TW201102767A - Proximity exposure device, its exposure beam forming method and manufacturing method of a display panel substrate - Google Patents

Proximity exposure device, its exposure beam forming method and manufacturing method of a display panel substrate Download PDF

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Publication number
TW201102767A
TW201102767A TW099121055A TW99121055A TW201102767A TW 201102767 A TW201102767 A TW 201102767A TW 099121055 A TW099121055 A TW 099121055A TW 99121055 A TW99121055 A TW 99121055A TW 201102767 A TW201102767 A TW 201102767A
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TW
Taiwan
Prior art keywords
semiconductor light
light
lens
fly
eye lens
Prior art date
Application number
TW099121055A
Other languages
Chinese (zh)
Other versions
TWI414903B (en
Inventor
Hidekazu Tezuka
Hideaki Doi
Ryouji Nemoto
Yasuhiro Yoshitake
Tatsuo Hariyama
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Hitachi High Tech Corp
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Publication of TW201102767A publication Critical patent/TW201102767A/en
Application granted granted Critical
Publication of TWI414903B publication Critical patent/TWI414903B/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G03F7/2006—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light using coherent light; using polarised light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0275—Photolithographic processes using lasers

Abstract

A semiconductor luminous element 42, carried on the outer circumference of a base substrate 51, and one amplification lens 43 corresponding to the semiconductor luminous element 42, are arranged so that one end of the light, which is generated from the semiconductor luminous element 42 and amplified by the corresponding amplification lens 43, is incident onto the fly-eye lens 45 within a specified angle that will not deviate from the illumination surface of the fly-eye lens 45. Then, the reflection member 50 is arranged so that the other end of the light, which is generated from the semiconductor luminous element 42, carried on the outer circumference of the base substrate 41, and amplified by the corresponding amplification lens 43, is reflected by the reflection member 50 and incident onto the fly-eye lens 45 within a specified angle that will not deviate from the illumination surface of the fly-eye lens 45.

Description

201102767 六、發明說明： 【發明所屬之技術領域】 本發明是有關於一種在液晶顯示器（display)裝置等 的顯示用面板（panel)基板的製造中，對於產生曝光光束 的光源使用多個半導體發光元件，並使用蠅眼透鏡（fly eye lens )作為光學積分器（optical integrator )的鄰近(proximity) 曝光裝置、鄰近曝光裝置的曝光光束形成方法、以及使用 這些裝置和方法的顯示用面板基板的製造方法。 【先前技術】 作為顯示用面板而使用的液晶顯示器裝置的薄膜電晶 體（Thin Film Transistor，TFT)基板或彩色濾光器（c〇1〇r filter)基板、電漿（plasma)顯示器面板用基板、有機電 致發光（Electroluminescence，EL)顯示面板用基板等的 製造是使用曝光裝置，通過微影（ph〇t〇lith〇gmphy)技術 在基板上形成圖案*進行。作為曝光裝置，有使用透鏡 〇ens)或鏡子來將光罩（mask)的圖案投影至基板上的投 影（projection)方式、以及在光罩與基板之間設置微小的 間隙（鄰近間隙，piOximity gap)而將光罩的圖案轉印至 f板的鄰近方式。鄰近方式與投影方式相比，圖案析象性 能較差，但照射光學系統的結構簡單，且處理能力， 適合於量產用途。 以往 子於鄰近曝光裝置的產生曝光光束的光源，使 用的是諸如衣燈、«燈（halogen lamp)、驗（xen〇n lamp)等-般將缝氣體（卿）封人到燈泡（祕）内的 201102767 A' 必 ΐ對較短，在超過規定的使用時間之後” 如果連續雜哪轉情況下， 更換曝光處理將中斷，因此生產性會降低。 曝光裝置中面使id二，示了-種在投影方式的BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light source for use in a display panel of a liquid crystal display device or the like, which uses a plurality of semiconductor light sources for a light source that generates an exposure beam. Component, and use of a fly eye lens as an optical integrator proximity exposure device, an exposure beam forming method adjacent to the exposure device, and a display panel substrate using the same method. [Prior Art] A Thin Film Transistor (TFT) substrate, a color filter (c〇1〇r filter) substrate, or a plasma display panel substrate for a liquid crystal display device used as a display panel The production of an organic electroluminescence (EL) display panel substrate or the like is performed by forming a pattern* on a substrate by a lithography technique using an exposure apparatus. As the exposure device, there is a projection method in which a pattern of a mask is projected onto a substrate using a lens or a mirror, and a small gap is provided between the mask and the substrate (adjacent gap, piOximity gap) And transferring the pattern of the reticle to the adjacent manner of the f-plate. Compared with the projection method, the adjacent image has poor pattern resolution, but the illumination optical system has a simple structure and processing capability, which is suitable for mass production. In the past, a light source that generates an exposure beam from a proximity exposure device is used to seal a gas (clear) to a bulb (secret) using, for example, a clothes lamp, a halogen lamp, a xen〇n lamp, or the like. The 201102767 A' must be shorter, after the specified usage time. If the continuous miscellaneous rotation, the replacement exposure processing will be interrupted, so the productivity will be reduced. The id 2 in the exposure device is shown - Projection

光元件的壽命與燈光二極體等的半導體發 .^^^ ^較長，達到數千小時，使曝光處理 中斷的^較少，因此，可期待生產性的提高。 [先則技術文獻] [專利文獻] [專利文獻1]日本專利特開2006 332077號公報 蛀於產生曝光光束的光源使用多個半導體發光元件 夺:專利文獻1所記餘’使㈣眼透絲作為光學積 分器。職透鏡是❹個單透鏡呈縱橫制而成的透鏡陣 歹J lens array)。® 10是說明繩眼透鏡的動作的圖。將從 多個半導體發光元件42產生的光通過放大透鏡43而分別 放大後照射綱眼魏45。舰透鏡45將經乡個放大透 鏡43放大後的光投影至相_照射面上而使所述光重 合，使照度分佈均勻化。此時，如果人射角度ρ大於規定 角度，則入射至繩眼透鏡45的光會偏離罐眼透 射面。 近年來，隨著顯示用面板的大晝面化，基板越是大型 化，對於曝光光束的光源，就越是要求使用照度更高的光 201102767 源°在主要用於大型基板的曝光的鄰近曝光裝置中，當使 用多個半導體發光元件作為產生曝光光束的光源時，半導 體發光元件的輸出遠小於以往的燈，因此，必須並排地使 用數百至數千個左右的半導體發光元件。此時存在下述問 題：從外側的半導體發光元件產生並經放大透鏡放大後的 光的一部分向蠅眼透鏡的入射角度變大而偏離蠅眼透鏡的 照射面’從而不被利用於曝光光束的形成。 【發明内容】 本發明的課題在於，在利用蠅眼透鏡來使從多個半導 體發光元件產生並經放大透鏡而放大後的光予以重合時， 效率良好地利用各半導體發光元件的光來形成照度較高的 曝光光束。而且’本發明的課題在於使顯示用面板基板的 生產性得到提高。 本發明的鄰近曝光裝置包括：多個半導體發光元件， 產生用來形成曝光光束的光；底層(base)基板，搭載多個半 導體發光元件；多個放大透鏡，對應于各半導體發光元件 而設’將從各半導體發光元件產生的光予以放大；以及蠅 眼透鏡，被經多個放大透鏡而放大後的光所照射，且，利 用繩眼透鏡來使經多個放大透鏡而放大後的光予以重合而 形成曝光光束，其中’包括圍繞著從多個放大透鏡到蠅眼 透鏡為止的光路而設置的反射構件，搭載於底層基板的外 周部的半導體發光元件以及與這些半導體發光元件對應的 放大透鏡被配置成’從該半導體發光元件產生並經對應的 放大透鏡而放大後的光的其中一端在不偏離蠅眼透鏡的照 201102767 射面的規定角度以内而入射至蠅眼透鏡，反射構件被配置 成，從搭載於底層基板的外周部的半導體發光元件產生並 經對應的放大透鏡而放大後的光的另一端由該反射構件而 反射後，在不偏離繩眼透鏡的照射面的規定角度以内入射 至蠅眼透鏡。 而且，本發明的鄰近曝光裝置的曝光光束形成方法， 將多個半導體發光元件搭載於底層基板上，從各半導體發 光元件產生用來形成曝光光束的光，對應于各半導體發光 元件而設置多個放大透鏡，將從各半導體發光元件產生的 光通過對應的放大透鏡予以放大後，照射至蠅眼透鏡，利 用蠅眼透鏡來使經多個放大透鏡而放大後的光予以重合而 形成曝光光束，其中，圍繞著從多個放大透鏡到蠅眼透鏡 為止的光路而設置反射構件，將搭載於底層基板的外周部 的半導體發光元件以及與這些半導體發光元件對應的放大 透鏡配置成，從該半導體發光元件產生並經對應的放大透 鏡而放大後的光的其中一端在不偏離蠅眼透鏡的照射面的 規定角度以内而入射至繩眼透鏡，將反射構件配置成，從 格載於底層基板的外周部的半導體發光元件產生並經對應 的放大透鏡而放大後的光的另一端由該反射構件而反射 後，在不偏離蠅眼透鏡的照射面的規定角度以内入射至繩 眼透鏡。 從搭載於底層基板的外周部的半導體發光元件產生並 經對應的放大透鏡而放大後的光内，直接照射至從蠅眼透 鏡的外周到該光的其中一端為止之間的蠅眼透鏡的光在不 201102767 會偏離蠅眼透鏡的照射面的規定角度以内而入射至蠅眼透 鏡，從而被利用於曝光光束的形成。而且，從該半導體發 光元件產生並經對應的放大透鏡而放大後的光内，未直接 照射至從蠅眼透鏡的外周到該光的另一端為止之間的蠅眼 透鏡的光由反射鏡而反射後，在不偏離蠅眼透鏡的照射面 的規定角度以内而入射至蠅眼透鏡，〇從而被利用於曝光 光束的形成。因而，當利用蠅眼透鏡來使從多個半導體發 光元件產生並經放大透鏡而放大後的光予以重合時，可效 率良好地利用各半導體發光元件的光來形成照度較高的曝 光光束。 進而，本發明的鄰近曝光裝置中，將搭載於底層基板 的最外周的半導體發光元件以及與這些半導體發光元件對 應的放大透鏡的光軸朝向蠅眼透鏡的外周而配置，並將反 射鏡與該光軸大致平行地配置著。而且，本發明的鄰近曝 光裝置的曝光光束形成方法中，將搭載於底層基板的最外 周的半導體發光元件以及與這些半導體發光元件對應的放 大透鏡的光軸朝向繩眼透鏡的外周而配置，並將反射鏡與 該光軸大致平行地配置著。由於將搭載於底層基板的最外 周的半導體發光元件以及與這些半導體發光元件對應的放 大透鏡的光軸朝向繩眼透鏡的外周而配置著，因此，為了 使從該半導體發光元件產生並經對應的放大透鏡而放大後 的光的其中一端在規定角度以内入射至繩眼透鏡，則所需 的、從蠅眼透鏡到該半導體發光元件為止的距離將變小。 進而，本發明的鄰近曝光裝置中，底層基板是將多個 201102767 平坦的基板予以組合而構成，多個放大透鏡針對每個該基 板而構成為陣列狀。而且，本發明的鄰近曝光裝置的曝光 光束形成方法中，將多個平坦的基板予以組合而構成底層 基板，將多個放大透鏡針對每個該基板而構成為陣列狀。 從而容易將半導體發光元件安裝至底層基板上，且容易調 整各放大透鏡的光轴。 本發明的顯示用面板基板的製造方法中，使用上述任 φ 一種鄰近曝光裝置來進行基板的曝光，或者，將使用上述 任一種鄰近曝光裝置的曝光光束形成方法而形成的曝光光 束經由光罩來照射至基板，以進行基板的曝光。通過使用 上述鄰近曝光裝置或鄰近曝光裝置的曝光光束形成方法， 曝光光束的照度增加而曝光時間縮短，而且，曝光光束的 光源的壽命變長’因此顯示用面板基板的生產性得以提高。 【發明的效果】 根據本發明的鄰近曝光裝置以及鄰近曝光裝置的曝光 光束形成方法’圍繞著從多個放大透鏡到蠅眼透鏡為止的 ® 光路而設置反射構件’將搭載於底層基板的外周部的半導 體發光元件以及與這些半導體發光元件對應的放大透鏡配 置成，從該半導體發光元件產生並經對應的放大透鏡而放 大後的光的其中一端在不偏離蠅眼透鏡的照射面的規定角 度以内而入射至蠅眼透鏡，將反射構件配置成，從搭載於 底層基板的外周部的半導體發光元件產生並經對應的放大 透鏡而放大後的光的另一端由該反射構件而反射後，在不 偏離繩眼透鏡的照射面的規定角度以内入射至繩眼透鏡， 201102767 由此，當利用蠅眼透鏡來使從多個半導體發光元件產生並 經放大透鏡而放大後的光予以重合時，可效率良好地利用 各半導體發光元件的光來形成照度較高的曝光光束。 進而，根據本發明的鄰近曝光裝置以及鄰近曝光裝置 的曝光光束形成方法’將搭載於底層基板的最外周的半導 體發光元件以及與這些半導體發光元件對應的放大透鏡的 光軸朝向蠅眼透鏡的外周而配置，並將反射構件與該光軸 大致平行地配置著’由此’能夠縮小為了使從該半導體發 光元件產生並經對應的放大透鏡而放大後的光的其中一端 在規定角度以内入射至蠅眼透鏡時所需的、從蠅眼透鏡到 該半導體發光元件為止的距離。 進而，根據本發明的鄰近曝光裝置以及鄰近曝光裝置 的曝光光束形成方法，將多個平坦的基板予以組合而構成 底層基板’將多個放大透鏡針對每個該基板而構成為陣列 狀，由此，能夠容易地將半導體發光元件安裝至底層基板 上’且能夠容易地調整各放大透鏡的光軸。 根據本發明的顯示用面板基板的製造方法，曝光光束 的照度增加而曝光時間縮短，而且，曝光光束的光源的壽 命變長’因此能夠使顯示用面板基板的生產性得以提高。 為讓本發明之上述和其他目的、特徵和優點能更明顯 易懂，下文特舉較佳實施例，並配合所附圖式，作詳細說 明如下。 【實施方式】 圖1是表示本發明的一種實施方式的鄰近曝光裝置的 201102767 —I W W t Λ.Λ. 概略結構的圖。鄰近曝光裝置包括底座（base) 3、χ導向 斋（guide )4、X載物台（stage ) 5、Y導向器6、γ載物 台7、Θ载物台8、夹盤（chuck)支撐台9、夾盤1〇、光 罩固定器（mask holder) 20以及曝光光束照射裝置3〇而 構成。鄰近曝光裝置除了包括所述構件以外，還包括將基 板1搬入到夹盤10上或將基板1從夾盤1〇上搬出的基才1 搬送機器人（robot)以及對裝置内的溫度進行管理的溫度 φ 控制單元（unit)等。 又 另外，以下所說明的實施方式中的XY方向僅為例 示，也可將X方向與Y方向予以調換。 在圖1中，夹盤10位於進行基板i的曝光的曝光位置 處。在曝光位置的上空，設置著保持光罩2的光罩固定器 20光罩固疋器20對光罩2的周邊部進行真空吸附而保持 該光罩2。在保持於光罩固定器20的光罩2的上空配置著 曝光光束照射裝置30。在曝光時，來自曝光光束照射裝置 30的曝光光束透過光罩2而照射至基板！，由此來將 # 2的圖案轉印到基板1的表面上，從而在該基板1上_ 圖案。 战 夾盤10通過X載物台5來向遠離曝光位置的 (1—) /卸載（unlGad)位置移動。在裝載/卸載位置= 通過未圖示的基板搬送機器人來將基板1搬入到夾盤1〇 上’或將基板1從夾盤1〇上搬出。使用設置在夹盤1 $多個上頂銷（pin)來將基板1裝載到夾盤1G上以及將 基板1從夾盤10上予以卸載。上頂銷被收納在夹盤1〇】 11 201102767 内部’在從㈣1G的内部上升而將基板i裝載到夹盤ι〇 上時’該上頂銷從基板搬送機器人接納基板卜而將基板！The life of the optical element and the semiconductor of the light diode and the like are long, and the number of hours of the optical element is small, and the exposure processing is interrupted. Therefore, productivity improvement can be expected. [Patent Document] [Patent Document 1] Japanese Laid-Open Patent Publication No. 2006-332077 discloses the use of a plurality of semiconductor light-emitting elements for a light source that generates an exposure beam: Patent Document 1 As an optical integrator. The lens is a lens array in which a single lens is vertically and horizontally 歹J lens array). ® 10 is a diagram illustrating the operation of the eye lens. The light generated from the plurality of semiconductor light-emitting elements 42 is amplified by the magnifying lens 43 and then illuminated. The ship lens 45 projects the light amplified by the local amplification lens 43 onto the phase-irradiation surface to make the light coincide, and the illuminance distribution is made uniform. At this time, if the human incidence angle ρ is larger than the predetermined angle, the light incident on the eye lens 45 is deviated from the can-eye transmission surface. In recent years, with the large surface of the display panel, the larger the size of the substrate, the more the source of the light beam is exposed, the more illuminating the light is required. The adjacent exposure is mainly used for the exposure of large substrates. In the device, when a plurality of semiconductor light-emitting elements are used as a light source for generating an exposure beam, the output of the semiconductor light-emitting element is much smaller than that of the conventional lamp. Therefore, it is necessary to use hundreds to thousands of semiconductor light-emitting elements side by side. At this time, there is a problem that a part of the light generated from the outer semiconductor light-emitting element and amplified by the magnifying lens becomes larger toward the fly-eye lens and deviates from the irradiation surface of the fly-eye lens, so that it is not used for the exposure beam. form. SUMMARY OF THE INVENTION An object of the present invention is to efficiently form light by using light of each semiconductor light-emitting element when a fly-eye lens is used to superimpose light generated from a plurality of semiconductor light-emitting elements and amplified by a magnifying lens. Higher exposure beam. Further, the problem of the present invention is to improve the productivity of the panel substrate for display. The proximity exposure apparatus of the present invention includes: a plurality of semiconductor light-emitting elements that generate light for forming an exposure beam; a base substrate on which a plurality of semiconductor light-emitting elements are mounted; and a plurality of amplification lenses that correspond to the respective semiconductor light-emitting elements. The light generated from each of the semiconductor light-emitting elements is amplified; and the fly-eye lens is irradiated with light amplified by a plurality of magnifying lenses, and the light amplified by the plurality of magnifying lenses is used by the eye lens. The exposure light beam is formed to overlap, and the 'reflection member provided around the optical path from the plurality of magnifying lenses to the fly-eye lens, the semiconductor light-emitting elements mounted on the outer peripheral portion of the underlying substrate, and the magnifying lens corresponding to the semiconductor light-emitting elements One end of the light that is generated from the semiconductor light-emitting element and amplified by the corresponding magnifying lens is incident on the fly-eye lens within a predetermined angle that does not deviate from the projection surface of the fly-eye lens 201102767, and the reflection member is configured Produced from a semiconductor light-emitting device mounted on the outer peripheral portion of the underlying substrate and After another light after amplified magnifying lens end by the reflective member is reflected, within a predetermined angle without departing from the irradiated surface of the rope eye lens enters the fly-eye lens. Further, in the exposure beam forming method of the proximity exposure apparatus of the present invention, a plurality of semiconductor light-emitting elements are mounted on the underlying substrate, and light for forming an exposure beam is generated from each of the semiconductor light-emitting elements, and a plurality of light-emitting elements are provided corresponding to the respective semiconductor light-emitting elements. The magnifying lens amplifies the light generated from each of the semiconductor light-emitting elements by a corresponding magnifying lens, and then irradiates the fly-eye lens, and the fly-eye lens superimposes the light amplified by the plurality of magnifying lenses to form an exposure beam. In the meantime, a reflection member is provided around the optical path from the plurality of magnifying lenses to the fly-eye lens, and the semiconductor light-emitting elements mounted on the outer peripheral portion of the underlying substrate and the magnifying lens corresponding to the semiconductor light-emitting elements are arranged to emit light from the semiconductor. One end of the light generated by the element and amplified by the corresponding magnifying lens is incident on the eye lens within a predetermined angle not departing from the irradiation surface of the fly's eye lens, and the reflective member is disposed so as to be carried from the outer periphery of the substrate a semiconductor light emitting element is generated and passed through a corresponding magnifying lens The other end of the amplified light is reflected by the reflecting member, and then incident on the rope lens at a predetermined angle without deviating from the irradiation surface of the fly's eye lens. Light emitted from a semiconductor light-emitting device mounted on the outer peripheral portion of the underlying substrate and amplified by the corresponding magnifying lens, directly irradiated to the fly-eye lens from the outer periphery of the fly-eye lens to one end of the light It is incident on the fly-eye lens when it is not within the predetermined angle of the irradiation surface of the fly-eye lens, and is utilized for the formation of the exposure beam. Further, in the light generated by the semiconductor light-emitting element and amplified by the corresponding magnifying lens, the light of the fly-eye lens that is not directly irradiated from the outer periphery of the fly-eye lens to the other end of the light is reflected by the mirror. After the reflection, it is incident on the fly-eye lens within a predetermined angle without deviating from the irradiation surface of the fly-eye lens, and is used for the formation of the exposure beam. Therefore, when the fly-eye lens is used to superimpose the light generated by the plurality of semiconductor light-emitting elements and amplified by the magnifying lens, the light of each semiconductor light-emitting element can be efficiently used to form an exposure light beam having a high illuminance. Further, in the proximity exposure apparatus of the present invention, the optical axis of the semiconductor light-emitting device mounted on the outermost periphery of the underlying substrate and the magnifying lens corresponding to the semiconductor light-emitting device are arranged toward the outer periphery of the fly-eye lens, and the mirror and the mirror are disposed. The optical axes are arranged substantially in parallel. Further, in the exposure beam forming method of the proximity exposure apparatus of the present invention, the optical axis of the semiconductor light-emitting element mounted on the outermost periphery of the underlying substrate and the magnifying lens corresponding to the semiconductor light-emitting elements are arranged toward the outer circumference of the eye lens, and The mirror is disposed substantially parallel to the optical axis. Since the optical axis of the semiconductor light-emitting device mounted on the outermost periphery of the base substrate and the magnifying lens corresponding to the semiconductor light-emitting device are disposed toward the outer circumference of the eye lens, in order to generate and correspond to the semiconductor light-emitting device. When one end of the magnified lens and the amplified light is incident on the eye lens within a predetermined angle, the distance from the fly-eye lens to the semiconductor light-emitting element is reduced. Further, in the proximity exposure apparatus of the present invention, the underlying substrate is formed by combining a plurality of substrates having a flat surface of 201102767, and the plurality of magnifying lenses are formed in an array shape for each of the substrates. Further, in the exposure beam forming method of the proximity exposure apparatus of the present invention, a plurality of flat substrates are combined to form an underlayer substrate, and a plurality of magnifying lenses are formed in an array shape for each of the substrates. Thereby, the semiconductor light emitting element can be easily mounted on the underlying substrate, and the optical axis of each of the magnifying lenses can be easily adjusted. In the method for manufacturing a panel substrate for display according to the present invention, the exposure of the substrate is performed using any of the above adjacent exposure devices, or the exposure beam formed by using the exposure beam forming method of any of the above adjacent exposure devices is passed through the mask. Irradiation to the substrate to expose the substrate. By using the exposure beam forming method of the above adjacent exposure device or the adjacent exposure device, the illuminance of the exposure beam is increased and the exposure time is shortened, and the life of the light source of the exposure beam is made long. Thus, the productivity of the panel substrate for display is improved. [Effects of the Invention] The proximity exposure apparatus according to the present invention and the exposure beam forming method adjacent to the exposure apparatus 'provide a reflection member ′ around the optical path from the plurality of magnifying lenses to the fly-eye lens to be mounted on the outer peripheral portion of the underlying substrate The semiconductor light-emitting elements and the magnifying lenses corresponding to the semiconductor light-emitting elements are disposed such that one end of the light generated from the semiconductor light-emitting elements and amplified by the corresponding magnifying lens is within a predetermined angle that does not deviate from the irradiation surface of the fly-eye lens When it is incident on the fly-eye lens, the reflection member is disposed so that the other end of the light generated by the semiconductor light-emitting element mounted on the outer peripheral portion of the underlying substrate and amplified by the corresponding magnifying lens is reflected by the reflective member, and then The lens is incident on the eyeglass lens at a predetermined angle from the irradiation surface of the eye lens, 201102767. Thus, when the fly-eye lens is used to overlap the light generated from the plurality of semiconductor light-emitting elements and amplified by the magnifying lens, the efficiency is obtained. Good use of the light of each semiconductor light-emitting element to form a high-illumination exposure Beam. Further, according to the adjacent exposure apparatus of the present invention and the exposure beam forming method adjacent to the exposure apparatus, the optical axis of the semiconductor light-emitting element mounted on the outermost periphery of the substrate and the magnifying lens corresponding to the semiconductor light-emitting elements are directed toward the periphery of the fly-eye lens. And disposing, and arranging the reflection member substantially parallel to the optical axis, thereby reducing the incidence of one of the light amplified from the semiconductor light-emitting element and amplified by the corresponding magnifying lens within a predetermined angle The distance from the fly's eye lens to the semiconductor light-emitting element required for the fly-eye lens. Further, according to the adjacent exposure apparatus of the present invention and the exposure beam forming method adjacent to the exposure apparatus, a plurality of flat substrates are combined to form an underlying substrate, and a plurality of magnifying lenses are formed in an array shape for each of the substrates. The semiconductor light emitting element can be easily mounted on the underlying substrate' and the optical axis of each of the magnifying lenses can be easily adjusted. According to the method of manufacturing a panel substrate for display of the present invention, the illuminance of the exposure beam is increased, the exposure time is shortened, and the life of the light source of the exposure beam is increased. Therefore, the productivity of the panel substrate for display can be improved. The above and other objects, features and advantages of the present invention will become more <RTIgt; [Embodiment] FIG. 1 is a view showing a schematic configuration of a proximity exposure apparatus according to an embodiment of the present invention, which is a 201102767-I W W t Λ.Λ. The proximity exposure device includes a base 3, a guide 4, an X stage 5, a Y guide 6, a gamma stage 7, a load stage 8, and a chuck support. The stage 9, the chuck 1A, the mask holder 20, and the exposure beam irradiation device 3 are formed. The proximity exposure device includes, in addition to the member, a base robot that carries the substrate 1 onto the chuck 10 or carries the substrate 1 out of the chuck 1 and manages the temperature inside the device. Temperature φ Control unit (unit), etc. Further, the XY directions in the embodiments described below are merely examples, and the X direction and the Y direction may be exchanged. In Fig. 1, the chuck 10 is located at an exposure position where exposure of the substrate i is performed. A mask holder 20 for holding the mask 2 is provided above the exposure position. The mask holder 20 vacuum-adsorbs the peripheral portion of the mask 2 to hold the mask 2. The exposure beam irradiation device 30 is disposed above the mask 2 held by the mask holder 20. At the time of exposure, the exposure light beam from the exposure beam irradiating device 30 is transmitted through the reticle 2 to the substrate! Thus, the pattern of #2 is transferred onto the surface of the substrate 1 so as to be patterned on the substrate 1. The warhead chuck 10 is moved by the X stage 5 to the (1 -) / unloaded (unlGad) position away from the exposure position. At the loading/unloading position = the substrate 1 is carried onto the chuck 1 by a substrate transfer robot (not shown) or the substrate 1 is carried out from the chuck 1 . The substrate 1 is loaded onto the chuck 1G and the substrate 1 is unloaded from the chuck 10 using a plurality of upper pins disposed on the chuck 1 $. The upper top pin is stored in the chuck 1〇] 11 201102767 The inner part is mounted on the chuck ι〇 when it rises from the inside of the (4) 1G. The upper top pin receives the substrate from the substrate transfer robot and the substrate is placed!

從夾盤10上予以卸載時，該上頂銷將基板i L 送機器人。 職 夾盤10經由夾盤支稽台9而搭載於θ載 =物台8的下方設置著γ載物台7Αχ載物台5。= ^ Ά齡設置於底座3的Χ導向器4上，並沿著該χ 4而向Χ方向（圖1的圖面橫方向）移動。γ載物 載在設置於Χ載物台5的¥導向器 器6，¥方向⑷的圖面縱深方向)1多°動θ 動。在繼崎處mm光位置之間移 動、γ載物台7向γ方向的 载物口 5向χ方向的移When the unloading from the chuck 10, the upper pin pushes the substrate i L to the robot. The job chuck 10 is mounted on the lower side of the object table 8 via the chuck table 9 and is provided with a γ stage 7 Αχ stage 5 . = ^ The Ά is set on the Χ guide 4 of the base 3, and moves along the χ 4 in the Χ direction (the horizontal direction of the drawing of Fig. 1). The γ-load is carried by the ¥ guide 6 provided on the cymbal stage 5, and the direction of the drawing direction of the direction (4) is more than 1°. Moving between the mm position of the substation, the shift of the γ stage 7 in the γ direction toward the χ direction

=:ent)。在曝光位置處，通過〜載二= 方向的移動以及Y載物台7 =入戰物口 5向X 於夾盤10的基板1向χγ 肖的移動’來進行搭載 通過X載物台5向χ方向^^進（卿）移動。並且， 的移動以及θ載物台8向Θ方向的^載^台7向Υ方向 對準。而且，通過未圖示的z_n=基板i的 定器20向Z方向（圖j 上，機構來使光罩固 上下方向）移動及傾斜， 12 201102767 由此，進行光罩2與基板1的間隙對準。 另外，在本貫施方式中，使光罩固定器2〇向z方向 移動及傾斜’由此來進行光罩2與基板i的間隙對準，但 也可在夾盤支撐台9上設置Z-傾斜機構，並使夾盤1〇向z 方向移動及傾斜’由此來進行光罩2與基板丨的間隙對準。 曝光光束照射裝置30包括准直透鏡群32、平面鏡33、 照度感測器35以及光源單元4〇而構成。後述的光源單元 • 40在進行基板1的曝光時產生曝光光束，而在未進行基板 1的曝光時並不產生曝光光束。從光源單元40產生的曝光 光束透過准直透鏡群32而成為平行光線束後，由平面鏡 33反射而照射至光罩2。通過被照射至光罩2的曝光光束 來將光罩2的圖案轉印到基板1±，從而進行基板工的爆 光。 、 在平面鏡33的背側附近配置著照度感測器35。在平 面鏡33上設置著使曝光光束的一部分通過的較小的開 口。照度感測器35接收通過平面鏡33的開口後的光，二 瞻㈣光光束的照度進行敏。照度❹jf| %的測定結 輸入到光源單元4〇中。 圖2是表示光源單元的一例的圖。光源單元4〇包括底 層基板4卜半導體發光元件42、放大透鏡43、绳眼透於 45、控制電路46、冷卻構件47、冷卻裝置48以及反射^ 50而構成。在底層基板41上搭載著多個半導體發光元^ 42。底層基板41通過控制電路46的控制來驅動各半導體 發光兀件42。各半導體發光元件42由發光二極體或雷射 13 201102767 二極體（laser diode)等所構成，且產生形成曝光光束的光。 控制電路46根據照度感測器35的測定結果來控制各半導 體發光元件42的驅動。 另外，在圖2中示出了 9個半導體發光元件幻，但在 貫際的光源單元中使用著數百至數千個左右的半導體發光 元件。 對應于各半導體發光元件42而設置著放大透鏡43， 各放大透鏡43將從各半導體發光元件42產生的光予以放 大，並使該光照射至繩眼透鏡45。圖3 (a)、圖3 (b) 是表示圖2所示的光源單元的半導體發光元件以及放大透 鏡的光轴方向的圖。圖3 (a)的箭頭表示橫向觀察底層基 板41時的半導體發光元件42以及放大透鏡43的光軸方 向。而且，圖3 (b)的箭頭表示從正面觀察底層基板41 時的半導體發光元件42以及放大透鏡43的光軸方向。 如圖3(b)所示，底層基板41是將多個基板41心41卜 41c組合而構成。在本例中，配置在中央部的基板4u的 上下以及左右的基板41b如圖3 (a)所示，呈將圓筒的側 面的一部分切取後的形狀。並且，中央部的基板4U的表 面呈將上下的基板41b的表面與左右的基板411^的表面組 合而成的形狀。基板41c為平坦，多個半導體發光元件42 經由導熱構件47a而傾斜地搭載著。搭載於基板4U、4比 的半導體發光元件42以及與這些半導體發光元件對應的 放大透鏡43的光軸如圖3 (a)、圖3 (b)所示’朝向蠅 眼透鏡45的中央而配置著。搭載於基板41c的半導體發光 201102767 --.Γ — 元件42以及與這些半導體發光元件對應的放大透鏡43的 光軸如圖3 (a)、圖3 (b)所示’朝向繩眼透鏡45而彼 此平行地配置著。 圖4是表示光源單元的另一例的圖。而且，圖5(a)、 圖5 (b)是表示圖4所示的光源單元的半導體發光元件以 及放大透鏡的光軸方向的圖。圖5 (a)的箭頭表示觀察圖 5 (b)所示的底層基板41的A-A部剖面時的半導體發光 φ 元件42以及放大透鏡43的光軸方向。而且，圖5 (b)的 箭頭表示從正面觀察底層基板41時的半導體發光元件42 以及放大透鏡43的光軸方向。 在本例中，底層基板41是將多個平坦的基板4ia、 41b、41c組合而構成。位於底層基板41的外周部的基板 41b、41c朝向蠅眼透鏡45而傾斜地設置著。放大透鏡43 針對每個基板41a、41b、41c而構成為陣列狀。搭載於各 基板41a、41b、41c的半導體發光元件42以及與這些半導 體發光元件對應的放大透鏡43的光軸如圖5 (a)、圖5 • Cb)所示，朝向蠅眼透鏡45而彼此平行地配置著。由於將 多個平坦的基板41a、41b、41c予以組合而構成底層基板 41 ’並將多個放大透鏡43針對每個基板41a、41b、41e 而構成為陣列狀’因此容易將半導體發光元件42安裝至底 層基板41 ’且容易進行放大透鏡43的光軸的調整。 在圖2以及圖4中，圍繞著從多個放大透鏡43到蠅眼 透鏡45的光路而設置著反射鏡5〇。在圖2以及圖4所示 的不例中，底層基板41以及蠅眼透鏡45為四邊形，底層 15 201102767 -· - - r — 基板41大於蠅眼透鏡45，因此，反射鏡50呈將四角錐的 上部切取後的形狀。反射鏡50將從搭載於底層基板41的 外周部的基板41b、41c上的半導體發光元件42產生並經 對應的放大透鏡43而放大後的光的一部分予以反射，而照 射至蠅眼透鏡45。=:ent). At the exposure position, the movement through the X-direction direction and the movement of the Y stage 7 = the entrance object 5 to the substrate 1 of the chuck 10 to the χ γ ' are carried out through the X stage 5 χ Direction ^^入 (卿) move. Further, the movement and the θ stage 8 are aligned in the x direction with respect to the carrier 7 in the x direction. Further, the z_n=the stator of the substrate i (not shown) is moved and tilted in the Z direction (the mechanism is used to fix the louver in the vertical direction). 12 201102767 Thereby, the gap between the reticle 2 and the substrate 1 is performed. alignment. Further, in the present embodiment, the mask holder 2 is moved and tilted in the z direction. Thus, the gap between the mask 2 and the substrate i is aligned, but Z may be provided on the chuck support table 9. - tilting mechanism and moving and tilting the chuck 1 z in the z direction - thereby aligning the gap between the reticle 2 and the substrate 。. The exposure beam irradiation device 30 includes a collimator lens group 32, a plane mirror 33, an illuminance sensor 35, and a light source unit 4''. The light source unit 40 to be described later generates an exposure light beam when the substrate 1 is exposed, and does not generate an exposure light beam when the substrate 1 is not exposed. The exposure light beam generated from the light source unit 40 passes through the collimator lens group 32 to become a parallel light beam, and is reflected by the plane mirror 33 to be irradiated to the mask 2. The pattern of the reticle 2 is transferred to the substrate 1± by the exposure light beam irradiated to the reticle 2, whereby the substrate worker is exposed. An illuminance sensor 35 is disposed near the back side of the plane mirror 33. A small opening for passing a part of the exposure beam is provided on the flat mirror 33. The illuminance sensor 35 receives the light that has passed through the opening of the plane mirror 33, and the illuminance of the two-beam light beam is sensitive. The illuminance ❹jf|% of the measured junction is input to the light source unit 4A. FIG. 2 is a view showing an example of a light source unit. The light source unit 4A includes a bottom substrate 4, a semiconductor light emitting element 42, a magnifying lens 43, a rope passing through 45, a control circuit 46, a cooling member 47, a cooling device 48, and a reflection 50. A plurality of semiconductor light-emitting elements 42 are mounted on the underlying substrate 41. The base substrate 41 drives the respective semiconductor light-emitting elements 42 by the control of the control circuit 46. Each of the semiconductor light-emitting elements 42 is composed of a light-emitting diode or a laser 13 201102767 laser diode or the like, and generates light for forming an exposure beam. The control circuit 46 controls the driving of each of the semiconductor light-emitting elements 42 based on the measurement result of the illuminance sensor 35. Further, in Fig. 2, nine semiconductor light-emitting elements are illustrated, but hundreds to thousands of semiconductor light-emitting elements are used in a continuous light source unit. The magnifying lens 43 is provided corresponding to each of the semiconductor light-emitting elements 42, and each of the magnifying lenses 43 amplifies the light generated from each of the semiconductor light-emitting elements 42, and irradiates the light to the eye lens 45. Figs. 3(a) and 3(b) are views showing the optical axis directions of the semiconductor light-emitting elements and the magnifying lens of the light source unit shown in Fig. 2. The arrow of Fig. 3 (a) indicates the optical axis direction of the semiconductor light-emitting element 42 and the magnifying lens 43 when the underlying substrate 41 is viewed laterally. Further, the arrow of FIG. 3(b) indicates the optical axis direction of the semiconductor light-emitting element 42 and the magnifying lens 43 when the underlying substrate 41 is viewed from the front. As shown in Fig. 3(b), the underlying substrate 41 is formed by combining a plurality of substrates 41 and 41b. In the present embodiment, the upper and lower substrates 41b of the substrate 4u disposed at the center portion have a shape in which a part of the side surface of the cylinder is cut as shown in Fig. 3(a). Further, the surface of the substrate 4U at the center portion has a shape in which the surface of the upper and lower substrates 41b and the surfaces of the left and right substrates 411 are combined. The substrate 41c is flat, and the plurality of semiconductor light-emitting elements 42 are mounted obliquely via the heat transfer member 47a. The optical axes of the semiconductor light-emitting elements 42 mounted on the substrates 4U and 4 and the magnifying lenses 43 corresponding to the semiconductor light-emitting elements are arranged toward the center of the fly-eye lens 45 as shown in FIGS. 3(a) and 3(b). With. The semiconductor light-emitting device 201102767 mounted on the substrate 41c--the optical axis of the element 42 and the magnifying lens 43 corresponding to these semiconductor light-emitting elements is directed toward the eye lens 45 as shown in Figs. 3(a) and 3(b). They are arranged in parallel with each other. 4 is a view showing another example of a light source unit. 5(a) and 5(b) are diagrams showing the semiconductor light-emitting elements of the light source unit shown in Fig. 4 and the optical axis direction of the magnifying lens. The arrow of Fig. 5(a) shows the direction of the optical axis of the semiconductor light-emitting φ element 42 and the magnifying lens 43 when the cross section of the A-A portion of the underlying substrate 41 shown in Fig. 5(b) is observed. Further, the arrow of Fig. 5(b) indicates the optical axis direction of the semiconductor light-emitting element 42 and the magnifying lens 43 when the underlying substrate 41 is viewed from the front. In this example, the base substrate 41 is configured by combining a plurality of flat substrates 4ia, 41b, and 41c. The substrates 41b and 41c located on the outer peripheral portion of the underlying substrate 41 are disposed obliquely toward the fly's eye lens 45. The magnifying lens 43 is formed in an array shape for each of the substrates 41a, 41b, and 41c. The optical axes of the semiconductor light-emitting elements 42 mounted on the respective substrates 41a, 41b, and 41c and the magnifying lens 43 corresponding to the semiconductor light-emitting elements are as shown in FIGS. 5(a) and 5Cb, and are directed toward the fly-eye lens 45. Arranged in parallel. Since the plurality of flat substrates 41a, 41b, and 41c are combined to form the underlying substrate 41' and the plurality of magnifying lenses 43 are formed in an array shape for each of the substrates 41a, 41b, and 41e, it is easy to mount the semiconductor light emitting element 42. The adjustment to the optical axis of the magnifying lens 43 is easy to the underlying substrate 41'. In Figs. 2 and 4, a mirror 5A is provided around the optical path from the plurality of magnifying lenses 43 to the fly-eye lens 45. In the example shown in FIG. 2 and FIG. 4, the base substrate 41 and the fly-eye lens 45 are quadrangular, and the bottom layer 15 201102767 -· - - r - the substrate 41 is larger than the fly-eye lens 45, and therefore, the mirror 50 has a quadrangular pyramid The upper part is cut into the shape. The mirror 50 reflects a part of the light generated by the semiconductor light-emitting element 42 mounted on the substrates 41b and 41c on the outer peripheral portion of the base substrate 41 and amplified by the corresponding magnifying lens 43 and is irradiated to the fly-eye lens 45.

蠅眼透鏡45使經多個放大透鏡43而放大後的光予以 重合’以形成照度分佈均勻的曝光光束。此時，蠅眼透鏡 45將從放大透鏡43直接入射的光與經反射鏡5〇反射後入 射的光合起來以形成曝光光束。從放大透鏡43或反射鏡 50以大於規定角度α的入射角度而入射至繩眼透鏡45的 光會偏離繩眼透鏡45的照射面，而不被利用於曝光光束的 形成。The fly's eye lens 45 superimposes the light amplified by the plurality of magnifying lenses 43 to form an exposure beam having a uniform illuminance distribution. At this time, the fly-eye lens 45 combines the light directly incident from the magnifying lens 43 with the light reflected by the mirror 5 以 to form an exposure beam. The light incident on the eye lens 45 from the magnification lens 43 or the mirror 50 at an incident angle larger than the predetermined angle α may deviate from the irradiation surface of the eye lens 45, and is not utilized for the formation of the exposure beam.

在底層基板41的背面，安裝著冷卻構件47。冷、部 件47在内部具有冷卻水所流經的冷卻水通路，通過從冷 裝置48向冷卻水通路供給的冷卻水來對各半導體發光 件42進行冷卻。另外，冷卻構件47及冷卻裝置48並不 於此，也可採用包括散熱板及冷卻風扇（fan)的空冷方^ 以下’對本發明的-種實施方式的鄰近曝光裝7置^ 光光束形成綠進行綱。圖6切本發明的—種實施 式的鄰近曝絲置的曝光光束形成方法進行說明的圖。 本發明中，如® 6所示，將搭載於底層基板41的外周部 半導體發光70件42以及與這財導體發光元件對應的 大透鏡43配置成，從該半導體發光元件以生並㈣ 的放大透鏡43而放大後的光的其中—端，在不偏_眼 16 201102767 鏡45的照射面的規定角度α以内而入射至蠅眼透鏡45。 並且’將反射鏡50配置成，從搭載於底層基板41的外周 部的半導體發光元件42產生並經對應的放大透鏡43而放 大後的光的另一端由該反射鏡50反射後，在不偏離繩眼透 鏡45的照射面的規定角度α以内而入射至蠅眼透鏡45。 從搭載於底層基板41的外周部的半導體發光元件42 產生並經對應的放大透鏡4 3而放大後的光内，直接照射至 從蠅眼透鏡45的外周到該光的其中一端為止之間的蠅眼 透鏡45的光在不偏離蠅眼透鏡45的照射面的規定角度α 以内而入射至蠅眼透鏡45，從而被利用於曝光光束的形 成。而且’從該半導體發光元件42產生並經對應的放大透 鏡43而放大後的光内，未直接照射至從蠅眼透鏡45的外 周到該光的另一端為止之間的蠅眼透鏡45的光由反射鏡 50反射後，在不偏離蠅眼透鏡45的照射面的規定角度α 以内而入射至蠅眼透鏡45，從而被利用於曝光光束的形 成。因而’當利用蠅眼透鏡45來使從多個半導體發光元件 42產生並經放大透鏡43而放大後的光予以重合時，可效 率良好地利用各半導體發光元件42的光來形成照度較高 的曝光光束。 進而’在本實施方式中’如圖6所示，將搭載於底層 基板41的最外周的半導體發光元件42以及與這些半導體 發光元件對應的放大透鏡43的光軸朝向蠅眼透鏡45的外 周而配置，並將反射鏡50與該光軸大致平行地配置著。 圖7是表示將搭載於底層基板的最外周的半導體發光 17 201102767 元件以及與這些半導體發光元件對應的放大透鏡的光軸比 繩眼透鏡的外周更朝向内側而配置的示例的圖。在將$載 於底層基板41的最外周的半導體發光元件42以及與這此 半導體發光元件對應的放大透鏡43的光軸比蠅眼透鏡45 的外周更朝向内侧而配置時’為了使從該半導體發光元件 42產生並經對應的放大透鏡43而放大後的光的其中一端 在規定角度α以内入射至蠅眼透鏡45，必須延長從绳眼透 鏡45到該半導體發光元件42為止的距離。 在圖6所示的實施方式中，將搭載於底層基板41的最 外周的半導體發光元件42以及與這些半導體發光元件對 應的放大透鏡43的光軸朝向蠅眼透鏡45的外周而配置， 因此與圖7所示的示例相比，可以縮小為了使從該半導體 發光元件42產生並經對應的放大透鏡43而放大後的光的 其中一端在規定角度α以内入射至蠅眼透鏡45時所需 的、從蠅眼透鏡45到該半導體發光元件42為止的距離。 根據以上所說明的實施方式，圍繞著從多個放大透鏡 43到蠅眼透鏡45為止的光路而設置反射鏡50，將搭載於 底層基板41的外周部的半導體發光元件42以及與這些半 導體發光元件對應的放大透鏡43配置成，從該半導體發光 元件42產生並經對應的放大透鏡43而放大後的光的其中 一端在不偏離蠅眼透鏡45的照射面的規定角度α以内而 入射至蠅眼透鏡45，並將反射鏡50配置成，從搭載於底 層基板41的外周部的半導體發光元件42產生並經對應的 放大透鏡43而放大後的光的另一端由該反射鏡50反射 201102767 後’在不偏離蠅眼透鏡45的照射面的規定角度α以内而 入射至蠅眼透鏡45，由此，在利用蠅眼透鏡45來使從多 個半導體發光元件42產生並經放大透鏡43而放大後的光 予以重合時’能夠效率良好地利用各半導體發光元件42 的光而形成照度較高的曝光光束。 進而’將搭載於底層基板41的最外周的半導體發光元 件42以及與這些半導體發光元件對應的放大透鏡43的光 φ 轴朝向蠅眼透鏡45的外周而配置，並將反射鏡5〇與該光 軸大致平行地配置著，由此，可以縮小為了使從該半導體 發光元件42產生並經對應的放大透鏡43而放大後的光的 其中一端在規定角度α以内入射至蠅眼透鏡45時所需 的、從繩眼透鏡45到該半導體發光元件42為止的距離。 進而’根據圖4所示的示例，將多個平坦的基板4ia、 41b、41c予以組合而構成底層基板41，並將多個放大透鏡 針對每個該基板41a、41b、41c而構成為陣列狀，由此能 夠容易地將半導體發光元件42安裝至底層基板41上，且 能夠容易地調整該放大透鏡43的光軸。 使用本發明的鄰近曝光裝置來進行曝光，或者，將使 用本發明的鄰近曝光裝置的曝光光束形成方法而形成的曝 光光束經由光罩來照射至基板，以進行基板的曝光，由此， 曝光光束的照度增加而曝光時間縮短，而且，曝光光束的 光源的壽命變長’因此能夠提高顯示用面板基板的生產性。 例如’圖8是表示液晶顯示器裝置的TFT基板的製造 步驟的一例的流程圖。在薄膜形成步驟（步驟101)中， 19 201102767 通過濺鍍法或電漿化學氣相沉積（Chemical Vap〇r Deposits ’ CVD)法等’在基板上形成作為液晶驅動用透 明電極的導電顏或絕緣_等_膜。在絲塗布步驟 (步驟1G2)巾’通過輥（_)式塗布法等來塗布感光樹 脂材料（光阻（photo resist))，以在薄膜形成步驟（步 驟1〇1)中所形成的薄膜上形成光阻膜。在曝光步驟（步 驟103)中，使用鄰近曝光裝置或投影曝光裝置等來將光 罩的圖案轉㈣光阻膜上。在顯影步驟（步驟1()4)中，A cooling member 47 is attached to the back surface of the base substrate 41. The cold member 47 has a cooling water passage through which the cooling water flows, and the semiconductor light-emitting members 42 are cooled by the cooling water supplied from the cooling device 48 to the cooling water passage. Further, the cooling member 47 and the cooling device 48 are not limited thereto, and an air-cooling method including a heat dissipation plate and a cooling fan may be employed, and the adjacent light-emitting beam of the embodiment of the present invention is used to form a green light beam to form green. Carry out the program. Fig. 6 is a view for explaining a method of forming an exposure beam adjacent to an exposure wire according to an embodiment of the present invention. In the present invention, as shown in Fig. 6, the semiconductor light-emitting device 70 mounted on the outer peripheral portion of the base substrate 41 and the large lens 43 corresponding to the conductive light-emitting device are arranged to be enlarged from the semiconductor light-emitting device. The center end of the light amplified by the lens 43 is incident on the fly-eye lens 45 within a predetermined angle α of the irradiation surface of the mirror 45 of the 201102767 mirror. Further, the mirror 50 is disposed so that the other end of the light generated by the semiconductor light-emitting element 42 mounted on the outer peripheral portion of the base substrate 41 and amplified by the corresponding magnifying lens 43 is reflected by the mirror 50, and is not deviated. The fly-eye lens 45 is incident on the irradiation surface of the eye lens 45 at a predetermined angle α. The light generated by the semiconductor light-emitting element 42 mounted on the outer peripheral portion of the underlying substrate 41 and amplified by the corresponding magnifying lens 43 is directly irradiated from the outer periphery of the fly-eye lens 45 to one end of the light. The light of the fly's eye lens 45 is incident on the fly-eye lens 45 at a predetermined angle α which does not deviate from the irradiation surface of the fly-eye lens 45, and is utilized for the formation of the exposure light beam. Further, in the light which is generated from the semiconductor light-emitting element 42 and amplified by the corresponding magnifying lens 43, the light of the fly-eye lens 45 is not directly irradiated to the fly-eye lens 45 from the outer periphery of the fly-eye lens 45 to the other end of the light. After being reflected by the mirror 50, it is incident on the fly-eye lens 45 without departing from the predetermined angle α of the irradiation surface of the fly-eye lens 45, and is used for the formation of the exposure beam. Therefore, when the fly-eye lens 45 is used to superimpose the light generated by the plurality of semiconductor light-emitting elements 42 and amplified by the magnifying lens 43, the light of each of the semiconductor light-emitting elements 42 can be efficiently utilized to form a high illuminance. Exposure beam. Further, in the present embodiment, as shown in FIG. 6, the optical axis of the semiconductor light-emitting device 42 mounted on the outermost periphery of the base substrate 41 and the magnifying lens 43 corresponding to these semiconductor light-emitting elements are directed toward the outer periphery of the fly-eye lens 45. The mirror 50 is disposed substantially parallel to the optical axis. FIG. 7 is a view showing an example in which the semiconductor light-emitting 17 201102767 element mounted on the outermost periphery of the underlying substrate and the optical axis of the magnifying lens corresponding to these semiconductor light-emitting elements are arranged further inward than the outer circumference of the eye lens. When the optical axis of the semiconductor light-emitting element 42 carried on the outermost periphery of the base substrate 41 and the magnifying lens 43 corresponding to the semiconductor light-emitting element are disposed more inward than the outer circumference of the fly-eye lens 45, in order to make the semiconductor One end of the light generated by the light-emitting element 42 and amplified by the corresponding magnifying lens 43 is incident on the fly-eye lens 45 within a predetermined angle α, and the distance from the eye lens 45 to the semiconductor light-emitting element 42 must be extended. In the embodiment shown in FIG. 6, the optical axis of the semiconductor light-emitting element 42 mounted on the outermost periphery of the base substrate 41 and the magnifying lens 43 corresponding to these semiconductor light-emitting elements are arranged toward the outer periphery of the fly-eye lens 45, and thus In comparison with the example shown in FIG. 7, it is possible to reduce the need for one end of the light amplified from the semiconductor light-emitting element 42 and amplified by the corresponding magnifying lens 43 to be incident on the fly-eye lens 45 within a predetermined angle α. The distance from the fly's eye lens 45 to the semiconductor light emitting element 42. According to the embodiment described above, the mirror 50 is provided around the optical path from the plurality of magnifying lenses 43 to the fly-eye lens 45, and the semiconductor light-emitting elements 42 mounted on the outer peripheral portion of the underlying substrate 41 and the semiconductor light-emitting elements are provided. The corresponding magnifying lens 43 is disposed such that one end of the light generated from the semiconductor light emitting element 42 and amplified by the corresponding magnifying lens 43 is incident on the fly eye without departing from the irradiation angle of the eye surface of the fly's eye lens 45 by a predetermined angle α. In the lens 45, the mirror 50 is disposed such that the other end of the light generated by the semiconductor light-emitting element 42 mounted on the outer peripheral portion of the underlying substrate 41 and amplified by the corresponding magnifying lens 43 is reflected by the mirror 50 after 201102767' The fly-eye lens 45 is incident on the fly-eye lens 45 without departing from the predetermined angle α of the irradiation surface of the fly-eye lens 45, whereby the fly-eye lens 45 is used to generate the plurality of semiconductor light-emitting elements 42 and amplified by the magnifying lens 43. When the light is superimposed, it is possible to efficiently use the light of each semiconductor light-emitting element 42 to form an exposure light beam having a high illuminance. Further, the semiconductor illuminating element 42 mounted on the outermost periphery of the underlying substrate 41 and the optical φ axis of the magnifying lens 43 corresponding to these semiconductor light-emitting elements are arranged toward the outer circumference of the fly-eye lens 45, and the mirror 5 is coupled to the light. The axes are arranged substantially in parallel, whereby it is possible to reduce the need for one end of the light amplified from the semiconductor light-emitting element 42 and amplified by the corresponding magnifying lens 43 to be incident on the fly-eye lens 45 within a predetermined angle α. The distance from the eye lens 45 to the semiconductor light emitting element 42. Further, according to the example shown in FIG. 4, a plurality of flat substrates 4ia, 41b, and 41c are combined to form the underlying substrate 41, and a plurality of magnifying lenses are formed in an array for each of the substrates 41a, 41b, and 41c. Thereby, the semiconductor light emitting element 42 can be easily mounted on the underlying substrate 41, and the optical axis of the magnifying lens 43 can be easily adjusted. Exposure is performed using the proximity exposure device of the present invention, or an exposure beam formed using the exposure beam forming method of the proximity exposure device of the present invention is irradiated to the substrate via a photomask to perform exposure of the substrate, thereby exposing the light beam The illuminance is increased and the exposure time is shortened, and the life of the light source of the exposure beam is increased. Therefore, the productivity of the panel substrate for display can be improved. For example, Fig. 8 is a flowchart showing an example of a manufacturing procedure of a TFT substrate of a liquid crystal display device. In the film forming step (step 101), 19 201102767 forms a conductive film or insulating layer as a transparent electrode for liquid crystal driving on a substrate by sputtering or chemical vapor deposition (CVD). _ et _ film. In the wire coating step (step 1G2), the photosensitive resin material (photo resist) is applied by a roll coating method or the like to be formed on the film formed in the film forming step (step 1〇1). A photoresist film is formed. In the exposure step (step 103), the pattern of the mask is transferred to the (four) photoresist film using a proximity exposure device or a projection exposure device or the like. In the development step (step 1 () 4),

通過淋浴式（shGwe〇顯影法等，將顯影液供給至光阻膜 上，以去除光阻膜的不要部分。在關（etehing)步驟（步 驟105)中’通過濕式（赠）姓刻，將薄膜形成步驟（步 驟101 +形成的薄獏内、未被光阻膜所遮掩的部分予以 t 剝離步驟（步驟1〇6)中，將在姓刻步驟（步驟 丰趣:成光罩作㈣光阻膜通過獅液而祕。在這些 之ί ’根據需要而實施基板的清洗/乾燥步驟。 ^行-人這些步驟，從而在基板上形成TFT陣列。 的製=驟ΠίϊΐΓΓ裝置的繼光器基板 形成步驟(步驟〇/;t :黑色矩·^ 蝕刻、通過光阻塗布、曝光、顯影、 二而在基板上形成黑色矩陣。在著色圖 :、二々〃驟202)中’通過染色法、顏料分散法、 Γβ 等等，在基板上形成著色圖案。針對R、 (步驟203%圖！著=行該步驟。在保護膜形成步驟 任者色圖案之上形成保護膜，在透明電極 20 201102767 膜形成步驟（步驟204)中，在保護膜之上形成透明電極 膜。在這些步驟之前、中途或之後，根據需要而實施基板 的清洗/乾燥步驟。 在圖8所示的TFT基板的製造步驟中，在曝光步驟（步 驟103)中，在圖9所示的彩色濾光器基板的製造步驟中， 在黑色矩陣形成步驟（步驟201)以及著色圖案形成步驟 (步驟202)的曝光處理中，能夠適用本發明的鄰近曝光裝 置或鄰近曝光裝置的曝光光束形成方法。 以上所述，僅是本發明的較佳實施例而已，並非對本 發明作任何形式上的限制，雖然本發明已以較佳實施例揭 露如上，然而並非用以限定本發明，任何熟悉本專業的技 術人員，在不脫離本發明技術方案範圍内，當可利用上述 揭示的結構及技術内容製作些許的更動或修飾為等同變更 的專效貫施例，但是凡是未脫離本發明技術方案的内容， 依據本發明的技術實質來對以上實施例所作的任何簡單修 改’等同變更與修飾，均仍屬於本發明技術方案的範圍内二 雖然本發明已以較佳實施例揭露如上，然其並非用以 限定本發明’任何熟習此技藝者，在不脫離本^明之精神 =範圍内，當可作些許之更動與潤飾’因此本發明之保護 範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 略結本發_—破施方柄鄰近曝紐置的概 圖2是表示光源單元的一例的圖。 21 2〇11〇2767 圖3(a)、圖3(b)是表示圖2所示的光源單元的半 導體發光元件以及放大透鏡的光軸方向的圖。 圖4是表示光源單元的另一例的圖。 圖5 (a)、圖5 (b)是表示圖4所示的光源單元的半 導體發光元件以及放大透鏡的光軸方向的圖。 圖6是對本發明的一個實施方式的鄰近曝光裝置 光光束形成方法進行說明的圖 * 〃八々丁 5兄明的圓。 是表示將搭載於底層基板的最外周的半導體= 體發光元件對應的放大透鏡的光轴比 透鏡的外周更朝向内側而配置的示例的圖。 -例=示液晶顯示器裝置的Μ基板的製造步驟的 步驟二液f員示器裝置的彩色遽光器基板的製造 环的例的流程圖。 圖 圖丨〇是對蠅眼透鏡的動作進 【主要元件符號說明】 1 :基板 行說明的圖。 2 光罩 底座 導向器 5 : x載物台 6: Y導向器 7 : Y载物台 8 : θ载物台 201102767 9:夾盤支撐台 10 :夾盤 20 :光罩固定器 30 :曝光光束照射裝置 32 :準直透鏡群 33 :平面鏡 35 :照度感測器 40 ··光源單元 ® 41 :底層基板 41a、41b、41c :基板 42 ··半導體發光元件 43 :放大透鏡 45 :蠅眼透鏡 46 :控制電路 47 :冷卻構件 47a .導熱構件 • 48:冷卻裝置 50 :反射鏡 101 〜106、201 〜204 :步驟 α :規定角度 23The developer is supplied to the photoresist film by a shower type (shGwe 〇 development method or the like to remove unnecessary portions of the photoresist film. In the etehing step (step 105), 'by wet (gift) surname, The film forming step (the portion formed in the thin crucible formed in step 101 +, which is not covered by the photoresist film, is subjected to the t-peeling step (step 1〇6), and will be in the step of surname (step fun: into a mask (4) The photoresist film is secreted by the lion liquid. In these cases, the cleaning/drying step of the substrate is carried out as needed. The steps of the person are performed to form a TFT array on the substrate. Substrate formation step (step 〇 /; t : black moment · ^ etching, photoresist coating, exposure, development, two to form a black matrix on the substrate. In the coloring map: two steps 202) 'pass dyeing method , a pigment dispersion method, Γβ, etc., forming a colored pattern on the substrate. For R, (Step 203% Figure!) = This step is formed. A protective film is formed on the protective film forming step over the color pattern, at the transparent electrode 20 201102767 Film formation step (step 204) A transparent electrode film is formed on the protective film. Before, during or after these steps, the cleaning/drying step of the substrate is performed as needed. In the manufacturing step of the TFT substrate shown in FIG. 8, in the exposure step (step 103) In the manufacturing process of the color filter substrate shown in FIG. 9, in the exposure process of the black matrix forming step (step 201) and the coloring pattern forming step (step 202), the proximity exposure device of the present invention can be applied. Or an exposure beam forming method adjacent to the exposure apparatus. The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention in any way. Although the present invention has been disclosed above in the preferred embodiment, it is not In order to limit the scope of the present invention, those skilled in the art can make a few modifications or modifications to the equivalents of the equivalents, without departing from the scope of the present invention. Any simplification of the above embodiments in accordance with the technical essence of the present invention without departing from the technical solution of the present invention. Modifications of the equivalents and modifications are still within the scope of the technical solutions of the present invention. Although the present invention has been disclosed in the preferred embodiments as described above, it is not intended to limit the invention to anyone skilled in the art. The spirit of the Ming = within the scope, when a little change and refinement can be made', therefore, the scope of protection of the present invention is subject to the definition of the scope of the patent application. [Simplified description of the schema] 2 is a view showing an example of a light source unit. 21 2〇11〇2767 FIGS. 3(a) and 3(b) are semiconductor light-emitting elements and enlarged views of the light source unit shown in FIG. Fig. 4 is a view showing another example of the light source unit. Fig. 5 (a) and Fig. 5 (b) are diagrams showing the optical axis of the semiconductor light-emitting element and the magnifying lens of the light source unit shown in Fig. 4 Direction map. Fig. 6 is a view showing a method of forming a light beam adjacent to an exposure apparatus according to an embodiment of the present invention. This is an example in which the optical axis of the magnifying lens corresponding to the semiconductor sensor of the outermost periphery of the underlying substrate is disposed more inward than the outer circumference of the lens. - Example = Step of Manufacturing the Μ Substrate of the Liquid Crystal Display Device Step 2 A flowchart of an example of the manufacture of the color chopper substrate of the liquid-fed device. Figure 丨〇 is the action of the fly-eye lens [Main component symbol description] 1 : The substrate line diagram. 2 Mask base guide 5: x stage 6: Y guide 7: Y stage 8: θ stage 201102767 9: chuck support table 10: chuck 20: mask holder 30: exposure beam Irradiation device 32: collimator lens group 33: plane mirror 35: illuminance sensor 40, light source unit, 41: base substrate 41a, 41b, 41c: substrate 42 · semiconductor light-emitting element 43: magnifying lens 45: fly-eye lens 46 : Control circuit 47: Cooling member 47a. Heat conducting member • 48: Cooling device 50: Mirrors 101 to 106, 201 to 204: Step α: prescribed angle 23

Claims (1)

201102767 七、申請專利範圍： 1. 一種鄰近曝光裝置，包括： 多個半導體發光元件，產生用於形成曝光光束的光； 底層基板’搭載所述多個半導體發光元件； 多個放大透鏡’對應于各半導體發光元件而設，將從 各半導體發光元件產生的光予以放大；以及 繩眼透鏡’被經所述多個放大透鏡而放大後的光所照 射， 利用所述繩眼透鏡來使經所述多個放大透鏡而放大後 的光予以重合而形成所述曝光光束，此鄰近曝光裝置的特 徵在於： 包括圍繞著從所述多個放大透鏡到所述蠅眼透鏡為止 的光路而設置的反射構件， 搭載於所述底層基板的外周部的半導體發光元件以及 與這些半導體發光元件對應的放大透鏡被配置成，從該半 導體發光元件產生並經對應的放大透鏡而放大後的光的其 中一端在不偏離所述蠅眼透鏡的照射面的規定角度以内而 入射至所述蠅眼透鏡， 所述反射構件被配置成，從搭載於所述底層基板的外 周部的半導體發光元件產生並經對應的放大透鏡而放大後 的光的另一端由該反射構件而反射後，在不偏離所述蠅眼 透鏡的照射面的規定角度以内入射至所述蠅眼透鏡。 2. 如申請專利範圍第1項所述的鄰近曝光裝置，其中： 搭載於所述底層基板的最外周的半導體發光元件以及 24 201102767 與這些半導體發光元件對應 眼透鏡的外周而配置， 的放大透鏡使光軸朝向所述绳 所述反射構件是與該光軸大致平行地配置著。 3.如申請專利範圍第15戈2項所述的鄰近曝光裝置， 其中· 所述底層基板疋將多個平坦的基板予以組合而構成， 所述多個放大透鏡針對每個該基板而構成為陣列狀。201102767 VII. Patent application scope: 1. A proximity exposure device comprising: a plurality of semiconductor light-emitting elements generating light for forming an exposure beam; an underlying substrate 'equipped with the plurality of semiconductor light-emitting elements; a plurality of magnifying lenses' corresponding to Each of the semiconductor light-emitting elements is provided to amplify light generated from each of the semiconductor light-emitting elements; and the eye-lens lens 'is irradiated with light amplified by the plurality of magnifying lenses, and the pass-eye lens is used to The plurality of magnifying lenses are superimposed to form the exposure beam, and the proximity exposure device is characterized by: including a reflection disposed around an optical path from the plurality of magnifying lenses to the fly's eye lens The semiconductor light-emitting device mounted on the outer peripheral portion of the underlying substrate and the magnifying lens corresponding to the semiconductor light-emitting device are disposed such that one end of the light amplified from the semiconductor light-emitting device and amplified by the corresponding magnifying lens is Incident to the inside without departing from a prescribed angle of the irradiation surface of the fly's eye lens In the fly-eye lens, the reflection member is disposed such that the other end of the light generated by the semiconductor light-emitting element mounted on the outer peripheral portion of the underlying substrate and amplified by the corresponding magnifying lens is reflected by the reflective member. The fly's eye lens is incident not within a prescribed angle of the irradiation surface of the fly's eye lens. 2. The proximity exposure apparatus according to claim 1, wherein: the semiconductor light-emitting element mounted on the outermost periphery of the underlying substrate; and the magnifying lens disposed on the outer circumference of the eye lens corresponding to the semiconductor light-emitting elements 24 201102767 The reflection member is disposed such that the optical axis faces the rope substantially parallel to the optical axis. 3. The proximity exposure apparatus according to claim 15 wherein the bottom substrate 疋 is formed by combining a plurality of flat substrates, and the plurality of magnifying lenses are configured for each of the substrates. Array shape. 4· 一種鄰近曝光裝置的曝光光束形成方法， 將多個半導體發光元件搭載於底層基板上 ，從各半導 體發光元健㈣於形祕光光束的光， 一對應于各半導體發光元件而設置多個放大透鏡，將從 各半導體發光元件產生的光通過對應的放大透鏡予以放大 後，照射至蠅眼透鏡， 利用蠅眼透鏡來使經多個放大透鏡而放大後的光予以 重合而形成曝光光束，此曝光光束形成方法的特徵在於： 圍繞著從多個放大透鏡到蠅眼透鏡為止的光路而設置 反射構件， 將搭載於底層基板的外周部的半導體發光元件以及與 些半導體發光元件對應的放大透鏡配置成，從該半導體 發光元件產生並經對應的放大透鏡而放大後的光的其中一 端在不偏離蠅眼透鏡的照射面的規定角度以内而入射至蠅 眼透鏡， 將反射構件配置成，從搭載於底層基板的外周部的半 導體發光元件產生並經對應的放大透鏡而放大後的光的另 25 201102767 一端由戎反射構件而反射後，在不偏離蠅眼透鏡的照射面 的規定角度以内入射至蠅眼透鏡。 5. 如申請專利範圍第4項所述的鄰近曝光裝置的曝光 光束形成方法，其中： 將搭載於底層基板的最外周的半導體發光元件以及與 這些半導體發光元件對應的放大透鏡的光軸朝向蠅眼透鏡 的外周而配置， 將反射構件與該光轴大致平行地配置著。 6. 如申請專利範圍第4或5項所述的鄰近曝光裝置的 曝光光束形成方法，其中： 將多個平坦的基板予以組舍而構成底層基板，將多個 放大透鏡針對每個該基板而構成為陣列狀。 7. —種顯示用面板基板的製造方法，其特徵在於： 使用如申凊專利範圍第1至3項中任一項所述的鄰近 曝光裝置來進行基板的曝光。 8. —種顯示用面板基板的製造方法，其特徵在於： 將使用如申請專利範圍第4至6項中任一項所述的鄰 近曝光裝置的曝光光束形成方法而形成的曝光光束經由光 罩而照射至基板，以進行基板的曝光。 264. A method of forming an exposure beam adjacent to an exposure apparatus, wherein a plurality of semiconductor light-emitting elements are mounted on a base substrate, and each of the semiconductor light-emitting elements is provided with a plurality of light beams of a shape-shaped light beam, and a plurality of light-emitting elements are provided corresponding to each of the semiconductor light-emitting elements. The magnifying lens amplifies the light generated from each of the semiconductor light-emitting elements by a corresponding magnifying lens, and then irradiates the fly-eye lens, and the fly-eye lens superimposes the light amplified by the plurality of magnifying lenses to form an exposure beam. The exposure beam forming method is characterized in that a reflection member is provided around an optical path from a plurality of magnifying lenses to a fly-eye lens, and a semiconductor light-emitting element mounted on an outer peripheral portion of the underlying substrate and a magnifying lens corresponding to the semiconductor light-emitting elements are provided. Arranged such that one end of the light generated from the semiconductor light-emitting element and amplified by the corresponding magnifying lens is incident on the fly-eye lens within a predetermined angle not departing from the illumination surface of the fly-eye lens, and the reflective member is configured to Semiconductor light-emitting device mounted on the outer peripheral portion of the underlying substrate The other end of the 2011 02767, which is amplified by the corresponding magnifying lens, is reflected by the 戎 reflecting member, and then incident on the fly's eye lens within a predetermined angle without deviating from the irradiation surface of the fly's eye lens. 5. The exposure beam forming method of the proximity exposure apparatus according to claim 4, wherein: the optical axis of the semiconductor light-emitting element mounted on the outermost periphery of the underlying substrate and the magnifying lens corresponding to the semiconductor light-emitting elements are oriented toward the fly The outer circumference of the eye lens is disposed, and the reflection member is disposed substantially in parallel with the optical axis. 6. The exposure beam forming method of the proximity exposure device of claim 4, wherein: the plurality of flat substrates are grouped to form an underlying substrate, and the plurality of magnifying lenses are for each of the substrates. It is configured in an array. A method of manufacturing a panel substrate for display, comprising: exposing a substrate by using a proximity exposure device according to any one of claims 1 to 3. 8. A method of manufacturing a panel substrate for display, comprising: exposing an exposure beam formed by an exposure beam forming method of the proximity exposure device according to any one of claims 4 to 6 The substrate is irradiated to expose the substrate. 26
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