JP5355261B2 - Proximity exposure apparatus, exposure light forming method for proximity exposure apparatus, and display panel substrate manufacturing method - Google Patents

Description

  The present invention relates to a proximity exposure apparatus and a proximity exposure apparatus using a plurality of semiconductor light emitting elements as a light source for generating exposure light and using a fly-eye lens as an optical integrator in manufacturing a display panel substrate such as a liquid crystal display device. The present invention relates to a method for forming exposure light and a method for manufacturing a display panel substrate using them.

  Manufacturing of TFT (Thin Film Transistor) substrates, color filter substrates, plasma display panel substrates, organic EL (Electroluminescence) display panel substrates, and the like of liquid crystal display devices used as display panels is performed using photolithography using an exposure apparatus. This is performed by forming a pattern on the substrate by a technique. As an exposure apparatus, a projection method in which a mask pattern is projected onto a substrate using a lens or a mirror, and a minute gap (proximity gap) is provided between the mask and the substrate to transfer the mask pattern to the substrate. There is a proximity method. The proximity method is inferior in pattern resolution performance to the projection method, but the configuration of the irradiation optical system is simple, the processing capability is high, and it is suitable for mass production.

  Conventionally, a lamp in which high pressure gas is enclosed in a bulb, such as a mercury lamp, a halogen lamp, or a xenon lamp, has been used as a light source for generating exposure light of a proximity exposure apparatus. These lamps have a short life and must be replaced after a predetermined usage time. For example, if the lamp has a lifetime of 750 hours and it is lit continuously, it needs to be replaced about once a month. When the lamp is replaced, the exposure process is interrupted, resulting in a decrease in productivity.

  On the other hand, Patent Document 1 discloses a technique of using a solid light source element such as a light emitting diode as a light source of exposure light in a projection type exposure apparatus. Semiconductor light-emitting elements such as light-emitting diodes have a lifetime of several thousand hours, which is longer than that of a lamp, and exposure processing is not interrupted. Therefore, improvement in productivity is expected.

JP 2006-332077 A

  When a plurality of semiconductor light emitting elements are used as a light source for generating exposure light, a fly-eye lens is used as an optical integrator as described in Patent Document 1. The fly-eye lens is a lens array in which a plurality of single lenses are arranged vertically and horizontally. FIG. 10 is a diagram for explaining the operation of the fly-eye lens. The light generated from the plurality of semiconductor light emitting elements 42 is magnified by the magnifying lens 43 and irradiated to the fly-eye lens 45. The fly-eye lens 45 projects and superimposes the light expanded by the plurality of magnifying lenses 43 on the same irradiation surface, and uniformizes the illuminance distribution. At this time, the light incident on the fly-eye lens 45 deviates from the irradiation surface of the fly-eye lens 45 when the incident angle β is larger than a predetermined angle.

  In recent years, as the size of the substrate is increased with the increase in the screen size of the display panel, a light source with higher illuminance has been required for the exposure light source. In proximity exposure equipment mainly used for exposure of large substrates, when using multiple semiconductor light emitting elements as a light source that generates exposure light, the output of the semiconductor light emitting elements is much smaller than conventional lamps, Several hundred to several thousand semiconductor light emitting elements must be used side by side. In that case, a part of the light generated from the outer semiconductor light emitting element and magnified by the magnifying lens has a larger incident angle to the fly-eye lens, and deviates from the irradiation surface of the fly-eye lens to form exposure light. There was a problem that it was not used.

  The problem of the present invention is that when light generated from a plurality of semiconductor light emitting elements and magnified by a magnifying lens is overlapped by a fly-eye lens, the light of each semiconductor light emitting element is efficiently used to generate exposure light with high illuminance. Is to form. Another object of the present invention is to improve the productivity of a display panel substrate.

  The proximity exposure apparatus of the present invention is provided corresponding to each semiconductor light emitting element, a plurality of semiconductor light emitting elements that generate light forming exposure light, a base substrate on which the plurality of semiconductor light emitting elements are mounted, and each semiconductor light emitting element. A plurality of magnifying lenses that magnify the light generated from the light emitting element and a fly-eye lens that is irradiated with the light magnified by the magnifying lenses, and the light magnified by the magnifying lenses is superimposed on the fly-eye lens A proximity exposure apparatus that forms exposure light together, comprising a reflective member provided surrounding an optical path from a plurality of magnifying lenses to a fly-eye lens, and a semiconductor light-emitting element mounted on an outer peripheral portion of a base substrate, and The magnifying lens corresponding to them has a fly-eye lens in which one end of the light generated from the semiconductor light emitting element and magnified by the corresponding magnifying lens is Light that is disposed so as to be incident on the fly-eye lens within a predetermined angle that does not deviate from the irradiation surface, and the reflecting member is generated from a semiconductor light emitting element mounted on the outer periphery of the base substrate and is expanded by a corresponding magnifying lens The other end of the lens is arranged so as to be reflected by the reflecting member and enter the fly-eye lens within a predetermined angle that does not deviate from the irradiation surface of the fly-eye lens.

  Further, the exposure light forming method of the proximity exposure apparatus of the present invention mounts a plurality of semiconductor light emitting elements on a base substrate, generates light for forming exposure light from each semiconductor light emitting element, and corresponds to each semiconductor light emitting element. A plurality of magnifying lenses are provided, the light generated from each semiconductor light emitting element is magnified by the corresponding magnifying lens, irradiated to the fly-eye lens, and the light magnified by the plurality of magnifying lenses is superimposed on the fly-eye lens. An exposure light forming method for a proximity exposure apparatus for forming exposure light, comprising: a semiconductor light-emitting element mounted on an outer peripheral portion of a base substrate by providing a reflecting member surrounding an optical path from a plurality of magnifying lenses to a fly-eye lens; One end of the light generated from the semiconductor light emitting element and magnified by the corresponding magnifying lens is irradiated with the fly-eye lens. The reflection member is disposed so as to be incident on the fly-eye lens within a predetermined angle that is not deviated from the other, and the other member of the light generated from the semiconductor light emitting element mounted on the outer peripheral portion of the base substrate and expanded by the corresponding magnifying lens is used. The end is reflected by the reflecting member and is arranged so as to enter the fly-eye lens within a predetermined angle that does not deviate from the irradiation surface of the fly-eye lens.

  Of the light generated from the semiconductor light emitting element mounted on the outer periphery of the base substrate and enlarged by the corresponding magnifying lens, the light is directly applied to the fly eye lens between the outer periphery of the fly eye lens and one end of the light. The incident light enters the fly-eye lens within a predetermined angle that does not deviate from the irradiation surface of the fly-eye lens, and is used for forming exposure light. The light generated from the semiconductor light emitting element and enlarged by the corresponding magnifying lens is not directly irradiated to the fly-eye lens between the outer periphery of the fly-eye lens and the other end of the light. And is incident on the fly-eye lens within a predetermined angle that does not deviate from the irradiation surface of the fly-eye lens, and is used for forming exposure light. Therefore, when the light generated from the plurality of semiconductor light emitting elements and magnified by the magnifying lens is superposed by the fly-eye lens, the light of each semiconductor light emitting element is efficiently used to form exposure light with high illuminance.

  Furthermore, in the proximity exposure apparatus of the present invention, the optical axis of the semiconductor light-emitting element mounted on the outermost periphery of the base substrate and the magnifying lens corresponding to them is arranged toward the outer periphery of the fly-eye lens, and the reflecting member is It is arranged substantially parallel to the optical axis. Further, in the exposure light forming method of the proximity exposure apparatus of the present invention, the optical axis of the semiconductor light emitting element mounted on the outermost periphery of the base substrate and the magnifying lens corresponding to them is arranged toward the outer periphery of the fly-eye lens, The reflecting member is disposed substantially parallel to the optical axis. Since the optical axis of the semiconductor light emitting element mounted on the outermost periphery of the base substrate and the magnifying lens corresponding thereto are arranged toward the outer periphery of the fly-eye lens, it is enlarged by the corresponding magnifying lens generated from the semiconductor light emitting element. The distance from the fly-eye lens to the semiconductor light-emitting element, which is necessary for making one end of the light incident on the fly-eye lens within a predetermined angle, is reduced.

  Further, in the proximity exposure apparatus of the present invention, the base substrate is configured by combining a plurality of flat substrates, and the plurality of magnifying lenses are configured in an array for each of the substrates. Further, the exposure light forming method of the proximity exposure apparatus of the present invention forms a base substrate by combining a plurality of flat substrates, and forms a plurality of magnifying lenses in an array for each substrate. The semiconductor light emitting element can be easily mounted on the base substrate, and the optical axis of the magnifying lens can be easily adjusted.

  The method for producing a display panel substrate of the present invention exposes the substrate using any one of the above-described proximity exposure apparatuses, or forms using the exposure light forming method of any one of the above-described proximity exposure apparatuses. The substrate is exposed by irradiating the substrate with the exposed exposure light through a mask. By using the above-described proximity exposure apparatus or the exposure light forming method of the proximity exposure apparatus, the illuminance of the exposure light is increased, the exposure time is shortened, and the life of the exposure light source is increased. Substrate productivity is improved.

  According to the proximity exposure apparatus and the exposure light forming method of the proximity exposure apparatus of the present invention, the semiconductor light emitting device is provided on the outer peripheral portion of the base substrate by providing the reflecting member so as to surround the optical path from the plurality of magnifying lenses to the fly-eye lens. The fly-eye lens within the predetermined angle where one end of the light generated from the semiconductor light-emitting element and magnified by the corresponding magnifier lens is not deviated from the irradiation surface of the fly-eye lens. The other end of the light generated from the semiconductor light emitting element mounted on the outer periphery of the base substrate and expanded by the corresponding magnifying lens is reflected by the reflecting member, A plurality of semiconductor light emitting elements are arranged so as to be incident on the fly eye lens within a predetermined angle that does not deviate from the irradiation surface of the fly eye lens. When superimposing the al generated light is magnified by the magnifying lens and fly's eye lens, the light of the semiconductor light-emitting elements efficiently utilized, it is possible to form a high exposure light illuminance.

  Further, according to the proximity exposure apparatus and the exposure light forming method of the proximity exposure apparatus of the present invention, the optical axis of the semiconductor light emitting element mounted on the outermost periphery of the base substrate and the magnifying lens corresponding to them is used for the fly-eye lens. By disposing toward the outer periphery and disposing the reflecting member substantially parallel to the optical axis, one end of the light generated from the semiconductor light emitting element and magnified by the corresponding magnifying lens is within a predetermined angle. Thus, the distance from the fly-eye lens to the semiconductor light-emitting element, which is necessary for entering the fly-eye lens, can be reduced.

  Furthermore, according to the proximity exposure apparatus and the exposure light forming method of the proximity exposure apparatus of the present invention, a plurality of flat substrates are combined to form a base substrate, and a plurality of magnifying lenses are configured in an array for each substrate. Thus, the semiconductor light emitting element can be easily mounted on the base substrate, and the optical axis of the magnifying lens can be easily adjusted.

  According to the method for manufacturing a display panel substrate of the present invention, the illuminance of the exposure light is increased, the exposure time is shortened, and the life of the light source of the exposure light is increased, thereby improving the productivity of the display panel substrate. be able to.

It is a figure which shows schematic structure of the proximity exposure apparatus by one embodiment of this invention. It is a figure which shows an example of a light source unit. It is a figure which shows the direction of the optical axis of the semiconductor light-emitting device of a light source unit shown in FIG. 2, and a magnifying lens. It is a figure which shows the other example of a light source unit. It is a figure which shows the direction of the optical axis of the semiconductor light-emitting device and magnifying lens of the light source unit shown in FIG. It is a figure explaining the exposure light formation method of the proximity exposure apparatus by one embodiment of this invention. It is a figure which shows the example which has arrange | positioned the optical axis of the semiconductor light-emitting element mounted in the outermost periphery of a base substrate, and the magnifying lens corresponding to them toward the inner side rather than the outer periphery of a fly-eye lens. It is a flowchart which shows an example of the manufacturing process of the TFT substrate of a liquid crystal display device. It is a flowchart which shows an example of the manufacturing process of the color filter board | substrate of a liquid crystal display device. It is a figure explaining operation | movement of a fly eye lens.

  FIG. 1 is a diagram showing a schematic configuration of a proximity exposure apparatus according to an embodiment of the present invention. The proximity exposure apparatus includes a base 3, an X guide 4, an X stage 5, a Y guide 6, a Y stage 7, a θ stage 8, a chuck support 9, a chuck 10, a mask holder 20, and an exposure light irradiation device 30. It is configured. In addition to these, the proximity exposure apparatus includes a substrate transfer robot that loads the substrate 1 into the chuck 10 and unloads the substrate 1 from the chuck 10, a temperature control unit that performs temperature management in the apparatus, and the like.

  Note that the XY directions in the embodiments described below are examples, and the X direction and the Y direction may be interchanged.

  In FIG. 1, the chuck 10 is at an exposure position where the substrate 1 is exposed. A mask holder 20 for holding the mask 2 is installed above the exposure position. The mask holder 20 holds the periphery of the mask 2 by vacuum suction. An exposure light irradiation device 30 is disposed above the mask 2 held by the mask holder 20. At the time of exposure, exposure light from the exposure light irradiation device 30 passes through the mask 2 and is irradiated onto the substrate 1, whereby the pattern of the mask 2 is transferred to the surface of the substrate 1 and a pattern is formed on the substrate 1. .

  The chuck 10 is moved to a load / unload position away from the exposure position by the X stage 5. At the load / unload position, the substrate 1 is carried into the chuck 10 and the substrate 1 is carried out of the chuck 10 by a substrate transfer robot (not shown). The loading of the substrate 1 onto the chuck 10 and the unloading of the substrate 1 from the chuck 10 are performed using a plurality of push-up pins provided on the chuck 10. The push-up pin is housed inside the chuck 10 and is lifted from the inside of the chuck 10 to receive the substrate 1 from the substrate transfer robot and unload the substrate 1 from the chuck 10 when loading the substrate 1 onto the chuck 10. In doing so, the substrate 1 is delivered to the substrate transfer robot.

  The chuck 10 is mounted on the θ stage 8 via the chuck support 9, and a Y stage 7 and an X stage 5 are provided below the θ stage 8. The X stage 5 is mounted on an X guide 4 provided on the base 3 and moves along the X guide 4 in the X direction (the horizontal direction in FIG. 1). The Y stage 7 is mounted on a Y guide 6 provided on the X stage 5 and moves along the Y guide 6 in the Y direction (the depth direction in FIG. 1). The θ stage 8 is mounted on the Y stage 7 and rotates in the θ direction. The chuck support 9 is mounted on the θ stage 8 and supports the chuck 10 at a plurality of locations.

  The chuck 10 is moved between the load / unload position and the exposure position by the movement of the X stage 5 in the X direction and the movement of the Y stage 7 in the Y direction. At the load / unload position, the substrate 1 mounted on the chuck 10 is pre-aligned by moving the X stage 5 in the X direction, moving the Y stage 7 in the Y direction, and rotating the θ stage 8 in the θ direction. Is done. At the exposure position, the X stage 5 is moved in the X direction and the Y stage 7 is moved in the Y direction, whereby the substrate 1 mounted on the chuck 10 is stepped in the XY direction. Then, the substrate 1 is aligned by the movement of the X stage 5 in the X direction, the movement of the Y stage 7 in the Y direction, and the rotation of the θ stage 8 in the θ direction. Further, the gap between the mask 2 and the substrate 1 is adjusted by moving and tilting the mask holder 20 in the Z direction (the vertical direction in FIG. 1) by a Z-tilt mechanism (not shown).

  In the present embodiment, the gap between the mask 2 and the substrate 1 is adjusted by moving and tilting the mask holder 20 in the Z direction. However, the chuck support base 9 is provided with a Z-tilt mechanism, The gap between the mask 2 and the substrate 1 may be adjusted by moving and tilting the chuck 10 in the Z direction.

  The exposure light irradiation device 30 includes a collimation lens group 32, a plane mirror 33, an illuminance sensor 35, and a light source unit 40. The light source unit 40 described later generates exposure light when the substrate 1 is exposed, and does not generate exposure light when the substrate 1 is not exposed. The exposure light generated from the light source unit 40 passes through the collimation lens group 32 to become a parallel light beam, is reflected by the plane mirror 33, and is applied to the mask 2. The pattern of the mask 2 is transferred to the substrate 1 by the exposure light applied to the mask 2, and the substrate 1 is exposed.

  An illuminance sensor 35 is disposed in the vicinity of the back side of the plane mirror 33. The plane mirror 33 is provided with a small opening that allows a part of the exposure light to pass therethrough. The illuminance sensor 35 receives the light that has passed through the opening of the plane mirror 33 and measures the illuminance of the exposure light. The measurement result of the illuminance sensor 35 is input to the light source unit 40.

  FIG. 2 is a diagram illustrating an example of a light source unit. The light source unit 40 includes a base substrate 41, a semiconductor light emitting element 42, a magnifying lens 43, a fly eye lens 45, a control circuit 46, a cooling member 47, a cooling device 48, and a mirror 50. A plurality of semiconductor light emitting elements 42 are mounted on the base substrate 41. The base substrate 41 drives each semiconductor light emitting element 42 under the control of the control circuit 46. Each semiconductor light emitting element 42 is formed of a light emitting diode, a laser diode, or the like, and generates light that forms exposure light. The control circuit 46 controls driving of each semiconductor light emitting element 42 based on the measurement result of the illuminance sensor 35.

  In FIG. 2, nine semiconductor light emitting elements 42 are shown, but several hundred to several thousand semiconductor light emitting elements are used in an actual light source unit.

  A magnifying lens 43 is provided corresponding to each semiconductor light emitting element 42, and each magnifying lens 43 magnifies the light generated from each semiconductor light emitting element 42 and irradiates the fly-eye lens 45. FIG. 3 is a diagram showing the direction of the optical axis of the semiconductor light emitting element and the magnifying lens of the light source unit shown in FIG. The arrows in FIG. 3A indicate the directions of the optical axes of the semiconductor light emitting element 42 and the magnifying lens 43 when the base substrate 41 is viewed from the side. 3B indicates the directions of the optical axes of the semiconductor light emitting element 42 and the magnifying lens 43 when the base substrate 41 is viewed from the front.

  As shown in FIG. 3B, the base substrate 41 is configured by combining a plurality of substrates 41a, 41b, and 41c. In this example, as shown in FIG. 3A, the substrates 41b arranged on the top and bottom and the left and right of the substrate 41a in the center have a shape obtained by cutting out a part of the side surface of the cylinder. The surface of the central substrate 41a has a shape in which the surfaces of the upper and lower substrates 41b and the surfaces of the left and right substrates 41b are combined. The substrate 41c is flat, and a plurality of semiconductor light emitting elements 42 are mounted obliquely via the heat conducting member 47a. The optical axes of the semiconductor light emitting elements 42 mounted on the substrates 41a and 41b and the magnifying lens 43 corresponding to them are arranged toward the center of the fly-eye lens 45 as shown in FIGS. 3 (a) and 3 (b). ing. The optical axes of the semiconductor light-emitting elements 42 mounted on the substrate 41c and the magnifying lenses 43 corresponding to them are arranged parallel to each other toward the fly-eye lens 45 as shown in FIGS. 3 (a) and 3 (b). Yes.

  FIG. 4 is a diagram illustrating another example of the light source unit. FIG. 5 is a diagram showing the directions of the optical axes of the semiconductor light emitting element and the magnifying lens of the light source unit shown in FIG. The arrows in FIG. 5A indicate the directions of the optical axes of the semiconductor light emitting element 42 and the magnifying lens 43 when the AA section of the base substrate 41 shown in FIG. 5B is viewed. 5B indicates the direction of the optical axis of the semiconductor light emitting element 42 and the magnifying lens 43 when the base substrate 41 is viewed from the front.

  In this example, the base substrate 41 is configured by combining a plurality of flat substrates 41a, 41b, and 41c. Substrates 41 b and 41 c located on the outer periphery of the base substrate 41 are installed inclined toward the fly-eye lens 45. The magnifying lens 43 is configured in an array for each of the substrates 41a, 41b, and 41c. As shown in FIGS. 5A and 5B, the optical axes of the semiconductor light emitting elements 42 mounted on the substrates 41a, 41b and 41c and the magnifying lenses 43 corresponding to them are mutually directed toward the fly-eye lens 45. They are arranged in parallel. A plurality of flat substrates 41a, 41b, and 41c are combined to form a base substrate 41, and a plurality of magnifying lenses 43 are formed in an array for each of the substrates 41a, 41b, and 41c. And the adjustment of the optical axis of the magnifying lens 43 is facilitated.

  2 and 4, a mirror 50 is provided so as to surround an optical path from the plurality of magnifying lenses 43 to the fly-eye lens 45. In the example shown in FIGS. 2 and 4, since the base substrate 41 and the fly-eye lens 45 are square and the base substrate 41 is larger than the fly-eye lens 45, the mirror 50 has a shape obtained by cutting out the upper part of the quadrangular pyramid. ing. The mirror 50 reflects a part of the light generated from the semiconductor light emitting element 42 mounted on the substrates 41 b and 41 c on the outer peripheral portion of the base substrate 41 and magnified by the corresponding magnifying lens 43 to the fly-eye lens 45. Irradiate.

  The fly-eye lens 45 superimposes the light enlarged by the plurality of magnifying lenses 43 to form exposure light having a uniform illuminance distribution. At this time, the fly-eye lens 45 combines the light directly incident from the magnifying lens 43 and the light reflected and incident by the mirror 50 to form exposure light. Light that has entered the fly-eye lens 45 from the magnifying lens 43 or the mirror 50 at an incident angle larger than the predetermined angle α deviates from the irradiation surface of the fly-eye lens 45 and is not used for forming exposure light.

  A cooling member 47 is attached to the back surface of the base substrate 41. The cooling member 47 has a cooling water passage through which the cooling water flows, and cools each semiconductor light emitting element 42 by the cooling water supplied from the cooling device 48 to the cooling water passage. The cooling member 47 and the cooling device 48 are not limited to this, and may be an air cooling type including a heat radiating plate and a cooling fan.

  Hereinafter, an exposure light forming method of a proximity exposure apparatus according to an embodiment of the present invention will be described. FIG. 6 is a view for explaining an exposure light forming method of the proximity exposure apparatus according to the embodiment of the present invention. In the present invention, as shown in FIG. 6, the semiconductor light emitting elements 42 mounted on the outer peripheral portion of the base substrate 41 and the magnifying lenses 43 corresponding thereto are enlarged by the corresponding magnifying lenses 43 generated from the semiconductor light emitting elements 42. One end of the emitted light is arranged so as to enter the fly-eye lens 45 within a predetermined angle α that does not deviate from the irradiation surface of the fly-eye lens 45. Then, the other end of the light generated from the semiconductor light emitting element 42 mounted on the outer peripheral portion of the base substrate 41 and expanded by the corresponding magnifying lens 43 is reflected by the mirror 50, and the fly-eye lens It is arranged so as to be incident on the fly-eye lens 45 within a predetermined angle α that does not deviate from the irradiation surface 45.

  Of the light generated from the semiconductor light emitting element 42 mounted on the outer periphery of the base substrate 41 and enlarged by the corresponding magnifying lens 43, the fly eye lens between the outer periphery of the fly eye lens 45 and one end of the light. The light directly irradiated on 45 enters the fly-eye lens 45 within a predetermined angle α that does not deviate from the irradiation surface of the fly-eye lens 45, and is used for forming exposure light. Of the light generated from the semiconductor light emitting element 42 and enlarged by the corresponding magnifying lens 43, the light that is not directly irradiated to the fly-eye lens 45 between the outer periphery of the fly-eye lens 45 and the other end of the light. Is reflected by the mirror 50 and enters the fly-eye lens 45 within a predetermined angle α that does not deviate from the irradiation surface of the fly-eye lens 45, and is used for forming exposure light. Therefore, when the light generated from the plurality of semiconductor light emitting elements 42 and magnified by the magnifying lens 43 is superposed on the fly-eye lens 45, the light of each semiconductor light emitting element 42 is used efficiently, and exposure light with high illuminance is emitted. It is formed.

  Furthermore, in the present embodiment, as shown in FIG. 6, the optical axis of the semiconductor light emitting element 42 mounted on the outermost periphery of the base substrate 41 and the magnifying lens 43 corresponding thereto are directed toward the outer periphery of the fly-eye lens 45. The mirror 50 is arranged substantially parallel to the optical axis.

  FIG. 7 is a diagram showing an example in which the optical axes of the semiconductor light emitting elements mounted on the outermost periphery of the base substrate and the magnifying lenses corresponding thereto are arranged inward from the outer periphery of the fly-eye lens. When the optical axis of the semiconductor light emitting element 42 mounted on the outermost periphery of the base substrate 41 and the magnifying lens 43 corresponding to the semiconductor light emitting element 42 are arranged inward from the outer periphery of the fly-eye lens 45, the semiconductor light emitting element 42 generates the light. In order to make one end of the light magnified by the corresponding magnifying lens 43 incident on the fly-eye lens 45 within a predetermined angle α, the distance from the fly-eye lens 45 to the semiconductor light emitting element 42 is increased. There is a need.

  In the embodiment shown in FIG. 6, the optical axis of the semiconductor light emitting element 42 mounted on the outermost periphery of the base substrate 41 and the magnifying lens 43 corresponding thereto are arranged toward the outer periphery of the fly-eye lens 45. Compared with the example shown in FIG. 7, one end of light generated from the semiconductor light emitting element 42 and enlarged by the corresponding magnifying lens 43 is required to enter the fly-eye lens 45 within a predetermined angle α. The distance from the fly-eye lens 45 to the semiconductor light emitting element 42 can be reduced.

  According to the embodiment described above, the mirror 50 is provided so as to surround the optical path from the plurality of magnifying lenses 43 to the fly-eye lens 45, and the semiconductor light emitting elements 42 mounted on the outer peripheral portion of the base substrate 41 and the magnifying devices corresponding thereto. One end of the light generated from the semiconductor light emitting element 42 and expanded by the corresponding magnifying lens 43 is moved to the fly-eye lens 45 within a predetermined angle α that does not deviate from the irradiation surface of the fly-eye lens 45. The other end of the light generated from the semiconductor light emitting element 42 mounted on the outer peripheral portion of the base substrate 41 and enlarged by the corresponding magnifying lens 43 is reflected by the mirror 50. By arranging so as to be incident on the fly-eye lens 45 within a predetermined angle α that does not deviate from the irradiation surface of the fly-eye lens 45, a plurality of When the light generated from the semiconductor light emitting element 42 and magnified by the magnifying lens 43 is superposed on the fly-eye lens 45, exposure light with high illuminance can be formed by efficiently using the light of each semiconductor light emitting element 42. it can.

  Further, the optical axes of the semiconductor light emitting elements 42 mounted on the outermost periphery of the base substrate 41 and the magnifying lenses 43 corresponding thereto are arranged toward the outer periphery of the fly-eye lens 45, and the mirror 50 is substantially parallel to the optical axis. , The one end of the light generated from the semiconductor light emitting element 42 and enlarged by the corresponding magnifying lens 43 is incident on the fly eye lens 45 within a predetermined angle α. The distance from the eye lens 45 to the semiconductor light emitting element 42 can be reduced.

  Further, according to the example shown in FIG. 4, a plurality of flat substrates 41a, 41b, and 41c are combined to form a base substrate 41, and a plurality of magnifying lenses are configured in an array for each of the substrates 41a, 41b, and 41c. Thus, the semiconductor light emitting element 42 can be easily mounted on the base substrate 41, and the optical axis of the magnifying lens 43 can be easily adjusted.

  The exposure is performed using the proximity exposure apparatus of the present invention, or the substrate is exposed by irradiating the substrate with exposure light formed using the exposure light forming method of the proximity exposure apparatus of the present invention through a mask. As a result, the illuminance of the exposure light is increased, the exposure time is shortened, and the life of the light source of the exposure light is increased, so that the productivity of the display panel substrate can be improved.

  For example, FIG. 8 is a flowchart showing an example of the manufacturing process of the TFT substrate of the liquid crystal display device. In the thin film formation step (step 101), a thin film such as a conductor film or an insulator film, which becomes a transparent electrode for driving liquid crystal, is formed on the substrate by sputtering, plasma chemical vapor deposition (CVD), or the like. In the resist coating process (step 102), a photosensitive resin material (photoresist) is applied by a roll coating method or the like to form a photoresist film on the thin film formed in the thin film forming process (step 101). In the exposure step (step 103), the mask pattern is transferred to the photoresist film using a proximity exposure apparatus, a projection exposure apparatus, or the like. In the development step (step 104), a developer is supplied onto the photoresist film by a shower development method or the like to remove unnecessary portions of the photoresist film. In the etching process (step 105), a portion of the thin film formed in the thin film formation process (step 101) that is not masked by the photoresist film is removed by wet etching. In the peeling step (step 106), the photoresist film that has finished the role of the mask in the etching step (step 105) is peeled off with a peeling solution. Before or after each of these steps, a substrate cleaning / drying step is performed as necessary. These steps are repeated several times to form a TFT array on the substrate.

  FIG. 9 is a flowchart showing an example of the manufacturing process of the color filter substrate of the liquid crystal display device. In the black matrix forming step (step 201), a black matrix is formed on the substrate by processing such as resist coating, exposure, development, etching, and peeling. In the colored pattern forming step (step 202), a colored pattern is formed on the substrate by a dyeing method, a pigment dispersion method, a printing method, an electrodeposition method, or the like. This process is repeated for the R, G, and B coloring patterns. In the protective film forming step (step 203), a protective film is formed on the colored pattern, and in the transparent electrode film forming step (step 204), a transparent electrode film is formed on the protective film. Before, during or after each of these steps, a substrate cleaning / drying step is performed as necessary.

  In the TFT substrate manufacturing process shown in FIG. 8, in the exposure process (step 103), in the color filter substrate manufacturing process shown in FIG. 9, in the black matrix forming process (step 201) and the colored pattern forming process (step 202). In this exposure process, the proximity exposure apparatus or the exposure light forming method of the proximity exposure apparatus of the present invention can be applied.

DESCRIPTION OF SYMBOLS 1 Substrate 2 Mask 3 Base 4 X guide 5 X stage 6 Y guide 7 Y stage 8 θ stage 9 Chuck support 10 Chuck 20 Mask holder 30 Exposure light irradiation device 32 Collimation lens group 33 Plane mirror 35 Illuminance sensor 40 Light source unit 41 Base substrate 41a, 41b, 41c Substrate 42 Semiconductor light emitting element 43 Magnifying lens 45 Fly eye lens 46 Control circuit 47 Cooling member 47a Thermal conduction member 48 Cooling device 50 Mirror

Claims (6)

A plurality of semiconductor light emitting elements that generate light that forms exposure light; and
A base substrate on which the plurality of semiconductor light emitting elements are mounted;
A plurality of magnifying lenses that are provided corresponding to each semiconductor light emitting element and that magnify light generated from each semiconductor light emitting element,
A fly-eye lens irradiated with light enlarged by the plurality of magnifying lenses,
A proximity exposure apparatus that forms exposure light by superimposing light expanded by the plurality of magnifying lenses on the fly-eye lens,
A reflective member provided around an optical path from the plurality of magnifying lenses to the fly-eye lens;
The semiconductor light emitting elements mounted on the outer periphery of the base substrate and the magnifying lenses corresponding thereto have one end of light generated from the semiconductor light emitting elements and enlarged by the corresponding magnifying lens, of the fly eye lens. Arranged to enter the fly-eye lens within a predetermined angle that does not deviate from the irradiation surface,
The reflection member is configured such that the other end of the light generated from the semiconductor light emitting element mounted on the outer peripheral portion of the base substrate and magnified by the corresponding magnification lens is reflected by the reflection member, and the fly-eye lens Arranged to enter the fly-eye lens within a predetermined angle that does not deviate from the irradiation surface , and
The semiconductor light emitting elements mounted on the outermost periphery of the base substrate and the magnifying lenses corresponding to them are arranged with the optical axis facing the outer periphery of the fly-eye lens,
The proximity exposure apparatus , wherein the reflecting member is disposed substantially parallel to the optical axis . The proximity exposure apparatus according to claim 1 , wherein the base substrate is configured by combining a plurality of flat substrates, and the plurality of magnifying lenses are configured in an array for each of the substrates. A plurality of semiconductor light emitting elements are mounted on a base substrate, and light forming exposure light is generated from each semiconductor light emitting element,
A plurality of magnifying lenses are provided corresponding to each semiconductor light emitting element, the light generated from each semiconductor light emitting element is magnified by the corresponding magnifying lens, and irradiated to the fly-eye lens,
An exposure light forming method of a proximity exposure apparatus that forms exposure light by overlapping light expanded by a plurality of magnifying lenses with a fly-eye lens,
A reflecting member is provided around the optical path from the plurality of magnifying lenses to the fly-eye lens,
One end of light generated from the semiconductor light emitting element and magnified by the corresponding magnifying lens from the semiconductor light emitting element mounted on the outer periphery of the base substrate and the corresponding magnifying lens from the irradiation surface of the fly-eye lens Place it so that it enters the fly-eye lens within a predetermined angle that does not come off,
The other end of the light generated from the semiconductor light emitting element mounted on the outer peripheral portion of the base substrate and enlarged by the corresponding magnifying lens is reflected by the reflecting member and deviates from the irradiation surface of the fly-eye lens. Arranged to enter the fly-eye lens within a predetermined angle , and
The optical axis of the semiconductor light emitting element mounted on the outermost periphery of the base substrate and the magnifying lens corresponding to them is arranged toward the outer periphery of the fly-eye lens,
An exposure light forming method for a proximity exposure apparatus , wherein a reflecting member is disposed substantially parallel to the optical axis . 4. The exposure light forming method for a proximity exposure apparatus according to claim 3 , wherein a plurality of flat substrates are combined to form a base substrate, and a plurality of magnifying lenses are formed in an array for each of the substrates. A method for manufacturing a display panel substrate, comprising: exposing a substrate using the proximity exposure apparatus according to claim 1 . 5. A display panel substrate, wherein the substrate is exposed by irradiating the substrate with exposure light formed using the exposure light forming method of the proximity exposure apparatus according to claim 3 or 4 through a mask. Manufacturing method.

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