CN103257530A - Proximity exposure apparatus, method of forming exposure light in the proximity exposure apparatus and method of manufacturing a display panel substrate - Google Patents
Proximity exposure apparatus, method of forming exposure light in the proximity exposure apparatus and method of manufacturing a display panel substrate Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78612—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
- H01L29/78615—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect with a body contact
Abstract
The invention relates to a proximity exposure apparatus, a method of forming exposure light in the proximity exposure apparatus and a method of manufacturing a display panel substrate. The distance from the centers of a semiconductor light-emitting component group supported on a substrate and the distance from the center of a concave mirror to the center of an incidence surface of a fly's-eye lens are enabled to be equal to the focal length of the concave mirror, and the centers of the semiconductor light-emitting component group supported on the substrate is arranged on the substrate and the fly's-eye lens in a way that the centers are symmetrical by the normal of a focal point of the concave mirror. A plurality of semiconductor light-emitting components and a plurality of amplifying lenses are provided in a way that the optical axes of light generated by the semiconductor light-emitting components and amplified by corresponding amplifying lenses and reflected by the concave mirror income the fly's-eye lens within a specified angle of the incidence surface of the fly's-eye lens.
Description
Technical field
The present invention relates to a kind ofly wait in the manufacturing of display panel (panel) substrate at liquid crystal display (display) device, use a plurality of semiconductor light-emitting elements and use fly's-eye lens (fly eye lens) as the exposure light method of formationing of proximity (proximity) exposure device of optical integrator (optical integrator), proximity printing device, and these the manufacture method of display panel substrate of use at the light source that produces exposure light.
Background technology
Thin film transistor (TFT) (the Thin Film Transistor of the liquid crystal indicator that uses as display panel, TFT) substrate or colored filter (color filter) substrate, plasm display panel (plasma display panel) substrate, organic electroluminescent (Electroluminescence, EL) manufacturing of display panel substrate etc. is to use exposure device, and forms pattern (pattern) by photoetching (photolithography) technology at substrate and carry out.As exposure device, exist to use lens (lens) or eyeglass with the pattern of mask (mask) be projected to projection (projection) mode on the substrate, and being provided with small gap (near gap (proximity gap)) between mask and the substrate with the pattern transfer of the mask proximity mode to the substrate.The proximity mode is compared the pattern resolution with projection pattern can be relatively poor, but the formation of illuminating optical system is simple and processing power is high and be suitable for volume production and use.
In the past, in the light source of the generation of proximity printing device exposure light, use such as mercury vapor lamp (mercury lamp), Halogen lamp LED (halogen lamp), xenon lamp (xenon lamp) etc. gases at high pressure (gas) are enclosed to the interior lamp (lamp) of fluorescent tube (bulb).The life-span of these lamps is shorter, if surpass specific service time then must change lamp.For example, be under 750 hours the situation, if light a lamp continuously, then must change 1 time in about 1 month in the life-span of lamp.Owing to when changing lamp, interrupt exposure-processed, so throughput rate reduces.
On the other hand, in patent documentation 1, announcement has: the technology of using the light source of light emitting diode (light-emitting diode) or laser diode semiconductor light-emitting elements such as (laser diode), conduct exposure light in the proximity printing device.The life-span of semiconductor light-emitting elements such as light emitting diode or laser diode is thousands of hours, the length of comparing with lamp, and the situation of interrupting exposure-processed is less, therefore can expect the raising of throughput rate.
In using in the light source that is producing exposure light under the situation of a plurality of semiconductor light-emitting elements, as institute's record in the patent documentation 1, use fly's-eye lens (fly-eye lens) is as optical integrator (optical integrator).Fly's-eye lens is the lens arra (lens array) that a plurality of simple lenses are arranged in length and breadth.Figure 12 is the figure that the action to fly's-eye lens describes.To after amplifying respectively, expose to fly's-eye lens 45 by amplifying lens 43 (magnification lens) from the light that a plurality of semiconductor light-emitting elements 42 produce.Fly's-eye lens 45 makes the light that amplifies by a plurality of amplifying lenses 43 to identical shadow surface projection and coincidence, thereby makes the Illumination Distribution homogenization.At this moment, if the incident angle β of light that is incident to fly's-eye lens 45 greater than special angle, then this light can depart from the shadow surface of fly's-eye lens 45.
In recent years, substrate maximizes along with the big pictureization of display panel, thus to the exposure light light source requirements its be the higher illumination person.In the proximity printing device of the exposure that is mainly used in large substrate, in using under the situation of a plurality of semiconductor light-emitting elements at the light source that produces exposure light, the output of semiconductor light-emitting elements is much smaller than in the past lamp, therefore must arrange and use hundreds of～semiconductor light-emitting elements about thousands of.In this case, there are the following problems: produce and the part of the light that amplifies by amplifying lens becomes big to the incident angle of fly's-eye lens from the semiconductor light-emitting elements in the outside, depart from the shadow surface of fly's-eye lens, and the formation of the light that is not used to expose.
In the technology that patent documentation 1 is put down in writing, be provided with reflection part around the light path from a plurality of amplifying lenses to fly's-eye lens, make among the light that produces from semiconductor light-emitting elements, direct irradiation to the light of fly's-eye lens does not reflect at reflection part, and make its at the special angle of the shadow surface that does not depart from fly's-eye lens with the interior fly's-eye lens that is incident to, efficient is utilized the light of half and half conductor light-emitting component goodly and is formed the high exposure light of illumination thus.
[prior art document]
[patent documentation]
Patent documentation 1: the Jap.P. spy opens the 2011-17770 communique
[inventing problem to be solved]
Use under a plurality of semiconductor light-emitting elements and the situation of use fly's-eye lens as optical integrator in the light source that is producing exposure light, for the major part that makes the light that produces from each semiconductor light-emitting elements at the special angle of the shadow surface that does not depart from fly's-eye lens with the interior fly's-eye lens that is incident to, and efficient is utilized the light that produces from each semiconductor light-emitting elements goodly, must make the optical axis of the light that produces from each semiconductor light-emitting elements towards the center of the plane of incidence of fly's-eye lens.Therefore, be that the surface of will carry substrate (base) substrate of each semiconductor light-emitting elements forms sphere in the past, and each semiconductor light-emitting elements was configured on the sphere.Yet, adjustment is configured in the setting angle of each semiconductor light-emitting elements on the sphere, so that the optical axis of the light that produces from each semiconductor light-emitting elements is aimed at the operation expend energy at center of the plane of incidence of fly's-eye lens exactly, adjusts the setting angle a large amount of labours of needs and the time of hundreds of～thousands of semiconductor light-emitting elements.
On the other hand, such as in the patent documentation 1 record, if a plurality of smooth substrate in combination that setting angle is different gets up to constitute basal substrate, although then be easy to each semiconductor light-emitting elements is installed on the basal substrate, but must be so that the optical axis of the light that produces from each semiconductor light-emitting elements that carries on each substrate exactly towards the mode at the center of the plane of incidence of fly's-eye lens, be adjusted the setting angle of each substrate.In addition, use as patent documentation 1 as the situation of reflection part under, the length of reflection part reaches several meters, huge reflection part like this is set indeformablely and adjusts the operation of setting angle very difficult.
Summary of the invention
Problem of the present invention is when the light that produces from a plurality of semiconductor light-emitting elements is overlapped and the formation exposure light time at fly's-eye lens, the setting of each semiconductor light-emitting elements becomes easily, but and efficient utilize the light of half and half conductor light-emitting component goodly and form the high exposure light of illumination.In addition, problem of the present invention is to improve the throughput rate of display panel substrate.
[technological means of dealing with problems]
Proximity printing device of the present invention comprises: a plurality of semiconductor light-emitting elements produce the light that forms exposure light; Basal substrate carries a plurality of semiconductor light-emitting elements; A plurality of amplifying lenses, corresponding with each semiconductor light-emitting elements and arrange, the light amplification that will produce from each semiconductor light-emitting elements; And fly's-eye lens; The light that amplifies by a plurality of amplifying lenses is overlapped at fly's-eye lens form exposure light; And this proximity printing device comprises concave mirror, is arranged in the light path from a plurality of amplifying lenses to fly's-eye lens, and this concave mirror has paraboloidal minute surface, makes the light reflection of amplifying by a plurality of amplifying lenses expose to fly's-eye lens; Basal substrate constitutes flat condition, a plurality of semiconductor light-emitting elements are carried at grade, basal substrate and fly's-eye lens are so that from the distance of lift-launch at the semiconductor light-emitting elements group's of basal substrate center to the center of concave mirror, reach the focal length that equals concave mirror from the center of concave mirror to the distance at the center of the plane of incidence of fly's-eye lens, and the center of the semiconductor light-emitting elements group's of carrying at basal substrate center and the plane of incidence of fly's-eye lens clips, and symmetrical manner disposes by the normal of the focus of concave mirror, a plurality of semiconductor light-emitting elements and a plurality of amplifying lens are so that produce and amplify and at the optical axis of the light of concave mirror reflection by corresponding amplifying lens from each semiconductor light-emitting elements, are incident to the mode of fly's-eye lens and dispose with interior at the special angle of the shadow surface that does not depart from fly's-eye lens.
In addition, the exposure light formation method of proximity printing device of the present invention carries a plurality of semiconductor light-emitting elements at basal substrate, produce the light that forms exposure light from each semiconductor light-emitting elements, corresponding with each semiconductor light-emitting elements and a plurality of amplifying lenses are set, amplifying lens by correspondence will make the light that amplifies by a plurality of amplifying lenses overlap at fly's-eye lens and form exposure light from the light amplification of each semiconductor light-emitting elements generation; And in the light path from a plurality of amplifying lenses to fly's-eye lens, be provided with concave mirror, this concave mirror has paraboloidal minute surface, make the light reflection of amplifying by a plurality of amplifying lenses expose to fly's-eye lens, be flat condition and constitute basal substrate, and a plurality of semiconductor light-emitting elements are carried at grade, so that from the distance at center to the center of concave mirror of carrying the semiconductor light-emitting elements group on basal substrate, reach the focal length that equals concave mirror from the center of concave mirror to the distance at the center of the plane of incidence of fly's-eye lens, and the center of the semiconductor light-emitting elements group of lift-launch on basal substrate center and the plane of incidence of fly's-eye lens clips the symmetrical manner by the normal of the focus of concave mirror, dispose basal substrate and fly's-eye lens, so that produce and amplify and at the optical axis of the light of concave mirror reflection by corresponding amplifying lens from each semiconductor light-emitting elements, at the special angle of the shadow surface that does not depart from fly's-eye lens in the interior mode that is incident to fly's-eye lens, dispose a plurality of semiconductor light-emitting elements and a plurality of amplifying lens, make from a plurality of semiconductor light-emitting elements produce and the light that amplifies by a plurality of amplifying lenses in the concave mirror reflection and expose to fly's-eye lens.
Be provided with concave mirror in the light path from a plurality of amplifying lenses to fly's-eye lens, this concave mirror has paraboloidal minute surface, makes the light reflection of amplifying by a plurality of amplifying lenses and exposes to fly's-eye lens.Minute surface at concave mirror is under the paraboloidal situation, if the light that produces from the focus of concave mirror in the minute surface reflection of concave mirror, it is parallel then all to become.In addition, if reflect at the minute surface of concave mirror with the light of the normal parallel ground incident of focus by concave mirror, then all accumulate in the focus place.If with respect to the normal of the focus by concave mirror with equal angular obliquely the light of incident in the minute surface reflection of concave mirror, then accumulate in according to incident angle and the position different a bit, each point is identical with focal length apart from the distance at the center of concave mirror.
Be flat condition and constitute basal substrate, and a plurality of semiconductor light-emitting elements are carried at grade, therefore can be easy to a plurality of semiconductor light-emitting elements with identical setting angle setting at grade.So that from carrying distance at center to the center of concave mirror of the semiconductor light-emitting elements group on the basal substrate, and clipping the normal of the focus by concave mirror from the center of center that the distance at center to the center of the plane of incidence of fly's-eye lens of concave mirror equals the focal length of concave mirror and carries the semiconductor light-emitting elements group on basal substrate and the plane of incidence of fly's-eye lens and symmetrical manner configuration basal substrate and fly's-eye lens, therefore the point of the optical axis of the incident light from each semiconductor light-emitting elements to concave mirror gathering is positioned at the center of the plane of incidence of fly's-eye lens.Thereby, each semiconductor light-emitting elements from the same plane that is arranged on basal substrate with identical setting angle produces and is incident to obliquely with equal angular with respect to the normal of the focus by concave mirror the optical axis of light of concave mirror in the paraboloidal minute surface reflection of concave mirror, and all towards the center of the plane of incidence of fly's-eye lens.And, the incident angle of each optical axis is by the configuration of a plurality of semiconductor light-emitting elements and a plurality of amplifying lenses, and become in the special angle of the shadow surface that does not depart from fly's-eye lens, therefore produce and amplify and in the major part of the light of concave mirror reflection by corresponding amplifying lens from each semiconductor light-emitting elements, at the special angle of the shadow surface that does not depart from fly's-eye lens with the interior fly's-eye lens that is incident to, thereby be used for the formation of exposure light.Thus, when making the light that produces from a plurality of semiconductor light-emitting elements overlap and form the exposure light time at fly's-eye lens, the setting of each semiconductor light-emitting elements becomes easily, but and efficient utilize the light of half and half conductor light-emitting component goodly and form the high exposure light of illumination.
Furthermore, proximity printing device of the present invention is each amplifying lens so that become the mode of the light beam of almost parallel respectively at the light of concave mirror reflection, and the light amplification that will produce from each semiconductor light-emitting elements also exposes to concave mirror.In addition, the exposure light formation method of proximity printing device of the present invention is by each amplifying lens, becomes the mode of the light beam of almost parallel respectively with the light in concave mirror reflection, and the light amplification that will produce from each semiconductor light-emitting elements also exposes to concave mirror.By suitably setting the multiplying power of amplifying lens, can make the light beam that becomes almost parallel at the light of concave mirror reflection, therefore the light of concave mirror reflection roughly all at the special angle of the shadow surface that does not depart from fly's-eye lens with the interior fly's-eye lens that is incident to, thereby the formation of the light that is used for exposing.Thus, but efficient is more preferably utilized the light of each semiconductor light-emitting elements, and forms the higher exposure light of illumination.
Furthermore, proximity printing device of the present invention is that basal substrate is got up by a plurality of smooth substrate in combination and constitutes, and a plurality of amplifying lens at this substrate each and constitute.In addition, the exposure light formation method of proximity printing device of the present invention is a plurality of smooth substrate in combination are got up and to constitute basal substrate, and at this substrate each and constitute a plurality of amplifying lenses.Can make basal substrate be of a size of suitable size according to the optical characteristics of fly's-eye lens and concave mirror, thereby realize necessary semiconductor light-emitting elements group's configuration, and be easy to adjust at each substrate the optical axis of each amplifying lens.
Furthermore, proximity printing device of the present invention is the position on each summit of each semiconductor light-emitting elements a plurality of equilateral triangles of being configured in abutting connection with and seamlessly arranging, the section perpendicular to optical axis of each amplifying lens is regular hexagon, and each amplifying lens adjoins each other and configuration seamlessly.In addition, the exposure light formation method of proximity printing device of the present invention is the position on each summit of a plurality of equilateral triangles that each semiconductor light-emitting elements is configured in abutting connection with and seamlessly arranges, making the section perpendicular to optical axis of each amplifying lens is regular hexagon, and each amplifying lens is adjoined each other and configuration seamlessly.A plurality of semiconductor light-emitting elements and a plurality of amplifying lens high density and configuration equably, thus make the light source integral miniaturization.
The manufacture method of display panel substrate of the present invention is to use described arbitrary proximity printing device to carry out the exposure of substrate, perhaps will use the formed exposure illumination of exposure light formation method of described arbitrary proximity printing device to be incident upon substrate via mask, and carry out the exposure of substrate.By using the exposure light formation method of described proximity printing device or proximity printing device, can increase the illumination of exposure light and shorten the time shutter, make life-span of light source of exposure light elongated in addition, therefore can improve the throughput rate of display panel substrate.
[effect of invention]
Exposure light formation method according to proximity printing device of the present invention and proximity printing device, when the light that produces from a plurality of semiconductor light-emitting elements is overlapped and the formation exposure light time at fly's-eye lens, the setting of each semiconductor light-emitting elements is become easily, but and efficient utilize the light of half and half conductor light-emitting component goodly and form the high exposure light of illumination.
Furthermore, exposure light formation method according to proximity printing device of the present invention and proximity printing device, by each amplifying lens, become the mode of the light beam of almost parallel respectively with the light in the concave mirror reflection, make the light amplification that produces from each semiconductor light-emitting elements and expose to concave mirror, but efficient is more preferably utilized the light of each semiconductor light-emitting elements and formed the higher exposure light of illumination thus.
Furthermore, exposure light formation method according to proximity printing device of the present invention and proximity printing device, a plurality of smooth substrate in combination are got up and constitute basal substrate, and at this substrate each and constitute a plurality of amplifying lenses, can make basal substrate be of a size of suitable size according to the optical characteristics of fly's-eye lens and concave mirror thus, thereby realize necessary semiconductor light-emitting elements group's configuration, and be easy to adjust at each substrate the optical axis of each amplifying lens.
Furthermore, exposure light formation method according to proximity printing device of the present invention and proximity printing device, the position on each summit of a plurality of equilateral triangles that each semiconductor light-emitting elements is configured in abutting connection with and seamlessly arranges, making the section perpendicular to optical axis of each amplifying lens is regular hexagon, and each amplifying lens is adjoined each other and configuration seamlessly, but high density and dispose a plurality of semiconductor light-emitting elements equably and a plurality of amplifying lens thus, thereby make the light source integral miniaturization.
According to the manufacture method of display panel substrate of the present invention, can increase the illumination of exposure light and shorten the time shutter, and make life-span of light source of exposure light elongated, therefore can improve the throughput rate of display panel substrate.
Description of drawings
Fig. 1 is the figure that the summary of the proximity printing device of expression one embodiment of the present invention constitutes.
Fig. 2 is the figure of light source cell of the proximity printing device of expression one embodiment of the present invention.
Fig. 3 (a)-Fig. 3 (c) is the figure that the configuration to concave mirror, semiconductor light-emitting elements and fly's-eye lens describes.
Fig. 4 is the figure that the action to light source cell describes.
Fig. 5 is to the distance between semiconductor light-emitting elements and the figure that describes to the relation of the distance at the center of the plane of incidence of fly's-eye lens from the center of concave mirror.
Fig. 6 is the figure of an example of expression basal substrate.
Fig. 7 is the figure of an example of expression substrate.
Fig. 8 (a) is the front view of an example of amplifying lens, and Fig. 8 (b) is the side view of this amplifying lens.
Fig. 9 is the front view of basal substrate and amplifying lens.
Figure 10 is the process flow diagram of an example of manufacturing step of the TFT substrate of expression liquid crystal indicator.
Figure 11 is the process flow diagram of an example of manufacturing step of the colored filter substrate of expression liquid crystal indicator.
Figure 12 is the figure that the action to fly's-eye lens describes.
[explanation of symbol]
1,41a substrate 2 masks
3 pedestals, 4 X guide rails
5 X platforms, 6 Y guide rails
7 Y platforms, 8 theta stages
9 sucker brace tables, 10 suckers
20 mask holders, 30 exposure light irradiation devices
32 collimation lens groups, 33 level crossings
35 illuminance transducers, 40 light source cells
41 basal substrates, 42 semiconductor light-emitting elements
43 amplifying lenses, 45 fly's-eye lenses
46 control circuits, 47 cooling-parts
48 cooling devices, 50 concave mirrors
50 ' convex lens α special angle
The β angle
H is from the distance of semiconductor light-emitting elements group's center to end
The focus of the center F concave mirror of M concave mirror
L is from the distance at center to the center of the plane of incidence of fly's-eye lens of concave mirror
MF normal f focal length
The point that the optical axis of P incident light is assembled
The interval longitudinally of each semiconductor light-emitting elements 42 of d
101～106,201～204 steps
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention, below in conjunction with accompanying drawing and preferred embodiment, embodiment, structure, flow process, feature and the effect thereof of the manufacture method of the proximity printing device that foundation the present invention is proposed, the exposure light method of formationing, display panel substrate, describe in detail as after.
Fig. 1 is the figure that the summary of the proximity printing device of expression one embodiment of the present invention constitutes.The proximity printing device comprises: pedestal 3, X guide rail (guide) 4, X platform (stage) 5, Y guide rail 6, Y platform 7, theta stage 8, sucker (chuck) brace table 9, sucker 10, mask holder (mask holder) 20 and exposure light irradiation device 30.The proximity printing device also possesses except these constitute: with substrate 1 move into to sucker 10, in addition with substrate 1 from substrate transferring robot (robot) that sucker 10 is taken out of, carry out the temperature control unit (unit) of the temperature treatment in the device etc.
In addition, below XY direction in the illustrated embodiment only be illustration, also directions X and Y-direction can be changed.
In Fig. 1, sucker 10 is positioned at the exposure position that exposes of substrate 1.Be provided with the mask holder 20 that keeps mask 2 in the sky of exposure position.Mask holder 20 vacuum suction and keep the periphery of mask 2.Dispose in the sky that remains on the mask 2 on the mask holder 20: exposure light irradiation device 30.In when exposure, expose to substrate 1 from the exposure light transmission mask 2 of exposure light irradiation device 30, the pattern transfer of mask 2 is to the surface of substrate 1 thus, and forms pattern at substrate 1.
By X platform 5 to the movement of directions X and Y platform 7 to the movement of Y-direction, make sucker 10 mobile between load/unload position and exposure position.In load/unload position, by the movement of X platform 5 to the movement of directions X, Y platform 7 to Y-direction, and theta stage 8 to the rotation of θ direction, and carry the prealignment (pre-alignment) of the substrate 1 on sucker 10.At exposure position, by the movement of X platform 5 to the movement of directions X and Y platform 7 to Y-direction, and the substrate 1 that carries on sucker 10 moves (step motion) to the stepping of XY direction.In addition, by not shown Z-leaning device (Z-tilt mechanism), make mask holder 20 mobile and inclination to Z direction (the graphic above-below direction of Fig. 1), carry out mask 2 thus and aim at the gap (gap) of substrate 1.Then, by the movement of X platform 5 to the movement of directions X, Y platform 7 to Y-direction, and theta stage 8 to the rotation of θ direction, and carry out the aligning (alignment) of substrate 1.
In addition, in the present embodiment, move and tilt to the Z direction by making mask holder 20, and carry out the gap alignment of mask 2 and substrate 1, but also can the Z-leaning device be set at sucker brace table 9, make sucker 10 move and tilt to the Z direction, carry out the gap alignment of mask 2 and substrate 1 thus.
Exposure light irradiation device 30 comprises: collimation lens group (collimation lens group) 32, level crossing (plane mirror) 33, illuminance transducer (illumination sensor) 35, and light source cell (light source unit) 40.Following light source cell 40 produces exposure light when carrying out the exposure of substrate 1, do not produce exposure light when not carrying out the exposure of substrate 1.The exposure light transmission collimation lens group 32 who produces from light source cell 40 and become parallel beam is in level crossing 33 reflections and expose to mask 2.By exposing to the exposure light of mask 2, the pattern transfer of mask 2 is to substrate 1 and carry out the exposure of substrate 1.
Near the rear side of level crossing 33, dispose illuminance transducer 35.Be provided with the little opening that passes through of a part that can make exposure light at level crossing 33.Illuminance transducer 35 receives the illumination of measuring exposure light by the light of the opening of level crossing 33.The measurement result of illuminance transducer 35 inputs in the light source cell 40.
Fig. 2 is the figure of light source cell of the proximity printing device of expression one embodiment of the present invention.Light source cell 40 comprises: basal substrate 41, semiconductor light-emitting elements 42, amplifying lens 43, fly's-eye lens 45, control circuit (control circuit) 46, cooling-part 47, cooling device (coolant device) 48, and concave mirror (concave mirror) 50.Be equipped with a plurality of semiconductor light-emitting elements 42 at basal substrate 41.Basal substrate 41 is that the control by control circuit 46 drives each semiconductor light-emitting elements 42.Each semiconductor light-emitting elements 42 comprises light emitting diode or laser diode etc., produces the light that forms exposure light.Control circuit 46 is according to the measurement result of illuminance transducer 35, and controls the driving of each semiconductor light-emitting elements 42.
In addition, in Fig. 2, expression has 9 semiconductor light-emitting elements 42, but in the light source cell of reality, can use hundreds of～semiconductor light-emitting elements about thousands of.
At the back side of basal substrate 41 cooling-part 47 is installed.Cooling-part 47 has the cooling water path for flow of cooling water in inside, by being supplied to the chilled water of cooling water path from cooling device 48 and each semiconductor light-emitting elements 42 being cooled off.In addition, cooling-part 47 and cooling device 48 are not limited to this, also can form the air-cooled type (air-cooling) that comprises heat sink and cooling fan.
Be provided with amplifying lens 43 accordingly with each semiconductor light-emitting elements 42 that carries on basal substrate 41, each amplifying lens 43 can be with the light amplification that produces from each semiconductor light-emitting elements 42.From a plurality of amplifying lenses 43 to the light path of fly's-eye lens 45, be provided with the concave mirror 50 with paraboloidal minute surface, concave mirror 50 makes the light reflection of amplifying by a plurality of amplifying lenses 43 expose to fly's-eye lens 45.Fly's-eye lens 45 makes by a plurality of amplifying lenses 43 amplifications and at the light that concave mirror reflects and overlaps, and forms the exposure light of Illumination Distribution homogeneous.At this moment, depart from the shadow surface of fly's-eye lens 45 with the incident angle greater than certain angle alpha from the light that concave mirror 50 is incident to fly's-eye lens 45, and the formation of the light that is not used to expose.
Fig. 3 (a)-Fig. 3 (c) is the figure that the configuration to concave mirror, semiconductor light-emitting elements and fly's-eye lens describes.In Fig. 3 (a), the minute surface of concave mirror 50 is parabolic, and if the therefore light that produces from the focal point F of concave mirror 50 is in the minute surface reflection of concave mirror 50 then all become parallel.In addition, and if the light of incident parallel with the normal MF of focal point F by concave mirror 50 is in the minute surface reflection of concave mirror 50 then all accumulate in the focal point F place.In Fig. 3 (b), with respect to the normal MF of the focal point F by concave mirror 50 with the equal angular light of incident obliquely, if the minute surface reflection at concave mirror 50 then accumulates in according to incident angle and 1 different P of position, P is identical with focal distance f apart from the distance of the center M of concave mirror 50 for point.Thereby parallel incident light in the paraboloidal minute surface reflection of concave mirror 50 and the point of assembling is: be arranged in shown in Fig. 3 (b) dotted line on the circumference of the center of concave mirror 50 M radius f.
In the present invention, so that from the center of carrying the semiconductor light-emitting elements group on basal substrate 41 to the distance of the center M of concave mirror 50, and equal the mode of the focal distance f of concave mirror 50 from the center M of concave mirror 50 to the distance at the center of the plane of incidence of fly's-eye lens 45, and configuration basal substrate 41 and fly's-eye lens 45.Thereby, shown in Fig. 3 (c), carry center the semiconductor light-emitting elements group on the basal substrate 41, with the center of the plane of incidence of fly's-eye lens 45 be: be positioned at shown in the dotted line on the circumference of the center of concave mirror 50 M radius f.Furthermore, in the present invention, so that the center of the center of carrying the semiconductor light-emitting elements group on basal substrate 41 and the plane of incidence of fly's-eye lens 45 clips the normal MF of the focal point F by concave mirror 50 and symmetrical manner, and dispose basal substrate 41 and fly's-eye lens 45.If dispose basal substrate 41 and fly's-eye lens 45 in this way, then shown in Fig. 3 (c), the some P that the optical axis from each semiconductor light-emitting elements 42 to the incident light of concave mirror 50 is assembled is: the center that is positioned at the plane of incidence of fly's-eye lens 45.
Fig. 4 is the figure that the action to light source cell describes.The point P that optical axis from from each semiconductor light-emitting elements 42 to the incident light of concave mirror 50 is assembled is: the center that is positioned at the plane of incidence of fly's-eye lens 45, therefore, as shown in Figure 4, each semiconductor light-emitting elements 42 from the same plane that is arranged on basal substrate 41 with identical setting angle produces and is incident to the optical axis of the light of concave mirror 50 with respect to the normal MF of the focal point F by concave mirror 50 obliquely with equal angular, in the paraboloidal minute surface reflection of concave mirror 50 and all towards the center of the plane of incidence of fly's-eye lens 45.Thereby, in the present invention, so that produce and amplify and at the optical axis of the light of concave mirror 50 reflections by corresponding amplifying lens 43 from each semiconductor light-emitting elements 42, in the certain angle alpha of the shadow surface that does not depart from fly's-eye lens 45 mode with the center of the interior plane of incidence that is incident to fly's-eye lens 45, and dispose a plurality of semiconductor light-emitting elements 42 and a plurality of amplifying lens 43.
At this moment, the required necessary condition of configuration of a plurality of semiconductor light-emitting elements 42 and a plurality of amplifying lens 43 has 2, and wherein one are: the optical axis of each semiconductor light-emitting elements 42 is consistent with the optical axis of corresponding amplifying lens 43.And, another person is: in Fig. 4, the certain angle alpha that does not depart from the shadow surface of fly's-eye lens 45 with respect to the incident light of fly's-eye lens 45, distance L (equaling in the present invention, the focal distance f of concave mirror 50) from the center M of concave mirror 50 to the center of the plane of incidence of fly's-eye lens 45 satisfies following relation with distance from semiconductor light-emitting elements group's center to end:
L＝h/tanα。
Fig. 5 is to the distance between semiconductor light-emitting elements and the figure that describes to the relation of the distance at the center of the plane of incidence of fly's-eye lens from the center of concave mirror.Effect as for concave mirror 50, replaceablely consider for convex lens, therefore can be regarded as: in Fig. 5, if with the concave mirror 50 shown in the dotted line replace with the convex lens 50 of identical multiplying power ', then when L and h satisfy following formula, produce, and amplify and at the optical axis of the light of concave mirror 50 reflections by corresponding amplifying lens 43 from each semiconductor light-emitting elements 42, in the certain angle alpha of the shadow surface that does not depart from fly's-eye lens 45 with the interior fly's-eye lens 45 that is incident to.
In addition, in following formula, α is the value of stipulating according to the optical characteristics of fly's-eye lens 45, the difference according to each kind of employed fly's-eye lens.In addition, in the present invention, L equals the focal distance f of concave mirror 50, and is the value of stipulating according to the optical characteristics of concave mirror 50.Thereby, in the present invention, according to the optical characteristics of employed fly's-eye lens, satisfying the mode of following formula, and determine: the value of the focal distance f of concave mirror 50 and semiconductor light-emitting elements group's end and the value apart from 2h between the end.From the relation of following formula as can be known: make the light source integral miniaturization and shorten from the distance h of semiconductor light-emitting elements group's center to end, more can shorten the distance L from the center M of concave mirror 50 to the center of the plane of incidence of fly's-eye lens 45, thereby make light source cell 40 miniaturizations.
In Fig. 4, the incident angle of each optical axis of 45 from concave mirror 50 to fly's-eye lens, a plurality of semiconductor light-emitting elements 42 by satisfying described 2 necessary conditions and the configuration of a plurality of amplifying lens 43, and become in the certain angle alpha of the shadow surface that does not depart from fly's-eye lens 45.Therefore, in Fig. 2, produce and amplify and at most of light of concave mirror 50 reflections by corresponding amplifying lens 43 from each semiconductor light-emitting elements 42, in the certain angle alpha of the shadow surface that does not depart from fly's-eye lens 45 with the interior fly's-eye lens 45 that is incident to, thereby be used for the formation of exposure light.Thus, when the light that produces from a plurality of semiconductor light-emitting elements 42 is overlapped and the formation exposure light time at fly's-eye lens 45, the setting of each semiconductor light-emitting elements 42 becomes easily, but and efficient utilize the light of half and half conductor light-emitting component 42 goodly, and form the high exposure light of illumination.
Furthermore, in present embodiment, in Fig. 2, each amplifying lens 43 is so that become the mode of the light beam of almost parallel respectively at the light of concave mirror 50 reflection, and the light amplification that will produce from each semiconductor light-emitting elements 42 also exposes to concave mirror 50.By suitably setting the multiplying power of amplifying lens 43, make the light beam that becomes almost parallel at the light of concave mirror 50 reflections, therefore the light of concave mirror 50 reflections roughly all at the special angle of the shadow surface that does not depart from fly's-eye lens 45 with the interior fly's-eye lens 45 that is incident to, thereby the formation of the light that is used for exposing.Thus, but efficient more preferably utilizes the light of each semiconductor light-emitting elements 42 to form the higher exposure light of illumination.
Fig. 6 is the figure of an example of expression basal substrate.In this example, basal substrate 41 is a plurality of smooth substrate 41a are combined and to constitute.In addition, in Fig. 6, expression has 9 plate base 41a, but actual basal substrate 41 is tens of～hundreds of plate base 41a are combined and to constitute.
If a plurality of smooth substrate 41a are combined and constitute basal substrate 41, then can be according to the optical characteristics of fly's-eye lens 45 and concave mirror 50, and make basal substrate 41 be of a size of suitable size, thereby realize the semiconductor light-emitting elements group's of described necessity configuration.That is the value from the distance h of semiconductor light-emitting elements group's center to end that, can realize that optical characteristics according to fly's-eye lens 45 and concave mirror 50 determines.
Fig. 7 is the figure of an example of expression substrate.In this example, each substrate 41a forms on a direction and has: chimeric concavo-convex shape as the assembly sheet (piece) of jigsaw puzzle (jigsaw puzzle).Wherein, under installment state, need not each substrate 41a and seamlessly contact, also can make the suitable gap that has between each substrate 41a about several millimeters (mm).Lift-launch each semiconductor light-emitting elements 42 on each substrate 41a is: be configured in the adjacency shown in the dotted line and the position on each summit of a plurality of equilateral triangles of seamlessly arranging.If the interval longitudinally of each semiconductor light-emitting elements 42 is made as d, then horizontal being spaced apart of each semiconductor light-emitting elements 42:
In addition, in example shown in Figure 7, be equipped with 9 semiconductor light-emitting elements 42 at 1 plate base 41a, but the present invention is not limited to this, also can be at the semiconductor light-emitting elements 42 of 1 plate base 41a lift-launch below 8 or more than 10.
Fig. 8 (a) is the front view of an example of amplifying lens, and Fig. 8 (b) is the side view of this amplifying lens.In this example, a plurality of amplifying lenses 43 be with each the substrate 41a that constitutes basal substrate 41 accordingly, constitute at each substrate 41a.A plurality of smooth substrate 41a combined and constitute basal substrate 41, and at this substrate 41a each and constitute a plurality of amplifying lenses 43, therefore can be easy to adjust at each substrate 41a the optical axis of each amplifying lens 43.
In Fig. 8 (a), the section perpendicular to optical axis of each amplifying lens 43 is regular hexagon, and each amplifying lens 43 adjoins each other and configuration seamlessly.Fig. 9 is the front view of basal substrate and amplifying lens.The position on each summit of a plurality of equilateral triangles that each semiconductor light-emitting elements 42 is configured in abutting connection with and seamlessly arranges, making the section perpendicular to optical axis of each amplifying lens 43 is regular hexagon, and each amplifying lens 43 is adjoined each other and configuration seamlessly, therefore a plurality of semiconductor light-emitting elements 42 and a plurality of amplifying lens 43 high density and configuration equably, thus make the light source integral miniaturization.
In addition, when the position on each summit of a plurality of equilateral triangles that each semiconductor light-emitting elements 42 are configured in abutting connection with and seamlessly arrange, if as the example as shown in Figure 7, make each substrate 41a on a direction, having concavo-convex shape chimeric as the assembly sheet of jigsaw puzzle, and as shown in Figure 6, make each substrate 41a oppositely combination across line by line, then with staggered line by line in the identical position that makes each substrate 41a towards ground combination of each row of each substrate 41a to compare, can dwindle the longitudinal size of basal substrate 41 integral body.
According to embodiment discussed above, when the light that produces from a plurality of semiconductor light-emitting elements 42 is overlapped and the formation exposure light time at fly's-eye lens 45, the setting of each semiconductor light-emitting elements 42 becomes easily, but and efficient utilize the light of half and half conductor light-emitting component 42 goodly and form the high exposure light of illumination.
Furthermore, by each amplifying lens 43, become the mode of the light beam of almost parallel respectively with the light in concave mirror 50 reflections, make the light amplification that produces from each semiconductor light-emitting elements 42 and expose to concave mirror 50, but efficient is more preferably utilized the light of each semiconductor light-emitting elements 42 thus, thereby forms the higher exposure light of illumination.
Furthermore, a plurality of smooth substrate 41a are combined and constitute basal substrate 41, and at this substrate 41a each and constitute a plurality of amplifying lenses 43, thus can be according to the optical characteristics of fly's-eye lens 45 and concave mirror 50, and make basal substrate 41 be of a size of suitable size, thereby realize necessary semiconductor light-emitting elements group's configuration, and can be easy to adjust at each substrate 41a the optical axis of each amplifying lens 43.
Furthermore, the position on each summit of a plurality of equilateral triangles that each semiconductor light-emitting elements 42 is configured in abutting connection with and seamlessly arranges, making the section perpendicular to optical axis of each amplifying lens 43 is regular hexagon, and each amplifying lens 43 is adjoined each other and configuration seamlessly, a plurality of semiconductor light-emitting elements 42 and a plurality of amplifying lens 43 high density and configuration equably can be made thus, thereby the light source integral miniaturization can be made.
Use proximity printing device of the present invention to expose or will use the formed exposure illumination of exposure light formation method of proximity printing device of the present invention to be incident upon substrate via mask, and carry out the exposure of substrate, increase the illumination of exposure light thus and shorten the time shutter, and make life-span of light source of exposure light elongated, therefore can improve the throughput rate of display panel substrate.
For example, Figure 10 is the process flow diagram of an example of manufacturing step of the TFT substrate of expression liquid crystal indicator.Form in the step (step 101) at film, by sputtering method (spatter) or plasma activated chemical vapour deposition (CVD, Chemical Vapor Deposition) method etc. forms as liquid crystal drive with films such as the electric conductor film of transparency electrode or insulator films at substrate.In resist (resist) application step (step 102), by coating photosensitive resin material (photoresists such as cylinder rubbing methods (roll coating), photoresit), form the photoresistance film in formed film in film formation step (step 101).In step of exposure (step 103), use proximity printing device or projection aligner etc., with the pattern transfer of mask to the photoresistance film.In development step (step 104), by spray (shower development) method etc. of developing developer solution (imaging agent) is supplied on the photoresistance film, and except the not part of removing photoresistance film.In etching (etching) step (step 105), will form the part of in the formed film, not covered by the photoresistance film in the step (step 101) at film by Wet-type etching (wet etching) and remove.In strip step (step 106), will finish the photoresistance film of the effect of performance mask in the etching step (step 105) by stripper and peel off.Before or after these steps, can implement the washing/drying step of substrate as required.Repeat these steps for several times and on substrate, form tft array.
In addition, Figure 11 is the process flow diagram of an example of manufacturing step of the colored filter substrate of expression liquid crystal indicator.Form in the step (step 201) at black matrix (black matrix), by resist-coating, exposure, development, etching, processing such as peel off, and form black matrix at substrate.Form in the step (step 202) at colored pattern, form colored pattern by decoration method, pigment dispersion method, print process, electrochemical plating etc. at substrate.At red (R, Red), green (G, Green), blue (B, colored pattern Blue) and repeat this step.Form in the step (step 203) at diaphragm, form diaphragm at colored pattern, form in the step (step 204) in ELD, form ELD at diaphragm.Before these steps, midway or afterwards, can implement the washing/drying step of substrate as required.
In the manufacturing step of TFT substrate shown in Figure 10, can in step of exposure (step 103), be suitable for the exposure light formation method of proximity printing device of the present invention or proximity printing device, and in the manufacturing step of colored filter substrate shown in Figure 11, can in the exposure-processed of black matrix formation step (step 201) and colored pattern formation step (step 202), be suitable for the exposure light formation method of proximity printing device of the present invention or proximity printing device.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the method that can utilize above-mentioned announcement and technology contents are made a little change or be modified to the equivalent embodiment of equivalent variations, in every case be the content that does not break away from technical solution of the present invention, any simple modification that foundation technical spirit of the present invention is done above embodiment, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (12)
1. proximity printing device comprises:
A plurality of semiconductor light-emitting elements produce the light that forms exposure light;
Basal substrate carries described a plurality of semiconductor light-emitting elements;
A plurality of amplifying lenses, corresponding with each semiconductor light-emitting elements and arrange, the light amplification that will produce from each semiconductor light-emitting elements; And
Fly's-eye lens; And
The light that amplifies by described a plurality of amplifying lenses is overlapped at described fly's-eye lens form exposure light;
Described proximity printing device is characterised in that and comprises:
Concave mirror is arranged on from described a plurality of amplifying lenses to the light path of described fly's-eye lens, and described concave mirror has paraboloidal minute surface, makes the light reflection of amplifying by described a plurality of amplifying lenses and exposes to described fly's-eye lens; And
Described basal substrate constitutes flat condition, described a plurality of semiconductor light-emitting elements carried at grade,
Described basal substrate and described fly's-eye lens are: so that from carrying distance at semiconductor light-emitting elements Qun De center to the center of described concave mirror of described basal substrate, and from the center of described concave mirror, equaling the focal length of described concave mirror to the distance at the center of the plane of incidence of described fly's-eye lens, and the center of the semiconductor light-emitting elements group's of carrying at described basal substrate center and the plane of incidence of described fly's-eye lens clips the mode symmetrical by the normal of the focus of described concave mirror and configures
Described a plurality of semiconductor light-emitting elements and described a plurality of amplifying lens are: so that produce and amplify and at the optical axis of the light of described concave mirror reflection by corresponding amplifying lens from each semiconductor light-emitting elements, in the special angle of the shadow surface that does not depart from described fly's-eye lens, be incident to the mode of described fly's-eye lens and dispose.
2. proximity printing device according to claim 1 is characterized in that:
Each amplifying lens is so that become the mode of parallel light beam respectively at the light of described concave mirror reflection, and the light amplification that will produce from each semiconductor light-emitting elements also exposes to described concave mirror.
3. proximity printing device according to claim 1 and 2 is characterized in that:
Described basal substrate is a plurality of smooth substrate in combination are got up and to constitute, and described a plurality of amplifying lens be at this substrate each and constitute.
4. proximity printing device according to claim 1 and 2 is characterized in that:
The position on each summit of a plurality of equilateral triangles that each semiconductor light-emitting elements is configured in abutting connection with and seamlessly arranges,
The section perpendicular to optical axis of each amplifying lens is regular hexagon, and each amplifying lens adjoins each other and configuration seamlessly.
5. proximity printing device according to claim 3 is characterized in that:
The position on each summit of a plurality of equilateral triangles that each semiconductor light-emitting elements is configured in abutting connection with and seamlessly arranges,
The section perpendicular to optical axis of each amplifying lens is regular hexagon, and each amplifying lens adjoins each other and configuration seamlessly.
6. the exposure light formation method of a proximity printing device carries a plurality of semiconductor light-emitting elements at basal substrate, produces the light that forms exposure light from each semiconductor light-emitting elements,
Corresponding with each semiconductor light-emitting elements and a plurality of amplifying lenses are set, as will to produce from each semiconductor light-emitting elements by the amplifying lens of correspondence light amplification,
The light that amplifies by a plurality of amplifying lenses is overlapped at fly's-eye lens form exposure light;
The exposure light formation method of described proximity printing device is characterised in that:
Be provided with concave mirror in the light path from a plurality of amplifying lenses to fly's-eye lens, described concave mirror has paraboloidal minute surface, and make the light reflection of amplifying by a plurality of amplifying lenses and expose to fly's-eye lens,
Be flat condition and constitute described basal substrate, and a plurality of semiconductor light-emitting elements are carried at grade,
So that from carrying distance at semiconductor light-emitting elements Qun De center to the center of described concave mirror of described basal substrate, and from the center of described concave mirror, equaling the focal length of concave mirror to the distance at the center of the plane of incidence of described fly's-eye lens, and the center of the semiconductor light-emitting elements group's of carrying at described basal substrate center and the plane of incidence of described fly's-eye lens clips the mode symmetrical by the normal of the focus of described concave mirror, configure described basal substrate and described fly's-eye lens
So that produce and amplify and at the optical axis of the light of described concave mirror reflection by corresponding amplifying lens from each semiconductor light-emitting elements, at the special angle of the shadow surface that does not depart from described fly's-eye lens in the interior mode that is incident to fly's-eye lens, dispose described a plurality of semiconductor light-emitting elements and described a plurality of amplifying lens
Make the light that produces and amplify by described a plurality of amplifying lenses from described a plurality of semiconductor light-emitting elements, in described concave mirror reflection and expose to described fly's-eye lens.
7. the exposure light formation method of proximity printing device according to claim 6 is characterized in that:
Making the mode that becomes parallel light beam at the light of described concave mirror reflection respectively by each amplifying lens, the light amplification that will produce from each semiconductor light-emitting elements also exposes to described concave mirror.
8. according to the exposure light formation method of claim 6 or 7 described proximity printing devices, it is characterized in that:
A plurality of smooth substrate in combination got up and constitute described basal substrate, and at this substrate each and constitute described a plurality of amplifying lens.
9. according to the exposure light formation method of claim 6 or 7 described proximity printing devices, it is characterized in that:
The position on each summit of a plurality of equilateral triangles that each semiconductor light-emitting elements is configured in abutting connection with and seamlessly arranges,
Making the section perpendicular to optical axis of each amplifying lens is regular hexagon, and each amplifying lens is adjoined each other and configuration seamlessly.
10. the exposure light formation method of proximity printing device according to claim 8 is characterized in that:
The position on each summit of a plurality of equilateral triangles that each semiconductor light-emitting elements is configured in abutting connection with and seamlessly arranges,
Making the section perpendicular to optical axis of each amplifying lens is regular hexagon, and each amplifying lens is adjoined each other and configuration seamlessly.
11. the manufacture method of a display panel substrate is characterized in that:
Use is according to each described proximity printing device in the claim 1 to 5, and carries out the exposure of substrate.
12. the manufacture method of a display panel substrate is characterized in that:
The formed exposure light of exposure light formation method with using according to each described proximity printing device in the claim 6 to 10 exposes to substrate, and carries out the exposure of described substrate via mask.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012033309A JP2013171088A (en) | 2012-02-17 | 2012-02-17 | Proximity exposure apparatus, method for forming exposure light of proximity exposure apparatus, and method for manufacturing display panel substrate |
| JP2012-033309 | 2012-02-17 |
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| CN103257530A true CN103257530A (en) | 2013-08-21 |
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| Country | Link |
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| JP (1) | JP2013171088A (en) |
| KR (1) | KR20130095213A (en) |
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| JP5905359B2 (en) * | 2012-07-23 | 2016-04-20 | 株式会社荏原製作所 | Pressure control apparatus and polishing apparatus provided with the pressure control apparatus |
| JP6282847B2 (en) * | 2013-11-19 | 2018-02-21 | Hoya株式会社 | Photomask and method of manufacturing substrate using the photomask |
| JP6085572B2 (en) * | 2014-01-09 | 2017-02-22 | 株式会社荏原製作所 | Pressure control apparatus and polishing apparatus provided with the pressure control apparatus |
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- 2012-02-17 JP JP2012033309A patent/JP2013171088A/en active Pending
-
2013
- 2013-02-06 KR KR1020130013615A patent/KR20130095213A/en not_active Application Discontinuation
- 2013-02-07 TW TW102104942A patent/TW201335721A/en unknown
- 2013-02-07 CN CN2013100653751A patent/CN103257530A/en active Pending
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| JPH07183189A (en) * | 1993-12-22 | 1995-07-21 | Nikon Corp | Illuminating optical system |
| US5677939A (en) * | 1994-02-23 | 1997-10-14 | Nikon Corporation | Illuminating apparatus |
| CN101872132A (en) * | 2009-04-21 | 2010-10-27 | 株式会社日立高科技 | Exposing device, exposing light beam illuminating method and method for manufacturing display panel substrate |
| CN101943867A (en) * | 2009-07-07 | 2011-01-12 | 株式会社日立高科技 | Proximity exposure device, its exposing light beam formation method and display panel substrate manufacture method |
| JP2011070959A (en) * | 2009-09-25 | 2011-04-07 | Panasonic Electric Works Co Ltd | Luminaire |
| CN102566298A (en) * | 2010-10-08 | 2012-07-11 | 优志旺电机株式会社 | Light irradiation device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104423176A (en) * | 2013-08-30 | 2015-03-18 | 深南电路有限公司 | Optical system and exposure machine |
| CN106406033A (en) * | 2015-07-30 | 2017-02-15 | 赵南稙 | Uv led light source module unit for exposure photolithography process and exposure photolithography apparatus used the same |
| CN106406033B (en) * | 2015-07-30 | 2019-05-03 | 赵南稙 | For the light source module unit of exposure and the exposure device including the light source module unit |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20130095213A (en) | 2013-08-27 |
| JP2013171088A (en) | 2013-09-02 |
| TW201335721A (en) | 2013-09-01 |
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Application publication date: 20130821 |