductor light emitting device 42 can be extended and the power consumption can be suppressed. And while exposure of the board | substrate 1 is performed, while detecting the intensity | strength of the exposure light irradiated from the exposure light irradiation apparatus 30, while detecting the temperature of each semiconductor light-emitting device 42, the detection result of the temperature of each semiconductor light-emitting device 42 Based on the above, the lighting time of the semiconductor light emitting element having a temperature lower than the predetermined temperature or the predetermined temperature range is set longer than the lighting time of the semiconductor light emitting element having a temperature higher than the predetermined temperature or the predetermined temperature range, or from the predetermined temperature or the predetermined temperature range. The drive current of the semiconductor light emitting element at a low temperature is made larger than the drive current of the semiconductor light emitting element at a temperature higher than a predetermined temperature or a predetermined temperature range to compensate for the change in the intensity of the detected exposure light, or the intensity of the exposure light Based on the detection result, the drive current supplied to each semiconductor light emitting element is adjusted to keep the intensity of exposure light emitted from the irradiation device within a predetermined range, while maintaining the semiconductor light emitting element. Based on the temperature detection result, when the temperature difference between the semiconductor light emitting elements exceeds the allowable range, the driving current of the semiconductor light emitting element at the highest temperature is reduced and the driving current of the semiconductor light emitting element at the lowest temperature is increased. Thus, when forming the exposure light using the plurality of semiconductor light emitting elements 42, the lifetime of each semiconductor light emitting element 42 can be made uniform while keeping the intensity of the exposure light constant.

  The present invention can be applied not only to a proximity exposure apparatus but also to an exposure apparatus that irradiates a substrate coated with a photoresist with a light beam, scans the substrate with the light beam, and draws a pattern on the substrate. .

  Since the exposure of the substrate is performed using the exposure apparatus of the present invention, or the substrate is exposed using the exposure method of the present invention, the lifetime of each semiconductor light emitting element can be made uniform. The light emitting elements can be exchanged together without waste, and the interruption of the exposure process can be reduced to improve the productivity of the display panel substrate.

  For example, FIG. 11 is a flowchart showing an example of the manufacturing process of the TFT substrate of the liquid crystal display device. In the thin film formation step (step 101), a thin film such as a conductor film or an insulator film, which becomes a transparent electrode for driving liquid crystal, is formed on the substrate by sputtering, plasma chemical vapor deposition (CVD), or the like. In the resist coating process (step 102), a photosensitive resin material (photoresist) is applied by a roll coating method or the like to form a photoresist film on the thin film formed in the thin film forming process (step 101). In the exposure step (step 103), the mask pattern is transferred to the photoresist film using a proximity exposure apparatus, a projection exposure apparatus, or the like. In the development step (step 104), a developer is supplied onto the photoresist film by a shower development method or the like to remove unnecessary portions of the photoresist film. In the etching process (step 105), a portion of the thin film formed in the thin film formation process (step 101) that is not masked by the photoresist film is removed by wet etching. In the stripping step (step 106), the photoresist film that has finished the role of the mask in the etching step (step 105) is stripped with a stripping solution. Before or after each of these steps, a substrate cleaning / drying step is performed as necessary. These steps are repeated several times to form a TFT array on the substrate.

  FIG. 12 is a flowchart showing an example of the manufacturing process of the color filter substrate of the liquid crystal display device. In the black matrix forming step (step 201), a black matrix is formed on the substrate by processing such as resist coating, exposure, development, etching, and peeling. In the colored pattern forming step (step 202), a colored pattern is formed on the substrate by a dyeing method, a pigment dispersion method, a printing method, an electrodeposition method, or the like. This process is repeated for the R, G, and B coloring patterns. In the protective film forming step (step 203), a protective film is formed on the colored pattern, and in the transparent electrode film forming step (step 204), a transparent electrode film is formed on the protective film. Before, during or after each of these steps, a substrate cleaning / drying step is performed as necessary.

  In the TFT substrate manufacturing process shown in FIG. 11, in the exposure process (step 103), in the color filter substrate manufacturing process shown in FIG. 12, in the black matrix forming process (step 201) and the colored pattern forming process (step 202). In this exposure process, the exposure apparatus or the exposure method of the present invention can be applied.

DESCRIPTION OF SYMBOLS 1 Substrate 2 Mask 3 Base 4 X guide 5 X stage 6 Y guide 7 Y stage 8 θ stage 9 Chuck support 10 Chuck 20 Mask holder 30 Exposure light irradiation device 32 Collimation lens group 33 Plane mirror 35 Illuminance sensor 40 Light source unit 41 Base substrate 42 Semiconductor Light Emitting Element 43 Magnifying Lens 44 Condensing Lens 45 Lens Group 46 Control Circuit 47 Cooling Member 48 Cooling Device 50 Temperature Sensor

Claims (18)

A chuck for supporting the substrate;
A light source having a plurality of semiconductor light emitting elements and forming exposure light by superimposing light generated from the plurality of semiconductor light emitting elements;
An irradiation device for irradiating the substrate supported by the chuck with exposure light from the light source;
A moving means for relatively moving the chuck and the irradiation device;
An exposure apparatus that relatively moves the chuck and the irradiation apparatus by the moving means, and exposes the substrate by exposure light irradiated from the irradiation apparatus,
Intensity detecting means for detecting the intensity of exposure light irradiated from the irradiation device;
A plurality of temperature detecting means for detecting temperatures of a plurality of semiconductor light emitting elements of the light source;
When the substrate is not exposed, each semiconductor light emitting element is turned off without supplying a driving current to the plurality of semiconductor light emitting elements of the light source, and the plurality of semiconductor light emitting elements of the light source is supplied while the substrate is exposed. A drive current is supplied to light each semiconductor light emitting element intermittently, and based on the detection results of the plurality of temperature detecting means, the lighting time of the semiconductor light emitting element at a predetermined temperature or a temperature lower than a predetermined temperature range is set to a predetermined temperature. An exposure apparatus comprising: a control unit that compensates for a change in the intensity of exposure light detected by the intensity detection unit by extending the lighting time of the semiconductor light emitting element having a temperature higher than a predetermined temperature range.   2. The exposure according to claim 1, wherein the intensity detection unit includes an illuminance sensor, and detects the intensity of the exposure light by measuring the illuminance of the exposure light emitted from the irradiation device by the illuminance sensor. apparatus. Support the substrate with a chuck,
In a light source having a plurality of semiconductor light emitting elements, exposure light is formed by superimposing light generated from the plurality of semiconductor light emitting elements,
Relatively moving the chuck and the irradiation device for irradiating the substrate supported by the chuck with the exposure light from the light source;
An exposure method for exposing a substrate with exposure light irradiated from an irradiation apparatus,
When substrate exposure is not performed, each semiconductor light emitting element is turned off without supplying drive current to the plurality of semiconductor light emitting elements of the light source,
While exposure of the substrate is performed, a driving current is supplied to the plurality of semiconductor light emitting elements of the light source, each semiconductor light emitting element is intermittently turned on, and the intensity of exposure light irradiated from the irradiation apparatus is detected, and each The temperature of the semiconductor light emitting element is detected, and based on the detection result of the temperature of each semiconductor light emitting element, the lighting time of the semiconductor light emitting element having a temperature lower than the predetermined temperature or the predetermined temperature range is set to a semiconductor having a temperature higher than the predetermined temperature or the predetermined temperature range. An exposure method characterized by compensating for a change in the intensity of the detected exposure light by making it longer than the lighting time of the light emitting element.   The exposure method according to claim 3, wherein the intensity of the exposure light is detected by measuring the illuminance of the exposure light emitted from the irradiation device with an illuminance sensor. A chuck for supporting the substrate;
A light source having a plurality of semiconductor light emitting elements and forming exposure light by superimposing light generated from the plurality of semiconductor light emitting elements;
An irradiation device for irradiating the substrate supported by the chuck with exposure light from the light source;
A moving means for relatively moving the chuck and the irradiation device;
An exposure apparatus that relatively moves the chuck and the irradiation apparatus by the moving means, and exposes the substrate by exposure light irradiated from the irradiation apparatus,
Intensity detecting means for detecting the intensity of exposure light irradiated from the irradiation device;
A plurality of temperature detecting means for detecting temperatures of a plurality of semiconductor light emitting elements of the light source;
When the substrate is not exposed, each semiconductor light emitting element is turned off without supplying a driving current to the plurality of semiconductor light emitting elements of the light source, and the plurality of semiconductor light emitting elements of the light source is supplied while the substrate is exposed. A driving current is supplied to light each semiconductor light emitting element, and based on the detection results of the plurality of temperature detecting means, the driving current of the semiconductor light emitting element having a temperature lower than a predetermined temperature or a predetermined temperature range is set to a predetermined temperature or a predetermined temperature. An exposure apparatus comprising: a control unit that compensates for a change in the intensity of the exposure light detected by the intensity detection unit by making the drive current of the semiconductor light emitting element having a temperature higher than the range higher.   6. The exposure according to claim 5, wherein the intensity detection means includes an illuminance sensor, and the illuminance sensor measures the illuminance of the exposure light emitted from the irradiation device to detect the intensity of the exposure light. apparatus. Support the substrate with a chuck,
In a light source having a plurality of semiconductor light emitting elements, exposure light is formed by superimposing light generated from the plurality of semiconductor light emitting elements,
Relatively moving the chuck and the irradiation device for irradiating the substrate supported by the chuck with the exposure light from the light source;
An exposure method for exposing a substrate with exposure light irradiated from an irradiation apparatus,
When substrate exposure is not performed, each semiconductor light emitting element is turned off without supplying drive current to the plurality of semiconductor light emitting elements of the light source,
While exposure of the substrate is performed, a driving current is supplied to the plurality of semiconductor light emitting elements of the light source to turn on each semiconductor light emitting element and detect the intensity of exposure light emitted from the irradiation apparatus, and each semiconductor light emitting element Based on the temperature detection result of each semiconductor light emitting element, the driving current of the semiconductor light emitting element having a temperature lower than the predetermined temperature or the predetermined temperature range is determined based on the detection result of the temperature of each semiconductor light emitting element. An exposure method characterized in that the exposure current is made larger than the drive current to compensate for a change in the intensity of the detected exposure light.   The exposure method according to claim 7, wherein the intensity of the exposure light is detected by measuring the illuminance of the exposure light emitted from the irradiation device with an illuminance sensor. A chuck for supporting the substrate;
A light source having a plurality of semiconductor light emitting elements and forming exposure light by superimposing light generated from the plurality of semiconductor light emitting elements;
An irradiation device for irradiating the substrate supported by the chuck with exposure light from the light source;
A moving means for relatively moving the chuck and the irradiation device;
An exposure apparatus that relatively moves the chuck and the irradiation apparatus by the moving means, and exposes the substrate by exposure light irradiated from the irradiation apparatus,
Intensity detecting means for detecting the intensity of exposure light irradiated from the irradiation device;
A plurality of temperature detecting means for detecting temperatures of a plurality of semiconductor light emitting elements of the light source;
When the substrate is not exposed, each semiconductor light emitting element is turned off without supplying a driving current to the plurality of semiconductor light emitting elements of the light source, and the plurality of semiconductor light emitting elements of the light source is supplied while the substrate is exposed. Supplying a drive current to turn on each semiconductor light emitting element, and adjusting the drive current supplied to each semiconductor light emitting element based on the detection result of the intensity detecting means, thereby adjusting the intensity of exposure light emitted from the irradiation apparatus Is maintained within a predetermined range, based on the detection results of the plurality of temperature detecting means, when the temperature difference between the semiconductor light emitting elements exceeds the allowable range, the driving current of the semiconductor light emitting element at the highest temperature is reduced, and the lowest An exposure apparatus comprising: control means for increasing a driving current of the semiconductor light emitting element at a temperature.   The exposure according to claim 9, wherein the intensity detection unit includes an illuminance sensor, and detects the intensity of the exposure light by measuring the illuminance of the exposure light emitted from the irradiation device by the illuminance sensor. apparatus. Support the substrate with a chuck,
In a light source having a plurality of semiconductor light emitting elements, exposure light is formed by superimposing light generated from the plurality of semiconductor light emitting elements,
Relatively moving the chuck and the irradiation device for irradiating the substrate supported by the chuck with the exposure light from the light source;
An exposure method for exposing a substrate with exposure light irradiated from an irradiation apparatus,
When substrate exposure is not performed, each semiconductor light emitting element is turned off without supplying drive current to the plurality of semiconductor light emitting elements of the light source,
While exposure of the substrate is performed, a driving current is supplied to the plurality of semiconductor light emitting elements of the light source to turn on each semiconductor light emitting element and detect the intensity of exposure light emitted from the irradiation apparatus, and each semiconductor light emitting element Each semiconductor is detected while adjusting the drive current supplied to each semiconductor light emitting element based on the detection result of the intensity of exposure light and maintaining the intensity of exposure light irradiated from the irradiation device within a predetermined range. Based on the detection result of the temperature of the light emitting element, when the temperature difference between the semiconductor light emitting elements exceeds the allowable range, the driving current of the semiconductor light emitting element at the highest temperature is reduced and the driving current of the semiconductor light emitting element at the lowest temperature is increased. An exposure method characterized by:   The exposure method according to claim 11, wherein the intensity of the exposure light is detected by measuring the illuminance of the exposure light emitted from the irradiation device with an illuminance sensor.   A method for manufacturing a display panel substrate, wherein the substrate is exposed using the exposure apparatus according to claim 1.   A method for producing a display panel substrate, wherein the substrate is exposed using the exposure method according to claim 3.   A method for manufacturing a display panel substrate, wherein the substrate is exposed using the exposure apparatus according to claim 5.   A method for manufacturing a display panel substrate, wherein the substrate is exposed using the exposure method according to claim 7 or 8.   A method for manufacturing a display panel substrate, wherein the substrate is exposed using the exposure apparatus according to claim 9.   A method for manufacturing a display panel substrate, wherein the substrate is exposed using the exposure method according to claim 11.

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